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 Editor
Acharyya

Foundations and Frontiers

This book contains all the research papers accepted for oral presentation at the 3rd

Communication and Electrical Engineering

Foundations and Frontiers in Computer,
International Conference on “Foundations and Frontiers in Computer, Communication
and Electrical Engineering – 2016 (C2E2 – 2016)”. The conference was held on the 15th
and 16th of January 2016, at the Supreme Knowledge Foundation Group of Institutions,
Mankundu, Hooghly, India, in order to celebrate the 100 year anniversary of a historical
moment: the first transcontinental telephone call between Alexander Graham Bell in
in Computer, Communication
New York and his assistant Thomas Watson in San Francisco, occurred on 25th January
1915. The scope of the conference includes all the key areas of Electrical Engineering, and Electrical Engineering
Electronics & Communication Engineering and Computer Engineering disciplines.
More than 150 research papers from authors of all around the world were submitted
for presentation during the conference. After double blind peer review of those
submitted papers by the experts of respective areas, a total 107 papers were accepted Editor: Aritra Acharyya
for presentation during the conference. All those accepted papers have been included
in this Proceedings of C2E2 – 2016.

an informa business
 FOUNDATIONS AND FRONTIERS IN COMPUTER, COMMUNICATION
AND ELECTRICAL ENGINEERING

LAHIRI_FM_CS3.indd i 3/15/2016 3:31:16 PM

This page intentionally left blank
 PROCEEDINGS OF THE 3RD INTERNATIONAL CONFERENCE ON FOUNDATIONS AND
FRONTIERS IN COMPUTER, COMMUNICATION AND ELECTRICAL ENGINEERING (C2E2 – 2016),
MANKUNDU, WEST BENGAL, INDIA, 15–16 JANUARY 2016

Foundations and Frontiers in

Computer, Communication and
Electrical Engineering

Editor
Aritra Acharyya
Department of Electronics and Communication,
Supreme Knowledge Foundation Group of Institutions (SKFGI),
Mankundu, West Bengal, India

LAHIRI_FM_CS3.indd iii 3/15/2016 3:31:16 PM

 CRC Press/Balkema is an imprint of the Taylor & Francis Group, an informa business

© 2016 Taylor & Francis Group, London, UK

Typeset by V Publishing Solutions Pvt Ltd., Chennai, India

All rights reserved. No part of this publication or the information contained herein may be reproduced,
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Although all care is taken to ensure integrity and the quality of this publication and the information
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Published by: CRC Press/Balkema

P.O. Box 11320, 2301 EH Leiden, The Netherlands
e-mail: Pub.NL@taylorandfrancis.com
www.crcpress.com – www.taylorandfrancis.com

ISBN: 978-1-138-02877-7 (Hbk)

ISBN: 978-1-315-65791-2 (eBook PDF)

LAHIRI_FM_CS3.indd iv 3/15/2016 3:31:16 PM

 Frontiers in Computer, Communication and Electrical Engineering – Acharyya (Ed.)
© 2016 Taylor & Francis Group, London, ISBN: 978-1-138-02877-7

Table of contents

Preface xi
Advisory committees xiii
Organizing committees xv

A microscopic view on the effect of anisotropy in the breakdown phenomenon

of the 4H-SiC power diodes 1
S. Chatterjee, A. Das, A. Singh, T.G. Biswas & A. Acharyya
Wireless power transmission—part I: A brief history 5
N. Patra, D. Banerjee, S. Chatterjee, T.K. Sengupta, S. Chakraborty & A. Acharyya
Wireless power transmission—part II: Theoretical modeling of transmitting
and receiving electrically-small loop antennas 9
N. Patra, D. Banerjee, S. Chatterjee, T.K. Sengupta, S. Chakraborty & A. Acharyya
Wireless power transmission—part III: Experimental study 13
N. Patra, D. Banerjee, S. Chatterjee, T.K. Sengupta, S. Chakraborty & A. Acharyya
Evaluation of ionization rates of charge carriers in a semiconductor via a generalized
analytical model based on multistage scattering phenomena—part I: Wurtzite-GaN 17
A. Banerjee, S. Chatterjee, A. Das, S. Chakraborty & A. Acharyya
Evaluation of ionization rates of charge carriers in a semiconductor via a generalized
analytical model based on multistage scattering phenomena—part II: Type-IIb
diamond and 6H-SiC 21
A. Banerjee, A. Das, S. Chatterjee, S. Chakraborty & A. Acharyya
Design and development of smart traffic lighting 25
S. Roy, P. Rakshit, S. Nandy, P. Chakraborty, S. Mukhopadhyay & V. Gupta
Influence of band-to-band tunneling induced shift of ATT phase delay on millimeter-wave
properties of DDR IMPATTs—part I: Theoretical modeling 29
P. Banerjee, P.K. Bandyopadhyay, S. Chakraborty & A. Acharyya
Influence of band-to-band tunneling induced shift of ATT phase delay on millimeter-wave
properties of DDR IMPATTs—part II: Simulation results 35
P. Banerjee, P.K. Bandyopadhyay, S. Chakraborty & A. Acharyya
Influence of band-to-band tunneling induced shift of ATT phase delay on millimeter-wave
properties of DDR IMPATTs—part III: Calculation of shift of ATT phase delay
due to tunneling 39
P. Banerjee, P.K. Bandyopadhyay, S. Chakraborty & A. Acharyya
Effect of gate voltage and structural parameters on the Subthreshold Swing and the DIBL
of Si-SiO2 GAA quantum wire transistor 43
A. Deyasi & N.R. Das
50 Hz cascaded twin-tee notch filter for removal of power line interference from human
electrocardiogram—part I: Circuit design 49
S. Chakraborty, S. Roy, S. Chatterjee, A. Das, M. Ghosh & A. Acharyya

LAHIRI_FM_CS3.indd v 3/28/2016 3:01:57 PM

 Research on the 50 Hz cascaded twin-tee notch filter for the removal of power line
interference from human electrocardiogram—part II: Simulation study 53
S. Chakraborty, S. Roy, S. Chatterjee, A. Das, M. Ghosh & A. Acharyya
Digital Phase Lock Loop based on Discrete Energy Separation Algorithm 57
S. Sarkar, B.N. Biswas & U. Maulik
Vibrational signal analysis for bearing fault detection in mechanical systems 63
N. Boro, H. Das, A. Ghosh & G. Roy
Differential Biogeography Based Optimization applied to Load Frequency Control problem 69
D. Guha, P.K. Roy & S. Banerjee
Wide beam microstrip patches with grounded E-shaped edges to improve the polarization purity 75
S. Chakraborty, R. Poddar, S. Chattopadhyay & R. Guha
Smooth sliding mode control of a nonlinear CSTR using an inverse hyperbolic
function-based law 79
A. Sinha & R.K. Mishra
A unified FDTD approach in electromagnetics metamaterials 83
B. Mandal, S.K. Singh, A. Biswas, A. Acharyya, A. Ghosal,
A.K. Bhattacherjee & D.P. Chakraborty
Development of a low-cost field detector unit for safety of operating personnel
in low tension line 87
T.S. Biswas, A. Baug, R. Ghosh, B. Chatterjee & S. Dalai
Congestion control in Cognitive Radio networks using fractional order rate reaching
law based sliding modes 91
T. Majumder, R.K. Mishra, S.S. Singh, A. Sinha & P.K. Sahu
The dynamic compensation of the reactive power for the integration of wind power
in a weak distribution network 95
R. Misra
The Oppositional Chemical Reaction Optimization algorithm for the optimal tuning
of the Power System Stabilizer 101
S. Paul, A. Maji & P.K. Roy
Neural network based multi objective optimization—a new algorithm 107
D. Roy
Available Transfer Capacity evaluation through BBO and GWO algorithms 111
K. Majumdar, P.K. Roy & S. Banerjee
Optimal location of capacitor in radial distribution network using Chemical Reaction
Optimization algorithm 119
S. Sultana, S. Roy & P.K. Roy
Application of Improved Particle Swarm Optimization technique for thinning
of Elliptical Array antenna 125
R. Bera, D. Mandal, S.P. Ghoshal & R. Kar
Linear phase FIR bandstop filter design using Colliding Bodies Optimization technique 131
S.K. Saha
An intelligent controller for the enhancement of voltage stability and power oscillation
damping of an isolated micro grid 139
A. Mohanty, M. Viswavandya & S. Pragyan
Identification of lyapunov function for testing stability of nonlinear systems using BFO 143
C.M. Banerjee & A. Baral
Development of a cross correlation based induction motor stator winding
inter-turn fault severity indicator 149
P. Mishra & S. Das

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 Webpage prediction using latest substring association rule mining 157
R.P. Chatterjee, M. Ghosh, M.K. Das & R. Bag
Development of a compact, portable setup for demonstration of corona phenomenon 161
S. Mukherjee, R. Ghosh, B. Chatterjee & S. Dalai
Design of the bipolar, floating HVDC source for the insulation diagnostics 165
A. Kumar, N. Haque, R. Ghosh, B. Chatterjee & S. Dalai
Minimization of return loss using minimum steps coaxial coupler for ka-band helix TWT 169
R. Guha, N. Purushothaman & S.K. Ghosh
Human identification by gait using wavelet transform and the analysis of variance 173
M. Ghosh, S. Chatterjee & D. Bhattacharjee
A fiber optic sensor for the detection of Partial Discharge within the High Voltage power transformer 177
B. Sarkar, C. Koley, N.K. Roy & P. Kumbhakar
2D-thermal model for estimation of heat-dissipation in SiC based p-i-n switches used
for RF-communication 183
J. Kundu, A. Kundu, M.R. Kanjilal & M. Mukherjee
Load balancing in cloud computing using a local search technique—Tabu Search 187
B. Mondal, M. Das, C. Mukherjee & O. Das
High density salt and pepper noise removal by selective mean filter 191
A. Bandyopadhyay, K. Chakraborty, R. Bag & A. Das
Comparison of electric and thermal stress distribution in underground cable
for different insulating materials 195
S. Pal, V. Gupta & A. Lahiri
An improved approach of cloud service brokerage model in multi-cloud environment 201
B. Bhabani
A study to find the most suitable set of prominent genes from microarray data
for disease prediction 207
S. Dasgupta, G. Saha, R. Mondal, A. Chanda & R.K. Pal
Magnetic Field Tunable Avalanche Transit Time (MAGTATT) device 213
P. Banerjee, A. Acharyya, A. Biswas & A.K. Bhattacharjee
A deviation based identification of random valued impulse noise towards image filtering
using neighborhood approximation 217
S. Banerjee, A. Bandyopadhyay, R. Bag & A. Das
A variable gain CMOS phase shifter for phased array beamformer applications 221
D. Mitra, A. Sanyal, P. Roy & D. Dawn
Calculating absorption coefficient of Gaussian double quantum well structured with band
nonparabolicity for photodetector in microwave spectra 225
D. Sarkar & A. Deyasi
Application of STATCOM in power quality improvement under different fault conditions
in a power system network 231
N. Roy
Effects of close proximity and hybrid operation of HVAC & HVDC transmission lines
under steady-state and fault conditions: A literature survey 237
B. Datta, K. Gogoi & S. Chatterjee
Studies on frequency domain spectroscopy of transformer insulation considering
distributed relaxation process 245
S.K. Ojha, P. Purkait, A. Kumar, A. Sultan, I. Kumar, J.K. Singh & S. Satyam
Generation of air gap rotating magnetic field using switched dc supply for sensor-less
Brushless DC motor drive 253
U. Dey, A. Ganguly & S. Tola

vii

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 Dependence of photonic bandgap on material composition for two-dimensional photonic
crystal with triangular geometry 259
S. Mukherjee, A. Roy, A. Deyasi & S. Ghosal
Design and simulation of a power factor corrected boost converter 265
S. Tola, A. Ganguly, U. Dey, Megha, S. Mukherjee, A.K. Das, T. Dey, I. Mondal & S. Mondal
Smart shoes with cueing system and remote monitoring of Parkinson’s patients: SCARP 269
P. Das, R.N. Mitra & N. Suppakitjarak
A survey on cloud computing and networking in the next generation 275
P. Das & R.N. Mitra
Tilaiya reservoir catchment segmentation using hybrid soft cellular approach 281
K. Mahata, R. Das & A. Sarkar
MIMO channel capacity in non-uniform phase distributed Nakagami channel with ZF Receiver 289
S.N. Sur, S. Bera, R. Bera & B. Maji
Decision feedback equalization for large scale MIMO system 295
S.N. Sur, R. Bera & B. Maji
Comparative study of DR image De-noising method based on quality parameters 299
M. Chakraborty & M. Mondal
Energy efficient adaptive power control in indoor wireless sensor networks 305
D. Basu, G.S. Gupta, G. Moretti & X. Gui
The present energy scenario and need of microgrid in India 313
A. Singh & P. Basak
Influence of temperature on field emission from finite barrier quantum structures
in presence of image force 319
S.B. Sett & C. Bose
Tuning of fractional-order PID controller—a review 323
D. Shah, S. Chatterjee, K. Bharati & S. Chatterjee
Effect of void geometry on noise rejection in 1D photonic crystal with
metamaterial/air interface 331
B. Das & A. Deyasi
A second-order bandpass response with a wideband frequency selective surface 337
A. Chatterjee & S.K. Parui
An acrylic sheet based frequency selective surface for GSM 1800 MHz band shielding 341
P. Sasmal, A. Chatterjee & S.K. Parui
Design of efficient second harmonics injection based solar inverter for standalone application 345
S. Mondal & S. Chowdhuri
Proxima-Talk: A proposed framework for network assisted device-to-device communication 353
R.N. Mitra & D.P. Agrawal
Effect of slow decaying trapped charges on PDC data and associated diagnosis
of power transformer insulation 359
N. Verma & A. Baral
Priority based service scheduling in Enterprise Cloud Bus architecture 363
G. Khan, S. Sengupta & A. Sarkar
Real-time vehicle safety monitoring and recording system using microcontroller Atmega16
and ultrasonic sensor 369
S.S. Thakur & J.K. Sing
Innovative structures for stepped impedance resonator filters for wireless applications 375
A.K. Varshney, S.K. Varshney, R.K. Saw, S.K. Shaw & T. Biswas

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 Effect of variation of load demand on bus voltage magnitude in radial distribution
system 379
V. Gupta & M. Mukherjee
A hybrid distribution state estimation algorithm with regard to distributed generations 383
U. Sur & G. Sarkar
Electric stress control on post-type porcelain insulators using a coating of RTV Silicone
Rubber with BaTiO3 nanofillers 387
A.K. Pal, A. Baral & A. Lahiri
Mapping forest cover of Gautala Autramghat ecosystems using geospatial technology 391
Y. Rajendra, S. Thorat, A. Nagne, R. Dhumal, A. Vibhute, A. Varpe,
S.C. Mehrotra & K.V. Kale
Synthesis of linear array antenna of a large number of elements using Restricted Search
Particle Swarm Optimization 397
A. Ghosh, T. Das, S. Chatterjee & S. Chatterjee
Effect of a high-k dielectric material on the surface potential and the induced lateral
field in short-channel MOSFET 403
A. Ganguly, C. Ghosh & A. Deyasi
Effect of carrier-carrier collisions on RF performance of millimeter-wave
IMPATT sources 409
P.K. Bandyopadhyay, S. Chakraborty, A. Biswas,
A. Acharyya & A.K. Bhattacharjee
Removal of the baseline wander and the power line interference from ECG signals
using the Median–Kalman filter 415
K. Nandi & A. Lahiri
A practical approach for power system state estimation based on the hybrid Particle
Swarm Optimization algorithm 421
U. Sur & G. Sarkar
Design of the Leaky-Wave Antenna using the Composite Right/Left-Handed Transmission
Line metamaterial at the center frequency of 2.33GHz 427
S.K. Varshney, A.K. Varshney, A.M. Chowdhury, A. Ganguly & A. Samanta
An artificial neural network-based temperature measurement system using a thermistor
in astable multivibrator circuit 431
S.K. Sahu & K. Nandi
Valence Band Anticrossing model for InAs1-xBix by k·p method 437
D.P. Samajdar, T.D. Das & S. Dhar
Assessment of different transient conditions in a radial feeder by THD- and DWT-based
Skewness analysis 441
A. Maji, A. Chattopadhyaya, B. Das & S. Chattopadhyay
Study of dynamic responses of an interconnected power system using a zero-order
hold circuit 447
S. Mukherjee, S.K. Bandyopadhyay, A. Chattopadhyaya & B. Das
Nanorobot—the expected ever reliable future asset in diagnosis, treatment, and therapy 451
O. Biswas & A. Sen
Fabrication and resilience measurement of thin aluminium cantilevers using scanning
probe microscopy 457
A.K. Basu, H. Sarkar & S. Bhattacharya
Comparative analysis of AODV routing protocols based on network performance
parameters in Mobile Adhoc Networks 461
M. Rath, B.K. Pattanayak & B. Pati

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 Pseudo mesh schema based data warehouse architecture employing encryption request
algorithm and intelligent sensor algorithm for secured transmission
and performance enhancement 467
R. Chowdhury, P. Chatterjee, S. Datta & M. De
Simulation study on variation of attenuation and power handling capacity of micro-coaxial
line for different characteristic impedances 471
M.K. Sharma, A. Bhattacharya & R.R. Day
Design and development of a web-based teaching performance assessment tool
with student feedback and fuzzy logic 475
S. Banerjee, R. Bag & A. Das
A comparison of the performance analysis between the PWM- and SVPWM-Fed
induction motor drive 481
S.K. Bandyopadhyay, S. Mukherjee, A. Chattopadhyaya, S. Naha & R. Bhadra
A study on the switching life test of low-power-factor Compact Fluorescent Lamps 487
S. Naha, S.K. Bandyopadhyay, S. Mukherjee & S. Datta
Demonstration of edge detection technology using the coupling of the IR sensor and robotics 493
S. Mukherjee & S. Ghosh
Measurement and analysis of harmonics contribution by HID lamp systems 497
S. Datta, S.K. Bandyopadhyay & S. Mukherjee
Optimization of electrode-spacer geometry of a gas insulated system for minimization
of electric stress using SVM 501
S. Dasgupta, A. Lahiri & A. Baral
Study of electrical and thermal stress distribution using boron nitride with Silicon Rubber
in HV cable termination 507
M. Basu, V. Gupta, A. Lahiri & A. Baral
A hybrid compartmental epidemic model for predicting the Ebola outbreak 511
S. Roy & S.B. Chaudhury
Lighting design technique of the sports arena 517
A. Khanra, T. Halder & B. Das
Numerical experiment on a modified PLL with the Euler method. Part-1:
Locking boundary and stability 521
S. Roy, S. Ghosh, S. De, S. Guha Mallick & B.N. Biswas
Numerical experiment on a modified PLL with the Euler method. Part-2:
Demodulation criteria 525
S. De, S. Roy, S. Ghosh & B.N. Biswas
Design of band pass filter at 13.325 GHz 529
S. Guha Mallick, S. Das, S. Bhanja & T.K. Dey
Bose Einstein Condensation in lithium tantalate ferroelectrics 533
A. Biswas
Gain and bandwidth enhancement of a microstrip antenna by incorporating air gap 537
A. Biswas
A brief study of the ESPRIT Direction-Of-Arrival estimation algorithm in an uncorrelated
environment for application in the Smart Antenna System 541
D.K. Mondal, B. Dian, C. Dutta, A. Chatterjee & A. Ray
Photonic Integrated Circuit technology for ultra high speed wireless communications 547
G. Carpintero

