APT77N60BC6

APT77N60SC6
600V 77A 0.041Ω

COOLMOS
Power Semiconductors Super Junction MOSFET
TO
• Ultra Low RDS(ON) -2
47

• Low Miller Capacitance D3PAK

• Ultra Low Gate Charge, Qg

• Avalanche Energy Rated

• Extreme dv/dt Rated

D
• Popular TO-247 or Surface Mount D3 package.

MAXIMUM RATINGS All Ratings per die: TC = 25°C unless otherwise specified.
Symbol Parameter APT77N60B_SC6 UNIT

VDSS Drain-Source Voltage 600 Volts

Continuous Drain Current @ TC = 25°C 77

ID
Continuous Drain Current @ TC = 100°C 49 Amps
1 272
IDM Pulsed Drain Current

VGS Gate-Source Voltage Continuous ±20 Volts

PD Total Power Dissipation @ TC = 25°C 481 Watts

TJ,TSTG Operating and Storage Junction Temperature Range - 55 to 150

°C
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
2 13.4 Amps
IAR Avalanche Current
2 2.96
EAR Repetitive Avalanche Energy ( Id =13.4A, Vdd = 50V )
mJ
EAS Single Pulse Avalanche Energy ( Id = 13.4A, Vdd = 50V ) 1954

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) 600 Volts

3 .037 .041 Ohms
RDS(on) Drain-Source On-State Resistance (VGS = 10V, ID = 44.4A)

Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TC = 25°C) 25
IDSS μA
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TC = 150°C) 250

IGSS Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) ±100 nA

050-7210 Rev A 8-2010

VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.96mA) 2.5 3 3.6 Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG."
Microsemi Website - http://www.microsemi.com
 DYNAMIC CHARACTERISTICS APT77N60B_SC6
Symbol Characteristic Test Conditions MIN TYP MAX UNIT
Ciss Input Capacitance 13600
VGS = 0V
Coss Output Capacitance VDS = 25V 4400 pF
Crss Reverse Transfer Capacitance f = 1 MHz 290
Qg Total Gate Charge 4
260
VGS = 10V
Qgs Gate-Source Charge VDD = 400V 38 nC
Qgd ID = 77A @ 25°C
Gate-Drain ("Miller ") Charge 144
td(on) Turn-on Delay Time INDUCTIVE SWITCHING 18
tr Rise Time VGS = 10V 27
VDD = 380V ns
td(off) Turn-off Delay Time ID = 77A @ 25°C 110 165
tf Fall Time RG = 5.0Ω 8 12
Eon Turn-on Switching Energy 5 INDUCTIVE SWITCHING @ 25°C 1670
VDD = 400V, VGS = 15V
Eoff Turn-off Switching Energy ID = 77A, RG = 5Ω 2880
μJ
Eon Turn-on Switching Energy 5
INDUCTIVE SWITCHING @ 125°C 2300
VDD = 400V, VGS = 15V
Eoff Turn-off Switching Energy 3100
ID = 77A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions MIN TYP MAX UNIT
IS Continuous Source Current (Body Diode) 77
Amps
ISM Pulsed Source Current 1
(Body Diode) 231
VSD Diode Forward Voltage 3 (VGS = 0V, IS = -77A) 1 1.2 Volts
dv
/dt Peak Diode Recovery /dt dv 6
15 V/ns
Reverse Recovery Time
t rr Tj = 25°C 950 ns
(IS = -77A, di/dt = 100A/μs)
Reverse Recovery Charge
Q rr Tj = 25°C 32 μC
(IS = -77A, di/dt = 100A/μs)
Peak Recovery Current
IRRM Tj = 25°C 60 Amps
(IS = -77A, di/dt = 100A/μs)

THERMAL CHARACTERISTICS
Symbol Characteristic MIN TYP MAX UNIT
RθJC Junction to Case 0.26 °C/W
RθJA Junction to Ambient 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 4 See MIL-STD-750 Method 3471
2 Repetitive avalanche causes additional power losses that can be calculated as 5 Eon includes diode reverse recovery.
PAV = EAR*f . Pulse width tp limited by Tj max. 6 Maximum 125°C diode commutation speed = di/dt 600A/μs
3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
Microsemi reserves the right to change, without notice, the specifications and information contained herein.

0.30
ZθJC, THERMAL IMPEDANCE (°C/W)

0.25 D = 0.9

0.20 0.7

0.15 0.5 Note:

050-7210 Rev A 8-2010

PDM

t1
0.10
0.3
t2

0.05 Duty Factor D = 1/t2

t
0.1
Peak TJ = PDM x ZθJC + TC
0.05 SINGLE PULSE
0
10 -5 10 -4
10-3 10-2 0.1 1

RECTANGULAR PULSE DURATION (SECONDS)

Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Typical Performance Curves APT77N60B_SC6
250 25
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
15V 10V @ <0.5 % DUTY CYCLE
200 00

ID, DRAIN CURRENT (A)

IC, DRAIN CURRENT (A)
7.5V
150 75
7.0V

6.5V
100 50
6.0V

5.5V
50 25
5V TJ= 25°C
TJ= 125°C TJ= -55°C
0 0
0 5 10 15 20 25 30 0 2 4 6 8
VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 2, Low Voltage Output Characteristics FIGURE 3, Transfer Characteristics
1.80 80
RDS(on), DRAIN-TO-SOURCE ON RESISTANCE

NORMALIZED TO

V = 10V @ 38.5A
GS 70
1.60

ID, DRAIN CURRENT (A)

