RClamp3374N

Low Capacitance RailClamp®

4-Line Surge and ESD Protection
for Ethernet Interfaces
PROTECTION PRODUCTS
Description Features
RailClamp® TVS diodes are specifically designed to • Transient protection for high-speed data lines to
protect sensitive components which are connected IEC 61000-4-2 (ESD) ±30kV (air), ±30kV (contact)
to high-speed data and transmission lines from over IEC 61000-4-4 (EFT) 40A (5/50ns)
voltage caused by ESD (electrostatic discharge), IEC 61000-4-5 (Lightning) 40A (8/20μs)
CDE (cable discharge events), and EFT (electrical fast • Array of surge rated diodes with internal TVS Diode
• Protects up to eight lines
transients).
• Low capacitance for high-speed interfaces
• Low variation in capacitance vs. bias voltage
The unique design incorporates surge rated, low • Low clamping voltage
capacitance steering diodes and a TVS diode in a single • Low operating voltage: 3.3V
package. The RClamp®3374N is designed to replace • Solid-state silicon-avalanche technology
up to two components for board level GbE protection.
Each device is designed to protect two line pairs. Mechanical Characteristics
This is accomplished by routing traces through the
• Package: DFN 3.0 x 2.0 x 0.6mm 10 Lead
device. When connected in this fashion, the device can • Pb-Free, Halogen Free, RoHS/WEEE Compliant
withstand a high level of surge current (40A, tp =8/20us) • Lead Finish: NiPdAu
while maintaining a low loading capacitance of less than • Molding Compound Flammability Rating: UL 94V-0
5pF. The high surge capability means it can be used in • Marking : Marking Code + Date Code
high threat environments in applications such as Gigabit • Packaging : Tape and Reel
Ethernet, telecommunication lines, and LVDS interfaces.
Applications
The RClamp3374N is constructed using Semtech’s • 10/100/1000 Ethernet
proprietary EPD process technology. The EPD process • Central Office Equipment
provides low stand-off voltages with significant • LVDS Interfaces
reductions in leakage current and capacitance over • MagJacks / Integrated Magnetics
silicon avalanche diode processes. It features a true • Notebooks / Desktops / Servers
operating voltage of 3.3 volts for superior protection.
RClamp3374N is in a DFN 3.0 x 2.0 x 0.6mm 10 Lead
package. The leads are finished with lead-free NiPdAu.

Functional Schematic Pin Configuration

Pin 1 Pin 4
Line 1 In Line 3 In

Line 1 In 1 10 Line 1 Out

GND
Pin 10 Pin 7 Line 2 In Line 2 Out
Line 1 Out Line 3 Out
Pin 2 Pin 5
Line 2 In Line 4 In GND GND GND

Line 3 In Line 3 Out

GND
Pin 9 Pin 6
Line 2 Out Line 4 Out Line 4 In 5 6 Line 4 Out
Pin 3, 8
Center tab

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Absolute Maximum Ratings

Rating Symbol Value Units

Peak Pulse Power (tp = 8/20µs) PPK 1000 W
Peak Pulse Current (tp = 8/20µs) IPP 40 A
ESD per IEC 61000-4-2 (Contact) (1)
±30
VESD kV
ESD per IEC 61000-4-2 (Air)(1) ±30
Operating Temperature TOP -40 to +125 °C

Storage Temperature TSTG -55 to +150 °C

Electrical Characteristics (T=25OC unless otherwise specified)

Parameter Symbol Conditions Min. Typ. Max. Units

Reverse Stand-Off Voltage VRWM 3.3 V
Reverse Breakdown Voltage VPT IPT = 2µA 3.5 V
Snapback Voltage VSB ISB = 50mA 2.8 V
T = 25OC 0.5 μA
Reverse Leakage Current IR VRWM = 5V
T = 125OC 1 μA

IPP = 1A 5.5 V
tp = 8/20µs
Clamping Voltage(2) VC IPP =10A 10.5 V
Any I/O to GND
IPP = 25A 18 V

