1. Define PN junction.

When a p type semiconductor is joined to a N type semiconductor the contact surface is

called PN junction. P Type (majority of holes and minority of electrons) and N Type
(majority of electrons and minority of holes).
2. Explain the forward bias of diode
If p type terminal is connected to Anode (positive electrode), and N type terminal is
connected to cathode (Negative electrode) it is known as forward bias. At forward bias, large
current will flow in the range of milli amperes (10-3A). Forward bias is equivalent to short
circuit.
3. Explain reverse bias of diode (PN Junction).
If p type is connected to cathode and N type is connected to anode, it is reverse bias. At reverse
bias, small current will flow in the range of micro amperes (10-6). Reverse bias is equivalent to
open circuit.
4. Explain the V-I characteristics of PN Junction diode.
It is a graph drawn between voltage in x axis and current in y axis.
5. A Germanium diode has a saturation current of 10 μA at 300°K. Find the saturation
current at 400°K.
I300 = 10μA T1 = 300K T2 = 400K
I400 = I300 X 10-6 X 210 = 10.2 mA.
6. What is the effect of junction temperature on forward current and reverse current of a
PN diode?
For the same forward voltage, the forward current of a PN diode increases and reverse
saturation current increases with increase in junction temperature.
7. Differentiate between breakdown voltage and PIV of a PN diode.
The breakdown voltage of a PN diode is the reverse voltage applied to it at which the PN
junction breaks down with sudden rise in reverse current. Whereas, the peak inverse voltage (PIV)
is the maximum reverse voltage that can be applied to the PN junction without damage to the
junction.
8. What is the difference between diffusion current and drift current?
Drift Current Diffusion current
1. Developed due to potential gradient. 1. Developed due to charge
concentration gradient.
2. Phenomenon found both in 2. Only in semiconductors
semiconductors and metals.
9. Define knee voltage.
It is the forward voltage of a PN diode at which the current thorough the junction starts
increasing rapidly.
10. Define breakdown voltage.
It is the reverse voltage of a PN junction diode at which the junction breaks down with
sudden rise in the reverse current.
11. Mention the type of rectifier circuits.
(i) Half wave rectifier
(ii) Full wave rectifier
(a) centre tap rectifier
(b) Bridge rectifier
12. Explain the Half wave circuit.
Half wave rectifier circuit consists of one Semiconductor Diode D1 and load Resistance
RL. That is current will flow during positive half cycle and no current will be conducted during
negative half cycle.
13. List the advantages of full bridge rectifier.
1. Centre-tapped transformer is not needed.
2. For the same secondary voltage, the output is doubled than that of the centre-tap
Circuit.
14. Define Zener diode.
A zener diode is a properly doped crystal diode which has a sharp breakdown voltage.
15. Compare between half wave and full wave rectifiers.
1. The efficiency of a full wave rectifier is double that of a half wave rectifier
2. The ripple factor is large and frequency of voltage is low in a half wave rectifier, hence
the waveform cannot be easily smoothed whereas in full wave rectifier, the frequency is large
therefore can be filtered easily with simple filtering circuits.
16. Define ripple factor
The ripple factor is a measure of purity of the dc output of a rectifier and is defined as
17. Define rectifier efficiency.
The rectification efficiency tells us what percent of total input ac power is converted into
useful dc output power. Thus rectification efficiency is defined as
18. Define voltage regulation
Voltage regulation is a measure of the ability of a rectifier to maintain a specified output
voltage with the variation of load resistance and is defined as follows.
19. List the classification of filters
 1. Low pass filter which transmits low frequencies to the load and attenuates high
frequencies.
2. High pass filter which transmit high frequencies.
3. Band pass filter which transmits a band of frequencies.
20. Define LED.

The PN junction diode can emit light through a process known as electro luminescence.
When a diode is forward biased, majority of the carriers on both side of the junction will cross
the junction potential barrier. This recombination emission is responsible for the diode emitting
light.
21. Define LCD (Liquid Crystal Display).
A thin film of LC fluid is sandwiched between two glass plates. The glass plates are
coated with conductive transparent in the film formed of the desired alpha numeric image.
LCD’s consume less power and have the shortest life.
22. Mention the types of LCD.
1. Dynamic scattering
2. Field effect.
23. Mention the materials used in LED.
1. Gallium Arsenic Zinc Antimony.
2. Gallium Phosphorous.
3. GA As Ps. & Ga PN.
24. What is an ideal diode?
An ideal diode is one which offers zero resistance when forward biased and infinite
resistance when reverse biased.
25. Compare ideal diode as a switch.
An ideal diode when forward biased is equivalent a closed (ON) switch and when reverse
biased, it is equivalent to an open (OFF) switch.
26. Draw the circuit diagram of PN Diode

