‭ECE 404 REVIEWER‬ ➔
‭ ‬ ‭The Choke-Input Filter‬
‭Chapter 0: Introduction‬
‭➔‬ ‭The Three Kinds of Formulas‬
‭➔‬ ‭Approximations‬
‭➔‬ ‭Voltage Sources‬
‭➔‬ ‭Current Sources‬
‭➔‬ ‭Thevenin's Theorem‬
‭➔‬ ‭Norton's Theorem‬
‭➔‬ ‭Troubleshooting‬
‭Chapter 1: Semiconductors‬
‭➔‬ ‭Conductors‬
‭➔‬ ‭Semiconductors‬
‭➔‬ ‭Silicon Crystals‬
‭➔‬ ‭Intrinsic Semiconductors‬
‭➔‬ ‭Two Types of Flow‬
‭➔‬ ‭Doping a Semiconductor‬
‭➔‬ ‭Two Types of Extrinsic‬
‭Semiconductors‬
‭➔‬ ‭The Unbiased Diode‬
‭➔‬ ‭Forward Bias‬
‭➔‬ ‭Reverse Bias‬
‭➔‬ ‭Breakdown‬
‭➔‬ ‭Energy Levels‬
‭➔‬ ‭Barrier Potential and‬
‭Temperature‬
‭➔‬ ‭Reverse-Biased Diode‬
‭Chapter 2: Diode Theory‬
‭➔‬ ‭Basic Ideas‬
‭➔‬ ‭The Ideal Diode‬
‭➔‬ ‭The Second Approximation‬
‭➔‬ ‭The Third Approximation‬
‭➔‬ ‭Troubleshooting‬
‭➔‬ ‭Reading a Data Sheet‬
‭➔‬ ‭How to Calculate Bulk‬
‭Resistance‬
‭➔‬ ‭DC Resistance of a Diode‬
‭➔‬ ‭Load Lines‬
‭➔‬ ‭Surface-Mount Diodes‬
‭➔‬ ‭Introduction to Electronic‬
‭Systems‬
‭Chapter 3: Diode Circuits‬
‭➔‬ ‭The Half-Wave Rectifier‬
‭➔‬ ‭The Transformer‬
‭➔‬ ‭The Full-Wave Rectifier‬
‭➔‬ ‭The Bridge Rectifier‬
‭➔‬ ‭The Capacitor-Input Filter‬
‭➔‬ ‭Peak Inverse Voltage and Surge‬
‭Current‬
‭➔‬ ‭Other Power-Supply Topics‬
‭➔‬ ‭Troubleshooting‬
‭➔‬ ‭Clippers and Limiters‬
‭➔‬ ‭Clampers‬
‭➔‬ ‭Voltage Multipliers‬
‭Chapter 4: Special-purpose Diodes‬
‭➔‬ ‭The Zener Diode‬
‭➔‬ ‭The Loaded Zener Regulator‬
‭➔‬ ‭Second Approximation of a Zener‬
‭Diode‬
‭➔‬ ‭Zener Drop-Out Point‬
‭➔‬ ‭Reading a Data Sheet‬
‭➔‬ ‭Troubleshooting‬
‭➔‬ ‭Load Lines‬
‭➔‬ ‭Light-Emitting Diodes (LEDs)‬
‭➔‬ ‭Other Optoelectronic Devices‬
‭➔‬ ‭The Schottky Diode‬
‭➔‬ ‭The Varactor‬
‭➔‬ ‭Other Diodes‬
‭Chapter 5: BJT Fundamentals‬
‭➔‬ ‭The Unbiased Transistor‬
‭➔‬ ‭The Biased Transistor‬
‭➔‬ ‭Transistor Currents‬
‭➔‬ ‭The CE Connection‬
‭➔‬ ‭The Base Curve‬
‭➔‬ ‭Collector Curves‬
‭➔‬ ‭Transistor Approximations‬
‭➔‬ ‭Reading Data Sheets‬
‭➔‬ ‭Surface-Mount Transistors‬
‭➔‬ ‭Variations in Current Gain‬
‭➔‬ ‭The Load Line‬
‭➔‬ ‭The Operating Point‬
‭➔‬ ‭Recognizing Saturation‬
‭➔‬ ‭The Transistor Switch‬
‭➔‬ ‭Troubleshooting‬
‭Chapter 6: BJT Biasing‬
‭➔‬ ‭Emitter Bias‬
‭➔‬ ‭LED Drivers‬
‭➔‬ ‭Troubleshooting Emitter Bias‬
‭Circuits‬
‭➔‬ ‭More Optoelectronic Devices‬
‭➔‬ ‭Voltage-Divider Bias‬
‭➔‬ ‭Accurate VDB Analysis‬
 ➔
‭ ‬ ‭VDB Load Line and Q Point‬
‭➔‬ ‭Two-Supply Emitter Bias‬
‭➔‬ ‭Other Types of Bias‬
‭➔‬ ‭Troubleshooting VDB Circuits‬
‭➔‬ ‭PNP Transistors‬

‭Chapter 7: Basic BJT Amplifiers‬

‭➔‬ ‭Base-Biased Amplifier‬
‭➔‬ ‭Emitter-Biased Amplifier‬
‭➔‬ ‭Small-Signal Operation‬
‭➔‬ ‭AC Beta‬
‭➔‬ ‭AC Resistance of the Emitter‬
‭Diode‬
‭➔‬ ‭Two Transistor Models‬
‭➔‬ ‭Analyzing an Amplifier‬
‭➔‬ ‭AC Quantities on the Data Sheet‬
‭➔‬ ‭Voltage Gain‬
‭➔‬ ‭The Loading Effect of Input‬
‭Impedance‬
‭➔‬ ‭Swamped Amplifier‬
‭➔‬ ‭Troubleshooting‬
‭CHAPTER 0 - INTRODUCTION‬ ‭ . Half the load resistance‬
b
‭c. Internal resistance of a Norton circuit‬
‭ . An ideal voltage source has‬
1 ‭d. Open-load resistance‬
‭a.‬‭Zero internal resistance‬
‭b. Infinite internal resistance‬ ‭ . To get the Thevenin voltage, you‬
9
‭c. A load-dependent voltage‬ ‭have to‬
‭d. A load-dependent current‬ ‭a. Short the load resistor‬
‭b. Open the load resistor‬
‭ . A real voltage source has‬
2 ‭c. Short the voltage source‬
‭a. Zero internal resistance‬ ‭d. Open the voltage source‬
‭b. Infinite internal resistance‬
‭c. A small internal resistance‬ ‭ 0. To get the Norton current, you have‬
1
‭d. A large internal resistance‬ ‭to‬
‭a. Short the load resistor‬
‭ . If a load resistance is 100 Ω, a stiff‬
3 ‭b. Open the load resistor‬
‭voltage source has a resistance of‬ ‭c. Short the voltage source‬
‭a. Less than 1 Ω‬ ‭d. Open the current source‬
‭b. At least 10 Ω‬
‭c. More than 10 kΩ‬ ‭ 1. The Norton current is sometimes‬
1
‭d. Less than 10 kΩ‬ ‭called the‬
‭a. Shorted-load current‬
‭ . An ideal current source has‬
4 ‭b. Open-load current‬
‭a. Zero internal resistance‬ ‭c. Thevenin current‬
‭b. Infinite internal resistance‬ ‭d. Thevenin voltage‬
‭c. A load-dependent voltage‬
‭d. A load-dependent current‬ ‭ 2. A solder bridge‬
1
‭a. May produce a short‬
‭ . A real current source has‬
5 ‭b. May cause an open‬
‭a. Zero internal resistance‬ ‭c. Is useful in some circuits‬
‭b. Infinite internal resistance‬ ‭d. Always has high resistance‬
‭c. A small internal resistance‬
‭d. A large internal resistance‬ ‭ 3. A cold-solder joint‬
1
‭a. Always has low resistance‬
‭ . If a load resistance is 100 Ω, a stiff‬
6 ‭b. Shows good soldering technique‬
‭current source has a resistance of‬ ‭c. Usually produces an open‬
‭a. Less than 1 Ω‬ ‭d. Will cause a short circuit‬
‭b. Less than 1 Ω‬
‭c. Less than 10 kΩ‬ ‭ 4. An open resistor has‬
1
‭d. More than 10 kΩ‬ ‭a. Infinite current through it‬
‭b. Zero voltage across it‬
‭ . The Thevenin voltage is the same as‬
7 ‭c. Infinite voltage across it‬
‭the‬ ‭d. Zero current through it‬
‭a. Shorted-load voltage‬
‭b. Open-load voltage‬ ‭ 5. A shorted resistor has‬
1
‭c. Ideal source voltage‬ ‭a. Infinite current through it‬
‭d. Norton voltage‬ ‭b. Zero voltage across it‬
‭c. Infinite voltage across it‬
‭ . The Thevenin resistance is equal in‬
8 ‭d. Zero current through it‬
‭value to the‬
‭a. Load resistance‬
‭ 6. An ideal voltage source and an‬
1 ‭ . Ideal current source and series‬
d
‭internal resistance are examples of the‬ ‭resistor‬
‭a. Ideal approximation‬
‭b. Second approximation‬ ‭ 2. One way to short a device is‬
2
‭c. Higher approximation‬ ‭a. With a cold-solder joint‬
‭d. Exact model‬ ‭b. With a solder bridge‬
‭c. By disconnecting it‬
‭ 7. Treating a connecting wire as a‬
1 ‭d. By opening it‬
‭conductor with zero resistance is an‬
‭example of the‬ ‭ 3. Derivations are‬
2
‭a. Ideal approximation‬ ‭a. Discoveries‬
‭b. Second approximation‬ ‭b. Inventions‬
‭c. Higher approximation‬ ‭c. Produced by mathematics‬
‭d. Exact model‬ ‭d. Always called theorems‬

