Diode Simulation Comsuol

Untitled
Report date May 14, 2024, 5:45:42 PM
1
Contents
1. Global Definitions................................................................................................................................
1.1. Parameters.......................................................................................................................................................................
1.2. Shared Properties.........................................................................................................................................................
2. Component 1........................................................................................................................................
2.1. Definitions........................................................................................................................................................................
2.2. Geometry 1......................................................................................................................................................................
2.3. Materials...........................................................................................................................................................................
2.4. Semiconductor...............................................................................................................................................................
2.5. Mesh 1...............................................................................................................................................................................
3. Study 1..................................................................................................................................................
3.1. Time Dependent............................................................................................................................................................
3.2. Solver Configurations..................................................................................................................................................
4. Results...................................................................................................................................................
4.1. Datasets............................................................................................................................................................................
4.2. Tables.................................................................................................................................................................................
4.3. Plot Groups......................................................................................................................................................................
2
1 Global Definitions
Date May 14, 2024, 3:47:50 PM
GLOBAL SETTINGS
Name Untitled.mph
COMSOL Multiphysics 6.1 (Build:
Version
282)
Unit system SI
USED PRODUCTS
Semiconductor Module
COMSOL Multiphysics
COMPUTER INFORMATION
CPU Intel64 Family 6 Model 141 Stepping 1, 8 cores, 23.71 GB RAM
Operating system Windows 10
1.1 PARAMETERS
PARAMETERS 1
Expressio Descriptio
Name Value
n n
Va 0[V] 0V
1.2 SHARED PROPERTIES
1.2.1 Default Model Inputs

Tag cminpt
3
2 Component 1
Date May 14, 2024, 3:47:51 PM
SETTINGS
Description Value
Unit system Same as global system (SI)
Geometry shape
Automatic
function
SPATIAL FRAME COORDINATES

Secon
First Third
d
x y z
MATERIAL FRAME COORDINATES

Secon
First Third
d
X Y Z
GEOMETRY FRAME COORDINATES

Secon
First Third
d
Xg Yg Zg
MESH FRAME COORDINATES

Secon
First Third
d
Xm Ym Zm
2.1 DEFINITIONS
2.1.1 Coordinate Systems
Boundary System 1
Coordinate system Boundary

type system
Tag sys1
4
COORDINATE NAMES
Secon
First Third
d
t1 n to
2.2 GEOMETRY 1
Geometry 1
UNITS
Length unit µm
Angular unit deg
GEOMETRY STATISTICS
Description Value
Space dimension 2
Number of domains 1
Number of
4
boundaries
Number of vertices 4
2.2.1 Rectangle 1 (r1)
POSITION
5
Descriptio
Value
n
Position {0, 0}
SIZE
Descriptio
Value
n
Width 5
Height 10
2.3 MATERIALS
2.3.1 Si - Silicon
Si - Silicon
SELECTION
Geometric entity level Domain
Geometry geom1: Dimension 2:
Selection
Domain 1
MATERIAL PARAMETERS
Name Value Unit Property group
Relative
11.7 1 Basic
permittivity
Electron 1E-5 s Shockley-Read-
6
Name Value Unit Property group
Hall
lifetime, SRH
recombination
Shockley-Read-
Hole lifetime,
1E-5 s Hall
SRH
recombination
Semiconductor
Band gap 1.12 V
material
Semiconductor
Electron affinity 4.05 V
material
Effective
density of Semiconductor
1.0399999999999997E25*(T/300)^1.5 1/m³
states, valence material
band
Effective
density of
Semiconductor
states, 2.7999999999999997E25*(T/300)^1.5 1/m³
material
conduction
band
Electron Semiconductor
0.145 m²/(V·s)
mobility material
Semiconductor
Hole mobility 0.05 m²/(V·s)
material
BASIC
Description Value
Relative permittivity 11.7
SHOCKLEY-READ-HALL RECOMBINATION
Description Value Unit
Electron lifetime, SRH 1E-5 s
Hole lifetime, SRH 1E-5 s
SEMICONDUCTOR MATERIAL
Band gap 1.12 V
Electron
4.05 V
affinity
Effective 1.0399999999999997E25*(T/300)^1.5 1/m³
density of
states, valence
7
band
Effective
density of
states, 2.7999999999999997E25*(T/300)^1.5 1/m³
conduction
band
Electron
0.145 m²/(V·s)
mobility
Hole mobility 0.05 m²/(V·s)
2.4 SEMICONDUCTOR
USED PRODUCTS
Semiconductor Module
COMSOL Multiphysics
Semiconductor
SELECTION
Selection Geometry geom1: Dimension 2: All domains
EQUATIONS
8
2.4.1 Interface Settings
Physics Symbols
SETTINGS
Description Value
Enable physics
Off
symbols
Discretization
SETTINGS
Descriptio
Value
n
Formulatio
Finite volume (constant shape function)
n
SETTINGS
Description Value
Equation
Study controlled
form
SETTINGS
Out-of-plane
1E-6 m
thickness
Model Properties
SETTINGS
Description Value
Maxwell -
Carrier statistics
Boltzmann
Solution Electrons and holes
Continuation Settings
SETTINGS
Description Value
Interface continuation parameter 1
Doping and trap density continuation parameter No
9
Description Value
continuation
2.4.2 Variables
Name Expression Unit Description Selection Details
(semi.epsilonrXX+se Relative
semi.epsilonrs mi.epsilonrYY+semi. 1 permittivity, Domain 1
epsilonrZZ)/3 scalar
Space charge
semi.rho 0 C/m³ Domain 1 + operation
density
Surface charge Boundaries
semi.rho_s 0 C/m² + operation
density 1–4
Outward normal
Boundaries
semi.dnD_dt d(semi.nD,t) A/m² displacement
1–4
current density
nojac(semi.minsemi(
Minimum
semi.min_h sqrt(sqrt(1/ m Global
element size
emetric2))))
Exterior normal
Boundaries
semi.ngX dnXmesh 1 vector, X-
1–4
component
Exterior normal
Boundaries
semi.ngY dnYmesh 1 vector, Y-
1–4
component
Exterior normal
Boundaries
semi.ngZ 0 1 vector, Z-
1–4
component
Down normal
vector on mesh
semi.dngX dnXmesh 1 Global
boundaries, X-
component
Down normal
vector on mesh
semi.dngY dnYmesh 1 Global
boundaries, Y-
component
Down normal
vector on mesh
semi.dngZ 0 1 Global
boundaries, Z-
component
semi.ungX unXmesh 1 Up normal Global
vector on mesh
boundaries, X-
10
component
Up normal
vector on mesh
semi.ungY unYmesh 1 Global
boundaries, Y-
component
Up normal
vector on mesh
semi.ungZ 0 1 Global
boundaries, Z-
component
Position vector,
semi.rX X m Global
X-component
Position vector,
semi.rY Y m Global
Y-component
Position vector,
semi.rZ 0 m Global
Z-component
down(semi.rX-
circumcenter(semi.rX
[1/m])
[m])*semi.dngX+do
wn(semi.rY- Local boundary
circumcenter(semi.rY mesh distance,
semi.dc_down m Global
[1/m]) downside
[m])*semi.dngY+dow element
n(semi.rZ-
circumcenter(semi.rZ
[1/m])
[m])*semi.dngZ
up(semi.rX-
[1/m])
[m])*semi.ungX+up(s
emi.rY-
Local boundary
circumcenter(semi.rY
semi.dc_up m mesh distance, Global
[1/m])
upside element
[m])*semi.ungY+up(s
emi.rZ-
[1/m])
[m])*semi.ungZ
if(abs(semi.dc_n_bnd
Local exterior
)<semi.dc_tol,if(sign(
boundary
semi.dc_n_bnd)==0,s Boundaries
semi.dc_n m distance at
emi.dc_tol,sign(semi. 1–4
domain edge,
dc_n_bnd)*semi.dc_t
(numerical)
ol),semi.dc_n_bnd)
11
down(semi.rX-
[1/m])
[m])*semi.ngX+dow
Local exterior
n(semi.rY-
boundary Boundaries
semi.dc_n_bnd circumcenter(semi.rY m
distance at 1–4
[1/m])
domain edge
[m])*semi.ngY+down
(semi.rZ-
[1/m])[m])*semi.ngZ
if(abs(semi.dc_down)
Local boundary
<semi.dc_tol,if(sign(s
mesh distance,
semi.dc_down_b emi.dc_down)==0,se
m downside Global
nd mi.dc_tol,sign(semi.d
element (used
c_down)*semi.dc_tol)
on boundaries)
,semi.dc_down)
if(abs(semi.dc_up)<s
Local boundary
emi.dc_tol,if(sign(se
mesh distance,
mi.dc_up)==0,semi.d
semi.dc_up_bnd m upside element Global
c_tol,sign(semi.dc_up
(used on
)*semi.dc_tol),semi.d
boundaries)
c_up)
if(abs(semi.dc_down
+semi.dc_up)<semi.
Distance
dc_tol,if(sign(semi.dc
between
_down+semi.dc_up)
circumcenters at
semi.dc_tot ==0,semi.dc_tol,sign m Global
interior
(semi.dc_down+semi
boundary,
.dc_up)*semi.dc_tol),
(numerical)
semi.dc_down+semi.
dc_up)
Global tolerance
for finite volume
fluxes (variable is
replaced in
semi.global_flux_ subsequent
1.0E-4 1 Global
tol_cd semiconductor
material model
or charge
conservation
features)
Local boundary
semi.min_h*semi.glo
semi.dc_tol m mesh distance Global
bal_flux_tol_cd
tolerance
12
Tolerance for
semi.delta_eta_t
1.0E-9 1 optimal average Global
ol
Gn Gp value
Equivalent
semi.epsilonr_do relative
down(semi.epsilonrs) 1 Global
wn permittivity,
downside
Equivalent
relative
semi.epsilonr_up up(semi.epsilonrs) 1 Global
permittivity,
upside
semi.epsilonr_down* Denominator for
semi.E_cd_deno semi.dc_up+semi.ep centered
m Global
m silonr_up*semi.dc_do difference
wn scheme
if(abs(semi.E_cd_den
om)<semi.dc_tol,if(si Numerical
gn(semi.E_cd_denom denominator for
semi.E_cd_deno
)==0,semi.dc_tol,sig m centered Global
m_num
n(semi.E_cd_denom) difference
*semi.dc_tol),semi.E_ scheme
cd_denom)
epsilon0_const*semi.
Normal
epsilonr_down*semi.
component of
epsilonr_up*(down(V
semi.Dcd C/m² the electric Global
)-up(V))/
displacement
semi.E_cd_denom_nu
field
m
Normal
semi.Dcd/ component of
semi.E_down (epsilon0_const*semi V/m the electric field Global
.epsilonr_down) in the down
direction
Normal
semi.Dcd/ component of
semi.E_up (epsilon0_const*semi V/m the electric field Global
.epsilonr_up) in the up
direction
Normal
epsilon0_const*semi. component of
semi.D_bnd_dow epsilonr_down*(dow the electric Boundaries
C/m²
n n(V)-semi.nV)/ displacement 1–4
semi.dc_down_bnd field in the down
direction
13
Normal
epsilon0_const*semi. component of
epsilonr_up*(up(V)- the electric Boundaries
semi.D_bnd_up C/m²
semi.nV)/ displacement 1–4
semi.dc_up_bnd field in the up
direction
semi.DX/
Electric field, X-
semi.EX (semi.epsilonrs*epsil V/m Domain 1
component
on0_const)
semi.DY/
Electric field, Y-
semi.EY (semi.epsilonrs*epsil V/m Domain 1
component
on0_const)
Electric field, Z-
semi.EZ 0 V/m Domain 1
component
Reference
semi.T0 293.15[K] K temperature for Domain 1
energy levels
Out-of-plane
semi.d 1.0E-6[m] m Domain 1
thickness
Electron
semi.gamma_n 1 1 degeneracy Domain 1
factor
Hole degeneracy
semi.gamma_p 1 1 Domain 1
factor
Electron
semi.Gn 1 1 degeneracy Domain 1
function
Hole degeneracy
semi.Gp 1 1 Domain 1
function
Electron
nonequilibrium
2*semi.Vth*semi.mu contribution to
semi.Qthn m²/s Domain 1
n the thermal
diffusion
coefficient
Hole
nonequilibrium
2*semi.Vth*semi.mu contribution to
semi.Qthp m²/s Domain 1
p the thermal
diffusion
coefficient
semi.cp 1 1 Interface Domain 1
continuation
14
parameter
Doping and trap
density
semi.cp_dtd 1 1 Domain 1
continuation
parameter
Normal vector, Boundaries
semi.nX dnX
X-component 1–4
semi.nY dnY
Y-component 1–4
semi.nZ 0
Z-component 1–4
Mesh normal
Boundaries
semi.nmeshX dnXmesh vector, X-
1–4
component
Mesh normal
Boundaries
semi.nmeshY dnYmesh vector, Y-
1–4
component
Mesh normal
Boundaries
semi.nmeshZ 0 vector, Z-
1–4
component
Mesh normal
Boundaries
semi.unmeshX unXmesh vector, upside,
1–4
X-component
Mesh normal
Boundaries
semi.unmeshY unYmesh vector, upside,
1–4
Y-component
Mesh normal
Boundaries
semi.unmeshZ 0 vector, upside,
1–4
Z-component
Mesh normal
vector, Boundaries
semi.dnmeshX dnXmesh
downside, X- 1–4
component
Mesh normal
vector, Boundaries
semi.dnmeshY dnYmesh
downside, Y- 1–4
component
Mesh normal
vector, Boundaries
semi.dnmeshZ 0
downside, Z- 1–4
component
Reference
semi.Vref semi.Vref_local V Point 1
potential
15
semi.intsemi(semi.Vr Reference
semi.Vref_global V Global
ef) potential, global
2.4.3 Weak Expressions