27. Draw the V-I characteristics of an ideal diode.

28. List the PN diode parameters.
1. Bulk Resistance. ( )
2. Static Resistance/Junction Resistance (or) DC Forward Resistance ( or )
3. Dynamic Resistance (or) AC Forward Resistance ( or or )
4. Reverse Resistance ( )
 5. Knee Voltage ( )
6. Breakdown Voltage ( )
7. Reverse Current (or) Leakage Current
29. State the PN diode ratings.
Even PN-Junction has limiting values of maximum forward current, peak inverse voltage
and maximum power rating.

30. Define reverse recovery time.

It is maximum time taken by the device to switch from ON to OFF stage.
31. List the PN diode switching times.
1. Recovery Time
2. Forward Recovery Time
3. Reverse Recovery Time
4. Reverse recovery time, ( )
5. Storage and Transition Times
32. Define transition capacitance of a diode.
Transition Capacitance (CT) or Space-charge Capacitance: When a PN-junction is
reverse-biased, the depletion region acts like an insulator or as a dielectric.
The P- and N-regions on either side have low resistance and act as the plates. Hence it is similar
to a parallel-plate capacitor. This junction capacitance is called transition or space-charge
capacitance (CT).
33. Define diffusion capacitance of a diode.
Diffusion or Storage Capacitance (CD): This capacitive effect is present when the
junction is forward-biased.
It is called diffusion capacitance due to the time delay in minority charges across the
junction by diffusion process. Due to this fact, this capacitance cannot be identified in terms of a
dielectric and plates. It varies directly with forward current. When a forward-biased PN-junction
is suddenly reverse biased, a reverse current flow which is large initially, but gradually decreases
to the level of saturation current, I0.
This effect can be likened to the discharging, of a capacitor and is, therefore called
diffusion capacitance, CD. Its typical value is 0.02 F
It is given by:
Where, = Mean life time of carrier = Constant =2 for Si and 1 for Ge
I = Forward current
I0 = Reverse saturation current
VT = Volt equivalent of temperature
34. Draw the V-I characteristics of a zener diode

35. List some applications of zener diode.

Zener diode finds wide commercial and industrial applications. Some of their common
applications are:
 As voltage regulators.
 As peak clippers or voltage limiters.
 For wave shaping.
 For meter protection against damage from accidental application of excessive voltage.
 As a fixed reference voltage in a network for biasing and comparison purposes and for
calibrating voltmeters.
36. What is a rectifier-filter? List the different types of filters.
A filter circuit is a device which removes the AC component but allows the DC
components of the rectifier to reach the load.

Ripples can be removed by one of the following filtering methods.

