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Mid Infrared Biosensor Based On Bloch Surface Mode Excitation in Truncated One Dimensional Ternary Photonic Crystal Under Kretschmann Configuration
Mid Infrared Biosensor Based On Bloch Surface Mode Excitation in Truncated One Dimensional Ternary Photonic Crystal Under Kretschmann Configuration
https://doi.org/10.1007/s11468-020-01331-3
Received: 15 August 2020 / Accepted: 9 November 2020 / Published online: 11 January 2021
© Springer Science+Business Media, LLC, part of Springer Nature 2021
Abstract
We have theoretically investigated the performance of mid-infrared (mid-IR) sensitive biosensor constructed by truncated
one-dimensional (1D) ternary photonic crystal (TPC) on the prism base under Kretschmann configuration coupling technique.
The control over resonance wavelength (RW) of the excited Bloch surface modes (EBSMs) for the case of incident transverse
magnetic polarized electromagnetic waves (EMWs) has been shown. The band structures and the reflection spectra of the
considered model are computed using transfer matrix method (TMM). The variation in different design parameters of
the theoretically constructed biosensor, such as thickness of the truncation layer, refractive index of the sensing medium,
and number of unit cells in photonic crystal (PC), allows us to have good control over the resonance wavelengths in fixed
frequency regime of the PBGs. The excitation of BSMs is characterized by a dip in the reflectance spectra. The measured
sensitivity of the sensor is 10−3 orders of magnitude sensitive to the change in dc and dt values.
Keywords Bloch surface waves · Kretschmann configuration · Sensitivity · Ternary photonic crystal
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into real-life applications in the past two decades with regard to frequency domain is known as the molecular finger print
sensing applications in the growing fields of surface-enhanced region, the confinement of Bloch surface modes (BSMs)
Raman scattering (SERS) and optical biosensors. helps in design of sensors especially chemical sensor, trace
Though there are unlimited number of materials available gas sensor, and biological sensors, because for most of the
for design of biosensor, we have focused our attention in the molecules, the absorption pattern is well known which is due
mid-IR domain where only limited number of linear and non- to the fact that the vibrational energies of most of the molecules
linear materials are available. In this communication, we will match well with the incident photon energies in this frequency
be restricted( to confinement of BSWs in mid-IR ) frequency range [3]. It is also important to mention some other types of
domains 500 − 5000cm−1 or15 − 150THz as it offers BSWs that exist with only real part of Bloch wave vector, and
wide range of applications in various fields extending from hence, they do not lie inside the PBGs [16], i.e., EE (extending
nanomaterial sciences to chemical and biological sciences both in PC and surrounding medium which is transmitted), ED
[9]. Lots of research works related to BSM excitation have (extending in surrounding medium and decaying in PC which is
been done in visible [10, 11], near-IR [7, 12–14], and far-IR externally reflected), and DE (decaying in surrounding medium
[15] ranges. Least has been explored regarding excitation and extending in PC which is internally reflected) surface states.
of BSMs in mid-IR range and this is why we opted to work Throughout the paper, we will only discuss about the BSWs
in this frequency domain. The excited modes in mid-IR with complex Bloch wave vector, i.e., DD (decaying both in
range offer large potential applications towards design of PC and surrounding medium) surface states (called as BSMs).
sensors, optical devices, optical resonators, waveguides, etc.
Also, mid-IR range consists of two atmospheric windows Model and Material Specification
providing ease for optical and broadband communication.
The position of excited BSWs in the PBGs can be adjusted The theoretical model of considered biosensor is contrived from
either near the center or near the edges by varying the thickness truncated 1D TPC fabricated on the base of fused silica prism
of the add layer. This provides a good opportunity to have better of refractive index (R.I.) np = 1.445 [12] under Kretschmann
control over the confinement of BSWs (or Bloch modes) for configuration coupling technique. The analysis is done for the
suitable coupling of incident EMWs with BSWs depending incident TM-polarized EMWs.
upon the need of the appropriate application. Since mid-IR Figure 1 shows a truncated 1D TPC fabricated on the
prism base. The normalized wave vector along the interface is
β = np sin𝜃0. The periodicity of the TPC is terminated by the add
layer (dc). The add layer is exposed to the analyte or the sensing
medium on which the excited Bloch surface modes (EBSMs)
are supported with decaying fields normal to the xy−interface
plane. The PC structure (having periodicity Λ = d1 + d2) con-
sists of N number of unit cells, each comprising three layers of
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thickness dt, d2, and (d1 − dt ) having corresponding R.I. of n1, M11 + M22
n2, and n1, respectively.