Author index 551

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 Frontiers in Computer, Communication and Electrical Engineering – Acharyya (Ed.)
© 2016 Taylor & Francis Group, London, ISBN: 978-1-138-02877-7

Preface

The 3rd International Conference on “Foundations and Frontiers in Computer, Communication and
Electrical Engineering–2016” (C2E2–2016), hosted by Supreme Knowledge Foundation Group of
Institutions (SKFGI), India, in association with CSIR-CEERI, Pilani, Rajasthan, India, followed the
success of previous two International Conferences hosted by SKFGI in 2012 and 2015.
C2E2–2016 was a notable event which brings academia, researchers, engineers and students of
Electronics and Communication, Computer and Electrical Engineering together. The conference was
a perfect platform to share experience, foster collaborations across industry and academia, and evalu-
ate emerging technologies across the globe. The conference was technically sponsored by IEEE Kolkata
Section, IET Kolkata Network along with several IEEE chapters under Kolkata Section such as Electron
Devices Society, Power and Energy Society, Dielectrics and Electrical Insulation Society and Computer
Society. The conference was sponsored by CSIR-CEERI, Pilani, Rajasthan, Defence Research and
Development Organization (DRDO) and Indian National Science Academy (INSA).
C2E2–2016 celebrated the historical moment of the four-way call between Alexander Graham Bell in
New York, his assistant Thomas Watson in San Francisco, President Woodrow Wilson in Washington
and Theodore Vail, President of American Telephone and Telegraph company (AT&T) in Jekyll
Island, i.e. the first transcontinental phone call made on January 25, 1915. The theme of C2E2–2016
rejoiced a walk down telephone memory lane; a remarkable footstep of human being in the field of
electrical communication. Many scopes from the earlier International Conferences hosted by SKFGI
are still relevant today and therefore remain unchanged for the 3rd C2E2–2016; these include electron
devices, ion integrated circuits, interconnects, semiconductors, quantum-effect structures, microwave
and millimeter-wave vacuum devices, emerging materials with applications in bioelectronics, biomedical
electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators,
nano-electronics, optoelectronics, photovoltaics, power ICs, micro-sensors, digital and analog VLSI,
photonics, plasma devices, microwave/millimeter-wave components, devices, circuits and systems, anten-
nas, millimeter-wave and sub-millimeter-wave techniques, antenna signal processing and control, tubes,
missile tracking and guided systems, radio astronomy, propagation and radiation aspects of terrestrial
and space based communication, satellite and mobile communication systems, radar, high power micro-
wave systems (HPMS), optical communications, information processing science and technology, machine
learning and artificial intelligence, networking, image processing, soft computing, cloud computing, data
mining & data warehousing, generation, transmission, distribution, storage and usage of electric energy,
dielectric phenomena and measurements, high voltage engineering, electrical machines, power systems,
control systems, non-conventional energies, power electronics and drives, etc.
The 3rd C2E2–2016 retained the same format as the previous International Conferences at SKFGI,
specifically a two-day programme with plenary session format for the forenoon sessions followed by paral-
lel technical session format for the afternoon sessions of each day. Only the oral format had been kept for
the authors to present their research works during the parallel technical sessions. Professor (Dr.) Akhtar
Kalam of Victoria University, Melbourne, Australia being the Chief Guest, inaugurated the Conference.
Professor Kalam also delivered the opening keynote address of the conference at the forenoon session
on the first day. He explored the state-of-the-art of the smart power grids in the 21st century during
his talk. Dr. Guillermo Carpintero of Universidad Carlos III de Madrid, Spain, delivered the next key-
note address on photonic integrated circuit technology for ultra-high speed wireless communications.
Dr. Sekhar Bhattacharya of SSN Research Centre, Chennai, India, Er. Tulika Mehta, Director, Fortune
consultancy services, India, and Mr. Rajdeep Chowdhury, Department of Computer Applications, JIS
College of Engineering, India, delivered notable lectures during the forenoon plenary session of the sec-
ond day of the conference. Dr. Bhattacharyya discussed regarding the atomic layer deposition technique
in nanoelectronics and plasma enhanced chemical vapour deposition for photovoltaics during his lecture.
Er. Mehta talked about the advanced applied cognition neuroscience education technology to eradicate

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 drug addiction. The last invited speaker Mr. Chowdhury delivered his lecture on data warehouse per-
formance enhancement employing minimized query processing proposal and implementation of security
modus operandi. All broad scopes of the conference were covered by the keynote addresses as well as
invited lectures. We are sincerely grateful to the keynote and invited speakers who generously have con-
tributed their time, expertise and experience to these comprehensive lectures.
More than 140 research articles were submitted by the authors from all over the world. Each paper has
been peer-reviewed by at least two reviewers, drawn from academic institutions and industry from around
the world. And finally, 106 papers were accepted for oral presentation during the conference. All those
accepted papers were presented by the respective authors during the parallel technical sessions during the
afternoon sessions of each day of the conference. At each technical session, five parallel sessions were
simultaneously held; out of which two sessions were designated for electronics and communication engi-
neering related papers, two for electrical engineering related papers and one session was designated for the
papers fall under the scope of computer science and engineering. The presented papers collected in these
proceedings which provide a comprehensive reference of the current state-of-the-art in computer, com-
munication and electrical engineering. We are indebted to the efforts of all the reviewers, who undoubt-
edly have raised the quality of the proceedings. We are also earnestly thankful to all the authors who have
contributed their valuable research works to the conference.
We convey our heartiest thank to the managerial bodies of SKFGI for their immense help and supports
for organizing the event. We also thank Professor (Dr.) Abhijit Lahiri, Campus Director, SKFGI for his
enormous contribution in overall coordination with the contributing authors, invited speakers, publisher
and intense supervision during the programme. We are thankful to Mr. Biswadeepam Pal for his assist-
ance with graphic design and webpage development. We are also grateful for the cooperative advice from
Professor (Dr.) B. N. Basu with respect to planning of the conference. Finally, SKFGI is grateful to the
industrial and academic sponsors for providing financial support, the members of our Local Organizing
Committee, National and International Advisory Committees, and all the technical sponsors under whose
crucial auspices the C2E2–2016 experienced the utmost success.

Aritra Acharyya
March 2016

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 Frontiers in Computer, Communication and Electrical Engineering – Acharyya (Ed.)
© 2016 Taylor & Francis Group, London, ISBN: 978-1-138-02877-7

Advisory committees

INTERNATIONAL ADVISORY COMMITTEE

Dr. Tadao Nagatsuma, Professor, Department of Systems Information, Graduate School of Engineering
Science, Osaka University, Japan.
Dr. Tzyh-Ghuang Ma, Distinguished Professor, Group, Communication and Electromagnetic Engineering,
National Taiwan University of Science and Technology. Taiwan.
Dr. Dipak Ranjan Poddar, Emeritus Professor, Department of Electronics and Telecommunication
Engineering, Jadavpur University, Kolkata, India.
Dr. V. Rodolfo García Colón H., Registrar, IIE Centro de Posgrado, IEEE DEIS Adcom Member and
DEIS Chapters Chair
Dr. Sivaji Chakravorti, Professor, Electrical Engineering Department, Jadavpur University, Kolkata, India.
Dr. Nikhil Ranjan Pal, INAE Chair Professor, ECSU, Indian Statistical Institute, Kolkata, India.
Dr. Dharma P. Agrawal, Ohio Board of Regents Distinguished Professor, Department of EECS
University of Cincinnati, Ohio.

NATIONAL ADVISORY COMMITTEE

Dr. Chandan Sarkar, Professor, Department of Electronics and Telecommunication Engineering,

Jadavpur University, Kolkata, India.
Dr. Monojit Mitra, Professor, Department of Electronics and Telecommunication Engineering Indian
Institute of Engineering Science and Technology, Shibpur, Howrah, India.
Dr. Nandini Gupta, Professor, Department of Electrical Engineering, Indian Institute of Technology,
Kanpur, India.
Dr. Saibal Chatterjee, Professor, Department of Electrical Engineering, North Eastern Regional Institute
of Science & Technology, Arunachal Pradesh, India.
Dr. Mita Nasipuri, Professor, Department of Computer Science & Engineering, Jadavpur University,
Kolkata, India.
Dr. Soumya Pandit, Assistant Professor, Institute of Radio Physics and Electronics,
University of Calcutta, Kolkata, India.
Dr. Ujjwal Maulik, Professor, Department of Computer Science & Engineering, Jadavpur University,
Kolkata, India.
Dr. Suranjan Ghose, Professor, Department of Computer Science & Engineering, Jadavpur University,
Kolkata, India.

xiii

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LAHIRI_FM_CS3.indd xiv 3/15/2016 3:31:17 PM
 Frontiers in Computer, Communication and Electrical Engineering – Acharyya (Ed.)
© 2016 Taylor & Francis Group, London, ISBN: 978-1-138-02877-7

Organizing committees

CONFERENCE PATRONS

Prof. D. K. Basu, Chairman, B.O.G., SKFGI

Mr. B. G. Mallick, Chairman Trustee
Mr. D. K. Mondal, Secretary, Trustee
Mr. C. K. Bhattacharya, CEO, Trustee
Mr. K. C. Mondal, Treasurer, Trustee

CONFERENCE CHAIR

Professor B. N. Biswas, Chairman, Education Division, SKFGI

CONFERENCE CONVENER

Professor T. K. Sengupta, Chief Technical Director, SKFGI

CONFERENCE CO-CONVENER

Professor Abhijit Lahiri, Campus Director, SKFGI

CONFERENCE SECRETARY

Professor T. K. Dey, Additional Chief Technical Director, SKFGI

CONFERENCE COORDINATOR

Mr. Aritra Acharyya, Department of ECE, SKFGI

CONFERENCE LIAISON

Dr. S. N. Joshi, CSIR-CEERI, Pilani, Rajasthan

Professor B. N. Basu, Research Coordinator, SKFGI
Mr. Subhradeep Pal (On lien), SKFGI
Mr. Subhadip Chowdhury (On lien), SKFGI

xv

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 CONFERENCE HOST

Ms. Srima Nandi, SKFGI

PUBLICATION CHAIR

Dr. Rajib Bag, Dean of Student Affairs, SKFGI

TREASURER

Mr. Sourav Koley, Department of CSE, SKFGI

EDITOR IN CHIEF

Mr. Aritra Acharyya, Department of ECE, SKFGI

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 Frontiers in Computer, Communication and Electrical Engineering – Acharyya (Ed.)
© 2016 Taylor & Francis Group, London, ISBN: 978-1-138-02877-7

A microscopic view on the effect of anisotropy in the breakdown

phenomenon of the 4H-SiC power diodes

Subhashri Chatterjee, Adrija Das, Alka Singh, Tripti Guin Biswas & Aritra Acharyya
Supreme Knowledge Foundation Group of Institutions, Mankundu, Hooghly, West Bengal, India

ABSTRACT: In this paper, the authors have studied the effect of anisotropy on the static characteristics,
such as breakdown voltage, avalanche region voltage drop, avalanche width, etc., of 4H-SiC power diodes.
A sample of n+-n-p-p+ structured 4H-SiC power diodes having different structural and doping parameters
have been taken into consideration and a simulation study based on the drift-diffusion model has been
carried out by taking into account the material parameters of both <0001> and <1120 > oriented 4H-SiC
to investigate the influence of anisotropy exhibited by 4H-SiC due to those material parameters depend-
ing on the orientation of the wafer growth on the aforementioned static characteristics. Results show that
the <0001> oriented 4H-SiC power diodes have a larger breakdown voltage as compared to their <1120 >
counterparts. The reasons behind the better breakdown characteristics of <0001> oriented 4H-SiC power
diodes have also been discussed from a microscopic insight of the breakdown phenomena.

1 INTRODUCTION Schottky diodes, p-n junction diodes, p-i-n diodes,

Since the last two and half decades, one of the
most promising wide bandgap semiconductor
material, silicon carbide (SiC), has attracted the
attention of researchers for high-power and high-
frequency device applications (Weitzel et al. 1995,
Acharyya et al. 2013). Due to the excellent elec-
trical, thermal, and other physical properties of
SiC, such as high breakdown field, high saturation
drift velocity and mobility of charge carriers, high
thermal conductivity, etc., it turns out to be supe-
rior to conventional semiconductor materials, like
Si, GaAs, InP, etc., for high-power, high-temper-
ature, and high-frequency operational conditions.
The 4H-SiC excels other polytypes of SiC (e.g.,
6H-SiC, 3C-SiC, etc.) as the potential candidate
to be the base material of high-power and high-
frequency devices due to its large bandgap (Eg ≈
3.26 eV at 300 K), most favorable carrier transpor-
tation properties, and the availability of the most
advanced epitaxial growth.
Some of the properties, which are indispensi-
ble for high-power solid-state devices are (a) high
breakdown voltage, (b) negligible leakage current,
(c) very small on resistance, (d) high switching
speed, (e) high reliability throughout the opera-
tional lifetime, capacity of withstanding very
high temperature, and (f) cost effectiveness. In
this regard, the most favorable electrical, thermal,
and other physical properties of 4H-SiC enables
it to excel other polytypes of SiC as well as other
conventional semiconductor materials mentioned
earlier. Several solid-state power devices, such as
thyristors, UMOSFETs, SITs, RF MOSFETs, and
RF JFETs, based on 4H-SiC have already been
fabricated and their performances are found to
be superior to those based on Si, GaAs, InP, etc.
(Weitzel et al. 1995).
Experimental studies show that some impor-
tant material parameters, such as impact ioni-
zation rates, mobilities, and drift velocities of
charge carriers, in <0001> and <1120 > oriented
4H-SiC epitaxial wafers exhibit large anisotropy
(Hatakeyama et al. 2004). Since the abovemen-
tioned material parameters have a major role in
the breakdown mechanism of p-n junctions based
on both <0001> and <1120 > oriented 4H-SiC, the
orientation becomes crucial in the design of power
devices. Both experimental and simulation results
of breakdown phenomena in 4H-SiC diodes have
shown a large anisotropy. In the present paper, the
authors have studied the effect of anisotropy on
the static characteristics of 4H-SiC power diodes.
Simulation is carried out to obtain the spatial vari-
ations of electric field, particle current densities,
carrier densities as well as breakdown voltage, ava-
lanche region voltage drop, and avalanche width
in n+-n-p-p+ structured 4H-SiC power diodes hav-
ing different structural and doping parameters as a
function of bias current density. Simulation study
has been carried out by taking into account the
material parameters of both <0001> and <1120 >
oriented 4H-SiC to investigate the influence of
anisotropy exhibited by 4H-SiC due to those mate-
rial parameters depending on the orientation of
the wafer growth on the aforementioned static

LAHIRI_Book.indb 1 3/7/2016 10:52:57 AM

 characteristics of the power diodes under consid-
eration. Results show that the <0001> oriented
4H-SiC power diodes have a larger breakdown
voltage as compared to their <1120 > counterparts.
The reason behind the better breakdown charac-
teristics of <0001> oriented 4H-SiC power diodes
has also been discussed from microscopic insights
of the breakdown phenomena.
2 MATERIAL PARAMETERS
The material parameters of the base semiconduc-
tor play a major role in the breakdown mechanism
of reverse biased power diodes. Important material
parameters of 4H-SiC, such as energy bandgap (Eg
in eV), effective density of the states in the conduc-
tion band (Nc in m−3), effective density of states in
the valance band (Nv in m−3), density of the state
effective mass of charge carriers (md* in Kg), satu-
rated drift velocities of electrons and holes (vn(sat) and
vp(sat) in m s−1), diffusivity of electrons and holes (Dn
and Dp m2 s−1), dielectric constant (εr), thermal con-
ductivity (k in W m−1 K−1), etc., at room tempera-
ture (i.e., at 300 K) have been taken for simulation
from the published literature (Electronic Archive
2015, Lee 2008). In the year 2004, Hatakeyama et al.
experimentally measured the electron and hole ioni-
zation rates (αn and αp in m−1) in the 4H-SiC diodes
in two different directions, i.e., <0001> and <1120 >
directions (Hatakeyama et al. 2004). They fit their
experimental data with the well-known empirical
relation of the field dependence of the ionization
rates of the charge carriers in a semiconductor, i.e.,
α n p ξ ) = An p exp(( Bn p / ξ ); where ξ is the electric
field in V m−1 and An,p (m−1) and Bn,p (V m−1) are the
ionization coefficients. According to their report, the
fitting parameters’, An, Ap, Bn, Bp, values are found
to be different for <0001> and <1120 > oriented
4H-SiC. These values of An,p and Bn,p and the expres-
sion of αn,p(ξ) have been incorporated in the simula-
tion program to introduce anisotropy in 4H-SiC in
terms of the ionization rates of the charge carriers.
The low-field mobility model used in the present
simulation is taken to be
μn p μ n, p (min) (T )a
n p
{ }
( )
bn p
+ μ n, p (max) ⎡1 + ( N A N D ) N n p refe ⎤
⎣ ⎦
(T )an p ,
where NA and ND are the acceptor and donor con-
centrations, respectively. Other parameters, such as
μn,p(min), μn,p(max), an,p, bn,p, have been taken from the
published literature for 4H-SiC oriented in <0001>
and <1120 > directions (Schaffer et al. 1994). It can
be observed from the experimental results reported
LAHIRI_Book.indb 2
in (Schaffer et al. 1994) that the electron mobility
of <0001> oriented 4H-SiC is around 1.20 times of
that of the <1120 > oriented 4H-SiC above 200 K.
The widely used parallel field mobility model for
4H-SiC has been taken into account in the simula-
tion as a high-field mobility, which can be expressed
as
( )
1 cn p
μ n p (ξ ) = μ n0 p ⎡ + μ n pξ vn p sat ⎤
cn p
,
⎣ ⎥⎦
where cn,p = 2 and vn,p(sat) = 2 × 105 m s−1 have been
chosen for a high field mobility.
3 SIMULATION TECHNIQUE
A one-dimensional (1-D) model of reverse biased
n+-n-p-p+ structured Power Diode (PD) shown in
Figure 1 has been considered for the simulation. In
the present paper, simulation has been carried out
based on a drift-diffusion model to study the break-
down characteristics of PDs under consideration.
The spatial variations of the electric field (ξ(x)
vs. x), electron and hole current densities (Jn(x),
Jp(x) vs. x), and electron and hole concentrations
(n(x), p(x) vs. x) within the depletion layer of the
reverse biased PD can be obtained from the simul-
taneous numerical solution of fundamental device
equations, such as (a) Poisson’s equation, (b) com-
bined carrier continuity equations at steady-state,
(c) current density equations, and (d) mobile space
charge equation subject to appropriate boundary
conditions at the depletion layer edges.
Now the appropriate boundary conditions asso-
ciated with ξ(x), Jn(x), and Jp(x) to be imposed at
depletion layer edges, i.e., at x = 0 and x = W to
solve the aforementioned equations can be for-
mulated as follows. Due to the high conductivity
of n+- and p+-layers, the electric field within those
regions must be zero. Thus, the boundary condi-
tions for the electric field at x = 0 and x = W are
given by:
ξ( ) ξ ( x = W ) = 0. (1)
The normalized current density parameter (P(x))
may be defined as P(x) = (Jp(x) – Jn(x))/J0, where
J0 = Jn(x) + Jp(x) is the total bias current density.
Figure 1. 1-D model of the n+-n-p-p+ structured power
diode.
3/7/2016 10:52:57 AM
 The boundary conditions for Jn(x) and Jp(x) at x = 0 Table 1. Structural and doping parameters.
and x = W can be defined in terms of P(x) as:
Parameters PD1 PD2
⎛ 2JJ p ( x = ) ⎞ ⎫ Wn (μm)
P (x = ) = ⎜
2.50 2.00
− 1⎟ ⎪
⎝ J0 ⎠ ⎪ Wp (μm) 2.50 2.00
⎬, (2)
⎛ 2J n (x = W ) ⎞ ⎪ Wn+ (μm) 0.50 0.50
P (x = W ) = ⎜1 − ⎟⎠ ⎪
⎝ J0 ⎭ Wp+ (μm) 0.50 0.50
ND ( × 1022 m−3) 3.00 5.00
where Jp(x = 0) = Jps and Jn(x = W) = Jns; Jps and Jns NA ( × 1022 m−3) 3.00 5.00
are the electron and hole component of the ther- Nn+ ( × 1025 m−3) 5.00 5.00
mally generated reverse saturation current, respec- Np+ ( × 1025 m−3) 5.00 5.00
tively, where Jns,ps = (qDn,pni2/Ln,pND,A), Ln and Lp are
the diffusion lengths of the electrons and holes,
and ni is the intrinsic carrier concentration of the
base semiconductor at room temperature. For both
the cases, J0 >> Jns,ps after the breakdown of the p-n
junction; therefore, the ratios (2Jp(x = 0)/J0) and
(2Jn(x = 0)/J0) tend to become zero after the break-
down. Thus, the boundary conditions in equation
(6) reduce to P(x = 0) = –1 and P(x = W) = +1.