(i) A capacitor, in parallel to the load, provides a easier bypass for the ripples due to low
impedance to AC at ripple frequency and leave the DC appear across the load.
(ii) An inductor, in series with the load, prevents the passage of ripples due to high impedance at
ripple frequency, while allowing the DC due to low resistance to DC.
(iii) Various combinations of capacitor and inductor, such has L-section filter, π-section filter,
etc., which make use of both the properties depicted above.
37. What is the need for voltage regulators? What are the drawbacks of unregulated power
supply?
An ordinary (unregulated) power supply from the following drawbacks:
Poor regulation
 The DC output voltage varies with the AC supply voltage which fluctuates at different
times of the day and is different at different locations.
 The DC output voltage varies with temperature, in case semiconductors are used.
 For certain applications the output of the filter even with small amount of ripples is not
acceptable.
38. What is voltage regulator? List some types.)
A voltage regulator is a circuit which makes the rectifier-filter output voltage constant
regardless of the variations in the input voltage or load.
Types of regulators: There are three principal types of regulators, viz.,
 Shunt regulator (control element connected with series),sample network ,error detector,
constant voltage
 Series regulators(control element connected with shunt),sample network ,error detector,
constant voltage
39. Define Dynamic resistance
Dynamic resistance defined as ratio of rate of change voltage divided by rate of change
of current
41. What are the advantages and limitations of LCD DISPLAY?
 Less power consumptuion
 Low cost
 Uniform brightness with good contrast
 Low operating voltage and current
 Power reliability
 Limited temprature range
 Slow speed
1. Draw the circuit diagram and explain the operation of full wave rectifier using center tap
transformer and using bridge rectifier without center tap transformer. Obtain the
expression for peak inverse voltage.
2. With neat diagram explain the construction and working of LED.
3. Explain the working of LCD seven segment displays using square wave supply. (
4. What is half wave Rectifier? Explain the working principle with neat sketch. (
5. Explain the operation of FWR with centre tap transformer. Also derive the following for
this transformer. (6)
(i) Dc output voltage (4)
(ii) Dc output current (2)
(iii) RMS output voltage. (4)
6. Explain the following regulator circuits :
(i) Transistorized shunt regulator. (8)
(ii) Zener diode shunt regulator. (8)
7. With a neat diagram explain the working of a PN junction diode in forward bias and
reverse bias and show the effect of temperature on its V-I characteristics.
8. Explain V-I characteristics of Zener diode(
9. List out and explain the applicatons of LED and LCD
 10. In a semiconductor at room temperature(300 degree kelvin),the intrinsic carrier concentration and
resistivity are 1.5*1016 /cm3 and 2*103 Ω-m respectively.it is converted to an extrinsic
semiconductor with a doping concentration of 1020 / m3 .for the extrinsic semiconductor.
Calculate the
(i) Minority carrier concentration
(ii) Resistivity
(iii) Shift in fermi level due to doping
(iv) Minority carrier concentration when its temperature is increased to a value at which the
intrinsic carrier concentration ‘ni. Doubles
Assume the mobility of majority and minority carriers to be the same and KT=26meV at room
temperature.
BJT AND ITS APPLICATIONS
1. Define Amplifier.
Amplifier is a device which amplifies the given input signal.
Example: transistor
2. Define Transistor.
It consists of two PN Junctions formed by sandwiching either p-type or n-type
semiconductor between a pair of opposite types.
3. Mention the types of transistor?
1. NPN Transistor
2. PNP Transistor
4. Mention the terminals of transistor.
The transistor has three terminals namely emitter, base and collector.
5. Define doping.
The emitter is heavily doped. The base is lightly doped and the collector is moderately
doped.
6. Define current amplification factor.
The ratio of change in output current to the change in input current at constant other side
voltage is called current amplification factor.
7. Explain the input characteristics of transistor.
It is a graph drawn between output voltage and input current keeping other side voltage
as constant.
8. Explain the output characteristics of transistor.
It is a graph drawn between output voltages and output current keeping other side current
(I/P) as constant.
9. Mention the types of connection in a transistor.
1. Common base connection.
2. Common emitter connection
3. Common collector connection.
slno characteristics CB CE CC
1. Voltage gain About 150 About 500 Less than 1
2. Input Low (about Low (about Very high
resistance 75Ω) 750Ω) (about 750KΩ)
3. Output Very high High (about Low (about
resistance (about 450KΩ) 45KΩ) 45Ω)
4. Applications For high For audio For impedance
frequency frequency matching
applications applications

