Design Application Note -- AN021

SGA-9189 Amplifier Application Circuits

Abstract Design Considerations and Trade-offs

Sirenza Microdevices’ SGA-9189 is a high perfor- - Biasing Techniques
mance SiGe amplifier designed for operation from DC These SiGe HBT amplifiers exhibit a “soft” breakdown
to 3500 MHz. This application note illustrates several effect (VBCEO=7.5V minimum) which allows for large
application circuits for key frequency bands in the signal operation at VCE=5V. The user should insure
800-2500 MHz spectrum. that under large signal conditions, the source and load
impedances presented to the device don’t result in
Introduction excessive collector currents near breakdown.
The application circuits were designed to achieve the
optimum combination of P1dB and OIP3, while main- All HBT amplifiers are subject to device current varia-
taining flat gain and reasonable return losses. Special tion due to the decreasing nature of the internal VBE
consideration was given to insure amplifier stability at with increasing temperature. In the absence of an
low frequencies, where the device exhibits high gain. active bias circuit or resistive feedback, the decreas-
These designs were created to illustrate the general ing VBE will result in increased base and collector cur-
performance capabilities of the the device under CW rents. As the collector current continues to increase
conditions. Users may wish to modify these designs under constant VCE conditions, the device may even-
to achieve optimum performance under specific input tually exceed its maximum dissipated power limit
conditions and system requirements. resulting in permanent device damage. The designs
included in this application note contain passive bias
The circuits contain only surface mountable parts and circuits that stabilize the device current over tempera-
were designed with automated manufacturing require- ture and desensitize the circuit to device process vari-
ments in mind. All recommended components are ation.
standard values available from multiple manufactur-
ers. The components specified in the bill of materials The passive bias circuits used in these designs
(BOM) have know parasitics, which in some cases are include a dropping resistor in the collector bias line
critical to the circuit’s performance. Deviating from the and a voltage divider from the collector-to-base.
recommended BOM may result in a performance shift Using this scheme, the amplifier can be biased from a
due to varying parasitics - primarily in the inductors single supply voltage. The collector dropping resistor
and capacitors. is sized to drop 2-3V, depending on the desired VCE.
The voltage divider from collector-to-base, in conjunc-
Circuit Details tion with the dropping resistor, will stabilize the device
SMDI will provide the detailed layout (AutoCAD for- current over temperature. Configuring the voltage
mat) to users wishing to use the exact same layout divider such that the shunt current is 5-10 times larger
and PCB material shown in the following circuits. The than the desired base current desensitizes the circuit
circuits recommended within this application note to beta variation. These two feedback mechanisms
were designed using the following PCB stack up: are sufficient to insure consistent performance over
Material: GETEKTM ML 200C temperature and device process variations. Note that
Core thickness: 0.031” the voltage drop is clearly dependent on the nominal
Copper cladding: 1 oz. both sides collector current and can be adjusted to generate the
Dielectric constant: 4.1 desired VCE from a fixed supply rail. The user should
Dielectric loss tangent: 0.0089 (@ 1 GHz) test the circuit over the operational extremes to guar-
Customers not wishing to use the exact material and antee adequate performance. An active bias circuit
layouts shown in this application note can design their can be implemented if the user does not wish to sacri-
own PCB using the critical transmission line imped- fice the voltage required by the aforementioned pas-
ances and phase lengths shown in the BOMs and lay- sive circuit. There are various active bias schemes
outs.

