DATA SHEET

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MOSFET – Power, Single V(BR)DSS RDS(ON) MAX ID MAX

N-Channel 40 V 1.39 mW @ 10 V 386 A

40 V, 1.39 mW, 386 A

NVMJST1D3N04C D (6,7,8,9,10,TOP)

Features
• Small Footprint (5x7 mm) for Compact Design
G (1)
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
S (2,3,4,5)
• TCPAK57 5x7 Top Cool Package
N−CHANNEL MOSFET
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 40 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain TC = 25°C ID 386 A
Current RqJC TCPAK57
(Notes 1, 3) Steady TC = 100°C 273 CASE 760AG
Power Dissipation State TC = 25°C PD 375 W
RqJC (Note 1)
TC = 100°C 187
MARKING DIAGRAM
Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 900 A
Operating Junction and Storage Temperature TJ, Tstg −55 to °C
Range +175

Source Current (Body Diode) IS 312 A

Single Pulse Drain−to−Source Avalanche EAS 739 mJ
Energy (IL(pk) = 19 A)

Lead Temperature for Soldering Purposes TL 260 °C

(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be XXXX = Specific Device Code
assumed, damage may occur and reliability may be affected. A = Assembly Location
Y = Year
THERMAL RESISTANCE MAXIMUM RATINGS W = Work Week
Parameter Symbol Value Unit ZZ = Assembly Lot

Junction−to−Case − Steady State RqJC 0.4 °C/W

Junction−to−Ambient − Steady State (Note 2) RqJA 29.2 ORDERING INFORMATION
Junction−to−Heatsink Top (Note 2) YJH 1.67 See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Junction−to−Drain Lead YJL 5.4
Junction−to−Source Lead YJL 5.3
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. 2s2p JEDEC51−7 standard PCB mounted to a 25x25x3 (mm) aluminum
heatsink with a 12 w/mK TIM interface.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.

© Semiconductor Components Industries, LLC, 2021 1 Publication Order Number:

September, 2022 − Rev. 3 NVMJST1D3N04C/D
 NVMJST1D3N04C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 V
Drain−to−Source Breakdown Voltage V(BR)DSS/ 9.6 mV/°C
Temperature Coefficient TJ
Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C 10 mA
VDS = 40 V
TJ = 125°C 100
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 170 mA 2.5 3.5 V
Threshold Temperature Coefficient VGS(TH)/TJ −8.6 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 50 A 1.2 1.39 mW
Forward Transconductance gFS VDS =15 V, ID = 50 A 145 S
CHARGES AND CAPACITANCES
Input Capacitance CISS 4300 pF
Output Capacitance COSS VGS = 0 V, f = 1 MHz, VDS = 25 V 2100
Reverse Transfer Capacitance CRSS 59
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 20 V; ID = 50 A 65 nC
Threshold Gate Charge QG(TH) 13
Gate−to−Source Charge QGS 20
VGS = 10 V, VDS = 20 V; ID = 50 A
Gate−to−Drain Charge QGD 12
Plateau Voltage VGP 4.7 V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time td(ON) 15 ns
Rise Time tr VGS = 10 V, VDS = 20 V, 47
Turn−Off Delay Time td(OFF) ID = 50 A, RG = 2.5 W 36
Fall Time tf 9.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C 0.82 1.2 V
IS = 50 A TJ = 125°C 0.68
Reverse Recovery Time tRR 63 ns
Charge Time ta VGS = 0 V, dIS/dt = 100 A/ms, 34
Discharge Time tb IS = 50 A 29
Reverse Recovery Charge QRR 92 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.

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 NVMJST1D3N04C

TYPICAL CHARACTERISTICS

300 300
280 10 V to VDS = 10 V
260 6.0 V
5.2 V 250
240
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

220
200 200
180
160
150
140 4.8 V
120 TJ = 25°C
100 100
80
60 4.4 V
50
40 4.0 V TJ = 125°C
20 TJ = −55°C
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3 4 5 6
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)

5 4
TJ = 25°C TJ = 25°C
ID = 50 A
4
3

3
2
2
VGS = 10 V

1
1

0 0
4 5 6 7 8 9 10 10 30 50 70 90 110 130 150 170 190
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Gate Voltage
1.8 1.E−03
VGS = 10 V
RDS(on), NORMALIZED DRAIN−TO−

ID = 50 A
1.6
SOURCE RESISTANCE

1.E−04 TJ = 150°C
IDSS, LEAKAGE (A)

1.4

1.2 1.E−05

1.0 TJ = 125°C
1.E−06
0.8
TJ = 85°C

0.6 1.E−07
−50 −25 0 25 50 75 100 125 150 175 5 10 15 20 25 30 35 40
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature vs. Voltage

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 NVMJST1D3N04C

TYPICAL CHARACTERISTICS

10000 10

VGS, GATE−TO−SOURCE VOLTAGE (V)

CISS QT
9
8
COSS
C, CAPACITANCE (pF)

7
1000
6 QGS QGD
CRSS 5
4
100
3
VGS = 0 V 2 VDS = 20 V
TJ = 25°C ID = 50 A
1
f = 1 MHz TJ = 25°C
10 0
0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000 100
VGS = 0 V
IS, SOURCE CURRENT (A)

100
t, TIME (ns)

tr
td(off) 10
td(on)

10

tf VGS = 10 V TJ = 150°C
VDD = 20 V
ID = 50 A TJ = 125°C TJ = 25°C TJ = −55°C
1.0 1.0
1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1000 100
ID, DRAIN CURRENT (A)

100
TJ = 25°C
IPEAK, (A)

10 ms
10 10 TJ = 100°C
TC = 25°C 0.5 ms
VGS ≤ 10 V 1 ms
1 Single Pulse 10 ms
RDS(on) Limit
Thermal Limit
Package Limit
0.1 1
0.1 1 10 100 1000 1E−4 1E−3 10E−2
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche

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 NVMJST1D3N04C

TYPICAL CHARACTERISTICS

1
ZqJC , TRANSIENT THERMAL

50% Duty Cycle

IMPEDANCE (°C/W)

0.1 20%
10%
5%
2%
1%
0.01

Single Pulse

0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100
PULSE TIME (sec)
Figure 13. Thermal Characteristics

DEVICE ORDERING INFORMATION

Device Marking Package Shipping†
NVMJST1D3N04CTXG 1D34C TCPAK57 Top Cool 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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 NVMJST1D3N04C

PACKAGE DIMENSIONS

LFPAK10 7.5x5
CASE 760AG
ISSUE C

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 NVMJST1D3N04C

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