Example 1: An abrupt Si p-n junction has 𝑁𝐴 = 2 × 1019 𝑐𝑚−3 on one

side and 𝑁𝐷 = 5 × 1016 𝑐𝑚−3on the other.

(a) Calculate the fermi level position at 300 K in the p and n
regions.
(b) Draw an equilibrium band diagram for the junction and
determine the contact potential 𝑉𝑜 from the diagram.
(c) The junction described in above has a circular cross section
with a diameter of 10𝜇𝑚 .calculate
 𝑋𝑃, 𝑎𝑛𝑑 𝑋𝑛, .
 𝑄+ and Q- for this junction at equilibrium.
 𝑀𝑎𝑥𝑖𝑚𝑢𝑚 𝑒𝑙𝑒𝑐𝑡𝑟𝑖𝑐 𝑓𝑖𝑒𝑙𝑑, 𝐸(𝑥)
Solution
𝑁𝐴 = 2 × 1019 𝑐𝑚−3
𝑁𝐷 = 5 × 1016 𝑐𝑚−3
𝑁𝐴
I. Eip---Ef = KT In ( )
𝑛𝑖
𝑁𝐷
Ef---En = KT In ( )
𝑛𝑖

(b)

p-n junction Diagram.

𝐾𝑇 𝑁𝐴.𝑁𝐷
𝑉𝑏𝑖 = 𝑉𝑜 = ln
𝑞 𝑛𝑖 2
(c) Ф = 10µm = 10 × 10−6 m.
𝐴 = 𝜋𝑟 2
A = (10× 10−6 )𝜋
2Ɛ𝑉𝑜 1 1
W=[ ( + )]
𝑞 𝑁𝐴 +𝑁𝐷 𝑁𝐷

Ɛ = Ɛ𝑆 . Ɛ𝑂
Q+ = Q- = q𝐴𝑁𝐷 𝑋𝑛𝑜
𝑊
𝑋𝑃 =
𝑁
1+ 𝐴
𝑁𝐷
𝑤
𝑋𝑛 =
𝑁
1+ 𝐷
𝑁𝐴
𝒒𝑵𝑫 𝑿𝒏
E(x) =
Ɛ𝒔 Ɛ𝒐

EXAMPLE 2 A piece of p -type silicon with a cross section of 1mm ×

1𝑚𝑚 𝑎𝑛𝑑 𝑙𝑒𝑛𝑔𝑡ℎ 𝑜𝑓 10𝑚𝑚 ℎ𝑎𝑠 𝑎 𝑟𝑒𝑠𝑖𝑠𝑡𝑖𝑣𝑖𝑡𝑦 𝑜𝑓 10−3 𝛺𝑚 𝑎𝑡 27°𝐶 .
Ohmic contact are fabricated on the surfaces at either end of the
longest dimension of the bar and a DC voltage of 10V IS applied.
Assuming a hole mobility µn = 0.03𝑚−2 /v-s, calculate:
 (a) The impurity concentration.
(b) The velocity of the carriers through the bar.
(c) The time taken for carriers to transverse across the bar.
(d) The magnitude of the current in bar.

Solution
A = 1mm× 1𝑚𝑚.
ρ =10−3 Ω m at 27°C.
L =10mm
µn = 0.03𝑚−2 /vs
Ф= 10V
10
(a) E = = 1000 𝑉 ⁄𝑚
10×10−3
1 1
Б= = = 103 ℧⁄𝑚
𝜌 10−3

Б = q. p.µ.
Б = (1.602× 10−19 )p× 0.03
103
P=( = 2.0807 × 1023
1.602×10−19)×0.03

(b) V = µ𝑛 × Ɛ
V = 0.03× 1000 = 30m/s
𝑆 𝑙 10×10−3
(c) V = = = = 3.33 × 10−4 𝐴⁄𝑐𝑚2
𝑟 𝑣 30

