1N4386

SILICON MULTIPLIER VARACTOR DIODE

PACKAGE STYLE DO- 4

DESCRIPTION:
The 1N4396 is a High Power Silicon
Multiplier Varactor Diode.

MAXIMUM RATINGS
IF 200 mA
VR 250 V
O
PDISS 20 W @ TC = 25 C
O O 1 = Anode
TJ -65 C to +150 C 2 = Cathode
O O
TSTG -65 C to +175 C
O
θJC 5.0 C/W

CHARACTERISTICS TC = 25 C
O

SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

VBR IR = 10 µA 250 V
CT VR = 6.0 V f = 1.0 MHz 20 50 pF
RS VR = 6.0 V f = 50 MHz 0.7 Ohms
POUT(X3) PIN = 30 W FIN = 150 MHz 15 W

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.