QPA2225D

28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Product Overview
Qorvo’s QPA2225D is a wide band MMIC driver amplifier
fabricated on Qorvo’s production 0.15 um GaN on SiC
process (QGaN15). Covering 28 – 38 GHz, the QPA2225D
provides > 0.4 W of saturated output power with >23 dB of
small-signal gain.

The QPA2225D MMIC dimensions are 1.65 x 0.67 x 0.05

mm. It can support a variety of operating conditions to
best support system requirements. With good thermal
properties, it can support a range of bias voltages.
Key Features
The QPA2225D has DC blocking capacitors on both RF
• Frequency Range: 28 – 38 GHz
ports, which are matched to 50 ohms.
• PSAT (PIN = 13 dBm): > 26 dBm
The QPA2225D is ideal for supporting communications • Small Signal Gain: > 23 dB
and radar applications in both commercial and military • IM3 (POUT/Tone = 20 dBm): -20 dBc
markets. • Bias: CW, VD = +20 V, IDQ = 64 mA, VG = -2.5 V typ.
• Die Dimensions: 1.65 x 0.67 x 0.05 mm
Lead-free and RoHS compliant.

Performance is typical across frequency. Please

reference electrical specification table and data plots for
more details.

Functional Block Diagram

Applications
• Communications
• Radar
• Satellite Communications
• Electronic Warfare

Ordering Information
Part No. Description
28 – 38 GHz 0.4 Watt GaN Amplifier
QPA2225D
(100 pcs.)
QPA2225DEVBA Evaluation Board for QPA2225D

Data Sheet Rev. C, November 2022 | Subject to change without notice 1 of 23 www.qorvo.com
© 2022 Qorvo US, Inc. All rights reserved. Confidential
 QPA2225D
28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Absolute Maximum Ratings Recommended Operating Conditions

Parameter Value / Range Parameter Min Typ. Max Units
Drain Voltage (VD) 29.5 V Drain Voltage (VD) +20 V
Gate Voltage Range (VG) -6 V to 0 V Drain Current, (IDQ) 64 mA
Drain Current (ID) 456 mA Drain Current, RF (ID_Drive) See chart page 6 mA
Gate Current (IG) See plot page 18 Gate Voltage Range (VG) −2 to -2.9 V
Power Dissipation (PDISS), 85 °C 5W
Gate Current, RF (IG_Drive) See chart page 6 mA
Input Power (PIN), CW, 50 Ω,
18 dBm TBASE Range −40 +85 ºC
VD = 20 V, IDQ = 64 mA, TBASE = 85 °C
Electrical specifications are measured at specified test
Input Power (PIN), CW, 3:1 VSWR, conditions. Specifications are not guaranteed over all
18 dBm
VD = 20 V, IDQ = 64 mA, TBASE = 85 °C recommended operating conditions.
Mounting Temperature (30 seconds) 320 ºC
Storage Temperature -55 to +150 ºC
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.

Electrical Specifications
Parameter Conditions (1) (2) Min Typ. Max Units
Operational Frequency Range 28 38 GHz
Output Power at Saturation, PSAT PIN = +13 dBm > 26 dBm
Large Signal Gain PIN = +13 dBm > 13 dB
Small Signal Gain, S21 > 23 dB
Input Return Loss, IRL 5 dB
Output Return Loss, ORL 5 dB
POUT/Tone = 20 dBm; Freq. = 35 GHz;
3RD Intermodulation Products, IM3 -20 dBc
Δf = 100 MHz
POUT/Tone = 20 dBm; Freq. = 35 GHz;
5TH Intermodulation Products, IM5 -30 dBc
Δf = 100 MHz
PSAT Temperature Coefficient TDIFF = −40 ºC to +85 ºC; PIN = +13 dBm -0.02 dBm/ºC
S21 Temperature Coefficient TDIFF = −40 ºC to +85 ºC -0.07 dB/ºC
Notes:

1. Test conditions unless otherwise noted: CW, VD = + 20 V, IDQ = 64 mA, VG = -2.5V +/- typical, TBASE = +25 ºC, Z0 = 50 Ω
2. TBASE is back side of 20 mil CuMo carrier plate with AuSn solder

Data Sheet Rev. C, November 2022 | Subject to change without notice 2 of 23 www.qorvo.com
© 2022 Qorvo US, Inc. All rights reserved. Confidential
 QPA2225D
28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Performance Plots – Small Signal

Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, TBASE = +25 ºC

Gain vs. Frequency vs. Temp. Gain vs. Frequency vs. VD

36 36
32 32
28 28
24 24
S21 (dB)

