Semiconductor Electronics: ANALOG SIGNAL DIGITAL SIGNAL

Classification of metals.Insulator And Semiconductor +

Material Devices and simple circuit

Voltage amplitude

Voltage amplitude
TRANSISTOR Level 1

Transistor is a three t
Time
terminal device Level 0

(1) Emitter (E)

t
(2) Base (B)
ON THE BASIS OF Time
(3) Collector (C)
CONDUCTIVITY SEMICONDUCTOR AND ITS TYPES BASIC LOGIC GATES
A
(1) For metals: Semiconductors exhibit electrical
Y =A+B
PNP B OR gate
conductivity between conductors APPLICATIONS OF JUNCTION DIVIDE E C
S ∼ 10-2 – 10-8 Ω m P N P
n
A

σ ∼ 102 - 108 S/m and non – Conductors. p E C

B
Y
AND gate

B B

Voltage at A
A
Y
They have high conduc�vity. NAND gate
B
+ INPUT ac

(2) For Semiconductors: INTRINSIC SEMICONDUCTORS S1 + A t NPN

A Y
D

Voltage across RL
P – n junction diode
NOT gate
E C
S ∼ 10 – 10 Ω m
-5 6 (1) Pure Semiconductors are intrinsic RL N P N A
OUTPUT VOLTAGE E C Y =A+B
semiconductors.
σ ∼ 105 – 10-6 S/m P – n junction diode is the S2 B B B B
(2) ni= ne = nr, Where, ne = no. of –
They have intermediate free electrons, nh = no. of hales, Combination of P – type and For positive half cycle
WORKING OF N – P – N TRANSISTOR

Waveform at A
conductivity to metals ni = intrinsic carrier Concentration n – type semiconductor. D2
t

and insulators. (3) Examples:- Ge, Si P – region has mobile majority + (i)
emitter-base
juction
Collector-base
juction
IB E C IC
S1
holes and immobile – ve ions. N P N

Output Waveform Waveform at B

B A
(3) For insulators: – +
t IE e– o
IC
n – region has mobile majority RL (ii)
h B
S2 (b)
S ∼ 1011 – 1019 Ω m EXTRINSIC SEMICONDUCTORS free electrons and immobile –

(across RL)
Due to Due to Due to Due to

D2
D1 D2 D1 D2 mA E B C mA
VEE IB
IB VCC
σ ∼ 10 -11
– 10 -19
S/m (1) Impure or doped semiconductors Positively charged ions. For positive half cycle t VEE VCC
– + – + + – + – +
They have low conduc�vity are said to be extrinsic
semiconductors POTENTIAL BARRIES CE CONFIGURATION
σ = electrical conduc�vity
(2) Impurities are added to improve SEMICONDUCTOR CHARACTERISTION I C

ρ = resis�vity Conductivity Potential barrier is the potential

ZENERDIONDE DIODES – +
difference developed across ZENER BREAKDOWN IB
mA
B C
depletion region. This phenomenon takes place in Anode(A) Cathode(K) R2

E VCE

The band which is n – type Semiconductor VB = 0.7 for silicon (1) p – n junction having ‘ high
R1

VBE
IE
VCC

ne >> nh = 0.3 for germanium doping’ Zener Diode

Completely filled with VBB

(2) p – n junction having thin I-V characteristics

electrons at OK is (1) Electrons are majority charge FORWARD BIAS depletion layer I (mA)
called valence band. carriers.
In Forward Bias - Here, p -n junction does not IB(µA)
(2) Holes are minority charge carriers.
(1) +ve terminal to p – side damage permanently
(3) Si or Ge doped with pentavalent Reverse bias 100 VCE = 10.0 V

elements (P,As, Sb) (2) -ve terminal to n – side VZ Forward bias

Conduction Band is (3) depletion layer reduced V (V)
80

completely empty (4) diffusion current increases A

60
AVALANCHE BREAKDOWN IB = 40 µ 40
at OK. P – type Semiconductor nh >> ne 10
IB = 30 µA 20
This phenomenon takes place in, I ( A)
8
(1) Si or Ge doped with trivalent ( B, Al)
REVERSE BIAS (1) p - n junction having ‘Low 6 IB = 20 µA VCE (V)

IC (mA)
elements 0.2 0.4 0.6 0.8 1.0
energy band gap is the In reverse Bias doping’ 4
input characteristics
(2) Electrons are minority charge PHOTODIODE IB = 10 µA
difference between carriers. (1) -ve terminal to p – side
(2) p - n junction having thick
2
The symbol of photodiode is IB = 0 µA
Valence band and depletion layer.
(3) Holes are majority charge carriers (2) +ve terminal to n -side
Conduction band - Here, p – n junction damages 1 2 3 4 5
(3) depletion layer increases Output characteristics VCE (volt)
permanently due to abruptly
(4) diffusion current increases
THERMAL EQUILIBRIUM increment of minorities during I-V characteristics of a RB
C
IC
B RC
conduction band repetitive collisions. photodiode APPLICATION OF
Energy (eV)

IB E
forbidden mA TRANSISTOR Vo
The electron and hole Concentration
energy gap Vi
VBB
IE
VCC
in a Semiconductor in thermal
Reverse bias
valence band equilibrium is given by. nenG = ni2 AS A SWITCH
I1 volts

Forward characteristics curve Reverse characteristic curve I2

I3
Vbr I4 A Cut off
iF
VR
I0 I-V characteristics I4>I3>I2>I1 AS AN AMPLIFIER region
(volt)
(mA) of a solar cell. Active
Conductor (Metal) Insulator Semiconductor IC region
IR
Overlapping Empty knee
voltage (µA)
SOLAR CELL RB
C
conduction band EC conduction B
Electron energies

band Conduction 0 I RC Saturation

EC input IB
Electron energies

band 0.7 1.4 2.1 region

Electron energies

VF (volt) Voc (open circuit voltage) signal E V

CE
Eg 3 eV Eg Vo
V V0
EV IE amplified
(E g 0)
Knee or cut in voltage Breakdown voltage VCC AV
Valence output signal
EC EV EV Ge → 0.3 V, Si → 0.7 V Ge → 25 V, Si → 35 V Isc
Valence band V1
Valence Short circuit D2
band band VBB
current Transfer characteristic
common emitter amplifier NPN transistor

anand_mani16 DR. Anand Mani https://www.anandmani.com/ https://discord.io/anandmani t.me/anandmani001