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2sd2438 Ds en
2sd2438 Ds en
2SD2438
B
Darlington (7 0 Ω )
E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1587) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit
0.8±0.2
5.5±0.2
VCBO 160 V ICBO VCB=160V 100max µA 15.6±0.2
3.45 ±0.2
5.5
9.5±0.2
VEBO 5 V V(BR)CEO IC=30mA 150min V
23.0±0.3
IC 8 A hFE VCE=4V, IC=6A 5000min∗ ø3.3±0.2
a
IB 1 A VCE(sat) IC=6A, IB=6mA 2.5max V
1.6
b
3.0
PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=6mA 3.0max V
3.3
Tj 150 °C fT VCE=12V, IE=–1A 80typ MHz
1.75 0.8
16.2
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF 2.15
1.05 +0.2
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
-0.1
A
2. A
(V C E =4V)
0m
8m
Collector-Emitter Saturation Voltage V C E (sa t) (V )
5m
10mA
8 1. A
3 8
1.5m
2.
1. 3m A
1.0m A
6 6
0.8 mA 2
4 I C =8A 4
mp)
)
)
I C =6A
Temp
Temp
0.5mA
e Te
I C =4A
1
(Case
(Case
(Cas
2 2
125˚C
–30˚C
I B =0.3mA
25˚C
0 0 0
0 2 4 6 0.2 0.5 1 5 10 50 100 200 0 1 2 2.5
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
40000 50000 4
125˚C
DC C urrent G ain h FE
DC C urrent G ain h FE
Typ
25˚C
10000 10000
1
5000 –30˚C
5000
0.5
1000
10
s
10
M aximum Power Dissipa ti on P C (W)
100 0m
Typ DC s
W
5
Cut- off F req uenc y f T (MH Z )
60
ith
Collect or Cur ren t I C (A)
In
80
fin
ite
he
at
si
60 1 40
nk
0.5
40
Without Heatsink 20
Natural Cooling
20
0.1
Without Heatsink
3.5
0 0.05 0
–0.02 –0.1 –1 –8 3 5 10 50 100 200 0 50 100 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
152