4 RESULTS AND DISCUSSION

Two power diodes having different structural

and doping parameters have been chosen for the
simulation study. The n- and p-side epitaxial layer
lengths (Wn and Wp) have been taken to be 2.50 μm
in the first diode (i.e., PD1) and those are taken
to be 2.00 μm each in the second one (i.e., PD2).
The doping concentrations of the epitaxial layers
have been chosen (ND = NA = 3.00 × 1022 m−3 in PD1
and ND = NA = 5.00 × 1022 m−3 in PD2) keeping in
mind that both of the diodes do not behave as high
punch-through diodes even at high bias current
densities. The thickness and doping concentra-
tions of the highly doped n+- and p+-contact layers
(Wn+, Wp+ and Nn+, Np+) are taken to be 0.50 μm
and 5.00 × 1025 m−3 each in both PD1 and PD2,
respectively. The structural and doping parameters
of both PD1 and PD2 are given in Table 1.
The numerical integration of ξ(x)-profile by
using Simpson’s –1/3 rule within x = 0 and x = W
and x = xA1 and x = xA2 provide the breakdown
voltage (VB) and avalanche zone voltage drop (VA)
for a particular J0. The VB and VA values in both
PD1 and PD2 based on both <0001> and <1120 >
oriented 4H-SiC have been obtained for differ-
ent bias current densities ranging from 0.7 × 108
to 1.4 × 108 A m−2 and plotted in Figures 2 and 3,
respectively. It is observed that both the break-
down voltage and avalanche region voltage drop
are greater in PD1s based <0001> oriented 4H-SiC
PDs as compared to their <1120 > counterparts.
The reason behind it can be easily explained in
the following way. Figure 4 shows the variations
Figure 2. Variation of breakdown voltage in <0001>
and <1120 > oriented 4H-SiC power diodes with bias cur-
rent densities.
of electron and hole ionization rates in <0001>
and <1120 > oriented 4H-SiC in an electric field.
It is very much clear from Figure 4 that within the
operating field range of both PDs as indicated by
the grey box, both the αn and αp values of <0001>
oriented 4H-SiC are smaller than its <1120 > coun-
terparts. Lower ionization rates signified that a
higher electric field is required to cause impact
ionization within the multiplication region of PDs
based in <0001> oriented 4H-SiC as compared to
those based in <1120 > oriented 4H-SiC. That is
why the electric field at each space point is found
to be greater in <0001> oriented 4H-SiC PDs than
those in <1120 > oriented 4H-SiC PDs. A higher
electric field at each space point obviously leads to
higher VB as well as VA in <0001> oriented 4H-SiC
PDs than in <1120 > oriented 4H-SiC PDs. Moreo-
ver, the inset of the Figure 4 shows the variations
of (αn/αp) in <0001> and <1120 > oriented 4H-SiC

LAHIRI_Book.indb 3 3/7/2016 10:52:58 AM


Figure 3. The variation of avalanche zone voltage drop
in <0001> and <1120 > oriented 4H-SiC power diodes
with bias current densities.
Figure 4. Variations of electron and hole ionization
rates in <0001> and <1120 > oriented 4H-SiC with elec-
tric field. Inset of the figure shows the variations of the
ratio of the hole to the electron ionization rates in <0001>
and <1120 > oriented 4H-SiC with electric field.
with the electric field. It is observed that the values
of the ratios (αn/αp) are around 70 and 1.5 within
the operating field range (indicated by the grey
box) of PD1 and PD2. Higher ionization rates of
holes as compared to electrons cause a narrower
p-side avalanche width xAp = (xA2 – xj) than that in
the n-side, i.e., xAn = (xj – xA1). Moreover, narrower
p-side avalanche width leads to smaller avalanche
region voltage drop in the p-side, i.e., VAp < VAn
(where VA = VAp + VAn). Since (αn /αp) ratio is much
larger in <0001> oriented 4H-SiC within the oper-
ating field range of the PDs, the values of (xAp /xAn)
LAHIRI_Book.indb 4
and (VAp /VAn) are found to be much smaller in
<0001> oriented 4H-SiC PDs as compared to their
<1120 > counterparts for any bias current density.
It is observed that the values of (xAp /xAn) and (VAp /
VAn) vary between 1.30 and 1.52 and 1.46 and 1.55,
respectively, in PDs based on <1120 > oriented
4H-SiC, while they vary between 3.40 and 3.60
and 4.00 and 4.20, respectively, in PDs based on
<0001> oriented 4H-SiC for the variation of J0
from 0.7 × 108 to 1.4 × 108 A m−2.
5 CONCLUSION
The authors have studied the influence of anisot-
ropy on the static characteristics of 4H-SiC power
diodes. Numerical simulation study based on drift-
diffusion model on the n+-n-p-p+ structured 4H-SiC
power diodes having different structural and dop-
ing parameters has been carried out by taking into
account the material parameters of both <0001>
and <1120 > oriented 4H-SiC to investigate the
influence of anisotropy exhibited by 4H-SiC due
to those material parameters depending on the
orientation of the wafer growth on the afore-
mentioned static characteristics. Results show
that the <0001> oriented 4H-SiC power diodes
have a larger
g breakdown voltage as compared to
their <1120 > counterparts. The results presented
in this paper will be extremely helpful for future
experimentalists for choosing the appropriate ori-
entation of the crystal growth of 4H-SiC for the
fabrication of power diodes having high voltage
ratings.
REFERENCES
Acharyya, A., & Banerjee, J.P. (2013). Potentiality of
IMPATT devices as terahertz source: An avalanche
response time based approach to determine the upper
cut-off frequency limits. IETE Journal of Research,
59(2), 118–127.
Electronic Archive: New Semiconductor Materials,
Characteristics and Properties (2015). Retrieved from
http://www.ioffe.ru/SVA/NSM/Semicond/SiC/index.
html.
Hatakeyama, T., Watanabe, T., Shinohe, T. (2004).
Impact ionization coefficients of 4H silicon carbide.
Applied Physics Letters, 85(8), 1380–1382.
Lee, H.S. (2008). Fabrication and Characterization of
Silicon Carbide Power Bipolar Junction Transistors.
PhD Dissertation, KTH.
Schaffer, W.J., Kong, H.S., Negley, G.H., and Palmour,
J.W. (1994). Hall Effect and C-V Measurement on
Epitaxial 6H—and 4H-SiC,” In Proc. of Inst. Phys.
Conf. Ser., 137 (pp. 155–159).
Weitzel, C.E., Palmour, J.W., Carter, C.H., Moore, K.,
Nordquist, K.J., Allen, S., Thero, C., and Bhatnagar,
M. (1995) Silicon Carbide High-Power Devices. IEEE
Transactions on Electron Devices, 43(10), 1732–1741.
3/7/2016 10:52:59 AM
 Frontiers in Computer, Communication and Electrical Engineering – Acharyya (Ed.)
© 2016 Taylor & Francis Group, London, ISBN: 978-1-138-02877-7

Wireless power transmission—part I: A brief history

Nirvik Patra, Debodyuti Banerjee, Subhashri Chatterjee, T.K. Sengupta,

Subhendu Chakraborty & Aritra Acharyya
Supreme Knowledge Foundation Group of Institutions, Mankundu, Hooghly, West Bengal, India

ABSTRACT: In this part of the paper, authors have discussed the historical background of the wireless
power transmission since the inception of it to the current state-of-the-art. This initial part of the paper
may be regarded as the introductory part of authors’ experimental studies on wireless power transfer
via near-field coupling of electrically-small transmitting and receiving loop antennas which have been
recently carried out at the Antenna and Propagation Laboratory, SKFGI, Mankundu. The theoretical
modeling of the transmitting and receiving loop antennas as the wireless power transfer module and the
corresponding experimental studies have been discussed in the successive parts later on as the continua-
tion of the same paper.

1 INTRODUCTION 19th century was the inception of wireless power

After the invention of electrical energy, the efficient
energy transportation became an imperative con-
cern for mankind. The biggest and sophisticated
energy transportation network is the electrical grid.
Distribution grids transport the electrical energy
from the point of its generation to the far ends in
a very efficient way. However, during the trans-
mission, a loss of around 30% of energy remains
unavoidable due to several reasons. Some poten-
tial modern-day applications significantly promote
the concept of electrical energy transportation and
distribution without the copper cables, i.e. wireless
energy transfer. Some of those prospective appli-
cations of wireless energy/power transfer are (a)
charging mobile devices, electrical cars, unmanned
aircrafts, etc., (b) driving home appliances like
irons, vacuum cleaners, television, etc., (c) sup-
plying power to the biomedical implants such as
pacemakers, cochlear implants, subcutaneous drug
supplier, etc. mankind has desired to transfer elec-
trical energy without use of wires from as far back
as the mid 1800s. In the year 1864, James C. Max-
well predicted the existence of electromagnetic
waves by means of his famous set of equations,
known as Maxwell’s equations (Maxwell 1964).
Later in 1884, John H. Poynting realized that the
Poynting vector would play an important role in
quantifying the energy/power of electromagnetic
wave (Poynting 1884). Reinforced by the Maxwell’s
equations, Heinrich Hertz first showed the experi-
mental evidence of radio waves by his spark-gap
radio transmitter in the year 1988 (Hertz 1888);
and this evidence of radio wave (i.e. the experimen-
tal validation of Maxwell’s equations) in the end of
transmission.
2 INITIATION BY NIKOLA TESLA
Nikola Tesla was the pioneer of wireless electri-
cal power transmission (Tesla 1904, Tesla 1914).
He initiated his efforts on wireless transmission
of electrical power on 1989, just after the Hertz’s
successful experiment. During 1889–1900, Tesla
carried out experiments in Colorado Springs, CO,
USA, related to wireless power transmission via
the electric field and capacitive coupling, as well as
transmission line or waveguide-like effects (Tesla
1891). In the year 1901, Tesla began the construc-
tion of Wardenclyffe Tower near Long Island
Sound, New York, UA (Figure 1) for broadcast-
ing, wireless communication and transmission of
wireless power. However, earlier than Tesla, Sir
J.C. Bose already demonstrated experimentally the
first millimeter-wave radio communication link
in the year 1894 at Presidency College, Kolkata,
India (Bondyopadhyay 1998). Later, Tesla believed
that the capability of his own invention for wireless
power transmission was even more significant than
its abilities as a way of wireless communication, it
has been said that Tesla’s experiments achieved to
light lumps several kilometers away from the source
without any wire connection. Nonetheless, due to
very low power transfer efficiency, depletion of
financial resources and most importantly the dan-
gerous nature of his experiments, Tesla finally dis-
carded his experimentations. He left this bequest
in the form of a patent that was never commer-
cially exploited (Tesla 1914). Thus, undoubtedly,

LAHIRI_Book.indb 5 3/7/2016 10:53:00 AM


Figure 1. Tesla’s Wardenclyffe Tower Facility. It was
dismantled during World War I for scrap metal.
if Sir J. C. Bose was the pioneer of wireless trans-
mission of information (i.e. wireless communica-
tion), the Nikola Tesla was the same of wireless
transmission of electrical power.
3 DIFFERENT METHODS OF WIRELESS
POWER TRANSMISION
Electromagnetic radiation which has been com-
prehensively used for wireless transmission of
information (voice and data) can also be used for
transportation of electrical energy/power to distant
end. Highly efficient transfer of electrical power is
possible in a directional way by means of micro-
waves (Glaser 1973). Though the said method is
extremely efficient, it has some significant disad-
vantages such as it requires line of sight path, it
is a dangerous mechanism for living beings, etc.
more viable option for efficient and harmless short
and medium range wireless energy transfer is the
use of electromagnetic resonance (Karalis et al.
2008, Kurs 2007). However a number of methods
are available for wireless energy transportation at
present days. Some of those are: (a) by means of
high power laser beam targeted to distant solar
cell of relevant detector (NASA 2003), (b) by
means of vibratory waves emitted and collected
by piezoelectric transducers (Hu et al. 2008), by
means of highly directive, high power microwaves
(Glaser 1973), and use of rectenna for conversion
of microwave energy to DC electrical energy with
a conversion energy exceeding 95% (Akkermans
et al. 2005, Ali et al. 2005, Shams et al. 2007,
Basset et al. 2007), (d) by means of resonant cou-
pling effect between the inductive coils of two LC
circuits, (Karalis et al. 2008, Kurs 2007, Gao 2007,
Low et al. 2009), etc.
The method of wireless electrical energy transfer
by means of resonant coupling of two coils capa-
LAHIRI_Book.indb 6
ble of transferring energy within a very short dis-
tance in order of few centimeters. But this method
involves some important advantages such as (a) it
can work in low frequencies which are harmless to
the living beings, (b) it is the lowest cost method,
(c) at resonant frequency, maximum absorption
rate is guaranteed at the receiver coil. When two
objects have the same resonant frequency, they can
be easily coupled in a resonant way which causes
transfer of energy from one object to another in
an efficient way. This simple principle has to be
exploited to transfer electrical energy from one
point to another point by means of electromag-
netic field. The resonant coupling can be broadly
classified into two broad categories such as (a)
inductive coupling (Mansor et al. 2008), (b) self-
resonance coupling. Inductive coupling is a form
of resonant coupling between two LC circuits hav-
ing the same resonance frequency. The electrical
energy is transferred from source to sink coil in a
very efficient manner provided that both of them
are separated by a very short distance. This phe-
nomenon can easily be explained by the Faraday’s
law of electromagnetic
g induction ((transformer emf
equation: ∇ × E = −∂∂ ∂t; where E and B are the
time varying electric and magnetic field vectors
respectively). However the self-resonance coupling
takes place between two coils due to the presence of
very small parasitic capacitance distributed within
those. Two coils having the same inductive values
(L), having same structural parameters (l = length,
A = cross-sectional area, N = number of turns)
and same core material (having same constitutive
parameters: σ = conductivity, ε = permittivity and
μ = permeability) constitute the same parasitic
capacitance value (Cp) theoretically. Thus the self-
resonance frequency associated with the coils is
frs LCC p ; where frs is much higher than the
resonance frequency of LC circuit for inductive
coupling ( fr LC
L Cl ), since the value of the
parasitic capacitance (Cp) of the coil is too low as
compared to the lumped capacitance (Cl) used in
the inductive coupling (Cp << Cl). In the year 2008,
Karalis et al. (Karalis et al. 2008) reported around
40% efficiency of Wireless Power Transfer (WPT)
between two self-resonance coils provided that r <<
d << λr; where r, d and λr are the radius of the coils,
separation between them and wavelength corre-
sponding to the resonance frequency respectively.
4 A BRIEF SUMMERY OF THE
PRESENT WORK
In the present work, a comprehensive experimental
investigation on Wireless Power Transfer (WPT)
have been carried out to study the near-field elec-
tromagnetic coupling between transmitting and
3/7/2016 10:53:00 AM

