AIN SHAMS UNIVERSITY

Faculty of Engineering
Introduction to Physical Electronics
PHM123
Spring 2024

Problem Set 1: Semiconductors under thermal equilibrium

Question 1
Put (T) on the true statement or (F) on the false statement. You should provide the
correct statement for the false one.
1. The mass action law is valid at thermal equilibrium in intrinsic semiconductor only.
2. The energy gap of a semiconductor material increases with increasing temperature.
3. When an intrinsic semiconductor is doped with ND donors, the new electron concentration is n = ni +
ND .
4. If a semiconductor is doped with ND donor atoms and NA acceptor atoms, the electron concentration
is equal to
1
N D  N A  N D  N A  
2 2
2
n     ni 
2  2  

5. If a semiconductor is doped with ND donor atoms and NA acceptor atoms such that ND =NA then the
equilibrium electron and hole concentrations as given by: n = p = ni .
6. Charge neutrality in a semiconductor at any temperature can be formulated as follows: n + NA= p + ND
7. The intrinsic carrier concentration of a semiconductor increases as its energy gap decreases.
8. The electron and hole concentrations of a silicon wafer doped with 1015cm-3 donor atoms at 250 K is
equal to 1015 and 105 cm-3 respectively.
9. As the temperature increases, the Fermi level in extrinsic semiconductor approaches the intrinsic
level.
10. Silicon is a direct band gap semiconductor material.

Question 2
Choose the correct answer.

1. Doping silicon with Aluminum results in …………..

(a) n-type semiconductor (b) p-type semiconductor
(c) intrinsic semiconductor (d) non-conducting material
2. Doping Germanium with Arsenic results in …………..
(a) n-type semiconductor (b) p-type semiconductor
(c) intrinsic semiconductor (d) non-conducting material
3. Doping silicon with Gallium results in …………..
(a) n-type semiconductor (b) p-type semiconductor
(c) intrinsic semiconductor (d) non-conducting material

1
 4. Doping silicon with phosphorous results in …………..
(a) n-type semiconductor (b) p-type semiconductor
(c) intrinsic semiconductor (d) non-conducting material
5. In an intrinsic semiconductor ……………………..
(a) There is no allowed energy levels between Ec and Ev.
(b) There is an allowed energy level which is little above Ev.
(c) There is an allowed energy level which is little below Ec.
(d) There is an allowed energy level which is near the middle between Ec and Ev .
6. In an n-type semiconductor ……………………..
(a) There is no allowed energy levels between Ec and Ev.
(b) There is an allowed energy level which is little above Ev.
(c) There is an allowed energy level which is little below Ec.
(d) There is an allowed energy level which is near the middle between Ec and Ev .
7. In a p-type semiconductor ……………………..
(a) There is no allowed energy levels between Ec and Ev.
(b) There is an allowed energy level which is little above Ev.
(c) There is an allowed energy level which is little below Ec.
(d) There is an allowed energy level which is near the middle between Ec and Ev .
8. The electron and hole concentrations are equal to zero ……….…….
(a) in an intrinsic semiconductor. (b) in an extrinsic semiconductor.
(c) in a semiconductor at 0 K temperature.
(d) in a semiconductor at very high temperature.
9. In an intrinsic semiconductor, if n and p are the electron and hole concentrations, …...
(a) n must be zero (b) p must be zero
(c) n and p must be equal (d) n and p must not be equal
10. In an n-type semiconductor, if n and p are the electron and hole concentrations, …...
(a) n must be zero (b) p must be zero
(c) n is smaller than p (d) n is larger than p

Question 3
1. Estimate the temperature at which the intrinsic carrier concentration in Si is equal to the intrinsic carrier
concentration in Ge at room temperature.
2. A silicon semiconductor material at T = 300 K is doped with arsenic atoms to a concentration of 2×1015
cm-3 and with boron atoms to a concentration of 1.2×1015 cm-3. (a) Is the material n type or p type? (b)
Determine n and p. (c) Additional boron atoms are to be added such that the hole concentration is
4×1015 cm-3. What concentration of boron atoms must be added and what is the new value of n?
3. In silicon at T = 300 K, it is found that NA = 7×1015 cm-3 and p = 2×104 cm-3. (a) Is the material n type
or p type? (b) What are the majority and minority carrier concentrations? (c) What must be the
concentration of donor impurities?