TOSHIBA Leading Innovation >>> PRODUCT GUIDE Discrete IGBTs 2009-3, SEMICONDUCTORFeatures and Structure IGBT: Insulated Gate Bipolar Transistor 's combine the MOSFET advantage of high input impedance with the bipolar transi tage of high-voltage drive. conductivity modulation characteristics of a bipolar transistor make it ideal for load. applications that require high breakdown voltage and high current. iba offers a family of fast switching IGBTs, which are low in carrier injection and ination in carrier. B® Features of the Toshiba Discrete IGBTs ‘The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptiole power supply (UPS) systems, IH cookers, plasma display panels (PDPs),strabe flashes and so on, (1) IGBTs also featuring fast switching (2) Low collector-emitter saturation voltage even in the large current area (2) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications (4) High input impedance allows voltage drives, (5) Available in a variety of packages. ® Construction The basic structure of the planar IGBT consists of four layers (pnpn), as shown in the following figure. Low saturation voltage is achieved by using a pnp transistor to allow conductivity modulation during conduction. Unlike MOSFETs, the IGBT does not have an integral reverse diode, since the collector contact is made on the p* layer. > Planar Structure > Equivalent Circuit Clecer Enmier Ccector iter2 __IGBT Technical Overview Prior to the development of IGBTs, power MOSFETs were used for power amplifier applications which require high input impedance and fast switching. However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage increases. It is thus dificult to improve the conduction loss of power MOSFETs. On the other hand, the IGBT structure consists of a PNP bipolar transistor and a collector contact made on the p* layer. The IGBT has a low on-state voltage drop due to conductivity modulation. The following figure shows the VCE(sat) curve of a soft-switching 900.V IGBT. Toshiba has offered IGBTs featuring fast switching by using carrer lifetime control techniques. Now, Toshiba offers even faster IGBTs with optimized carrier injection into the collector Player. In the future, Toshiba will launch IGBTS with varied characteristics optimized for high-current-conduction and high-requency- switching applications. The improvements in IGBTs will be spurred by optimized waters, smaller pattern geometries and improved carrer lifetime control tachniques. > 900-V IGBT for Soft-Switching 28 figrssee: GTSRRD} 26 a : = 7 | Hi speed: GTSONSZ2ACTOOOV) rary) 7 3 21 =a g 2 ve j : Ao: {ow Vere GTEONo03 | & 2 r je + ge g . Z 16 <=> AF creonece 4 - ° a a2 03”*~«SMS=*~*C«iSSCSSC Exind) @Voc = 40 V, e=50A, Vos =20V, a= 100, C= 0.9 uF, L=90 nH B® Discrete IGBT Development Trends. alsa ino prove goons ee Year 2006) ea Eane IGBT Product List (Under develope 4 Part Numbering Scheme Game GT 60 M303 A -vesicn Table Lee5-1. General-Purpose Inverter The fast-switching (FS) series, a new addition to our third-generation IGBTs, features high ruggedness which helps to improve the energy efficiency of electronic equipment. oer) ior Co oe Inverters Conditioners ines te IGBT Trend > For general-purpose inverters, ur 3rd generation low-loss and low-noise IGBTs are ideal for inverter applications to reduce switching loss and thus improve energy efficiency. The following graphs compare the thermal and turn-on