LIBYAN INTERNATIONAL

MEDICAL UNIVERSITY
ENGINEERING

DEPARMENT
MECHATRONICS

Electronic LAB

Experiment No. 4

BJT Common Emitter

biasing
Objectives:

• To measure the BJT current gain β

• To determine the effect of β change on the Q-
point
• To compare the stability of various bias
configurations

APPARATUS USED:

• 2~4 silicon transistor: 2N2222,

BC547, BC237
• DC power supply (10 or 12 V)
• Resistors: 1 kOhm, 300 kOhm
• Voltmeter

Experimental Steps and Procedure:

β measurement

• After measuring the resistance values, connect

the circuit shown in the figure (1)
• Measure the voltages across the base and
collector resistors
• Calculate β from the base and collector
currents
• Remeasure β for a few transistors
fixed bias configuration:

• For the same circuit in figure (1) , calculate and measure

the Q-point for a few transistors

Voltage divider bias configuration:

• Connect the circuit shown in the figure (2).

• Record the actual resistor values.
• Measure Q-point for a few transistors
• 1)ICQ, VCEQ, VBQ, VEQ
• Compare with your approximate calculations.
• Discuss how does the Q-point change with changing
the transistor

39.9k
400k

10k 2.2k

Figure(2) Figure(1)
Results:
VCCQ=VCC-VRC

ICQ=VRC/RC

For fig (1)

VRB VRC β ICQ VCCQ

Q1 14.30v 8.04v 221 8.04mA 6.46v

2N222
Q2 14.32v 11.19v 321 0.01119 3.82v
c547B A
Q3 14.32v 12.37v 345 0.01237 2.63v
BC237 A
Q4 14.32 11.19v 225 0.01119 3.82v
C547B A

For fig (2)

ICQ VCEQ VRc VEQ

Q1 1.07mA 9.10v 3.53v 2.32v 2.93v

2N222

Q2 1.07mA 9.14v 3.51v 2.31v 2.94v

c547B

Q3 1.07mA 9.10v 3.54v 2.32v 2.94v

BC237

Q4 1.07mA 9.15v 3.52v 2.31v 2.94v

C547B
 Discussion:

The Q-point can change with changing the transistor

due to variations in parameters such as beta (current
gain), VBE (base-emitter voltage), and VCE
(collector-emitter voltage). Different transistors have
different characteristics and specifications, so using
a different transistor in a circuit can result in a
different Q-point.