Clamping Voltage(2) (3) VC tp = 8/20µs , Line to Line IPP = 40A 25 V

VR = 0V, f = 1MHz, any I/O Pin to GND 3.6 5 pF
Junction Capacitance(2) CJ
VR = 0V, f = 1MHz, between I/O pins 1.7 pF

Notes:
(1): ESD Gun return path to Ground Reference Plane (GRP)
(2): Guaranteed by design (not production tested)
(3): Ratings with 2 pins connected together per the recommended configuration (i.e. pin 1 connected to pin 10, pin 2 connected to pin 9, pin 4
connected to pin 7, and pin 5 connected to pin 6).

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Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve

120
100
TA = 25OC
100
Peak Pulse Power - PPP (kW)

10 80

% of Rated Power or IPP

60

1 40

20

0.1 DR040514-25-125-150

0.1 1 10 100 1000 0

0 25 50 75 100 125 150
Pulse Duration - tp (µs) Ambient Temperature - TA (OC)

Clamping Voltage vs. Peak Pulse Current Forward Clamping Voltage vs. Peak Pulse Current

25 15
I/O to GND
GND to 1 I/O
I/O to I/O GND to 2 I/O
2 I/O to GND
2 I/O to 2 I/O
20
Clamping Voltage - Vc(V)

Clamping Voltage - Vc(V)

10
15

10
5

Waveform
5
Parameters:
tr = 8µs
td = 20µs
0 0
0 10 20 30 40 50 0 10 20 30 40 50

Peak Pulse Current - Ipp (A) Peak Pulse Current - Ipp (A)

Capacitance vs. Reverse Voltage Typical TLP Characerisitic

5.0 30
I/O to GND TLP
I/O to I/O Parameters:
25 tp = 100ns
4.0 tr = 200ps

20
Capacitance - Cj(pf)

3.0
Current (A)

15

10 Rdyn=0.23 Ohms
2.0

1.0
0

f = 1 MHz
0.0 -5
0 1 2 3 4 0 2 4 6 8 10 12

Reverse Voltage - VR(V) Voltage (V)

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Typical Characteristics (Continued)
Insertion Loss (I/O to GND) Insertion Loss (I/O to I/O)

CH1 S21 LOG 6 dB / REF 0 dB CH1 S21 LOG 6 dB / REF 0 dB

1: - 0.5954 dB 1: - 0.3708 dB
800 MHz 800 MHz

2: - 0.6386 dB 2: - 0.3976 dB
0 dB 900 MHz 0 dB 900 MHz
12 5
12
3

-6 dB 3 5
3: - 1.9606 dB -6 dB 4
3: - 1.3979 dB
4 1.8 GHz 1.8 GHz
-12 dB -12 dB
4: - 4.3959 dB 4: - 3.4436 dB
2.5 GHz 2.5 GHz
-18 dB -18 dB
5: - 5.2975 dB 5: - 4.3385 dB
-24 dB 2.7 GHz -24 dB 2.7 GHz

-30 dB -30 dB

-36 dB -36 dB

-42 dB -42 dB

-48 dB -48 dB
1 10 100 1 3 1 10 100 1 3
MHz MHz MHz GHz GHz MHz MHz MHz GHz GHz

START . 030 MHz STOP 3000. 000000 MHz START . 030 MHz STOP 3000. 000000 MHz

Insertion Loss (2 I/O to GND) Insertion Loss (2 I/O to 2 I/O)

CH1 S21 LOG 6 dB / REF 0 dB CH1 S21 LOG 6 dB / REF 0 dB

1: - 2.3263 dB 1: - 1.1102 dB
800 MHz 800 MHz

2: - 2.5056 dB 2: - 1.1958 dB
0 dB 900 MHz 0 dB 900 MHz
12

-6 dB 12
3: - 5.7891 dB -6 dB 3 5
3: - 3.4256 dB
3 5 1.8 GHz 1.8 GHz
4

-12 dB 4 -12 dB
4: - 9.2386 dB 4: - 6.8820 dB
2.5 GHz 2.5 GHz
-18 dB -18 dB
5: - 10.111 dB 5: - 7.9734 dB
-24 dB 2.7 GHz -24 dB 2.7 GHz

