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Irf 9630
Irf 9630
www.vishay.com
Vishay Siliconix
Power MOSFET
S
FEATURES
• Dynamic dV/dt rating
TO-220AB Available
• Repetitive avalanche rated
G
• P-channel Available
• Fast switching
• Ease of paralleling
• Simple drive requirements
S
D • Material categorization: for definitions of compliance
G D
please see www.vishay.com/doc?99912
P-Channel MOSFET Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
PRODUCT SUMMARY example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
VDS (V) -200
RDS(on) max. (Ω) VGS = -10 V 0.80 DESCRIPTION
Qg max. (nC) 29
Third generation power MOSFETs from Vishay provide the
Qgs (nC) 5.4 designer with the best combination of fast switching,
Qgd (nC) 15 ruggedized device design, low on-resistance and
Configuration Single cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free IRF9630PbF
Lead (Pb)-free and halogen-free IRF9630PbF-BE3
- 7.0 V
- 6.0 V 2.0
(Normalized)
- 5.5 V
- 5.0 V
- 4.5 V 1.5
Bottom - 4.5 V
100
1.0
0.5
20 µs Pulse Width
TC = 25 °C
10-1 0.0
10-1 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91084_01 - VDS, Drain-to-Source Voltage (V) 91084_04 TJ, Junction Temperature (°C)
1200
VGS = 0 V, f = 1 MHz
VGS Ciss = Cgs + Cgd, Cds Shorted
Top - 15 V 1000 Crss = Cgd
101 - 10 V Coss = Cds + Cgd
Capacitance (pF)
- 8.0 V
- ID, Drain Current (A)
800
- 7.0 V Ciss
- 6.0 V
- 5.5 V - 4.5 V 600
- 5.0 V
Bottom - 4.5 V
100 400
Coss
200
Crss
20 µs Pulse Width
0
TC = 150 °C
10-1 100 101
10-1 100 101
91084_05 - VDS, Drain-to-Source Voltage (V)
91084_02 - VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
ID = - 6.5 A
- VGS, Gate-to-Source Voltage (V)
VDS = - 160 V
16
- ID, Drain Current (A)
100
4
20 µs Pulse Width For test circuit
VDS = - 50 V see figure 13
0
4 5 6 7 8 9 10 0 5 10 15 20 25 30
91084_03 - VGS, Gate-to-Source Voltage (V) 91084_06 QG, Total Gate Charge (nC)
Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
7.0
- ISD, Reverse Drain Current (A)
101 6.0
100 3.0
2.0
1.0
VGS = 0 V
10-1 0.0
0.5 1.5 2.5 3.5 4.5 25 50 75 100 125 150
91084_07 - VSD, Source-to-Drain Voltage (V) 91084_09 TC, Case Temperature (°C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature
RD
103 VDS
Operation in this area limited
5
by RDS(on)
2
VGS
D.U.T.
- ID, Drain Current (A)
102 RG
+
5 - VDD
2
10 µs
- 10 V
10 100 µs
Pulse width ≤ 1 µs
5
Duty factor ≤ 0.1 %
1 ms
2
10
Thermal Response (ZthJC)
1 D = 0.5
0.2 PDM
0.1
0.1 0.05 t1
0.02 t2
0.01 Single Pulse Notes:
(Thermal Response) 1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5 10-4 10-3 10-2 0.1 1 10
L IAS
VDS
Vary tp to obtain
required IAS
VDS
RG D.U.T
-
+ V DD
IAS VDD
- 10 V tp
tp 0.01 Ω A
VDS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
1200
ID
EAS, Single Pulse Energy (mJ)
Top - 2.9 A
1000 - 4.1 A
Bottom - 6.5 A
800
600
400
200
VDD = - 50 V
0
25 50 75 100 125 150
Current regulator
Same type as D.U.T.
QG 50 kΩ
- 10 V 12 V 0.2 µF
0.3 µF
QGS QGD -
D.U.T. + VDS
VG
VGS
- 3 mA
Charge
IG ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13c - Gate Charge Test Circuit
- - +
Rg • dV/dt controlled by Rg +
• ISD controlled by duty factor “D” VDD
• D.U.T. - device under test -
Note
• Compliment N-Channel of D.U.T. for driver
VGS = - 10 Va
Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91084.
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