11. For a non-transistor IE = 12mA and β = 140. Determine the value of IB and Ic.
IE = 12mA, β = 140
IE = IB + IC
IC = IE - IB = 12 - 0.085 X 10-3 = 11.915mA.
12. What are power transistors?
Power transistor is used for high power apllication.its configured by high base emitter,
collector
13. Differentiate FET and BJT (any two)
. FET BJT
1. Unipolar device (that is current 1. Bipolar device (current conduction by
conduction by only one type of either both electron and hole).
electron or hole).
2. High input impedance due to reverse 2. Low input impedance due to forward
bias. bias.
3. Gain is characterized by trans 3. Gain is characterized by voltage gain.
conductance
4. Low noise level 4. High noise level.
14. What are the biasing conditions to operate transistor in active region?
Emitter-base junction has to be forward biased and collector-base junction to be reverse
biased.
15. What is thermal runaway?
The power loss in transistor is primarily at the collector junction because the voltage
there is high compared to the low voltage at the forward biased emitter junction. If the collector
current increases, the power developed tends to raise the junction temperature. This causes an
increase in β and α further increase in collector current in temperature may occur resulting in
“thermal run away.”
16. If the base current in a transistor is 30μA and the emitter current is 7.2mA. What are
the values of α, β and Ic?
IB = 30μA, IE = 7.2mA
H = = Ic = βIB
I + β = 240 = 239 X 30 X 10-6
β = 240 – 1 IC = 7.17mA
β = 239
17. In a transistor operating in the active region although the collector junction is reverse
biased, the collector current is quite large. Explain.
Forward biasing the input side and reverse biasing the output side are the requirements of
a transistor in the active region. The collector current is experimentally equal to the emitter
current. Therefore the collector current will be large as emitter current is large on the other hand,
in CE operation IB is multiplied by β, hence we get large collector current.
18. Why CE configuration is considered to be the most versatile one?
The common emitter configuration provides very good voltage gain about 500CE
configuration finds excellent usage in audio frequency applications, hence used in receivers and
transmitter.
19. Define bipolar junction transistors.
These devices operate with both holes and electrons and hence are called bipolar
junction.
20. Write the junction transistor operation may be drawn from the analysis.
1. The major charge carriers in the PNP junction transistor are holes.
2. The major charge carriers in the NPN junction transistor are electrons.
21. Write the range of parameter values for BJT.
Parameter Symbol Range of value
1. Input resistance ri A few kΩ
2. Current gain in CB α 0.9 – 0.999
mode
3. Current gain in CE β 20 - 600
mode
4. Output resistance r0 Tens of KΩ
5. Leakage current ICBO Na - μA
22. Why transistor (BJT) is called current controlled device?
 The output voltage, current or power is controlled by the input current in a transistor. So,
it is called the current controlled device.
23. What are “emitter injection efficiency” and “base transport factor” of a transistor?
The ratio of current of injected carriers at emitter junction to the total emitter current is
called the emitter injection efficiency.
24. Why silicon type transistors are more often used than Germanium type?
Because silicon has smaller cut-off current ICBO , small variations in ICBO due to
variations in temperature and high operating temperature as compared to those in case of
Germanium.
25. Why collector is made larger than emitter and base?
Collector is made physically larger than emitter and base because collector is to dissipate
much power.
24. Why h-parameters are called hybrid parameters?
Because they have different units are mixed with other parameters.
25. Which is the smallest of the four h-parameters of a transistor?
h0 or h12
26. What is the typical value of hie?
1 kΩ
26. A transistor connected in common base configuration has a -________ input resistance
and a ________ output resistance.
Low input resistance.
Very high output resistance.
27. Which of the BJT configuration is suitable for impedance matching application and
why?
CC configuration is suitable for impedance matching applications because of very high
input impedance and low output impedance.
28. What are the tools used for small signal analysis of BJT?
i. h – Parameter circuit model.
ii. z – Parameter circuit model.
iii. y – Parameter circuit model.
iv. Transconductance parameter circuit model.
v. Physical model.
vi. T-model.
29. What is the significance of ICBO and ICO?
 ICBO is the leakage current from the collector to base with emitter open. ICO is the
leakage current from collector to emitter with base open (ICO = ICEO).
30. What is early effect in base configuration?
A wider depletion region around the collector-base junction and a correspondingly narrower
active base region. This means that free electrons in the base region spend less time there, and have a
correspondingly smaller chance to recombine with holes in the base region. This is known as the early
effect
31. Why collector region wider than emitter region?
Most of the BJT collector current is due to the flow of charges injected from a high-concentration
emitter into the base where there are minority carriers that diffuse toward the collector, and so BJTs are
classified as minority-carrier devices.
32. What is opt coupler?
In electronics, an opto-isolator, also called an opt coupler, photo coupler, or optical isolator, is
"an electronic device designed to transfer electrical signals by utilizing light waves to provide coupling
with electrical isolation between its input and output"
33. Input and output characteristics of CE, CB, CC?

34. What are hybrid parameters?

Input impedance h11
Forward voltage h12
Reverse current h21
Output impedance h22
35. Calculate β of a transistor when α=0.98?
β =α/ (1-α)
=0.98/ (1-0.98)
=49
36. Write the AC input impedance of Darlington transistor (A.U.NOV-2012)
RI=hie+ ((1+hfe) 2Re)/ (1+hoehfeRe)

37. Draw the circuit of NPN transistor in CB configuration?

 1. Draw the circuit for determining the transistor common base characteristics and explain
how the characteristics are measured and draw the graphs.
2. For a common emitter circuit draw the h-parameter equivalent circuit and write the
expressions for input impedance, output impedance and voltage gain.
3. Describe the specifications of Hybrid – π model (or) Giacoletto model with neat sketch
and derive the expression for transconductance.
4. Draw and explain the Input and Output characteristics of a BJT in CE configuration.
5. Describe the static input and output characteristics of a CB transistor with neat circuit
diagram.
6. Derive the expression for current gain, input impedance and voltage gain of a CE
Transistor Amplifier.
7. Explain the important characteristics of optocoupler.
8. Explain the switching characteristics of transistor with neat sketch.
9. Draw and explain the characterstics curves of a common collector amplifier
10. What are power transistors?
11. A common base transistor amplifier is driven by a voltage source VS and internal resistance
RS=1200Ω.the load impedance is a resitor RL of 1000 .the h parameters are given below
Hib=220Ω Hrb=3*10-4
Hfb=-0.98 Hob=0.5*10-6 A/V
12. Draw the circuit NPN transistor CE configuration and describe the static input and output
Characteristics
13. Compare CB, CE, CC