S21 (dB)
20 20
16 16
12 12
12 V 14 V 16 V
8 8
18 V 20 V 22 V
4 4
-40 C +25 C +85 C 24 V 26 V 28 V
0 0
24 26 28 30 32 34 36 38 40 42 24 26 28 30 32 34 36 38 40 42
Frequency (GHz) Frequency (GHz)

Input RL vs. Frequency vs. Temp. Input RL vs. Frequency vs. VD

0 0

-5 -5

-10 -10
S11 (dB)

S11 (dB)

-15 -15

-20 -20
12 V 14 V 16 V
-25 -25 18 V 20 V 22 V
-40 C +25 C +85 C 24 V 26 V 28 V
-30 -30
24 26 28 30 32 34 36 38 40 42 24 26 28 30 32 34 36 38 40 42
Frequency (GHz) Frequency (GHz)

Output RL vs. Frequency vs. Temp. Output RL vs. Frequency vs. VD

0 0
-40 C +25 C +85 C
-5 -5

-10 -10
S22 (dB)

S22 (dB)

-15 -15
12 V 14 V
16 V 18 V
-20 -20
20 V 22 V
-25 -25 24 V 26 V
28 V
-30 -30
24 26 28 30 32 34 36 38 40 42 24 26 28 30 32 34 36 38 40 42
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. C, November 2022 | Subject to change without notice 3 of 23 www.qorvo.com
© 2022 Qorvo US, Inc. All rights reserved. Confidential
 QPA2225D
28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Performance Plots – Small Signal

Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, TBASE = +25 ºC

Gain vs. Frequency vs. IDQ

36
32
28
24
S21 (dB)

20
16
12
8
4
44 mA 64 mA 84 mA
0
24 26 28 30 32 34 36 38 40 42
Frequency (GHz)

Input RL vs. Frequency vs. IDQ Output RL vs. Frequency vs. IDQ
0 0

-5 -5

-10 -10
S11 (dB)

S22 (dB)

-15 -15

-20 -20

-25 -25
44 mA 64 mA 84 mA 44 mA 64 mA 84 mA
-30 -30
24 26 28 30 32 34 36 38 40 42 24 26 28 30 32 34 36 38 40 42
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. C, November 2022 | Subject to change without notice 4 of 23 www.qorvo.com
© 2022 Qorvo US, Inc. All rights reserved. Confidential
 QPA2225D
28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Performance Plots – Large Signal (CW)

Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, PIN = +13dBm, TBASE = +25 ºC

Output Power vs. Freq. vs. Temp. PAE vs. Freq. vs. Temp.
30 22
29 20

Power Added Efficiency (%)

28 18
Output Power (dBm)

27 16
14
26
12
25
10
24
8
23 6
22 4
21 -40 C +25 C +85 C 2 -40 C +25 C +85 C
20 0
24 26 28 30 32 34 36 38 40 42 24 26 28 30 32 34 36 38 40 42
Frequency (GHz) Frequency (GHz)

PAE vs. Freq. vs. VD

Output Power vs. Freq. vs. VD 22
30
20
Power Added Efficiency (%)

29
18
28
Output Power (dBm)

16
27 14
26 12
25 10
24 8
23 6
4
22 12 V 14 V 16 V 18 V 20 V
12 V 14 V 16 V 18 V 20 V 2
21 22 V 24 V 26 V 28 V
22 V 24 V 26 V 28 V 0
20 24 26 28 30 32 34 36 38 40 42
24 26 28 30 32 34 36 38 40 42 Frequency (GHz)
Frequency (GHz)

Output Power vs. Freq. vs. IDQ PAE vs. Freq. vs. IDQ
30 22
29 20
Power Added Efficiency (%)

28 18
Output Power (dBm)

27 16
14
26
12
25
10
24
8
23 6
22 4
21 44 mA 64 mA 84 mA 2 64 mA 64 mA 84 mA
20 0
24 26 28 30 32 34 36 38 40 42 24 26 28 30 32 34 36 38 40 42
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. C, November 2022 | Subject to change without notice 5 of 23 www.qorvo.com
© 2022 Qorvo US, Inc. All rights reserved. Confidential
 QPA2225D
28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Performance Plots – Large Signal (CW)

Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, PIN = +13dBm, TBASE = +25 ºC

Drain Current vs. Freq. vs. Temp. Gate Current vs. Freq. vs. Temp.
300 2.0

1.5
250
Drain Current (mA)

Gate Current (mA)

1.0
200
0.5

150 0.0

-0.5
100
-1.0
50
-1.5
-40 C +25 C +85 C -40 C +25 C +85 C
0 -2.0
24 26 28 30 32 34 36 38 40 42 24 26 28 30 32 34 36 38 40 42
Frequency (GHz) Frequency (GHz)