‭ 8. The voltage out of an ideal voltage‬

1
‭source‬
‭a. Is zero‬ ‭CHAPTER 1 - SEMICONDUCTORS‬
‭b. Is constant‬
‭c. Depends on the value of load‬ ‭ . The nucleus of a copper atom‬
1
‭resistance‬ ‭contains how many protons?‬
‭d. Depends on the internal resistance‬ ‭a. 1‬
‭b. 4‬
‭ 9. The current out of an ideal current‬
1 ‭c. 18‬
‭source‬ ‭d. 29‬
‭a. Is zero‬
‭b. Is constant‬ ‭ . The net charge of a neutral copper‬
2
‭c. Depends on the value of load‬ ‭atom is‬
‭resistance‬ ‭a. 0‬
‭d. Depends on the internal resistance‬ ‭b. +1‬
‭c. -1‬
‭ 0. Thevenin’s theorem replaces a‬
2 ‭d. +4‬
‭complicated circuit facing a load with an‬
‭a. Ideal voltage source and parallel‬ ‭ . Assume the valence electron is‬
3
‭resistor‬ ‭removed from a copper atom. The net‬
‭b. Ideal current source and parallel‬ ‭charge of the atom becomes‬
‭resistor‬ ‭a. 0‬
‭c. Ideal voltage source and series‬ ‭b. +1‬
‭resistor‬ ‭c. -1‬
‭d. Ideal current source and series‬ ‭d. +4‬
‭resistor‬
‭ . The valence electron of a copper‬
4
‭ 1. Norton’s theorem replaces a‬
2 ‭atom experiences what kind of attraction‬
‭complicated circuit facing a load with an‬ ‭toward the nucleus?‬
‭a. Ideal voltage source and parallel‬ ‭a. None‬
‭resistor‬ ‭b. Weak‬
‭b. Ideal current source and parallel‬ ‭c. Strong‬
‭resistor‬ ‭d. Impossible to say‬
‭c. Ideal voltage source and series‬
‭resistor‬
‭ . How many valence electrons does a‬
5
‭silicon atom have?‬ ‭ 2. At room temperature, an intrinsic‬
1
‭a. 0‬ ‭silicon crystal acts approximately like‬
‭b. 1‬ ‭a. A battery‬
‭c. 2‬ ‭b. A conductor‬
‭d. 4‬ ‭c. An insulator‬
‭d. A piece of copper wire‬
‭ . Which is the most widely used‬
6
‭semiconductor?‬ ‭ 3. The amount of time between the‬
1
‭a. Copper‬ ‭creation of a hole and its disappearance‬
‭b. Germanium‬ ‭is called‬
‭c. Silicon‬ ‭a. Doping‬
‭d. None of the above‬ ‭b. Lifetime‬
‭c. Recombination‬
‭ . How many protons does the nucleus‬
7 ‭d. Valence‬
‭of a silicon atom contain?‬
‭a. 4‬ ‭ 4. The valence electron of a conductor‬
1
‭b. 14‬ ‭can also be called a‬
‭c. 29‬ ‭a. Bound electron‬
‭d. 32‬ ‭b. Free electron‬
‭c. Nucleus‬
‭ . Silicon atoms combine into an orderly‬
8 ‭d. Proton‬
‭pattern called a‬
‭a. Covalent bond‬ ‭ 5. A conductor has how many types of‬
1
‭b. Crystal‬ ‭flow?‬
‭c. Semiconductor‬ ‭a. 1‬
‭d. Valence orbit‬ ‭b. 2‬
‭c. 3‬
‭ . An intrinsic semiconductor has some‬
9 ‭d. 4‬
‭holes in it at room temperature. What‬
‭causes these holes?‬ ‭ 6. A semiconductor has how many‬
1
‭a. Doping‬ ‭types of flow?‬
‭b. Free electrons‬ ‭a. 1‬
‭c. Thermal energy‬ ‭b. 2‬
‭d. Valence electrons‬ ‭c. 3‬
‭d. 4‬
‭ 0. When an electron is moved to a‬
1
‭higher orbit level, its energy level with‬ ‭ 7. When a voltage is applied to a‬
1
‭respect to the nucleus‬ ‭semiconductor, holes will flow‬
‭a. Increases‬ ‭a. Away from the negative potential‬
‭b. Decreases‬ ‭b. Toward the positive potential‬
‭c. Remains the same‬ ‭c. In the external circuit‬
‭d. Depends on the type of atom‬ ‭d. None of the above‬

‭ 1. The merging of a free electron and a‬

1 ‭ 8. For semiconductor material, its‬
1
‭hole is called‬ ‭valence orbit is saturated when it‬
‭a. Covalent bonding‬ ‭contains‬
‭b. Lifetime‬ ‭a. One electron‬
‭c. Recombination‬ ‭b. Equal (+) and (-) ions‬
‭d. Thermal energy‬ ‭c. Four electrons‬
‭d. Eight electrons‬ ‭d. Positive charges‬

‭ 9. In an intrinsic semiconductor, the‬

1 ‭ 6. Trivalent atoms have how many‬
2
‭number of holes‬ ‭valence electrons?‬
‭a. Equals the number of free electrons‬ ‭a. 1‬
‭b. Is greater than the number of free‬ ‭b. 3‬
‭electrons‬ ‭c. 4‬
‭c. Is less than the number of free‬ ‭d. 5‬
‭electrons‬
‭d. None of the above‬ ‭ 7. An acceptor atom has how many‬
2
‭valence electrons?‬
‭ 0. Absolute zero temperature equals‬
2 ‭a. 1‬
‭a. -273°C‬ ‭b. 3‬
‭b. 0°C‬ ‭c. 4‬
‭c. 25°C‬ ‭d. 5‬
‭d. 50°C‬
‭ 8. If you wanted to produce a p-type‬
2
‭ 1. At absolute zero temperature, an‬
2 ‭semiconductor, which of these would‬
‭intrinsic semiconductor has‬ ‭you use?‬
‭a. A few free electrons‬ ‭a. Acceptor atoms‬
‭b. Many holes‬ ‭b. Donor atoms‬
‭c. Many free electrons‬ ‭c. Pentavalent impurity‬
‭d. No holes or free electrons‬ ‭d. Silicon‬

‭ 2. At room temperature, an intrinsic‬

2 ‭ 9. Electrons are the minority carriers in‬
2
‭semiconductor has‬ ‭which type of semiconductor?‬
‭a. A few free electrons and holes‬ ‭a. Extrinsic‬
‭b. Many holes‬ ‭b. Intrinsic‬
‭c. Many free electrons‬ ‭c. n-type‬
‭d. No holes‬ ‭d. p-type‬

‭ 3. The number of free electrons and‬

2 ‭ 0. How many free electrons does a‬
3
‭holes in an intrinsic semiconductor‬ ‭p-type semiconductor contain?‬
‭decreases when the temperature‬ ‭a. Many‬
‭a. Decreases‬ ‭b. None‬
‭b. Increases‬ ‭c. Only those produced by thermal‬
‭c. Stays the same‬ ‭energy‬
‭d. None of the above‬ ‭d. Same number as holes‬

