Professional Documents
Culture Documents
Lecture 3 - Material Properties
Lecture 3 - Material Properties
(ELEC324)
Motivations
Low cost and ease of device fabrication
Flexible and light-weight applications
Large area and high volume market
Good emitters of light including white
Current challenges/bottlenecks
Low charge carrier mobility
Degradation and low lifetime
Parameter spreads
Low resolution of the printing processes (to be discussed in later lecture)
ELEC324 - [2018]
Properties of Organic materials
Organic materials consist of mainly carbon and hydrogen atoms. The key
feature that allows such materials to posses conductive properties is attributed
to the presences of alternating single and double bonds between adjacent
carbon atoms, and conjugation of the carbon atom with adjacent atoms
single bond
The strength of Van der Waals interaction between molecules depends on the
surface area of the molecule i.e. larger area results in stronger interactions
Such intermolecular forces defines the molecule's boiling point, melting point and
solubility i.e. low intermolecular force results in low boiling/melting points
There has been huge demand for development of organic materials with high
solubility in order to adopt low-cost deposition techniques such as printing and
spin-coating processes (discussed in later lecture)
ELEC324 - [2018]
Carbon (building block) in ground state
In order to understand conjugation in organics, we first need to consider the
atomic orbital of Carbon, which has an atomic number 6
Atomic number, also known as proton number, is the number of protons found
in the nucleus. And in an atom of neutral charge, the atomic number is also equal
to the number of electrons around the nucleus. How are such ‘Fermions’ i.e.
electrons, protons and neutrons located?
Also, Pauli’s exclusion principle defines the distribution of such fermions. The
principle states that such particles cannot be in the same location with the same
energy state at the same time i.e. two electrons going around the nucleus can
not be in the exact same state at the same time
ELEC324 - [2018]
Carbon (building block) in ground state
Using Pauli’s exclusion principle, the electronic configuration of carbon in
ground state can be presented as shown on the left-hand side
No of electrons
Coordinate
Each orbital holds two electrons of opposite spin. For carbon, two electrons of
opposite spin occupy the 1s orbital, and the next two occupy the 2s orbital, and the
remaining two electrons are distributed in the p-orbitals i.e. one in px and another in
py leaving pz empty. The shapes of respective orbitals are as shown above
As there are two electrons in the p-orbitals with single electron, this suggests that
carbon is divalent rather than tetravalent as it normally exists. Why?
ELEC324 - [2018]
Carbon in excited state
Carbon is tetravalent rather than divalent as it usually exist in the excited state
where its energy is lower. In excited state, an electron from 2s orbital is promoted
to the empty 2pz orbital
ELEC324 - [2018]
Hybridisation of Orbitals
There are three types of hybridisations:
i. sp1 – occurs when one s-orbital mixes with one p-orbital i.e. pz to form a new sp-
hybrid orbital as shown in example below. Such new hybrid orbitals are stable and
form stronger overlaps with other orbitals as described in next slide
ii. sp2 – occurs when one s-orbital mixes with the two p-orbitals i.e. py and pz to
form two new sp2 hybrid orbitals
iii. sp3 - occurs when one s-orbital mixes with all the three p-orbitals i.e. px, py and
pz, which results in formation of three new sp3 hybrid orbitals
ELEC324 - [2018]
sp2 Hybridisation of orbitals
For carbon, sp2 hybridsation commonly occurs where 2s orbital mixes with the
2px and 2py orbitals resulting in three sp2 hybrid orbitals. Note in this case, the
2pz orbital remains unhybridised (darker grey shading in diagram below)
Hybridised
orbitals
Unhybridised orbital
New sp2 hybrid orbitals lie equidistant from each other at 120o in the x-direction
whilst the pz unhybrid orbital lie perpendicular in z-direction to the hybrid orbitals
Subsequently, such orbitals can then overlap with orbitals of other atoms to form
either a strong sigma () or weak pi () bonds. Note hybrid orbtials form whilst
unhybrid orbitals form bonds
ELEC324 - [2018]
Bonding of Carbon atoms
Consider two atoms of carbon where adjacent unhybridised pz-orbitals overlap either
constructively or destructively to form -bonds, resulting in discrete energy levels
compromising of the so-called Highest occupied molecular orbital (HOMO) and
Lowest unoccupied molecular orbital (LUMO) or the - * respectively. Such overlap
of unhybridised pz orbitals between adjacent carbon atoms is known as Conjugation
