MDF13N65B N-channel MOSFET 650V

MDF13N65B
N-Channel MOSFET 650V, 14A, 0.46Ω

General Description Features

These N-channel MOSFET are produced using advanced  VDS = 650V
MagnaChip’s MOSFET Technology, which provides low on-  ID = 14A @ VGS = 10V
state resistance, high switching performance and excellent  RDS(ON) ≤ 0.46Ω @ VGS = 10V
quality.

These devices are suitable device for SMPS, high Speed Applications
switching and general purpose applications.
 Power Supply
 PFC
 High Current, High Speed Switching

TO-220F
MDF Series
S

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS 650 V
Gate-Source Voltage VGSS ±30 V
TC=25oC 14* A
Continuous Drain Current o
ID
TC=100 C 8.8* A
(1)
Pulsed Drain Current IDM 56* A
o
TC=25 C 36.7 W
Power Dissipation PD
Derate above 25 oC 0.29 W/ oC
Repetitive Avalanche Energy(1) EAR 23.1 mJ
(3)
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns
Single Pulse Avalanche Energy(4) EAS 800 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C
* Id limited by maximum junction temperature

Thermal Characteristics
Characteristics Symbol Rating Unit
(1)
Thermal Resistance, Junction-to-Ambient RθJA 62.5 o
(1)
C/W
Thermal Resistance, Junction-to-Case RθJC 3.4

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 MDF13N65B N-channel MOSFET 650V
Ordering Information
Part Number Temp. Range Package Packing RoHS Status
o
MDF13N65BTH -55~150 C TO-220F Tube Halogen Free

Electrical Characteristics (Ta =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 650 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 - 4.0
Drain Cut-Off Current IDSS VDS = 600V, VGS = 0V - - 1 μA
Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 7A 0.40 0.46 Ω
Forward Transconductance gfs VDS = 30V, ID = 7A - 3.7 - S
Dynamic Characteristics
Total Gate Charge Qg - 54 -
(3)
Gate-Source Charge Qgs VDS = 520V, ID = 14.0A, VGS = 10V - 13 - nC
Gate-Drain Charge Qgd - 21 -
Input Capacitance Ciss - 2400 -
Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0MHz - 12.8 - pF
Output Capacitance Coss - 243 -
Turn-On Delay Time td(on) - 32 -
Rise Time tr VGS = 10V, VDS = 325V, ID = 14.0A, - 81 -
nS
Turn-Off Delay Time td(off) RG = 25Ω(3) - 204 -
Fall Time tf - 76 -
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
IS - 14 - A
Source Diode Forward Current
Source-Drain Diode Forward Voltage VSD IS = 14.0A, VGS = 0V - 1.4 V
Body Diode Reverse Recovery Time trr - 377 - nS
IF = 14.A, dl/dt = 100A/μs(3)
Body Diode Reverse Recovery Charge Qrr - 8.2 - μC

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤7.0A, di/dt≤200A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C
4. L=7.6mH, IAS=14.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C,

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 MDF13N65B N-channel MOSFET 650V
0.9

30 Vgs=4.5V
=5.0V
=5.5V
25 =6.0V 0.8
=6.5V
ID,Drain Current [A]

=7.0V

RDS(ON) [Ω ]
20 =7.5V
=8.0V
=10.0V 0.7
15 =15.0V
VGS=10.0V
Notes
10 1. 250㎲ Pulse Test VGS=20V
2. TC=25℃ 0.6

0 0.5
0 5 10 15 20 25 0 3 6 9 12 15 18 21 24 27 30 33 36

VDS,Drain-Source Voltage [V] ID,Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage

3.0 1.2

※ Notes : Drain-Source Breakdown Voltage ※ Notes :

1. VGS = 10 V 1. VGS = 0 V
2.5 2. ID = 7 A 2. ID = 250㎂
Drain-Source On-Resistance

1.1
BVDSS, (Normalized)
RDS(ON), (Normalized)

2.0

1.5 1.0

1.0

0.9

0.5

0.0 0.8
-100 -50 0 50 100 150 200 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Fig.3 On-Resistance Variation with Fig.4 Breakdown Voltage Variation vs.

Temperature Temperature

* Notes ;
※ Notes :
1. Vds=30V 1. VGS = 0 V
2.250s Pulse test
Reverse Drain Current [A]

10
10

-55
ID(A)

150 ℃

150 25
IDR

℃
℃ ℃

25 ℃

1
2 4 6 8 1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS [V] VSD, Source-Drain Voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

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 MDF13N65B N-channel MOSFET 650V
5000
Ciss = Cgs + Cgd (Cds = shorted)
10 ※ Note : ID = 14.0A Coss = Cds + Cgd
Coss Crss = Cgd
130V 4000
325V
VGS, Gate-Source Voltage [V]

8
520V

Ciss

Capacitance [pF]
3000
6

2000
4
※ Notes ;
1. VGS = 0 V
2
1000 Crss 2. f = 1 MHz

0 0

0 10 20 30 40 50 60 1 10

QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

2
10
Operation in This Area
is Limited by R DS(on) 10 s
D=0.5
100 s
1
10 0
1 ms 10
0.2
ID, Drain Current [A]

Thermal Response

10 ms
1s 100 ms 0.1
Zθ JC(t),

10
0 DC 0.05

-1
0.02
10
0.01
-1
10 ※ Notes :
Duty Factor, D=t1/t2
Single Pulse PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
TJ=Max rated RΘ JC=3.4 /W ℃

TC=25℃
single pulse
-2
10 -2
-1 0 1 2 10
10 10 10 10 -5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
VDS, Drain-Source Voltage [V] t1, Rectangular Pulse Duration [sec]

Fig.9 Maximum Safe Operating Area Fig.10 Transient Thermal Response Curve

14
10000
single Pulse
RthJC = 3.4 /W ℃ 12

8000 TC = 25 ℃
ID, Drain Current [A]

10
Power (W)

6000 8

6
4000

2000
2

0 0
1E-5 1E-4 1E-3 0.01 0.1 1 10 25 50 75 100 125 150

TC, Case Temperature [ ]

Pulse Width (s)
℃

Fig.11 Single Pulse Maximum Power Fig.12 Maximum Drain Current vs. Case
Dissipation Temperature

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 MDF13N65B N-channel MOSFET 650V
Physical Dimensions

3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified

Symbol Min Nom Max

A 4.50 4.93
b 0.63 0.91
b1 1.15 1.47
C 0.33 0.63
D 15.47 16.13
E 9.60 10.71
e 2.54
F 2.34 2.84
G 6.48 6.90
L 12.24 13.72
L1 2.79 3.67
Q 2.52 2.96
Q1 3.10 3.50
￠R 3.00 3.55

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 MDF13N65B N-channel MOSFET 650V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Jun. 2011 Version 1.3 6 MagnaChip Semiconductor Ltd.