Weak expression Integration order Integration frame Selection
-
test(V)*circumcenter(semi.rho)*semi. 0 Material Domain 1
d
Mesh
semi.Dcd*test(down(V)-
0 Material boundaries
up(V))*semi.d
on domain
2.4.4 Semiconductor Material Model 1
Semiconductor Material Model 1
SELECTION
EQUATIONS
16
Material Properties
SETTINGS
Description Value
Relative permittivity From material
Band gap From material
Electron affinity From material
Effective density of states, valence band From material
Effective density of states, conduction band From material
Mobility Model
SETTINGS
Description Value
Electron mobility From material
Hole mobility From material
Band Gap Narrowing
SETTINGS
Description Value
Band gap
None
narrowing
Dopant Ionization
SETTINGS
Description Value
Dopant Complete
ionization ionization
Model Input
SETTINGS
Descriptio
Value Unit
n
Temperatu
User defined
re
17
Descriptio
Value Unit
n
Temperatu
293.15 K
re
PROPERTIES FROM MATERIAL

Property Material Property group
Electron mobility Si - Silicon Semiconductor material
Hole mobility Si - Silicon Semiconductor material
Relative permittivity Si - Silicon Basic
Band gap Si - Silicon Semiconductor material
Electron affinity Si - Silicon Semiconductor material
Effective density of states, conduction band Si - Silicon Semiconductor material
Effective density of states, valence band Si - Silicon Semiconductor material
Variables