Figure 2. Pictorial view of (a) radial and (b) axial cou-
pling between transmitter (Tx) and receiver (Rx) coils.
receiving electrically-small loop antennas as well
as the self-resonance coupling between them. For
self-resonance coupling mechanism, the frequency
of the transmitted signal is kept same as the self-
resonance frequency (frs) of the transmitting and
receiving antenna system; however, for the near-
field electromagnetic coupling mechanism, the
frequency of the transmitted signal is kept well
above the frs subject to obtain high radiation effi-
ciency of the transmitting antenna. Experiments
have been carried out to study the Power Transfer
Efficiency (PTE) of the antenna system coupled in
axial and radial orientations as shown in Figures
2 (a) and (b) respectively, for both the abovemen-
tioned coupling mechanisms. Results show that
the better PTE is achieved in axial coupling mode
as compared to the radial coupling mode when the
self-resonance coupling mechanism is used; but
the usable frequency range (i.e. the bandwidth) is
found to be very small less than 1 MHz for this
coupling mechanism. The observation is reversed
(i.e. PTE associated with radial coupling orienta-
tion is found to be far better than that in axial cou-
pling orientation) when near-field electromagnetic
coupling mechanism is used and the bandwidth
for WPT for this mechanism is also found to much
broader ∼50 MHz.
5 CONCLUSION
Authors have briefly described the historical back-
ground of the wireless power transmission in this
part of the entire work. This initial part of the
paper may be regarded as the introductory part
LAHIRI_Book.indb 7
of authors’ experimental studies on wireless power
transfer via near-field coupling of electrically-small
transmitting and receiving loop antennas which
have been recently carried out at the Antenna and
Propagation Laboratory, SKFGI, Mankundu.
Further, the theoretical modeling of the trans-
mitting and receiving loop antennas as the wire-
less power transfer module and the corresponding
experimental studies have been discussed in the
successive parts later on.
REFERENCES
Akkermans, J. A. G., van Beurden, M. C., Doodeman,
G. J. N., and Visser, H. J. (2005). Analytical models
for low-power rectenna design,” IEEE Antennas and
Wireless Propagation Letters, 4, 187–190.
Ali, M., Yang, G., and Dougal, R. (2005). A new circu-
larly polarized rectenna for wireless power transmis-
sion and data communication,” IEEE Antennas and
Wireless Propagation Letters, 4.
Basset, P., Andreas Kaiser, B. L., Collard, D., and Bucha-
illot, L. (2007). Complete system for wireless power-
ing and remote control of electrostatic actuators by
inductive coupling. IEEE/ASME Transactions on
Mechatronics, 12(1), 23–31.
Bondyopadhyay, P. K. (1998). Sir J. C. Bose’s Diode
Detector Received Marconi’s First Transatlantic
Wireless Signal of December 1901 (The “Italian Navy
Coherer” Scandal Revisited). Proc. IEEE, 86(1).
Gao, J. (2007). Traveling magnetic field for homogene-
ous wireless power transmission. IEEE Transactions
on Power Delivery, 22(1), 507–514.
Glaser, P. E. (1973). Method and apparatus for convert-
ing solar radiation to electrical power. U.S. Patent 3
781 647.
Hertz, H. (1888). Ueber die Ausbreitungsgeschwindig-
keit der electrodynamischen Wirkungen. Annalen der
Physik, 270(7), 551–569.
Hu, H., Hu, Y., Chen, C., and Wang, J. (2008). A system
of two piezoelectric transducers and a storage circuit
for wireless energy transmission through a thin metal
wall. IEEE Transactions on Ultrasonics, Ferroelectrics,
and Frequency Control, 55(10), 2312–2319.
Karalis, A., Joannopoulos, J., Soljacic, M. (2008). Effi-
cient wireless non-radiative mid-range energy transfer.
Elsevier Annals of Physics, 323, 34–48.
Kurs, A. (2007). Power transfer through strongly coupled
resonances. Massachusetts Institute of Technology,
Master of Science in Physics Thesis.
Low, Z. N., Chinga, R. A., Tseng, R., and Lin, J. (2009).
Design and test of a high-power high-efficiency
loosely coupled planar wireless power transfer system.
IEEE Transactions on Industrial Electronics, 56(5),
1801–1812.
Mansor, H., Halim, M., Mashor, M., and Rahim, M.
(2008). Application on wireless power transmission
for biomedical implantable organ. Springer-Verlag
Biomed. Proceedings, 21, 40–43.
Maxwell, J. C. (1864). A dynamical theory of the electro-
magnetic field. Proceedings of Royal Society London,
XIII, 531.
3/7/2016 10:53:01 AM
 NASA (2003). Beamed laser power for UAVs. Dryden
Flight Research Center.
Poynting, J. H. (1884). On the Transfer of Energy in the
Electromagnetic Field. Philosophical Transactions of
the Royal Society of London, 175, 343–361.
Shams, K. M. Z., and Ali, M. (2007). Wireless power
transmission to a buried sensor in concrete. IEEE Sen-
sors Journal, 7(12), 1573–1577.
LAHIRI_Book.indb 8
Tesla, N. (1891). Experiments With Alternate Currents
of Very High Frequency and Their Application to
Methods of Artificial Illumination. New York, NY,
USA: AIEE.
Tesla, N. (1904). The Transmission of Electrical Energy
without Wires. Electrical World and Engineer.
Tesla, N. (1914). Apparatus for transmitting electrical
energy. U.S. Patent 1119732.
3/7/2016 10:53:01 AM
 Frontiers in Computer, Communication and Electrical Engineering – Acharyya (Ed.)
© 2016 Taylor & Francis Group, London, ISBN: 978-1-138-02877-7

Wireless power transmission—part II: Theoretical modeling

of transmitting and receiving electrically-small loop antennas

Nirvik Patra, Debodyuti Banerjee, Subhashri Chatterjee, T.K. Sengupta,

Subhendu Chakraborty & Aritra Acharyya
Supreme Knowledge Foundation Group of Institutions, Mankundu, Hooghly, West Bengal, India

ABSTRACT: In this part of the paper, the theoretical modeling of electrically-small loop antennas
as transmitting and receiving modules for wireless power transmission have been discussed in detail.
The proposed experimental setup for the measurements has also been described in brief at the end.

1 THEORY OF ELECTRICALLY-SMALL Er Eθ = 0, (1)

LOOP ANTENNAS
Eφ = η0
(βa )2 I 0 θ⎡ 1 ⎤ − jβr
⎢1 + e . (2)
Loop antennas may be classified into two catego- 4r ⎣ j βr ⎥⎦
ries such as (a) electrically-small and (b) electrical-
ly-large. If the overall length, i.e. the circumference
(C) of a loop antenna is less than one-tenth of the And the near-field magnetic field components are
wavelength of the transmitting/receiving signal given by (Balanis 2010)
(i.e. C < λ/10), then it is called electrically-small.
However, if the circumference of a loop antenna βa I θ⎡ 1 ⎤ − jβr
Hr j ⎢1 + e , (3)
is comparable to the free-space wavelength (i.e. 2r 2 ⎣ j βr ⎥⎦
C ∼ λ) then it is considered as electrically-large.
In the present paper, the frequency range under
Hθ = −
(βa )2 I 0 θ⎡ 1 1 ⎤ − jβr
study is 100 KHz–60 MHz and the corresponding ⎢1 + − ⎥e , (4)
4r ⎣ j βr (βr )2 ⎥⎦
wavelength range is 5–3000 m. But the diameter
of the transmitter (Tx) and receiver (Rx) coils are Hφ = 0. (5)
2a = 8 cm. therefore the overall length of both the
coils are C = 2πa ≈ 0.50 m << λ; therefore these can
In equations (1)–(5), Er, Eθ, E and Hr, Hθ, H
be considered as electrically-small.
are the r, θ, components of electric and mag-
In this section, at first the theory of electrically-
netic fields in spherical coordinate system respec-
small loop antenna is presented in brief. And
finally the expression for power transfer efficiency tively (where E (r,θ , φ ) = Er aˆr + Eθ aˆθ + Eφ aˆφ and
has been established for WPT between two near- H (r,θ , φ ) = H r aˆr + Hθ aˆθ + Hφ aˆφ ), η0 = μ0 / ε 0 =
field coupled Tx and Rx electrically-small loop 120π is the intrinsic impedance of free-space,
antennas. The near-field properties of the electri- β π / λ is the phase constant, a is the radius
cally-small loop antennas are taken into considera- of the loop and r is the distance of the near-field
tion since those are used for the WPT within a very observation point (P) from the origin (outside the
short distance (i.e. d ∼ 2a << λ). A single thin wire loop) as shown in Figure 1.
loop is assumed to be positioned symmetrically on If the electrically-small loop antenna has N number
the xy plane, at z = 0, as shown in Figure 2. Since of turns, then the near-field electric and magnetic
the overall length of the loop is very small as com- field components can be obtained by simply multi-
pared to the free-space wavelength (C << λ), thus plying N with those for single turn loop. Therefore
constant current distribution I = I0 (where I0 is a the near-field electric and magnetic field components
constant) throughout the loop is a valid approxi- of a multiple turn loop can be obtained as
mation. Now, by following the standard proce-
dure adopted by C. A. Balanis (Balanis 2010), the Er Eθ = 0, (6)
near-field electric and magnetic field components
can easily be obtained. The near-field electric field Eφ = η0
(β a )2
NII 0
N θ⎡ 1 ⎤ − jβr
⎢1 + ⎥e , (7)
components are given by (Balanis 2010). 4r ⎣ j βr ⎦

LAHIRI_Book.indb 9 3/7/2016 10:53:01 AM

 The r- and θ-components of W is given by

Wr = η0
( a )4 N 2 I 2 ⎛ sin θ ⎞
2
⎡ j ⎤
⎜⎝ ⎟ ⎢1 + 3⎥
, (12)
r ⎠ ⎢⎣ ( r ) ⎥⎦
0
32

β 3a 4 2 2 ⎡ 1 ⎤
Wθ jη0 N I 0 sinθ θ ⎢1 + 2⎥
, (13)
16r 3 ⎢⎣ ( β r ) ⎥⎦

respectively. Therefore the radiated power can be

calculated a (using equations (12) and (13))

Figure 1. Geometrical arrangement for analyzing a sin- ⎡ ⎤

gle turn electrically small loop antenna.
Prad = Re ⎢ ∫∫S W . dS ⎥
⎣ ⎦
⎡ ⎤
= Re ⎢ ∫∫S (Wr aˆr + Wθ aˆθ ). dS ⎥ (14)
⎣ ⎦
⎛π⎞
= η0 ⎜ ⎟ (β a ) N I 0 .
4 2
2
⎝ 12 ⎠

Moreover, the radiated power may be also writ-

ten as Prad = (1/2)|I0|2Rrad (where Rrad is the radiation
resistance), which can be equated to equation (14)
and from that equality, the value of Rrad can be cal-
culated as

⎛π⎞ ⎫
Rrad η0
⎝ 6⎠
( a )4 N 2 ⎪
2 ⎪
⎛ 2π ⎞ ⎛ βS ⎞ 2⎪
= η0 ⎜ ⎟ ⎜ ⎟ N ⎬ , (15)
⎝ 3 ⎠⎝ λ ⎠ ⎪
2
2⎛
C⎞ ⎪
= 20π ⎜ ⎟ N 2
⎪
⎝ λ⎠ ⎭

where S = πa2 and C = 2πa are the cross-sectional

area and circumference of the coil having circular
cross-section. Since Rrad is the function of λ, there-
fore it is a function of frequency (Rrad(f)).
Figure 2. Equivalent circuits of the electrically-small loop
antenna in both (a) transmitting and (b) receiving modes.
2 EQUIVALENT CIRCUITS OF
TRANSMITTING AND RECEIVING
βa NI θ⎡ 1 ⎤ − jβr
Hr j ⎢1 + e , (8) LOOP ANTENNAS
2r 2 ⎣ j βr ⎥⎦
The equivalent circuit of the Tx loop antenna
=−
(βa )2 NI
NI 0 θ⎡ 1 1 ⎤ − jβr (electrically-small) is shown in Figure 2(a). The
Hθ ⎢1 + − ⎥e , (9)
4r ⎣ j β r (βr )2 ⎥⎦ input impedance Zin across A1A1′ terminals is
given by
Hφ = 0. (10)
Zin Rin + jX
X in
Now the complex power density at any point = (Rrad Rac ) + j (X ext + X ), (16)
outside the multiple turn electrically-small loop
can be calculated as where Rrad is the radiation resistance given by equa-
tion (15), Rac is the AC loss resistance of the loop
W=
1
2 ( * 1
) (
E × H = − Eφ Hθ* aˆr + Eφ H r* aˆθ .
2
) (11)
conductor, Xext = 2πfLext is the external inductive reac-
tance, Xint = 2πfLint is the internal inductive reactance

10

LAHIRI_Book.indb 10 3/7/2016 10:53:03 AM

 of the loop antenna, Cp is the distributed stray or parasitic capacitance associated with the coils can
parasitic capacitance responsible for self-resonance easily be determined. The input admittance of the
of the loop antenna, Vs is the source voltage phasor coil can be written as
and Zs is the internal impedance of the source.
The AC loss resistance of the loop conduct- 1 1
ance can be calculated from the Dowell’s equation Yin Gin + jB
Bin = = , (22)
Zin Rin + jX
X in
(Dowell 1966) given by

⎛ l ⎞ ⎡ ⎤ where Gin = Rin/(Rin2 + Xin2) and Bin = –Xin/(Rin2 + Xin2)

⎛ 2⎞
Rac ( f ) = ⎜ mN ⎢Ξ1 + n 2p (m − ) Ξ2 ⎥ , (17) are the conductance and susceptance. Now, at the
⎝ δσ te ⎟⎠ ⎣ ⎝ 3 ⎠ ⎦ self-resonance frequency (frs), the magnitude of
the susceptance of Cp (|Bp| = 1/2πfrsCp) must be
where l is the length of the coil, δ π fσ
σμ is the equal to the magnitude of the susceptance of Yin
skin depth of the conductor at frequency f, σ is the (i.e. | p | f = frs | in | f = frs). Thus at the self-resonance
conductivity of the conductor, m is the number of frequency
layers, Ξ1 is the skin effect factor given by
Cp =
sinh (2Δ′ ) si (2 Δ ′ )
( R ( f ) + R ( f ) ) + 4 f ( L + L ( f ))
2 2
Ξ1 = , (18) 2 2
cosh (2Δ′ ) cos (2 Δ ′ )
rad rs ac rs rs ext rs
.
4π f ( L + L ( f ))
2 2
rs ext
x rrs

and Ξ2 is the proximity effect factor given by (23)

sinh (2Δ′ ) si (2 Δ ′ ) The equivalent circuit of the Rx coil in receiving
Ξ2 = , (19)
cosh (2Δ′ ) cos (2 Δ ′ ) mode is shown in Figure 2(b); where Voc is the open
circuit voltage induced across it, Zin is the input imped-
where Δ ′ represents the modified penetration ance of it given by the equation (16), VL is the voltage
across the RL. Thus the VL can be obtained as
depth Δ ′ = n p Δ, Δ represents the penetration
ration given by Δ = te δ , te is the equivalent diam- RL
eter of the wire having circular cross-section given VL Voc . (24)
RL Zin
by te π 4 t, t is the actual diameter of the wire,
n p te N 2a is the porosity factor. Thus equation
(17) takes into account both the skin and proxim- 3 CALCULATION OF POWER
ity effects. TRANSFER EFFICIENCY
In the present work, both the Tx and Rx coils have
a single layer, i.e. m = 1 and other dimensions are given Now the input power to the Tx coil is given by
by (i) t = 4.877 mm (6 SWG wire), (ii) 2a = 8 cm, (iii)
l = 8 cm, (iv) N = 30. The conductor of the wire is 2
copper; therefore the values of σ = 5.96 × 107 S m−1, ⎛ Vin ( p p) ⎞ ⎛ 1 ⎞
μ = 1.256629 × 10−6 H m−1 which are taken from the
Pin = ⎜ ⎟ ⎜ ⎟ cos ϕ iin , (25)
⎝ 2 2 ⎠ ⎝ Zin′ ⎠
reference (Technical Data for Copper 2015). Thus
the value of Rac can easily be calculated from equa-
where Zin′ = Zin || ( /2 j ffC C p ) is the input imped-
tion (17) as a function of frequency using the above
ance of the Tx coil across AA′ terminals,
mentioned parameter values.
ϕ in = tan −1 (Im(Zin′ ) / e(Ziin′ )) and Vin(p–p) is the peak-
Moreover, the external and internal inductances
to-peak signal amplitude measured across AA′ ter-
of the coils can be calculated from (Kraus 1992)
minals. Similarly, the power absorbed by the pure
⎡ ⎛ 16a ⎞ ⎤ resistive load RL at the receiving side is given by
Lext μ0 aN ⎢ ln ⎜ ⎟⎠ − 2 ⎥ , (20)
⎣ ⎝ t ⎦ 2
⎛ VL ( p p) f , d ) ⎞ ⎛ 1 ⎞
⎛ aN ⎞ π f μ0 Pout f , d ) = ⎜ ⎟ ⎜R ⎟, (26)
Lint ( f ) = ⎜ , (21) ⎝ 2 2 ⎠ ⎝ L⎠
⎝ π fft ⎟⎠ σ
where VL(p–p)(f,d) is the peak-to-peak signal ampli-
where μ0 = 4π × 10−7 H m−1 is the permeability of tude measured across BB′ terminals which is
free-space. obviously the functions of both frequency (f) of
If the self-resonance frequency ( frs) of the coils the transmitted signal and separation (d) between
can be measured experimentally, then from the the Tx and Rx coils. Therefore the Power Transfer
knowledge of frs, Lext and Lint, the value of the Efficiency (PTE) can be calculated as

11

LAHIRI_Book.indb 11 3/7/2016 10:53:04 AM

 ⎛ P f , d )⎞
PTE ( f d ) = ⎜ out ⎟⎠ . (27)
⎝ Pin

4 EXPERIMENTAL SETUP

The block diagram of the experimental setup is

shown in Figure 3. The AC signal is amplified
through a Class-B power amplifier and then fed
into the transmitting coil. A DC regulated ±15 V
bipolar power supply is used to provide the appro-
priate bias to the Class-B power amplifier. A Digital
Storage Oscilloscope (DSO-1) is connected across
the transmitting coil to obtain the direct readout of
the peak-to-peak amplitude (Vin(p–p)) and frequency
( f ) of the transmitted signal. In the receiver side, Figure 4. Transmitter (Tx) and receiver (Rx) coils cou-
a pure resistive load RL = 1 Ω is connected across pled in (a) axial and (b) radial orientations. Snap-shots
the receiver coil. Another Digital Storage Oscillo- of the arrangement for power pattern measurement
of the WPT system coupled in (c) axial and (d) radial
scope (DSO-2) is connected across the load (RL) to orientations.
obtain the read out of the peak-to-peak amplitude

(VL(p–p)( f, d)) and frequency ( f ) of the RF voltage

appeared across RL. Figures 4(a)–(d) show the
snaps of the Tx and Rx coils coupled in axial and
radial orientations along with the arrangement for
power pattern measurement of the WPT system in
both the said orientations.

REFERENCES

Balanis, C.A. (2010). Antenna Theory: Analysis and Design.

Figure 3. Experimental setup to study the WPT system
for both (a) radial and (b) axial coupling of Tx and Rx
coils.
3rd Edition, Wiley-India Edition, India, 231–246.
Dowell, P. (1966). Effect of eddy currents in transformers
windings. Proceedings of the Institution of Electrical
Engineers, 113(8), 1387–1394.
Technical Data for Copper. (2015). Retrieved from http://
periodictable.com/Elements/029/data.html.
Kraus, J.D. (1992). Electromagnetics. 4th Edition,
McGraw-Hill Book Co., New York, USA.

