Passive MIC

Passive components
in MMIC technology
Evangéline BENEVENT
Università Mediterranea di Reggio Calabria

DIMET
1
Passive components in MMIC technology
Introduction
Design cycle of passive components in MMIC technology

Distributed components
Inductor, capacitor
Localized components
Resistor, capacitor, inductor
Microwave characterization of passive devices

S-parameters
Extraction of device’s characteristics from measurements
De-embedding and calibration
2
Introduction

Inductor, capacitor

S-parameters
3
Introduction
Maxwell’s equations
All electromagnetic behaviors can ultimately be explained by Maxwell’s four

basic equations: ∂B ∂D
∇.D = ρ ∇.B = 0 ∇×E = − ∇×H = j +
∂t ∂t
However, it isn’t always possible or convenient to use these equations directly.

Solving them can be quite difficult. Efficient design requires the use of
approximations such as lumped and distributed models.
Why are models needed?
Models help us predict the behavior of components, circuits and systems.

Lumped models are useful at lower frequencies, where some physical effects
can be ignored. Distributed models are needed at higher frequencies to
account for the increased behavioral impact of those physical effects. 4
Introduction
Two ports models
Two-port, three-port, and n-port models simplify the input/output response of

active and passive devices and circuits into “black boxes” described by a set
of four linear parameters.
Lumped models use representations such as admittances (Y) and resistances

(R). Distributed models use S-parameters (transmission and reflection
coefficients).
Limitations of lumped models
At low frequencies most circuits behave in a predictable manner and can be

described by a group of replaceable, lumped-equivalent black boxes.
5
Introduction
Limitations of lumped models
At microwave frequencies, as circuit element size approaches the

wavelengths of operating frequencies, such a simplified type of model
becomes inaccurate. The physical arrangements of the circuit components
can no longer be treated as black boxes. We have to use a distributed circuit
element model and S-parameters.
S-parameters
S-parameters and distributed models provide a means of measuring,

describing, and characterizing circuits elements. They are used for the design
of many high-frequency products.
6
Introduction

Inductor, capacitor

S-parameters
7
Choice (or no choice!) of the substrate respect to the application or the specifications
Choice of additional key materials such as dielectric and magnetic materials
Analytical models ⇒ approximated size and performance of passive components
EM simulation (numerical modeling) ⇒ performance of passive components
NO
Performance = specifications?
YES
Fabrication of a prototype, Characterization, Test
DESIGN COST !
NO
Performance = specifications?
YES
GOOD JOB !
8
Introduction

Inductor, capacitor

S-parameters
9
From transmission lines, it is possible to realize low values passive components

like capacitances or inductances, provided that the length of the line is less than
λ/10.
Theory of transmission lines:
A section of a transmission line without losses

(or with low losses), with a length ℓ, with a
characteristic impedance Zc, and terminated Zc ZL
by a impedance (load) ZL presents an
impedance Z(ℓ), on the input, equal to:
Z L + jZ c tg ( βl )
Z (l ) = Z c ℓ
Z c + jZ L tg ( βl )
[1] C. Algani, “Composants passifs”, Support de cours du CNAM, Spécialité Electronique-Automatique. 10

If the length of the transmission line is small respect to the wavelength:
βℓ < π/6 or ℓ < λ/12
Then:
Z L + jZ c βl
Z (l ) = Z c
Z c + jZ L βl
This input impedance is a complex impedance so:
If Re(Z(ℓ)) << Im(Z(ℓ)): Z(ℓ) → pure imaginary
⇒ One can realize a capacitor or an inductor !
11
Inductor:
If ZL = 0 or ZL << Zctg(βℓ): Z ( l ) ≈ jZ c tg ( β l )
By identification: Z = jLω
Zc
The synthesized inductance L (H) has a value equal to: L≈ tg ( βl )
ω
This inductance can be realized by a short-circuited line or by a line with a