Electron
semi.N Ne 1/m³ Domain 1
concentration
Hole
semi.P Ph 1/m³ Domain 1
concentration
e_const*(semi.P-
Space charge
semi.rho semi.N+semi.Ndo C/m³ Domain 1 + operation
density
ping)
semi.Vth_init*(-
log(semi.p_init/
semi.ni_init)*(semi
.Ndoping_init<0)
+log(semi.n_init/
semi.ni_init)*(semi Initial electric
semi.V_init V Domain 1
.Ndoping_init>=0 potential
))-semi.chi_init-
0.5*semi.Eg_init+
0.5*semi.Vth_init*l
og(semi.Nv_init/
semi.Nc_init)
subst(semi.chi_se
Electron affinity
semi.chi_init mi,semi.Tl,semi.T0 V Domain 1
for initialization
)
Donor
semi.Nd 4*eps 1/m³ Domain 1 + operation
concentration
semi.Na 3*eps 1/m³ Acceptor Domain 1 + operation
18
concentration
Recombination
semi.Un 0 1/(m³·s) rate for Domain 1 + operation
electrons
Recombination
semi.Up 0 1/(m³·s) Domain 1 + operation
rate for holes
log10(semi.N/ Log of electron
semi.log10N 1 Domain 1
1[1/cm^3]) concentration
log10(semi.P/ Log of hole
semi.log10P 1 Domain 1
semi.smm1.minp Lattice
semi.Tl K Domain 1
ut_temperature temperature
Thermal
semi.Vth_init semi.Vth_T0 V potential for Domain 1
initialization
k_B_const*semi.Tl Thermal
semi.Vth V Domain 1
/e_const potential
Thermal
potential at
k_B_const*semi.T
semi.Vth_T0 V equilibrium Domain 1
0/e_const
reference
temperature
-0.5*semi.Eg-
semi.V_eq_adj-
semi.chi_semi+se
mi.Vth*(0.5*log(se
mi.Nv/semi.Nc)-
if(semi.Ndoping<
0,log(semi.p_eq/
(semi.gamma_p*s
Equilibrium
qrt(semi.Nc*semi.
semi.V_eq V electric Domain 1
Nv)))
potential
+0.5*semi.Eg/
semi.Vth,-
log(semi.n_eq/
(semi.gamma_n*s
qrt(semi.Nc*semi.
Nv)))-
0.5*semi.Eg/
semi.Vth))
semi.V_eq_adj 0.5*(semi.Eg0_T0- V Equilibrium Domain 1
semi.Eg0)+semi.c electric
hi0_T0- potential
semi.chi0+0.5*(se temperature
19
mi.Vth*log(semi.
Nv/semi.Nc)-
semi.Vth_T0*log(s adjustment
emi.Nv_T0/
semi.Nc_T0))
if(semi.Ndoping_i
nit>0,0.5*semi.Nd
oping_init+sqrt((0
.5*semi.Ndoping_
init)^2+semi.ni_in
it^2),semi.ni_init^ Initial electron
semi.n_init 1/m³ Domain 1
2/(- concentration
0.5*semi.Ndoping
_init+sqrt((0.5*se
mi.Ndoping_init)
^2+semi.ni_init^
2)))
if(semi.Ndoping>
0,0.5*semi.Ndopi
ng+sqrt((0.5*semi
.Ndoping)^2+se
Equilibrium
mi.ni_mod^2),se
semi.n_eq 1/m³ electron Domain 1
mi.ni_mod^2/(-
concentration
0.5*semi.Ndoping
+sqrt((0.5*semi.N
doping)^2+semi.
ni_mod^2)))
if(semi.Ndoping_i
nit<0,-
0.5*semi.Ndoping
_init+sqrt((0.5*se
mi.Ndoping_init)
^2+semi.ni_init^ Initial hole
semi.p_init 1/m³ Domain 1
2),semi.ni_init^2/ concentration
(0.5*semi.Ndopin
g_init+sqrt((0.5*s
emi.Ndoping_init)
^2+semi.ni_init^
2)))
semi.p_eq if(semi.Ndoping< 1/m³ Equilibrium Domain 1
0,- hole
0.5*semi.Ndoping concentration
+sqrt((0.5*semi.N
doping)^2+semi.
ni_mod^2),semi.n
i_mod^2/
20
(0.5*semi.Ndopin
g+sqrt((0.5*semi.
Ndoping)^2+sem
i.ni_mod^2)))
subst(semi.Eg,se Band gap for
semi.Eg_init V Domain 1
mi.Tl,semi.T0) initialization
Intrinsic band
subst(semi.Eg0,se
gap voltage at
mi.smm1.minput_
semi.Eg0_T0 V equilibrium Domain 1
temperature,semi.
reference
T0)
temperature
semi.Eg0- Band gap
semi.Eg V Domain 1
semi.deltaEg voltage
Conduction
semi.alpha 1 1 Domain 1
band fraction
Band gap
semi.deltaEg 0 V narrowing Domain 1
voltage
Band gap
semi.deltaEg*e_co
semi.deltaEg_e J narrowing Domain 1
nst
voltage
Intrinsic
subst(semi.chi0,se
electron affinity
mi.smm1.minput_
semi.chi0_T0 V at equilibrium Domain 1
temperature,semi.
reference
T0)
temperature
semi.chi0+semi.al
semi.chi_semi V Electron affinity Domain 1
pha*semi.deltaEg
Effective
subst(semi.Nv,se density of
semi.Nv_init mi.Tl,semi.T0)+ep 1/m³ states, valence Domain 1
s band for
initialization
Effective
density of
subst(semi.Nc,se
states,
semi.Nc_init mi.Tl,semi.T0)+ep 1/m³ Domain 1
conduction
s
band for
initialization
semi.Nv_T0 subst(semi.Nv,se 1/m³ Effective Domain 1
mi.smm1.minput_ density of
temperature,semi. states, valence
T0) band at
equilibrium
21
reference
temperature
Effective
density of
subst(semi.Nc,se states,
mi.smm1.minput_ conduction
semi.Nc_T0 1/m³ Domain 1
temperature,semi. band at
T0) equilibrium
reference
temperature
sqrt(semi.Nc_init*
semi.Nv_init)*exp( Intrinsic carrier
semi.ni_init - 1/m³ concentration Domain 1
0.5*semi.Eg_init/ for initialization
semi.Vth_init)
sqrt(semi.Nc*semi
.Nv)*exp(- Intrinsic carrier
semi.ni 1/m³ Domain 1
0.5*semi.Eg0/ concentration
semi.Vth)
semi.ni*exp(0.5*s Effective
semi.ni_eff emi.deltaEg/ 1/m³ intrinsic carrier Domain 1
semi.Vth) concentration
Modified
semi.ni_eff*sqrt(s intrinsic carrier
semi.ni_mod emi.gamma_n*se 1/m³ concentration Domain 1
mi.gamma_p) for mass action
law
subst(- Signed dopant
semi.Ndoping_i
semi.Na+semi.Nd 1/m³ concentration Domain 1
nit
,semi.Tl,semi.T0) for initialization
semi.Ndplus- Signed dopant
semi.Ndoping 1/m³ Domain 1
semi.Naminus concentration
Ionized donor
semi.Ndplus semi.Nd 1/m³ Domain 1
concentration
Ionized
semi.Naminus semi.Na 1/m³ acceptor Domain 1
concentration
Log of ionized
semi.log10Ndpl log10(semi.Ndplu
1 donor Domain 1
us s/1[1/cm^3])
concentration
Log of ionized
semi.log10Nami log10(semi.Nami
1 acceptor Domain 1
nus nus/1[1/cm^3])
concentration
22
log10(semi.Nd/ Log of donor
semi.log10Nd 1 Domain 1
log10(semi.Na/ Log of acceptor
semi.log10Na 1 Domain 1
Electron
semi.mun material.mun m²/(V·s) Domain 1 Meta
mobility
semi.mup material.mup m²/(V·s) Hole mobility Domain 1 Meta
Electron
semi.mun*semi.Vt
semi.Dn m²/s diffusion Domain 1
h*semi.Gn
coefficient
semi.mup*semi.Vt Hole diffusion
semi.Dp m²/s Domain 1
h*semi.Gp coefficient
Electron
semi.Qthn- thermal
semi.Dn_th m²/s Domain 1
1.5*semi.Dn diffusion
coefficient
Hole thermal
semi.Qthp-
semi.Dp_th m²/s diffusion Domain 1
1.5*semi.Dp
coefficient
Vacuum energy
semi.E0 -V V Domain 1
level
Conduction
semi.Ec -V-semi.chi_semi V band energy Domain 1
level
Conduction
semi.Ec_e e_const*semi.Ec J band energy Domain 1
level
Conduction
band energy
semi.Ec0 -V-semi.chi0 V level without Domain 1
band-gap
narrowing
Conduction
band energy
semi.Ec0_e e_const*semi.Ec0 J level without Domain 1
band-gap
narrowing
semi.Ec+semi.Vth
Electron quasi-
*log(semi.N_num/
semi.Efn V Fermi energy Domain 1
(semi.gamma_n*s
level
emi.Nc))
semi.Efp semi.Ev- V Hole quasi- Domain 1
semi.Vth*log(sem Fermi energy
23
i.P_num/
(semi.gamma_p*s level
emi.Nv))
0.5*(semi.Ec+sem
i.Ev+semi.Vth*log Intrinsic energy
semi.Ei V Domain 1
(semi.Nv/ level
semi.Nc))
0.5*(semi.Ec0+se
Intrinsic energy
mi.Ev0+semi.Vth_
semi.Ei_init V level initial Domain 1
init*log(semi.Nv_i
value
nit/semi.Nc_init))
Valence band
semi.Ev semi.Ec-semi.Eg V Domain 1
energy level
Valence band
semi.Ec0- energy level
semi.Ev0 V Domain 1
semi.Eg0 without band-
gap narrowing
Valence band
energy level
semi.Ev0_e semi.Ev0*e_const J Domain 1
without band-
gap narrowing
Vacuum energy
semi.E0_e e_const*semi.E0 J Domain 1
level
Electron quasi-
semi.Efn_e e_const*semi.Efn J Fermi energy Domain 1
level
Intrinsic energy
semi.Ei_e e_const*semi.Ei J Domain 1
level
Hole quasi-
semi.Efp_e e_const*semi.Efp J Fermi energy Domain 1
level
Valence band
semi.Ev_e e_const*semi.Ev J Domain 1
energy level
semi.Eg0_e semi.Eg0*e_const J Band gap Domain 1
Band gap
semi.Eg_e semi.Eg*e_const J Domain 1
energy
semi.chi0_e semi.chi0*e_const J Electron affinity Domain 1
semi.chi_semi*e_c
semi.chi_e J Electron affinity Domain 1
onst
semi.L_D sqrt(epsilon0_con m Debye length Domain 1
st*semi.epsilonrs*
k_B_const*semi.Tl
24
/
(e_const^2*(semi.
N+semi.P)))
log10(abs(semi.L_ Log of the
semi.log_L_D 1 Domain 1
D[1/m])) Debye length
h*sqrt(semi.VnX^
2+semi.VnY^2+s
Electron cell
semi.Pec_n emi.VnZ^2)/ 1 Domain 1
peclet number
sqrt(semi.Dn^2+e
ps)
h*sqrt(semi.VpX^
2+semi.VpY^2+s
Hole cell peclet
semi.Pec_p emi.VpZ^2)/ 1 Domain 1
number
sqrt(semi.Dp^2+
eps)
sqrt(1.0E-
200+realdot(semi
.EX,semi.EX)
Electric field
semi.normE +realdot(semi.EY, V/m Domain 1
norm
semi.EY)
+realdot(semi.EZ,
semi.EZ))
sqrt(1.0E-
200+realdot(semi
.DX,semi.DX) Electric
semi.normD +realdot(semi.DY, C/m² displacement Domain 1
semi.DY) field norm
+realdot(semi.DZ,
semi.DZ))
Electron current
semi.JnX semi.Jn_postX A/m² density, X- Domain 1
component
Electron current
semi.JnY semi.Jn_postY A/m² density, Y- Domain 1
component
Electron current
semi.JnZ 0 A/m² density, Z- Domain 1
component
semi.normJn sqrt(1.0E- A/m² Electron current Domain 1
200+realdot(semi density norm
.JnX,semi.JnX)
+realdot(semi.JnY
,semi.JnY)
+realdot(semi.JnZ
25
,semi.JnZ))
Log of electron
semi.log10norm log10(semi.normJ
1 current density Domain 1
Jn n/1[A/cm^2])
norm
Hole current
semi.JpX semi.Jp_postX A/m² density, X- Domain 1
component
Hole current
semi.JpY semi.Jp_postY A/m² density, Y- Domain 1
component
Hole current
semi.JpZ 0 A/m² density, Z- Domain 1
component
sqrt(1.0E-
200+realdot(semi
.JpX,semi.JpX)
Hole current
semi.normJp +realdot(semi.JpY A/m² Domain 1
density norm
,semi.JpY)
+realdot(semi.JpZ
,semi.JpZ))
Log of hole
Jp p/1[A/cm^2])
norm
Total current
semi.JnX+semi.Jp density, nodal
semi.JX A/m² Domain 1
X value, X-
component
Total current
semi.JnY+semi.Jp density, nodal
semi.JY A/m² Domain 1
Y value, Y-
component
Total current
semi.JnZ+semi.Jp density, nodal
semi.JZ A/m² Domain 1
Z value, Z-
component
sqrt(1.0E-
200+realdot(semi
.JX,semi.JX) Total current
semi.normJ +realdot(semi.JY,s A/m² density norm, Domain 1
emi.JY) nodal value
+realdot(semi.JZ,s
emi.JZ))
semi.log10norm log10(semi.normJ Log of current
1 Domain 1
J /1[A/cm^2]) density norm
26
semi.normGrad sqrt(d(semi.Tl,X)^ Temperature
K/m Domain 1
T 2+d(semi.Tl,Y)^2) gradient norm
Thermal
semi.Jn_thX+semi diffusion
semi.J_thX A/m² Domain 1
.Jp_thX current density,
X-component
Thermal
semi.Jn_thY+semi diffusion
semi.J_thY A/m² Domain 1
.Jp_thY current density,
Y-component
Thermal
semi.Jn_thZ+semi diffusion
semi.J_thZ A/m² Domain 1
.Jp_thZ current density,
Z-component
sqrt(1.0E- Thermal
200+semi.J_thX^ diffusion
semi.normJ_th A/m² Domain 1
2+semi.J_thY^2+ current density
semi.J_thZ^2) norm
Log of thermal
semi.log10norm log10(semi.normJ diffusion
1 Domain 1
J_th _th/1[A/cm^2]) current density
norm
Electron
thermal
semi.Jn_thX semi.Jn_th_postX A/m² diffusion Domain 1
current density,
X-component
Electron
thermal
semi.Jn_thY semi.Jn_th_postY A/m² diffusion Domain 1
current density,
Y-component
Electron
thermal
semi.Jn_thZ 0 A/m² diffusion Domain 1
current density,
Z-component
Electron
sqrt(1.0E-
thermal
200+semi.Jn_thX
semi.normJn_th A/m² diffusion Domain 1
^2+semi.Jn_thY^
current density
2+semi.Jn_thZ^2)
norm
semi.log10norm log10(semi.normJ 1 Log of Electron Domain 1
Jn_th n_th/1[A/cm^2]) thermal
27
diffusion
current density
norm
Hole thermal
diffusion
semi.Jp_thX semi.Jp_th_postX A/m² Domain 1
current density,
X-component
Hole thermal
diffusion
semi.Jp_thY semi.Jp_th_postY A/m² Domain 1
current density,
Y-component
Hole thermal
diffusion
semi.Jp_thZ 0 A/m² Domain 1
current density,
Z-component
sqrt(1.0E- Hole thermal
200+semi.Jp_thX diffusion
semi.normJp_th A/m² Domain 1
^2+semi.Jp_thY^ current density
2+semi.Jp_thZ^2) norm
Log of hole
thermal
1 diffusion Domain 1
Jp_th p_th/1[A/cm^2])
current density
norm
Drift current
semi.Jn_driftX+se
semi.J_driftX A/m² density, X- Domain 1
mi.Jp_driftX
component
Drift current
semi.Jn_driftY+se
semi.J_driftY A/m² density, Y- Domain 1
mi.Jp_driftY
component
Drift current
semi.Jn_driftZ+se
semi.J_driftZ A/m² density, Z- Domain 1
mi.Jp_driftZ
component
sqrt(1.0E-
200+semi.J_driftX
semi.normJ_drif Drift current
^2+semi.J_driftY A/m² Domain 1
t density norm
^2+semi.J_driftZ
^2)
Log of drift
J_drift _drift/1[A/cm^2])
norm
Electron drift
semi.Jn_drift_post
semi.Jn_driftX A/m² current density, Domain 1
X
X-component
28
Electron drift
semi.Jn_drift_post
semi.Jn_driftY A/m² current density, Domain 1
Y
Y-component
Electron drift
semi.Jn_driftZ 0 A/m² current density, Domain 1
Z-component
sqrt(1.0E-
200+semi.Jn_drift Electron drift
semi.normJn_dri
X^2+semi.Jn_drift A/m² current density Domain 1
ft
Y^2+semi.Jn_drift norm
Z^2)
log10(semi.normJ Log of electron
semi.log10norm
n_drift/1[A/ 1 drift current Domain 1
Jn_drift
cm^2]) density norm
Hole drift
semi.Jp_drift_post
semi.Jp_driftX A/m² current density, Domain 1
X
X-component
Hole drift
semi.Jp_drift_post
semi.Jp_driftY A/m² current density, Domain 1
Y
Y-component
Hole drift
semi.Jp_driftZ 0 A/m² current density, Domain 1
Z-component
sqrt(1.0E-
200+semi.Jp_drift Hole drift
semi.normJp_dri
X^2+semi.Jp_drift A/m² current density Domain 1
ft
Y^2+semi.Jp_drift norm
Z^2)
log10(semi.normJ Log of hole
semi.log10norm
p_drift/1[A/ 1 drift current Domain 1
Jp_drift
cm^2]) density norm
Diffusion
semi.Jn_diffX+se
semi.J_diffX A/m² current density, Domain 1
mi.Jp_diffX
X-component
Diffusion
semi.Jn_diffY+se
semi.J_diffY A/m² current density, Domain 1
mi.Jp_diffY
Y-component
Diffusion
semi.Jn_diffZ+se
semi.J_diffZ A/m² current density, Domain 1
mi.Jp_diffZ
Z-component
semi.normJ_diff sqrt(1.0E- A/m² Diffusion Domain 1
200+semi.J_diffX current density
^2+semi.J_diffY^ norm
29
2+semi.J_diffZ^2)
sqrt(1.0E-
Electron
200+semi.Jn_diffX
semi.normJn_dif diffusion
^2+semi.Jn_diffY A/m² Domain 1
f current density
^2+semi.Jn_diffZ
norm
^2)
Log of diffusion
J_diff _diff/1[A/cm^2])
norm
Electron
semi.Jn_diff_post diffusion
semi.Jn_diffX A/m² Domain 1
X current density,
X-component
Electron
diffusion
semi.Jn_diffY semi.Jn_diff_postY A/m² Domain 1
current density,
Y-component
Electron
diffusion
semi.Jn_diffZ 0 A/m² Domain 1
current density,
Z-component
Log of electron
1 Domain 1
Jn_diff n_diff/1[A/cm^2]) current density
norm
Hole diffusion
semi.Jp_diff_post
semi.Jp_diffX A/m² current density, Domain 1
X
X-component
Hole diffusion
semi.Jp_diff_post
semi.Jp_diffY A/m² current density, Domain 1
Y
Y-component
Hole diffusion
semi.Jp_diffZ 0 A/m² current density, Domain 1
Z-component
sqrt(1.0E-
200+semi.Jp_diffX Hole diffusion
semi.normJp_dif
^2+semi.Jp_diffY A/m² current density Domain 1
f
^2+semi.Jp_diffZ norm
^2)
Log of hole
1 Domain 1
Jp_diff p_diff/1[A/cm^2]) current density
norm
30
Trap number
semi.Nt 0 1/m³ Domain 1 + operation
density
Local reference
semi.Vref_local semi.chi0 V Domain 1
potential
semi.Enorm0_w Electric field
0 V/m Domain 1
o norm
semi.freq_wo 0 Hz Frequency Domain 1
semi.epsilonr0_ Permittivity, XX-
0 1 Domain 1
woXX component
semi.epsilonr0_ Permittivity, YX-
0 1 Domain 1
woYX component
semi.epsilonr0_ Permittivity, ZX-
0 1 Domain 1
woZX component
semi.epsilonr0_ Permittivity, XY-
0 1 Domain 1
woXY component
semi.epsilonr0_ Permittivity, YY-
0 1 Domain 1
woYY component
semi.epsilonr0_ Permittivity, ZY-
0 1 Domain 1
woZY component
semi.epsilonr0_ Permittivity, XZ-
0 1 Domain 1
woXZ component
semi.epsilonr0_ Permittivity, YZ-
0 1 Domain 1
woYZ component
semi.epsilonr0_ Permittivity, ZZ-
0 1 Domain 1
woZZ component
Change in real
semi.chi_re_woX part of
0 1 Domain 1 + operation
X susceptibility,
XX-component
Change in real
semi.chi_re_woY part of
X susceptibility,
YX-component
Change in real
semi.chi_re_woZ part of
X susceptibility,
ZX-component