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product
for use in life-support devices and/or systems.
Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com
1 EAN-101534 Rev C
 Design Application Note -- AN021
SGA-9189 Amplifier Application Circuits

suitable for HBTs. The user should choose an active - Mounting and Thermal Consideration
bias circuit that best meets his/her cost, complexity, It is very important that adequate heat sinking be pro-
and performance requirements. vided to minimize the device junction temperature.
The following items should be implemented to maxi-
mize MTTF and RF performance.
Vcc
1. Multiple plated-thru vias are required directly
below the ground tab (pin 4). [CRITICAL]
+ 2. Incorporate a large ground pad area with multiple
VDROP
plated-through vias around pin 4 of the device.
-
[CRITICAL]
3. Use two point board seating to lower the thermal
Ic resistance betwee the PCB and mounting plate.
IB
+ Place machine screws as close to the ground tab
VCE (pin 4) as possible. [RECOMMENDED]
ISHUNT
- 4. Use 2 ounce copper to improve the PCB’s heat
spreading capability. [RECOMMENDED]
5. Thermal transfer paste should be used between
the PCB and the mounting plate to improve heat
Passive Bias Circuit Topology spreading capability. [RECOMMENDED]

Vs
Ground Plane
6 R4
Q1a 2

1 Plated Thru
C4 Holes
R3 (0.020" DIA)
R2 R5 R6
5 SOT-89
R1 3 4 Package
Q1b C5

C3
C6
L2 Machine
Screws
L1

SGA-9189

Active Bias Circuit Topology Recommended Mounting Configuration

522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com

2 EAN-101534 Rev C
 Design Application Note -- AN021
SGA-9189 Amplifier Application Circuits

870-960 MHz Application Circuit (VS=8V, VCE=5V, ICQ=185mA)

Vs=8.0V
GND
185mA

10Ω
30Ω
270Ω

33Ω

56Ω

0.1uF
51Ω 0.1uF

39pF 39pF

82nH 82nH
4.7pF 5.6pF
68pF 68pF

4.7nH 5.6pF 6.8nH

RFin RFout

SIRENZA MICRODEVICES
SOT-89 Eval Board
ECB-102216-B

Ref. Des. Part Number Value Ref. Des. Part Number Value
C1, C9 ROHM MCH185A680JK 68pF R5 ROHM MCR50J300 30 Ω
C2 ROHM MCH185A4R7CK 4.7pF R6 ROHM MCR50J330 33 Ω
C3, C8 ROHM MCH185A5R6DK 5.6pF Z1 non-critical 50 Ω
C4, C7 ROHM MCH185A390JK 39pF Z2 2.3 degrees @ 900 MHz 50 Ω
C5, C6 Samsung CL10B104KONC 0.1uF Z3 2.7 degrees @ 900 MHz 50 Ω
L1, L3 TOKO LL1608-FS82NJ 82nH Z4 1.1 degrees @ 900 MHz 50 Ω
L2 TOKO LL1608-FS4N7S 4.7nH Z5 5.1 degrees @ 900 MHz 50 Ω
L4 TOKO LL1608-FS6N8J 6.8nH Z6 6.2 degrees @ 900 MHz 50 Ω
R1 ROHM MCR03J510 51 Ω Z7 2.6 degrees @ 900 MHz 50 Ω
R2 ROHM MCR03J560 56 Ω Z8 2.1 degrees @ 900 MHz 50 Ω
R3 ROHM MCR03J271 270 Ω Z9 non-critical 50 Ω
R4 ROHM MCR03J100 10 Ω

SGA-9189 870-960 MHz Schematic

C5 R5
Vs
R3 R4
C6
R6
R2
R1
C7

C4

L3

C8 C9
L1
Z6 Z7 Z8 Z9
C1 C2
Z1 Z2 Z3 Z4 Z5
SGA-9189
L4

L2 C3

522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com

3 EAN-101534 Rev C
 Design Application Note -- AN021
SGA-9189 Amplifier Application Circuits

Typical Performance: 870-960 MHz Application Circuit (VS=8V, VCE=5V, ICQ=185mA)