(d) I = 𝐽𝑑𝑟𝑓𝑡𝑝 × 𝐴
 𝐽𝑑𝑟𝑓𝑡𝑝 = б . 𝐸
J = 10 × 103 × 1000
J = 1M𝐴⁄𝑚2

A = 1mm× 1𝑚𝑚 = 1 × 10−6 𝑚2

I = 𝐽𝑑𝑟𝑓𝑡𝑝 × A = 1× 106 × 1 × 10−6 = 1A

Example 3: The phosphorous concentration in a region of a silicon

crystal varies linearly from a concentration of 𝑁𝑜 = 1014 𝑐𝑚−3 at x =
0mm to a concentration of 𝑁1 = 1017 𝑐𝑚−3 at x = 1 mm. The diffusion
2
coefficient for electron is 𝐷𝑛 = 22.5 𝑐𝑚 ⁄𝑠 , 𝑡ℎ𝑒 diffusion coefficient
2
for holes is 𝐷𝑝 = 5.2 𝑐𝑚 ⁄𝑠 , and the temperature is 300K. What is
diffusion current density in the positive x-direction?
(hint determine the equivalent values holes for𝑁0 𝑎𝑛𝑑 𝑁1 )
Solution
𝑁0 = 1014 𝑐𝑚−3
𝑋0 = 0𝑚𝑚
𝑁1 = 1017𝑐𝑚−3
𝑋1 = 1𝑚𝑚
𝐷𝑛 = 22.5𝑐𝑚2 /𝑠.
𝐷𝑝 = 5.2𝑐𝑚2 /𝑠.
𝐽𝑑𝑟𝑓𝑡 = ?
𝑑𝑝 𝑑𝑛
𝐽𝑑𝑟𝑓𝑡 = 𝑞 𝐷𝑃 + 𝑞𝐷𝑛 .
𝑑𝑥 𝑑𝑥
𝑑𝑛 𝑛1 − 𝑛0
=
𝑑𝑥 𝑥1 − 𝑥0
𝑑𝑝 𝑛1 − 𝑛𝑜
=
𝑑𝑥 𝑥1 − 𝑥0
𝑛2 𝑖
𝑛𝑜 𝑝𝑜 = 𝑛2 𝑖 = 𝑝𝑜 =
𝑛0

2 𝑛2 𝑖
𝑛1 𝑝1 = 𝑛 𝑖 =
𝑛1

(1.5×1010)2
𝑝0 = = 2.25× 106or 2.25M eV
1014
(1.5×1010)2
𝑃𝐼 = = 2250 𝑒𝑉
1017

𝑑𝑝 2.25 × 106 − 0
= = 2.25 × 1011 𝑒𝑉
𝑑𝑥 1× 10−5 −0
𝑑𝑛 1017−1014
= = 9.99 × 1021 𝑒𝑉
𝑑𝑥 1×10−5−0

𝐽𝑑𝑟𝑓𝑡 = (1.602 × 10−19 × 5.2 × 2.251011 ) + (1.60210−19 ×

9.991021 ) = 37.987 × 103
𝐽𝑑𝑟𝑓𝑡 = 37.987𝐾 𝐴⁄𝑐𝑚2

Example 4: A two terminal Si MIS structure has a substrate doping of

2× 1017 𝑐𝑚−3 (n-type).
(a) Calculate the flat band voltage, 𝑉𝐹𝐵 of the structure if it
employs A1 gate of electron affinity, 𝑋𝑚 = 4.01 𝑒𝑉 .
(b) Draw the band diagram.
(c) What type of contact will be formed?
 (Assume that there is no charge in the oxide, electron affinity
of Si,𝑋𝑠𝑖 = 4.05𝑒𝑉 ,and 𝐸𝑔 (𝑆𝑖 ) = 1.12𝑒𝑉 )