cos(KΛ) = , (3)
2
The present work deals with BSM excitation and its control
over excitation frequency in mid-IR frequency domain using where K is defined as the Bloch wave number, M11 and M22
TPC structure. For this purpose, we have chosen two, air are the diagonal elements of the transfer matrix or unit cell trans-
stable and thermally stable, infrared transparent materials— lation matrix obtained after solving 2 × 2 TMM [29]. By apply-
Y2O3 (yttria) [17, 18] and B 4C (boron carbide) to construct the ing Bloch-Floquet theorem, the solution of Hill’s differential
TPC with the add layer made of Y 2O3. The physicochemical equation inside the periodic layered medium is obtained, which
properties of boron carbide highly depend on the atomic is superposition of two BSWs.
percentage of carbon (at.% of C). Depending upon the at.% The TMMs enable us to find the reflectance and transmit-
of C, boron carbide exists in both crystalline and amorphous tance spectra of the considered structure by employing the use
phase [19]. In the present model, we have considered its of a much simpler approach—the Abeles theory [29]. According
crystalline frame of network, which expands over a wide phase to this theory, a polarization-dependent matrix MP is
homogeneity range varying from 8.8 to 20at.% of C, i.e., B11C [ ( ) −i ( ) ]
cos 𝛿k sin 𝛿k
(boron-rich limit) to B4.3C (carbon-rich limit), respectively. MP = ( ) qk (4)
Therefore, the density and band gap both vary with carbon −iqk sin 𝛿k cos(𝛿 k )
concentration. B4C is the carbon-rich limit case (20at.% of
C—electron-rich composition) of the homogeneity range defined for each layer of the stratified structure and the char-
showing a very high absorption in the range of electronic acteristic matrix calculated for a single unit cell is
transition, i.e., 190 − 750nm. The amorphous phase of boron 3
∏
[ ]
M11 M12
carbide is attained by increasing the carbon content close to MC = MP ≡ (5)
M21 M22
50at.% of C, and further increasing the carbon content (above k
50at.%), the structure becomes highly graphitic.
where k = 1, 2, and 3 for layers of R.I. n1, n2, and n1, respec-
To elucidate, the optical properties of B 4C greatly depend
tively. The band structures of considered PC structure obtained
upon its preparation or fabrication technique which influences
using Eq. (3) are plotted in Fig. 2. Here, black region repre-
some of its properties like elastic modulus, enthalpy of forma-
sents allowed band and white region represents PBGs.
tion, specific weight, etc. [20–22]. It is the third hardest mate-
Then, the matrix MC is raised to the power N (N is the num-
rial after diamond and cubic boron nitride. The R.I. of B4C is
ber of unit cells considered in the PC) to obtain the TPC matrix
n2 = 3.2016 which is calculated using set of optical constants n
as:
and k in the infrared region by Kramers–Kronig dispersion rela-
tion at a wavelength of 15.4 μm [23–25] and the R.I. of Y 2O3 is [ ]N
MPC = MC (6)
n1 = 1.8427 at 4.85 μm [26, 27].
The final matrix (MF ) is obtained by separately multiplying
Formalism the dc layer matrix with the TPC matrix as
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( [ ]) ( ) ( )
m11 m12 | m11 + m12 qs qp − m21 + m22 qs |2
MF = MPC Mdc ≡
m21 m22 (7) |
R = |( ) ( )|
|
(8)
| m +m q q + m +m q |
| 11 12 s p 21 22 s |
The wave vector ( for
) each layer of the unit cell is defined
as 𝛿𝛼 = c n𝛼 d𝛼 cos 𝜃𝛼 and the angle at which light is inci-
𝜔
𝛼
sidered TPC-based biosensor is given by the formula, (3rd PBG) show three EBSMs localized at the analyte and
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TPC interface. The considered frequency range varies from BSWs have longer penetration length as compared with
( 2 × 1014 rad∕s to 3 × 1014 rad∕s ) 31THz to 48THz with SPPs. Therefore, EBSMs offer a good coupling efficiency
model parameters as d1 = 2𝜇m , d2 = 4𝜇m , and N = 11. for various types of sensing platforms.