Gain vs. Frequency
P1dB vs. Frequency
22
30

20
28

26 18
dBm

dB
24 16
25C 25C
-40C -40C
22 14
85C 85C

20 12
0.8 0.84 0.88 0.92 0.96 0.8 0.84 0.88 0.92 0.96
GHz GHz

Input/Output Return Loss, OIP3 vs. Frequency

Isolation vs. Frequency at 25C 45

0 42
S11
-5
S22 39
-10
dBm

S12
dB

-15 36
25C
-20 -40C
33
-25 85C

-30 30
0.8 0.84 0.88 0.92 0.96 0.8 0.84 0.88 0.92 0.96
GHz GHz

Noise Figure vs. Frequency at 25C 880 MHz Adjacent Channel Power vs.
Channel Output Power at 25C
5
-40
Adjacent Channel Pwr (dBc)

4 -45

3 -50
dB

-55
2
-60

1 -65

-70
0
10 12 14 16 18 20 22
0.8 0.84 0.88 0.92 0.96
Channel Output Pwr (dBm)
GHz IS-95, 9 Channels Forward

Freq (GHz) P1dB (dBm) OIP3 (dBm) Gain (dB) S11 (dB) S22 (dB) NF (dB)
0.880 25.7 40.1 19.3 -20 -14 2.0
0.920 25.8 39.8 19.1 -17 -25 2.1
0.960 25.8 39.2 18.6 -12 -21 2.1

522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com

4 EAN-101534 Rev C
 Design Application Note -- AN021
SGA-9189 Amplifier Application Circuits
1930-1990 MHz Application Circuit (VS=8V, VCE=5V, ICQ=185mA)

Vs=8.0V
GND
185mA

10Ω
33Ω
270Ω

30Ω

56Ω

0.1uF
0.1uF
51Ω
15pF
15pF
12nH 22nH
1.5pF
1.5pF 4.7pF

1.8pF 2.7nH

RFin RFout

SIRENZA MICRODEVICES
SOT-89 Eval Board
ECB-102216-B

Ref. Des. Part Number Value Ref. Des. Part Number Value

C1, C7 ROHM MCH185A1R5CK 1.5pF R4 ROHM MCR03J100 10 Ω

C2 ROHM MCH185A1R8CK 1.8pF R5 ROHM MCR50J300 30 Ω

C3, C6 ROHM MCH185A150JK 15pF R6 ROHM MCR50J330 33 Ω

C4, C5 Samsung CL10B104KONC 0.1uF Z1 4.9 degrees @ 1960 MHz 50 Ω

C8 ROHM MCH185A4R7CK 4.7pF Z2 3.2 degrees @ 1960 MHz 50 Ω

L1 TOKO LL1608-FS12NJ 12nH Z3 10.4 degrees @ 1960 MHz 50 Ω

L2 TOKO LL1608-FS22NJ 22nH Z4 13.1 degrees @ 1960 MHz 50 Ω

L3 TOKO LL1608-FS2N7S 2.7nH Z5 4.7 degrees @ 1960 MHz 50 Ω

R1 ROHM MCR03J510 51 Ω Z6 7.0 degrees @ 1960 MHz 50 Ω

R2 ROHM MCR03J560 56 Ω Z7 6.3 degrees @ 1960 MHz 50 Ω

R3 ROHM MCR03J271 270 Ω

SGA-9189 1930-1990 MHz Schematic

Vs

R1 R3 R4 R5

C3
C5
C4 R6
R2

C6

L2

C7 C8
L1
Z4 Z5 Z6 Z7
C1

Z1 Z2 Z3
SGA-9189
L3

C2

522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com

5 EAN-101534 Rev C
 Design Application Note -- AN021
SGA-9189 Amplifier Application Circuits
Typical Performance: 1930-1990 MHz Application Circuit (VS=8V, VCE=5V, ICQ=185mA)

P1dB vs. Frequency Gain vs. Frequency

30 15

28 13

26 11
dBm

dB
24 9
25C 25C
22 -40C 7 -40C
85C 85C
20 5
1.93 1.94 1.95 1.96 1.97 1.98 1.99 1.93 1.94 1.95 1.96 1.97 1.98 1.99
GHz GHz