Solution

𝑁𝐷 = 2 × 1017

n-type
𝑉𝐹𝐵 = Ф𝑚 − Ф𝑠
vfB

𝐸𝑔
Ф𝑠 = 𝑥 + − 𝑞𝑉𝑛
2
Ф𝑀 > Ф𝑆 𝑖𝑓 𝑛 − 𝑡𝑦𝑝𝑒 𝑟𝑒𝑐𝑡𝑖𝑓𝑒𝑟𝑖𝑛𝑔
Ф𝑚 < Ф𝑆 𝑂ℎ𝑚𝑖𝑐
𝑁𝐷
𝑞𝑉𝑛 = 𝐾𝑇 𝐼𝑛( )
𝑛𝑖
Example 5: A nMOS device with L = 5µm, 100µm, mobility µ = 1×
103 𝑐𝑚2 /𝑉 s and gate oxide capacitance of 3.48× 10−8 𝐹/𝑐𝑚2 is made
on p-type substrate doped to 1016 𝑐𝑚−3 . The saturation trans
conductance measured at𝑉𝑔𝑠 = 3𝑉 produced 1.50Ms.
(a) Draw the schematic diagram of the device.
(b) Estimate the threshold voltage of the device.
(c) If 𝑉𝑔𝑠 = 𝑉𝑑𝑠 = 5𝑉 𝑖𝑠 𝑎𝑝𝑝𝑙𝑖𝑒𝑑 , 𝑤ℎ𝑎𝑡 𝑤𝑜𝑢𝑙𝑑 𝑏𝑒 the source drain
current if the device is operated in the linear region?’
(d) An nMOS is biased to conduct at 𝑉𝑑𝑠 = 5𝑉 𝑎𝑛𝑑 𝑉𝑔𝑠 = −2𝑉.

Solution
L = 5µm W = 100µm
L = 5× 10−6 W = 100× 10−6
L = 5× 10−4 𝑐𝑚 W = 100× 10−4 cm.
Cox = 3.48× 10−8 F/𝑐𝑚2
𝑁𝐷 = 1016𝑐𝑚−3
𝑔𝑚 = 1.5𝑚𝑆 𝑎𝑡 𝑉𝑔𝑠 = 3𝑉.
(𝑎 )
D S G D
G
S

(b) we know 𝑔𝑚 = 1.5𝑚𝑆 𝑎𝑡 𝑉𝑔𝑠 = 3𝑉 so we can use

𝑤µ𝐶𝑜𝑥
𝑔𝑚 = 𝑘[𝑉𝑔𝑠 − 𝑉𝑡ℎ ] where k =
𝐿
(100×10−4)(1×103)(3.48×10−8)
K=
5×10−4
−4
K = 6.96× 10 .

1.5× 10−3 = 6.96 × 10−4 (3 − 𝑉𝑇𝐻 ).

1.5 × 10−3
𝑉𝑇𝐻 = 3 −
6.96 × 10−4
 𝑉𝑇𝐻 = 0.845 𝑉.
(C) 𝑉𝑔𝑠 = 𝑉𝐷𝑠 = 5𝑉.
𝑉2 𝐷𝑠
In linear region 𝐼𝐷𝑠 = 𝑘 (𝑉𝐷𝑠 (𝑉𝑔𝑠 − 𝑉𝑡 ) − ).
2
−4 ( 52
𝐼𝐷𝑠 = 6.96 × 10 5(5 − 0.845) − ).
2
𝐼𝐷𝑠 = 5.76 × 10−3 𝐴.
𝐼𝐷𝑠 = 5.76𝑚𝐴.

(d) depletion type .

Note.
nMOSfets .
cut off: 𝑉𝑔𝑠 < 𝑉𝑡 𝐼𝑑𝑠 = 0.
ohmic =𝑉𝑔𝑠 > 𝑉𝑡 .
𝑉𝑑𝑠 ≤ 𝑉𝑔𝑠 − 𝑉𝑡 .
𝑉2 𝑑𝑠
𝐼𝐷𝑠 = 𝑘 ( 𝑉𝑑𝑠 (𝑉𝑔𝑠 − 𝑉𝑡 ) − ).
2

Active mode 𝑉𝑔𝑠 > 𝑉𝑡 .

