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Vnq5027ak e
Vnq5027ak e
Features
Max supply voltage VCC 41V
Operating voltage range VCC 4.5 to 36 V
Max on-state resistance (per ch.) RON 27 mΩ PowerSSO-24
Contents
2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.4 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.1 GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 20
3.1.1 Solution 1: resistor in the ground line (RGND only) . . . . . . . . . . . . . . . . 20
3.1.2 Solution 2: a diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . 21
3.2 Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.3 MCU I/Os protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.4 Maximum demagnetization energy (VCC = 13.5V) . . . . . . . . . . . . . . . . . 23
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
List of tables
List of figures
VCC
VCC UNDERVOLTAGE
CLAMP OUTPUT1
PwCLAMP 1
GND DRIVER 1 CURRENT
SENSE1
VCC
ILIM 1 INPUT2
INPUT1 Control & Protection
LOGIC VDSLIM 1 CURRENT Equivalent to OUTPUT2
SENSE2 channel1
INPUT2 CURRENT
OVERTEMP. 1 SENSE2
VCC
INPUT3 IOUT1 INPUT3
Control & Protection
K1
INPUT4 CURRENT Equivalent to
OUTPUT3
SENSE3 channel1
CURRENT
VCC SENSE3
INPUT4
PwrLIM 1 Control & Protection
CURRENT Equivalent to
OUTPUT4
CS_DIS SENSE4 channel1
CURRENT
SENSE4
CS_DIS Active high CMOS compatible pin to disable the current sense pin.
VCC OUTPUT1
GND OUTPUT1
INPUT1 OUTPUT1
CURRENT SENSE1 OUTPUT2
INPUT2 OUTPUT2
CURRENT SENSE2 OUTPUT2
INPUT3 OUTPUT3
CURRENT SENSE3 OUTPUT3
INPUT4 OUTPUT3
CURRENT SENSE4 OUTPUT4
CS_DIS. OUTPUT4
VCC OUTPUT4
TAB = VCC
Floating N.R.(1) X X X X
2 Electrical specifications
IS
VCC VFn VCC
ICSD IOUTn
OUTPUTn
CS_DIS VOUTn
VCSD
IINn ISENSEn
INPUTn CURRENT
VINn SENSEn VSENSEn
GND
IGND
VCC-41 V
VCSENSE Current Sense maximum voltage
+VCC V
Maximum switching energy (single pulse)
EMAX 140 mJ
(L=0.8 mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IOUT = IlimL(Typ.))
Electrostatic discharge
(human body model: R=1.5KΩ; C=100pF)
– Input 4000 V
VESD – Current sense 2000 V
– CS_DIS 4000 V
– Output 5000 V
– VCC 5000 V
VESD Charge device model (CDM-AEC-Q100-011) 750 V
Tj Junction operating temperature - 40 to 150 °C
Tstg Storage temperature - 55 to 150 °C
Rthj-case Thermal resistance junction-case (with one channel ON) 1.35 °C/W
VIN=VOUT=0V; VCC=13V;
Tj=25°C 0 0.01 3
IL(off) Off-state output current(2) µA
VIN=VOUT=0V; VCC=13V;
Tj=125°C 0 5
Output - VCC diode
VF -IOUT=3A; Tj=150°C 0.7 V
voltage(2)