Due to the coupler (prism), the wave vector of incident From the reflection spectra as shown in Fig. 4, we can
EMWs becomes greater than BSW wave vector which result say that the three excitation frequencies, ranging from
in coupling of incident EMWs with BSWs when(the incident ) 2.532 × 1014 rad∕s (near the center) to 2.566 × 1014 rad∕s
angle is greater than the critical angle 𝜃c = sin−1 ns ∕np . For (close to the edge), are a consequence of matching of Bloch
the present case, 𝜃c is calculated to be 43.7919 . We have wave vector and the incident EMW wave vector. As evident,
◦
considered incident angle of EMWs greater than 𝜃c . For the FWHM of the EBSMs increases that goes from center towards
sake of simplicity, we have initially considered the analyte the edge. So, a mode near the center gives good sensitivity.
to be air. The three computed dots in Fig. 3 correspond to The reflection dips indicate that the structure offers high trans-
three excitation frequencies (as shown in Fig. 4) for the value mittance or negligible reflection to a particular frequency
of dc = 0.3d1, keeping dt constant at 0.2d1, and is given as value for a particular angle of incidence. Depending upon the
−𝜔 = 2.532 × 1014 rad∕s for red dot, 𝜔 = 2.545 × 1014 rad∕s requirement of the application, we can appropriately choose
for blue dot, and 𝜔 = 2.566 × 1014 rad∕s for pink dot close the excitation frequency from Fig. 4 either close to the edge
to the upper edge of the PBGs. or close to the center of the PBGs. In the present analysis, we
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928 Plasmonics (2021) 16:923–932
have chosen 𝜔 = 2.545 × 1014 rad∕s (blue dot from Fig. 3) For the same incidence angle ( 52 ), we can further
◦
to show the effect of varying dc layer thickness on the per- study the spectral response of the sensor by varying the
formance of the sensor very near to the mid of the PBG. The R.I. of the analyte for the constant value of dc (= 0.3d1 )
magnetic field profile at 𝜔 = 2.545 × 1014 rad∕s has been plot- and dt (= 0.2d1 ) . From the reflectance curve in Fig. 8, it is
ted in Fig. 5 and field intensity |H|2 is plotted in Fig. 6. observed that the reflectance greatly increases from 8.68 to
Figure 7 shows EBSMs confined for different thickness of 51.88% as ns is varied from 1.170 to 1.191, respectively, in
the add layer while keeping the value of dt constant at 0.2d1. intervals of 0.003. So, as we go from ns = 1.170 to 1.191,
We observe that as the thickness of the dc layer increases the coupling becomes much weaker. Also, the change in
from 0.3d1 to 0.7d1, the resonance dip of the EBSMs shifts the R.I. of the analyte ( ns ) produces no shift in the reso-
toward lower frequency side or higher wavelength side. nance dip of the EBSMs.
Also, as dc increases, the reflectance increases from 3.20% If we carefully analyze Fig. 8, then it is observed that
(at dc = 0.3d1) to 57.69% (at dc = 0.7d1) implying that the there is change in full width at half maxima (FWHM) with
coupling between incident light and the BSM is becoming slight change in R.I. of analyte. As depicted in Fig. 9,
weaker. The sensitivity of the sensor based on the effect of FWHM increases with increase in ns values. So, this
thickness of add layer ( dc ) is given by Sdc = Δ𝜆∕Δdc . The (FWHM) can be used to monitor the sensing performance.
structure is sensitive to the change in dc value measured up It is observed that a lower value of FWHM establishes bet-
to 0.005. ter performance of the sensor.
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The set of data points shown in Fig. 9 is tabulated below the reflectance dips are observed to shift towards higher-
which quantifies FWMH with variation in the ns values. frequency side with increase in dt value from 0.2d1 to 0.4d1,
in step size of 0.05d1. It is clear that the coupling efficiency
ns values FWHM ns values FWHM becomes poor with increase in dt value because the reflec-
(𝜇m) (𝜇m)
tance significantly increases from 3.20% (at dt = 0.2d1) to
×10−4 ×10−4
44.70% (at dt = 0.4d1).
1.170 3 1.182 13 The sensitivity of the sensor (Sdt = Δ𝜆∕Δdt ) towards
1.173 6 1.185 15 the change in dt value is measured up to 0.001. One of
1.176 9 1.188 17 the important model parameter is the value of N (number
1.179 11 1.191 18 of unit cells) which also allows us to have superior con-
trol over the RW. The number of EBSMs increases as N
The measured quality factor (Q.F. = 𝜆0 ∕Δ𝜆 ) changes increases. This is well illustrated in Fig. 11. Consequently,
from 24, 687 to 4114 as ns increases from 1.170 to 1.191, we get a good option to choose desired BSM with needed
respectively. propagation lengths for different practical applications.
Further, it is also necessary to mention that control over The increment in the number of unit cell leads to
the RW can also be achieved by varying thickness of dt layer, increased number of EBSMs within the same PBGs.
keeping the value of dc constant. It is shown in Fig. 10 that
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