HA13155

33 W × 4-Channel BTL Power IC

ADE-207-187A (Z)
2nd Edition
Jul. 1999

Description

The HA13155 is four-channel BTL amplifier IC designed for car audio, featuring high output and low
distortion, and applicable to digital audio equipment. It provides 33 W output per channel, with a 13.7 V
power supply and at Max distortion.

Functions

• 4 ch BTL power amplifiers

• Built-in standby circuit
• Built-in muting circuit
• Built-in protection circuit (surge, T.S.D, and ASO)

Features

• Requires few external parts

• Popping noise minimized
• Low output noise
• Built-in high reliability protection circuit
• Pin to pin with HA13150A/HA13151/HA13152/HA13153
HA13155
Block Diagram

C11
0.1 µ/16 V
VCC
C9 13.2 V
4400 µ/16 V
14 18 6

IN VCC PVCC2 PVCC1

2 STBY 3
R1
IN-1 2.2
1 Buffer & Mute-1 Amp-1 4 C1
0.1 µ

5
R2 C2
2.2 0.1 µ
7
IN-2 R3
2.2
11 Buffer & Mute-2 Amp-2 8 C3
0.1 µ

9
R4 C4
2.2 0.1 µ
15
IN-3 R5
2.2
13 Buffer & Mute-3 Amp-3 16 C5
0.1 µ

17
R6 C6
2.2 0.1 µ
19
R7
IN-4 2.2
23 Buffer & Mute-4 Amp-4 20 C7
0.1 µ

MUTE Protector 21
10 (ASO, Surge, TSD)
R8 C8
R9 2.2 0.1 µ
7.5 k 12 22 TAB
C10
10 µ/10 V Unit R: Ω
C: F
C1 to C8 should be polyester film capacitors with no secondary resonance (non-inductive),
to assure stable operation.
5V
Notes: 1. Standby 2
Power is turned on when a signal of 37.5 k Q1 ON
↓
3.5 V or 0.05 mA is impressed at pin 2. 23.5 k BIAS ON
When pin 2 is open or connected to
GND, standby is turned on (output off).
2. Muting 5V
Muting is turned off (output on) when 10
a signal of 3.5 V or 0.2 mA is impressed Q2 ON
at pin 10. ↓
25 k MUTE ON
When pin 10 is open or connected to
GND, muting is turned on (output off).
3. TAB (header of IC) connected to GND.

2
 HA13155
Absolute Maximum Ratings
Item Symbol Rating Unit
Operating supply voltage VCC 18 V
1
Supply voltage when no signal* VCC (DC) 26 V
2
Peak supply voltage* VCC (PEAK) 50 V
3
Output current* I O (PEAK) 4 A
4
Power dissipation* PT 83 W
Junction temperature Tj 150 °C
Operating temperature Topr –30 to +85 °C
Storage temperature Tstg –55 to +125 °C
Notes: 1. Tolerance within 30 seconds.
2. Tolerance in surge pulse waveform.
3. Value per 1 channel.
4. Value when attached on the infinite heat sink plate at Ta = 25 °C.
The derating carve is as shown in the graph below.

100

A: When heat sink is infinite (θj-a = 1.5°C/W)

83 W
B: When θf (thermal resistance of heat sink) = 3°C/W
(θj-a = 4.5°C/W)
Power dissipation PT (W)

50

28 W
B

0 25 50 85 100 150

Ambient temperature Ta (°C)

3
HA13155

Electrical Characteristics (VCC = 13.2 V, f = 1 kHz, RL = 4 Ω, Rg = 600 Ω, Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions
Quiescent current I Q1 — 300 — mA Vin = 0
Output offset voltage ∆VQ –250 0 +250 mV
Gain GV 30.5 32 33.5 dB
Gain difference between ∆GV –1.0 0 +1.0 dB
channels
Rated output power Po — 19 — W VCC = 13.2 V
THD = 10%, RL = 4 Ω
Max output power Pomax — 33 — W VCC = 13.7 V, RL = 4 Ω
Total harmonic distortion T.H.D. — 0.02 — % Po = 3 W
Output noise voltage WBN — 0.15 — mVrms Rg = 0 Ω
BW = 20 to 20 kHz
Ripple rejection SVR — 55 — dB Rg = 600 Ω, f = 120 Hz
Channel cross talk C.T. — 70 — dB Rg = 600 Ω
Vout = 0 dBm
Input impedance Rin — 25 — kΩ
Standby current I Q2 — — 10 µA
Standby control voltage VSTH 3.5 — VCC V
(high)
Standby control voltage VSTL 0 — 1.5 V
(low)
Muting control voltage VMH 3.5 — VCC V
(high)
Muting control voltage VML 0 — 1.5 V
(low)
Muting attenuation ATTM — 70 — dB Vout = 0 dBm

4
 HA13155

Characteristics Curve

Quiescent current vs. Supply Voltage

400
Quiescent current IQ (mA)

300

200

100

0
0 8 10 12 14 16 18 20

Supply Voltage VCC (V)

Output Power vs. Supply Voltage

70
RL = 4 Ω, f = 1 kHz
60
Output Power Po, Pomax (W)

50
ax
m
Po

40

30 0 %)
=1
D
(TH
20 Po

10

0
0 8 10 12 14 16 18 20

Supply Voltage VCC (V)

5
HA13155

Total Harmonic Distortion vs. Frequency

5
VCC = 13.2 V, RL = 4 Ω

Total Harmonic Distortion THD (%)

2

0.5

0.2

0.1

0.05
Po = 8.0 W (Ch1–Ch4)
0.02
Po = 1.5 W (Ch1–Ch4)
0.01
20 50 100 200 500 1k 2k 5k 10k 20k

Frequency f (Hz)