Input/Output Return Loss, OIP3 vs. Frequency

Isolation vs. Frequency at 25C 45
0
S11 42
-5
S22
-10 S12 39
dBm

-15
dB

36
-20 25C
33 -40C
-25
85C
-30 30
1.93 1.94 1.95 1.96 1.97 1.98 1.99 1.93 1.94 1.95 1.96 1.97 1.98 1.99
GHz GHz

Noise Figure vs. Frequency at 25C 1960 MHz Adjacent Channel Power vs.
5 Channel Output Power at 25C
-40
Adjacent Channel Power

4 -45

-50
3
(dBc)

-55
dB

2 -60

-65
1
-70
0 10 12 14 16 18 20 22
1.93 1.94 1.95 1.96 1.97 1.98 1.99 Channel Output Pwr (dBm)
GHz IS-95, 9 Channels Forward

Freq (GHz) P1dB (dBm) OIP3 (dBm) Gain (dB) S11 (dB) S22 (dB) NF (dB)
1.93 25.5 40 12.3 -20 -25 2.4
1.96 25.5 40 12.2 -25 -21 2.4
1.99 25.5 39.8 12.1 -22 -17 2.5

522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com

6 EAN-101534 Rev C
 Design Application Note -- AN021
SGA-9189 Amplifier Application Circuits
2110-2170 MHz Application Circuit (VS=8V, VCE=5V, ICQ=185mA)

Vs=8.0V
GND
185mA

10Ω
33Ω
270Ω

30Ω

56Ω

0.1uF

51Ω
0.1uF
10pF
10pF
18nH
1.5pF
1.2pF 18nH 10pF

1.5pF 2.2nH

RFin RFout

SIRENZA MICRODEVICES
SOT-89 Eval Board
ECB-102216-B

Ref. Des. Part Number Value Ref. Des. Part Number Value

C1, C7 ROHM MCH185A1R5CK 1.5pF R5 ROHM MCR50J300 30 Ω

C2 ROHM MCH185A1R2CK 1.2pF R6 ROHM MCR50J330 33 Ω

C3, C6, C8 ROHM MCH185A100DK 10pF Z1 4.6 degrees @ 2140 MHz 50 Ω

C4, C5 Samsung CL10B104KONC 0.1uF Z2 27.9 degrees @ 2140 MHz 50 Ω

L1, L2 TOKO LL1608-FS18NJ 18nH Z3 14.8 degrees @ 2140 MHz 50 Ω

L3 TOKO LL1608-FS2N2S 2.2nH Z4 14.7 degrees @ 2140 MHz 50 Ω

R1 ROHM MCR03J510 51 Ω Z5 5.2 degrees @ 2140 MHz 50 Ω

R2 ROHM MCR03J560 56 Ω Z6 4.9 degrees @ 2140 MHz 50 Ω

R3 ROHM MCR03J271 270 Ω Z7 non-critical 50 Ω

R4 ROHM MCR03J100 10 Ω

SGA-9189 2110-2170 MHz Schematic

Vs
C4 R3 R4 R5

C5 R6
R2
R1
C6

C3

L2

C7 C8
L1
C2 Z4 Z5 Z6 Z7

Z1 Z2 Z3
SGA-9189 L3

C1

522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com

7 EAN-101534 Rev C
 Design Application Note -- AN021
SGA-9189 Amplifier Application Circuits
Typical Performance: 2110-2170 MHz Application Circuit (VS=8V, VCE=5V, ICQ=185mA, 25C)

P1dB vs. Frequency Gain vs. Frequency

30
15

28 13

26 11
dBm

dB
24 9

22 7

20 5
2.11 2.12 2.13 2.14 2.15 2.16 2.17
2.11 2.12 2.13 2.14 2.15 2.16 2.17
GHz GHz

Input/Output Return Loss, OIP3 vs. Frequency

Isolation vs. Frequency 45
0
S11
-5 42
S22
S12
-10 39
dBm
dB

-15
36
-20

-25 33

-30 30
2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.11 2.12 2.13 2.14 2.15 2.16 2.17
GHz GHz