12

LAHIRI_Book.indb 12 3/7/2016 10:53:07 AM

 Frontiers in Computer, Communication and Electrical Engineering – Acharyya (Ed.)
© 2016 Taylor & Francis Group, London, ISBN: 978-1-138-02877-7

Wireless power transmission—part III: Experimental study

Nirvik Patra, Debodyuti Banerjee, Subhashri Chatterjee, T.K. Sengupta,

Subhendu Chakraborty & Aritra Acharyya
Supreme Knowledge Foundation Group of Institutions, Mankundu, Hooghly, West Bengal, India

ABSTRACT: The authors have carried out a comprehensive experimental study on Wireless Power
Transfer (WPT) by using both the self-resonance coupling and near-field electromagnetic coupling
between transmitting and receiving electrically-small loop antennas. For the first coupling mechanism,
the frequency of the transmitted signal is kept same as the self-resonance frequency of the transmitting
and receiving antenna system; however, for the second coupling mechanism, the frequency of the trans-
mitted signal is kept well above the self-resonance frequency subject to obtain high radiation efficiency
of the transmitting antenna. Experiments have been carried out to study the Power Transfer Efficiency
(PTE) of the antenna system coupled in axial and radial orientations for both the abovementioned cou-
pling mechanisms. Results show that the better PTE is achieved in axial coupling mode as compared to
the radial coupling mode when the self-resonance coupling mechanism is used; but the usable frequency
range (i.e. the bandwidth) is found to be very small less than 1 MHz for this coupling mechanism. The
observation is reversed when near-field electromagnetic coupling mechanism is used and the bandwidth
for WPT for this mechanism is also found to much broader ∼50 MHz.

1 MEASUREMENT OF FREQUENCY and (21) of Part II, the value of LT at resonance

RESPONSE frequency (1.4 MHz) is found to be LT = 5.86 μH.
Thus the parasitic capacitance (Cp) of the coil may
The aim of the present work as well as the proposed be obtained from equation (23) of Part II and its
setup for the experimental measurements have value is Cp = 2.20 nF at 1.4 MHz. It is interesting to
been already described in the earlier parts of the observe from Figure 1 that the PTEa is much greater
paper respectively (Patra et al. 2016a,b). Initially
the frequency response of the WPT system have
been studied for both radial and axial coupling
(R-coupling and A-coupling) of Tx and Rx coils
by keeping the separation between them d = 0 cm
and varying the frequency of the transmitted signal
(generated from function generator) from 100 KHz
– 100 MHz. The power transfer efficiency in both
the above mentioned coupling modes (PTEr and
PTEa) have been calculated by using the formula
given in equation (27) of Part II (Patra et al. 2016b)
and from the peak-to-peak amplitudes of the
transmitted and received signals (Vin(p–p)) and VL(p–p)
(f,d = 0)) readout from DSO-1 and DSO-2 respec-
tively for each frequency. The plots of PTEr and
PTEa as functions of frequency (within the range
of f = 100 KHz – 100 MHz) are shown in Figure 1.
Now the total inductance (LT(f) = Lext + Lint(f)) of
Tx and Rx coils can be calculated as functions of
frequency from equations (20) and (21) of Part II.
It is observed from Figure 1 that the self-resonance
frequency (frs) of both the coils (where both PTEr Figure 1. Frequency response of WPT system in both
and PTEa sharply attain their respective peaks) is radial and axial coupling of Tx and Rx coils for zero cen-
found to be frs = 1.4 MHz. From equations (20) timeter separation between them.

13

LAHIRI_Book.indb 13 3/7/2016 10:53:09 AM

 than PTEr at the resonance frequency frs = 1.4 MHz
( a (f f ) .67% and PTE Er ( f f ) = 53.91%).
r r
Stronger magnetic field coupling in A-coupling ori-
entation at resonance frequency as compare to the
near-field electromagnetic in R-coupling orienta-
tion is the cause of higher value of PTEa than PTEr
at frs. Very small value of radiation resistance Rrad
= 82.07 μΩ and comparatively larger value of loss
resistance Rac = 211.27 nΩ cause a very small radia-
tion efficiency €rad = (Rrad/(Rrad + Rac)) × 100 = 3.88
× 10–4% in R-coupling orientation at 1.4 MHz. Con-
sequently, the near-field electromagnetic coupling
in R-coupling orientation is very weak at 1.4 MHz.
However, at the resonance frequency frs = 1.4 MHz,
the impedance of both the coils become minimum
and purely resistive; which causes maximum flow
of AC current through then and leads to maximum
magnetic field coupling in axial orientation (i.e. in
A-coupling orientation).
Further, it is very interesting to observe from
Figure 1 that at the higher frequencies especially
f > 50 MHz, the values of PTEr significantly pre-
dominate over the values of PTEa. This fact can
be explained from Figure 2. The loss resistance
(Rac) and radiation resistance (Rrad) of the Tx coil
have been calculated as functions of frequency and
plots of Rac, Rrad versus frequency are shown in Fig-
ure 2. It is observed from Figure 2 that the values
of Rrad are much smaller and almost negligible as
compared to the values of Rac at the lower frequen-
cies. But the rate of increase of Rrad with respect
to frequency (i.e. dRac/df) is much larger than that
of Rac (i.e. dRac/df). It is interesting to note that
the values of Rrad become almost comparable to
the values of Rac, when the frequency increases
beyond 10 MHz. At f = 54.1 MHz, both of them
Figure 2. Variations of radiation resistance and loss
resistance of the coils with frequency. Inset of the figure
shows the variation of radiation efficiency of the trans-
mitting loop antenna with frequency. In all the graphs
the frequency ranges suitable for A-coupling (1–2 MHz)
and R-coupling (10–60 MHz) are highlighted by the light
gray and deep gray boxes respectively.
14
LAHIRI_Book.indb 14
become equal, Rrad = Rac = 1.83 ohm and corre-
sponding radiation efficiency becomes €rad = 50%.
The values of Rrad over take those of Rac while the
frequency increases above 54.1 MHz; which leads
to sharp increase of radiation efficiency of the Tx
coil. Thus the near-field electromagnetic coupling
in R-coupling orientation improves sharply for the
higher frequencies f > 10 MHz and due to the sig-
nificant increase of €rad beyond 54.1 MHz, PTEr
increase significantly. But at the same time, it may
be noted that these frequencies (f > 10 MHz) are
much larger than the self-resonance frequency of
the coils. Thus at higher frequencies (10 MHz ≤
f ≤ 60 MHz), the magnitude the input impedance
of the coils are much greater than that of its value
at resonance. Thus the AC current flowing in both
the coils is very small, causing very small magnetic
coupling. As a result of small amount of magnetic
coupling, the PTEa values are very small at the said
frequency range (10 MHz ≤ f ≤ 60 MHz).
2 MEASUREMENT OF POWER
TRANSFER EFFICIENCY VERSUS
DISTANCE CHARACTERISTICS
Power transfer efficiency versus distance charac-
teristics of the WPT system have been also investi-
gated by varying the separation between Tx and Rx
coils coupled in axial (i.e. magnetic field coupling)
and radial (i.e. near-field electromagnetic coupling)
directions. The above mentioned characteristics are
shown in Figures 3 and 4 for 1.4 MHz and 60 MHz
frequencies respectively.
Figure 3. Power transfer efficiency versus distance plots
of WPT system in radial and axial coupling orientations
at self-resonance frequency (frs = 1.4 MHz).
3/7/2016 10:53:09 AM
 It is observed from Figure 3 that the value of
PTEa is larger than the values of PTEr when the
separation of the coils are small (d ≤ 8 cm) at the
self-resonance frequency (frs = 1.4 MHz). However,
both the PTEa and PTEr become comparable for
higher separation between the coils (d > 8 cm) at
1.4 MHz. It suggests that the axial coupling must
be preferred over the radial coupling to obtain
better power transfer efficiency, especially for
smaller separation or very small distance WPT at
self-resonance frequency. Further, from Figure 4
it can be concluded that at 60 MHz (i.e. f >> frs),
radial coupling orientation is highly suitable for
WPT and its performance is even better than the
axial coupling orientation at self-resonance fre-
quency for larger separation between the Tx and
Rx coils.

3 MEASUREMENT OF Figure 5. Normalized power patterns of the receiving

RADIATION PATTERNS coil in yz plane for both radial and axial coupling orienta-
tions at self-resonance frequency (frs = 1.4 MHz) for 5 cm
Normalized power patterns of the Rx coil in yz separation between transmitter and receiver coils.
plane for both R- and A-coupling orientations
at self-resonance frequency frs = 1.4 MHz for
d = 5 cm are shown in Figure 5. The same pat-
terns for 60 MHz transmitted frequency for the
same separation (d = 5 cm) have been shown in
Figure 6. At self-resonance frequency, half power
beam width for A-coupling orientation is found
to be larger (HPBWa = 108.11°) than that for
R-coupling (HPBWr = 84.13°). The same nature
is also observed in the normalized power patterns

Figure 6. Normalized power patterns of the receiving

coil in yz plane for both radial and axial coupling orienta-
tions at 60 MHz for 5 cm separation between transmitter
and receiver coils.

at 60 MHz (i.e. HPBWa = 103.33° > HPBWr

Figure 4. Power transfer efficiency versus distance plots
of WPT systems in radial and axial coupling orientations
at f = 60 MHz.
= 88.39°). The smaller beam widths of R-coupling
orientation for both the cases suggest better
directivity of that orientation as compared to
the A-coupling orientation. Better directivity
naturally improves the received power density at
larger distance from the transmitter. Therefore,
R-coupling is always the preferable orientation for
longer distance WPT.

15

LAHIRI_Book.indb 15 3/7/2016 10:53:10 AM

 4 CONCLUSION
A comprehensive experimental study have been car-
ried out on wireless power transfer by using both the
self-resonance coupling and near-field electromag-
netic coupling between transmitting and receiving
electrically-small loop antennas. Experiments have
been carried out to study the frequency response,
Power Transfer Efficiency (PTE) versus distance
characteristics and power pattern characteristics
of the antenna system coupled in axial and radial
orientations for both the abovementioned coupling
mechanisms. It may be concluded from the experi-
mental results that the near-field electromagnetic
coupling mechanism is the better choice for WPT
between transmitting and receiving loop antennas
aligned in radial direction as compared to the self-
resonance coupling mechanism between transmit-
ting and receiving loop antennas aligned in axial
16
LAHIRI_Book.indb 16
direction especially when the separation between
the antennas is larger. The results are highly encour-
aging to make larger prototypes of the WPT system
for transmission of high power to confirm the better
suitability of radial coupling orientation for usable
amount of far-field power transmission.
REFERENCES
Patra, N., Banerjee, D., Chatterjee, S., Sengupta, T. K.,
and Acharyya, A. (2016a). Wireless Power Transmis-
sion—Part I: A Brief History. In Proceedings of C2E2
2016, SKFGI, Mankundu, WB, India, (pp. 5–7).
Patra, N., Banerjee, D., Chatterjee, S., Sengupta, T. K.,
and Acharyya, A. (2016b). Wireless Power Transmis-
sion—Part II: Theoretical Modeling of Transmitting
and Receiving Electrically-Small Loop Antennas. In
Proceedings of C2E2 2016, SKFGI, Mankundu, WB,
India, (pp. 8–11).
3/7/2016 10:53:11 AM
 Frontiers in Computer, Communication and Electrical Engineering – Acharyya (Ed.)
© 2016 Taylor & Francis Group, London, ISBN: 978-1-138-02877-7

Evaluation of ionization rates of charge carriers in a semiconductor

via a generalized analytical model based on multistage scattering
phenomena—part I: Wurtzite-GaN

Apala Banerjee, Subhashri Chatterjee, Adrija Das, Subhendu Chakraborty & Aritra Acharyya
Supreme Knowledge Foundation Group of Institutions, Mankundu, Hooghly, West Bengal, India

ABSTRACT: A comprehensive analytical model based on multistage scattering phenomena has been
used to evaluate the impact ionization rates of electrons and holes in Wz-GaN within the field range of
4.0 × 107–2.0 × 108 V m−1. The numerical results obtained from the proposed analytical model within the
field range under consideration have been compared with the ionization rate values calculated by using the
empirical relations fitted from the experimentally measured data. The calculated values of impact ioniza-
tion rates of electrons and holes in Wz-GaN are found to be in close agreement with the experimental
results especially for the electron and hole concentrations of 1023 m−3 which are same as those taken into
account in the experiment.

1 INTRODUCTION in addition to the usual scattering events like opti-

Avalanche multiplication by means of impact ioni-
zation of charge carriers within the active regions
reversed biased p-n junctions plays a significant
role in various microwave, millimeter-wave and
optoelectronic semiconductor devices. Several
theoretical models to describe and formulate the
impact ionization rates of charge carriers in a sem-
iconductor material had been proposed by differ-
ent researchers since last sixty years. Out of those,
most acceptable analytical models were proposed
by Wolff (Wolff 1954) in the year 1954 and Shock-
ley (Shockley 1961) in the year 1961. In the year
1961, Mole and Meyer (Mole et al. 1961) modified
the Shockley’s theory by considering different pos-
sible ways through which electron can cause ioni-
zation by acquiring energy equal and greater than
the ionization threshold energy. Two years later in
1963, Mole and Overstraeten (Mole et al. 1963)
proved that the theories of Wolff (Wolff 1954) and
Shockley (Shockley 1961) are applicable for low
and high field conditions respectively. One year
earlier of that, i.e. in the year 1962, Baraff (Bar-
aff 1962) had plotted the impact ionization rates
of charge carriers as function of electric field from
the numerical simulation technique without any
low or high field approximations. In the year 1975,
Ghosh and Roy (Ghosh et al. 1975) shown that the
higher carrier density in semiconductors enhance
the energy loss due to electron-electron collisions
which causes significant deterioration in ionization
rate of charge carriers. They considered the energy
loss occurred due to electron-electron interactions
cal phonon scattering ionization collisions in their
analysis. Ten years later in 1985, Singh and Pal
(Singh et al. 1985) adopted the similar approach
and evaluated the ionization rates of electrons and
holes in <100> oriented in GaAs. The calculated
results were in close agreement with the experi-
mental results of Ito et al. (Ito et al. 1978) and
Pearsall et al. (Pearsall et al. 1978). In addition to
that the theory proposed by Singh and Pal (Singh
et al. 1985) was successful to explain the behav-
ior of holes in GaAs as spin-orbit splitoff holes
and heavy holes at lower and higher field ranges
respectively.
Generation of Electron Hole Pairs (EHP) by
impact ionization process basically a multistage
phenomena. Several combinations of optical pho-
non scattering as well as carrier-carrier collision
events may take place prior to the generation of an
EHP via impact ionization. This microscopic view
of an EHP generation by means of impact ioniza-
tion has been first taken into account by Acharyya
et al. (Acharyya et al. 2014) in the year 2014. They
considered the all possible combinations of opti-
cal phonon scattering and carrier-carrier collision
events prior to the impact ionization and thereby
generation of an EHP. Finally the probability of
impact ionization has been obtained from a tri-
nomial distribution function which describes the
above mentioned multistage scattering phenom-
ena. Using the probability of impact ionization,
finally the analytical expression of ionization rate
of charge carriers in a semiconductor material has
been developed and using that the ionization rates

17

LAHIRI_Book.indb 17 3/7/2016 10:53:11 AM

 (l r + lcc ) ,
−1
of electrons and holes in 4H-SiC have been calcu- and Ei(e,h)c ≡ Ei(e,h)h for holes), lrc
(l ) (l )
lated as functions of electric field. The calculated −1 −1

results show better agreement with the experimen- lic i ehc

+ lcc , lirc i ehc
+ lr ; where lr, lcc
tal data (Konstantinov et al. 1997) as compared to and li(e,h)c are the mean free paths associated with
those calculated from the analytical expressions of optical phonon scattering, carrier-carrier collisions
Ghosh et al. (Ghosh et al. 1975) and Singh et al. and impact ionization respectively (lcc ≡ lee, li(e,h)c ≡
(Singh et al. 1985). li(e,h)e for electrons and lcc ≡ lhh, li(e,h)c ≡ li(e,h)h for holes),
In the present paper, similar approach (as in ref. q is the electronics charge (q = 1.6 × 10−19 C) and ξ
Acharyya et al. 2014) has been taken into account is the applied electric field.
to calculate impact ionization rates of both elec- Now considering the energy balance equation,
trons and holes in Wurtzite-GaN (Wz-GaN). i.e. applied energy per unit length equals to energy
The calculated results have been compared with loss due to optical phonon collision, carrier-car-
the values of electrons and holes ionization rates rier interaction and impact ionization, along with
of Wz-GaN obtained from the empirical relation the relative probabilities of impact ionization of
with the experimentally measured data of Kuni- charge carriers, impact ionization rates of charges
hiro et al. (Kunihiro et al. 1999) within the electri- carriers may be obtained as
cal field range under consideration. The calculated
results are found to be in good agreement with the ⎛ l ⎞⎛ dEeee ⎞
PTTe (ξ ) ξ−
dx ⎟⎠
experimental results.
⎝ leee ⎠ ⎝
α e (ξ ) = , (2)
⎛ lr ⎞
2 THEORETICAL MODEL ( − PTe (ξ )) r Te (ξ ) ⎜ 1 +
T E
⎝ lee ⎟⎠ i (e , h)e

Acharyya et al. (Acharyya et al. 2014) considered ⎛ l ⎞⎛ dE hhh ⎞

the multistage scattering phenomena by taking
into account a w-stage process; where w = 1, 2, 3,
4, ………, N, N + 1. During the first N stages, all
possible combinations of optical phonon scatter-
ing as well as carrier-carrier scattering events are
assumed to be occurred. At the final (N + 1)th stage,
the impact ionization is assumed to be occurred.
They have formulated the above mentioned w-stage
process by means of a trinomial distribution func-
tion. And finally by considering all possible values
of the number of stages, i.e. values of w varying
from 1 to ∞, the total probability of multistage
impact ionization initiated by electrons or holes
can be expressed as (PTc ≡ PTe for electrons and
PTc ≡ PTh for holes)
⎛ E i (e , h ) c ⎞
pi (e , h)c exp ⎜ − ⎟
⎝ qξlrc ⎠
PTc (ξ ) =
⎡ ⎧ ⎛ E ⎞ ⎛ E ⎞ ⎫⎤
⎢1 − ⎨ prc exp ⎜ − r ⎟ + pcc exp − cc ⎟ ⎬ ⎥
⎢⎣ ⎩ ⎝ qξlic ⎠ ⎝ qξlirc ⎠ ⎭ ⎥⎦
(1)
where pi(e,h)c, prc, pcc are the probabilities of occur-
rence of impact ionization, optical phonon
generation, carrier-carrier interaction after reach-
ing the respective energies (pi(e,h)c ≡ pi(e,h)e, prc ≡ pre
and pcc ≡ pee for electrons, pi(e,h)c ≡ pi(e,h)h, prc ≡ prh
and pcc ≡ phh for holes), Er is the energy of optical
phonons, Ecc is the average energy loss due to carrier-
carrier interation (Ecc ≡ Eee for electron-electron and
Ecc ≡ Ehh for hole-hole interaction), Ei(e,h)c is the ioni-
zation threshold energy (Ei(e,h)c ≡ Ei(e,h)e for electrons
PTTh (ξ ) ξ−
⎝ lhhh ⎠ ⎝ dx ⎟⎠
α h (ξ ) = , (3)
⎛ lr ⎞
( − PTh (ξ )) r Th (ξ ) ⎜ 1 +
T
⎝
E
lhh ⎟⎠ i (e , h) h
where ‹dEee/dx› and ‹dEhh/dx› are the average energy
loss per unit length due to electron-electron and
hole-hole collisions respectively (Acharyya et al.
2014). The effect of carrier density on αe.h(ξ) has
been incorporated by the dependence of lee and lhh
on the electron and hole concentrations (i.e. n and p)
respectively. Those are taken to be lee ( A e )c n −1 3
and lhh ( A h )d p −1 3 (Singh et al. 1985), where Ae,
Ah, c and d are dimensionless fitting parameters
which may be adjusted in numerical calculations
for obtaining the best fit of the experimental data.
,
3 NUMERICAL RESULTS
AND DISCUSSION
Numerical calculations have been carried out to
obtain the ionization rate of electrons and holes
in Wz-GaN as functions of applied electric field
within the field range 4.0 × 107 – 2.0 × 108 V m−1
using the analytical expressions given in equations
(2) and (3) in which the multistage scattering phe-
nomena have been taken into account for obtain-
ing the total probability of impact ionization of
the charge carriers. The calculated values of αe,h are
compared with the empirical relations fitted from
the experimental data measured by Kunihiro et al.
(Kunihiro et al. 1999) given by