1. PowerMOS leakage included.
2. For each channel.
IOUT= 0.5A;
K0 IOUT/ISENSE VSENSE= 0.5 V; VCSD=0 V; 1680 2910 4120
Tj= -40°C...150°C
IOUT= 0.5A; VSENSE= 0.5V;
dK0/K0(1) Current sense ratio drift VCSD= 0V; -12 12 %
TJ= -40 °C to 150 °C
IOUT= 2A;
VSENSE= 4 V; VCSD=0 V;
K1 IOUT/ISENSE
Tj= -40°C...150°C 2050 2700 3410
Tj= 25°C...150°C 2190 2700 3210
IOUT= 2A; VSENSE= 4V;
dK1/K1(1) Current sense ratio drift VCSD= 0V; -10 10 %
TJ= -40 °C to 150 °C
IOUT= 3A;
VSENSE= 4 V; VCSD=0 V;
K2 IOUT/ISENSE
Tj= -40°C...150°C 2260 2690 3160
Tj= 25°C...150°C 2350 2690 3030
IOUT= 3A; VSENSE= 4V;
dK2/K2(1) Current sense ratio drift VCSD= 0V; -7 7 %
TJ= -40 °C to 150 °C
IOUT= 10A;
VSENSE= 4 V; VCSD= 0 V;
K3 IOUT / ISENSE
Tj= -40°C...150°C 2490 2700 2870
Tj= 25°C...150°C 2590 2700 2800
IOUT= 10A; VSENSE= 4 V;
dK3/K3(1) Current sense ratio drift VCSD= 0V; -4 4 %
TJ= -40 °C to 150 °C
IOUT= 0A; VSENSE= 0V;
VCSD= 5V; VIN= 0V;
Tj= -40°C...150°C 0 1 µA
Table 9. Protection(1)
Symbol Parameter Test conditions Min. Typ. Max. Unit
VCC=13V 29 42 59 A
IlimH DC short circuit current
5V<VCC<36V 59 A
Short circuit current
IlimL VCC=13V; TR<Tj<TTSD 16 A
during thermal cycling
TTSD Shutdown temperature 150 175 200 °C
TR Reset temperature TRS + 1 TRS + 5 °C
Thermal reset of
TRS 135 °C
STATUS
Thermal hysteresis
THYST 7 °C
(TTSD-TR)
Turn-off output voltage
VDEMAG IOUT= 2A; VIN=0; L=6mH VCC-41 VCC-46 VCC-52 V
clamp
Output voltage drop IOUT=0.2A; Tj=-40°C...150°C
VON 25 mV
limitation (see Figure 9.)
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
Figure 5. Delay response time between rising edge of output current and rising
edge of Current Sense (CS enabled)
VIN
ΔtDSENSE2H
IOUT
IOUTMAX
90% IOUTMAX
ISENSE ISENSEMAX
90% ISENSEMAX
VOUT
tWon tWoff
90%
80%
dVOUT/dt(on) dVOUT/dt(off)
tr 10% tf
t
INPUT
td(on) td(off)
4000
3500
max Tj = -40 °C to 150 °C
3000
max Tj = 25 °C to 150 °C
typical value
1500
1000
2 4 6 8 10
IOUT (A)
10
-5
-10
-15
2 3 4 5 6 7 8 9 10
IOUT (A)
L L 0
Normal operation
H H Nominal
L L 0
Overtemperature
H L VSENSEH
L L 0
Undervoltage
H L 0
L L 0
Short circuit to GND
H L 0 if Tj < TTSD
(Rsc ≤ 10 mΩ)
H L VSENSEH if Tj > TTSD
L H 0
Short circuit to VCC
H H < Nominal
Negative output voltage
L L 0
clamp
1. If the VCSD is high, the SENSE output is at a high impedance, its potential depends on leakage currents
and external circuit.
Vcc-Vout
Tj=150oC Tj=25oC
Tj=-40oC
Von
Iout
Von/Ron(T)
1 C C
2a C C
3a C C
3b C C
4 C C
5b (2) C C
1. The above test levels must be considered referred to VCC = 13.5V except for pulse 5b.
2. Valid in case of external load dump clamp: 40V maximum referred to ground.
C All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device are not performed as designed after exposure
E to disturbance and cannot be returned to proper operation without replacing the
device.