Noise Figure vs. Frequency 2140 MHz Adjacent Channel Power vs.
5 Channel Output Power
-40
Adjacent Channel Power

4
-45
3
(dBc)

-50
dB

2
-55
1

-60
0 13 14 15 16 17
2.11 2.12 2.13 2.14 2.15 2.16 2.17 Channel Output Pwr (dBm)
GHz W-CDMA, 64 DPCH + Overhead

Freq (GHz) P1dB (dBm) OIP3 (dBm) Gain (dB) S11 (dB) S22 (dB) NF (dB)
2.11 25.5 39.4 11.4 -19 -16 2.5
2.14 25.4 38.9 11.3 -20 -19 2.6
2.17 25.2 38.4 11.1 -15 -18 2.7

522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com

8 EAN-101534 Rev C
 Design Application Note -- AN021
SGA-9189 Amplifier Application Circuits

2400-2500 MHz Application Circuit (VS=8V, VCE=5V, ICQ=185mA)

Vs=8.0V
GND 185mA

10Ω
33Ω
270 Ω

30Ω

56Ω

0.1uF
0.1uF
51Ω
10pF
10pF
12nH 12nH

1.0pF 1.5pF

1.0pF

RFin RFout

SIRENZA MICRODEVICES
SOT-89 Eval Board
ECB-102216-B

Ref. Des. Part Number Value Ref. Des. Part Number Value

C1, C2 ROHM MCH185A010CK 1.0pF R5 ROHM MCR50J300 30 Ω

C7 ROHM MCH185A1R5CK 1.5pF R6 ROHM MCR50J330 33 Ω

C3, C6 ROHM MCH185A100DK 10pF Z1 8.6 degrees @ 2450 MHz 50 Ω

C4, C5 Samsung CL10B104KONC 0.1uF Z2 6.5 degrees @ 2450 MHz 50 Ω

L1, L2 TOKO LL1608-FS12NJ 12nH Z3 10.5 degrees @ 2450 MHz 50 Ω

R1 ROHM MCR03J510 51 Ω Z4 16.4 degrees @ 2450 MHz 50 Ω

R2 ROHM MCR03J560 56 Ω Z5 28.8 degrees @ 2450 MHz 50 Ω

R3 ROHM MCR03J271 270 Ω

R4 ROHM MCR03J100 10 Ω

SGA-9189 2400-2500 MHz Schematic

Vs

R3 R4 R5

C4
C5
R6
R2

C6
R1
C3

L2

C7
L1
C1 Z4 Z5

Z1 Z2 Z3
SGA-9189

C2

522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com

9 EAN-101534 Rev C
 Design Application Note -- AN021
SGA-9189 Amplifier Application Circuits
Typical Performance: 2400-2500 MHz Application Circuit (VS=8V, VCE=5V, ICQ=185mA, 25C)

P1dB vs. Frequency Gain vs. Frequency

30 15

28 13

26 11
dBm

dB
24 9

22 7

20 5
2.4 2.42 2.44 2.46 2.48 2.5 2.4 2.42 2.44 2.46 2.48 2.5
GHz GHz

Input/Output Return Loss, OIP3 vs. Frequency

Isolation vs. Frequency
45
0
S11 42
-5 S12
-10 S22 39
dBm
dB

-15
36
-20
33
-25

-30 30
2.4 2.42 2.44 2.46 2.48 2.5 2.4 2.42 2.44 2.46 2.48 2.5
GHz GHz

Noise Figure vs. Frequency

5

3
dB

0
2.4 2.42 2.44 2.46 2.48 2.5
GHz

Freq (GHz) P1dB (dBm) OIP3 (dBm) Gain (dB) S11 (dB) S22 (dB) NF (dB)
2.40 25.3 40.0 10.3 -20 -19 2.6
2.45 25.4 39.9 10.2 -20 -17 2.7
2.50 25.4 39.8 10.0 -17 -16 2.8

522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com

10 EAN-101534 Rev C