18

LAHIRI_Book.indb 18 3/7/2016 10:53:11 AM

 ⎡ ⎛ Be , h ⎞ m ⎤
α e , h (ξ ) = Ae , h exp ⎢ ⎥,
⎢⎣ ⎝ ξ ⎠ ⎥⎦
where the ionization coefficients Ae, Be, Ae, Bh are
138.00 × 108 m−1, 14.28 × 108 V m−1, 6.867 × 108 m−1,
8.72 × 108 V m−1 respectively for ξ ≤ 108 V m−1 and
122.70 × 108 m−1, 13.63 × 108 V m−1, 3.84 × 108 m−1,
7.95 × 108 V m−1 respectively for ξ > 108 V m−1, while
m = 1 for the entire field range under considera-
tion (Kunihiro et al. 1999). Other material param-
eters of Wz-GaN such as bandgap (Eg = 3.39 eV),
ionization threshold energy of electrons
(Ei(e,h) e = 3.6612 eV) and holes (Ei(e,h)h = 3.5934 eV)
and corresponding mean free paths (li(e,h)e = 840 Å
and li(e,h)h = 1360 Å respectively), optical phonon
energy (Er = 91.2 meV) and corresponding mean
free path (lr = 42 Å), permittivity (εr = 8.9), etc.
at 300 K are taken from the experimental reports
(Electronic Archive 2015).
Variations of ionization rate of electrons and
holes in Wz-GaN obtained from the analytical
model presented in this paper with inverse of the
electric field for different electron and hole con-
centrations respectively are shown in Figures 1
and 2. The same variations obtained from the
empirical relations given in equations (4) (Kunihiro
et al. 1999) are also shown in Figures 1 and 2. The
parameters Ae, c, Ah and d associated with the
mean free path of electron-electron and hole-hole
Figure 1. Ionization rate of electrons in Wz-GaN versus
inverse of applied electric field. Points ( ) represent the
plot of empirical relation given by equation (4) fitted
from experimental data of Kunihiro et al. (Kunihiro et al.
1999) (electron concentration in (Kunihiro et al. 1999) is
n = 1023 m−3).
LAHIRI_Book.indb 19
(4)
Figure 2. Ionization rate of holes in Wz-GaN versus
inverse of applied electric field. Points (•) represent the
plot of empirical relation given by equation (4) fitted
from experimental data of Kunihiro et al. (Kunihiro
et al. 1999) (hole concentration in (Kunihiro et al. 1999)
is p = 1023 m−3).
collisions (lee and lhh) are adjusted in numerical cal-
culations for the best fit of the experimental data.
In the present analytical model the best fittings
for electron and hole ionization rates described
by equations (2) and (3) with the empirical rela-
tions describing the field variations of the same
parameters, i.e. equations (4) are obtained from
lee = (0.75)3.12 n−1/3 and lhh = (0.77)3.18 p−1/3 m respec-
tively. It can be observed from Figures 1 and 2
that the analytical expressions of ionization rates
considering the multistage scattering phenomena
presented in this paper are in close agreement with
respect to the experimental data (Kunihiro et al.
1999) at any electric field especially for the elec-
tron and hole concentrations of 1023 m−3 which
are same those taken for the experiment (Kunihiro
et al. 1999). It is also noteworthy from Figures 1
and 2 that the impact ionization rate of charge
carriers decreased significantly when the carrier
concentrations are increased. This decrement of
impact ionization rates are more pronounced for
the carrier concentrations of 1021 m−3 and above
of it. Degradation of impact ionization probabili-
ties for both electrons and holes as a consequent
of increase of energy loss per unit length due to
increased amount of electro-electron and hole-
hole collisions is responsible for decrement of
impact ionization rate of charge carriers at higher
carrier concentrations. Moreover the degradations
impact ionization rate of both electrons and holes
are found to be more severe at lower electric field
19
3/7/2016 10:53:12 AM
 values especially below 1.0 × 108 V m−1 for all car-
rier densities. At lower electric fields the supplied
energy per unit length (qξ) is smaller and compa-
rable to the energy loss per unit length due to the
carrier-carrier interactions which leads to more
degradation in impact ionization probabilities
at those electric fields as compared to at higher
fields. Thus the values of ionization rates are more
affected by energy loss due to carrier-carrier colli-
sions at lower electric fields.
4 CONCLUSION
In this paper, a comprehensive analytical model
based on multistage scattering phenomena has
been used to evaluate the impact ionization rates
of electrons and holes in Wz-GaN within the field
range of 4.0 × 107–2.0 × 108 V m−1. The numeri-
cal results obtained from the proposed analytical
model within the field range under consideration
have been compared with the ionization rate val-
ues calculated by using the empirical relations fit-
ted from the experimentally measured data. The
calculated values of impact ionization rates of
electrons and holes in Wz-GaN are found to be
in close agreement with the experimental results
especially for the electron and hole concentra-
tions of 1023 m−3 which are same as those taken
into account in the experiment. The effect of vary-
ing charge density and corresponding variations
of energy loss due to carrier-carrier collisions on
the impact ionization rate of charge carriers in the
base semiconductor can be taken into account for
the analysis or simulation of several microwave,
millimeter-wave and optoelectronic devices by
using the analytical expressions developed in this
paper.
20
LAHIRI_Book.indb 20
REFERENCES
Acharyya, A., Banerjee, J. P. (2014). A generalized ana-
lytical model based on multistage scattering phenom-
ena for estimating the impact ionization rate of charge
carriers in semiconductors. Journal of Computational
Electronics, 13, 917–924.
Baraff, G. A. (1962). Distribution functions and ioniza-
tion rates for hot electrons in semiconductors. Phys.
Rev. 128, 2507.
Electronic Archive: New Semiconductor Materials, Char-
acteristics and Properties (2015). Retrieved from http://
www.ioffe.ru/SVA/NSM/Semicond/GaN/ index.html.
Ghosh, R., and Roy, S. K. (1975). Effect of electron-electron
interactions on the ionization rate of charge carriers in
semiconductors. Solid-State Electronics, 18, 945–948.
Ito, M., Kagawa, S., Kaneda, T., and Yamaoka, T. (1978).
Ionization rates for electrons and holes in GaAs. Jour-
nal of Applied Physics, 49, 4607.
Konstantinov, A. O., Wahab, Q., Nordell, N., and Lin-
defelt, U. (1997). Ionization rates and critical fields in
4H-Silicon Carbide. Applied Physics Letters, 71, 90–92.
Kunihiro, K., Kasahara, K., Takahashi, Y., Ohno, Y. (1999).
Experimental evaluation of impact ionization coefficients
in GaN. IEEE Electron Device Letter, 20, 608–610.
Moll, J. L., and Meyer, N. I. (1961). Secondary multipli-
cation in silicon. Solid-State Electronics, 3, 155–158.
Moll, J. L., and Overstraeten, R. V. (1963). Charge multi-
plication in silicon p-n junctions. Solid-State Electron-
ics 6, 147–157.
Pearsall, T. P., Capasso, F., Nahory, R. E., Pollack, M.
A., and Chelikowsky, J. R. (1978). The band structure
dependence of impact ionization by hot carriers in semi-
conductors: GaAs. Solid-State Electronics, 21, 297–302.
Shotckey, W. (1961). Problems related to p-n junctions in
silicon. Solid-State Electronics, 2, 35–67.
Singh, S. R., and Pal, B. B. (1985). Ionization rates of
electrons and holes in GaAs considering electron-
electron and hole-hole interactions. IEEE Trans. on
Electron Devices, 32(3), 599–604.
Wolff, P. A. (1954). Theory of electron multiplication sili-
con and germanium. Phys. Rev. 95, 1415.
3/7/2016 10:53:13 AM
 Frontiers in Computer, Communication and Electrical Engineering – Acharyya (Ed.)
© 2016 Taylor & Francis Group, London, ISBN: 978-1-138-02877-7

Evaluation of ionization rates of charge carriers in a semiconductor

via a generalized analytical model based on multistage scattering
phenomena—part II: Type-IIb diamond and 6H-SiC

Apala Banerjee, Adrija Das, Subhashri Chatterjee, Subhendu Chakraborty & Aritra Acharyya
Supreme Knowledge Foundation Group of Institutions, Mankundu, Hooghly, West Bengal, India

ABSTRACT: The analytical model based on multistage scattering phenomena as discussed in the ear-
lier part of the paper has been used to evaluate the impact ionization rates of charge carriers in type-IIb
diamond and 6H-SiC within the field ranges of 4.0 × 107–1.0 × 108 V m−1 and 5.0 × 107–5.0 × 108 V m−1
respectively. The calculated results have been compared with the ionization rate values calculated by using
the empirical relations fitted from the experimentally measured data. The calculated values of impact
ionization rates of charge carriers in both type-IIb diamond and 6H-SiC are found to be in close agree-
ment with the experimental results especially for the electron and hole concentrations of 1022 m−3 which
are same as those taken into account in the experiments.

1 INTRODUCTION
The generalized analytical model based on multi-
stage scattering phenomena proposed by Ach-
aryya et al. (Acharyya et al. 2014) has been used
to evaluate the impact ionization rates of charge
carriers in type-IIb diamond and 6H-SiC within
the field ranges of 4.0 × 107–1.0 × 108 V m−1 and
5.0 × 107–5.0 × 108 V m−1 respectively. The detail of
the theoretical model has already been discussed
in the earlier part of the paper (Chatterjee et al.
2016). The numerical results obtained from the
proposed analytical model within the field ranges
under consideration have been compared with
the ionization rate values calculated by using the
empirical relations fitted from the experimentally
measured data (Konorova et al. 1983, Dmitriev
et al. 1983). The calculated values of impact ioni-
zation rates of charge carriers in both type-IIb
diamond and 6H-SiC are found to be in close
agreement with the experimental results especially
for the electron and hole concentrations of 1022
m−3 which are same as those taken into account in
the experiments (Konorova et al. 1983, Dmitriev
et al. 1983).
2 CALCULATION OF IMPACT
IONIZATION RATES OF CHARGE
CARRIERS IN TYPE-IIB DIAMOND
Numerical calculations have been carried out to
obtain the ionization rate of electrons and holes in
type-IIb diamond as functions of applied electric
field within the field range 4.0 × 107–1.0 × 108 V m−1
using the analytical expressions given in equations
(2) and (3) of the Part I of this paper (Chatterjee
et al. 2016) in which the multistage scattering phe-
nomena have been taken into account for obtain-
ing the total probability of impact ionization of
the charge carriers. The calculated values of αe,h are
compared with the empirical relations fitted from
the experimental data measured by Konorova et al.
(Konorova et al. 1983) given by
⎡ ⎛ Be , h ⎞ m ⎤
α e , h (ξ ) = Ae , h exp ⎢ ⎥, (1)
⎢⎣ ⎝ ξ ⎠ ⎥⎦
where the ionization coefficients Ae, Be, Ae, Bh are
193.50 × 108 m−1, 7.749 × 108 V m−1, 193.50 × 108
m−1, 7.749 × 108 V m−1 respectively, while m = 1 for
the entire field range under consideration (Kono-
rova et al. 1983). It is observed from the experi-
mental measurement of Konorova et al. (Konorova
et al. 1983), the ionization rates of both electrons
and holes are same (i.e. αe = αh) in type-IIb dia-
mond for the entire field range under consideration.
Other material parameters of type-IIb diamond
such as bandgap (Eg = 5.48 eV), ionization thresh-
old energy of electrons (Ei(e,h)e = 6.1376 eV) and
holes (Ei(e,h)h = 6.1376 eV) and corresponding mean
free paths (li(e,h)e = 3400 Å and li(e,h)h = 3400 Å respec-
tively), optical phonon energy (Er = 160.0 meV)
and corresponding mean free path (lr = 170 Å),
permittivity (εr = 5.7), etc. at room temperature
(i.e. T = 300 K) are taken from the experimental
reports (Electronic Archive 2015).

21

LAHIRI_Book.indb 21 3/7/2016 10:53:13 AM

 Variations of ionization rate of electrons and
holes in type-IIb diamond obtained from the ana-
lytical model presented in the Part I of this paper
with inverse of the electric field for different elec-
tron and hole concentrations are shown in Figure 1.
The same variation obtained from the empirical
relation given in equation (1) (Konorova et al.
1983) is also shown in Figure 1. The parameters
Ae, c, Ah and d associated with the mean free path
of electron-electron and hole-hole collisions (lee
and lhh) are adjusted in numerical calculations for
the best fit of the experimental data. In the present
analytical model the best fittings for electron and
hole ionization rates described by equations (2) and
(3) of the Part I of this paper with the empirical
relations describing the field variations of the same
parameters, i.e. equation (1) are obtained from
lee = (0.03)0.54 n–1/3 and lhh = (0.03)0.54 p–1/3 m respec-
tively. It can be observed from Figure 1 that the
analytical expressions of ionization rates consider-
ing the multistage scattering phenomena presented
in this paper are in close agreement with respect to
the experimental data (Konorova et al. 1983) at any
electric field especially for the electron and hole con-
centrations of 1022 m−3 which are same those taken
for the experiment (Konorova et al. 1983). It is also
noteworthy from Figure 1 that the impact ioniza-
tion rate of charge carriers decreased significantly
when the carrier concentrations are increased. This
decrement of impact ionization rates are more pro-
nounced for the carrier concentrations of 1021 m−3
Figure 1. Ionization rates of electrons and holes in type-
IIb diamond versus inverse of applied electric field. Points
( ) represent the plot of empirical relation given by equa-
tion (1) fitted from experimental data of Konorova et al.
(Konorova et al. 1983) (electron and hole concentrations in
(Konorova et al. 1983) is n, p = 1022 m−3).
22
LAHIRI_Book.indb 22
and above of it. Degradation of impact ionization
probabilities for both electrons and holes as a con-
sequent of increase of energy loss per unit length
due to increased amount of electro-electron and
hole-hole collisions is responsible for decrement of
impact ionization rate of charge carriers at higher
carrier concentrations. Moreover the degradations
impact ionization rate of both electrons and holes
are found to be more severe at lower electric field
values especially below 7.0 × 107 V m−1 for all car-
rier densities. At lower electric fields the supplied
energy per unit length (qξ) is smaller and compa-
rable to the energy loss per unit length due to the
carrier-carrier interactions which leads to more
degradation in impact ionization probabilities
at those electric fields as compared to at higher
fields. Thus the values of ionization rates are more
affected by energy loss due to carrier-carrier colli-
sions at lower electric fields.
3 CALCULATION OF IMPACT
IONIZATION RATES OF CHARGE
CARRIERS IN 6H-SILICON CARBIDE
Numerical calculations have also been carried out to
obtain the ionization rates of both types of charge
carriers in 6H-SiC as functions of applied electric
field within the field range 5.0 × 107–5.0 × 108 V m−1
using the analytical expressions given in equations
(2) and (3) of the Part I of this paper (Chatterjee
et al. 2016) in which the multistage scattering phe-
nomena have been taken into account for obtain-
ing the total probability of impact ionization of
the charge carriers. The calculated values of αe,h
are compared with the empirical relations fitted
from the experimental data measured by Dmitriev
et al. (Dmitriev et al. 1983) given by the equations
(1). The ionization coefficients Ae, Be, Ae, Bh are
4.65 × 106 m−1, 12.00 × 108 V m−1, 4.65 × 108 m−1,
12.00 × 108 V m−1 respectively, while m = 1 for the
entire field range under consideration (Dmitriev
et al. 1983). It is observed from the experimental
measurement of Dmitriev et al. (Dmitriev et al.
1983), the ionization rate of holes is 100 times
greater than that of electrons (i.e. αe = αh/100) in
6H-SiC for the entire field range under considera-
tion. Other material parameters of 6H-SiC such
as bandgap (Eg = 2.86 eV), ionization threshold
energy of electrons (Ei(e,h)e = 5.2052 eV) and holes
(Ei(e,h)h = 4.4330 eV) and corresponding mean free
paths (li(e,h)e = 1600 Å and li(e,h)h = 600 Å respectively),
optical phonon energy (Er = 104.2 meV) and cor-
responding mean free path (lr = 40 Å), permittivity
(εr = 9.66), etc. at 300 K are taken from the experi-
mental reports (Electronic Archive 2015).
Variations of ionization rate of electrons and
holes in 6H-SiC obtained from the analytical model
3/7/2016 10:53:13 AM
 presented in earlier part of this paper with inverse of
the electric field for different electron and hole con-
centrations respectively are shown in Figures 2 and
3. The same variations obtained from the empirical
relations given in equations (1) (Dmitriev et al. 1983)
are also shown in Figures 2 and 3. The parameters
Ae, c, Ah and d associated with the mean free path of
electron-electron and hole-hole collisions (lee and lhh)
are adjusted in numerical calculations for the best fit
of the experimental data. In the present analytical
model the best fittings for electron and hole ioniza-
tion rates described by equations (2) and (3) of Part
I of this paper with the empirical relations describ-
ing the field variations of the same parameters,
i.e. equations (1) are obtained from lee = (3.75)3.86
n–1/3 and lhh = (2.65)2.05 p–1/3 m respectively. It can
be observed from Figures 2 and 3 that the analyti-
cal expressions of ionization rates considering the
multistage scattering phenomena presented in this
paper are in close agreement with respect to the Figure 3. Ionization rate of holes in 6H-SiC versus
experimental data (Dmitriev et al. 1983) at any elec- inverse of applied electric field. Points ( ) represent
tric field especially for the electron and hole concen- the plot of empirical relation given by equation (1) fit-
trations of 1022 m−3 which are same those taken for ted from experimental data of Dmitriev et al. (Dmitriev
the experiment (Dmitriev et al. 1983). et al. 1983) (hole concentration in (Dmitriev et al. 1983)
It is also noteworthy from Figures 2 and 3 is p = 1022 m−3).
that the impact ionization rate of charge carriers
decreased significantly when the carrier concentra-
tions are increased. This decrement of impact ioni- electrons and holes as a consequent of increase of
zation rates are more pronounced for the carrier energy loss per unit length due to increased amount
concentrations of 1021 m−3 and above of it. Degra- of electro-electron and hole-hole collisions is
dation of impact ionization probabilities for both responsible for decrement of impact ionization rate
of charge carriers at higher carrier concentrations.
Moreover the degradations impact ionization rate
of both electrons and holes are found to be more
severe at lower electric field values especially below
1.0 × 108 V m−1 for all carrier densities. At lower
electric fields the supplied energy per unit length
(qξ) is smaller and comparable to the energy loss
per unit length due to the carrier-carrier interac-
tions which leads to more degradation in impact
ionization probabilities at those electric fields as
compared to at higher fields. Thus the values of
ionization rates are more affected by energy loss
due to carrier-carrier collisions at lower electric
fields.