Gate Current vs. Freq. vs. VD

Drain Current vs. Freq. vs. VD 2.0
300
1.5
Gate Current (mA)

250
1.0
Drain Current (mA)

200 0.5

0.0
150
-0.5
100
-1.0

-1.5 12 V 14 V 16 V 18 V 20 V
50 12 V 14 V 16 V 18 V 20 V
22 V 24 V 26 V 28 V
22 V 24 V 26 V 28 V -2.0
0 24 26 28 30 32 34 36 38 40 42
24 26 28 30 32 34 36 38 40 42 Frequency (GHz)
Frequency (GHz)

Drain Current vs. Freq. vs. IDQ Gate Current vs. Freq. vs. IDQ
300 2.0

1.5
250
Drain Current (mA)

Gate Current (mA)

1.0
200
0.5

150 0.0

-0.5
100
-1.0
50
-1.5
44 mA 64 mA 84 mA 44 mA 64 mA 84 mA
0 -2.0
24 26 28 30 32 34 36 38 40 42 24 26 28 30 32 34 36 38 40 42
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. C, November 2022 | Subject to change without notice 6 of 23 www.qorvo.com
© 2022 Qorvo US, Inc. All rights reserved. Confidential
 QPA2225D
28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Performance Plots – Large Signal (CW)

Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, PIN = +13dBm, TBASE = +25 ºC

Output Power vs. Input Power vs. Freq. PAE vs. Input Power vs. Freq.
30 22
28 20

Power Added Efficiency (%)

26 18
Output Power (dBm)

24 16
14
22
12
20
10
18
8
16 28 GHz 30 GHz 6 28 GHz 30 GHz
14 32 GHz 34 GHz 4 32 GHz 34 GHz
12 2 36 GHz 38 GHz
36 GHz 38 GHz
10 0
-8 -6 -4 -2 0 2 4 6 8 10 12 14 -8 -6 -4 -2 0 2 4 6 8 10 12 14
Input Power (dBm) Input Power (dBm)

Output Power vs. Input Power vs. Temp. PAE vs. Input Power vs. Temp.
30 20
35 GHz 35 GHz
28 18
Power Added Efficiency (%)

26 16
Output Power (dBm)

24 14
22 12
20 10
18 8
16 6
14 4
12 2
-40 C +25 C +85 C -40 C +25 C +85 C
10 0
-8 -6 -4 -2 0 2 4 6 8 10 12 14 -8 -6 -4 -2 0 2 4 6 8 10 12 14
Input Power (dBm) Input Power (dBm)

Output Power vs. Input Power vs. VD PAE vs. Input Power vs. VD
30 20
35 GHz 35 GHz
28 18
Power Added Efficiency (%)

26 16 12 V 14 V 16 V
Output Power (dBm)

24 14 18 V 20 V 22 V
24 V 26 V 28 V
22 12
20 10
18 8
16 6
14 4
12 V 14 V 16 V 18 V 20 V
12 2
22 V 24 V 26 V 28 V
10 0
-8 -6 -4 -2 0 2 4 6 8 10 12 14 -8 -6 -4 -2 0 2 4 6 8 10 12 14
Input Power (dBm) Input Power (dBm)

Data Sheet Rev. C, November 2022 | Subject to change without notice 7 of 23 www.qorvo.com
© 2022 Qorvo US, Inc. All rights reserved. Confidential
 QPA2225D
28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Performance Plots – Large Signal (CW)

Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, PIN = +13dBm, TBASE = +25 ºC

Drain Current vs. Input Power vs. Freq. Gate Current vs. Input Power vs. Freq.
300 2.0

1.5
250
Drain Current (mA)

Gate Current (mA)

1.0
200
0.5

150 0.0

-0.5
100 28 GHz 30 GHz
28 GHz 30 GHz
-1.0
50 32 GHz 34 GHz 32 GHz 34 GHz
-1.5
36 GHz 38 GHz 36 GHz 38 GHz
0 -2.0
-8 -6 -4 -2 0 2 4 6 8 10 12 14 -8 -6 -4 -2 0 2 4 6 8 10 12 14
Input Power (dBm) Input Power (dBm)

Drain Current vs. Input Power vs. Temp. Gate Current vs. Input Power vs. Temp.
300 2.0
35 GHz 35 GHz
1.5
250
Drain Current (mA)

Gate Current (mA)

1.0
200
0.5

150 0.0

-0.5
100
-1.0
50
-1.5
-40 C +25 C +85 C -40 C +25 C +85 C
0 -2.0
-8 -6 -4 -2 0 2 4 6 8 10 12 14 -8 -6 -4 -2 0 2 4 6 8 10 12 14
Input Power (dBm) Input Power (dBm)