characteristic impedance Zc high respect to the impedance of the load.
12
Real realization of distributed inductor:
Series inductance: ℓ
Z01 Z02
Z0 >> Z01, Z02 Z0
Z01
Shunt inductance:
Z0 ℓ
Short-circuit
13
Capacitor:
Zc
If ZL = ∞ or ZL >> Zctg(βℓ): Z (l) ≈
jtg ( β l)
1
By identification: Z=
jCω
tg ( β l )
The synthesized capacitance C(F) has a value equal to: C=
ωZ c
This capacitance can be realized by a open-circuit line or by a line with a

characteristic impedance Zc low respect to the impedance of the load.
14
Real realization of distributed capacitor:
Series capacitance:
Z0 Z0
g
Shunt capacitance:
Z0 << Z01, Z02 ℓ
Z01 Z02
Z0
15
Introduction

Inductor, capacitor

S-parameters
16
The localized components have higher values than the distributed components.
However, due to parasitic elements at high frequency, the dimensions of localized

components must be small compared to the wavelength (ℓ < λ/30). In this way,
the variations of phase are negligible.
Localized components can be described by analytical models which take into

account the frequency-dependent parasitic effects and different kinds of losses by
adding other localized components.
17
Resistor resistor
metallization
Structure:
substrate
ground plane
The resistance R (Ω) of a conductor strip is defined by the following equation:

1 l
R=
σ W ⋅t
where σ is the conductivity of the conductor, ℓ the length, W the width, and t the
thickness of the conductor strip.
If the conductor strip is square, the resistance does not depend on the
dimensions of the strip and the “square resistance” (Ω/square) is equal to:
11
Rs =
σ t 18
Resistor
At high frequency, the current circulates only in a thin thickness of the resistive
layer called “skin depth” and not in the total thickness t. The skin depth δ (m)
depends on the frequency:
2
δ=
ωµ 0 µ c σ
where ω=2πf is the pulsation (rad/s), µ0 and µc are the conductivities of the
vacuum and conductor respectively, σ is the conductivity.
The square resistance becomes:
11
Rs =
σδ
Typical values: 20 to 500 Ω/square.

19
C3
Resistor
R (f) L
Resistor model:
C1 C2
R is the resistance, depending on the skin-effect,

The distributed nature of the resistor is taken into account with the series
inductance L,
C1, C2 are the parasitic shunt capacitances to ground of the resistor and
its contact pads,
C3 is the end-to-end feedback capacitance.
[2] Frank Ellinger, “RF Integrated Circuits and Technologies”, Springer, 2007. 20
Capacitor
Interdigital capacitor
The capacitance increases with the number of fingers.
Port 1 Port 2
21
Capacitor
R L
Equivalent circuit: C
C1 C2
C is the interdigital capacitance.

R corresponds to the resistive losses.
L is the parasitic inductance of the fingers.
C1, C2 are the parasitic capacitances to the ground.
22
Capacitor
Advantages:
Only one metallization plane,

Easy to manufacture.
Drawback:
Too small capacitance: typically C = 0.5 to 2 pF/mm².
23
Capacitor
MIM (Metal-Insulator-Metal) capacitor

ε 0ε r S ε 0 ε r Wl
C MIM (F ) = =
e e
ε0 is the vacuum permittivity.

εr is the relative permittivity of the
insulator.
W is the width of the capacitor.
ℓ is the length of the capacitor.
e is the thickness of the insulator
layer.
24
Capacitor
MIM capacitor model:

L1 C R L2
C1 C2
C is the MIM capacitance,

R corresponds to the losses of the capacitor,
C1, C2 are the parasitic capacitances to ground from bottom, top plate,
L1, L2 are the parasitic inductances of bottom, top plate. 25
Capacitor
Choice of the dielectric material:
The higher the relative permittivity of the material is, the higher the
value of the capacitance is (C = εdielectric.C0). So one can choose a
high permittivity material.
But in a MMIC circuit, the capacitors must support various DC

polarization voltages. So one have to also consider the breakdown
voltage (or breakdown electric field).
[3] C. Rumelhard, “MMIC Composants”, Techniques de l’Ingénieur. 26