-30 dB -30 dB

-36 dB -36 dB

-42 dB -42 dB

-48 dB -48 dB
1 10 100 1 3 1 10 100 1 3
MHz MHz MHz GHz GHz MHz MHz MHz GHz GHz

START . 030 MHz STOP 3000. 000000 MHz START . 030 MHz STOP 3000. 000000 MHz

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Typical Characteristics (Continued)
Analog Crosstalk (I/O to GND) Analog Crosstalk (I/O to I/O)

CH1 S21 LOG 20dB / REF 0 dB CH1 S21 LOG 20dB / REF 0 dB

0 dB 0 dB

-20 dB -20 dB

-40 dB -40 dB

-60 dB -60 dB

-80 dB -80 dB

-100 dB -100 dB

-120 dB -120 dB

-140 dB -140 dB

-160 dB -160 dB
START . 030 MHz STOP 3000. 000000 MHz START . 030 MHz STOP 3000. 000000 MHz

8kV ESD Clamping (I/O to GND per IEC 61000-4-2)

60

50
Clamping Voltage (V)

40

30

20

10

0
-10 10 30 50 70
Time (ns)

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Application Information
Ethernet Protection
Ethernet ports are exposed to external transient events
in the form of ESD, EFT, lightning, and cable discharge
events (CDE). Test standards that model these events
include IEC 61000-4-2 for ESD, IEC 61000-4-4 for EFT, and
IEC 61000-4-5 and GR-1089 for lightning. Any of these
events can cause catastrophic damage to the PHY IC.
When designing Ethernet protection, the entire system
must be considered. Over-voltage events can be
common mode (with respect to ground) or differential
(line-to-line). An Ethernet port includes interface
magnetics consisting of transformers integrated with
common mode chokes. The transformer center taps
are connected to ground via an RC network or “Bob
Smith” termination. The purpose of this termination is
to reduce common mode emissions. The transformer
provides common mode isolation to transient events,
but no protection for differential surges. During a
differential transient event, current will flow through
the transformer, charging the windings on the line side.
Energy is transferred to the secondary until the surge
subsides or the transformer saturates.
A typical protection scheme which utilizes RClamp3374N
is shown in Figure 1. The devices are located on the PHY
side of the transformer with one device placed across
two line pairs. Parasitic inductance in the protection
Ethernet PHY
RClamp3374N
RClamp3374N
0.01uF
Figure 1 - Typical Ethernet Protection Circuit
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Final Datasheet Rev 4.0
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path should be minimized by locating RClamp3374N as
physically close to the magnetics as possible, and pref-
erably on the same side of the PCB. Reducing parasitic
inductance is especially important for suppressing fast
rise time transients such as ESD and EFT. Inductance
in the path of the protection device increases the peak
clamping voltage seen by the protected device (V =
L di/dt). Differential pairs are routed through each
RClamp3374N. Traces are routed unbroken to connect
pins 1 and 10 (Line 1), 2 and 9 (Line 2), 4 and 7 (Line 3)
and 5 and 6 (Line 4). Pins 3 and 8 as well as the tabs are
not connected.
Placing the protection on the PHY side of the magnetics
is advantageous in that the magnitude and duration of
the surge is attenuated by the transformer windings. The
amount of attenuation will vary by vendor and config-
uration of the magnetics. The Ethernet transformer has
to be able to support the impulse tests without failure.
A typical Ethernet transformer can withstand a few
hundred amperes (tp=8/20µs) before failure occurs, but
this needs to be verified by testing. Alternatively, the
protection can be placed on the line side of the trans-
former. However, the additional protection afforded by
the transformer is lost, and the ability of the system to
withstand high energy surges is limited to the capability
of the protection device.
2
3
4
RJ-45
5
6
7
8
75 Ohms
0.001uF
2kV
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Semtech
Proprietary and Confidential
Outline Drawing - DFN 3.0 x 2.0 x 0.6mm 10 Lead
A D B
DIMENSIONS
MILLIMETERS
DIM
MIN NOM MAX
PIN 1
A 0.50 0.60 0.65
INDICATOR
(LASER MARK) E A1 0.00 0.03 0.05
A2 (0.15)
b 0.15 0.20 0.25
b1 0.25 0.35 0.45
D 2.90 3.00 3.10
E 1.90 2.00 2.10
e 0.60 BSC
e1 0.65 BSC
e2 0.95 BSC
A SEATING L 0.25 0.30 0.35
PLANE L1 0.95 1.00 1.05
aaa C N 10
A2 A1 C aaa 0.08
bbb 0.10
D/2
3X b1