Drain Current vs. Input Power vs. VD Gate Current vs. Input Power vs. VD
300 2.0
35 GHz 35 GHz
1.5
250
Drain Current (mA)

Gate Current (mA)

1.0
200
0.5

150 0.0

-0.5
100
-1.0
50 12 V 14 V 16 V 18 V 20 V 12 V 14 V 16 V 18 V 20 V
-1.5
22 V 24 V 26 V 28 V 22 V 24 V 26 V 28 V
0 -2.0
-8 -6 -4 -2 0 2 4 6 8 10 12 14 -8 -6 -4 -2 0 2 4 6 8 10 12 14
Input Power (dBm) Input Power (dBm)

Data Sheet Rev. C, November 2022 | Subject to change without notice 8 of 23 www.qorvo.com
© 2022 Qorvo US, Inc. All rights reserved. Confidential
 QPA2225D
28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Performance Plots – Large Signal (CW)

Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, PIN = +13dBm, TBASE = +25 ºC

Power Gain vs. Freq. vs. Temp. Power Gain vs. Input Power vs. Freq.
20 30
18 28
16 26
Power Gain (dB)

Power Gain (dB)

14 24
12 22
10 20
8 18
6 16 28 GHz 30 GHz
4 14 32 GHz 34 GHz
2 -40 C +25 C +85 C 12 36 GHz 38 GHz
0 10
24 26 28 30 32 34 36 38 40 42 -8 -6 -4 -2 0 2 4 6 8 10 12 14
Frequency (GHz) Input Power (dBm)

Power Gain vs. Freq. vs. VD Power Gain vs. Input Power vs. VD
20 30
35 GHz
18 28
16 26
Power Gain (dB)

Power Gain (dB)

14 24
12 22
10 20
8 18
6 16
4 14
12 V 14 V 16 V 18 V 20 V 12 V 14 V 16 V 18 V 20 V
2 12
22 V 24 V 26 V 28 V 22 V 24 V 26 V 28 V
0 10
24 26 28 30 32 34 36 38 40 42 -8 -6 -4 -2 0 2 4 6 8 10 12 14
Frequency (GHz) Input Power (dBm)

Power Gain vs. Freq. vs. IDQ Power Gain vs. Input Power vs. Temp.
20 30
35 GHz
18 28
16 26
Power Gain (dB)

Power Gain (dB)

14 24
12 22
10 20
8 18
6 16
4 14
2 44 mA 64 mA 84 mA 12
-40 C +25 C +85 C
0 10
24 26 28 30 32 34 36 38 40 42 -8 -6 -4 -2 0 2 4 6 8 10 12 14
Frequency (GHz) Input Power (dBm)

Data Sheet Rev. C, November 2022 | Subject to change without notice 9 of 23 www.qorvo.com
© 2022 Qorvo US, Inc. All rights reserved. Confidential
 QPA2225D
28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Performance Plots – Large Signal (Pulsed)

Test conditions, unless otherwise noted: Pulsed VD = 20 V, IDQ = 64 mA, PW = 100 µs, DC = 10%, PIN = +13dBm, TBASE = +25 ºC

PAE vs. Freq. vs. Temp.

Output Power vs. Freq. vs. Temp. 22
30
20

Power Added Efficiency (%)

29
18
28
Output Power (dBm)

16
27
14
26
12
25
10
24
8
23
6
22
4
21 -40 C +25 C +85 C 2 -40 C +25 C +85 C
20
0
24 26 28 30 32 34 36 38 40 42
24 26 28 30 32 34 36 38 40 42
Frequency (GHz)
Frequency (GHz)

Output Power vs. Freq. vs. VD PAE vs. Freq. vs. VD

30 22
20
Power Added Efficiency (%)

29
28 18
Output Power (dBm)

27 16
14
26
12
25
10
24
8
23 6
22 4
21 12 V 20 V 28 V 2 12 V 20 V 28 V
20 0
24 26 28 30 32 34 36 38 40 42 24 26 28 30 32 34 36 38 40 42
Frequency (GHz) Frequency (GHz)

Output Power vs. Freq. vs. IDQ PAE vs. Freq. vs. IDQ
30 22
29 20
Power Added Efficiency (%)

28 18
Output Power (dBm)

27 16
14
26
12
25
10
24
8
23 6
22 4
21 44 mA 64 mA 84 mA 2 64 mA 64 mA 84 mA
20 0
24 26 28 30 32 34 36 38 40 42 24 26 28 30 32 34 36 38 40 42
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. C, November 2022 | Subject to change without notice 10 of 23 www.qorvo.com
© 2022 Qorvo US, Inc. All rights reserved. Confidential
 QPA2225D
28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Performance Plots – Large Signal (Pulsed)