4 CONCLUSION

In this part of the paper, the analytical model based

Figure 2. Ionization rate of electrons in 6H-SiC ver-
sus inverse of applied electric field. Points ( ) represent
the plot of empirical relation given by equation (1) fit-
ted from experimental data of Dmitriev et al. (Dmitriev
et al. 1983) (electron concentration in (Dmitriev et al.
1983) is n = 1022 m-3).
on multistage scattering phenomena as discussed
in the earlier part has been used to evaluate the
impact ionization rates of charge carriers in type-
IIb diamond and 6H-SiC within the field ranges of
4.0 × 107–1.0 × 108 V m−1 and 5.0 × 107–5.0 × 108 V
m−1 respectively. The calculated results have been
compared with the ionization rate values calculated
by using the empirical relations fitted from the

23

LAHIRI_Book.indb 23 3/7/2016 10:53:13 AM

 experimentally measured data. The calculated
values of impact ionization rates of charge carriers
in both type-IIb diamond and 6H-SiC are found
to be in close agreement with the experimental
results especially for the electron and hole concen-
trations of 1022 m−3 which are same as those taken
into account in the experiments. The effect of vary-
ing charge density and corresponding variations of
energy loss due to carrier-carrier collisions on the
impact ionization rate of charge carriers in the base
semiconductor can be taken into account for the
analysis or simulation of several microwave, mil-
limeter-wave and optoelectronic devices by using
the analytical expressions developed in this paper.
REFERENCES
Acharyya, A., Banerjee, J.P. (2014). A generalized analyt-
ical model based on multistage scattering phenomena
24
LAHIRI_Book.indb 24
for estimating the impact ionization rate of charge
carriers in semiconductors. Journal of Computational
Electronics, 13, 917–924.
Chatterjee, S., Das, A., and Acharyya, A. (2016). Evalua-
tion of Ionization Rates of Charge Carriers in a Semi-
conductor via a Generalized Analytical Model Based
on Multistage Scattering Phenomena—Part I: Wurtz-
ite-GaN. in Proceedings of 3rd International Confer-
ence C2E2 2016, SKFGI, Mankundu, WB, India.
Dmitriev, A.P., Kanstantinov, A.O., Litvin, D.P., and
Sankin, V.I. (1983). Impact ionization and supperlat-
tice in 6H-SiC. Sov. Phys.–Semicond, 17, 686–689.
Electronic Archive: New Semiconductor Materials,
Characteristics and Properties (2015). Retrieved from
http://www.ioffe.ru/SVA/NSM/Semicond/GaN/ index.
html.
Konorova, E.A., Kuznetsov, Y.A., Sergienko, V.F.,
Tkachenko, S.D., Tsikunov, A.K., Spitsyn, A.V.,
and Danyushevski, Y.Z. (1983). Impact ionization in
semiconductor structures made of ion-implanted dia-
mond. Sov. Phys.–Semicond, 17, 146–149.
3/7/2016 10:53:14 AM
 Frontiers in Computer, Communication and Electrical Engineering – Acharyya (Ed.)
© 2016 Taylor & Francis Group, London, ISBN: 978-1-138-02877-7

Design and development of smart traffic lighting

Suman Roy, Prasenjit Rakshit, Soumyadeep Nandy, Pranabesh Chakraborty,

Sourav Mukhopadhyay & Vishwanath Gupta
Department of Electrical Engineering, Supreme Knowledge Foundation Group of Institutions, Mankundu, India

ABSTRACT: In the proposed work, a fuzzy logic based inference system based waiting time predic-
tor system for traffic control has been designed and the hardware model for the traffic lighting system
has been developed using ARDUINO micro-controller kit. The fuzzy logic inference system has been
designed using raw traffic data collected manually at a particular road intersection and the predicted wait-
ing time has been found nearly equal to the observed waiting time. The hardware model has been designed
with a special feature incorporated into it to prevent excess fuel wastage and also prevent accidents. The
results that have been found are satisfactory.

1 INTRODUCTION chosen based on the heuristic knowledge. The rules

are formed based on the heuristic knowledge of
In recent years, there has been significant develop- the required waiting time by manually collecting
ment in the use of automation while designing traf- data at different times of the day at Dunlop More,
fic lighting systems. Automation of the traffic lights South of 24 parganas. The manually collected data
has been instrumental in reducing the fuel wastage is shown in Table 1. The output has a range of 0 to
and smooth running of the traffic. Various soft com-
puting techniques have come to the fore where the
automation of the traffic lights have been concerned Table 1. Manually collected raw traffic data.
(Tahilyani, Darbari & Shukla 2013). In this proposed
work, fuzzy logic along with Arduino micro-control- Average number
ler has been used to design and develop a smart traf- of vehicles per 2 Waiting time
Time of the day minutes in seconds
fic lighting system for a particular road intersection.
12 Midnight–6 AM 8 25
6 AM–8 AM 20 40
2 SMART TRAFFIC LIGHTING 8 AM–11 AM 42 70
11 AM–4PM 34 50
Smart traffic lighting system differs from the tradi- 4PM–8PM 50 75
tional traffic lighting system, which is a combination 8PM–12 Midnight 25 50
of advanced signaling devices positioned at pedes-
trian crossings, road intersections and other places,
to ascertain smooth movement of traffic. Our pro-
posed system has combined the existing technology
with fuzzy logic inference system to create a traffic
light system that ascertains smooth moving of traf-
fic and saving of fuel.

3 PREDICTION OF WAITING
TIME USING FUZZY LOGIC
INFERENCE SYSTEM

The designed fuzzy logic inference system is a

2-input (Road Condition and number of vehicles),
1-Output (Waiting time) and 9 Rule-Based sys-
tem. The value of “Road condition” is kept in the
range of 0 to 1, the value of the number of vehi-
cles is kept between 0 and 100. These values are Figure 1. Overview of the fuzzification process.

25

LAHIRI_Book.indb 25 3/7/2016 10:53:14 AM

 100 seconds. The developed Rule-Base is based on
the Mamdani type interface which is a collection
of the IF-THEN rules. The defuzzyfication tech-
nique is used in the centroid method. The overview
of the fuzzification process is shown in Figure 1.
The designed FIS editor window and the designed
Rule-Base are shown in Figure 2 and Figure 3,
respectively.
Figure 2. FIS editor window.
Figure 3. Rule editor window.
26
LAHIRI_Book.indb 26
4 DEVELOPMENT OF AUTOMATIC
TRAFFIC LIGHT USING ARDUINO
MICRO-CONTROLLER KIT
After the fuzzy logic inference system has predicted
the waiting time, the hardware for the proposed
automatic traffic lighting system was developed
using Arduino Micro-Controller Kit. The devel-
3/7/2016 10:53:14 AM
 oped hardware model has taken into consideration
four traffic light units viz. Unit 1, Unit 2, Unit 3, and
Unit 4. Unit 1 and Unit 2 have the same light pat-
tern at any particular time as they have been placed
on the opposite crosswise intersections while Unit
3 and Unit 4 have the same light patterns between
themselves but opposite light pattern with respect
to Unit 1 and Unit 2 and have been placed on the
remaining two crosswise intersections as shown in
Figure 4. In the proposed work, a slight modifica-
Figure 4. Position of placement of traffic lights.
Figure 5. Predicted waiting time when road condition is 0.7 and number of vehicles is 50.
27
LAHIRI_Book.indb 27
tion has been done in the conventional traffic light-
ing system, which is that the amber light starts to
blink along with the red and green light 5 seconds
before the end of waiting period and free move-
ment period so as to indicate the driver to get ready
to either start the engine or to slow down, respec-
tively. This modification prevents unnecessary fuel
usage during the waiting period and the accident
prevention during the free movement period.
5 RESULTS OBTAINED
The fuzzy logic inference system predicts the wait-
ing time for the vehicles satisfactorily as is shown
in Table 2. One of the results of the predicted wait-
ing time by the designed Fuzzy Logic Inference
System is shown in Figure 5. The Road condition
for a particular location is constant for a consid-
erable time period so it has been taken as a con-
stant during the waiting time prediction and the
designed Fuzzy Logic Inference System that pre-
dicts the waiting time based on the number of vehi-
cles for a particular road.
The developed hardware model works satisfac-
torily for a single LED as a single traffic light. The
developed hardware model in the working condi-
tion is shown in Figure 6. Due to unavailability
of the amber colored LED, White LED has been
used in place of Amber. The signal phase and cycle
length for each light of the smart traffic lighting
system is given in Table 3.
3/7/2016 10:53:17 AM
 Table 2. Predicted waiting time vs. observed waiting
time.

Waiting time Waiting time

Average number predicted by fuzzy observed
of vehicles per logic inference manually
2 minutes system (seconds) (seconds)

8 24 25
20 40 40
34 45 50
42 64 70
50 70 75
25 48 50

Figure 6. Smart traffic light in operation.

Table 3. Signal phase and cycle length of each light at any one unit.

Cycle length

Average Unit 1 and Unit 2 Unit 3 and Unit 4

number of Total
vehicles per Amber Amber cycle
Time 2 minutes Red Green (blinks) Red Green (blinks) length

12 Midnight–6 am 08 OFF OFF Blinks OFF OFF Blinks Not

Applicable
6 am–8 am 20 OFF 0 to 40 secs 35 to 40 secs 0 to 40 secs OFF 35 to 40 secs 40 secs
8 am–11 am 42 OFF 0 to 64 secs 59 to 64 secs 0 to 64 secs OFF 59 to 64 secs 64 secs
11am–4 pm 34 OFF 0 to 45 secs 40 to 45 secs 0 to 45 secs OFF 40 to 45 secs 45 s
4 pm–8 pm 50 OFF 0 to 70 secs 65 to 70 secs 0 to 70 secs OFF 65 to 70 secs 70 s
8 pm–12 midnight 25 OFF 0 to 48 secs 43 to 48 secs 0 to 48 secs OFF 43 to 48 secs 48 s

6 CONCLUSION model can be further developed to a drive having

Both the designed fuzzy logic waiting time predic-
tor and the developed hardware traffic light model
work satisfactorily for a particular considered case.
However, more than one traffic lighting system has
been positioned at different intersections, and can
also be controlled simultaneously. The modifica-
tion made in the lighting pattern helps to save fuel
and prevent accidents.
7 FUTURE SCOPE OF THE WORK
The interfacing between the designed Fuzzy Logic
Waiting time predictor system and the developed
hardware model can be done to make a coherent
system. The Fuzzy Rule base and membership
functions can be further modified. The hardware
more number of LEDs.
REFERENCES
Ross T.J. (2008), “Fuzzy Logic with Engineering Applica-
tions” 2nd Edition, John Wiley
Wen W. (2008), “A dynamic and automatic traffic light
control expert system for solving the road congestion
problem”, Expert Systems with Applications, Volume
34, Issue 4, pp 2370–2381.
Tahilyani S., Darbari M. & Shukla P.K. (2013), “Soft
Computing Approaches in Traffic Control Systems:
A Review”, AASRI Conference on Intelligent Systems
and Control, Volume 4, pp 206–211.
Mehan S., Sharma V. (2011), “Development of traffic
light control system based on fuzzy logic”, ACAI’11
Proceedings of the International Conference on
Advances in Computing and Artificial Intelligence,
pp 162–165.

28

LAHIRI_Book.indb 28 3/7/2016 10:53:19 AM

Another random document with
no related content on Scribd:
—— Priory, 5, 6, 8, 9, 11, 16, 18, 20, 30, 58, 62, 64, 66, 67, 68,
70, 71, 107, 116, 118–21, 130, 131, 201
in Valor Ecclesiasticus, 119–20, 179
Dissolution, 138, 142, 144, 145, 147, 148, 203
Pensions, 195
See Priors Fort and William Smith
Stoneleigh, 12
Stowe, 68, 108, 117
Stratford Priory (Essex), 95
Stretaye, Edmund, 168, 223
Strete, Richard, Archbishop of Salop (and Derby), 28, 29, 30,
33, 34, 35, 36, 37, 38, 44, 45, 46, 128, 161, 198, 252
Stretton, 77
—— Bishop of Lichfield, 27, 32
Stubbs, Bishop, quoted 6, 50 note
“Submission of the Clergy,” 43
Succession, Act and Oath of, 47, 52
Sudbury, 128
—— John, Abbot of Burton, 87, 88, 89
Suffolk, Charles Brandon, Duke of, 6, 93, 210
Sutcote, Mr., 209
Sutton, 123, 124
—— Richard, 107, 203, 204
—— William, 191
“Supreme Head,” 42, 48, 53, 146, 219, 220
Swinscoe, 110, 111
Swynneshed, 116
Swynneston, 120
Swythamley, 193
Symon, William, 191
Symson, Simson, Christopher, 172, 190, 232

Tachbrook, 39
Talbot, Sir John, 54, 55
Tamworth, 24, 62, 63
Tanneries, 131
Taverner Margery, 88
—— Nicholas, 88
Templars, Knights, 15, 19, 28
Tentisworth, 103, 104
Teyte, Nicholas, 90
Thomas, Prior of Trentham, 122
Thoreby, 103
Thornley, 102
Thornton, John, 168, 196, 222, 233
Thorpe (Lincs.), 69
Tickford, 26
Tipton, 23
Tithes, 52, 67, 68, 74, 79, 97, 99, 100, 105, 106, 107, 108, 110,
111, 113, 114, 117, 120, 121, 123, 126, 128, 135, 149, 177,
198, 206, 210
Tittensor, 121
Tokeby, 68, 97, 98, 99
Tong, 93
Torcea, 81
Torksey, 107
Torner or Turner, Richard, 117, 182, 194, 204
Torrington, Parva, 50
Totmonslow, 98
Traford, William, 193
Trefall, 105
Trentham, 68, 122, 123, 124, 130, 193
—— Priory, 6, 9, 10, 11, 18, 30, 59, 62, 64, 66, 67, 68, 70, 71,
107, 121–24, 130, 197, 202
in Valor Ecclesiasticus, 122–4, 179
Dissolution, 138, 145, 193, 203, 210
Pensions, 189, 195
See Priors Bradwall, Dulverne, Lavynden, and Thomas
Trent, River, 77, 81, 87, 136
Treour, John le, 76
Trinity College, Oxford, 140
Trusley, 98, 100
Trysull, 55, 61, 63, 106
Tutbury, 127, 128, 195
—— Castle, 9, 124, 202
—— Priory, 9, 16, 18, 21, 30, 60, 62, 63, 64, 67, 68, 71, 124–9,
130, 131, 197, 207
in Valor Ecclesiasticus, 125–8, 179
Dissolution, 138, 145, 167, 169, 199, 203
Pensions, 190, 191, 195
See Prior Arthur Meverell
Twigg, Richard, 122
Tybbes, Thomas, 50
Tylynton, 154
Tyso, 68, 120, 121

Uttoxeter, 98

Vale Royal, 205

Valor Ecclesiasticus, 55–71, 73, 74, Chap. vi, 133, 138, 139,
178, 179, 186, 187, 191, 198, 203, 204, 206, 207, 211
Verduns, 13, 95
Vernam, George, 168, 223
Vernon, Henry, 120, 123
—— John, 25, 54
—— 93
Villani, 85
Vincent, Robert, 113
Voysey, Bishop of Exeter, 26

Wales, 156
Walford, 112, 113
Walkeden, Geoffrey, 147
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Wall Grange, 124
Walton, 5, 98, 116, 120, 121
Warde, Richard, 154, 164, 165
Warham, Archbishop, 26
Warton, John de, 101
Waterfall, 68, 110, 111
Watteley More, 112, 114
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Webley, John, Prior of Dudley, 104
Wednesbury, 23
Welbeck Abbey, 205
Wenlock Priory, 11, 104, 139, 165, 205
Wernell, 23
West Broughton, 127
—— Bromwich, 23
Westminster Abbey, 9, 83, 193
—— Abbot of, 44, 47, 48, 74, 83
and see Boston, William
Westmoreland, 7
—— Earl of, 141
Weston, 58, 68, 77, 115, 117, 120
Wetton, 127, 128, 195
—— William, 127
Wetwode, Richard, 151, 152, 165
Whalley, Richard, 119
Whitels, 98
“White Ship,” 11
Whitgreve, 113, 116
Whitmere, 77
Whitmore, Adam, 101
—— Richard, Abbot of Dieulacres, 100
Whitney, Humfry, 103, 173, 194, 195, 204, 242
—— John, 104, 173, 174 and note, 204, 242
—— Mary and Nicholas, 194 (cf. 193 note, 243
—— Thomas, Abbot of Dieulacres, 102, 104, 148, 173, 190,
193, 196, 204, 239
Whittington, 24
Whytgreve, Robert, 164, 247, 249
Whytteworth, Robert, 197
Whytwell, Whyttel, Whyttewell, Whittall, Edward, 117, 204, 235
Whytwell, Whyttel, Whyttwell, Whittall Katherine, 204
——, —— Richard, Prior of Stafford, 115, 145, 161, 172, 190,
204, 232, 235
——, —— Richard, 117, 148, 204, 258
Wico Malbano, 116
Wilkyns, Edward, Abbot of Hulton, 108, 145, 195, 196
Williams, John, 279 and note
Willingham, 107, 109
Wilmslow, 193
Wilton, 205
Winchester, Bishop of, 88
Windsor, 26
Wistowe, John, 99
Withington, 86, 90
Wodcoke, Ralf, 127
Wodeyton (Wood Eyton), 113
Wolsey, Cardinal, 20, 22, 23, 24, 25, 27, 28, 29, 42, 54, 55, 140
Wolverhampton, 164
Womborne, 23
Wood, Friar, 164
Woodford, 68, 104, 109, 110
Woodhouse, Wydowes, 93, 228
Woods, 128, 129, 130
Wool Trade, 13, 17, 81, 95, 96, 100, 106
Wootton, Wotton, 31, 120, 127
Worcester Priory, 83, 87, 176
—— College, 87
—— Diocese, 105
Wriothesley, Sir Thomas (afterwards Earl of Southampton), 22
Wrottesley, Walter, 54, 55, 59, 62, 105
Wulphade, St., 120
Wycche, 194
Wyfford, 24
Wykeham, Bishop of Winchester, 19
Wyllot, Thomas, 127
Wymondham, 68, 128
Wyrley, Marke, 166, 252
Wyttemore, 124

Yatehouses, 103
York, 28, 136
—— Archbishop of, 136
Yorkshire, 7
 THE END

Printed by Sir Isaac Pitman & Sons, Ltd., Bath.