𝑉𝑑𝑠 > 𝑉𝑔𝑠 − 𝑉𝑡 .
𝐼𝑑𝑠 = 𝑘(𝑉𝑔𝑠 − 𝑉𝑡 )2 .
Example 6: For an n-channel MOSFET with a gate oxide thickness of
10mm,𝑉𝑇 = 0.6𝑉, 𝑍 = 25µ𝑚, 𝐿 = 1µ𝑚. 𝐶𝑎𝑙𝑐𝑢𝑙𝑎𝑡𝑒 𝑡ℎ𝑒 𝑑𝑟𝑎𝑖𝑛 current
at𝑉𝐺 = 5𝑉 𝑎𝑛𝑑 𝑉𝐷 = 0.1𝑉. 𝑅𝑒𝑝𝑒𝑎𝑡 𝑓𝑜𝑟 𝑉𝐺 = 3𝑉 𝑎𝑛𝑑 𝑉𝐷 = 5𝑉. Discuss
what happen for 𝑉𝐷 = 7𝑉. 𝐴𝑠𝑠𝑢𝑚𝑒 𝑎𝑛 𝑒𝑙𝑒𝑐𝑡𝑟𝑜𝑛 𝑐ℎ𝑎𝑛𝑛𝑒𝑙 𝑚𝑜𝑏𝑖𝑙𝑖𝑡𝑦 𝑜𝑓
𝜇𝑛 = 200𝑐𝑚2 /𝑉 − 𝑆.
Solution
𝐸𝑖 (3.9)(8.85 × 10−14 )
𝐶𝑖 = = = 3.45 × 10−7 𝐹/𝑐𝑚2
𝑑 10−6
For 𝑉𝐺 = 5𝑉 𝑎𝑛𝑑 𝑉𝐷 = 0.1𝑉, 𝑎𝑛𝑑 𝑉𝑇 = 0.6𝑉, 𝑉𝐷 < (𝑉𝐺 − 𝑉𝑇 )𝑤𝑒 are in
the linear region. Thus.
𝑍 1
𝐼𝐷 = 𝜇𝑛 𝐶𝑖 [(𝑉𝐺 − 𝑉𝑇 )𝑉𝐷 − 𝑉 2 𝐷 ]
𝐿 2
25 1
= (200)(3.45 × 10−7 ) [(5 − 0.6) × 0.1 − (0.1)2 ] = 7.51 × 10−4 𝐴
1 2

For 𝑉𝐺 = 3𝑉 𝑎𝑛𝑑 𝑉𝐷 (𝑠𝑎𝑡), 𝑉𝑇 = (𝑉𝐺 − 𝑉𝑇 )= 3-0.6 = 2.4v

𝑍 1
𝐼𝐷 = 𝜇𝑛 𝐶𝑖 [(𝑉𝐺 − 𝑉𝑇 )𝑉𝐷 (𝑠𝑎𝑡) − 𝑉 2 𝐷 (𝑠𝑎𝑡)]
𝐿 2
25 1
= (200)(3.45 × 10−7 ) [(2.4)2 − (2.4)2 ] = 4.97 × 10−3 𝐴.For 𝑉𝐷 =
1 2
7𝑉, 𝐼𝐷 𝑤𝑖𝑙𝑙 𝑛𝑜𝑡 𝑖𝑛𝑐𝑟𝑒𝑎𝑠𝑒, 𝑏𝑒𝑐𝑎𝑢𝑠𝑒 𝑤𝑒 𝑎𝑟𝑒 𝑖𝑛 𝑡ℎ𝑒 𝑠𝑎𝑡𝑢𝑟𝑎𝑡𝑖𝑜𝑛 𝑟𝑒𝑔𝑖𝑜𝑛.

Example 7: An n-polysilicon-gate n-channel MOS transistor is made on a

p-type Si substrate with 𝑁𝑎 = 5 × 1015𝑐𝑚−3 . The Si𝑂2 thickness is 100A
in the gate region, and the effective interface charge 𝑄𝑖 𝑖𝑠 4×
1010Qc/𝑐𝑚2 . Find 𝐶𝑖 𝑎𝑛𝑑 𝐶𝑚𝑚 𝑜𝑛 𝑡ℎ𝑒 𝐶 − 𝑉 𝑐ℎ𝑎𝑟𝑎𝑐𝑡𝑒𝑟𝑖𝑠𝑡𝑖𝑐𝑠 and find
𝑊𝑚 , 𝑉𝐹𝐵 , 𝑎𝑛𝑑 𝑉𝑇
Solution
𝐾𝑇 𝑁𝑎 5 × 1015
Ф𝐹 = 𝑙𝑛 = 0.0259𝑙𝑛 = 0.329𝑒𝑉.
𝑞 𝑛𝑖 1.5 × 1010
∈ 𝑆 Ф𝐹 1 11.8×8.85×10−14×0.329 1
𝑊𝑚 = 2[ ] = 2[
2 ]2 = 4.15 × 10−5 = 0.415µ𝑚.
𝑞 𝑁𝑎 1.6×10−19 ×5×1015