Change in real
Y susceptibility,
XY-component
semi.chi_re_woY 0 1 Change in real Domain 1 + operation
31
part of
Y susceptibility,
YY-component
Change in real
Y susceptibility,
ZY-component
Change in real
Z susceptibility,
XZ-component
Change in real
semi.chi_re_woY part of
Z susceptibility,
YZ-component
Change in real
Z susceptibility,
ZZ-component
Change in
imaginary part
semi.chi_im_wo
0 1 of Domain 1 + operation
XX
susceptibility,
XX-component
Change in
imaginary part
semi.chi_im_wo
YX
susceptibility,
YX-component
Change in
imaginary part
semi.chi_im_wo
ZX
susceptibility,
ZX-component
Change in
imaginary part
semi.chi_im_wo
XY
susceptibility,
XY-component
Change in
imaginary part
semi.chi_im_wo
YY
susceptibility,
YY-component
32
Change in
imaginary part
semi.chi_im_wo
ZY
susceptibility,
ZY-component
Change in
imaginary part
semi.chi_im_wo
XZ
susceptibility,
XZ-component
Change in
imaginary part
semi.chi_im_wo
YZ
susceptibility,
YZ-component
Change in
imaginary part
semi.chi_im_wo
ZZ
susceptibility,
ZZ-component
if(semi.N>1.0E-
100[m^(- Electron
semi.N_num 1/m³ Domain 1
3)],semi.N,1.0E- concentration
100[m^(-3)])
if(semi.P>1.0E-
100[m^(- Hole
semi.P_num 1/m³ Domain 1
3)],semi.P,1.0E- concentration
100[m^(-3)])
Relative
material.epsilonr1
semi.epsilonrXX 1 permittivity, Domain 1 Meta
1
XX-component
Relative
material.epsilonr2
semi.epsilonrYX 1 permittivity, YX- Domain 1 Meta
1
component
Relative
material.epsilonr3
semi.epsilonrZX 1 permittivity, ZX- Domain 1 Meta
1
component
Relative
material.epsilonr1
semi.epsilonrXY 1 permittivity, XY- Domain 1 Meta
2
component
Relative
material.epsilonr2
semi.epsilonrYY 1 permittivity, YY- Domain 1 Meta
2
component
semi.epsilonrZY material.epsilonr3 1 Relative Domain 1 Meta
33
permittivity, ZY-
2
component
Relative
material.epsilonr1
semi.epsilonrXZ 1 permittivity, XZ- Domain 1 Meta
3
component
Relative
material.epsilonr2
semi.epsilonrYZ 1 permittivity, YZ- Domain 1 Meta
3
component
Relative
material.epsilonr3
semi.epsilonrZZ 1 permittivity, ZZ- Domain 1 Meta
3
component
Relative
semi.epsilonr_is material.epsilonr_i
1 permittivity, Domain 1 Meta
o so
isotropic value
semi.Eg0 material.Eg0 V Band gap Domain 1 Meta
semi.chi0 material.chi0 V Electron affinity Domain 1 Meta
Effective
density of
semi.Nc material.Nc 1/m³ states, Domain 1 Meta
conduction
band
Effective
density of
semi.Nv material.Nv 1/m³ Domain 1 Meta
states, valence
band
SG down
down(semi.mun)*
electron
semi.Dn_down semi.Vth*down(se m²/s Global
diffusion
mi.Gn)
coefficient
up(semi.mun)*se SG up electron
semi.Dn_up mi.Vth*up(semi.G m²/s diffusion Global
n) coefficient
down(semi.mup)* SG down hole
semi.Dp_down semi.Vth*down(se m²/s diffusion Global
mi.Gp) coefficient
up(semi.mup)*se SG up hole
semi.Dp_up mi.Vth*up(semi.G m²/s diffusion Global
p) coefficient
semi.Qthn_dow 2*semi.Vth*down( m²/s Electron Global
n semi.mun) nonequilibrium
contribution to
the thermal
diffusion
34
coefficient,
downside
Electron
nonequilibrium
contribution to
2*semi.Vth*up(se
semi.Qthn_up m²/s the thermal Global
mi.mun)
diffusion
coefficient,
upside
Hole
nonequilibrium
contribution to
semi.Qthp_dow 2*semi.Vth*down(
m²/s the thermal Global
n semi.mup)
diffusion
coefficient,
downside
Hole
nonequilibrium
contribution to
2*semi.Vth*up(se
semi.Qthp_up m²/s the thermal Global
mi.mup)
diffusion
coefficient,
upside
Electron
semi.Qthn_down- thermal
semi.Dn_th_dow
1.5*semi.Dn_dow m²/s diffusion Global
n
n coefficient,
downside
Electron
thermal
semi.Qthn_up-
semi.Dn_th_up m²/s diffusion Global
1.5*semi.Dn_up
coefficient,
upside
Hole thermal
semi.Qthp_down-
semi.Dp_th_do diffusion
1.5*semi.Dp_dow m²/s Global
wn coefficient,
n
downside
Hole thermal
semi.Qthp_up- diffusion
semi.Dp_th_up m²/s Global
1.5*semi.Dp_up coefficient,
upside
(up(circumcenter(
semi.grad_chi_u semi.chi_semi))- Electron affinity
V/m Global
p up(semi.chi_semi) gradient
)/semi.dc_up_bnd
35
(down(semi.chi_se
mi)-
down(circumcent
semi.grad_chi_d Electron affinity
er(semi.chi_semi)) V/m Global
own gradient
)/
semi.dc_down_bn
d
(semi.chi_semi-
semi.bc_grad_c down(circumcent Electron affinity Boundaries
V/m
hi er(semi.chi_semi)) gradient 1–4
)/semi.dc_n
(up(circumcenter(
semi.grad_Eg_u semi.Eg))- Band gap
V/m Global
p up(semi.Eg))/ gradient
semi.dc_up_bnd
(down(semi.Eg)-
down(circumcent
semi.grad_Eg_d Band gap
er(semi.Eg)))/ V/m Global
own gradient
semi.dc_down_bn
d
(semi.Eg-
semi.bc_grad_E down(circumcent Band gap Boundaries
V/m
g er(semi.Eg)))/ gradient 1–4
semi.dc_n
(up(circumcenter(
Effective
log(semi.Nc*1[m
density of
semi.grad_logN ^3])))-
1/m states gradient, Global
c_up up(log(semi.Nc*1[
conduction
m^3])))/
band
semi.dc_up_bnd
(down(log(semi.N
c*1[m^3]))- Effective
down(circumcent density of
semi.grad_logN
er(log(semi.Nc*1[ 1/m states gradient, Global
c_down
m^3]))))/ conduction
semi.dc_down_bn band
d
(log(semi.Nc*1[m
Effective
^3])-
density of
semi.bc_grad_lo down(circumcent Boundaries
1/m states gradient,
gNc er(log(semi.Nc*1[ 1–4
conduction
m^3]))))/
band
semi.dc_n
semi.grad_logN (up(circumcenter( 1/m Effective Global
v_up log(semi.Nv*1[m density of
36
^3])))-
up(log(semi.Nv*1[ states gradient,
m^3])))/ valence band
semi.dc_up_bnd
(down(log(semi.N
v*1[m^3]))-
Effective
down(circumcent
semi.grad_logN density of
er(log(semi.Nv*1[ 1/m Global
v_down states gradient,
m^3]))))/
valence band
semi.dc_down_bn
d
(log(semi.Nv*1[m
^3])- Effective
semi.bc_grad_lo down(circumcent density of Boundaries
1/m
gNv er(log(semi.Nv*1[ states gradient, 1–4
m^3]))))/ valence band
semi.dc_n
down(semi.mun)*
semi.E_down-
down(semi.mun)*
semi.grad_chi_do
SG down
wn-
electron
semi.Dn_down*se
semi.Vn_down m/s conservative Global
mi.grad_logNc_d
convective
own+semi.Dn_th_
velocity
down*(d(semi.Tl,X
)*semi.dngX+d(se
mi.Tl,Y)*semi.dng
Y)/semi.Tl
up(semi.mun)*se
mi.E_up-
up(semi.mun)*se
mi.grad_chi_up-
SG up electron
semi.Dn_up*semi.
conservative
semi.Vn_up grad_logNc_up+s m/s Global
convective
emi.Dn_th_up*(d(
velocity
semi.Tl,X)*semi.d
ngX+d(semi.Tl,Y)*
semi.dngY)/
semi.Tl
semi.Vp_down down(semi.mup)* m/s SG down hole Global
semi.E_down- conservative
down(semi.mup)* convective
(semi.grad_chi_do velocity
wn+semi.grad_Eg
_down)
37
+semi.Dp_down*s
emi.grad_logNv_d
own-
semi.Dp_th_down
*(d(semi.Tl,X)*sem
i.dngX+d(semi.Tl,
Y)*semi.dngY)/
semi.Tl
up(semi.mup)*se
mi.E_up-
up(semi.mup)*(se
mi.grad_chi_up+s
emi.grad_Eg_up)
SG up hole
+semi.Dp_up*se
conservative
semi.Vp_up mi.grad_logNv_u m/s Global
convective
p-
velocity
semi.Dp_th_up*(d
(semi.Tl,X)*semi.d
ngX+d(semi.Tl,Y)*
semi.dngY)/
semi.Tl
SG down
exp(semi.An_expo exponential
semi.An 1 Global
) term for
electrons
SG up
exp(semi.Bn_expo exponential
semi.Bn 1 Global
) term for
electrons
SG down
exp(semi.Ap_expo
semi.Ap 1 exponential Global
)
term for holes
SG up
exp(semi.Bp_expo
semi.Bp 1 exponential Global
)
term for holes
-
SG down
semi.Vn_down*se
semi.An_expo 1 exponent for Global
mi.dc_down/
electrons
semi.Dn_down
semi.Vn_up*semi.
SG up exponent
semi.Bn_expo dc_up/ 1 Global
for electrons
semi.Dn_up
semi.Vp_down*se SG down
semi.Ap_expo mi.dc_down/ 1 exponent for Global
semi.Dp_down holes
38
-
semi.Vp_up*semi. SG up exponent
semi.Bp_expo 1 Global
dc_up/ for holes
semi.Dp_up
if(abs(semi.An_ex
po)<semi.global_f
lux_tol_sg||
Normal current
semi.nJn_sg abs(semi.Bn_expo A/m² Global
for electrons
)<semi.global_flu
x_tol_sg,semi.nCn,
semi.nSGn)
if(abs(semi.Ap_ex
po)<semi.global_f
lux_tol_sg||
Normal current
semi.nJp_sg abs(semi.Bp_expo A/m² Global
for holes
)<semi.global_flu
x_tol_sg,semi.nCp,
semi.nSGp)
-
e_const*semi.Vn_
down*(up(semi.N)
SG normal
*semi.Bn-
semi.nSGn A/m² current for Global
down(semi.N)*se
electrons
mi.An)/
semi.nSGn_deno
m_num
-
e_const*semi.Vp_
down*(up(semi.P)
SG normal
*semi.Bp-
semi.nSGp A/m² current for Global
down(semi.P)*se
holes
mi.Ap)/
semi.nSGp_deno
m_num
-
Denominator
1+semi.Vn_down*
semi.nSGn_den for SG normal
(1-semi.Bn)/ 1 Global
om current for
semi.Vn_up+semi.
electrons
An
-
Denominator
1+semi.Vp_down
semi.nSGp_den for SG normal
*(1-semi.Bp)/ 1 Global
om current for
semi.Vp_up+semi
holes
.Ap
semi.nSGn_den if(abs(semi.nSGn_ 1 Numerical Global
39
denom)<semi.glo
bal_flux_tol_sg,if(s
ign(semi.nSGn_de
denominator
nom)==0,semi.gl
for SG normal
om_num obal_flux_tol_sg,si
current for
gn(semi.nSGn_de
electrons
nom)*semi.global
_flux_tol_sg),semi.
nSGn_denom)
if(abs(semi.nSGp_
denom)<semi.glo
bal_flux_tol_sg,if(s
Numerical
ign(semi.nSGp_de
denominator
semi.nSGp_den nom)==0,semi.gl
1 for SG normal Global
om_num obal_flux_tol_sg,si
current for
gn(semi.nSGp_de
holes
nom)*semi.global
_flux_tol_sg),semi.
nSGp_denom)
e_const*(-
semi.Dn_down*(d
own(semi.N)-
up(semi.N))/
semi.nCn_denom_
num+0.5*(down(s
emi.N)*(semi.dc_d
own*(semi.dc_do
wn+2*semi.dc_up
*semi.Dn_down/
semi.Dn_up)*semi
.Vn_down+semi.V
Centered
n_up*(semi.dc_up
difference
semi.nCn *semi.Dn_down/ A/m² Global
normal current
semi.Dn_up)^2)+
for electrons
up(semi.N)*(semi.
dc_down^2*semi.
Vn_down+semi.d
c_up*semi.Dn_do
wn*(2*semi.dc_do
wn+semi.dc_up*s
emi.Dn_down/
semi.Dn_up)*semi
.Vn_up/
semi.Dn_up))/
semi.nCn_denom_
num^2)
40
e_const*(semi.Dp
_down*(down(se
mi.P)-
up(semi.P))/
semi.nCp_denom
_num+0.5*(down(
semi.P)*(semi.dc_
down*(semi.dc_d
own+2*semi.dc_u
p*semi.Dp_down/
semi.Dp_up)*semi
.Vp_down+semi.V
Centered
p_up*(semi.dc_up
difference
semi.nCp *semi.Dp_down/ A/m² Global
normal current
semi.Dp_up)^2)+
for holes
up(semi.P)*(semi.
dc_down^2*semi.
Vp_down+semi.d
c_up*semi.Dp_do
wn*(2*semi.dc_do
wn+semi.dc_up*s
emi.Dp_down/
semi.Dp_up)*semi
.Vp_up/
semi.Dp_up))/
semi.nCp_denom
_num^2)
Denominator
semi.dc_down+se
for centered
semi.nCn_deno mi.dc_up*semi.Dn
m difference Global
m _down/
normal current
semi.Dn_up
for electrons
Denominator
semi.dc_down+se
for centered
semi.nCp_deno mi.dc_up*semi.Dp
m difference Global
m _down/
normal current
semi.Dp_up
for holes
if(abs(semi.nCn_d
enom)<semi.nC_d
Numerical
enom_tol,if(sign(s
denominator
emi.nCn_denom)
semi.nCn_deno for centered
==0,semi.nC_den m Global
m_num difference
om_tol,sign(semi.
normal current
nCn_denom)*sem
for electrons
i.nC_denom_tol),s
emi.nCn_denom)
41
if(abs(semi.nCp_d
enom)<semi.nC_d
Numerical
enom_tol,if(sign(s
denominator
emi.nCp_denom)
semi.nCp_deno for centered
==0,semi.nC_den m Global
m_num difference
om_tol,sign(semi.
normal current
nCp_denom)*sem
for holes
i.nC_denom_tol),s
emi.nCp_denom)
Tolerance for
centered
semi.nC_denom semi.min_h*semi.
m difference Global
_tol global_flux_tol_cd
normal current
denominator
Global
tolerance for
finite volume
fluxes (variable
is replaced in
semi.global_flux
eps 1 subsequent Global
_tol_sg
semiconductor
material model
or charge
conservation
features)
e_const*semi.Dn_
th_down*(d(semi. Mesh boundary
semi.Jn_th_post Tl,X)*semi.dngX+ flux for
A/m² Global
_mesh d(semi.Tl,Y)*semi. elshdivvar
dngY)*down(semi element
.N)/semi.Tl
e_const*semi.bc_
Exterior
Dn_th*(d(semi.Tl,
semi.Jn_th_post downside flux Boundaries
X)*semi.ngX+d(se A/m²
_ext_down for elshdivvar 1–4
mi.Tl,Y)*semi.ngY)
element
*semi.N/semi.Tl
e_const*semi.Dn_
th_up*(d(semi.Tl,X Exterior upside
semi.Jn_th_post )*semi.ungX+d(se flux for Boundaries
A/m²
_ext_up mi.Tl,Y)*semi.ung elshdivvar 1–4
Y)*up(semi.N)/ element
semi.Tl
semi.Jp_th_post - A/m² Mesh boundary Global
_mesh e_const*semi.Dp_ flux for
th_down*(d(semi. elshdivvar
42
Tl,X)*semi.dngX+
d(semi.Tl,Y)*semi.
element
dngY)*down(semi
.P)/semi.Tl
-
e_const*semi.bc_ Exterior
semi.Jp_th_post Dp_th*(d(semi.Tl, downside flux Boundaries
A/m²
_ext_down X)*semi.ngX+d(se for elshdivvar 1–4
mi.Tl,Y)*semi.ngY) element
*semi.P/semi.Tl
-
e_const*semi.bc_ Exterior upside
semi.Jp_th_post Dp_th*(d(semi.Tl, flux for Boundaries
A/m²
_ext_up X)*semi.ngX+d(se elshdivvar 1–4
mi.Tl,Y)*semi.ngY) element
*semi.P/semi.Tl
e_const*down(se
mi.mun)*(semi.E_
down- Mesh boundary
semi.Jn_drift_po d(semi.chi_semi,X flux for
A/m² Global
st_mesh )*semi.dngX- elshdivvar
d(semi.chi_semi,Y) element
*semi.dngY)*dow
n(semi.N)
e_const*down(se
mi.mun)*(semi.nE
- Exterior
semi.Jn_drift_po d(semi.chi_semi,X downside flux Boundaries
A/m²
st_ext_down )*semi.dngX- for elshdivvar 1–4
d(semi.chi_semi,Y) element
*semi.dngY)*dow
n(semi.N)
e_const*up(semi.
mun)*(semi.nE-
Exterior upside
d(semi.chi_semi,X
semi.Jn_drift_po flux for Boundaries
)*semi.ungX- A/m²
st_ext_up elshdivvar 1–4
d(semi.chi_semi,Y)
element
*semi.ungY)*up(s
emi.N)
semi.Jp_drift_po e_const*down(se A/m² Mesh boundary Global
st_mesh mi.mup)*(semi.E_ flux for
down- elshdivvar
d(semi.chi_semi,X element
)*semi.dngX-
d(semi.chi_semi,Y)
43
*semi.dngY-
d(semi.Eg,X)*semi
.dngX-
d(semi.Eg,Y)*semi
.dngY)*down(sem
i.P)
e_const*down(se
mi.mup)*(semi.nE
-
d(semi.chi_semi,X
)*semi.dngX- Exterior
semi.Jp_drift_po d(semi.chi_semi,Y) downside flux Boundaries
A/m²
st_ext_down *semi.dngY- for elshdivvar 1–4
d(semi.Eg,X)*semi element
.dngX-
d(semi.Eg,Y)*semi
.dngY)*down(sem
i.P)
e_const*up(semi.
mup)*(semi.nE-
d(semi.chi_semi,X
)*semi.ungX- Exterior upside
semi.Jp_drift_po d(semi.chi_semi,Y) flux for Boundaries
A/m²
st_ext_up *semi.ungY- elshdivvar 1–4
d(semi.Eg,X)*semi element
.ungX-
d(semi.Eg,Y)*semi
.ungY)*up(semi.P)
semi.nJn_sg- Mesh boundary
semi.Jn_diff_pos e_const*semi.Vn_ flux for
A/m² Global
t_mesh down*down(semi. elshdivvar
N) element
Exterior
semi.nJn-
semi.Jn_diff_pos downside flux Boundaries
e_const*semi.bc_ A/m²
t_ext_down for elshdivvar 1–4
Vn*semi.N
element
Exterior upside
semi.nJn-
semi.Jn_diff_pos flux for Boundaries
t_ext_up elshdivvar 1–4
Vn*semi.N
element
semi.nJp_sg- Mesh boundary
semi.Jp_diff_pos e_const*semi.Vp_ flux for
A/m² Global
t_mesh down*down(semi. elshdivvar
P) element
semi.Jp_diff_pos semi.nJp- A/m² Exterior Boundaries
44
downside flux
e_const*semi.bc_
t_ext_down for elshdivvar 1–4
Vp*semi.P
element
Exterior upside
semi.nJp-
semi.Jp_diff_pos flux for Boundaries
t_ext_up elshdivvar 1–4
Vp*semi.P
element
Mesh boundary
semi.Jn_post_m flux for
semi.nJn_sg A/m² Global
esh elshdivvar
element
Exterior
semi.Jn_post_ex downside flux Boundaries
semi.nJn A/m²
t_down for elshdivvar 1–4
element
Mesh boundary
semi.Jp_post_m flux for
semi.nJp_sg A/m² Global
esh elshdivvar
element
Exterior
semi.Jp_post_ex downside flux Boundaries
semi.nJp A/m²
t_down for elshdivvar 1–4
element
semi.V0_bias 0[V] V Bias voltage Domain 1
semi.Q_J+semi.Q_ Total heat
semi.Q_tot W/m³ Domain 1 + operation
R source
semi.EX*semi.JX+
semi.Q_J W/m³ Joule heating Domain 1
semi.EY*semi.JY
0.5*(e_const*semi
Nonradiative
.Eg0+3*k_B_const
semi.Q_R W/m³ recombination Domain 1
*semi.Tl)*(semi.U
heating
n+semi.Up)
Continuation
semi.smm1.cp 1 1 Domain 1
parameter
Shape functions
Shape
Name Shape function Unit Description Selection
frame
Discontinuous Lagrange Electric
V V Material Domain 1
(Constant) potential
Ne Discontinuous Lagrange 1/m³ Electron Material Domain 1
(Constant) solution
45
Shape
frame
variable
Discontinuous Lagrange Hole solution
Ph 1/m³ Material Domain 1
(Constant) variable
Weak Expressions