‭ 4. The flow of valence electrons to the‬

2 ‭ 1. Silver is the best conductor. How‬
3
‭right means that holes are flowing to the‬ ‭many valence electrons do you think it‬
‭a. Left‬ ‭has?‬
‭b. Right‬ ‭a. 1‬
‭c. Either way‬ ‭b. 4‬
‭d. None of the above‬ ‭c. 18‬
‭d. 29‬
‭ 5. Holes act like‬
2
‭a. Atoms‬ ‭ 2. Suppose an intrinsic semiconductor‬
3
‭b. Crystals‬ ‭has 1 billion free electrons at room‬
‭c. Negative charges‬
t‭emperature. If the temperature drops to‬ ‭d. Has many holes‬
‭0°C, how many holes are there?‬
‭a. Fewer than 1 billion‬ ‭ 9. A p-type semiconductor contains‬
3
‭b. 1 billion‬ ‭holes and‬
‭c. More than 1 billion‬ ‭a. Positive ions‬
‭d. Impossible to say‬ ‭b. Negative ions‬
‭c. Pentavalent atoms‬
‭ 3. An external voltage source is‬
3 ‭d. Donor atoms‬
‭applied to a p-type semiconductor. If the‬
‭left end of the crystal is positive, which‬ ‭ 0. Which of the following describes a‬
4
‭way do the majority carriers flow?‬ ‭p-type semiconductor?‬
‭a. Left‬ ‭a. Neutral‬
‭b. Right‬ ‭b. Positively charged‬
‭c. Neither‬ ‭c. Negatively charged‬
‭d. Impossible to say‬ ‭d. Has many free electrons‬

‭ 4. Which of the following doesn’t fit in‬

3 ‭ 1. When compared to a germanium‬
4
‭the group?‬ ‭diode, a silicon diode’s reverse‬
‭a. Conductor‬ ‭saturation current is‬
‭b. Semiconductor‬ ‭a. Equal at high temperatures‬
‭c. Four valence electrons‬ ‭b. Lower‬
‭d. Crystal structure‬ ‭c. Equal at lower temperatures‬
‭d. Higher‬
‭ 5. Which of the following is‬
3
‭approximately equal to room‬ ‭ 2. What causes the depletion layer?‬
4
‭temperature?‬ ‭a. Doping‬
‭a. 0°C‬ ‭b. Recombination‬
‭b. 25°C‬ ‭c. Barrier potential‬
‭c. 50°C‬ ‭d. Ions‬
‭d. 75°C‬
‭ 3. What is the barrier potential of a‬
4
‭ 6. How many electrons are there in the‬
3 ‭silicon diode at room temperature?‬
‭valence orbit of a silicon atom within a‬ ‭a. 0.3 V‬
‭crystal?‬ ‭b. 0.7 V‬
‭a. 1‬ ‭c. 1 V‬
‭b. 4‬ ‭d. 2 mV per degree Celsius‬
‭c. 8‬
‭d. 14‬ ‭ 4. When comparing the energy gap of‬
4
‭germanium and silicon atoms, a silicon‬
‭ 7. Negative ions are atoms that have‬
3 ‭atom’s energy gap is‬
‭a. Gained a proton‬ ‭a. About the same‬
‭b. Lost a proton‬ ‭b. Lower‬
‭c. Gained an electron‬ ‭c. Higher‬
‭d. Lost an electron‬ ‭d. Unpredictable‬

‭ 8. Which of the following describes an‬

3 ‭ 5. In a silicon diode, the reverse‬
4
‭n-type semiconductor?‬ ‭current is usually‬
‭a. Neutral‬ ‭a. Very small‬
‭b. Positively charged‬ ‭b. Very large‬
‭c. Negatively charged‬ ‭c. Zero‬
‭d. In the breakdown region‬ ‭ 2. The energy gap in a silicon atom is‬
5
‭the distance between the valence band‬
‭ 6. While maintaining a constant‬
4 ‭and the‬
‭temperature, a silicon diode has its‬ ‭a. Nucleus‬
‭reverse-bias voltage increased. The‬ ‭b. Conduction band‬
‭diode’s saturation current will‬ ‭c. Atom’s core‬
‭a. Increase‬ ‭d. Positive ions‬
‭b. Decrease‬
‭c. Remain the same‬ ‭ 3. The reverse saturation current‬
5
‭d. Equal its surface-leakage current‬ ‭doubles when the junction temperature‬
‭increases‬
‭ 7. The voltage where avalanche occurs‬
4 ‭a. 1°C‬
‭is called the‬ ‭b. 2°C‬
‭a. Barrier potential‬ ‭c. 4°C‬
‭b. Depletion layer‬ ‭d. 10°C‬
‭c. Knee voltage‬
‭d. Breakdown voltage‬ ‭ 4. The surface-leakage current doubles‬
5
‭when the reverse voltage increases‬
‭ 8. The width of a diode’s depletion‬
4 ‭a. 7%‬
‭layer will decrease when the diode is‬ ‭b. 100%‬
‭a. Forward biased‬ ‭c. 200%‬
‭b. First formed‬ ‭d. 2 mV‬
‭c. Reverse biased‬
‭d. Not conducting‬

‭ 9. When the reverse voltage decreases‬

4 ‭CHAPTER 2 - DIODE THEORY‬
‭from 10 to 5 V, the depletion layer‬
‭a. Becomes smaller‬ ‭ . When the graph of current versus‬
1
‭b. Becomes larger‬ ‭voltage is a straight line, the device is‬
‭c. Is unaffected‬ ‭referred to as‬
‭d. Breaks down‬ ‭a. Active‬
‭b. Linear‬
‭ 0. When a diode is forward biased, the‬
5 ‭c. Nonlinear‬
‭recombination of free electrons and‬ ‭d. Passive‬
‭holes may produce‬
‭a. Heat‬ ‭ . What kind of device is a resistor?‬
2
‭b. Light‬ ‭a. Unilateral‬
‭c. Radiation‬ ‭b. Linear‬
‭d. All of the above‬ ‭c. Nonlinear‬
‭d. Bipolar‬
‭ 1. A reverse voltage of 10 V is across a‬
5
‭diode. What is the voltage across the‬ ‭ . What kind of a device is a diode?‬
3
‭depletion layer?‬ ‭a. Bilateral‬
‭a. 0 V‬ ‭b. Linear‬
‭b. 0.7 V‬ ‭c. Nonlinear‬
‭c. 10 V‬ ‭d. Unipolar‬
‭d. None of the above‬
‭ . How is a nonconducting diode‬
4
‭biased?‬
‭a. Forward‬
‭ . Inverse‬
b ‭ . 0‬
a
‭c. Poorly‬ ‭b. 0.23 Ω‬
‭d. Reverse‬ ‭c. 10 Ω‬
‭d. 1 kΩ‬
‭ . When the diode current is large, the‬
5
‭bias is‬ ‭ 2. If the bulk resistance is zero, the‬
1
‭a. Forward‬ ‭graph above the knee becomes‬
‭b. Inverse‬ ‭a. Horizontal‬
‭c. Poor‬ ‭b. Vertical‬
‭d. Reverse‬ ‭c. Tilted at 45°‬
‭d. None of the above‬
‭ . The knee voltage of a diode is‬
6
‭approximately equal to the‬ ‭ 3. The ideal diode is usually adequate‬
1
‭a. Applied voltage‬ ‭when‬
‭b. Barrier potential‬ ‭a. Troubleshooting‬
‭c. Breakdown voltage‬ ‭b. Doing precise calculations‬
‭d. Forward voltage‬ ‭c. The source voltage is low‬
‭d. The load resistance is low‬
‭ . The reverse current consists of‬
7
‭minority-carrier current and‬ ‭ 4. The second approximation works‬
1
‭a. Avalanche current‬ ‭well when‬
‭b. Forward current‬ ‭a. Troubleshooting‬
‭c. Surface-leakage current‬ ‭b. Load resistance is high‬
‭d. Zener current‬ ‭c. Source voltage is high‬
‭d. All of the above‬
‭ . How much voltage is there across the‬
8
‭second approximation of a silicon diode‬ ‭ 5. The only time you have to use the‬
1
‭when it is forward biased?‬ ‭third approximation is when‬
‭a. 0‬ ‭a. Load resistance is low‬
‭b. 0.3 V‬ ‭b. Source voltage is high‬
‭c. 0.7 V‬ ‭c. Troubleshooting‬
‭d. 1 V‬ ‭d. None of the above‬