From Fig.6-17,Ф𝑚𝑠 ≈ −0.95𝑉, 𝑎𝑛𝑑 𝑤𝑒 ℎ𝑎𝑣𝑒

𝑄𝑖 = 4 × 1010 × 1.6 × 10−19 = 6.4 × 10−9 𝐶/𝑐𝑚2 .
∈𝑖 3.9 × 8.85 × 10−14
𝐶𝑖 = = = 3.45 × 10−7 𝐹/𝑐𝑚2
𝑑 0.1 × 10−5
 𝑄𝑖
𝑉𝐹𝐵 = Ф𝑚𝑠 − = −0.95 − 6.4 × 10−9 /3.45 × 10−7 = −0.969𝑉.
𝐶𝑖
𝑄𝑑 = −𝑞𝑁𝑑 𝑊𝑚 = −1.6 × 10−19 × 5 × 1015 × 4.15 × 10−5
= −3.32 × 10−8 𝐶/𝑐𝑚2
𝑄𝑑 3.32×10−8
𝑉𝑇 = 𝑉𝐹𝐵 + + 2Ф𝐹 = −0.969 + + 0.658 = −0.215𝑉
𝐶𝑖 3.45×10−7

∈𝑠 11.8×8.85×10−14
𝐶𝑑 = = = 2.5 × 10−8 𝐹/𝑐𝑚
𝑊𝑚 4.15×10−5

𝐶𝑖 𝐶𝑑 3.45 × 10−7 × 2.5 × 10−8

𝐶𝑚𝑖𝑛 = = = 2.33 × 10−8 𝐹/𝑐𝑚2
𝐶𝑖 + 𝐶𝑑 3.45 × 10−7 + 2.5 × 10−8
In the emitter.
𝐷𝑛 = 700(0.0259) = 18.13
1
−7 2
𝐿𝑛 = (18.13 × 10 ) = 1.35 × 10−3
𝑞𝐴𝐷 𝐸 𝑛
𝐼𝐸𝑛 = 𝑛𝐸 𝑝𝑒 𝑞𝑉𝐸𝐵 /𝐾𝑇
𝐿𝐸 𝑛

𝑞𝐴𝐷 𝐵 𝑝 𝑊𝑏
𝐼𝐸𝑝 = 𝑝𝐵 𝑛 𝑐𝑡𝑛ℎ 𝑒𝑞𝑉𝐸𝐵 /𝐾𝑇
𝐿𝐵 𝑝 𝐿𝐵 𝑃

𝐿𝐸𝑝 𝐿𝐸𝑛
𝛾= = [1 + ]−1
𝐿𝐸𝑛 + 𝐿𝐸𝑝 𝐿𝐸𝑝
𝐷𝐸 𝑛
𝐿𝐸 𝑛 𝑛𝐸 𝑝 𝑊𝑏 −1 𝑛𝐸 𝑝 𝑛𝐵 𝑛
=[1 + 𝐷𝐵 𝑝
𝑡𝑎𝑛ℎ ] (𝑢𝑠𝑒 = )
𝐿𝑝 𝑝𝐵 𝑛 𝑝𝐸 𝑝
𝐿𝐵 𝑝 𝑝𝐵 𝑛

18.13×1.08×10−2×1015
𝛾=[1 + 𝑡𝑎𝑛ℎ9.26 × 10−3 ]−1 = 0.99885
11.66×1.35×10−3×1017
𝑊𝑏
B= 𝑠𝑒𝑐ℎ = 𝑠𝑒𝑐ℎ9.26 × 10−3 = 0.99996
𝐿𝑝
𝛼 = 𝛽 = (0.99885)(0.99996) = 0.9988.
𝛼 0.9988
𝛽= = = 832.
1−𝛼 0.0012