e_const*d(semi.N,t)*test(Ne)*s
0 Material Domain 1
emi.d
-
e_const*d(semi.P,t)*test(Ph)*s 0 Material Domain 1
emi.d
semi.nJn_sg*test(up(Ne)- Mesh boundaries on
0 Material
down(Ne))*semi.d domain
semi.nJp_sg*test(up(Ph)- Mesh boundaries on
0 Material
down(Ph))*semi.d domain
2.4.5 Insulation 1
Insulation 1
SELECTION
Geometric entity level Boundary
Selection Geometry geom1: Dimension 1: All boundaries
46
EQUATIONS
Variables

Normal component
Boundaries 1,
semi.nD -semi.rho_s C/m² of the electric
4
displacement field
Electric potential at Boundaries 1,
semi.nV V-semi.dc_n*semi.nE V
boundary 4
semi.nD/
Normal electric Boundaries 1,
semi.nE (epsilon0_const*semi.e V/m
field 4
psilonrs)
Boundary electron Boundaries 1,
semi.n_bnd semi.n_bnd_FV 1/m³
concentration 4
Boundary hole Boundaries 1,
semi.p_bnd semi.p_bnd_FV 1/m³
concentration 4
if(semi.n_bnd>1.0E-
semi.n_bnd 100[m^(- Boundary electron Boundaries 1,
1/m³
_num 3)],semi.n_bnd,1.0E- concentration 4
100[m^(-3)])
if(semi.p_bnd>1.0E-
semi.p_bnd 100[m^(- Boundary hole Boundaries 1,
1/m³
_num 3)],semi.p_bnd,1.0E- concentration 4
100[m^(-3)])
semi.nJn-
Total normal Boundaries 1,
semi.nJ semi.nJn_SR+semi.nJp- A/m²
current density 4
semi.nJp_SR
Outward normal
Boundaries 1,
semi.nJn 0 A/m² electron current + operation
4
density
Outward normal Boundaries 1,
semi.nJp 0 A/m² + operation
hole current density 4
Surface
semi.nJn_S recombination Boundaries 1,
0 A/m² + operation
R current density, 4
electrons
Surface
semi.nJp_S recombination Boundaries 1,
0 A/m² + operation
R current density, 4
holes
semi.bc_ga 1 1 Electron Boundaries 1,
47
mma_n degeneracy factor 4
semi.bc_ga Hole degeneracy Boundaries 1,
1 1
mma_p factor 4
Electron
Boundaries 1,
semi.bc_Gn 1 1 degeneracy
4
function
Hole degeneracy Boundaries 1,
semi.bc_Gp 1 1
function 4
Electron
nonequilibrium
semi.bc_Qt Boundaries 1,
2*semi.Vth*semi.mun m²/s contribution to the
hn 4
thermal diffusion
coefficient
Hole
nonequilibrium
semi.bc_Qt Boundaries 1,
2*semi.Vth*semi.mup m²/s contribution to the
hp 4
thermal diffusion
coefficient
Electron
nonequilibrium
Boundaries 1,
semi.bc_Qn 2*semi.Vth*semi.mun m²/s contribution to the
4
thermal diffusion
coefficient
Hole
nonequilibrium
Boundaries 1,
semi.bc_Qp 2*semi.Vth*semi.mup m²/s contribution to the
4
thermal diffusion
coefficient
SG diffusive term
semi.mun*semi.Vth*se Boundaries 1,
semi.bc_Dn m²/s for electrons at the
mi.Gn 4
boundaries
SG diffusive term
semi.mup*semi.Vth*se Boundaries 1,
semi.bc_Dp m²/s for holes at the
mi.Gp 4
boundaries
semi.bc_Dn semi.bc_Qn- Electron thermal Boundaries 1,
m²/s
_th 1.5*semi.bc_Dn diffusion coefficient 4
semi.bc_Dp semi.bc_Qp- Hole thermal Boundaries 1,
m²/s
_th 1.5*semi.bc_Dp diffusion coefficient 4
semi.bc_Vn semi.mun*semi.nE- m/s SG convective term Boundaries 1,
semi.mun*semi.bc_gra for electrons at the 4
d_chi- boundaries
semi.bc_Dn*semi.bc_gr
ad_logNc+semi.bc_Dn_
48
th*(d(semi.Tl,X)*semi.n
gX+d(semi.Tl,Y)*semi.n
gY)/semi.Tl
semi.mup*semi.nE-
semi.mup*semi.bc_gra
d_chi-
semi.mup*semi.bc_gra SG convective term
Boundaries 1,
semi.bc_Vp d_Eg+semi.bc_Dp*semi m/s for holes at the
4
.bc_grad_logNv- boundaries
semi.bc_Dp_th*(d(semi.
Tl,X)*semi.ngX+d(semi.
Tl,Y)*semi.ngY)/semi.Tl
SG exponential
Boundaries 1,
semi.bc_An exp(semi.bc_An_expo) 1 term for electrons
4
at the boundaries
SG exponential
Boundaries 1,
semi.bc_Ap exp(semi.bc_Ap_expo) 1 term for holes at
4
the boundaries
- SG exponent for
semi.bc_An Boundaries 1,
semi.bc_Vn*semi.dc_n/ 1 electrons at the
_expo 4
semi.bc_Dn boundaries
SG exponent for
semi.bc_Ap semi.bc_Vp*semi.dc_n/ Boundaries 1,
1 holes at the
_expo semi.bc_Dp 4
boundaries
if(abs(semi.bc_An_expo
Outward normal
semi.nJn_F )<semi.global_flux_tol_s Boundaries 1,
A/m² electron current
V g,semi.nJn_C,semi.nJn_ 4
density
SG)
if(abs(semi.bc_Ap_expo
semi.nJp_F )<semi.global_flux_tol_s Outward normal Boundaries 1,
A/m²
V g,semi.nJp_C,semi.nJp_ hole current density 4
SG)
if(abs(semi.bc_An)<sem
i.global_flux_tol_sg,sem
i.nJn*semi.dc_n/
semi.n_bnd (e_const*semi.bc_Dn) Boundary electron Boundaries 1,
1/m³
_FV +semi.N,semi.nJn*(1- concentration 4
semi.bc_An)/
(e_const*semi.bc_Vn)
+semi.N*semi.bc_An)
semi.p_bnd if(abs(semi.bc_Ap)<sem 1/m³ Boundary hole Boundaries 1,
_FV i.global_flux_tol_sg,- concentration 4
semi.nJp*semi.dc_n/
(e_const*semi.bc_Dp)
49
+semi.P,semi.nJp*(1-
semi.bc_Ap)/
(e_const*semi.bc_Vp)
+semi.P*semi.bc_Ap)
-
e_const*semi.bc_Vn*(se
semi.nJn_S mi.n_bnd- SG normal current Boundaries 1,
A/m²
G semi.N*semi.bc_An)/ for electrons 4
semi.nJn_SG_denom_n
um
-
e_const*semi.bc_Vp*(se
semi.nJp_S mi.p_bnd- SG normal current Boundaries 1,
A/m²
G semi.P*semi.bc_Ap)/ for holes 4
semi.nJp_SG_denom_n
um
Denominator for
semi.nJn_S Boundaries 1,
-1+semi.bc_An 1 SG normal current
G_denom 4
for electrons
Denominator for
semi.nJp_S Boundaries 1,
-1+semi.bc_Ap 1 SG normal current
G_denom 4
for holes
if(abs(semi.nJn_SG_den
om)<semi.global_flux_t
ol_sg,if(sign(semi.nJn_S Numerical
semi.nJn_S
G_denom)==0,semi.glo denominator for SG Boundaries 1,
G_denom_n 1
bal_flux_tol_sg,sign(se normal current for 4
um
mi.nJn_SG_denom)*se electrons
mi.global_flux_tol_sg),s
emi.nJn_SG_denom)
if(abs(semi.nJp_SG_den
om)<semi.global_flux_t
ol_sg,if(sign(semi.nJp_S Numerical
semi.nJp_S
G_denom)==0,semi.glo denominator for SG Boundaries 1,
G_denom_n 1
bal_flux_tol_sg,sign(se normal current for 4
um
mi.nJp_SG_denom)*se holes
mi.global_flux_tol_sg),s
emi.nJp_SG_denom)
e_const*(-
semi.bc_Dn*(-
Centered difference
semi.n_bnd+semi.N)/ Boundaries 1,
semi.nJn_C A/m² normal current for
semi.dc_n+0.5*(semi.n_ 4
electrons
bnd+semi.N)*semi.bc_
Vn)
semi.nJp_C e_const*(semi.bc_Dp*(- A/m² Centered difference Boundaries 1,
50
semi.p_bnd+semi.P)/
semi.dc_n+0.5*(semi.p_ normal current for
4
bnd+semi.P)*semi.bc_V holes
p)
Shape functions
Shape
frame
semi.n_bn Discontinuous Boundary electron No
1/m³ Material
d Lagrange (Constant) concentration boundaries
semi.p_bn Discontinuous Boundary hole No
1/m³ Material
Weak Expressions