Total Harmonic Distortion vs. Output Power

5
VCC = 13.2 V, RL = 4 Ω, f = 1 kHz
Total Harmonic Distortion THD (%)

0.5
10 kHz (Ch1–C
h4)
0.2

0.1
1 kHz
(Ch1–
0.05 Ch4)
100
Hz
0.02 (Ch
1–C
h4)
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20

Output Power Po (W)

6
 HA13155

Crosstalk vs. Frequency (1)

80
Input Ch1, VCC = 13.2 V, Vout = 0 dBm
70

60
Crosstalk CT (dB)
Ch2
50 Ch3
Ch4
40

30

20

10

0
20 50 100 200 500 1k 2k 5k 10k 20k

Frequency f (Hz)

Crosstalk vs. Frequency (2)

80
Input Ch2, VCC = 13.2 V, Vout = 0 dBm
70

60
Crosstalk CT (dB)

Ch1
50 Ch3
Ch4
40

30

20

10

0
20 50 100 200 500 1k 2k 5k 10k 20k

Frequency f (Hz)

7
HA13155

Crosstalk vs. Frequency (3)

80
Input Ch3, VCC = 13.2 V, Vout = 0 dBm
70

60
Crosstalk CT (dB)
Ch1
50 Ch2
Ch4
40

30

20

10

0
20 50 100 200 500 1k 2k 5k 10k 20k

Frequency f (Hz)

Crosstalk vs. Frequency (4)

80
Input Ch4, VCC = 13.2 V, Vout = 0 dBm
70

60
Crosstalk CT (dB)

Ch1
50 Ch2
Ch3
40

30

20

10

0
20 50 100 200 500 1k 2k 5k 10k 20k

Frequency f (Hz)

8
 HA13155

Supply Voltage Rejection Ratio vs. Frequency

80
VCC = 13.2 V, RL = 4 Ω, Vripple = 0 dBm, Rg = 620 Ω

Supply Voltage Rejection Ratio SVR (dB)

70

60

50
Ch1
40 Ch2
Ch3
Ch4
30

20

10

0
20 50 100 200 500 1k 2k 5k 10k 20k 50k

Frequency f (Hz)

Wide Band Noise vs. Signal Source Resistance

5
VCC = 13.2 V, RL = 4 Ω, Vik = 0
2
Wide Band Noise WBN (mV)

0.5

0.2 Mute OFF Ch1–Ch4

0.1
Mute ON Ch1–Ch4
0.05

0.02

0.01
20 50 100 200 500 1k 2k 5k 10k 20k 50k

Signal Source Resistance Rg (Ω)

9
HA13155

Power Dissipation vs. Output Power

50
RL = 4 Ω, f = 1 kHz, 1ch operation
20
4)
(Ch 1–Ch
Power Dissipation PT (W) 16 V
10 V CC =
Ch4)
V (Ch1–
5
V CC = 13.2

0.5

0.2

0.1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20

Output Power Po (W)

Power Dissipation vs. Frequency

15
VCC = 13.2 V, RL = 4 Ω, Po = 10 W, 1ch operation

Ch1–Ch4
Power Dissipation PT (W)

10

0
20 50 100 200 500 1k 2k 5k 10k 20k

Frequency f (Hz)

10
 HA13155

Gain vs. Frequency

40
VCC = 13.2 V, RL = 4 Ω, VOUT = 0 dBm
35
Ch1–Ch4
Gain GV (dB) 30

25

20

15

10

0
20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k200k 500k 1M

Frequency f (Hz)

11
HA13155

Package Dimensions

Unit: mm

30.18 ± 0.25
φ 3.80 ± 0.05 4.50 ± 0.12
19.81
1.55 +– 0.1
0.05

2.79
4.32 ± 0.05

2 – R1.84 ± 0.19
17.50 ± 0.13
3.80 ± 0.05

10.70 ± 0.12

17.78 ± 0.25
1 23
0.40 +– 0.04
0.06

4.14 ± 0.33
0.70 +0.09
–0.1 1.27
1.12 0.25 M 5.08 4.29
27.94

Hitachi Code SP-23TE

JEDEC Conforms
EIAJ —
Weight (reference value) 8.5 g

12
 HA13155

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL NorthAmerica : http:semiconductor.hitachi.com/
Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor Hitachi Europe GmbH Hitachi Asia Pte. Ltd. Hitachi Asia (Hong Kong) Ltd.
(America) Inc. Electronic components Group 16 Collyer Quay #20-00 Group III (Electronic Components)
179 East Tasman Drive, Dornacher Straβe 3 Hitachi Tower 7/F., North Tower, World Finance Centre,
San Jose,CA 95134 D-85622 Feldkirchen, Munich Singapore 049318 Harbour City, Canton Road, Tsim Sha Tsui,
Tel: <1> (408) 433-1990 Germany Tel: 535-2100 Kowloon, Hong Kong
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0 Fax: 535-1533 Tel: <852> (2) 735 9218
Fax: <49> (89) 9 29 30 00 Fax: <852> (2) 730 0281
Hitachi Europe Ltd. Hitachi Asia Ltd. Telex: 40815 HITEC HX
Electronic Components Group. Taipei Branch Office
Whitebrook Park 3F, Hung Kuo Building. No.167,
Lower Cookham Road Tun-Hwa North Road, Taipei (105)
Maidenhead Tel: <886> (2) 2718-3666
Berkshire SL6 8YA, United Kingdom Fax: <886> (2) 2718-8180
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.

13