Test conditions, unless otherwise noted: Pulsed VD = 20 V, IDQ = 64 mA, PW = 100 µs, DC = 10%, PIN = +13dBm, TBASE = +25 ºC

Drain Current vs. Freq. vs. Temp. Gate Current vs. Freq. vs. Temp.
300 2.0

1.5
250
Drain Current (mA)

Gate Current (mA)

1.0
200
0.5

150 0.0

-0.5
100
-1.0
50
-1.5
-40 C +25 C +85 C -40 C +25 C +85 C
0 -2.0
24 26 28 30 32 34 36 38 40 42 24 26 28 30 32 34 36 38 40 42
Frequency (GHz) Frequency (GHz)

Drain Current vs. Freq. vs. VD Gate Current vs. Freq. vs. VD
300 2.0

1.5
250
Gate Current (mA)

1.0
Drain Current (mA)

200
0.5

150 0.0

-0.5
100
-1.0
50
-1.5
12 V 20 V 28 V 12 V 20 V 28 V
0 -2.0
24 26 28 30 32 34 36 38 40 42 24 26 28 30 32 34 36 38 40 42
Frequency (GHz) Frequency (GHz)

Drain Current vs. Freq. vs. VD Gate Current vs. Freq. vs. IDQ
300 2.0

1.5
250
Gate Current (mA)

1.0
Drain Current (mA)

200
0.5

150 0.0

-0.5
100
-1.0
50
-1.5
12 V 20 V 28 V 44 mA 64 mA 84 mA
0 -2.0
24 26 28 30 32 34 36 38 40 42 24 26 28 30 32 34 36 38 40 42
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. C, November 2022 | Subject to change without notice 11 of 23 www.qorvo.com
© 2022 Qorvo US, Inc. All rights reserved. Confidential
 QPA2225D
28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Performance Plots – Large Signal (Pulsed)

Test conditions, unless otherwise noted: Pulsed VD = 20 V, IDQ = 64 mA, PW = 100 µs, DC = 10%, PIN = +13dBm, TBASE = +25 ºC

Output Power vs. Input Power vs. Freq. PAE vs. Input Power vs. Freq.
30 22
28 20

Power Added Efficiency (%)

26 18
Output Power (dBm)

24 16
14
22
12
20
10
18
8
16 28 GHz 30 GHz 6 28 GHz 30 GHz
14 32 GHz 34 GHz 4 32 GHz 34 GHz
12 2 36 GHz 38 GHz
36 GHz 38 GHz
10 0
-8 -6 -4 -2 0 2 4 6 8 10 12 14 -8 -6 -4 -2 0 2 4 6 8 10 12 14
Input Power (dBm) Input Power (dBm)

Output Power vs. Input Power vs. Temp. PAE vs. Input Power vs. Temp.
30 22
35 GHz 35 GHz
28 20
Power Added Efficiency (%)

26 18
Output Power (dBm)

24 16
14
22
12
20
10
18
8
16 6
14 4
12 2
-40 C +25 C +85 C -40 C +25 C +85 C
10 0
-8 -6 -4 -2 0 2 4 6 8 10 12 14 -8 -6 -4 -2 0 2 4 6 8 10 12 14
Input Power (dBm) Input Power (dBm)

Power Gain vs. Input Power vs. VD PAE vs. Input Power vs. VD
30 22
35 GHz 35 GHz
28 20
Power Added Efficiency (%)

26 18
16
Power Gain (dB)

24
14
22
12
20
10
18
8
16 6
14 4
12 12 V 20 V 28 V 2 12 V 20 V 28 V
10 0
-8 -6 -4 -2 0 2 4 6 8 10 12 14 -8 -6 -4 -2 0 2 4 6 8 10 12 14
Input Power (dBm) Input Power (dBm)

Data Sheet Rev. C, November 2022 | Subject to change without notice 12 of 23 www.qorvo.com
© 2022 Qorvo US, Inc. All rights reserved. Confidential
 QPA2225D
28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Performance Plots – Large Signal (Pulsed)

Test conditions, unless otherwise noted: Pulsed VD = 20 V, IDQ = 64 mA, PW = 100 µs, DC = 10%, PIN = +13dBm, TBASE = +25 ºC

Drain Current vs. Input Power vs. Freq. Gate Current vs. Input Power vs. Freq.
300 2.0

1.5
250
Drain Current (mA)

Gate Current (mA)

1.0
200
0.5

150 0.0

-0.5
100 28 GHz 30 GHz
28 GHz 30 GHz
-1.0
50 32 GHz 34 GHz 32 GHz 34 GHz
-1.5
36 GHz 38 GHz 36 GHz 38 GHz
0 -2.0
-8 -6 -4 -2 0 2 4 6 8 10 12 14 -8 -6 -4 -2 0 2 4 6 8 10 12 14
Input Power (dBm) Input Power (dBm)