Sketch Map of STAFFORDSHIRE to Illustrate the Dissolution of the
Monasteries
 FOOTNOTES:
[1] Froude’s History of England.
[2] Seventeen Lectures (1887), p. 289.
[3] See below, Chap. iv.
[4] These figures, omitting shillings and pence, are from Valor
Ecclesiasticus.
[5] Valor Ecclesiasticus, iii, p. 146, 148.
[6] The only other exception is said to be Beaulieu.
[7] Pleas of the Forest, 1286. (Salt Collections, V, Pt. I, p. 162;
VIII, p. 177.)
[8] Some very interesting examples of corrodies granted by
Staffordshire monasteries are given in Monasticism in
Staffordshire, p. 157–160.
[9] Dieulacres Chartulary, No. 99.
[10] Plea Rolls, Henry III (in Salt Collections, VI, Pt. I, p. 293).
[11] Letters and Papers, Henry VIII, v, 1529.
[12] Cal. Pat. Rolls, Henry VI, Vol. II, 1429–36.
[13] Plea Rolls, 6 Edw. IV (Salt Collections n.s. IV).
[14] Cal. Pat. Rolls, Edw. I, 1281–92, p. 25.
[15] Cf. the election of Edie to Burton Abbey (Chap. iv infra)
and of Meverell to Tutbury Priory (Chap. vi infra); and Cranmer’s
request for the appointment of Gorton to Worcester (Chap. v
infra).
[16] Letters and Papers, Henry VIII, v, 1529.
[17] Letters and Papers, Henry VIII, i, 1235, 1360.
[18] Ibid., iv, Part I, 650.
[19] Plea Rolls, Henry III (Salt Collections, IV).
[20] Letters and Papers, Henry VIII, iv, Part I, 1137.
[21] Ibid., iv, Part II, 3536, 3538.
[22] Ibid., iv, Part I, 649, 697, 1913.
 [23] Staffordshire Antiquaries usually add Blithbury, being
misled by the similarity of name to Blythburgh, an Austin Priory in
Suffolk which was one of those suppressed by Wolsey.
[24] Letters and Papers, Henry VIII, iv, Part I, 1964.
[25] Ibid., 2217, 2024.
[26] Ibid., iv. Part II, 3537–8.
[27] Letters and Papers, Henry VIII, iv, Part II, 3190, 4275.
[28] Ibid., iv, Part III, 6516, 6222.
[29] Letters and Papers, Henry VIII, iv, Part III, 6788.
[30] Bishop Norbury’s Register, p. 28.
[31] Bishop Stretton’s (2nd) Register, sub ann.
[32] Letters and Papers, Henry VIII, iv, Part I, 2193; Part II,
2969. Clayborough was one of the King’s Counsel employed in
the “Divorce” proceedings at Dunstable in May, 1533.
[33] Ibid., Part II, 3390.
[34] Letters and Papers, Henry VIII, vi, 389.
[35] Wright’s Letters, p. 127. (“Glaston” is a misprint for
“Ellaston.”)
[36] Letters and Papers, v, 277.
[37] Letters and Papers, v, 1234.
[38] Cf. supra, p. 24; he became Sub-Treasurer and Receiver-
General in Ireland.
[39] Letters and Papers, v, 1456.
[40] Ibid., vi, 389.
[41] Letters and Papers, vi, 645.
[42] Valor Ecclesiasticus, iii, 131.
[43] e.g., in 1608 (State Papers, Domestic, James I, 1603–10,
p. 407) and 1680 (Salt Collections V, 188).
[44] Cf. Dict. Nat. Biog., xxxii, 373.
[45] Letters and Papers, v, 879; cf. 150 (where the date should
be 1532).
[46] Letters and Papers, Henry VIII, vi, 119; cf. iv, Part II, 2700.
[47] Ibid., vi, 417.
 [48] Wright’s Letters, p. 114.
[49] Letters and Papers, vi, 700.
[50] Sir Piers Dutton was Sheriff of Chester (Letters and
Papers, x, 618).
[51] Ibid., vi, 714. (Vols. V and VI give a considerable number
of instances of interference with elections at this time.)
[52] Letters and Papers, vi, 1060; vii, 587 (19).
[53] These particulars are from Stubbs (Registrum Sacrum
Anglicanum, 146, and Monasticon, v, 377 note).
[54] P.R.O., State Papers, Henry VIII, Fol. Vol. R. and S., 165.
[Attached to this document is a paper containing a longer list
of monasteries covering three sides, of which those above-named
fill the first side. Some Welsh houses are included.]
[55] Cf. Letters and Papers, Henry VIII, vi, 590.
[56] 26 Henry VIII, c. 3.
[57] The Possessions of the Knights of St. John of Jerusalem
were taken by the Act 32 Henry VIII, c. xxiv.
[58] Letters and Papers, viii, 149 (75).
[59] Ibid., xiv, Part I, p. 289.
[60] Cf. also Arts. 10–13 of the Act.
[61] Valor Ecclesiasticus, iii, p. 99.
[62] Valor Ecclesiasticus, temp. Hen. VIII, auctoritate regia
institutus (6 vols., 1810–34). The Staffordshire returns come in
Vol. III.
[63] Letters and Papers, ix, 354.
[64] Cf. infra, Ch. v.
[65] Vol. III, pp. 99–152.
[69] His will is printed in the Journal of the Derbyshire
Archæological and Natural History Society, Vol. VII (1885), pp.
226–233.
[70] Annales de Burton are printed in Annales Monastici, Vol. I
(1864), edited by H. R. Luard, M.A.
[71] Valor Ecclesiasticus, iii, 144.
 [72] Valor Ecclesiasticus, iii, 146.
[73] Cal. Pat. Rolls, Edw. III, 1313–18, pp. 428, 447, 564;
1318–23, pp. 116, 694.
[74] Cal. Pat. Rolls, Edw. III, 1307–13, pp. 331, 335, 343.
[77] Cunningham, Growth of English Industry and Commerce,
i, 625–632.
[78] A Description of Leicestershire, by William Burton (1622),
p. 119.
[79] Cf. supra, p. 47.
[80] The tradition is recorded by J. Bacon in the Preface to his
edition (1786) of Ecton’s Thesaurus rerum Ecclesiasticarum, the
first edition of which was printed in 1711. Ecton and Bacon were
both officials of the Office of First-Fruits and Tenths.
[81] In 1535, Cranmer wrote to Cromwell: “I understand the
Priory of Worcester is to be shortly void. If so, be good to ... Dn.
Richard Gorton, B.D., of the house of Burton-on-Trent.”—Letters
and Papers, Henry VIII, ix, 971.)
[82] Valor Ecclesiasticus, 126.
[83] Ibid., 163.
[84] Ibid., 149.
[85] Valor Ecclesiasticus, iii, 226.
[86] Cal. Pat. Rolls, Henry IV, 1405–8.
[87] “Early Chancery Proceedings,” Bundle 6, No. 50 (Salt
Collections, N.S., vii, 244).
[88] Vol. III, 103.
[89] In the twelfth century Margery, daughter of Sir Ralf de
Coven, endowed the Nunnery with this annual rent in Horsebrook.
(Original Deed at Chillington, printed in Salt Collections, iii, p.
211.)
[90] Cf. Appendix i.
[91] Valor Ecclesiasticus, iii, 125.
[92] Glaston is obviously a misprint for “Ellaston,” a mistake
easily made. Cf. supra, p. 34.
[93] Cf. supra, p. 50.
 [94] Cal. Pat. Rolls, Rich. II, 1377–81, pp. 362, 516.
[95] Salt Collections, iii, 163, 182; N.S., ix, 298.
[96] Valor Ecclesiasticus, iii, 123.
[97] Valor Ecclesiasticus, iii, 104 (cf. Letters and Papers, viii,
191).
[98] Letters and Papers, Henry VIII, xvi, 678.
[99] Valor Ecclesiasticus, iii, 107.
[100] Cf. infra Ch. vii.
[101] Valor Ecclesiasticus, iii, 124.
[102] Valor Ecclesiasticus, iii, 114.
[103] Exchequer Augmentation Office: Miscellaneous Books,
Vol. 400, p. 108–9.
[104] Salt Collections, viii, 195, 197.
[105] Valor Ecclesiasticus, iii, 110.
[107] Cf. infra Appendix iv.
[108] Cf. infra, p. 145.
[109] Salt Collections, N.S., iv (13 Edw. IV).
[110] Valor Ecclesiasticus, iii, 113.
[111] Salt Collections, xi, 322.
[112] Cal. Pat. Rolls, Edw. I, 1292–1301, p. 253 (cf. pp. 248,
252); Pat. Rolls, 15 Edw. II (Salt Collections, xi, 299).
[113] Valor Ecclesiasticus, iii, 108.
[114] De Banco Roll, Hilary 10–11, Edw. III (Salt Collections,
xi, 72).
[115] Supra, p. 21.
[116] Letters and Papers, Henry VIII, viii, 56.
[117] Ibid., viii, 682.
[118] Wright’s Letters, p. 114.
[119] Valor Ecclesiasticus, iii, 142.
[120] Valor Ecclesiasticus, iii, 57.
[121] Wright’s Letters, 156.
 [122] Wright’s Letters, 157.
[123] Wright’s Letters, 93.
[124] Ibid., 95.
[125] Letters and Papers, ix, 517.
[126] Ibid., x, 364.
[127] Ibid., x, 1088.
[128] Letters and Papers, Henry VIII, Vol. X, 1238. [Gairdner,
English Church, does not include Tutbury in his list on p. 420.]
[129] Cf. Dict. Nat. Biog., xlviij, 123.
[130] Ibid., xlvj, 135.
[131] Ibid., ix, 363.
[132] Letters and Papers, x, 613.
[133] Letters and Papers, x, 741.
[134] Ibid., 749.
[135] Letters and Papers, x, 886.
[136] Ibid., 754.
[137] Ibid., 1178.
[138] Letters and Papers, x, 324.
[139] Letters and Papers, xii, Pt. II, 638.
[140] Ibid., xii, Pt. I, 1104; Pt. II, 1008(1), 456, 411 (2) and (12);
xiii. Pt. II, 456, 364, 343, 370.
[141] Ibid., xii, Pt. I, 819.
[142] Letters and Papers, xii, Pt. II, 531.
[143] Letters and Papers, xiii, Pt. I, 456.
[144] Cf. infra, p. 186.
[145] Cf. infra, pp. 175, 227, 233, 240, 272–6.
[146] Letters and Papers, xii, Pt. II, 611.
[147] Letters and Papers, xiii, Pt. I, 1520.
[148] Public Record Office, State Papers, Dom., Henry VIII,
Vol. 120, No. 143.
[149] Letters and Papers, xiii, Pt. II, 44, 56, 61.
 [150] Ibid., 170.
[151] Letters and Papers, xiii, Pt. II, 49.
[152] Ibid., 50.
[153] Ibid., 44.
[154] Letters and Papers, xiii, Pt. II, 79.
[155] Ibid., 56 (Aug. 9, 1538).
[156] Letters and Papers, xiii, Pt. II, 56.
[157] Ibid.
[158] Letters and Papers, xiii, Pt. II, 61.
[159] Wright’s Letters, 203, 204.
[160] Burnet, iv, 490.
[161] Letters and Papers, xiii, Pt. II, 281.
[162] Wright’s Letters, 143.
[163] Letters and Papers, xiii, Pt. I, 317.
[164] Ibid., Pt. II, 164.
[165] Ibid., 1051.
[166] Letters and Papers, xiii, Pt. II, 652.
[167] Ibid., 736.
[168] Ibid., 1143.
[169] Letters and Papers, xiii, Pt. II, 168; Wright’s Letters, 267,
270.
[170] Wright’s Letters, 282.
[171] Wright’s Letters, 267.
[172] Wright’s letters, 278.
[173] Letters and Papers, xiii, Pt. II, 343.
[174] Public Record Office, Exchequer Augmentation Office,
No. 247.
[175] Ibid., No. 206 (Letters and Papers, xiii, Pt. II, 364).
[176] Public Record Office, Exchequer Augmentation Office,
No. 66 (Ibid., 370).
 [177] Public Record Office, Ministers’ Accounts, Divers
Counties, No. 230, Bundle 61 (Accounts of John Scudamore,
membrane 6): “Nuper Monasterii de Roucester—de precio trium
campanorum nuper Monasterii de Roucester remanentium in
Campanilia Ecclesiae parochialis ibidem non de eo quod
parochiani de Roucester predicta Clamant easdem campanas sibi
et parochianis ibidem pertinere et remanere super clamentium
suum quousque determinentur coram Cancellario et Consilio
Curiae Augmentationis etc. Si dictum clamentium verum sit necne
quia easdem campanas occupabuntur et usi fuerunt tam per
nuper Religiosos quam eciam per parochianos de Rocester
predicta pulsandas ad divina servicia et aliter. Summa nulla.”
[178] Exchequer Augmentation Office, Miscellaneous Books,
Vol. 172.
[179] Appendix, iii, iv, v.
[180] Letters and Papers, xiii, Pt. II, 586.
[181] Ibid., 628.
[182] Letters and Papers, xiii, Pt. II, 627.
[183] Ibid., 634 (Exchequer Augmentation Office, 220).
[184] See the Inventory in Appendix v.
[185] Letters and Papers, xiii, Pt. II, 656.
[186] Sleigh’s Leek, p. 64. “Cole’s MS., 26, 246, contains the
Deposition of John Whitney, late Chamberleyne to the last Abbot
of Dieulacresse, taken 8 Jany., 7o Elizh. Hereby it appeared that 4
or 5 days after the suppression of that Abbey, several Blanks,
having the Covent-sealle, were seene by the Deponent, the Abbot
and others being privy. Upon these blanks Wm. Damport, the
Abbot’s Scribe, wrote Leases, with Ante-Dates: and among the
rest one was the Lease and Reversion of the Mannour of
Poultone.”
[187] Wright’s Letters 282.
[188] Ibid. 286.
[189] Ibid. 206.
[190] Letters and Papers, xiii, Pt. II, 1233.
[191] Ibid., xvi, 745.
[192] Ibid., ix, 971; cf. supra, p. 83 n.
 [193] Ibid., xiii, Pt. II, 1051.
[194] Ibid., 1052.
[195] Cf. Appendix xii, xiii, where many interesting details are
given of the journey and the whole business.
[196] Cf. Appendix v.
[197] Cf. Appendix iii.
[198] Cf. Appendix v.
[199] Cf. Appendix iv.
[200] Cf. Appendix vi, vii, viii.
[201] History of England, i, 41 n.
[202] Cf. Appendix v, vi.
[203] Cf. supra, pp. 154, 155.
[204] Supra, p. 39.
[205] Cf. Appendix iii.
[206] Cf. Appendix iv.
[207] Cf. Appendix v.
[208] Monasticon, v, 383.
[209] Cf. supra, p. 164.
[210] Bazin’s novel, translated into English under the title of
The Nun, describes the suppression of a French nunnery in
recent years, and the after-history of the sisters. It is very
instructive.
[211] Wright’s Letters, 243.
[212] Sleigh’s Leek, 140.
[213] Ibid., 64. He left his chalice of silver-gilt to his “servant
and nephew Nicholas Whitney,” stipulating that if the Abbey were
ever restored the chalice should be returned to it.
[214] His rent-roll of lands which he continued to manage,
dated Oct. 6th, 34 Hen. viij, is in the William Salt Library at
Stafford (Box 145).
[215] Letters and Papers, Henry VIII, xvi, 617.
[216] Ibid., App. i.
[217] Letters and Papers, Henry VIII, xvi, 866.
 [218] Ibid., 324.
[219] Letters and Papers, Henry VIII, xvi, 745, 425, 258.
[220] Letters and Papers, Henry VIII, xiii, Pt. ii, 1220.
[221] Cf. supra, p. 34.
[222] Valor Ecclesiasticus, iii, 128 (printed “Glaston”).
[223] Printed in Annales Monastici, Vol. I (1864). Another copy
is in the Library of the Dean and Chapter of Lichfield.
[224] Addit. MS., 23, 944. See App. xiv.
[225] British Museum, Royal MS., 15, B, iv.
[226] Cottonian MS., Vespasian E., xxiv, cxv.
[227] Wright’s Letters, p. 71. Strype, Vol. I, pt. i, p. 324.
[228] Wright’s Letters, 291.
[229] Letters and Papers, xii, Pt. I, 767: Dr. Pole to Bp. Lee
(Mar. 29th, 1537), “I know none within your diocese of seditious
opinions touching the bishop of Rome or favourable to the late
insurrections.”
[230] A kind of figured linen.
[231] i.e., cooling pans.
[232]? Cyfus or Cyphus = a drinking-cup.
[233] i.e., flagons.
[234] i.e., spit.
[235] i.e., a small handmill for grinding mustard.
[236] i.e., a basket or other vessel for clearing away the
remains of a meal.
[237] i.e., iron.
[238] i.e., ornamented with work illustrating the Nativity of
Christ.
[239] i.e., lavatory
[240] i.e., saucepan.
[241] i.e., an iron hook for hanging a pot over the fire.
[242] i.e., coolers.
[243] i.e., cistern.
 [244] i.e., seven score and nineteen = 159.
[245] A fother = 19½ cwt.
[246] i.e., vats.
[247] i.e., sanctus bell.
[248] beer coppers (wort = new unfermented beer).
[249] i.e., time allowed, respite, credit; cf. Chaucer, The
Franklin’s Tale, l. 847, “bysecheth ... to graunte him dayes of the
remenaunt.”
[250] i.e., dormitory.
[251] “Walter Charnels” was Bailiff of the town of Burton (cf.
supra, p. 90).
[252] i.e., cushions.
[253] i.e., treasurer.
[254] Sir William Paget was Clerk of the Signet and Privy
Councillor, afterwards Baron Paget of Beaudesert (cf. Dict. Natl.
Biog., xliii, 60).
[255] Public Record Office. Particulars for Grants, 10 Jan., 37
Hen. viii. Sir William Paget.
Request to exchange (1) [lined through]. Lands appointed
unto the King by Sir Will. Paget, viz., farm of the manor or late
hospital of Kepeyere (Durham); (2) [lined through] in exchange for
farm of the manor of Nantwich; farm of the demesne of Burton-
on-Trent with site of the late college, and the demesne lands
pertaining.
[Kepier is described in the Aug. Off. Misc. Book, 400, as being
in the county of York: it is in Easington Ward, co. Durham. The
Hospital there was surrendered and granted to Sir William Paget
36 Hen. viij.]
[256] Cf. supra, pp. 158, 168.
[257] William Scudamore was John Scudamore’s son. He
acted as Clerk to Robert Burgoyn, one of the Commissioners for
Northamptonshire, etc. (cf. Wright’s Letters, p. 281).
[258] i.e., never.
[259] John Lambert had held this office under the Abbey at the
time of Valor Ecclesiasticus (cf. supra, p. 90).