semi.nD*test(V)*semi.d 0 Material Boundaries 1, 4
-semi.nJn*test(Ne)*semi.d 0 Material Boundaries 1, 4
-semi.nJp*test(Ph)*semi.d 0 Material Boundaries 1, 4
2.4.6 Zero Charge 1
Zero Charge 1
SELECTION
51
EQUATIONS
2.4.7 Insulator Interface 1
Insulator Interface 1
SELECTION
EQUATIONS
Tunneling
SETTINGS
Description Value
Tunneling
None
type
52
Shape functions
Shape
frame
semi.n_bn Discontinuous Boundary electron No
1/m³ Material
semi.p_bn Discontinuous Boundary hole No
1/m³ Material
2.4.8 Continuity/Heterojunction 1
Continuity/Heterojunction 1
SELECTION
EQUATIONS
SETTINGS
Description Value
Continuation No
type continuation
53
Heterojunction
SETTINGS
Description Value
Continuity
Continuous quasi - Fermi levels
model
2.4.9 Initial Values 1
Initial Values 1
SELECTION
SETTINGS
Description Value
Automati
Specify initial values
c
54
2.4.10 Trap-Assisted Recombination 1
Trap-Assisted Recombination 1
SELECTION
Selection
Domain 1
EQUATIONS
Trap-Assisted Recombination
SETTINGS
Description Value
Trapping
Shockley - Read - Hall model
model
55
Shockley-Read-Hall Recombination
SETTINGS
Electron lifetime, SRH From material
Hole lifetime, SRH From material
Energy difference between the defect level and the intrinsic level 0 V
PROPERTIES FROM MATERIAL

Property Material Property group
Electron lifetime, SRH Si - Silicon Shockley-Read-Hall recombination
Hole lifetime, SRH Si - Silicon Shockley-Read-Hall recombination
Variables

Recombination
semi.Un semi.Rsrh 1/(m³·s) rate for Domain 1 + operation
electrons
Recombination
semi.Up semi.Rsrh 1/(m³·s) Domain 1 + operation
rate for holes
Continuation
semi.tar1.cp 1 1 Domain 1
parameter
semi.gamma_n*s
Modified
emi.ni_eff*exp(se
semi.n1 1/m³ electron Domain 1
mi.Delta_Et/
concentration
semi.Vth)
semi.gamma_p*s
emi.ni_eff*exp(- Modified hole
semi.p1 1/m³ Domain 1
semi.Delta_Et/ concentration
semi.Vth)
Electron lifetime,
semi.taun material.taun s Domain 1 Meta
SRH
Hole lifetime,
semi.taup material.taup s Domain 1 Meta
SRH
Energy
difference
between the
semi.Delta_Et 0[V] V Domain 1
defect level and
the intrinsic
level
semi.Rsrh (semi.N_num*se 1/(m³·s) Shockley-Read- Domain 1
mi.P_num- Hall
56
semi.ni_mod^2)/
(semi.taup*(semi.
recombination
N+semi.n1)+semi
term
.taun*(semi.P+se
mi.p1))
Valence band
semi.tar1.Ev0t semi.Ev0 V energy level for Domain 1
trap reference
Conduction
band energy
semi.tar1.Ec0t semi.Ec0 V Domain 1
level for trap
reference
Weak Expressions

e_const*semi.Rsrh*test(Ne)*semi.d 0 Material Domain 1
-e_const*semi.Rsrh*test(Ph)*semi.d 0 Material Domain 1
2.4.11 P
SELECTION
Selection
Domain 1
57
EQUATIONS
SETTINGS
Description Value
Continuation
Use doping and trap density continuation parameter
type
Distribution
SETTINGS
Description Value
Profile away from the
Gaussian
boundary
Impurity
SETTINGS
Impurity type Acceptor doping (p - type)
Acceptor concentration at boundary 1E27 1/m³
Profile
SETTINGS
Specify profile length scale Junction depth
Junction depth 5E-6 m
Background doping concentration User defined
Background doping concentration 1E21 1/m³
58
Variables

Donor
semi.Nd semi.gdm1.Nd 1/m³ Domain 1 + operation
concentration
Acceptor
semi.Na semi.gdm1.Na 1/m³ Domain 1 + operation
concentration
Doping and trap
semi.gdm1.cp_dt density
semi.cp_dtd 1 Domain 1
d continuation
parameter
semi.gdm1.Ngeo semi.gdm1.NAgen 1/m³ Specified doping Domain 1
semi.gdm1.Ngeo*exp
(-(semi.gdm1.D/ Distribution
semi.gdm1.Nd0 1/m³ Domain 1
semi.gdm1.ch_geo)^ number density
2)
semi.gdm1.jd_gen/ Characteristic
semi.gdm1.ch_ge sqrt(log(abs(semi.gd length for
m Domain 1
o m1.Ngeo/ distribution fall-
semi.gdm1.Nb_gen))) off
semi.gdm1.jd_ge
5[um] m Junction depth Domain 1
n
Acceptor
semi.gdm1.NAge
1.0E21[1/cm^3] 1/m³ concentration at Domain 1
n
boundary
Background
semi.gdm1.Nb_g
1.0E15[1/cm^3] 1/m³ doping Domain 1
en
concentration
sqrt(1.0E-50+(X-
root.comp1.semi.gd
Distance to the
m1.genext1(X))^2+
semi.gdm1.D m selected Domain 1
(Y-
boundaries
root.comp1.semi.gd
m1.genext1(Y))^2)
Donor
semi.gdm1.Nd 0 1/m³ Domain 1
concentration
semi.gdm1.cp_dtd*se Acceptor
semi.gdm1.Na 1/m³ Domain 1
mi.gdm1.Nd0 concentration
59
Boundary Selection for Doping Profile 1
SELECTION
Selection Geometry geom1: Dimension 1: Boundary 3
2.4.12 N
SELECTION
60
Selection
Domain 1
EQUATIONS
SETTINGS
Description Value
Continuation
Use doping and trap density continuation parameter
type
Distribution
SETTINGS
Description Value
Profile away from the
Gaussian
boundary
Impurity
SETTINGS
Impurity type Donor doping (n - type)
Donor concentration at boundary 1E27 1/m³
Profile
SETTINGS
Specify profile length scale Junction depth
Junction depth 5E-6 m
Background doping concentration User defined
Background doping concentration 1E21 1/m³
61
Variables

Donor
semi.Nd semi.gdm2.Nd 1/m³ Domain 1 + operation
concentration
Acceptor
semi.Na semi.gdm2.Na 1/m³ Domain 1 + operation
concentration
Doping and trap
semi.gdm2.cp_dt density
semi.cp_dtd 1 Domain 1
d continuation
parameter
semi.gdm2.Ngeo semi.gdm2.NDgen 1/m³ Specified doping Domain 1
semi.gdm2.Ngeo*exp
(-(semi.gdm2.D/ Distribution
semi.gdm2.Nd0 1/m³ Domain 1
semi.gdm2.ch_geo)^ number density
2)
semi.gdm2.jd_gen/ Characteristic
semi.gdm2.ch_ge sqrt(log(abs(semi.gd length for
m Domain 1
o m2.Ngeo/ distribution fall-
semi.gdm2.Nb_gen))) off
semi.gdm2.jd_ge
5[um] m Junction depth Domain 1
n
Donor
semi.gdm2.NDge
1.0E21[1/cm^3] 1/m³ concentration at Domain 1
n
boundary
Background
semi.gdm2.Nb_g
1.0E15[1/cm^3] 1/m³ doping Domain 1
en
concentration
sqrt(1.0E-50+(X-
root.comp1.semi.gd
Distance to the
m2.genext1(X))^2+
semi.gdm2.D m selected Domain 1
(Y-
boundaries
root.comp1.semi.gd
m2.genext1(Y))^2)
semi.gdm2.cp_dtd*se Donor
semi.gdm2.Nd 1/m³ Domain 1
mi.gdm2.Nd0 concentration
Acceptor
semi.gdm2.Na 0 1/m³ Domain 1
concentration
62
SELECTION
2.4.13 Metal Contact 1
Metal Contact 1
SELECTION
63
EQUATIONS
Terminal
SETTINGS
Terminal name 1
Terminal type Voltage
Voltage Va V
Contact resistance Off
Contact Type
SETTINGS
Descriptio
Value
n
Type Ideal ohmic
Variables