characteristics of our ard generation IGBTs and '500.V MOSFETs. > IC - Vor Temperature Characteristics > Turn-On Waveform Low saturation voage with ninimal temperature dependence Fast overse-rocavery characteristics duo to built-in lode win optimal charactenstes so Cp 7] vee, ane) (au |\, oe i 0 * iil - @vse=15V aOSEE 3 2) Bee 3 ersos0% 28 3 Bees, ge | |i | MOSFET (500 50 A): 3° | qe ec Nanaee. Versey Tre coe Fe Sic = “a As 2484 cote - mite Voge, Vez) icv > Power Loss vs. Carrier Frequency Characteristics ‘Simulation data for inverter applications 80 a rr Lose wy fars0g0) ed al Taree 7 MOSFET (50050: ‘5 ma a5e = 2 16 ‘camer Froquoey cz)5-1 General-Purpose Inverter eno > Fast-Switching (FS) Series Compared to the third-generation highly rugged series, the FS series is optimized for switching speed, reducing the total ‘witching loss (Ean + Eoff) by 20% (according to Teshiba's comparative test). > Typical Waveforms 6T20J321(4th generation, FS Series) 6720J301(3rd generation) nyaeeat ed T ve (oe Ve E Tet E t los tt ai (os 05 mic (Nee: 50 Vi, 5 ey, Va: 10 Vii Loss: 02 mil, 02 yi) Reduced switching loss of fast-switching IGBTs in comparison with high ruggedness IGBTs Test condition: IC = 20 A, Ve = 15 V, RG = 839, Ta = 125°C, with inductive load, Ver = 800 V > Turn-On Loss > Turn-Off Loss. a <€ oe & Fast-switching High ruggedness: Fast-switching High ruggedness | eer = Se GT20J321 GT20J301 GT204321 GT204301LL > For general-purpose inverters > Circuit Configurations singe a 2 _§| Ks ® 600-V and 1200-V IGBTs (3rd Generation) ‘esi Mon ¥ GTOOIe 1200, 10 2 | 10. 10H) * ‘fore GT10q301 | 1200 2 qosPN) || Balin RD 15 [or] | arisawe 00 isa |W Tom) foe “etisaaot |200/ 1s | 20 Toor) = Balkin FRO a [ore] ef Grasaioe 0/2) 2 Town foe @t250301 | 1200 5) | 200 TOsPUH) | BultinFRD/ 21 2s | tS O18 LT Grsseor sso 8 oomuS sau neRD 21s ts ore teva 600 10 | 45 | To220su | SWD [auitinero| 21s | 15 [ors) | GTio901 60010 | 2 | oo | Toor) | - | amneno| at 0) i as GT10N303 | soo | 10 | 20 | a0 | TOz0WS | | auleneRD| 21 10 | 15 [ors) u | Griowera aio | 80 ToomsM SMO ButnrRD| 21-10, 18/078 L [etisse01 [eo | 15 | 20 | 95 | toz0ue | - [amnrao[ eras [1s [ow]. | Grisso is} @ [70] Toone | ——feurneno [21 e_[ isons GTisssit 60018 | a0 | 70 To2e0sM | SMD /aukineRD | 21 1s 1s fais) L Greaves 0 0 | | Toa) | |e fat wwe ait GT209901 | 600 | 20 | 40 | 190 | TOSPIN) | | BullimFRD| 21) 20 | tS [ots Lk Goo 600 20 | | ves | Too) | |e fat we aL GT90J901_ | 600 | 20 | 69 | 155 | TOaPIN) | - | BikinFAO| 21 | 90 | 15 [ors) L | GrsosI02 | 600 50-100} aw | Toon | |e fet we ae [rets0Ja01 | coo | so | 10 | 200 | Tospun) | — [eaitmeno| 21) so | 16 [ow ) | BEL EE crane sw co so] 1s toms = 6 ar sv ws asm Ponmnen '® 600-V Fast-Switching IGBTs (4th Generation) (F5:Faet Swing) Gti0sa21 ToZ20N ‘tin FRO Gtisia21 To-z20s Buln FAD Grisis31 7o.2205u ulin FRD ow Vets) GT20Ja21 To-z20s ‘tin FAD GT305121 TOsPIN) . GT30N126 TOSPINIS * TEsaon Package GT30N324 OPN) Baitin FRO Gts0s121 TOSPILH) . GT50d525) TOSPILH) Buln FRO +1 #:singe FFD: Fost Recovery Diode 2 fsRenetva oad Ls Inductive fa5-2. Soft-Switching Applications Static inverters in IH cooktops, IH rice cookers and microwave ovens utilize a soft-switching technique which exhibits low switching loss. Toshiba offers IGBTs suitable for soft-switching applications. Velage Resonance ‘ss a ‘Vers = 900 V to 1000 V 100V to 120 lo=15A1060A \Vces = 1200 Vo 1500 V 200V to 240 V oa 