Drain Current vs. Input Power vs. Temp. Gate Current vs. Freq. vs. Temp.
300 2.0
35 GHz
1.5
250
Drain Current (mA)

Gate Current (mA)

1.0
200
0.5

150 0.0

-0.5
100
-1.0
50
-1.5
-40 C +25 C +85 C -40 C +25 C +85 C
0 -2.0
-8 -6 -4 -2 0 2 4 6 8 10 12 14 24 26 28 30 32 34 36 38 40 42
Input Power (dBm) Frequency (GHz)

Drain Current vs. Input Power vs. VD Gate Current vs. Input Power vs. VD
300 2.0
35 GHz 35 GHz
1.5
250
Drain Current (mA)

Gate Current (mA)

1.0
200
0.5

150 0.0

-0.5
100
-1.0
50
-1.5
12 V 20 V 28 V 12 V 20 V 28 V
0 -2.0
-8 -6 -4 -2 0 2 4 6 8 10 12 14 -8 -6 -4 -2 0 2 4 6 8 10 12 14
Input Power (dBm) Input Power (dBm)

Data Sheet Rev. C, November 2022 | Subject to change without notice 13 of 23 www.qorvo.com
© 2022 Qorvo US, Inc. All rights reserved. Confidential
 QPA2225D
28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Performance Plots – Large Signal (Pulsed)

Test conditions, unless otherwise noted: Pulsed VD = 20 V, IDQ = 64 mA, PW = 100 µs, DC = 10%, PIN = +13dBm, TBASE = +25 ºC

Power Gain vs. Freq. vs. Temp. Power Gain vs. Input Power vs. Freq.
20 30
18 28
16 26

Power Gain (dB)

Power Gain (dB)

14 24
12 22
10 20
8 18
6 16 28 GHz 30 GHz
4 14 32 GHz 34 GHz
2 -40 C +25 C +85 C 12 36 GHz 38 GHz
0 10
24 26 28 30 32 34 36 38 40 42 -8 -6 -4 -2 0 2 4 6 8 10 12 14
Frequency (GHz) Input Power (dBm)

Power Gain vs. Freq. vs. VD Power Gain vs. Input Power vs. VD
20 30
35 GHz
18 28
16 26
Power Gain (dB)

Power Gain (dB)

14 24
12 22
10 20
8 18
6 16
4 14
2 12 V 20 V 28 V 12 12 V 20 V 28 V
0 10
24 26 28 30 32 34 36 38 40 42 -8 -6 -4 -2 0 2 4 6 8 10 12 14
Frequency (GHz) Input Power (dBm)

Power Gain vs. Freq. vs. IDQ Power Gain vs. Input Power vs. Temp.
20 30
35 GHz
18 28
16 26
Power Gain (dB)

Power Gain (dB)

14 24
12 22
10 20
8 18
6 16
4 14
2 44 mA 64 mA 84 mA 12
-40 C +25 C +85 C
0 10
24 26 28 30 32 34 36 38 40 42 -8 -6 -4 -2 0 2 4 6 8 10 12 14
Frequency (GHz) Input Power (dBm)

Data Sheet Rev. C, November 2022 | Subject to change without notice 14 of 23 www.qorvo.com
© 2022 Qorvo US, Inc. All rights reserved. Confidential
 QPA2225D
28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Performance Plots – Linearity

Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, FC = 28.5 GHz, Tone Spacing = 100 MHz, TBASE = +25 ºC

IM3 vs. Output Power vs. TBASE IM5 vs. Output Power vs. TBASE
0 -15
Frequency = 28.5 GHz Frequency = 28.5 GHz
-5 -20
-25
-10
-30
-15
IM3 (dBc)

IM5 (dBc)
-35
-20 -40

-25 -45
-50 -40C
-30 -40C
-55
+25C +25C
-35 -60
+85C +85C
-40 -65
8 10 12 14 16 18 20 22 24 26 8 10 12 14 16 18 20 22 24 26
Output Power per Tone (dBm) Output Power per Tone (dBm)

IM3 vs. Output Power vs. VD IM5 vs. Output Power vs. VD
0 -15
Frequency = 28.5 GHz Frequency = 28.5 GHz
-5 -20
-25
-10
-30
-15
IM3 (dBc)

IM5 (dBc)

-35
-20 -40
12 V 12 V
-25 -45
16 V 16 V
-50
-30 20 V 20 V
-55
24 V 24 V
-35 -60
28 V 28 V
-40 -65
8 10 12 14 16 18 20 22 24 26 8 10 12 14 16 18 20 22 24 26
Output Power per Tone (dBm) Output Power per Tone (dBm)