Capacitor
For example, in order to the titanium dioxide (TiO2) supports the same
voltage than the tantalum pentoxide (Ta2O5), it is necessary to multiple
the thickness by five, so to reduce the capacitance by five.
Dielectric material Relative permittivity Breakdown electric field Capacitance density for
(V/µm) Vmax = 50 V (pF/mm²)
SiO2 (silica) 5 300 265
Si3N4 (silicon nitride) 6.5 250 290
Al2O3 (alumina) 8.8 250 390
Ta2O5 (tantalum pentoxide) 25 200 885
TiO2 (titanium dioxide) 55 50 490

27
Capacitor
This is summarized in the third column with the capacitance density for
a maximum voltage. Regarding this parameter, the best dielectric
material is now the tantalum pentoxide instead of the titanium dioxide.
Dielectric material Relative permittivity Breakdown electric field Capacitance density for
(V/µm) Vmax = 50 V (pF/mm²)
SiO2 (silica) 5 300 265
Si3N4 (silicon nitride) 6.5 250 290
Al2O3 (alumina) 8.8 250 390
Ta2O5 (tantalum pentoxide) 25 200 885
TiO2 (titanium dioxide) 55 50 490

28
Capacitor
Because of the leakage area, in real topology, it is necessary to add an

air bridge.
Air bridge Air bridge
(deck) (pillar)
First metal 2nd thick

2nd thick metal metal
Silicon nitride Si3N4 Silicon nitride Si3N4
Leakage area
First metal
Substrate
Substrate
29
Inductor
Rectangular plate inductor
  2l  W +t
L = 2 µ 0 l ln  + 0.5 +
 W + t  3l 
ℓ
In order to reduce the area occupied by the inductor, one can:

Fold down the conductor,
Make loops.
30
Inductor
Loop inductor
  l  
L = 2.10 −9.l ln  − 1.76
 W + t  
W is the width of the conductor,

t is the thickness of the conductor,
ℓ is the circumference of the loop equal to:
l = 2πR
31
Inductor
Meander inductor
  l  W + t  
L = 2.10 −9.l ln  + 0.22  + 1.19
 W + t   l  

t is the thickness of the conductor,
ℓ is the length of the meander.
Typical values: 0.4 to 4 nH.

32
Inductor
Circular spiral inductor

394a ²n ²
L = 10 −9. K
8a + 11c
W W Do + Di Do − Di
K = 0.57 − 0.145ln > 0.05 a= c=
h h 4 2
n is the number of turns,

h is the height of the substrate,
Do is the outer diameter,
Di is the inner diameter.
Typical values: 0.2 to 15 nH. 33

Inductor
Square spiral inductor
There are many ways to layout a planar spiral inductor. The optimal
structure is the circular spiral. This structure places the largest amount of
conductors in the smallest possible area, reducing the series resistance of
the spiral.
This structure, however, is often not used because it is not supported by

many mask generation systems. Many of these systems are able to only
generate Manhattan geometries (and possibly 45° angles as well).
Manhattan-style layouts only contain structures with 90°angles.
[4] R.L. Bunch, D.I. Sanderson, S. Raman, Application Note, “Quality factor and inductance in differential IC
implementations”, IEEE Microwave Magazine, June 2002. 34
Inductor
So a simple solution is to approximate a circle by a

polygon. An octagonal spiral as a Q that is slightly
lower than the circular structure but is much easier
to lay out. Octagonal inductor
The square spiral structure does not have the best performance, but it is
one of the easiest structure to lay out and simulate.
35
Inductor

