Si4438DY

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY FEATURES

• Halogen-free According to IEC 61249-2-21
VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.)
Available
0.0027 at VGS = 10 V 36
30 41 nC • TrenchFET® Power MOSFET
0.004 at VGS = 4.5 V 29 • 100 % Rg Tested

APPLICATIONS
• DC-to-DC and AC-to-DC Oring Diode Applications

SO-8
D
S 1 8 D

S 2 7 D

S 3 6 D

G D G
4 5

Top View
S
Ordering Information: Si4438DY-T1-E3 (Lead (Pb)-free)
Si4438DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 36
TC = 70 °C 29
Continuous Drain Current (TJ = 150 °C) ID
TA = 25 °C 24b, c
TA = 70 °C 19b, c A
Pulsed Drain Current IDM 70
TC = 25 °C 7.0
Continuous Source-Drain Diode Current IS
TA = 25 °C 3.0b, c
TC = 25 °C 7.8
TC = 70 °C 5.0
Maximum Power Dissipation PD W
TA = 25 °C 3.5b, c
TA = 70 °C 2.2b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 29 35
°C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 13 16
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.

Document Number: 73581 www.vishay.com

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Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V
VDS Temperature Coefficient ΔVDS/TJ 31
ID = 250 µA mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 6.7
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.4 2.6 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = 30 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C 10
On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 A
VGS = 10 V, ID = 20 A 0.0022 0.0027
Drain-Source On-State Resistancea RDS(on) Ω
VGS = 4.5 V, ID = 15 A 0.0033 0.004
Forward Transconductancea gfs VDS = 15 V, ID = 20 A 86 S
Dynamicb
Input Capacitance Ciss 4645
Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz 900 pF
Reverse Transfer Capacitance Crss 555
VDS = 15 V, VGS = 10 V, ID = 20 A 84 126
Total Gate Charge Qg
41 62
nC
Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 20 A 14.6
Gate-Drain Charge Qgd 16.5
Gate Resistance Rg f = 1 MHz 1.3 2 Ω
Turn-On Delay Time td(on) 36 55
Rise Time tr VDD = 15 V, RL = 1.5 Ω 210 320
Turn-Off Delay Time td(off) ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 39 60
Fall Time tf 18 30
ns
Turn-On Delay Time td(on) 17 26
Rise Time tr VDD = 15 V, RL = 1.5 Ω 86 130
Turn-Off Delay Time td(off) ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 47 75
Fall Time tf 10 16
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS TC = 25 °C 7
A
Pulse Diode Forward Currenta ISM 70
Body Diode Voltage VSD IS = 3 A 0.73 1.1 V
Body Diode Reverse Recovery Time trr 43 65 ns
Body Diode Reverse Recovery Charge Qrr 45 70 nC
IF = 20 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time ta 22
ns
Reverse Recovery Rise Time tb 21
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com Document Number: 73581

2 S09-0228-Rev. B, 09-Feb-09
 Si4438DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60 1.2
VGS = 10 V thru 4 V
50 1.0
ID - Drain Current (A)

ID - Drain Current (A)

40 0.8

30 0.6

25 °C
20 0.4

10 TC = 125 °C
0.2
3V
- 55 °C
0 0.0
0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.004 6200
R DS(on) - On-Resistance (mΩ)

4960 Ciss
VGS = 4.5 V
C - Capacitance (pF)

3720

0.003

2480

Coss
VGS = 10 V 1240

Crss
0.002 0
0 10 20 30 40 50 0 6 12 18 24 30

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current and Gate Voltage Capacitance

10 1.6

ID = 20 A ID = 20 A
VG S - Gate-to-Source Voltage (V)

8 1.4
VDS = 15 V
R DS(on) - On-Resistance

VGS = 10 V
(Normalized)

6 1.2

VGS = 4.5 V

4 1.0

2 0.8

0 0.6
0 17 34 51 68 85 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

Document Number: 73581 www.vishay.com

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Si4438DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100.000 0.30

R DS(on) - Drain-to-Source On-Resistance (Ω)

ID = 20 A

10.000 0.24
IS - Source Current (A)

TJ = 150 °C
1.000 0.18

0.100 0.12

TJ = 25 °C
0.010 0.06 TJ = 125 °C

TJ = 25 °C
0.001 0.00
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

0.5 200

0.2 160

- 0.1
Power (W)
VGS(th) (V)

120

ID = 5 mA
- 0.4 80

ID = 250 µA
- 0.7 40

- 1.0 0
- 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power, Junction-to-Ambient

100

Limited by RDS(on)*

10 1 ms
ID - Drain Current (A)

10 ms

1
100 ms

1s

0.1 10 s

TA = 25 °C DC
Single Pulse

0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient

www.vishay.com Document Number: 73581

4 S09-0228-Rev. B, 09-Feb-09
 Si4438DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

45

36

ID - Drain Current (A)

27 Package Limited

18

0
0 25 50 75 100 125 150

TC - Case Temperature (°C)

Current Derating*

10 2.0

8 1.6

1.2
Power (W)

6
Power (W)

4 0.8

2 0.4

0 0.0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TC - Case Temperature (°C) TA - Ambient Temperature (°C)

Power, Junction-to-Foot Power, Junction-to-Ambient

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

Document Number: 73581 www.vishay.com

S09-0228-Rev. B, 09-Feb-09 5
Si4438DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1
Duty Cycle = 0.5
Normalized Effective Transient

0.2
Thermal Impedance

0.1 Notes:
0.1
PDM
0.05

t1
t2
0.02 t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 80 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-3 10-2 10-1 1 10 100 1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Duty Cycle = 0.5
Normalized Effective Transient

0.2
Thermal Impedance

0.1
0.1
0.05

0.02

Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73581.

www.vishay.com Document Number: 73581

6 S09-0228-Rev. B, 09-Feb-09
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Revision: 08-Feb-17 1 Document Number: 91000