IM3 vs. Output Power vs. IDQ IM5 vs. Output Power vs. IDQ
0 -15
Frequency = 28.5 GHz Frequency = 28.5 GHz
-5 -20
-25
-10
-30
-15
IM3 (dBc)

IM5 (dBc)

-35
-20 -40

-25 -45
-50
-30 44 mA 44 mA
-55
64 mA 64 mA
-35 -60
84 mA 84 mA
-40 -65
8 10 12 14 16 18 20 22 24 26 8 10 12 14 16 18 20 22 24 26
Output Power per Tone (dBm) Output Power per Tone (dBm)

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 QPA2225D
28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Performance Plots – Linearity

Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, FC = 35 GHz, Tone Spacing = 100 MHz, TBASE = +25 ºC

IM3 vs. Output Power vs. TBASE IM5 vs. Output Power vs. TBASE
0 -15
Frequency = 35 GHz Frequency = 35 GHz
-5 -20
-25
-10
-30
-15
IM3 (dBc)

IM5 (dBc)
-35
-20 -40

-25 -45
-50 -40C
-30 -40C
-55
+25C +25C
-35 -60
+85C +85C
-40 -65
8 10 12 14 16 18 20 22 24 26 8 10 12 14 16 18 20 22 24 26
Output Power per Tone (dBm) Output Power per Tone (dBm)

IM3 vs. Output Power vs. VD IM5 vs. Output Power vs. VD
0 -15
Frequency = 35 GHz Frequency = 35 GHz
-5 -20
-25
-10
-30
-15
IM3 (dBc)

IM5 (dBc)

-35
-20 -40
12 V 12 V
-25 -45
16 V 16 V
-50
-30 20 V 20 V
-55
24 V 24 V
-35 -60
28 V 28 V
-40 -65
8 10 12 14 16 18 20 22 24 26 8 10 12 14 16 18 20 22 24 26
Output Power per Tone (dBm) Output Power per Tone (dBm)

IM3 vs. Output Power vs. IDQ IM5 vs. Output Power vs. IDQ
0 -15
Frequency = 35 GHz Frequency = 35 GHz
-5 -20
-25
-10
-30
-15
IM3 (dBc)

IM5 (dBc)

-35
-20 -40

-25 -45
-50
-30 44 mA 44 mA
-55
64 mA 64 mA
-35 -60
84 mA 84 mA
-40 -65
8 10 12 14 16 18 20 22 24 26 8 10 12 14 16 18 20 22 24 26
Output Power per Tone (dBm) Output Power per Tone (dBm)

Data Sheet Rev. C, November 2022 | Subject to change without notice 16 of 23 www.qorvo.com
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 QPA2225D
28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Performance Plots – Linearity

Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, FC = 38 GHz, Tone Spacing = 100 MHz, TBASE = +25 ºC

IM3 vs. Output Power vs. TBASE IM5 vs. Output Power vs. TBASE
0 -15
Frequency = 38 GHz Frequency = 38 GHz
-20
-5
-25
-10
-30
-15

IM5 (dBc)
IM3 (dBc)

-35
-20 -40
-45
-25
-50 -40C
-30 -40C
-55
+25C +25C
-35 -60
+85C +85C
-40 -65
8 10 12 14 16 18 20 22 24 26 8 10 12 14 16 18 20 22 24 26
Output Power per Tone (dBm) Output Power per Tone (dBm)

IM3 vs. Output Power vs. VD IM5 vs. Output Power vs. VD
0 -15
Frequency = 38 GHz Frequency = 38 GHz
-5 -20
-25
-10
-30
-15
IM3 (dBc)

IM5 (dBc)

-35
-20 -40
12 V 12 V
-25 -45
16 V 16 V
-50
-30 20 V 20 V
-55
24 V 24 V
-35 -60
28 V 28 V
-40 -65
8 10 12 14 16 18 20 22 24 26 8 10 12 14 16 18 20 22 24 26
Output Power per Tone (dBm) Output Power per Tone (dBm)

IM3 vs. Output Power vs. IDQ IM5 vs. Output Power vs. IDQ
0 -15
Frequency = 38 GHz Frequency = 38 GHz
-5 -20
-25
-10
-30
-15
IM3 (dBc)

IM5 (dBc)

-35
-20 -40

-25 -45
-50
-30 44 mA 44 mA
-55
64 mA 64 mA
-35 -60
84 mA 84 mA
-40 -65
8 10 12 14 16 18 20 22 24 26 8 10 12 14 16 18 20 22 24 26
Output Power per Tone (dBm) Output Power per Tone (dBm)

Data Sheet Rev. C, November 2022 | Subject to change without notice 17 of 23 www.qorvo.com
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 QPA2225D
28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Thermal and Reliability Information