FET AND ITS APPLICATIONS

1. Define JFET
A Junction field effect Transistor is a three terminal semiconductor device in which
current conduction is by one type of carrier (i.e., either electron or holes)
2. Define channel.
It is a bar like structure which determines the type of FET. Different types of N channel
are FET and P channel FET.
3. Explain the biasing of JFET.
Input is always reverse biased and output is forward biased. (Note: In transistor input is
forward biased and output is reverse biased).
4. Define Drain (ON) resistance.
It is the ratio of change in Drain – source voltage (ΔVDS) to the change in Drain current
(ΔID) at constant gate source voltage (VGS).
5. Define Tran conductance.
It is the ratio of change in drain current (ΔID) to the change in Gate – Source Voltage
(ΔVGS) at constant Drain – Source voltage (VDS)
6. Write down the formula for Amplification factor.
Drain resistance X Tran conductance = Amplification factor.
μ = Ro X gm
7. Write the advantages of JFET.
1. Input impedance of JFET is very high. This allows high degree of Isolation between
the Input and Output circuit.
2. Current carriers are not crossing the junction hence noise is reduced drastically
8. List the JFET parameters.
1. A.C drain resistance (rd)
2. Tran conductance (gm)
3. Amplification factor (μ)
9. Mention the two types of field effect transistors,
1. N-channel FET
2. P-channel FET
10. Define pinch off voltage.
As the reverse bias is further increased, the effective width of the channel decreases, the
depletion region or the space charge region widens, reaching further into the channel and
restricting the passage of electrons from the source to drain. Finally at a certain gate to source
voltage VGS = VP.
11. Explain the depletion node of operation in MOSFET.
When the gate is at negative bias, the thickness of the depletion layer further increases
owing to the further increase of the induced positive charge. Thus the drain current decreases, as
the gate is made more negative. This is called depletion mode of operation.
12. Explain the term Drain in FET.
The drain is the terminal through which the current leaves the bar. Convention current
entering the bar is designated as ID.
13. Explain the terms source in FET.
The source is the terminal through which the current enters the bar. Conventional current
entering the bar is designated as IS.
14. Define the term Gate in FET.
The gate consists of either P+ or N+ impurity regions, heavily doped and diffused to the
bar. This region is always reverse biased and in fact, controls the drain current ID.
15. Write the relative disadvantages of an FET over that of a BJT.
1. The gain bandwidth product in case of a FET is low as compared with a BJT.
2. The category, called MOSFET, is extremely sensitive to handling therefore additional
precautions have to be considered while handling.
16. Mention the methods used for biasing circuits in FET.
1. Self-bias.
2. Potential divider bias.
17. Mention the difference between FETs and MOSFETs.
Symbol JFET MOSFET
gm 1000 to 25,000 1000 to 20,000 pmhog
μmhoms
rd 0.1 to 1MΩ 1 to 50KΩ
IGSS 0.1 to 10nA 0.1 to 10nA
-ras >109Ω >101313Ω
Crss or Cgd 1 to 4Pf 0.005 to 1Pf

18. Explain the term MOSFET.

In the insulated gate FET, conductivity is controlled by the potential on the insulated
metal plate lying on the top of the channel the insulated gate field effect transistor is often called
metallic oxide semiconductor FET.
 Depletion mosfet
 Enhancement mosfet
19. List some applications of JFETs.
 Used as buffers in measuring equipment, receivers and other general purpose devices.
  Used in RF amplifiers of FM tuners and communication equipment.
 Used in mixer circuits in FM and TV receivers and communication equipment.
 Used in cascade amplifiers in measuring and test equipment.
 Used as voltage variable resistor (VVR) in OP-AMPs and tone controls.
 Used in hearing aids and inductive transducers.
 Used in oscillator circuits.
 As the physical size is small; it finds use in digital circuits in computers, large scale
integration (LSI) and memory circuits.
.
1. Draw the circuit diagram of common source FET amplifier and give the design steps to
find the component values used in the circuit.
2. Explain the construction and working of enhancement MOSFET and depletion MOSFET.
Draw the characteristics.
3. Distinguish clearly the difference between JFET and MOSFET?
4. Calculate the operating point of the self biased JFET having the supply voltage VDD =
20V, maximum value of drain current IDSS = 10 mA and V GS = - 3V at ID = 4mA. Also
determine the values of resistors RD and RS to obtain this bias condition
5. Explain the construction of N channel JFET. Also explain the drain and transfer
characteristics of the same.
6. Explain how the transconductance of a JFET varies with drain current and gate voltage
Characteristics and transfer characteristics.
7. Draw the Small signal equivalent circuit of FET amplifier in CS connection and derive the
Equations for voltage gain, input impedance and output impedance
8. Sketch Darlington connection
9. In the common drain FET amplifier of above Let Rs=4k, μ=50,rd=35k.evaluate the
Voltage Gain AV.
10. Cascode amplifier have high bandwidth. Validate this statement suitably