2 µ 0 n ²d avg   2.067  
L= ln  + 0.178 ρ + 0.125 ρ ²
π   ρ  
n is the number of turns,

davg represents the average
diameter of the spiral,
ρ represents the percentage
of the inductor area that is
filled by metal traces.
36
Inductor with magnetic material
When a high permeability material is placed near a conductor carrying

electrical current, the inductance of the conductor is know to increase.
Ideally, if a conductor is enclosed in an infinite magnetic medium, the
inductance is increased by a factor of µr, the relative permeability of the
medium. If µr is purely real (no magnetic loss) and large, then the inductance
as well as the quality factor Q of the structure are significantly enhanced.
It also means that, for the same inductance value, a much smaller substrate
area would be needed. Furthermore, since the magnetic flux is confined
within the magnetic material, cross-talk between the inductors on the same
chip would be reduced.
[5] V. Korenivski, R.B. van Dover, “Magnetic film inductors for radio frequency applications”, J. Appl. Phys. 82 (10), Nov.
1997, pp. 5247-5254. 37
Thin film solenoid with a magnetic core
What’s a solenoid?
38
Cross section of thin film rectangular solenoid
conductor/coil
ts
µr tm
magnetic core
insulator µ0 ti
tc
39
Top view of thin film rectangular solenoid
Wc
1 2 3 … N turns
40
Inductance:
where N is the number of turns, Φ the magnetic flux,
NΦ µ 0 µ r N ²W .t m µ0 the vacuum permeability, µr the relative
L= =
I l permeability of the magnetic material, tm its
thickness, W the width of the solenoid, ℓ its length.
Quality factor:
Q=
ωL
=
ωµ 0 µ r Nt mW c t c where Wc is the width of the conductor strip, tc its
R 2lρ thickness, ρ its resistivity..
41
Parasitic capacitance:
W cW
C ≈ 2Nε
ti
where ε = ε0.εr is the permittivity of the insulator, ti its thickness.
Resonance frequency:
−1/ 2
1  8π ² µ 0 µ r εN 3W ²t mWc 
fr = = 
2π LC  ti l 

42
Magnetically sandwiched stripe inductor
Magnetic layer µr
tm
µ0 tc= g
Conductor strip
tm  2K  W  gt m µ r
L = µ0 µr l 1 − tanh   K=
2W  W  2K   2
Where µ0 is the vacuum permeability, µr the relative permeability of the

magnetic material, ℓ the length of the strip, tm the thickness of the
magnetic, W the width of the structure, g the gap between the two
magnetic layers.
43
Magnetically wrapped stripe inductor

tm Magnetic layer µr
L = µ0 µr l tm
2W Conductor strip µ0 tc= g
The magnetically wrapped stripe inductor is an improved version of the

magnetically sandwiched stripe inductor as the factor:
2K W 
1− tanh 
W  2K 
was removed.
This is due to the enclosure of the magnetic flux in the wrapped version.
44
Introduction

Inductor, capacitor

S-parameters
45
S-parameters
Two-port model
Any device can be described by a set of four variables associated with

a two-port model. Two of these variables represent the excitation
(independent variables), and the remaining two represent the response
of the device to the excitation (dependent variables).
If the device is excited by voltage sources V1 and V2, the currents I1

and I2 will be related by the following equations:
I1 = y 11V1 + y 12V2 I1 I2
I 2 = y 21V1 + y 22V2
Port 1 V1 Two-port device V2 Port 2
[6] Test & Measurement Application Note 95-1, Hewlett Packard, “S-parameters techniques for faster, More accurate
network design”, 1997. 46
S-parameters
Two-port model
In this case, with port voltages selected as independent variables and

port currents taken as dependent variables, the relating parameters are
called short-circuit admittance parameters, or y-parameters. Four
measurements are required to determine the four parameters y11, y12,
y21, y22. Each measurement is made with one port excited by a voltage
source, while the other port is short-circuited. For example:
I2
y 21 =
V1 V
2 =0
At high frequencies, lead inductance and capacitance make short and

open circuits difficult to obtain. So the characterization of microwave
devices by S-parameters is more convenient.
47
S-parameters
Using S-parameters
“Scattering parameters” which are commonly referred as S-parameters, are

a parameter set that relates to the traveling waves that are scattered or
reflected when an n-port network is inserted into a transmission line.
S-parameters are usually measured with the device imbedded between a