Parameter Test Conditions Value Units
Thermal Resistance (θJC) (1) Tbase = 85 ºC, VD = 20 V, IDQ = 64 mA, PDISS = 1.28 16.4 ºC/W
Channel Temperature, TCH (No RF) (2) W, No RF (quiescent DC operation) 106 °C

Thermal Resistance (θJC) (1) Tbase = 85 ºC, VD = 20 V, IDQ = 64 mA, Freq = 32 17.3 ºC/W
GHz, ID_Drive = 165 mA, PIN = 13 dBm, POUT = 25.8
Channel Temperature, TCH (Under RF) (2) dBm, PDISS = 2.95 W 136 °C
P = 9.36 W
Thermal Resistance (θJC) (1) Tbase = 85 ºC, VD = 28 V, IDQ = 64 mA, Freq = 32 18.1 ºC/W
GHz, ID_Drive = 158 mA, PIN = 13 dBm, POUT = 25.5
Channel Temperature, TCH (Under RF) (2) dBm, PDISS = 4.1 W 159 ºC
Notes: P = 12.25 W
1. Thermal resistance determined to the back of a 20 mil Cu-Mo carrier plate with eutectic die attach (85 ºC)
2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates

Dissipated Power and Maximum Gate Current

Dissipated Power vs. Freq. vs. VD IG_MAX vs. TCH
5.0 40
TBASE = 85 ºC

4.5 35 Total Ig
Maximum Gate Current (mA)
Dissipated Power (W)

Each Stage Ig
4.0 30

3.5 25

3.0 20

2.5 15

2.0 10

1.5 5
20 V 22 V 24 V 26 V 28 V
1.0 0
26 28 30 32 34 36 38 40 42 110 120 130 140 150 160 170 180
Frequency (GHz) Channel Temperature (°C)
Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, PIN = +13dBm, TBASE = +85 ºC

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 QPA2225D
28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Applications Information

Bias-Up Procedure Bias-Down Procedure

1. Set ID limit to 250 mA, IG limit to 10 mA 1. Turn off RF signal
2. Set VG to −4.0 V 2. Reduce VG to −4.0 V. Ensure IDQ ~ 0 mA
3. Set VD +20 V 4. Set VD to 0 V
4. Adjust VG more positive until IDQ ≈ 64 mA 5. Turn off VD supply
5. Apply RF signal 6. Turn off VG supply

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 QPA2225D
28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Evaluation Board (EVB) Layout Assembly

PCB is made from Rogers 4003C dielectric, 0.008 inch thick, 0.5 oz. copper both sides.

Bill of Materials
Reference Des. Value Description Manuf. Part Number
C1, C3 10 uF CAP, 10 uF, 20%, 50 V, 20%, X5R, 1206 Various

C2, C4 0.01 uF CAP, 0.01 uF, 10%, 50 V, X7R, 0402 Various

R1 5.1 Ω RES, 5.1 OHM, 5%, 50 V, 0402 Various

R2, R3, R4 0Ω RES, 0 OHM, JMPR, 0402 Various

J1, J2 2.4 mm CONNECTOR, FEMALE, ENDLAUNCH Southwest Microwave 1492-04A-5

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Mechanical Information
Bond Pad Description
Pad No. Symbol
1 RF In
2 VG
3 VD
4 RF Out
Data Sheet Rev. C, November 2022 | Subject to change without notice
QPA2225D
28 – 38 GHz 0.4 Watt GaN Driver Amplifier
Dimensions are in mm
Thickness: 0.050
Die x, y size tolerance: ± 0.050
Ground is backside of die
Pad Size (mm) Description
0.087 x 0.188 RF Input; matched to 50 Ω, DC blocked
Gate voltage, bias network is required; see Application Circuit on
0.081 x 0.086
page 19 as an example.
Drain voltage, bias network is required; see Application Circuit on
0.110 x 0.086
page 19 as an example.
0.087 x 0.188 RF Output; matched to 50 Ω, DC blocked
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 QPA2225D
28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Assembly Notes
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.

Reflow process assembly notes:

• Use AuSn (80/20) solder and limit exposure to temperatures above 300 °C to 3 – 4 minutes, maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.

Interconnect process assembly notes:

• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonic are critical parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.

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 QPA2225D
28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Handling Precautions
Parameter Rating Standard Caution!
ESD – Human Body Model (HBM) 1B ANSI/ESD/JEDEC JS-001
ESD-Sensitive Device

Solderability
Use only AuSn (80/20) solder, and limit exposure to temperatures above 300 °C to 3 – 4 minutes, maximum.

RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.

This product also has the following attributes:

• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free

Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com

Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.

Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.

Copyright 2022 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.

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