Module 2

║JAI SRI GURUDEV║
Sri AdichunchanagiriShikshana Trust (R)
SJB INSTITUTE OF TECHNOLOGY

BGS Health & Education City, Kengeri , Bangalore – 60 .
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING
Introduction to Electronics
Module – 2
BJT & FET
Dr. Komala.M
Associate Professor,
Dept. of ECE
SJBIT
1
Module-2 (8 Hours)
• Bipolar Junction Transistors:
Introduction, BJT Voltages & Currents, BJT
Amplification, Common Base Characteristics,
Common Emitter Characteristics, Common Collector
Characteristics, BJT Biasing: Introduction, DC Load
line and Bias point (Text 1: 4.2, 4.3, 4.5,4.6, 5.1)
• Field Effect Transistor:

Junction Field Effect Transistor, JFET Characteristics,
MOSFETs: Enhancement MOSFETs, Depletion
Enhancement MOSFETs (Text 1: 9.1,9.2,9.5)
22BEE13/23 Dr.Komala.M
Why it is called BJT
• A junction transistor is simply a sandwich of one
type of semiconductor material (p-type or n-type)
between two layers of the opposite type.
• The centre layer is called the base, one of the outer
layers is termed the emitter, and the other outer
layer is referred to as the collector.
• The emitter, base, and collector are provided with
terminals which are appropriately labelled E, B, and
C.
• Two PN-junctions exist within each transistor: the
collector-base junction and the emitter-base
junction.
Transistor block and symbol representation
Module-2 Dr.Komala.M
Transistor Operation packages
• Low-power transistor : pass currents of 1 mA to
20 mA.
• High power device: Current levels for high-power
transistors range from 100 mA to several amps
Operation of NPN Transistor
Operation of PNP Transistor
Transistor Voltages in
NPN and PNP Transistor
Transistor Current in PNP Transistors
Current in PNP Transistors
Currents in NPN Transistor
Currents in NPN Transistor
General Note
• αdc (alpha dc) is the emitter-to-collector
current gain, or the ratio of collector current
to emitter current.
• αdc = IC /IE.
• αdc is typically 0.96 to 0.995
• αdc is termed the common-base dc current
gain.
General Note
• βdc (beta dc) is the base-to-collector current
gain, or the ratio of collector current to base
current.
• βdc = IC /IB
• βdc ranges from 25 to 300.
• βdc is also termed the common-emitter dc
current gain.
BJT as an Amplifier
• Amplification is the process of linearly

increasing the amplitude of an electrical signal.
• Amplifier circuits have both dc and ac
quantities
DC and AC Quantities:
DC quantities always carry an uppercase (large letter) subscript.
For example
 IB, IC, and IE are the dc transistor currents.
 VBE, VCB, and VCE are the dc voltages from one transistor terminal to another.
 Single subscripted voltages such as VB, VC, and VE are dc voltages from the
transistor terminals to ground.
AC quantities always carry a lowercase (small letter) subscript.

For example,
 Ib, Ic, and Ie are the ac transistor currents.
 Vbe, Vcb, and Vce are the ac voltages from one transistor terminal to another.
 Single subscripted voltages such as Vb, Vc, and Ve are ac voltages from the
transistor terminals to ground.
Current Amplification in Transistor
• A small change in the base current (ΔIB) produces a
large change in collector current (ΔIC) and a large
emitter current change (ΔIE).
• The increasing and decreasing levels of input and
output currents may be defined as alternating
quantities.
Bipolar Transistor Configurations
Bipolar Transistor is a three terminal device, there are
basically three possible ways to connect it within an electronic
circuit with one terminal being common to both the input and
output signals.
Common Base Configuration