Two electrons of
C1 C2 opposite spin in
C1 Bonding between C2
Source: http://www.orgworld.de/ two carbons
ELEC324 - [2018]
Bonding in Conjugated polymer
Conjugated polymers, such as Poly(p-phenylene) (PPV) shown below, consists
of a rigid rod host polymer with much higher number of carbon atoms. In the
example below, the monomer unit consists of 8 electrons in the pz orbitals
however this is a multiple n depending on the number of repeated monomer unit
ELEC324 - [2018]
Energy Bands
Below shows an example of another conjugated polymer, Polythiophene. As the
number of repeated monomer units increases, equivalent energy bands are formed
LUMO (*) and HOMO () are equivalent to conduction and valence band in
inorganic semiconductors but with much narrower widths
Energy gap between LUMO and HOMO is considered the band gap (Eg) with
typical values ranging between 1.8 – 2 eV (note in silicon Eg = 1.166 eV)
ELEC324 - [2018]
Density of States (DOS) Distributions
In solid state, it is essential to determine the distribution of the carriers (i.e. holes
and/or electrons), with respect to energy within the different bands (i.e. LUMO
and HOMO)
In organics, the DOS function which describes the number of states per energy
interval at a given energy level, can be given by either of the following functions,
as discussed in the next slides:
i. Gaussian distribution (or exponential approximate)
ii. Laplace distribution
Note for amorphous silicon, the DOS is also described by an exponential function
whilst for crystalline silicon, the DOS is described by a parabolic function
ELEC324 - [2018]
i. Gaussian Distribution for DOS (intrinsic)
Density of states N(E) in disordered organic
semiconductor consists of discrete levels,
commonly described by a Gaussian1-2 distribution
with respect to energy E, in both HOMO and LUMO
levels (as shown in the diagram)
Gaussian distribution describing the DOS has a
simple form of:
No E 2
N E
Eg intrinsic states
exp 2
2 2
electron energy
(either as donor or acceptor)
hole energy
determining the carrier concentration using
the Gaussian expression (as described later
involving integration) can be cumbersome
ELEC324 - [2018]
Exponential approximate at Gaussian tails
Focusing on LUMO level only (note this applies to HOMO level too), the tail of the
Gaussian at low energies (where the conduction occurs) can be assumed to follow
an exponential3 function of the form:
not squared dependency on the energy
E
N ' E N ' 0 exp
C
kT
E
N ' E N ' 0 exp
C
kT
Such that,
E
log e N ' E log e N 0
kTc
Assuming a typical value for TC we can fit these in the Gaussian function as in
the next slide
ELEC324 - [2018]
Exponential fits to the Gaussian
Exponential lines fit to the Gaussian function only at certain energies.
The slope of the fitted line corresponds to typical values of TC = 425k or MNE
(kTC /q) of 38 meV as observed in real devices. (Note for ordered silicon the
value of kT/q ~ 26 meV)
(Log scale)
Density of states, N(E)
Gaussian
distribution
exponential
fits
Energy, E
As the fits are only applicable in smaller energy ranges, it is thus erroneous to
apply this approximation to devices that operate at high voltages such as diodes
ELEC324 - [2018]
ii. Laplace Distribution for DOS
Due to the limitation of fitting the exponential
over a wider energy range onto the Gaussian
distribution (L2), other distributions are thus
explored such as the Laplace (L1) distribution
extrinsic states
The Laplace distribution describing the DOS
can have a simple form:
N (0) E
N E
'
exp
kTc c
kT
ELEC324 - [2018]
b. Laplace Distribution for DOS
Better fits obtained to L1 rather than L2 for wider energy ranges, which
corresponds to applied voltages in devices
e.g. typical voltages in Schottky diodes is 5 V (in exponential region) and in TFTs is 1 V
(in sub-threshold). These regions correspond to exponential dependency of carrier
concentration with voltage
ELEC324 - [2018]
Summary
Conjugation or overlap of the unhybridised pz orbitals between carbon
atoms results in formation of equivalent energy bands i.e. HUMO and
LUMO
ELEC324 - [2018]
Revision Questions
1. Describe how organic materials can constitute to semiconducting properties
Next lecture
Distribution functions i.e. how many states are filled with electrons
ELEC324 - [2018]
References
1. H. Bässler, Phys. Stat. Sol. (B), vol. 175, pp. 15, 1993
H. Bässler, Phil. Mag. B, vol. 50, pp. 347, 1984
2. Y. Roichman et. al., Physica Status Solidi A -Applied Research, vol. 201, pp. 1246, 2004
3. M. Vissenberg and M. Matters, Physical Review B, vol. 57, pp. 12964-12967, 1998
4. W. Meyer and H. Neldel, Z. Tech. Phys. (Leipzig), vol. 18, pp. 588, 1937
5. S. Kolt et. al., “The Laplace distribution & generalisations”, Birkhauser Bosont 2001.
ELEC324 - [2018]