Normal
component of
epsilon0_const*semi.e
semi.nD C/m² the electric Boundary 3
psilonrs*semi.nE
displacement
field
semi.Vterm+circumce Electric potential
semi.nV V Boundary 3
nter(semi.V_eq) at boundary
-(semi.nV-V)/ Normal electric
semi.nE V/m Boundary 3
semi.dc_n field
Boundary
circumcenter(semi.n_e
semi.n_bnd 1/m³ electron Boundary 3
q)
concentration
circumcenter(semi.p_e Boundary hole
semi.p_bnd 1/m³ Boundary 3
q) concentration
64
if(semi.n_bnd>1.0E-
Boundary
semi.n_bnd_nu 100[m^(-
1/m³ electron Boundary 3
m 3)],semi.n_bnd,1.0E-
concentration
100[m^(-3)])
if(semi.p_bnd>1.0E-
semi.p_bnd_nu 100[m^(- Boundary hole
1/m³ Boundary 3
m 3)],semi.p_bnd,1.0E- concentration
100[m^(-3)])
semi.nJn-
Total normal
semi.nJ semi.nJn_SR+semi.nJp A/m² Boundary 3
current density
-semi.nJp_SR
Outward normal
semi.nJn semi.nJn_FV A/m² electron current Boundary 3 + operation
density
Outward normal
semi.nJp semi.nJp_FV A/m² hole current Boundary 3 + operation
density
Surface
recombination
semi.nJn_SR 0 A/m² Boundary 3 + operation
current density,
electrons
Surface
recombination
semi.nJp_SR 0 A/m² Boundary 3 + operation
current density,
holes
Electron
semi.bc_gamm
1 1 degeneracy Boundary 3
a_n
factor
semi.bc_gamm Hole degeneracy
1 1 Boundary 3
a_p factor
Electron
semi.bc_Gn 1 1 degeneracy Boundary 3
function
Hole degeneracy
semi.bc_Gp 1 1 Boundary 3
function
Electron
nonequilibrium
contribution to
semi.bc_Qthn 2*semi.Vth*semi.mun m²/s Boundary 3
the thermal
diffusion
coefficient
semi.bc_Qthp 2*semi.Vth*semi.mup m²/s Hole Boundary 3
nonequilibrium
65
contribution to
the thermal
diffusion
coefficient
Electron
nonequilibrium
contribution to
semi.bc_Qn 2*semi.Vth*semi.mun m²/s Boundary 3
the thermal
diffusion
coefficient
Hole
nonequilibrium
contribution to
semi.bc_Qp 2*semi.Vth*semi.mup m²/s Boundary 3
the thermal
diffusion
coefficient
SG diffusive term
semi.mun*semi.Vth*se
semi.bc_Dn m²/s for electrons at Boundary 3
mi.Gn
the boundaries
SG diffusive term
semi.mup*semi.Vth*se
semi.bc_Dp m²/s for holes at the Boundary 3
mi.Gp
boundaries
Electron thermal
semi.bc_Qn-
semi.bc_Dn_th m²/s diffusion Boundary 3
1.5*semi.bc_Dn
coefficient
Hole thermal
semi.bc_Qp-
semi.bc_Dp_th m²/s diffusion Boundary 3
1.5*semi.bc_Dp
coefficient
semi.mun*semi.nE-
semi.mun*semi.bc_gra
d_chi- SG convective
semi.bc_Dn*semi.bc_g term for
semi.bc_Vn m/s Boundary 3
rad_logNc+semi.bc_D electrons at the
n_th*(d(semi.Tl,X)*sem boundaries
i.ngX+d(semi.Tl,Y)*se
mi.ngY)/semi.Tl
semi.bc_Vp semi.mup*semi.nE- m/s SG convective Boundary 3
semi.mup*semi.bc_gra term for holes at
d_chi- the boundaries
d_Eg+semi.bc_Dp*se
mi.bc_grad_logNv-
semi.bc_Dp_th*(d(sem
i.Tl,X)*semi.ngX+d(se
mi.Tl,Y)*semi.ngY)/
66
semi.Tl
SG exponential
term for
semi.bc_An exp(semi.bc_An_expo) 1 Boundary 3
electrons at the
boundaries
SG exponential
semi.bc_Ap exp(semi.bc_Ap_expo) 1 term for holes at Boundary 3
the boundaries
- SG exponent for
semi.bc_An_ex
semi.bc_Vn*semi.dc_n 1 electrons at the Boundary 3
po
/semi.bc_Dn boundaries
SG exponent for
semi.bc_Ap_ex semi.bc_Vp*semi.dc_n
1 holes at the Boundary 3
po /semi.bc_Dp
boundaries
if(abs(semi.bc_An_exp
Outward normal
o)<semi.global_flux_to
semi.nJn_FV A/m² electron current Boundary 3
l_sg,semi.nJn_C,semi.n
density
Jn_SG)
if(abs(semi.bc_Ap_exp
Outward normal
semi.nJp_FV A/m² hole current Boundary 3
l_sg,semi.nJp_C,semi.n
density
Jp_SG)
if(abs(semi.bc_An)<se
mi.global_flux_tol_sg,s
emi.nJn*semi.dc_n/
Boundary
(e_const*semi.bc_Dn)
semi.n_bnd_FV 1/m³ electron Boundary 3
+semi.N,semi.nJn*(1-
concentration
semi.bc_An)/
+semi.N*semi.bc_An)
if(abs(semi.bc_Ap)<se
mi.global_flux_tol_sg,-
semi.nJp*semi.dc_n/
(e_const*semi.bc_Dp) Boundary hole
semi.p_bnd_FV 1/m³ Boundary 3
+semi.P,semi.nJp*(1- concentration
semi.bc_Ap)/
+semi.P*semi.bc_Ap)
-
e_const*semi.bc_Vn*(s
SG normal
emi.n_bnd-
semi.nJn_SG A/m² current for Boundary 3
semi.N*semi.bc_An)/
electrons
semi.nJn_SG_denom_n
um
67
-
e_const*semi.bc_Vp*(s
emi.p_bnd- SG normal
semi.nJp_SG A/m² Boundary 3
semi.P*semi.bc_Ap)/ current for holes
semi.nJp_SG_denom_n
um
Denominator for
semi.nJn_SG_d SG normal
-1+semi.bc_An 1 Boundary 3
enom current for
electrons
Denominator for
semi.nJp_SG_d
-1+semi.bc_Ap 1 SG normal Boundary 3
enom
current for holes
if(abs(semi.nJn_SG_de
nom)<semi.global_flu
x_tol_sg,if(sign(semi.nJ Numerical
n_SG_denom)==0,se denominator for
semi.nJn_SG_d
mi.global_flux_tol_sg,s 1 SG normal Boundary 3
enom_num
ign(semi.nJn_SG_deno current for
m)*semi.global_flux_t electrons
ol_sg),semi.nJn_SG_de
nom)
if(abs(semi.nJp_SG_de
x_tol_sg,if(sign(semi.nJ
Numerical
p_SG_denom)==0,se
semi.nJp_SG_d denominator for
mi.global_flux_tol_sg,s 1 Boundary 3
enom_num SG normal
ign(semi.nJp_SG_deno
current for holes
m)*semi.global_flux_t
ol_sg),semi.nJp_SG_de
nom)
e_const*(-
semi.bc_Dn*(- Centered
semi.n_bnd+semi.N)/ difference normal
semi.nJn_C A/m² Boundary 3
semi.dc_n+0.5*(semi.n current for
_bnd+semi.N)*semi.bc electrons
_Vn)
e_const*(semi.bc_Dp*(
-
Centered
semi.p_bnd+semi.P)/
semi.nJp_C A/m² difference normal Boundary 3
semi.dc_n+0.5*(semi.p
current for holes
_bnd+semi.P)*semi.bc
_Vp)
semi.delta_nJn 0 1 Extra current Boundary 3
fraction,
68
electrons
Extra current
semi.delta_nJp 0 1 Boundary 3
fraction, holes
Terminal voltage
underneath
circumcenter(semi.mc
semi.Vterm V contact Boundary 3
1.V0)
resistance layer
(if present)
semi.mc1.V0 Va V Voltage Boundary 3
-
semi.I0_1 semi.mc1.int(semi.d*(s A Terminal current Global Meta
emi.nJ+semi.dnD_dt))
semi.I0_1/ Average terminal
semi.J0_1 A/m² Global Meta
semi.mc1.int(semi.d) current density
semi.mc1.int(semi.mc1
semi.V0_1 V Terminal voltage Global Meta
.V0)/semi.mc1.int(1)
Weak Expressions
Integration Integration
Weak expression Selection
order frame
Boundary
semi.nD*test(V)*semi.d 0 Material
3
Boundary
-semi.nJn*test(Ne)*semi.d 0 Material
3
Boundary
-semi.nJp*test(Ph)*semi.d 0 Material
3
69
2.4.14 Metal Contact 2
Metal Contact 2
SELECTION
EQUATIONS
Terminal
SETTINGS
Terminal name 2
Terminal type Voltage
Voltage 0 V
Contact resistance Off
Contact Type
SETTINGS
70
Descriptio
Value
n
Type Ideal ohmic
Variables

Normal
component of
epsilon0_const*semi.e
semi.nD C/m² the electric Boundary 2
psilonrs*semi.nE
displacement
field
semi.Vterm+circumce Electric potential
semi.nV V Boundary 2
nter(semi.V_eq) at boundary
-(semi.nV-V)/ Normal electric
semi.nE V/m Boundary 2
semi.dc_n field
Boundary
circumcenter(semi.n_e
semi.n_bnd 1/m³ electron Boundary 2
q)
concentration
circumcenter(semi.p_e Boundary hole
semi.p_bnd 1/m³ Boundary 2
q) concentration
if(semi.n_bnd>1.0E-
Boundary
semi.n_bnd_nu 100[m^(-
1/m³ electron Boundary 2
m 3)],semi.n_bnd,1.0E-
concentration
100[m^(-3)])
if(semi.p_bnd>1.0E-
semi.p_bnd_nu 100[m^(- Boundary hole
1/m³ Boundary 2
m 3)],semi.p_bnd,1.0E- concentration
100[m^(-3)])
semi.nJn-
Total normal
semi.nJ semi.nJn_SR+semi.nJp A/m² Boundary 2
current density
-semi.nJp_SR
Outward normal
semi.nJn semi.nJn_FV A/m² electron current Boundary 2 + operation
density
Outward normal
semi.nJp semi.nJp_FV A/m² hole current Boundary 2 + operation
density
Surface
recombination
semi.nJn_SR 0 A/m² Boundary 2 + operation
current density,
electrons
semi.nJp_SR 0 A/m² Surface Boundary 2 + operation
recombination
71
current density,
holes
Electron
semi.bc_gamm
1 1 degeneracy Boundary 2
a_n
factor
semi.bc_gamm Hole degeneracy
1 1 Boundary 2
a_p factor
Electron
semi.bc_Gn 1 1 degeneracy Boundary 2
function
Hole degeneracy
semi.bc_Gp 1 1 Boundary 2
function
Electron
nonequilibrium
contribution to
semi.bc_Qthn 2*semi.Vth*semi.mun m²/s Boundary 2
the thermal
diffusion
coefficient
Hole
nonequilibrium
contribution to
semi.bc_Qthp 2*semi.Vth*semi.mup m²/s Boundary 2
the thermal
diffusion
coefficient
Electron
nonequilibrium
contribution to
semi.bc_Qn 2*semi.Vth*semi.mun m²/s Boundary 2
the thermal
diffusion
coefficient
Hole
nonequilibrium
contribution to
semi.bc_Qp 2*semi.Vth*semi.mup m²/s Boundary 2
the thermal
diffusion
coefficient
SG diffusive term
semi.mun*semi.Vth*se
semi.bc_Dn m²/s for electrons at Boundary 2
mi.Gn
the boundaries
SG diffusive term
semi.mup*semi.Vth*se
semi.bc_Dp m²/s for holes at the Boundary 2
mi.Gp
boundaries
semi.bc_Dn_th semi.bc_Qn- m²/s Electron thermal Boundary 2
1.5*semi.bc_Dn diffusion
72
coefficient
Hole thermal
semi.bc_Qp-
semi.bc_Dp_th m²/s diffusion Boundary 2
1.5*semi.bc_Dp
coefficient
semi.mun*semi.nE-
semi.mun*semi.bc_gra
d_chi- SG convective
semi.bc_Dn*semi.bc_g term for
semi.bc_Vn m/s Boundary 2
rad_logNc+semi.bc_D electrons at the
n_th*(d(semi.Tl,X)*sem boundaries
i.ngX+d(semi.Tl,Y)*se
mi.ngY)/semi.Tl
semi.mup*semi.nE-
d_chi-
SG convective
d_Eg+semi.bc_Dp*se
semi.bc_Vp m/s term for holes at Boundary 2
mi.bc_grad_logNv-
the boundaries
semi.bc_Dp_th*(d(sem
i.Tl,X)*semi.ngX+d(se
mi.Tl,Y)*semi.ngY)/
semi.Tl
SG exponential
term for
semi.bc_An exp(semi.bc_An_expo) 1 Boundary 2
electrons at the
boundaries
SG exponential
semi.bc_Ap exp(semi.bc_Ap_expo) 1 term for holes at Boundary 2
the boundaries
- SG exponent for
semi.bc_An_ex
semi.bc_Vn*semi.dc_n 1 electrons at the Boundary 2
po
/semi.bc_Dn boundaries
SG exponent for
semi.bc_Ap_ex semi.bc_Vp*semi.dc_n
1 holes at the Boundary 2
po /semi.bc_Dp
boundaries
if(abs(semi.bc_An_exp
Outward normal
semi.nJn_FV A/m² electron current Boundary 2
l_sg,semi.nJn_C,semi.n
density
Jn_SG)
if(abs(semi.bc_Ap_exp
Outward normal
semi.nJp_FV A/m² hole current Boundary 2
l_sg,semi.nJp_C,semi.n
density
Jp_SG)
semi.n_bnd_FV if(abs(semi.bc_An)<se 1/m³ Boundary Boundary 2
73
emi.nJn*semi.dc_n/
(e_const*semi.bc_Dn)
electron
+semi.N,semi.nJn*(1-
concentration
semi.bc_An)/
+semi.N*semi.bc_An)
if(abs(semi.bc_Ap)<se
mi.global_flux_tol_sg,-
semi.nJp*semi.dc_n/
(e_const*semi.bc_Dp) Boundary hole
semi.p_bnd_FV 1/m³ Boundary 2
+semi.P,semi.nJp*(1- concentration
semi.bc_Ap)/
+semi.P*semi.bc_Ap)
-
e_const*semi.bc_Vn*(s
SG normal
emi.n_bnd-
semi.nJn_SG A/m² current for Boundary 2
semi.N*semi.bc_An)/
electrons
semi.nJn_SG_denom_n
um
-
e_const*semi.bc_Vp*(s
emi.p_bnd- SG normal
semi.nJp_SG A/m² Boundary 2
semi.P*semi.bc_Ap)/ current for holes
semi.nJp_SG_denom_n
um
Denominator for
semi.nJn_SG_d SG normal
-1+semi.bc_An 1 Boundary 2
enom current for
electrons
Denominator for
semi.nJp_SG_d
-1+semi.bc_Ap 1 SG normal Boundary 2
enom
current for holes
if(abs(semi.nJn_SG_de
x_tol_sg,if(sign(semi.nJ Numerical
n_SG_denom)==0,se denominator for
semi.nJn_SG_d
mi.global_flux_tol_sg,s 1 SG normal Boundary 2
enom_num
ign(semi.nJn_SG_deno current for
m)*semi.global_flux_t electrons
ol_sg),semi.nJn_SG_de
nom)
semi.nJp_SG_d if(abs(semi.nJp_SG_de 1 Numerical Boundary 2
enom_num nom)<semi.global_flu denominator for
74
x_tol_sg,if(sign(semi.nJ
p_SG_denom)==0,se
SG normal
ign(semi.nJp_SG_deno
current for holes
m)*semi.global_flux_t
ol_sg),semi.nJp_SG_de
nom)
e_const*(-
semi.bc_Dn*(- Centered
semi.n_bnd+semi.N)/ difference normal
semi.nJn_C A/m² Boundary 2
semi.dc_n+0.5*(semi.n current for
_bnd+semi.N)*semi.bc electrons
_Vn)
e_const*(semi.bc_Dp*(
-
Centered
semi.p_bnd+semi.P)/
semi.nJp_C A/m² difference normal Boundary 2
semi.dc_n+0.5*(semi.p
current for holes
_bnd+semi.P)*semi.bc
_Vp)
Extra current
semi.delta_nJn 0 1 fraction, Boundary 2
electrons
Extra current
semi.delta_nJp 0 1 Boundary 2
fraction, holes
Terminal voltage
underneath
circumcenter(semi.mc
semi.Vterm V contact Boundary 2
2.V0)
resistance layer
(if present)
semi.mc2.V0 0[V] V Voltage Boundary 2
-
semi.I0_2 semi.mc2.int(semi.d*(s A Terminal current Global Meta
emi.nJ+semi.dnD_dt))
semi.I0_2/ Average terminal
semi.J0_2 A/m² Global Meta
semi.mc2.int(semi.d) current density
semi.mc2.int(semi.mc2
semi.V0_2 V Terminal voltage Global Meta
.V0)/semi.mc2.int(1)
Weak Expressions
order frame
Boundary
semi.nD*test(V)*semi.d 0 Material
2
75
order frame
Boundary
-semi.nJn*test(Ne)*semi.d 0 Material
2
Boundary
-semi.nJp*test(Ph)*semi.d 0 Material
2
2.5 MESH 1
Mesh 1
MESH STATISTICS
Description Value
Complete
Status
mesh
Mesh vertices 3120
Quads 3003
Edge elements 232
Vertex elements 4
Number of elements 3003
Minimum element
1
quality
Average element
1
quality
Element area ratio 1
Mesh area 50 µm²
76
2.5.1 Size (size)
SETTINGS
Description Value
Semiconduct
Calibrate for
or
Maximum element size 0.13
Minimum element size 0.02
Curvature factor 0.3
Maximum element growth
1.15
rate
2.5.2 Free Quad 1 (fq1)
SELECTION
Remainin
Selection
g
Free Quad 1
SETTINGS
Description Value
Number of iterations 4
Maximum element depth to process 4
Last build time 0
77
Description Value
COMSOL 6.1.0.282 (win64)|2024 - 05 -
Built with
14T16:30:35.300742400
78
3 Study 1
COMPUTATION INFORMATION
Computation
47 s
time
3.1 TIME DEPENDENT