50 Ω load and source.
ZS
a1 a2
VS ∼ b1
Two-port device
b2
ZL
48
S-parameters
Incident and reflected waves
The independent variables a1 and a2 are normalized incident voltages:

V1 + I1Z 0 voltage wave incident on port 1 Vi 1
a1 = = =
2 Z0 Z0 Z0
V2 + I 2 Z 0 voltage wave incident on port 2 Vi 2

a2 = = =
2 Z0 Z0 Z0
The dependent variables b1 and b2 are normalized reflected voltages:

V1 − I1Z 0 voltage wave reflected from port 1 Vr 1
b1 = = =
2 Z0 Z0 Z0
V2 − I 2 Z 0 voltage wave reflected from port 2 Vr 2

b2 = = =
2 Z0 Z0 Z0
The parameters are referenced to Z0 (supposed real and positive)

generally equal to 50 Ω 49
S-parameters
Definition of S-parameters
a1 S21 a2
S11 S22
b1 b2
S12
The linear equations describing the two-port device are then:

b1 = S11a1 + S12 a2
b2 = S21a1 + S22a2
Under the matrix form:

 b1  S11 S12   a1 
b  = S  
 2   21 S22  a2 
50
S-parameters
Definition of S-parameters
S11 is the input reflection coefficient with the output port terminated by a
matched load (ZL = Z0 sets a2 = 0): b1
S11 =
a1 a2 =0
S22 is the output reflection coefficient with the input port terminated by a
matched load (ZS = Z0 sets VS = 0): b2
S 22 =
a2 a1 = 0
S21 is the forward transmission coefficient with the output port terminated by
a matched load (ZL = Z0 sets a2 = 0): b2
S 21 =
a1 a 2 =0
S12 is the reverse transmission coefficient with the input port terminated by
a matched load (ZS = Z0 sets VS = 0):
b1
S12 =
a2 a1 = 0
51
S-parameters
Cascade of several two-port devices
b1   A B  a2 
The ABCD matrix: a  = C D  b 
 1   2 
a1 Two-port Two-port Two-port a2

device 1 device 2 device 3
b1 b2
[A1B1C1D1] [A2B2C2D2] [A3B3C3D3]
a1 Equivalent a2
two-port
b1 device 2 b2
[ABCD]
b1   A B  a2   A1 B1   A2 B2   A3 B3  a2 

a  = C D  b  = C D  C D2  C3 D3  b2 
 1   2   1 1 2
52
S-parameters
Two other matrix are widely used:
Y-matrix (admittance matrix)

I1  V1  Y11 Y12  V1 
I  = [Y ].V  = Y  
 2  2   21 Y22  V2 
Z-matrix (impedance matrix)

V1  I1  Z11 Z12  I1 
V  = [Z ].I  = Z  
 2  2   21 Z 22  I 2 
I1 I2
Port 1 V1 Two-port device V2 Port 2
53
S-parameters
Relations between the matrix of a two-port device
54
S-parameters
Relations between the matrix of a two-port device
55
S-parameters
ABCD matrix and S-parameters matrix of useful two-port devices
Z1 Z2
Z3
56
S-parameters
ABCD matrix and S-parameters matrix of useful two-port devices
Y3
Y1 Y2
Zc, γ
ℓ
57
Introduction

Inductor, capacitor

S-parameters
58
Extraction of the device’s characteristics from measurements
How to compare analytical and experimental (measurements) results?
Analytical study: Measurements:
Comparison
is now
Propagation constant γ possible! S-parameters
Characteristic impedance Zc S11, S12, S21, S22
“conversion” “conversion”
S-parameters Propagation constant γ