Common Emitter Configuration
Common Collector Configuration
Common Base (CB) Configuration
• A pnp transistor with its base terminal common
to both the input (EB) voltage and the output
(CB) voltage.
DC Load Line of BJT Biasing Circuit
• The DC Load Line of BJT Biasing Circuit is a straight line drawn
on the transistor output characteristics.
• For a common-emitter (CE) circuit, the load line is a graph of
collector current (IC) versus collector-emitter voltage (VCE)
DC Bias Point (Q-Point):
• The dc bias point, or quiescent point (Q-point) defines the dc
conditions in the circuit. It identifies the transistor collector
current and collector-emitter voltage when there is no input
signal at the base terminal.
• When a signal is applied to the transistor base, IB varies
according to the instantaneous amplitude of the signal. This
causes IC to vary, and consequently produces a variation in VCE.
Module- 2
Part- B
Field Effect Transistor
Junction Field Effect Transistor, JFET
Characteristics, MOSFETs: Enhancement
MOSFETs, Depletion Enhancement
MOSFETs (Text 1: 9.1,9.2,9.5)
22BEE13/23
Copyright ©2009 by Pearson Education, Inc.Electronic Devices and Circuit Theory, 10/e
Dr.Komala.M
Upper Saddle River, New Jersey 07458 • All rights reserved.Robert L. Boylestad and Louis Nashelsky
Basics of FET
A Field Effect Transistor is a voltage operated device that can be used in amplifiers and
switching circuits.
• The field-effect transistor (FET) is a type of transistor that uses an electric field to control
the flow of current in a semiconductor.
• FETs are devices with three terminals: source, gate, and drain.
• FETs control the flow of current by the application of a voltage to the gate, which in turn
alters the conductivity between the drain and source.
• FETs are also known as unipolar transistors since they involve single-carrier-type
operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge
carriers in their operation, but not both.
 Two major categories of FET

JFET and MOSFET
 They are subdivided into
p-channel and n-channel
22BEE13/23
Dr.Komala.M
22BEE13/23
Dr.Komala.M
FETs vs. BJTs
Similarities:
• Amplifiers
• Switching devices
• Impedance matching circuits
Differences:
• FETs are voltage controlled devices. BJTs are current controlled
devices.
• FETs have a higher input impedance. BJTs have higher gains.
• FETs are less sensitive to temperature variations and are more easily
integrated on ICs.
• FETs are generally more static sensitive than BJTs.
Dr. Komala.M , Dept of ECE

Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
4 Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Classification of FET
22BEE13/23
Electronic Devices and Circuit Theory, 10/e
Dr.Komala.M
Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
FET Types
• JFET: Junction FET
• Two types 1. N- channel JFET
2. P –channel JFET

Copyright ©2009 by Pearson Education, I n c .E l e c t r o n i c Devices and Circuit Theory, 10/e
rights r e s e r v e d .R o b e r t L. Boylestad and Louis Nashelsky
6 Upper Saddle River, New Jersey 07458 • All
JFET Construction
There are two types of JFETs
• n-channel
• p-channel
The n-channel is more widely used.
There are three terminals:
• Drain (D) and Source (S) are connected to the n-channel

• Gate (G) is connected to the p-type material

JFET Operation: The Basic Idea
JFET operation can be compared to a water spigot.
The source of water pressure is the

accumulation of electrons at the
negative pole of the drain-source
voltage.
The drain of water is the electron

deficiency (or holes) at the positive pole
of the applied voltage.
The control of flow of water is the gate

voltage that controls the width of the n-
channel and, therefore, the flow of
charges from source to drain.

JFET Operating Characteristics
There are three basic operating conditions for a JFET:
• VGS = 0, VDS increasing to some positive value

• VGS < 0, VDS at some positive value
• Voltage-controlled resistor

JFET Operating Characteristics: VGS = 0 V
Three things happen when VGS = 0 and VDS is increased from 0 to a more positive
voltage
• The depletion region between p-gate

and n-channel increases as electrons
from n-channel combine with holes
from p-gate.
• Increasing the depletion region,

decreases the size of the n-channel
which increases the resistance of the
n-channel.
• Even though the n-channel resistance

is increasing, the current (ID) from
source to drain through the n-
channel is increasing. This is because
VDS is increasing.

JFET Operating Characteristics: Pinch Off
If VGS = 0 and VDS is further increased to

a more positive voltage, then the
depletion zone gets so large that it
pinches off the n-channel.
This suggests that the current in the n-

channel (ID) would drop to 0A, but it
does just the opposite–as VDS increases,
so does ID.