60

50
1.40
VGS = 10V 40

1.20 30

VGS = 20V 20
1.00
10

0.80 0
0 40 80 120 160 200 25
50 75 100 125 150
ID, DRAIN CURRENT (A) TC, CASE TEMPERATURE (C°)
FIGURE 4, RDS(ON) vs Drain Current FIGURE 5, Maximum Drain Current vs Case Temperature
1.20 3.00
BVDSS, DRAIN-TO-SOURCE BREAKDOWN

RDS(ON), DRAIN-TO-SOURCE ON
RESISTANCE (NORMALIZED)

1.15 2.50
VOLTAGE (NORMALIZED)

1.10 2.00

1.05 1.50

1.00 1.00

0.95 0.50

0.90 0
-50 0 50 100 150 -50 0 50 100 150
TJ, Junction Temperature (°C) TJ, JUNCTION TEMPERATURE (C°)
FIGURE 6, Breakdown Voltage vs Temperature FIGURE 7, On-Resistance vs Temperature

1.20 800
VGS(TH), THRESHOLD VOLTAGE

1.10
100
ID, DRAIN CURRENT (A)

1.00
(NORMALIZED)

0.90 10
10ms 100µs
1ms
050-7210 Rev A 8-2010

0.80
100ms
1
0.70

0.60 0.1
- 50 0 50 100 150 1 10 100 800
TC, Case Temperature (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 8, Threshold Voltage vs Temperature FIGURE 9, Maximum Safe Operating Area
 Typical Performance Curves APT77N60B_SC6
12,000 14

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

I = 77A
D
Ciss
10,000 12
VDS= 120V
10
Coss
C, CAPACITANCE (pF)

1000 VDS= 300V

8
VDS= 480V

100 6

Crss 4
10
2

0 0
0 10 20 30 40 50 0 50 100 150 200 250 300 350
VDS, DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
FIGURE 10, Capacitance vs Drain-To-Source Voltage FIGURE 11, Gate Charges vs Gate-To-Source Voltage
350 400
IDR, REVERSE DRAIN CURRENT (A)

350
td(off)
100
TJ= +150°C 300

td(on) and td(off) (ns)

250
V = 400V
DD
TJ = =25°C R = 5.0 Ω
200 G
T = 125°C
J
10 L = 100μH
150

100

50 td(on)

1 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 25 50 75 100 125
VSD, SOURCE-TO-DRAIN VOLTAGE (V) ID (A)
FIGURE 12, Source-Drain Diode Forward Voltage FIGURE 13, Delay Times vs Current
00 6000
V = 400V V = 400V
DD DD
R = 5.0Ω R = 5.0 Ω
G G
T = 125°C tr 5000 T = 125°C
SWITCHING ENERGY (μJ)

J
L = 100μH
J Eon
50 L = 100μH
EON includes Eoff
4000 diode reverse recovery.
tr, and tf (ns)

00 3000
tf

2000
50
1000

0 0
0 25 5075 100 125
10 30 70 50
90 110 130
ID (A) ID (A)
FIGURE 14 , Rise and Fall Times vs Current FIGURE 15, Switching Energy vs Current

7000
V = 400V
DD
I = 77A
D
Eoff
6000
T = 125°C
J
SWITCHING ENERGY (uJ)

L = 100μH
5000 EON includes
diode reverse recovery. Eon
4000

3000
050-7210 Rev A 8-2010

2000

1000

0
0 10 20 30 40 50
RG, GATE RESISTANCE (Ohms)
FIGURE 16, Switching Energy vs Gate Resistance
 APT77N60B_SC6

10% Gate Voltage

90%
Gate Voltage
td(on) TJ = 125°C TJ = 125°C
td(off)
tr
tf
90%
Collector Current Collector Current

5% 10% 10%
5%
Collector Voltage 0
Collector Voltage

Switching Energy Switching Energy

Figure 17, Turn-on Switching Waveforms and Definitions Figure 18, Turn-off Switching Waveforms and Definitions

APT30DQ60
APT30DF60

V DD IC V CE

D.U.T.

Figure 19,20,
Figure Inductive Switching
Inductive Test
Switching Circuit
Test Circuit

3
TO-247 Package Outline D PAK Package Outline
e3 100% Sn

4.69 (.185) 4.98 (.196) 15.95 (.628) 13.41 (.528)

(Heat Sink)

5.31 (.209) 15.49 (.610) 5.08 (.200) 16.05(.632) 13.51(.532)

1.49 (.059) 16.26 (.640) 1.47 (.058) 1.04 (.041)
2.49 (.098) 1.57 (.062) 1.15(.045)
Drain

5.38 (.212)
6.15 (.242) BSC 6.20 (.244)
Revised 11.51 (.453)
13.79 (.543)
Drain

20.80 (.819) Revised 8/29/97 11.61 (.457)

21.46 (.845) 4/18/95 13.99(.551)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022) {3 Plcs}
1.27 (.050)
0.020 (.001) 1.40 (.055)
4.50 (.177) Max. 2.87 (.113) 0.178 (.007) 3.81 (.150)
3.12 (.123) 1.98 (.078) 4.06 (.160)
2.67 (.105) 2.08 (.082) (Base of Lead)
0.40 (.016) 1.65 (.065) 2.84 (.112) 1.22 (.048)
0.79 (.031) 19.81 (.780) 2.13 (.084) 1.32 (.052) Heat Sink (Drain)
050-7210 Rev A 8-2010

20.32 (.800)
1.01 (.040) Gate 5.45 (.215) BSC and Leads
1.40 (.055) {2 Plcs.} are Plated
Drain
Source
Source
2.21 (.087)
2.59 (.102) 5.45 (.215) BSC Drain
2-Plcs. Gate
Dimensions in Millimeters and (Inches) Dimensions in Millimeters (Inches)