AMPLIFIERS AND OSCILLATORS

1. Mention the types of feedback.
1. Positive or regenerative feedback.
2. Negative of degenerative feedback.
2. Define feedback.
Action of the output voltage of an amplifier into the input so that it becomes a part of the
input is known as feedback.
3. Define positive feedback.
It is the feedback voltage in phase with the input from the source; it reinforces the
original input signal and is called positive or regenerative feedback.
4. Define Negative feedback.
If the feedback voltage is opposite in phase to the input from the source, i.e., opposes the
original input signal and is called negative or degenerative feedback.
5. Mention the four connections in Feedback.
1. Voltage series feedback.
2. Voltage shunt feedback
3. Current series feedback.
4. Current shunt feedback.
6. Explain the voltage series feedback.
In this case, the feedback voltage is derived from the output voltage and fed in series with
input signal. The input of the amplifier and the feedback network are in series is also known as
series parallel in parallel, hence this configuration is also known as series parallel feedback
network.
7. Explain the voltage shunt feedback.
The input of amplifier and the feedback network are in parallel and known as parallel –
parallel feedback network. This type of feedback to the ideal current to voltage converter, a
circulating having very low input impedance and very low output impedance.
8. Explain the current series feedback.
When the feedback voltage derived from the load current and is fed in series with the
input signal, the feedback is said to be current series feedback, the inputs of the amplifier and the
feedback network are in series and the output are also in series. This configuration is also called
as series-series feedback configuration.

9. Explain the current shunt feedback.

When the feedback voltage is derived from the load current and a fed in parallel with the
input signal, the feedback is said to be current shunt feedback. Herein the inputs of the amplifier
and the feedback network are in parallel and the outputs are in series. This configuration is also
known as parallel series feedback.
10. Write the effects of negative feedback.
1. The gain becomes stabilized with respect to changes in the amplifier active device
parameters like hfe.
 2. The non-linear distortion is reduced there by increasing the signal handling capacity or
the dynamic range of the amplifier.
11. Write the conditions for a circuit to oscillate.
1. The oscillator circuit should consist of an amplifier and a portion of the output should
be feedback to the input. For sustained oscillations, the feedback voltage must be in phase
with the input, i.e., total phase shift around the loop must be 360°.
2. The amount of energy or power feedback to the input must be sufficient to the input
circuit.
12. Mention the classification of oscillators.
According to the frequency determining networks,
1. RC oscillators
2. LC oscillators
3. Crystal oscillators
13. List the advantages of phase shift oscillator.
1. The phase shift oscillator does not required conductance or transformers.
2. It is suitable for the low frequency range i.e., from a few hertz to several hundred KHz.
The upper frequency is limited because the impedance of RC network may become so
small that it loads the amplifier heavily.
14. Write the disadvantages of Phase shift oscillator.
1. It is necessary to change the C or R in all the three RC networks simultaneously for
changing the frequency of oscillations. This is practically difficult.
2. It is not suitable for high frequencies.
15. Write the main drawback of LC oscillators.
1. The frequency stability is not very good.
2. They are too bulky and expensive and cannot be used to generate low frequencies.

16. Define Piezo electric effect.

Certain crystal, when suitable wt, develop a potential difference between opposite faces,
magnitude and polarity of which depends on pressure or tension applied to the other pair of
perpendicular faces. This effect is called Piezo electric effect.
17. Define differential amplifier.
When two or more input is applied to the amplifier and receives the single output is
called differential amplifier.
VO = V1 - V2
18. Define stability.
The variation of input is applied to the system; to get the constant output is called
stability.
19. Define switch.
A switch is a device which opens or closes the electrical circuit, i.e., can turn on or off
current in an electrical circuit. An ideal switch has zero internal resistance when it is closed an
infinite leakage resistance when it is open.
20. Give the barkhausen criterion for oscillator
When AB = -1, the gain is infinite this represents the condition for oscillation The requirements
for oscillation are described by the Barkhausen criterion: The magnitude of the loop gain AB must be 1
The phase shift of the loop gain AB must be 180,or 180 plus an integer multiple of 360.
It should be mentioned that the criterion is necessary but not sufficient. The criterion is just an
observation based on the assumption of a linear circuit.
21. Advantage of negative feedback amplifier?
Better frequency response, less distortion, less gain or voltage drift, less temperature drift, better
CMRR, SVRR, bias point stability.
22. List the advantage of crystal oscillator?
 Temperature stability
 Long term stability
 RF oscillator and filters
23. Define CMRR of differential amplifier
Ratio of common mode gain and differential gain