JFET Operating Characteristics: Saturation
At the pinch-off point:
• Any further increase in VGS does not

produce any increase in ID. VGS at
pinch-off is denoted as Vp.
• ID is at saturation or maximum. It is
referred to as IDSS.
• The ohmic value of the channel is

maximum.

As VGS becomes more negative, the

depletion region increases.

As VGS becomes more negative:
• The JFET experiences pinch-off

at a lower voltage (VP).
• ID decreases (ID < IDSS) even

though VDS is increased.
• Eventually ID reaches 0 A. VGS at

this point is called Vp or VGS(off)..
Also note that at high levels of VDS the JFET reaches a breakdown situation. ID
increases uncontrollably if VDS > VDSmax.

JFET Operating Characteristics:
Voltage-Controlled Resistor
The region to the left of the

pinch-off point is called the
ohmic region.
The JFET can be used as a

variable resistor, where VGS
controls the drain-source
resistance (rd). As VGS becomes
more negative, the resistance
(rd) increases.
ro
rd 
 VGS
2
1  
 VP 

p-Channel JFETS
The p-channel JFET behaves the

same as the n-channel JFET,
except the voltage polarities and
current directions are reversed.

p-Channel JFET Characteristics
As VGS increases more positively
• The depletion zone

increases
• ID decreases (ID < IDSS)
• Eventually ID = 0 A
Also note that at high levels of VDS the JFET reaches a breakdown situation: ID
increases uncontrollably if VDS > VDSmax.

N-Channel JFET Symbol

JFET Transfer Characteristics
The transfer characteristic of input-to-output is not as straightforward in

a JFET as it is in a BJT.
In a BJT,  indicates the relationship between IB (input) and IC (output).
In a JFET, the relationship of VGS (input) and ID (output) is a little more

complicated:
 V 2
 
ID  I DSS  1 GS 
 VP 

JFET Transfer Curve
This graph shows th e

value of ID for a
given value of VGS.

MOSFETs
.
 MOSFET is an acronym for Metal Oxide Semiconductor Field

Effect Transistor. It is a type of FET (Field Effect Transistor) that
has an insulated metal oxide layer between its gate and channel.
 There are two types of MOSFETs:
• Depletion-Type
• Enhancement-Type
 Both of these MOSFET’s are widely used in electronics,

integrated and embedded circuits.
 The MOSFET conducts current between the source and drain.
The path for current between the source and drain is called a
channel. The width of this channel is controlled by the voltage at
the gate terminal.

D- MOSFET (Depletion MOSFET)
 Depletion MOSFET or D-MOSFET is a type of MOSFET where
the channel is constructed during the process of
manufacturing.
 Therefore, the D-MOSFET can conduct between its drain and
gate when the VGS = 0 volts.
 Therefore, D-MOSFET is also known as normally ON
transistor.

Types of Depletion MOSFETs

Working of Depletion MOSFET( N-channel)
• In N-channel D-MOSFET, the source, drain and channel are made during
the manufacturing from N-type material upon a P-substrate. The channel
contains electrons as charge carriers. There is a metal oxide insulating layer
between the gate electrode and the channel or P-substrate.
When the gate is connected in reverse bias i.e. negative voltage is

applied, the holes from the P-substrate will attract towards the gate
depleting it of the electrons and reduce the channel size. At a
certain –Vth, the MOSFET will stop conduction. Therefore, N-
channel D-MOSFET has a negative threshold voltage

Working of Depletion MOSFET( P-channel)
• In P-channel D-MOSFET, The source, drain, and channel is made up of P-
type material upon an N-type substrate. P-channel has holes as the charge
carrier.
• Therefore, to reduce the channel width or to attract electrons from the N-
substrate, P-channel MOSFET is applied with positive gate voltage VGS.
When positive gate voltage VGS isn applied to P channel D MOSFET

the positive voltage attracts the electrons from the substrate to deplete
the channel of holes, thus eliminating the channel as well as the
current flow. Therefore, the P-channel D-MOSFET has a positive
threshold voltage.
Basic MOSFET Operation
A depletion-type MOSFET can operate in two
modes:
• Depletion mode
• Enhancement mode
• When VGS = 0 V, ID = IDSS
• When VGS < 0 V, ID < IDSS

D-Type MOSFET in Depletion Mode
Depletion Mode
The characteristics are

similar to a JFET.
• When VGS = 0 V, ID = IDSS
• When VGS < 0 V, ID < IDSS

E-MOSFET “Enhancement MOSFET”
 Enhancement MOSFET or E-MOSFET is a type of MOSFET
where there is no channel constructed during its fabrication but
it is induced in the substrate using the gate voltage.
 The E-MOSFET does not conduct when there is no gate
voltage i.e. VGS= 0v.
 Therefore, E-MOSFET is also known as normally OFF
transistor.

