Tunnel Diode

A Tunnel diode is a heavily doped p-n junction diode which displays a negative resistance
lrehavioqr in a specific region in its characteristic curve. By Negative resistance we mean that
in that
voltage is
region, the current flowing through the diode decreases as the voltage is increased. As the
increased from zero, the current through the diode increases, then it decreases, and then
lt agun
i.creases. The initial increase of current (before its decrease) is attributed to a phenomenon called
,,euantum Tunnelling,,. This is the reason for the particuLar name of this device. The tunnel diode is
and ampiifiers.
used as a fast switching device in computers as well as in high frequency oscillators

SJrmbol of Tunnel Diode

The symbol for Tunnel Diode is shown in the figure below'

Ca&cde

is a negatively
An anode is a positively charged electrode that attracts electrons. The Cathode
charged, electrode that emits electrons. ln a tunnel diode,
the anode is connected to p-We
semiconductor while the cathode is connected to n-type semiconductor.
Fiee *ie*tr<n --""".+ i
What is a Ttmnel Diode ()
littt --+
The Tunnel diode was inventedby Leo Esaki in 1958' Ileplstion rsgion
This is why it is also known as Esaki diode' Esaki I
t
N-type
F-type
observed that if a semiconductor is heavily doped with t) L)i si lal
i;l {' T
impurities, it a negative dynamic
exhibits resistance. I
I
&
I

oir T
aii I
I

This means that the current through the o(l t !,1

device t
g I
I {i a
decreases as the voltage across it is increased' l'eo Esaki rl(& og
I
i. ee
got the Nobel Prtze in 1973 for discovering the
Nsgative ion Positive ion

quantum tunnelling effect causes this behavior in these

Tunnel diode
diocles. Quantum turnnclling ref'ers to a direct flow of
electrons across a thrnclepletion region from the n-side concluction
bandto the p-side valenceband'
are also made from other
Tunncl Diodes are gerlerally construcled from Germanium. But they
-\
fypes of materials such as gallium arsenide, galligm antirnonide'
and silicorr'

Width of the depletion rcgqotintunnel drcdre

'Ihe depletion region is a region that exists orr both sides of a p-njunction which' is devoid of
acts as a potentialba'-rtq that opposes
rnobile charge carriers (t'ree clectrons and Holes). This region
the f.low of electrons from the n-side to p-side and of holes
from the p-side to n-side. only those very
 When a f.orward bias voTtage is applied to the ordinary p-n junction diode, the width of
depletion region decreases and at the same time the baruiBr height also decreases. However, the
electrons in the n-type semiconductor cannot penetrate through the depletion layer because the
built-in voltage of depletion layer opposes the flow of electrons. If the applied voltage is greater than
the built-in voltage of depletionlayer, the electrons from n-side overcome the opposing force from
depletion layer and they enters into p-side. In simple words, the electrons can pass over the battiet
if the energy of the electrons is greater than the barrier height or batfier potential.
(ciepletion layer)
Therefore, an ordinary p-n junction diode produces electric current only if the applied voltage is
greater than the built-in voltage of the depletion region.
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Ec - Conduction band Ordinary p-n junction diode
Ev. Valance band
Eo. Energy gap

Electric current in a p-n junction diode'

When ordinary p-n junction diode, the width of
a forward bias voltage is applied to tlie
depletiol region decreases and at the same tirne tlie barrter height also decreases. However, the
electrons in the 1-type semiconctuctor cannot penetrate through the depletion layer because the
built-in voltage of depletionlayer opposes the llow of electrons. If the applied voltage is greater than
the built-in voltage of depletionlayer, the electrons from n-side overcome the opposing force from
depletion layer andthey enters into p-side. In simple words, the electrons can pass over thebaruiet
potential.
(dopletion layer) if the energy of the electrons is greater than the barfier height or batner
Tlrerefore, an ordrnary p-n junction diode produces electric current only if the applied voltage is
greater tl,an the built-in voltage of the depletion region'
Electric current in a tunnel diod€'
In tumel diode, the valence band and conduction band energy levels in the n-type
seniconclu clor are lower than the corresponcling levels in the p-type semiconductor. Unlike
the
Becauso of
ordinary p-n junction diode, the cliffcrence in ener:iJ* levels is very high in tunnel diode.
of
this high difference, the concluction band of the n-type material overlaps with the valetrce band
the p-lype material.
SW 2, Small voltage appltedto the tunnel diode
When a small voltage is applied to the tunnel diode which is less than the built-in voltage of the
depletion layer, no forward current flows through the junction.
Ho'wever, a small number of electrons in the conduction band of the n-region will tunnel to the
err,rpty states of the valence band rn p-region. This will create a small forward bias tunnel current.
'flrrrs, iunnel current starts flowing with a small application of voltage.

P-type N-type
F-type H-type
Ec

c
rir
tr L
t
(J
(J

Maximum tunne! eurrent

A small hrnnel currant
{
'

Vottag: {V} VolragoM

Smalltunnel current Maximum tunnel current

Step 3, Applied voltage is slightly incrcased

When the voltage appliedto the tunnel diode is slightly increased, alarge number of free electrons at
n-side and holes at p-side are generated. Because of the increase in voltage, the overlapping of the
conduction band and, valence band is increased. In simple words, the energy level of an n-side
conduction band becornes exactly equal to the energy level of a p-side valence band. As a result,
maximum tunnel current flows.
Step 4, Applied voltage is further increased
If the applied voltage is f'urther increascd, a slight misalign of the conduction band andvalenceband
takes place. Since the conduction bancl of the n-type matenal andthe valence band of the p-type
material sill overlap. The electrons tunnel from the conduction bandof n-region to the valenceband
of p-region and cause a small current flow. Thus, the tumeling currertt starts decreasing'
Step 5, Applied voltage is largely increased
If thc to zeto. At this point, the
applied voltage is largely increasecl, the tunneling curretrt drops
concluction band, and valence band no longer overlap and the tunnel diode operates in the same