‭ . How much current is there through‬

9 ‭For Nos. 16-22, refer to the figure below.‬
‭the second approximation of a silicon‬
‭diode when it is reverse-biased?‬
‭a. 0‬
‭b. 1 mA‬
‭c. 300 mA‬
‭d. None of the above‬

‭ 0. How much forward diode voltage is‬

1
‭there with the ideal diode‬
‭approximation?‬
‭a. 0‬
‭b. 0.7 V‬
‭c. More than 0.7 V‬
‭d. 1 V‬ ‭ 6. How much load current is there in‬
1
‭Fig. 3-21 with the ideal diode?‬
‭11. The bulk resistance of a 1N4001 is‬
‭ . 0‬
a
‭b. 11.3 mA‬
‭c. 12 mA‬
‭d. 25 mA‬ ‭CHAPTER 3 - DIODE CIRCUITS‬

‭ 7. How much load current is there in‬

1 ‭ . If N1/N2 = 4 and the primary voltage‬
1
‭Fig. 3-21 with the second‬ ‭is 120 V, what is the secondary voltage?‬
‭approximation?‬ ‭a. 0 V‬
‭a. 0‬ ‭b. 30 V‬
‭b. 11.3 mA‬ ‭c. 60 V‬
‭c. 12 mA‬ ‭d. 480 V‬
‭d. 25 mA‬
‭ . In a step-down transformer, which is‬
2
‭ 8. How much load current is there in‬
1 ‭larger?‬
‭Fig. 3-21 with the third approximation?‬ ‭a. Primary voltage‬
‭a. 0‬ ‭b. Secondary voltage‬
‭b. 11.3 mA‬ ‭c. Neither‬
‭c. 12 mA‬ ‭d. No answer possible‬
‭d. 25 mA‬
‭ . A transformer has a turns ratio of 2:1.‬
3
‭ 9. If the diode is open in Fig. 3-21, the‬
1 ‭What is the peak secondary voltage if‬
‭load voltage is‬ ‭115 Vrms is applied to the primary‬
‭a. 0‬ ‭winding?‬
‭b. 11.3 V‬ ‭a. 57.5 V‬
‭c. 20 V‬ ‭b. 81.3 V‬
‭d. -15 V‬ ‭c. 230 V‬
‭d. 325 V‬
‭ 0. If the resistor is ungrounded in Fig.‬
2
‭3-21, the voltage measured with a DMM‬ ‭ . With a half-wave rectified voltage‬
4
‭between the top of the resistor and‬ ‭across the load resistor, load current‬
‭ground is closest to‬ ‭flows for what part of a cycle?‬
‭a. 0‬ ‭a. 0°‬
‭b. 12 V‬ ‭b. 90°‬
‭c. 20 V‬ ‭c. 180°‬
‭d. -15 V‬ ‭d. 360°‬