S11, S12, S21, S22 Characteristic impedance Zc
59
Experimental results:
During measurements, the device is placed between two 50 Ω ports.
50 Ω port Two-port device 50 Ω port
1-Γ
Γ T 1+Γ
Γ
50 Ω port Γ -Γ
Γ -Γ
Γ Γ 50 Ω port
1+Γ
Γ T 1-Γ
Γ
Graph of fluency
60
Extraction of the characteristic impedance and the propagation constant from

the S-parameters (for a reciprocal device):
Transmission coefficient:
S 21
T=
1 − S11Γ
Propagation constant:
1
γ = − ln(T )
l
Reflection coefficient:
S11 ² − S 21 ² + 1 Γ ≤1
Γ = K ± K² + 1 K=
2S11
Characteristic impedance:
1+ Γ
Zc = Z0
1− Γ 61
Calculation of S-parameters from analytical evaluation of the propagation

constant and the characteristic impedance (for a reciprocal device):
Transmission coefficient:
T = exp( −γl )
Reflection coefficient:
Zc − Z0
Γ=
Zc + Z0
S-parameters:
Γ(1 − T ²)
S11 = S 22 =
1 − T ²Γ ²
T (1 − Γ ²)
S12 = S 21 =
1 − T ²Γ ²
62
Introduction

Inductor, capacitor

S-parameters
63
Vector network analyzer (VNA)
Vector Network Analyzer are commonly used to measure S-parameters of a

DUT (Device Under Test).
VNA are available for measurements from 45 MHz up to 220 GHz.
The DUT is excited on one port by a sinusoidal signal of constant

magnitude and a frequency range defined by the user. The transmitted and
reflected signals are measured by the VNA. The operation is repeated for
each port, and then the scattering matrix (S-parameters) can be evaluated
for each point of frequency.
[7] B. Bayard, “Contribution au développement de composants magnétiques pour l’électronique hyperfréquence”, Thèse de
Doctorat, 2000. 64
In case of a two-port device, the VNA automatically excites first the port 1 of
the DUT and measures the parameters S11 and S21, and second excites the
port 2 and measures the parameters S22 and S12. In this way, it is not
necessary to reverse the DUT.
When one of the two port is excited, the VNA divides the signal in two parts.
The first one will be the excitation source of the DUT, the second one will
be needed as a reference. The reflected and transmitted signals should be
compared to this reference.
The DUT is linked to the VNA by coaxial cables. The bandwidth of the
cables and the VNA must be greater than the frequency range study of the
DUT.
65

Thin
frequency
sweeping
Digit
Screen display keypad
Port 1
Port 2
Command
buttons
66
Measurement benchmark
VNA
Coaxial Port 1 Port 2

cable
DUT
GSG
coplanar
probes Substrate
Ground Signal
67
Calibration permits to suppress the parasitic effects of the cables, the probes
and the VNA.
VNA

cable
DUT
GSG
coplanar
probes Substrate
CALIBRATION
68
Calibration:
Two categories of errors:
Random errors:
Can not be corrected,
Supposed negligible respect to the systematic errors,
Example: noise, temperature drift, user manipulation …
To use the maximal power source without saturate the DUT to
optimize the SNR (Signal/Noise Ratio).
Systematic errors:
Reproducible errors,
Must be corrected by the calibration.
69
Calibration
Systematic errors:
Directivity error: error due to the imperfect separation of reflected and

transmitted signals.
Impedance mismatching of the generator output: a part of the signal
reflected by the DUT is reflected by the generator.
Impedance mismatching of the load: a part of the signal transmitted by
the DUT to the load is reflected by the load.
Tracking error: this error is due to the path difference between the
measured (external) signals and the reference (internal) signals.
Error due to the dissymmetry of the switch that orients the signals from
the generator to the ports 1 or 2.
Insulation error: this is due to the coupling between the two ports.
70
Calibration
The goal of the calibration is to obtain a perfect measurement system by

removing the errors introduced by the experimental benchmark.
The calibration consists on the measurement of special components called

“standards” in order to obtain data to evaluate the elements of the error
model. The standards take place in a “calibration kit” or a calibration
substrate.
Three models exist:

The model with 12 error elements,
Complexity
Accuracy
The model with 10 error elements,
The model with 8 error elements.
71
Calibration
The model with 12 error elements:
Forward (F) model ⇒ 6 elements
EIF
Sij: intrinsic S-parameters of the DUT Transmission

EIF: insulation error Incident wave measurement
EGF: generator impedance mismatching 1 S21 ETF

