L62

PHOTODETECTORS

electron from This ercessnoisestructure.

materialandwhere
thexcess
e
general,depends
be
carrierwhere experience
ayerageMUILTIPLICATION
ityAVALANCHE
and noise that The relatively photogenerated As 6.4
NOISE P given by is
eiector
randomness the
(mi) gain the
we distribution the
noise
hole would ratio on gain noted becomes II Example
pFpt. sum If
factor exponent thesymbols we R
of can high. defined is
reduce
and the behaves of is
ionization factor exist mean-square squared.
suficiently carlier, loadR 6-7. the the
F the be B=
of and if From carrier
of
resIstor
the is actual
is all varies
x
approximated Eq.
in ()
denote That
possible the
455 the lk2.
the
1f approximphotodiode
atcombination
ely
a pair photodctector
MHz.
multiplication
rates measure carrier
defined noise experimental (6-7).
gain
wid e avalanche
is, undergoes
so Is
photodiode
that ks2, I
F= between an if so
gains B=R,C and
and Since (m' ) the and
(w:)
pairs
generated
by (m') by(mr),ensemble m
that that process B=
: like the of
amplificr
on of (m') denotes
> load circuit the
capacitance a
the
process.
the were 0
and observations the
th e (m ) the any the resistance amplifier RrCr 2r simple load
(m'multiplied
) g'+* noise
noise average mean-square same is bandwidth
MHz 23
=
carricr increase M2 in 1.0 = the
M?particularstatistical capacitanes, and
an input is3 RC
amplitier
created
in statistically to
It depending
avalanche an multiplication. and 50 is pF, low-pass
depends in
muliplication. it 2, resistance the
detector by avalanche
has by(m) electron-hole in
exactly the
gain
nature,
then amplifier filtshown
er
input
on on been varying 1s the is
photodiode avalanche =
M greater circuit MS,
I
wirtehsistances
the noise the photodiode in
M
is
found is
gain, The since capac1tance
aFig.
ratio photodiode the pair then
resulting called
average (6-31)
that, process then thanprobabil
not bandwidth
CT
passband 6-8, and
of (6-33) to (6-32) might every (6-30) = 1s
(6-29) the Cr
the the the in can the I 4

for for (6-34)

variations where byofwhere
weighted injcctedholes the
hole electron the
injection,
Normally,
and a() gain the
avalanche
and The
(6-35) in and ionization clectrons
irjection,
gain
and
subscripts F,=
F.=1-k clectronsderivation
where B(x) the region
can and a carrier K{(k12) and
F,= and are
becan first the
rate
e k produce (of of
holes,
the
simplified ionizationratios and
kË
- width an
effective approximation
ken = electron be kË
2iO MA
- the
impactexpression
=)M() dr
kel h
considered kË
refer Wm,
excess
kelt |-k
k1-kik2 k ionization and rates and to as
as a(x)M' (x) dx
a(x)M(x) dx
k I-kz ionization.
noise shown for
hole
kË elcctrons
intake F
asand the in is
rate ionization
constant ki)] factors complex,
- ker) k;
avalanche into
and Mclntyre" Fig.
M.(k;1) -(1k-,)' are 6-5)
ratios 1) do account
and notrates, holes, k)'ka(|- since
is
are region. not
change the -k;)M, has
equal.
respectively. respectively. uniform, the shown electric
They
nonuniformity
Thus,much
are
(6-40) (6-39) (6-38) (6-37) (6-36)
that, and field
given (6-35) (6-34)
Eq. w:th The
for both in