‭ 1. The load voltage measures 12 V in‬

2 ‭ . Suppose line voltage may be as low‬
5
‭Fig. 3-21. The trouble may be‬ ‭as 105 Vrms or as high as 125 Vrms in a‬
‭a. A shorted diode‬ ‭half-wave rectifier. With a 5:1 step-down‬
‭b. An open diode‬ ‭transformer, the minimum peak load‬
‭c. An open load resistor‬ ‭voltage is closest to‬
‭d. Too much supply voltage‬ ‭a. 21 V‬
‭22. Using the third approximation in Fig.‬ ‭b. 25 V‬
‭3-21, how low must Rl be before the‬ ‭c. 29.7 V‬
‭diode’s bulk resistance must be‬ ‭d. 35.4 V‬
‭considered?‬
‭a. 1 Ω‬ ‭ . The voltage out of a bridge rectifier is‬
6
‭b. 10 Ω‬ ‭a‬
‭c. 23 Ω‬ ‭a. Half-wave signal‬
‭d. 100 Ω‬ ‭b. Full-wave signal‬
c‭ . Bridge-rectified signal‬ ‭d. 240 Hz‬
‭d. Sine wave‬
‭ 3. If line frequency is 60 Hz, the output‬
1
‭ . If the line voltage is 115 Vrms, a turns‬
7 ‭frequency of a bridge rectifier is‬
‭ratio of 5:1 means the rms secondary‬ ‭a. 30 Hz‬
‭voltage is closest to‬ ‭b. 60 Hz‬
‭a. 15 V‬ ‭c. 120 Hz‬
‭b. 23 V‬ ‭d. 240 Hz‬
‭c. 30 V‬
‭d. 35 V‬ ‭ 4. With the same secondary voltage‬
1
‭and filter, which has the most ripple?‬
‭ . What is the peak load voltage in a‬
8 ‭a. Half-wave rectifier‬
‭full-wave rectifier if the secondary‬ ‭b. Full-wave rectifier‬
‭voltage is 20 Vrms?‬ ‭c. Bridge rectifier‬
‭a. 0 V‬ ‭d. Impossible to say‬
‭b. 0.7 V‬
‭c. 14.1 V‬ ‭ 5. With the same secondary voltage‬
1
‭d. 28.3 V‬ ‭and filter, which produces the least load‬
‭voltage?‬
‭ . We want a peak load voltage of 40 V‬
9 ‭a. Half-wave rectifier‬
‭out of a bridge rectifier. What is the‬ ‭b. Full-wave rectifier‬
‭approximate rms value of the secondary‬ ‭c. Bridge rectifier‬
‭voltage?‬ ‭d. Impossible to say‬
‭a. 0 V‬
‭b. 14.4 V‬ ‭ 6. If the filtered load current is 10 mA,‬
1
‭c. 28.3 V‬ ‭which of the following has a diode‬
‭d. 56.6 V‬ ‭current of 10 mA?‬
‭a. Half-wave rectifier‬
‭ 0. With a full-wave rectified voltage‬
1 ‭b. Full-wave rectifier‬
‭across the load resistor, load current‬ ‭c. Bridge rectifier‬
‭flows for what part of a cycle?‬ ‭d. Impossible to say‬
‭a. 0°‬
‭b. 90°‬ ‭ 7. If the load current is 5 mA and the‬
1
‭c. 180°‬ ‭filter capacitance is 1000 μF, what is the‬
‭d. 360°‬ ‭peak-to-peak ripple out of a bridge‬
‭rectifier?‬
‭ 1. What is the peak load voltage out of‬
1 ‭a. 21.3 pV‬
‭a bridge rectifier for a secondary voltage‬ ‭b. 56.3 nV‬
‭of 12.6 Vrms? (Use second‬ ‭c. 21.3 mV‬
‭approximation.)‬ ‭d. 41.7 mV‬
‭a. 7.5 V‬
‭b. 16.4 V‬ ‭ 8. The diodes in a bridge rectifier each‬
1
‭c. 17.8 V‬ ‭have a maximum dc current rating of 2‬
‭d. 19.2 V‬ ‭A. This means the dc load current can‬
‭have a maximum value of‬
‭ 2. If line frequency is 60 Hz, the output‬
1 ‭a. 1 A‬
‭frequency of a half-wave rectifier is‬ ‭b. 2 A‬
‭a. 30 Hz‬ ‭c. 4 A‬
‭b. 60 Hz‬ ‭d. 8 A‬
‭c. 120 Hz‬
‭ 9. What is the PIV across each diode‬
1 ‭d. High voltage and high current‬
‭of a bridge rectifier with a secondary‬
‭voltage of 20 Vrms?‬
‭a. 14.1 V‬
‭b. 20 V‬ ‭ HAPTER 4 - SPECIAL-PURPOSE‬
C
‭c. 28.3 V‬ ‭DIODES‬
‭d. 34 V‬
‭ . What is true about the breakdown‬
1
‭ 0. If the secondary voltage increases in‬
2 ‭voltage in a zener diode?‬
‭a bridge rectifier with a capacitor-input‬ ‭a. It decreases when current increases.‬
‭filter, the load voltage will‬ ‭b. It destroys the diode.‬
‭a. Decrease‬ ‭c. It equals the current times the‬
‭b. Stay the same‬ ‭resistance.‬
‭c. Increase‬ ‭d. It is approximately constant.‬
‭d. None of these‬
‭ . Which of these is the best description‬
2
‭ 1. If the filter capacitance is increased,‬
2 ‭of a zener diode?‬
‭the ripple will‬ ‭a. It is a rectifier diode.‬
‭a. Decrease‬ ‭b. It is a constant-voltage device.‬
‭b. Stay the same‬ ‭c. It is a constant-current device.‬
‭c. Increase‬ ‭d. It works in the forward region.‬
‭d. None of these‬
‭ . A zener diode‬
3
‭ 2. A circuit that removes positive or‬
2 ‭a. Is a battery‬
‭negative parts of a waveform is called a‬ ‭b. Has a constant voltage in the‬
‭a. Clamper‬ ‭breakdown region‬
‭b. Clipper‬ ‭c. Has a barrier potential of 1 V‬
‭c. Diode clamp‬ ‭d. Is forward biased‬
‭d. Limiter‬
‭ . The voltage across the zener‬
4
‭ 3. A circuit that adds a positive or‬
2 ‭resistance is usually‬
‭negative dc voltage to an input sine‬ ‭a. Small‬
‭wave is called a‬ ‭b. Large‬
‭a. Clamper‬ ‭c. Measured in volts‬
‭b. Clipper‬ ‭d. Subtracted from the breakdown‬
‭c. Diode clamp‬ ‭voltage‬
‭d. Limiter‬
‭ . If the series resistance increases in‬
5
‭ 4. For a clamper circuit to operate‬
2 ‭an unloaded zener regulator, the zener‬
‭properly, its RlC time constant should be‬ ‭current‬
‭a. Equal to the period T of the signal‬ ‭a. Decreases‬
‭b. > 10 times the period T of the signal‬ ‭b. Stays the same‬
‭c. > 100 times the period T of the signal‬ ‭c. Increases‬
‭d. < 10 times the period T of the signal‬ ‭d. Equals the voltage divided by the‬
‭resistance‬
‭ 5. Voltage multipliers are circuits best‬
2
‭used to produce‬ ‭ . In the second approximation, the total‬
6
‭a. Low voltage and low current‬ ‭voltage across the zener diode is the‬
‭b. Low voltage and high current‬ ‭sum of the breakdown voltage and the‬
‭c. High voltage and low current‬ ‭voltage across the‬
‭ . Source‬
a ‭ . 14 V‬
c
‭b. Series resistor‬ ‭d. 18 V‬
‭c. Zener resistance‬
‭d. Zener diode‬ ‭ 3. When a zener diode is operating‬
1
‭above its power-rated temperature‬
‭ . The load voltage is approximately‬
7 ‭a. It will immediately be destroyed‬
‭constant when a zener diode is‬ ‭b. You must decrease its power rating‬
‭a. Forward biased‬ ‭c. You must increase its power rating‬
‭b. Reverse biased‬ ‭d. It will not be affected‬
‭c. Operating in the breakdown region‬
‭d. Unbiased‬ ‭ 4. Which of the following will not‬
1
‭indicate a zener diode’s breakdown‬
‭ . In a loaded zener regulator, which is‬
8 ‭voltage?‬
‭the largest current?‬ ‭a. In-circuit voltage drop‬
‭a. Series current‬ ‭b. Curve tracer‬
‭b. Zener current‬ ‭c. Reverse-bias test circuit‬
‭c. Load current‬ ‭d. DMM‬
‭d. None of these‬
‭ 5. At high frequencies, ordinary diodes‬
1
‭ . If the load resistance increases in a‬
9 ‭don’t work properly because of‬
‭zener regulator, the zener current‬ ‭a. Forward bias‬
‭a. Decreases‬ ‭b. Reverse bias‬
‭b. Stays the same‬ ‭c. Breakdown‬
‭c. Increases‬ ‭d. Charge storage‬
‭d. Equals the source voltage divided by‬
‭the series resistance‬ ‭ 6. The capacitance of a varactor diode‬
1
‭increases when the reverse voltage‬
‭ 0. If the load resistance decreases in a‬
1 ‭across it‬
‭zener regulator, the series current‬ ‭a. Decreases‬
‭a. Decreases‬ ‭b. Increases‬
‭b. Stays the same‬ ‭c. Breaks down‬
‭c. Increases‬ ‭d. Stores charges‬
‭d. Equals the source voltage divided by‬
‭the series resistance‬ ‭ 7. Breakdown does not destroy a zener‬
1
‭diode, provided the zener current is less‬
‭ 1. When the source voltage increases‬
1 ‭than the‬
‭in a zener regulator, which of these‬ ‭a. Breakdown voltage‬
‭currents remains approximately‬ ‭b. Zener test current‬
‭constant?‬ ‭c. Maximum zener current rating‬
‭a. Series current‬ ‭d. Barrier potential‬
‭b. Zener current‬
‭c. Load current‬ ‭ 8. As compared to a silicon rectifier‬
1
‭d. Total current‬ ‭diode, an LED has a‬
‭a. Lower forward voltage and lower‬
‭ 2. If the zener diode in a zener‬
1 ‭breakdown voltage‬
‭regulator is connected with the wrong‬ ‭b. Lower forward voltage and higher‬
‭polarity, the load voltage will be closest‬ ‭breakdown voltage‬
‭to‬ ‭c. Higher forward voltage and lower‬
‭a. 0.7 V‬ ‭breakdown voltage‬
‭b. 10 V‬
‭ . Higher forward voltage and higher‬
d ‭ . Unbiased‬
c
‭breakdown voltage‬ ‭d. Operated in the breakdown region‬

‭ 9. To display the digit 0 in a seven‬

1 ‭ 6. The device to use for rectifying a‬
2
‭segment indicator‬ ‭weak ac signal is a‬
‭a. C must be off‬ ‭a. Zener diode‬
‭b. G must be off‬ ‭b. Light-emitting diode‬
‭c. F must be on‬ ‭c. Varistor‬
‭d. All segments must be lighted‬ ‭d. Back diode‬

‭ 0. If the ambient temperature of a‬

2 ‭ 7. Which of the following has a‬
2
‭high-intensity LED increases, its‬ ‭negative-resistance region?‬
‭luminous flux output‬ ‭a. Tunnel diode‬
‭a. Increases‬ ‭b. Step-recovery diode‬
‭b. Decreases‬ ‭c. Schottky diode‬
‭c. Reverses‬ ‭d. Optocoupler‬
‭d. Remains constant‬
‭ 8. A blown-fuse indicator uses a‬
2
‭ 1. When the light decreases, the‬
2 ‭a. Zener diode‬
‭reverse minority-carrier current in a‬ ‭b. Constant-current diode‬
‭photodiode‬ ‭c. Light-emitting diode‬
‭a. Decreases‬ ‭d. PIN diode‬
‭b. Increases‬
‭c. Is unaffected‬ ‭ 9. To isolate an output circuit from an‬
2
‭d. Reverses direction‬ ‭input circuit, which is the device to use?‬
‭a. Back diode‬
‭ 2. The device associated with‬
2 ‭b. Optocoupler‬
‭voltage-controlled capacitance is a‬ ‭c. Seven-segment indicator‬
‭a. Light-emitting diode‬ ‭d. Tunnel diode‬
‭b. Photodiode‬
‭c. Varactor diode‬ ‭ 0. The diode with a forward voltage‬
3
‭d. Zener diode‬ ‭drop of approximately 0.25 V is the‬
‭a. Step-recovery diode‬
‭ 3. If the depletion layer width‬
2 ‭b. Schottky diode‬
‭decreases, the capacitance‬ ‭c. Back diode‬
‭a. Decreases‬ ‭d. Constant-current diode‬
‭b. Stays the same‬
‭c. Increases‬ ‭ 1. For typical operation, you need to‬
3
‭d. Is variable‬ ‭use reverse bias with a‬
‭a. Zener diode‬
‭ 4. When the reverse voltage‬
2 ‭b. Photodiode‬
‭decreases, the capacitance‬ ‭c. Varactor‬
‭a. Decreases‬ ‭d. All of the above‬
‭b. Stays the same‬
‭c. Increases‬ ‭ 2. As the forward current through a PIN‬
3
‭d. Has more bandwidth‬ ‭diode decreases, its resistance‬
‭a. Increases‬
‭ 5. The varactor is usually‬
2 ‭b. Decreases‬
‭a. Forward biased‬ ‭c. Remains constant‬
‭b. Reverse biased‬ ‭d. Cannot be determined‬
 ‭ . Into the emitter‬
c
‭d. Into the base supply‬

