WORLD UNIVERSITY

OF BANGLADESH
A University for Quality and Utilitarian Education

Program: B.Sc. in Computer Science & Engineering

Course Title: Electronic Devices & Circuits
Code: CSE-307
Submitted By:
Ashik Hossen Israfil
ID No: WUB 03/20/51/3295
Batch: 51/C
Roll: 3295

Submitted to:
Md. Istianatur Rahman
Sr. Lecturer, Dept. of EEE
World University of Bangladesh

Date of Submission: 22 November 2023

A Bipolar Junction Transistor (BJT) is a three-layer semiconductor device
consisting of an N-type or P-type semiconductor sandwiched between two layers
of the opposite type. There are two types of BJTs: NPN (Negative-Positive-
Negative) and PNP (Positive-Negative-Positive). Let's discuss the configurations
of BJT, namely Common Emitter (CE), Common Base (CB), and Common
Collector (CC), along with their respective circuit diagrams.

The three basic configuration of a BJT are (a) common emitter (CE), (b)common
base (CB), (c) common collector (CC) or emitter follower. These basic
configurations are shown in Figure 1,2,3
The replacement of the basic configurations with equivalent circuit models and the
small signal approximations converts the original nonlinear problems into linear
ones, greatly simplifying their analysis:

Figure no :01
 Figure no 02

Figure no :03
1. Common Emitter Configuration (CE):
• Key Characteristics:
• Input is applied to the base (B), output is taken from the
collector (C).
• It provides both voltage and current amplification.
• Inverts the input signal.
• Applications:
• Widely used for general-purpose amplification due to its high
voltage gain.
• Commonly employed in audio amplifiers and radio frequency
(RF) circuits.
2. Common Base Configuration (CB):
• Key Characteristics:
• Input is applied to the emitter (E), output is taken from the
collector (C).
• Provides current amplification but has low voltage gain.
• Non-inverting configuration.
• Applications:
• Used in high-frequency amplifiers and applications where low
input impedance is crucial.
• Commonly found in UHF (Ultra High Frequency) and
microwave circuits.
3. Common Collector Configuration (CC):
• Key Characteristics:
• Input is applied to the base (B), output is taken from the emitter
(E).
• Voltage gain is less than unity, but it has high current gain.
• Non-inverting configuration.
• Applications:
• Often employed as a voltage buffer due to its high input
impedance and low output impedance.
• Used in impedance matching circuits and as an interface
between high-impedance sources and low-impedance loads.