1. Explain the concept of negative feedback in amplifier. Derive the expressions for voltage
gain, input impedance and output impedance.
2. With a neat diagram, explain the construction and working of BJT RC phase shift
oscillator.
3. What is crystal oscillator? Draw the circuit diagram and explain the operation.
4. Derive the equation for differential mode gain and common mode gain of a differential
amplifier.
5. Draw and explain the operation of a Hartley oscillator. Derive the equation for fr and hfe
6. Draw the block diagram of a voltage series feedback amplifier and derive the equation for
input impedance, output impedance and the voltage gain.
7. Discuss the various topologies of feed back amplifier.
8. Discuss the operation of a colpitts oscillator in detail.
9. Describe the operation of a typical voltage shunt feedback amplifier.
 10. Draw the circuit diagram of an emitter ,coupled BJT differential amplifier and derive the
expressions for differential gain, common mode gain, CMRR, input impedance and output
impedance
11. Write short notes on crystal oscillator

PULSE CIRCUITS
1. What is the function of Clamper circuit?
Clamper circuit introduces a d.c level to an a.c signal. Hence, the damper circuit or
network is also known as d.c restorer. These circuits find applications in television receivers to
restore the d.c reference signal to the video signal.
2. Define rise time.
The time during which the voltage or current reaches to a maximum positive or negative
value is called the rise time. The rise time is zero for the square wave.
3. Define sinusoidal waveform.
A sine wave varies continuously in amplitude in proportion to the sine of an angle which
varies from o to 360°.
4. Define market pips.
Circuits make use of the transient properties of R, C and l to realize the mathematical
operations of differentiations, integration and summation. The differentiating circuit is
extensively used to convert summation. The different circuit is extensively used to convert pulse
trains to a series of timing pips known as market pips.
5. Mention the classification of switches.
1. Mechanical switch.
2. Electronic switch.
6. Define ramp function generator.
The shape of the pulse resemble the teeth or a saw, therefore the name saw tooth
waveform. A saw tooth generator is also called ramp function generator.
7. Define Multi vibrators.
There is a class of RC coupled oscillators called Multivibrators which generate non-
sinusoidal waveforms such as triangular square and sawtooth.
8. Define free running multi vibrators.
A Multivibrator is a form of relaxation oscillators. They may need no external excitation,
i.e., they are self-excited; if so they are termed as free running Multivibrator.
9. Mention the types of Multivibrators.
1. Monostable multivibrator.
 2. Bistable multivibrator.
3. Astable multivibrator.

10. Define Astable multivibrator.

The change in the output state is regenerative. The output never remains permanently at a
particular state. Hence, this multivibrator is called astable multivibrator.
11. Define bistable multivibrator.
Since in the absence of an external signal, either transistor can continue indefinitely in ON
or OFF state, they are equally stable in both staes. Therefore, the name Bistable multivibrator.
12. Define Monostable multivibrator.
It is also called the one shot multivibrator. The one shot multivibrator is driven, it is not
free running unlike the bistable trigger, the monostable has one stable state to which it returns after
the eternal driving pulse has caused it to execute its cycle.
13. Define Schmitt Trigger.
When the input is sinusoidal signal and converted to square waveform in output is called
Schmitt trigger. Generation of pulses when the voltage level rises to a certain value is achieved
by using a circuit.
14. Define high pass filter.
At very high frequencies the capacitor acts as a virtual short circuit and the output falls to
zero. Hence this circuit passes the low frequencies of the input and attenuates the high frequency
is called low pass filter.
15. Define duty cycle.
It is the ration of the ON period to the total period.
(T = TON + TOFF)
16. Write the application of Astable Multivibrator.
1. The astable multivibrator is used as square wave generator, voltage to frequency
convertor and in pulse synchronization, as clock for binary logic signals and so on.
2. Since it produces square waves it is a source of production of harmonic frequencies of
higher order,
17. If an astable multivibrator has C1 = C2 = 1000PF and R1 = R2 = 20KΩ. Calculate the
frequency of oscillation.
The frequency of a symmetrical astable multivibrator
18. Write the applications of monostable multivibrator.
1. The monostable multivibrator is used to function as an adjustable pulse width
generator.
 2. It is used to generate uniform width pulses from a variable width input pulse train.