‭CHAPTER 5 - BJT FUNDAMENTALS‬ ‭ . The beta of a transistor is the ratio of‬

8
‭the‬
‭ . A transistor has how many pn‬
1 ‭a. Collector current to emitter current‬
‭junctions?‬ ‭b. Collector current to base current‬
‭a. 1‬ ‭c. Base current to collector current‬
‭b. 2‬ ‭d. Emitter current to collector current‬
‭c. 3‬
‭d. 4‬ ‭ . Increasing the collector supply‬
9
‭voltage will increase‬
‭ . In an npn transistor, the majority‬
2 ‭a. Base current‬
‭carriers in the emitter are‬ ‭b. Collector current‬
‭a. Free electrons‬ ‭c. Emitter current‬
‭b. Holes‬ ‭d. None of the above‬
‭c. Neither‬
‭d. Both‬ ‭ 0. The fact that there are many free‬
1
‭electrons in a transistor emitter region‬
‭ . The barrier potential across each‬
3 ‭means the emitter is‬
‭silicon depletion layer is‬ ‭a. Lightly doped‬
‭a. 0‬ ‭b. Heavily doped‬
‭b. 0.3 V‬ ‭c. Undoped‬
‭c. 0.7 V‬ ‭d. None of the above‬
‭d. 1 V‬
‭ 1. In a pnp transistor, the major carriers‬
1
‭ . The emitter diode is usually‬
4 ‭in the emitter are‬
‭a. Forward biased‬ ‭a. Free electrons‬
‭b. Reverse biased‬ ‭b. Holes‬
‭c. Nonconducting‬ ‭c. Neither‬
‭d. Operating in the breakdown region‬ ‭d. Both‬

‭ . For normal operation of the transistor,‬

5 ‭ 2. What is the most important fact‬
1
‭the collector diode has to be‬ ‭about the collector current?‬
‭a. Forward biased‬ ‭a. It is measured in milliamperes.‬
‭b. Reverse biased‬ ‭b. It equals the base current divided by‬
‭c. Nonconducting‬ ‭the current gain.‬
‭d. Operating in the breakdown region‬ ‭c. It is small.‬
‭d. It approximately equals the emitter‬
‭ . The base of an npn transistor is thin‬
6 ‭current.‬
‭and‬
‭a. Heavily doped‬ ‭ 3. If the current gain is 100 and the‬
1
‭b. Lightly doped‬ ‭collector current is 10 mA, the base‬
‭c. Metallic‬ ‭current is‬
‭d. Doped by a pentavalent material‬ ‭a. 10 μA‬
‭b. 100 μA‬
‭ . Most of the electrons in the base of‬
7 ‭c. 1 A‬
‭an npn transistor flow‬ ‭d. 10 A‬
‭a. Out of the base lead‬
‭b. Into the collector‬ ‭14. The base-emitter voltage is usually‬
‭ . Less than the base supply voltage‬
a ‭ ZT3904 surface-mount version, the‬
P
‭b. Equal to the base supply voltage‬ ‭2N3904‬
‭c. More than the base supply voltage‬ ‭a. Can handle less power‬
‭d. Cannot answer‬ ‭b. Can handle more power‬
‭c. Can handle the same power‬
‭ 5. The collector-emitter voltage is‬
1 ‭d. Is not rated‬
‭usually‬
‭a. Less than the collector supply voltage‬ ‭ 2. The current gain of a transistor is‬
2
‭b. Equal to the collector supply voltage‬ ‭defined as the ratio of the collector‬
‭c. More than the collector supply voltage‬ ‭current to the‬
‭d. Cannot answer‬ ‭a. Base current‬
‭b. Emitter current‬
‭ 6. The power dissipated by a transistor‬
1 ‭c. Supply current‬
‭approximately equals the collector‬ ‭d. Collector current‬
‭current times‬
‭a. Base-emitter voltage‬ ‭ 3. The graph of current gain versus‬
2
‭b. Collector-emitter voltage‬ ‭collector current indicates that the‬
‭c. Base supply voltage‬ ‭current gain‬
‭d. 0.7 V‬ ‭a. Is constant‬
‭b. Varies slightly‬
‭ 7. A transistor acts like a diode and a‬
1 ‭c. Varies significantly‬
‭a. Voltage source‬ ‭d. Equals the collector current divided‬
‭b. Current source‬ ‭by the base current‬
‭c. Resistance‬
‭d. Power supply‬ ‭ 4. When the collector current‬
2
‭increases, what does the current gain‬
‭ 8. In the active region, the collector‬
1 ‭do?‬
‭current is not changed significantly by‬ ‭a. Decreases‬
‭a. Base supply voltage‬ ‭b. Stays the same‬
‭b. Base current‬ ‭c. Increases‬
‭c. Current gain‬ ‭d. Any of the above‬
‭d. Collector resistance‬
‭ 5. As the temperature increases, the‬
2
‭ 9. The base-emitter voltage of the‬
1 ‭current gain‬
‭second approximation is‬ ‭a. Decreases‬
‭a. 0‬ ‭b. Remains the same‬
‭b. 0.3 V‬ ‭c. Increases‬
‭c. 0.7 V‬ ‭d. Can be any of the above‬
‭d. 1 V‬
‭ 6. When the base resistor increases,‬
2
‭ 0. If the base resistor is open, what is‬
2 ‭the collector voltage will probably‬
‭the collector current?‬ ‭a. Decrease‬
‭a. 0‬ ‭b. Stay the same‬
‭b. 1 mA‬ ‭c. Increase‬
‭c. 2 mA‬ ‭d. Do all of the above‬
‭d. 10 mA‬
‭ 7. If the base resistor is very small, the‬
2
‭ 1. When comparing the power‬
2 ‭transistor will operate in the‬
‭dissipation of a 2N3904 transistor to the‬ ‭a. Cutoff region‬
‭b. Active region‬
c‭ . Saturation region‬
‭d. Breakdown region‬ ‭ 4. When the Q point moves along the‬
3
‭load line, Vce decreases when the‬
‭ 8. Three different Q points are shown‬
2 ‭collector current‬
‭on a load line. The upper Q point‬ ‭a. Decreases‬
‭represents the‬ ‭b. Stays the same‬
‭a. Minimum current gain‬ ‭c. Increases‬
‭b. Intermediate current gain‬ ‭d. Does none of the above‬
‭c. Maximum current gain‬
‭d. Cutoff point‬ ‭ 5. When there is no base current in a‬
3
‭transistor switch, the output voltage from‬
‭ 9. If a transistor operates at the middle‬
2 ‭the transistor is‬
‭of the load line, a decrease in the base‬ ‭a. Low‬
‭resistance will move the Q point‬ ‭b. High‬
‭a. Down‬ ‭c. Unchanged‬
‭b. Up‬ ‭d. Unknown‬
‭c. Nowhere‬
‭d. Off the load line‬

‭ 0. If the base supply voltage is‬

3 ‭CHAPTER 6 - BJT BIASING‬
‭disconnected, the collector-emitter‬
‭voltage will equal‬ ‭ . A circuit with a fixed emitter current is‬
1
‭a. 0 V‬ ‭called‬
‭b. 6 V‬ ‭a. Base bias‬
‭c. 10.5 V‬ ‭b. Emitter bias‬
‭d. Collector supply voltage‬ ‭c. Transistor bias‬
‭d. Two-supply bias‬
‭ 1. If the base resistor has zero‬
3
‭resistance, the transistor will probably‬ ‭ . The first step in analyzing‬
2
‭be‬ ‭emitter-based circuits is to find the‬
‭a. Saturated‬ ‭a. Base current‬
‭b. In cutoff‬ ‭b. Emitter voltage‬
‭c. Destroyed‬ ‭c. Emitter current‬
‭d. None of the above‬ ‭d. Collector current‬

‭ 2. The collector current is 1.5 mA. If‬

3 ‭ . If the current gain is unknown in an‬
3
‭the current gain is 50, the base current‬ ‭emitter-biased circuit, you cannot‬
‭is‬ ‭calculate the‬
‭a. 3 μA‬ ‭a. Emitter voltage‬
‭b. 30 μA‬ ‭b. Emitter current‬
‭c. 150 μA‬ ‭c. Collector current‬
‭d. 3 mA‬ ‭d. Base current‬