1 2
LxN
E/2
L1 /2
3X L1

N
e bxN
bbb C A B
e1
e2

NOTES:
1. CONTROLLING DIME NSIONS ARE IN MIL LIMETE RS (ANGLES IN DEGREES).

Land Pattern - DFN 3.0 x 2.0 x 0.6mm 10 Lead

P1
P X1

DIMENSIONS
DIM MILLIMETERS
C (1.98)
G 1.40
0.50 P 0.60
(C) Y1 G Z
P1 0.65
P2 0.95
X 0.25
X1 0.40
Y Y 0.58
Y1 1.00
Z 2.56
P2
X

NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
COMPANY'S MANUFACTURING GUIDELINES ARE MET.

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Tape and Reel Specification

4mm Pitch, 8mm wide plastic tape

4mm Pitch, 12mm wide plastic tape

YYWW

YYWW

YYWW
3374N

3374N

3374N
Pin 1 Location
(Towards Sprocket Holes)

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Final Datasheet Rev 4.0 Semtech
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Marking Code

3374N
YYWW
Notes: Dot indicates Pin 1 Location

Ordering Information

Part Number Qty per Reel Reel Size Carrier Tape Tape Width Pitch
RClamp3374N.TCT 3000 7 Inch Plastic 8mm 4mm
RClamp3374N.TRT 3000 7 Inch Plastic 12mm 4mm
RailClamp and RClamp are registered trademarks of Semtech Corporation.

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Important Notice

Information relating to this product and the application or design described herein is believed to be reliable, however such information is provided
as a guide only and Semtech assumes no liability for any errors in this document, or for the application or design described herein. Semtech reserves
the right to make changes to the product or this document at any time without notice. Buyers should obtain the latest relevant information before
placing orders and should verify that such information is current and complete. Semtech warrants performance of its products to the specifications
applicable at the time of sale, and all sales are made in accordance with Semtech’s standard terms and conditions of sale.

SEMTECH PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS,
DEVICES OR SYSTEMS, OR IN NUCLEAR APPLICATIONS IN WHICH THE FAILURE COULD BE REASONABLY EXPECTED TO RESULT IN PERSONAL INJURY,
LOSS OF LIFE OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. INCLUSION OF SEMTECH PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD
TO BE UNDERTAKEN SOLELY AT THE CUSTOMER’S OWN RISK. Should a customer purchase or use Semtech products for any such unauthorized
application, the customer shall indemnify and hold Semtech and its officers, employees, subsidiaries, affiliates, and distributors harmless against
all claims, costs damages and attorney fees which could arise.

The Semtech name and logo are registered trademarks of the Semtech Corporation. All other trademarks and trade names mentioned may be
marks and names of Semtech or their respective companies. Semtech reserves the right to make changes to, or discontinue any products described
in this document without further notice. Semtech makes no warranty, representation or guarantee, express or implied, regarding the suitability of
its products for any particular purpose. All rights reserved.

© Semtech 2020

Contact Information

Semtech Corporation
200 Flynn Road, Camarillo, CA 93012
Phone: (805) 498-2111, Fax: (805) 498-3804
www.semtech.com

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