ELF: load impedance mismatching
EDF EGF S11 S22
EDF: directivity error ELF
ERF: reflection error Reflected wave ERF S12
ETF: transmission error
72
Calibration
The model with 12 error elements:
Reverse (R) model ⇒ 6 elements
Reflected
wave
Sij: intrinsic S-parameters of the DUT
S21 ERR
EIR: insulation error
EGR: generator impedance mismatching S11 EGR EDR
ELR S22
ELR: load impedance mismatching Incident
S12 1 wave
EDR: directivity error
ERR: reflection error Transmission ETR
EIR
measurement
ETR: transmission error
73
OSTL calibration (open-short-thru-load calibration)
Commonly used calibration based on the model with 12 error elements.

4 standards are required: open, short, thru, and load.
Large bandwidth calibration.
OST (open-short-thru) or OSL (open-short-line) calibration
Based on the model with 8 error elements.

⇒ 3 standards are needed instead of 4.
The standard “load” is eliminated, this is the hardiest to manufacture.
74
TRL calibration (thru-reflect-line)

High accuracy calibration.
Initially based on the model with 8 error elements.
Standard “thru”: the two ports are directly linked together. The standard “thru”
must be perfect.
Standard “reflect”: each port is connected to a unknown device with a high
reflection level.
Standard “line”: the two ports are linked by a transmission line. The length of the
line could be unknown.
LRL calibration (line-reflect-line)

Identical to the TRL calibration, but it could be convenient for the calibration of
planar lines since they can not be directly linked together (the standard “thru” is
not feasible).
75
Schematic of a calibration substrate
Probes positioned on a
calibration substrate Transition from probes to coaxial cable
GSG probes positioning on the Probes positioning on the contact pads of an IC

contact pads of an inductor
76
2 probes on the same support
Manual probe system
77
De-embedding permits to suppress the parasitic effects of the transition

between the probes and the DUT, and the access of the DUT.
VNA

cable
DUT
GSG
coplanar
probes Substrate
DE-EMBEDDING
78
De-embedding techniques fall into two broad categories:

Modeling based approach,
Measurement based approach.
The de-embedding approach starts with the knowledge (by measurements or

simulation) of the S-parameters of a structure containing the discontinuity to be
studied and other auxiliary part such as traces, adapters, etc. The S parameters of
these parts are evaluated by means of simulation or measurements.
The S matrix of the discontinuity is extracted from the S matrix of the complete
structure by means of the information on the auxiliary parts.
More exactly, the ABCD matrix is used for the calculation.
[8] S. Agili, A. Morales, “De-embedding techniques in signal integrity: a comparison study”, 2005 Conference on
Information Sciences and Systems. 79
De-embedding step-by-step:
Measurement of the S-parameters

of the complete structure and
Substrate
conversion in ABCD matrix.
Evaluation by measurement or
DUT
simulation of the S-parameters of
the auxiliary parts and conversion
in ABCD matrix.
Evaluation of the ABCD matrix of [A1B1C1D1] [ADUT BDUT [A2B2C2D2]
CDUT DDUT]
the DUT, and conversion in S-
parameters:
[AtotalBtoitalCtotalDtotal]
−1 −1
 ADUT B DUT   A1 B1   Atotal B total   A2 B2 
C = . .
 DUT D DUT  C1 D1  C total D total  C 2 D 2 
80
De-embedding
Example with a planar spiral inductor:
[9] S. Couderc, “Etude de matériaux ferromagnétiques doux à forte aimantation et à résistivité élevée pour les radio-fréquences,
applications aux inductances spirales planaires sur silicium pour réduire la surface occupée”, Thèse de Doctorat, 2006. 81
On-wafer de-embedding:
Short-open de-embedding
The open-short de-embedding method is a two-step de-embedding