‭ 3. The base current is 50 μA. If the‬

3 ‭ . If the emitter resistor is open, the‬
4
‭current gain is 100, the collector current‬ ‭collector voltage is‬
‭is closest in value to‬ ‭a. Low‬
‭a. 50 μA‬ ‭b. High‬
‭b. 500 μA‬ ‭c. Unchanged‬
‭c. 2 mA‬ ‭d. Unknown‬
‭d. 5 mA‬
‭ . If the collector resistor is open, the‬
5 ‭ . Collector voltage‬
‭collector voltage is‬
‭a. Low‬
‭b. High‬
‭c. Unchanged‬
‭d. Unknown‬
‭ . When the current gain increases from‬
6 ‭c. Greater than the base supply voltage‬
‭50 to 300 in an emitter-biased circuit,‬
‭the collector current‬
‭a. Remains almost the same‬
‭b. Decreases by a factor of 6‬
‭c. Increases by a factor of 6‬
‭d. Is zero‬
‭ . If the emitter resistance increases,‬
7 ‭d. Stable Q point‬
‭the collector voltage‬
‭a. Decreases‬
‭b. Stays the same‬
‭c. Increases‬
‭d. Breaks down the transistor‬
‭ . If the emitter resistance decreases,‬
8 ‭d. Decrease the emitter current‬
‭the‬
‭a. Q point moves up‬
‭b. Collector current decreases‬
‭c. Q point stays where it is‬
‭d. Current gain increases‬
‭ . The major advantage of a‬
9
‭phototransistor as compared to a‬
‭photodiode is its‬
‭a. Response to higher frequencies‬
‭b. AC operation‬
‭c. Increased sensitivity‬
‭d. Durability‬
‭ 0. For the emitter bias, the voltage‬
1 ‭a. Active region‬
‭across the emitter resistor is the same‬
‭as the voltage between the emitter and‬
‭the‬
‭a. Base‬
‭b. Collector‬
‭c. Emitter‬
‭d. Ground‬
‭ 1. For emitter bias, the voltage at the‬
1 ‭c. Current gain‬
‭emitter is 0.7 V less than the‬
‭a. Base voltage‬
‭b. Emitter voltage‬
c
‭d. Ground voltage‬
‭ 2. With voltage-divider bias, the base‬
1
‭voltage is‬
‭a. Less than the base supply voltage‬
‭b. Equal to the base supply voltage‬
‭d. Greater than the collector supply‬
‭voltage‬
‭ 3. VDB is noted for its‬
1
‭a. Unstable collector voltage‬
‭b. Varying emitter current‬
‭c. Large base current‬
‭ 4. With VDB, an increase in collector‬
1
‭resistance will‬
‭a. Decrease the emitter voltage‬
‭b. Decrease the collector voltage‬
‭c. Increase the emitter voltage‬
‭ 5. VDB has a stable Q point like‬
1
‭a. Base bias‬
‭b. Emitter bias‬
‭c. Collector-feedback bias‬
‭d. Emitter-feedback bias‬
‭ 6. VDB needs‬
1
‭a. Only three resistors‬
‭b. Only one supply‬
‭c. Precision resistors‬
‭d. More resistors to work better‬
‭ 7. VDB normally operates in the‬
1
‭b. Cutoff region‬
‭c. Saturation region‬
‭d. Breakdown region‬
‭ 8. The collector voltage of a VDB‬
1
‭circuit is not sensitive to changes in the‬
‭a. Supply voltage‬
‭b. Emitter resistance‬
‭d. Collector resistance‬
‭ 9. If the emitter resistance decreases‬
1 ‭d. Increase‬
‭in a VDB circuit, the collector voltage‬
‭a. Decreases‬ ‭ 6. If a splash of solder shorts the‬
2
‭b. Stays the same‬ ‭collector resistor of TSEB, the collector‬
‭c. Increases‬ ‭voltage will‬
‭d. Doubles‬ ‭a. Drop to zero‬
‭b. Equal the collector supply voltage‬
‭ 0. Base bias is associated with‬
2 ‭c. Stay the same‬
‭a. Amplifiers‬ ‭d. Double‬
‭b. Switching circuits‬
‭c. Stable Q point‬ ‭ 7. If the emitter resistance decreases‬
2
‭d. Fixed emitter current‬ ‭with TSEB, the collector voltage will‬
‭a. Decrease‬
‭ 1. If the emitter resistance is reduced‬
2 ‭b. Stay the same‬
‭by one-half in a VDB circuit, the‬ ‭c. Increase‬
‭collector current will‬ ‭d. Equal the collector supply voltage‬
‭a. Double‬
‭b. Drop in half‬ ‭ 8. If the base resistor opens with‬
2
‭c. Remain the same‬ ‭TSEB, the collector voltage will‬
‭d. Increase‬ ‭a. Decrease‬
‭b. Stay the same‬
‭ 2. If the collector resistance decreases‬
2 ‭c. Increase slightly‬
‭in a VDB circuit, the collector voltage will‬ ‭d. Equal the collector supply voltage‬
‭a. Decrease‬
‭b. Stay the same‬ ‭ 9. In TSEB, the base current must be‬
2
‭c. Increase‬ ‭very‬
‭d. Double‬ ‭a. Small‬
‭b. Large‬
‭ 3. The Q point of a VDB circuit is‬
2 ‭c. Unstable‬
‭a. Hypersensitive to changes in current‬ ‭d. Stable‬
‭gain‬
‭b. Somewhat sensitive to changes in‬ ‭ 0. The Q point of TSEB does not‬
3
‭current gain‬ ‭depend on the‬
‭c. Almost totally insensitive to changes‬ ‭a. Emitter resistance‬
‭in current gain‬ ‭b. Collector resistance‬
‭d. Greatly affected by temperature‬ ‭c. Current gain‬
‭changes‬ ‭d. Emitter voltage‬

‭ 4. The base voltage of two-supply‬

2 ‭ 1. The majority carriers in the emitter of‬
3
‭emitter bias (TSEB) is‬ ‭a pnp transistor are‬
‭a. 0.7 V‬ ‭a. Holes‬
‭b. Very large‬ ‭b. Free electrons‬
‭c. Near 0 V‬ ‭c. Trivalent atoms‬
‭d. 1.3 V‬ ‭d. Pentavalent atoms‬

‭ 5. If the emitter resistance doubles with‬

2 ‭ 2. The current gain of a pnp transistor‬
3
‭TSEB, the collector current will‬ ‭is‬
‭a. Drop in half‬ ‭a. The negative of the npn current gain‬
‭b. Stay the same‬ ‭b. The collector current divided by the‬
‭c. Double‬ ‭emitter current‬
c‭ . Near zero‬ ‭ . The base resistor is very large‬
a
‭d. The ratio of collector current to base‬ ‭b. The transistor is saturated‬
‭current‬ ‭c. ßdc is very small‬
‭d. Rß < 0.01 ßdc Re‬
‭ 3. Which is the largest current in a pnp‬
3
‭transistor?‬
‭a. Base current‬
‭b. Emitter current‬ ‭ HAPTER 7 - BASIC BJT‬
C
‭c. Collector current‬ ‭AMPLIFIERS‬
‭d. None of these‬
‭ . For dc, the current in a coupling‬
1
‭ 4. The currents of a pnp transistor are‬
3 ‭circuit is‬
‭a. Usually smaller than npn currents‬ ‭a. Zero‬
‭b. Opposite npn currents‬ ‭b. Maximum‬
‭c. Usually larger than npn currents‬ ‭c. Minimum‬
‭d. Negative‬ ‭d. Average‬

‭ 5. With pnp voltage-divider bias, you‬

3 ‭ . The current in a coupling circuit for‬
2
‭must use‬ ‭high frequencies is‬
‭a. Negative power supplies‬ ‭a. Zero‬
‭b. Positive power supplies‬ ‭b. Maximum‬
‭c. Resistors‬ ‭c. Minimum‬
‭d. Grounds‬ ‭d. Average‬

