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A solar cell is composed of two kinds of semiconductors, which are p-type and n-
type silicon.
The p-type silicon has atoms—like boron or gallium—that have one electron less
in their outermost energy level than silicon does. This means that boron has one
electron missing to form bonds with the nearby silicon atoms, creating an electron
gap or “hole”.
The n-type silicon has atoms that have one extra electron in their outermost level
than silicon does, such as phosphorus. Phosphorus has five electrons in its
outermost level, not four. It forms bonds with its neighboring silicon atoms, but
one electron is not part of the bonding. Instead, it can move freely within the
silicon structure.
Figure 1. Schematic representation of a solar cell, showing the n-type and p-type layers, with a close-
up view of the depletion zone around the junction between the n-type and p-type layers.
A solar cell has a layer of p-type silicon next to a layer of n-type silicon (Fig. 1). In
the n-type layer, there are more electrons than holes, and in the p-type layer, there
are more holes than electrons. Near the boundary of the two layers, the electrons
on one side of the boundary (n-type layer) fill the holes on the other side of the
boundary (p-type layer). This creates an area around the boundary, called the
depletion zone, where the electrons fill the holes.
When all the holes are occupied by electrons in the depletion zone, the p-type side
of the depletion zone (where holes were originally present) now has negative ions,
and the n-type side of the depletion zone (where electrons were originally present)
now has positive ions. The existence of these opposite ions creates an internal
electric field that stops electrons in the n-type layer from filling holes in the p-type
layer.
When sunlight strikes a solar cell, electrons in the silicon are freed, which causes
the formation of “holes”—the empty spaces left by the leaving electrons. If this
happens in the electric field, the field will push electrons to the n-type layer and
holes to the p-type layer. If you connect the n-type and p-type layers with a metal
wire, the electrons will go from the n-type layer to the p-type layer by crossing the
depletion zone and then go through the external wire back to the n-type layer,
generating a current of electricity.
2. Loss of material
For the single crystal silicon to be modulus, it needs to be sliced in
wafers of thickness ranging from 200-300 um. For this purpose, an inner
diameter saw is used. This saw employs diamond particles on its blade for
sawing the ingots into fine wafers. It is difficult to employ any kind of saw
mechanism, because at the desired thickness level of the wafers (200-300 μm),
they tend to break easily. However, while the wafers are manufactured using
this mechanism, about 50% of the produced silicon gets lost as sawdust, mainly
due to the sawing in this process.
Polycrystalize silicon:
The photon with different wavelength strikes the surface of photovoltaic
cell, it creates an electron-hole pair. In the case of a hole formed at the p-n
junction, electrons coming from the top surface are captured by the holes on the
top surface and in the same way, the holes created in the bottom layers will capture
the electrons coming from the junction. These overall decreases electron flow
resulting in an overall decrease in the current generated in the cell. This is a
common problem with crystalline silicon cells because they are made thicker than
others. Thus, a lot of recombinational loss occurs which decreases the overall
efficiency.
Amorphous silicon:
Thin film solar cells are seen as competitors to crystallize silicon due to
their cost and efficiency tradeoff. However, there are several major aspects of
amorphous silicon that require further development:
1. A poor minority-carrier lifetime
2. Degradation of cell performance due to illumination
3. Difficulty in materials dopant and
4. Poor-quality alloys.
For decreasing the reflectance of the surface of the crystalline silicon cells,
newer antireflective materials are being considered. One of them is silicon
nitride, which promises a lower reflectance. Also, for decreasing reflectance,
another recent development is etching of the surface of the silicon cell to
give it an irregular dented surface. This is done by using a solution of
sodium hydroxide or potassium hydroxide (10-30% concentration) to
acidify and corrode the surface.
Alternative to Silicon
Alternatives for silicon Along with the change in manufacturing method,
alternatives for silicon are also being considered. Material like Gallium
Arsenic (GaAs), Cadmium Telluride (CdTe), CopperIndium: Diselenide
(CIS) and Copper-Indium: Gallium-Diselenide (CIGS) is also being
considered as the replacement for silicon in the solar cells.
Along with these materials, research has been developing for the use of
organic and nonocrystalline particles in photovoltaic cells. Organic
photovoltaic cells (OPV) have became highly popular in the last decade.
Among all of OPV cells, a lot of research has been being done throughout
the last decade on polymer/fullerene based solar cells. During this process,
progress was made on the design of the side chains that control the physical
properties of polymer semiconductors, such as PPV, which had a twofold
impact. On one hand, chiral side chains prevented polymer–polymer
aggregation, while on another hand, side chains improved the solubility of
the polymers. Furthermore, it was also experienced that the use of
chlorobenzene instead of tolurene in the cell helped to increase the current
flowing through the junction. It was found there was a very high energy
band in PPV, which initiated further research.