900 4,5
Vin=2.1V
800 Off State 4
Vcc=13V
700 3,5
600 3
500 2,5
400 2
300 1,5
200 1
100 0,5
0 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (°C) Tc (°C)
Figure 12. Input clamp voltage Figure 13. Input low level
1,8
7,5 lin=1mA
1,6
1,4
7
1,2
6,5 1
0,8
6
0,6
0,4
5,5
0,2
5 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (°C) Tc (°C)
Figure 14. Input high level Figure 15. Input hysteresis voltage
Vih (V) Vihyst (V)
4 1
0,9
3,5
0,8
3
0,7
2,5
0,6
2 0,5
0,4
1,5
0,3
1
0,2
0,5
0,1
0 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (°C) Tc (°C)
Figure 16. On-state resistance vs Tcase Figure 17. On-state resistance vs VCC
50
80
Iout= 3A Tc=150°C
Vcc=13V
40
60 Tc=125°C
30
Tc=25°C
40
20
Tc=-40°C
20
10
0 0
-50 -25 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40
Tc (°C) Vcc (V)
900
7
Vcc=13V
800
RI=4.3 Ohm
6
700
5 600
4 500
400
3
300
2
200
1
100
0 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (°C) Tc (°C)
550
55
500 Vcc=13V
Vcc=13V
50 450 RI= 4.3 Ohm
400
45
350
40 300
250
35
200
30 150
100
25
50
20 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (°C) Tc (°C)
Figure 22. CS_DIS high level voltage Figure 23. CS_DIS clamp voltage
9
3,5
8 Icsd = 1 mA
3
7
2,5
6
2 5
4
1,5
3
1
2
0,5
1
0 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (°C) Tc (°C)
Vcsdl (V)
3
2,5
1,5
0,5
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
3 Application information
VCC
Rprot CS_DIS
Dld
μC Rprot IINPUT
OUTPUT
RSENSE RGND
VGND DGND
Cext
NORMAL OPERATION
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
UNDERVOLTAGE
VUSDhyst
VCC
VUSD
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
SHORT TO VCC
INPUT
CS_DIS
LOAD VOLTAGE
LOAD CURRENT
SENSE CURRENT
<Nominal <Nominal
OVERLOAD OPERATION
TR TTSD
Tj
TRS
INPUT
CS_DIS
ILIMH
ILIML
LOAD CURRENT
VSENSEH
SENSE CURRENT
100
A
B
10
C
I (A)
1
0,1 1 L (mH) 10 100
VIN, IL
Note: Layout condition of Rth and Zth measurements (PCB: Double layer, Thermal Vias, FR4
area= 77mm x 86mm, PCB thickness=1.6mm, Cu thickness=70µm (front and back side),
Copper areas: from minimum pad lay-out to 8cm2).
Figure 29. Rthj-amb vs PCB copper area in open box free air condition (one channel ON)
RTHj_amb( °C/ W)
55
50
45
40
35
30
0 2 4 6 8 10
PCB Cu heat sink area ( cm^ 2)
Figure 30. PowerSSO-24™ thermal impedance junction ambient single pulse (one channel
on)
ZTH (°C/W)
1000
100 Footprint
2 cm2
8 cm2
10
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
Time (s)
Figure 31. Thermal fitting model of a double channel HSD in PowerSSO-24™ (a)
a. The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded
protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
R3 (°C/W) 6
R4 (°C/W) 7.7
R5 (°C/W) 9 9 8
R6 (°C/W) 28 17 10
C3 (W.s/°C) 0.025
C4 (W.s/°C) 0.75
C5 (W.s/°C) 1 4 9
C6 (W.s/°C) 2.2 5 17
A 2.45
A2 2.15 2.35
a1 0 0.1
b 0.33 0.51
c 0.23 0.32
D 10.10 10.50
E 7.4 7.6
e 0.8
e3 8.8
F 2.3
G 0.1
H 10.1 10.5
h 0.4
k 0° 8°
L 0.55 0.85
O 1.2
Q 0.8
S 2.9
T 3.65
U 1.0
N 10°
X 4.1 4.7
Y 6.5 7.1
Base Q.ty 49
Bulk Q.ty 1225
C Tube length (± 0.5) 532
B
A 3.5
B 13.8
C (± 0.1) 0.6
All dimensions are in mm.
A
Reel dimensions
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width W 24
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 12
Hole Diameter D (± 0.05) 1.55
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.1) 11.5
Compartment Depth K (max) 2.85
Hole Spacing P1 (± 0.1) 2
End
All dimensions are in mm.
Start
Top No components Components No components
cover
tape 500mm min 500mm min
Empty components pockets
saled with cover tape.
6 Revision history
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