‭ 6. With a TSEB pnp circuit using a‬

3 ‭ . A coupling capacitor is‬
3
‭negative VCC supply, the emitter‬ ‭a. A dc short‬
‭voltage is‬ ‭b. An ac open‬
‭a. Equal to the base voltage‬ ‭c. A dc open and an ac short‬
‭b. 0.7 V higher than the base voltage‬ ‭d. A dc short and an ac open‬
‭c. 0.7 V lower than the base voltage‬
‭d. Equal to the collector voltage‬ ‭ . In a bypass circuit, the top of a‬
4
‭capacitor iS‬
‭ 7. In a well-designed VDB circuit, the‬
3 ‭a. An open‬
‭base current is‬ ‭b. A short‬
‭a. Much larger than the voltage divider‬ ‭c. An ac ground‬
‭current‬ ‭d. A mechanical ground‬
‭b. Equal to the emitter current‬
‭c. Much smaller than the voltage divider‬ ‭ . The capacitor that produces an ac‬
5
‭current‬ ‭ground is called a (an)‬
‭d. Equal to the collector current‬ ‭a. Bypass capacitor‬
‭b. Coupling capacitor‬
‭ 8. In a VDB circuit, the base input‬
3 ‭c. DC open‬
‭resistance Rin is‬ ‭d. AC open‬
‭a. Equal to ßdc Re‬
‭b. Normally smaller than Rth‬ ‭ . The capacitors of a CE amplifier‬
6
‭c. Equal to ßdc Rc‬ ‭appear to be‬
‭d. Independent of ßdc‬ ‭a. Open to ac‬
‭b. Shorted to dc‬
‭ 9. In a TSEB circuit, the base voltage‬
3 ‭c. Open to supply voltage‬
‭is approximately zero when‬ ‭d. Shorted to ac‬
 ‭ . 100 Ω‬
c
‭ . Reducing all dc sources to zero is‬
7 ‭d. 1 kΩ‬
‭one of the steps in getting the‬
‭a. DC-equivalent circuit‬ ‭ 4. A graph of ac emitter current versus‬
1
‭b. AC-equivalent circuit‬ ‭ac base-emitter voltage applies to the‬
‭c. Complete amplifier circuit‬ ‭a. Resistor‬
‭d. Voltage-divider-biased circuit‬ ‭b. Emitter diode‬
‭c. Collector diode‬
‭ . The ac-equivalent circuit is derived‬
8 ‭d. Power supply‬
‭from the original circuit by shorting all‬
‭a. Resistors‬ ‭ 5. The output voltage of a CE amplifier‬
1
‭b. Capacitors‬ ‭is‬
‭c. Inductors‬ ‭a. Amplified‬
‭d. Transistors‬ ‭b. Inverted‬
‭c. 180° out of phase with the input‬
‭ . When the ac base voltage is too‬
9 ‭d. All of the above‬
‭large, the ac emitter current is‬
‭a. Sinusoidal‬ ‭ 6. The emitter of a CE amplifier has no‬
1
‭b. Constant‬ ‭ac voltage because of the‬
‭c. Distorted‬ ‭a. DC voltage on it‬
‭d. Alternating‬ ‭b. Bypass capacitor‬
‭c. Coupling capacitor‬
‭ 0. In a CE amplifier with a large input‬
1 ‭d. Load resistor‬
‭signal, the positive half-cycle of the ac‬
‭emitter current is‬ ‭ 7. The voltage across the load resistor‬
1
‭a. Equal to the negative half-cycle‬ ‭of a capacitor-coupled CE amplifier is‬
‭b. Smaller than the negative half-cycle‬ ‭a. DC and ac‬
‭c. Larger than the negative half-cycle‬ ‭b. DC only‬
‭d. Equal to the negative half-cycle‬ ‭c. AC only‬
‭d. Neither dc nor ac‬
‭ 1. AC emitter resistance equals 25 mV‬
1
‭divided by the‬ ‭ 8. The ac collector current is‬
1
‭a. Quiescent base current‬ ‭approximately equal to the‬
‭b. DC emitter current‬ ‭a. AC base current‬
‭c. AC emitter current‬ ‭b. AC emitter current‬
‭d. Change in collector current‬ ‭c. AC source current‬
‭d. AC bypass current‬
‭ 2. To reduce the distortion in a CE‬
1
‭amplifier, reduce the‬ ‭ 9. The ac emitter current multiplied by‬
1
‭a. DC emitter current‬ ‭the ac emitter resistance equals the‬
‭b. Base-emitter voltage‬ ‭a. DC emitter voltage‬
‭c. Collector current‬ ‭b. AC base voltage‬
‭d. AC base voltage‬ ‭c. AC collector voltage‬
‭d. Supply voltage‬
‭ 3. If the ac voltage across the emitter‬
1
‭diode is 1 mV and the ac emitter current‬ ‭ 0. The ac collector current equals the‬
2
‭is 100 μA, the ac resistance of the‬ ‭ac base current multiplied by the‬
‭emitter diode is‬ ‭a. AC collector resistance‬
‭a. 1 Ω‬ ‭b. DC current gain‬
‭b. 10 Ω‬ ‭c. AC current gain‬
‭d. Generator voltage‬ ‭ . Large‬
c
‭d. Zero‬
‭ 1. When the emitter resistance Re‬
2
‭doubles, the ac emitter resistance‬ ‭ 8. To reduce the distortion of an‬
2
‭a. Increases‬ ‭amplified signal, you can increase the‬
‭b. Decreases‬ ‭a. Collector resistance‬
‭c. Remains the same‬ ‭b. Emitter feedback resistance‬
‭d. Cannot be determined‬ ‭c. Generator resistance‬
‭d. Load resistance‬
‭ 2. The emitter is at ac ground in a‬
2
‭a. CB stage‬ ‭ 9. The emitter of a swamped amplifier‬
2
‭b. CC stage‬ ‭a. Is grounded‬
‭c. CE stage‬ ‭b. Has no dc voltage‬
‭d. None of these‬ ‭c. Has an ac voltage‬
‭d. Has no ac voltage‬
‭ 3. The output voltage of an emitter-‬
2
‭bypassed CE stage is usually‬ ‭ 0. A swamped amplifier uses‬
3
‭a. Constant‬ ‭a. Base bias‬
‭b. Dependent on r'e‬ ‭b. Positive feedback‬
‭c. Small‬ ‭c. Negative feedback‬
‭d. Less than one‬ ‭d. A grounded emitter‬

‭ 4. The input impedance of the base‬

2 ‭ 1. The feedback resistor‬
3
‭decreases when‬ ‭a. Increases voltage gain‬
‭a. ß increases‬ ‭b. Reduces distortion‬
‭b. Supply voltage increases‬ ‭c. Decreases collector resistance‬
‭c. ß decreases‬ ‭d. Decreases input impedance‬
‭d. AC collector resistance increases‬
‭ 2. The feedback resistor‬
3
‭ 5. Voltage gain is directly proportional‬
2 ‭a. Stabilizes voltage gain‬
‭to‬ ‭b. Increases distortion‬
‭a. ß‬ ‭c. Increases collector resistance‬
‭b. r'e‬ ‭d. Decreases input impedance‬
‭c. DC collector voltage‬
‭d. AC collector resistance‬ ‭ 3. If the emitter-bypass capacitor‬
3
‭opens, the ac output voltage will‬
‭ 6. Compared to the ac resistance of‬
2 ‭a. Decrease‬
‭the emitter diode, the feedback‬ ‭b. Increase‬
‭resistance of a swamped amplifier‬ ‭c. Remain the same‬
‭should be‬ ‭d. Equal zero‬
‭a. Small‬
‭b. Equal‬ ‭ 4. If the load resistance is open, the ac‬
3
‭c. Large‬ ‭output voltage will‬
‭d. Zero‬ ‭a. Decrease‬
‭b. Increase‬
‭ 7. Compared to a CE stage, a‬
2 ‭c. Remain the same‬
‭swamped amplifier has an input‬ ‭d. Equal zero‬
‭impedance that is‬
‭a. Small‬ ‭ 5. If the output-coupling capacitor is‬
3
‭b. Equal‬ ‭open, the ac input voltage will‬
‭ . Decrease‬
a
‭b. Increase‬
‭c. Remain the same‬
‭d. Equal zero‬

‭ 6. If the emitter resistor is open, the ac‬

3
‭input voltage at the base will‬
‭a. Decrease‬
‭b. Increase‬
‭c. Remain the same‬
‭d. Equal zero‬

‭ 7. If the collector resistor is open, the‬

3
‭ac input voltage at the base will‬
‭a. Decrease‬
‭b. Increase‬
‭c. Remain the same‬
‭d. Equal approximately zero‬