Chapter 4

Equilibrium

4.1 Exercise 1
Question
Calculate the intrinsic temperature Ti of Si, Ge and GaAs, doped with
ND = 1013 cm−3 undeep donors.

1. Consider first that EG , NC , NV remain constant. Use the following

values valid at 300K:

Si Ge GaAs
NC (cm−3 ) 2.8×1019 1.0×1019 4.7×1017
NV (cm−3 ) 1.0×1019 6.0×1018 7.0×1018
EG (eV) 1.124 0.663 1.423
2. Take the T-dependance of EG into account for Si and GaAs. For GaAs:

5.4 × 10−4 T 2
EG (eV) = 1.519 − . (4.1)
T + 204
The dependance for Si is in the course. For Si 1 iteration suffices, use
2 iterations for GaAs.

4.2 Exercise 2
Question
Determine EF , n and p of phosphorus doped Si at 300 K, with data:

EP = EC − 0.045 eV NP = 1 × 1015 cm−3 gP = 0.5

19
NC = 2.8 × 10 cm −3 NV = 1.0 × 10 cm19 −3 ni = 1 × 1010 cm−3
Do a graphical determination first. Then check which equations are valid
and calculate.

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CHAPTER 4. EQUILIBRIUM 2

4.3 Exercise 3
Question
A high-purity Ge crystal for fabrication of gamma-ray detectors has impu-
rities:

Al NAl = 3 × 1010 cm−3 EAl = EV + 11.2 meV

As NAs = 1 × 1010 cm−3 EAs = EC − 14.2 meV
Data for Ge:
NC (300K) = 1.0 × 1019 cm−3 (4.2)
NV (300K) = 6.0 × 1018 cm−3 (4.3)
4.774 × 10−4 T 2
EG (eV) = 0.7437 − . (4.4)
T + 235
Calculate EF , n, p, NA− , ND
+
at T = 80K, the operating temperature of
the detector (make a graphical sketch first).
Repeat for T = 300K.

4.4 Exercise 4
Question
Consider an n-type Si sample, doped with shallow donors of 1 × 1016 cm−3 .
The ionization-energy of the donors is 50meV, the degeneracy factor gD =
1/2.
Determine the position of the fermi-level when n = ND /3.

4.5 Exercise 5
Question
Determine the largest resistivity (minimum conductivity) for Si at 300K.
What is n and p in that case? How could one obtain this in practice?