Types of Enhancement MOSFET

Working of E- MOSFET
By applying a voltage to the gate, charge carriers are induced in the
substrate that produces a channel for the conduction of current
between the source and drain.
N-channel and P-channel MOSFET has the same operation as the Depletion type
MOSFET except there is no channel, to begin with; instead, the gate voltage is
used to inject the charge carriers in the substrate to induce a channel between
the source and drain.
The gate is connected in forward bias to induce the charge carriers in the
channel. Once the channel is induced, the current starts to flow between the
source and drain.
Differences between Depletion MOSFET and Enhancement MOSFET

Basic Operation of the E-Type MOSFET
The enhancement-type MOSFET operates only in the enhancement mode.

• VGS is always positive
• As VGS increases, ID
increases
• As VGS is kept constant

and VDS is increased,
then ID saturates (IDSS)
and the saturation level,
VDSsat is reached

p-Channel E-Type MOSFETs
The p-channel enhancement-type MOSFET is similar to the n-

channel, except that the voltage polarities and current directions
are reversed.

MOSFET Symbols


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║JAI SRI GURUDEV║

Sri AdichunchanagiriShikshana Trust (R)

SJB INSTITUTE OF TECHNOLOGY

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

• Field Effect Transistor:

• Amplification is the process of linearly

AC quantities always carry a lowercase (small letter) subscript.

Common Base Configuration

 Two major categories of FET

Dr. Komala.M , Dept of ECE

Dr. Komala.M , Dept of ECE

The n-channel is more widely used.

There are three terminals:

• Drain (D) and Source (S) are connected to the n-channel

Dr. Komala.M , Dept of ECE

The source of water pressure is the

The drain of water is the electron

The control of flow of water is the gate

Dr. Komala.M , Dept of ECE

There are three basic operating conditions for a JFET:

• VGS = 0, VDS increasing to some positive value

Dr. Komala.M , Dept of ECE

• The depletion region between p-gate

• Increasing the depletion region,

• Even though the n-channel resistance

Dr. Komala.M , Dept of ECE

If VGS = 0 and VDS is further increased to

This suggests that the current in the n-

Dr. Komala.M , Dept of ECE

At the pinch-off point:

• Any further increase in VGS does not

• The ohmic value of the channel is

Dr. Komala.M , Dept of ECE

As VGS becomes more negative, the

Dr. Komala.M , Dept of ECE

As VGS becomes more negative:

• The JFET experiences pinch-off

• ID decreases (ID < IDSS) even

• Eventually ID reaches 0 A. VGS at

Dr. Komala.M , Dept of ECE

The region to the left of the

The JFET can be used as a

Dr. Komala.M , Dept of ECE

The p-channel JFET behaves the

Dr. Komala.M , Dept of ECE

As VGS increases more positively

• The depletion zone

Dr. Komala.M , Dept of ECE

Dr. Komala.M , Dept of ECE

The transfer characteristic of input-to-output is not as straightforward in

In a BJT,  indicates the relationship between IB (input) and IC (output).

In a JFET, the relationship of VGS (input) and ID (output) is a little more

Dr. Komala.M , Dept of ECE

This graph shows th e

Dr. Komala.M , Dept of ECE

 MOSFET is an acronym for Metal Oxide Semiconductor Field

 Both of these MOSFET’s are widely used in electronics,

Dr. Komala.M , Dept of ECE

Dr. Komala.M , Dept of ECE

Dr. Komala.M , Dept of ECE

When the gate is connected in reverse bias i.e. negative voltage is

Dr. Komala.M , Dept of ECE

When positive gate voltage VGS isn applied to P channel D MOSFET