Times Unit
range(0,0.01,1) µs
STUDY SETTINGS
Description Value
Include geometric nonlinearity Off
STUDY SETTINGS
Description Value
Time unit µs
{0, 0.01, 0.02, 0.03, 0.04, 0.05, 0.06, 0.07, 0.08, 0.09, 0.1, 0.11, 0.12, 0.13, 0.14, 0.15,
0.16, 0.17, 0.18, 0.19, 0.2, 0.21, 0.22, 0.23, 0.24, 0.25, 0.26, 0.27, 0.28, 0.29, 0.3, 0.31,
0.32, 0.33, 0.34, 0.35, 0.36, 0.37, 0.38, 0.39, 0.4, 0.41, 0.42, 0.43, 0.44, 0.45, 0.46, 0.47,
Output times 0.48, 0.49, 0.5, 0.51, 0.52, 0.53, 0.54, 0.55, 0.56, 0.57, 0.58, 0.59, 0.6, 0.61, 0.62, 0.63,
0.64, 0.65, 0.66, 0.67, 0.68, 0.69, 0.7, 0.71, 0.72, 0.73, 0.74, 0.75, 0.76, 0.77, 0.78, 0.79,
0.8, 0.81, 0.82, 0.83, 0.84, 0.85, 0.86, 0.87, 0.88, 0.89, 0.9, 0.91, 0.92, 0.93, 0.94, 0.95,
0.96, 0.97, 0.98, 0.99, 1}
PHYSICS AND VARIABLES SELECTION

Physics interface Solve for Equation form
Semiconductor
On Automatic (Time dependent)
(semi)
MESH SELECTION
Componen
Mesh
t
Component
Mesh 1
1
79
3.2 SOLVER CONFIGURATIONS
3.2.1 Solution 2
Compile Equations: Time Dependent (st1)
STUDY AND STEP

Description Value
Use study
Use study Time
step Dependent
LOG
<---- Compile Equations: Time Dependent in Study 1/Solution 2 (sol2) -----------
Started at May 14, 2024, 5:34:57 PM.
Geometry shape function: Linear Lagrange
Running on Intel64 Family 6 Model 141 Stepping 1, GenuineIntel.
Using 1 socket with 8 cores in total on MSI.
Available memory: 24.28 GB.
Time: 1 s.
Physical memory: 1.75 GB
Virtual memory: 2.23 GB
Ended at May 14, 2024, 5:34:58 PM.
----- Compile Equations: Time Dependent in Study 1/Solution 2 (sol2) ---------->
Dependent Variables 1 (v1)
GENERAL
Description Value
Defined by study
step
RESIDUAL SCALING
Descriptio
Value
n
Method Manual
INITIAL VALUE CALCULATION CONSTANTS

Constant
Initial value source
name
t range(0,0.01,1)
timestep 0.001[µs]
LOG
80
<---- Dependent Variables 1 in Study 1/Solution 2 (sol2) -----------------------
Started at May 14, 2024, 5:34:58 PM.
Solution time: 0 s.
Physical memory: 1.75 GB
Virtual memory: 2.23 GB
Ended at May 14, 2024, 5:34:58 PM.
----- Dependent Variables 1 in Study 1/Solution 2 (sol2) ---------------------->
Electron solution variable (comp1.Ne) (comp1_Ne)
GENERAL
Description Value
Field comp1.
components Ne
Hole solution variable (comp1.Ph) (comp1_Ph)
GENERAL
Description Value
Field comp1.P
components h
Boundary electron concentration (comp1.semi.n_bnd) (comp1_semi_n_bnd)
GENERAL
Description Value
Field comp1.semi.n_b
components nd
Boundary hole concentration (comp1.semi.p_bnd) (comp1_semi_p_bnd)
GENERAL
Description Value
Field comp1.semi.p_b
components nd
Electric potential (comp1.V) (comp1_V)
GENERAL
Description Value
Field comp1.
components V
81
Time-Dependent Solver 1 (t1)
GENERAL
Description Value
Defined by study step
Time unit µs
{0, 0.01, 0.02, 0.03, 0.04, 0.05, 0.06, 0.07, 0.08, 0.09, 0.1, 0.11, 0.12, 0.13,
0.14, 0.15, 0.16, 0.17, 0.18, 0.19, 0.2, 0.21, 0.22, 0.23, 0.24, 0.25, 0.26, 0.27,
0.28, 0.29, 0.3, 0.31, 0.32, 0.33, 0.34, 0.35, 0.36, 0.37, 0.38, 0.39, 0.4, 0.41,
0.42, 0.43, 0.44, 0.45, 0.46, 0.47, 0.48, 0.49, 0.5, 0.51, 0.52, 0.53, 0.54, 0.55,
Output times
0.56, 0.57, 0.58, 0.59, 0.6, 0.61, 0.62, 0.63, 0.64, 0.65, 0.66, 0.67, 0.68, 0.69,
0.7, 0.71, 0.72, 0.73, 0.74, 0.75, 0.76, 0.77, 0.78, 0.79, 0.8, 0.81, 0.82, 0.83,
0.84, 0.85, 0.86, 0.87, 0.88, 0.89, 0.9, 0.91, 0.92, 0.93, 0.94, 0.95, 0.96, 0.97,
0.98, 0.99, 1}
Relative tolerance 1E-5
ABSOLUTE TOLERANCE
Tolerance Tolerance
Derivative
Tolerance Tolerance for time for time
Field Method tolerance Tolerance
method factor derivative derivative
method
s s
Electron
solution
Use
variable Factor 0.1 Automatic 1 0.001 0.001
global
(comp1.N
e)
Hole
solution
Use
variable Factor 0.1 Automatic 1 0.001 0.001
global
(comp1.Ph
)
Boundary
electron
concentrat Use
Factor 0.1 Automatic 1 0.001 0.001
ion global
(comp1.se
mi.n_bnd)
Boundary
hole
concentrat Use
Factor 0.1 Automatic 1 0.001 0.001
ion global
(comp1.se
mi.p_bnd)
Electric Use Factor 0.1 Automatic 1 0.001 0.001
potential global
82
Tolerance Tolerance
Derivative
Tolerance Tolerance for time for time
Field Method tolerance Tolerance
method factor derivative derivative
method
s s
(comp1.V)
TIME STEPPING
Description Value
Steps taken by solver Strict
Advanced (aDef)
ASSEMBLY SETTINGS
Description Value
Reuse sparsity pattern On
Drop tolerance for local matrix contributions 0
Fully Coupled 1 (fc1)
GENERAL
Description Value
Linear solver
METHOD AND TERMINATION

Description Value
Nonlinear Automatic
method (Newton)
Direct 1 (d1)
GENERAL
Descriptio
Value
n
Out-of-
Off
core
ERROR
Description Value
Check error estimate No
83
4 Results
4.1 DATASETS
4.1.1 Study 1/Solution 2
SOLUTION
Descriptio
Value
n
Solution
Componen Component 1
t (comp1)
Dataset: Study 1/Solution 2
4.2 TABLES
4.2.1 Evaluation 2D
Interactive 2D values
x y Value
1.9586 7.0227 3.8872E9
1.5737 0.11354 3.8872E9
3.4255 0.074144 3.8872E9
1.3964 0.093844 3.8872E9
84
x y Value
2.1751 0.35178 7.7229E11
2.1751 0.19471 7.8481E11
2.2648 9.9551 8.1749E9
1.6086 3.5532 3.8872E9
2.8325 5.5484 3.8872E9
0.56907 5.6154 3.8872E9
2.5642 9.7902 3.8872E9
3.4474 5.266 3.8872E9
2.3838 7.3223 3.8872E9
1.0462 0.047208 -4.6225
1.8804 0.011992 -4.6225
2.0842 0.57434 -4.6225
0.004962
2.1018 -4.6225
5
1.9293 8.2452 36.383
2.0094 2.6215 1.5411E17
2.4962 5.1109 5.2604E9
2.9145 8.0346 -15894
1.9894 1.2185 -1723.9
2.0625 8.5701 -14210
2.2085 1.3402 -2083.7
2.2085 1.3402 -2083.7
2.1112 6.8174 -1.4493E5
2.598 7.4747 -29869
2.5006 5.0404 -8.536E11
-
1.8677 4.8943
7.4556E11
-
3.2553 4.943
8.2609E11
2.7197 2.5574 -24411
2.5737 7.3043 -41918
85
4.3 PLOT GROUPS
4.3.1 Electron Concentration (semi) 1
Surface: Electron concentration (1/cm3)
4.3.2 Hole Concentration (semi) 1
Surface: Hole concentration (1/cm3)
86
4.3.3 Electric Potential (semi) 1
Surface: Electric potential (V)
87

Diode Simulation Comsuol

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Report date May 14, 2024, 5:45:42 PM

1.2 SHARED PROPERTIES

1.2.1 Default Model Inputs

SPATIAL FRAME COORDINATES

MATERIAL FRAME COORDINATES

GEOMETRY FRAME COORDINATES

MESH FRAME COORDINATES

2.1.1 Coordinate Systems

Coordinate system Boundary

2.2.1 Rectangle 1 (r1)

2.4.3 Weak Expressions

2.4.4 Semiconductor Material Model 1

Semiconductor Material Model 1

Band Gap Narrowing

PROPERTIES FROM MATERIAL

Name Expression Unit Description Selection Details

Weak expression Integration order Integration frame Selection

Name Expression Unit Description Selection Details

Weak expression Integration order Integration frame Selection

2.4.6 Zero Charge 1

2.4.7 Insulator Interface 1

2.4.9 Initial Values 1

PROPERTIES FROM MATERIAL

Name Expression Unit Description Selection Details

Weak expression Integration order Integration frame Selection

Name Expression Unit Description Selection Details

Boundary Selection for Doping Profile 1

Name Expression Unit Description Selection Details

Boundary Selection for Doping Profile 1

2.4.13 Metal Contact 1

Name Expression Unit Description Selection Details

Name Expression Unit Description Selection Details

2.5.2 Free Quad 1 (fq1)

3.1 TIME DEPENDENT

PHYSICS AND VARIABLES SELECTION

Compile Equations: Time Dependent (st1)

STUDY AND STEP

Dependent Variables 1 (v1)

INITIAL VALUE CALCULATION CONSTANTS

Electron solution variable (comp1.Ne) (comp1_Ne)

Hole solution variable (comp1.Ph) (comp1_Ph)

Boundary electron concentration (comp1.semi.n_bnd) (comp1_semi_n_bnd)

Boundary hole concentration (comp1.semi.p_bnd) (comp1_semi_p_bnd)

Electric potential (comp1.V) (comp1_V)

Fully Coupled 1 (fc1)

METHOD AND TERMINATION

4.1.1 Study 1/Solution 2

Dataset: Study 1/Solution 2

4.3.1 Electron Concentration (semi) 1

Surface: Electron concentration (1/cm3)

4.3.2 Hole Concentration (semi) 1

Surface: Hole concentration (1/cm3)

Surface: Electric potential (V)

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