19. Write the application of Bistable multivibrator.

1. The bistable multivibrator is used as memory element in shift registers counters, and so
on.
2. It is used to generate square waves of symmetrical shape by sending regular triggering
pulses to the input. By adjusting the frequency of the input trigger pulse, the width of the
square wave can be altered.
20. Define pulse and pulse circuits.
The word “pulse” is applied to waveforms that exist for a very short period. The word
“pulse circuits” refer to the active and passive circuits intended to handle, generate, shape and
sotre pulse signals.
21. Define switching circuit.
A circuit which can turn ON or OFF the current in the electronic circuits is called
switching circuit
22. Define wave shaping and wave shaping circuits.
The process of generating new wave shapes from older wave forms using some netword
is called wave shaping. The circuits which perform wave shaping are called wave shaping
circuits.
Eg: Clippers, Clampers, Integrator, Multipliers, etc.
23. Give some examples of linear and non-linear wave shaping circuits.
Linear wave shaping circuits – use R,L,C.
Examples: RC, RL, RLC circuits, Integrator, Summer, etc.
Non-linear wave shaping circuits – uses R,L,C diodes,
Examples: Clippers, Clampers, etc.
24. Why the capacitor in a high pass RC circuit is called blocking capacitor?
Because of the blocking property of the capacitor for DC or low frequency input signals,
the capacitor acts like an open circuit and blocks the signal. So the capacitor in high-pass RC
circuits is called “blocking capacitor”.
25. Why a high-pass RC circuit is called differentiator?
Because it gives the output voltage proportional to the differentiation of input voltage.
26. What is UJT?
A unijunction transistor (UJT) is an electronic semiconductor device that has only one junction.
The UJT has three terminals: an emitter (E) and two bases (B1 and B2). The base is formed by
lightly doped n-type bar of silicon. Two ohmic contacts B1 and B2 are attached at its ends. The emitter is
of p-type and it is heavily doped. The resistance between B1 and B2, when the emitter is open-circuit is
called inter base resistance.
26. Intrinsic standoff ratio in UJT? (A.U.APRIL-2010) (A.U.NOV-2012)
The connections at the ends of the bar are known as bases B1 and B2; the P-type mid-point is the
emitter. With the emitter disconnected, the total resistance RBBO, a datasheet item, is the sum of RB1 and
RB2 as. RBBO ranges from 4-12kΩ for different device types. The intrinsic standoff ratio η is the ratio of
RB1 to RBBO. It varies from 0.4 to 0.8 for different devices.
27. Draw the differentiator and integrator circuit? (A.U.APRIL-2011)

28. If a astable multivibrator has C1=C2 =1000PF and R1=R2=20KΩ.Calculate the frequency of
oscillations (A.U.NOV-2012)
T1=T2=0.69RC=0.69*20*103*1000*10-12=13.8*10-6sec
Period=T=T1=T2=2*13.8*10-6
=27.6*10-6
F=1/T
=1/27.6= 0.03623 MHz
29. Write the frequency equation of an astable multivibrator?
T=0.69RC
F=1/T
30. What is schmitt trigger?
It looks like basic bistable configuration but it differs by the fact that the coupling from
colector of the transistor Q2 to the input of first stage is missing in this circuit
31. What are clampers?
1. Negative clamper
2. Positive clamper
32. Mention the application of UJT?
1. UJT is mainly used in the triggering of the other devices such as SCR
2. It’s also used for sawtooth wave generator and some timing applications.
3. UJT relaxation ocscillator

1. Explain the construction, equivalent circuit and operation of UJT. Draw the
characteristics of UJT.
2. Explain how UJT is used to generate saw tooth waveform.
3. What is multivibrator? With required diagram, describe the operation and characteristics
of Astable multivibrator and note the applications.
4. What is Schmitt trigger? With required diagram, explain the working principle and give
the applications.
5. Draw the circuit of a monostable multivibrator and explain. (What are the applications of
monostable multivibrator?
6. Describe the operation of UJT and its emitter characteristics. Describe the working of a
Schmitt trigger circuit with the help of necessary waveforms. Discuss any two
applications of Schmitt Trigger.
7. Sketch the response of RC high pass filter for the following inputs and explain.
(1) Ramp
(2) Pulse.
8. (ii) Explain the operation of a bistable multi-vibrator circuit with neat sketch.
9. What are a clipper and clamper? Explain the concept of a positive clipper and a clamper
and its applications
10. Distinguish between Astable and Bistable multivibrators. Mention some applications.