method and is considered as the industry standard. Shunt and series
parasitic elements are removed by using open and short dummy
structures, respectively.
Consequently, a short and an open circuits are added on the wafer for
each device to be measured.
[10] M. Drakaki, A.A. Hatzopoulos, S. Siskos, “De-embedding method fro on-wafer RF CMOS inductor measurements”,
Microelectronics Journal 40 (2009) 958-965.
[11] T.E. Kolding, “On-wafer calibration techniques for GHz CMOS measurements”, Proc. IEEE 1999 Int. Conf. on Microelectronic
Test Structures, Vol. 12, March 1999, pp. 105-110.
82
From the measurement of the short-circuit, the open circuit, and the two-
port device, it is possible to extract the intrinsic characteristics of the
DUT:
(−1
YDUT = Ytotal − Z short )
−1
( −1
− Yopen − Z short )
−1
Zshort Zshort
DUT
Yopen Yopen
83
Example of a coplanar transmission line:
De-embedding reference planes Open circuit Short circuit
84
Example of a planar spiral inductor:
85
Passive components
in MMIC technology
Evangéline BENEVENT
Università Mediterranea di Reggio Calabria

DIMET
Thank you for your attention!
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Passive components

Università Mediterranea di Reggio Calabria

Passive components in MMIC technology

Microwave characterization of passive devices

Passive components in MMIC technology

Microwave characterization of passive devices

All electromagnetic behaviors can ultimately be explained by Maxwell’s four

However, it isn’t always possible or convenient to use these equations directly.

Why are models needed?

Models help us predict the behavior of components, circuits and systems.

Two ports models

Two-port, three-port, and n-port models simplify the input/output response of

Lumped models use representations such as admittances (Y) and resistances

Limitations of lumped models

At low frequencies most circuits behave in a predictable manner and can be

Limitations of lumped models

At microwave frequencies, as circuit element size approaches the

S-parameters and distributed models provide a means of measuring,

Passive components in MMIC technology

Microwave characterization of passive devices

Design cycle of passive components in MMIC technology

Choice of additional key materials such as dielectric and magnetic materials

Analytical models ⇒ approximated size and performance of passive components

EM simulation (numerical modeling) ⇒ performance of passive components

Passive components in MMIC technology

Microwave characterization of passive devices

From transmission lines, it is possible to realize low values passive components

Theory of transmission lines:

A section of a transmission line without losses

[1] C. Algani, “Composants passifs”, Support de cours du CNAM, Spécialité Electronique-Automatique. 10

If the length of the transmission line is small respect to the wavelength:

βℓ < π/6 or ℓ < λ/12

This input impedance is a complex impedance so:

If Re(Z(ℓ)) << Im(Z(ℓ)): Z(ℓ) → pure imaginary

⇒ One can realize a capacitor or an inductor !

This inductance can be realized by a short-circuited line or by a line with a

Real realization of distributed inductor:

Z0 >> Z01, Z02 Z0

This capacitance can be realized by a open-circuit line or by a line with a

Real realization of distributed capacitor:

Passive components in MMIC technology

Microwave characterization of passive devices

However, due to parasitic elements at high frequency, the dimensions of localized

Localized components can be described by analytical models which take into

The resistance R (Ω) of a conductor strip is defined by the following equation:

Typical values: 20 to 500 Ω/square.

R is the resistance, depending on the skin-effect,

The capacitance increases with the number of fingers.

C is the interdigital capacitance.

Only one metallization plane,

Too small capacitance: typically C = 0.5 to 2 pF/mm².

MIM (Metal-Insulator-Metal) capacitor

ε0 is the vacuum permittivity.

MIM (Metal-Insulator-Metal) capacitor

MIM capacitor model:

C is the MIM capacitance,

MIM (Metal-Insulator-Metal) capacitor

Choice of the dielectric material:

But in a MMIC circuit, the capacitors must support various DC

[3] C. Rumelhard, “MMIC Composants”, Techniques de l’Ingénieur. 26

MIM (Metal-Insulator-Metal) capacitor

Si3N4 (silicon nitride) 6.5 250 290

Al2O3 (alumina) 8.8 250 390

Ta2O5 (tantalum pentoxide) 25 200 885