100Vto 240LL > For soit switching > Circuit Configurations single cotecor BURA FRD 6 Cotectr ® IGBTs for Soft-Switching Applications Abeolute Maximum Ratings Veen TYP. Typ ati | g,| © | © | 1 | Tomas | + | 18 | a | 15 | 0x0 GTsocs21 = [so | sao | roar sa | @ [5 [om Graosaz2 w@ fe | | carpys 21 | 9 | 1s | 02s (Gre5ss21 7 | wo | 7 ia)» | s [ow ‘ers0us21 | 10 | 10 21 | 40 [15 [015 | [Fastening ‘craasa22 70 | 10 | 10 | T0239 20 | «0 | 1s [oo 0 | @ | 20 | «0 [15 [005 | [sagem rsoeaz | .,, [50 | 100 | 10 | Toarai |amnrm [21 | s0 | 15 [025 GTs0s222H © | 10 | 19 22| | 15 [or |Fastomong cTs0ss27 0 | 10 | 10 | T0209 19 |» [15 [ow crsosa2a 2 | wo) “0 20 | 0 | 15 [010 | |Festonsig cTe0us21 @ | mo | a 155 |e | 15 | 20 ‘GTeasa2a @ | wo | 1 | rosa lo [slow , (GT600929H | wo | 1 21 [|e for] " [Feemaig cTists21 1 | = | 6 | Toms v8 | 15 | | om ‘eTsoMa22 » | 0 | 18 | Toa 21 | @ | 1 foas GT6oMs03 | 900 | | 20 | 170 21 | © | 1 | 02s (GT6oM323 | 120 200 mma 23 | 6 | 15 | 009 Fast scring| ‘GTeoma28 © | | 16 165) © | 6 [ost [sng ‘GTsoNs21 so | wo | 16 aunarwo| 25 | eo | 15 | 025 GTSONS22A so | 120 156, roe 22 | @ | 15 | o10 [Fast swecring| GTsoNs26 | 1000/ «0 | 120 | iso sa [60 | 15 [or] [emcee ‘GToNs21 @ | wo | 1m 2a | 0 | 15 | 025 ‘GTEONS22 7 | 10 | 20 | 24] 40 [15 fou [Fatman] Gtaoos2t | 200| «0 | wm | 17 | T03°A 28 | © | 15 | oa Gracra02 [1500/0 | @ | 20 | To2PUH a7 | @ | 16 [oz | | Honvers 1 ¢:Sng Fast Raoovery Diode FWD: Fee Wheeing Dede “2 AcResetve one Since load (i : Under development5-2. Soft-Switching Applications > Comparisons Between Hard and Soft Switching (diagrams shown only as a guide) = (arcu, Towvetage sn Figh-atage locus Vee Ver SOA Loous for Soft Switching Vee Vor te le ‘Switching Characorstics| ‘Gurren Resonance Voliage Resonance (Gea) (Earp) xarel) Strobe Flash Applications Strobe flash control is now prevalent in digital still cameras. Package sizes are getting smaller, and logic levels are increasingly used to represent the gate drive voltage. Toshiba offers ‘compact IGBTs featuring low gate drive voltage. As a voltage-controlled device, the IGBT requires only a few components for drive circuit. IGBTs require fewer components for the strobe flash circuit (compared to SCRs).. ™ Strobe flash IGBTs are capable of switching large currents. Deen! Sr ees =10-5-3 Strobe Flash Applications > For strobe flashes B® 2.5-V to 4.0-V Gate Drive Series ‘The IGBT can operate with a gate drive voltage of 2.5 V to 4.0 V. The common 3.3-V or 5-V internal power supply in a camera ‘can be used as a gate drive power supply to simplify the power supply circuitry. A zener diode is included between the gate ‘and emitter to provide ESD surge protection. > Example of an IGBT Gate Drive Circuit (3.3-V Power Supply) av ower supply Feconant capacitor IGeT GTeGi34 av =o ® 3.3-V Power Supply 400/904 a4 25V/120A 08 sons" 7 generation GT9G136 40071508 35 Sy/1508 u ‘TSSOP-8" —_Stigenaraton GTaGias 200/450 24 2SVIIS0A 14 TSSOP-87 | 6h generation |: Uneer dovtpment ™® 5-V Power Supply aveatse OVEDA 23 s0¥/1508 i sors" | sthgearaton cTacise wOVITEOR 28 ZOVIIBOK 1 or i genrten ctiocisi | _400v/2008 23 s0V/m04 19 sora | stigeneaion “Boudcomicon ar cascor "2 Bou commcton cape sera seta coe he § Ls coe ener smior || emma gta cety uaa At ho emittortorminals should be connoctad togathor. ws ate5-4 Plasma Display Panel Applications peeue ee Parallel MOSFETs have been used for the drive circuitry of plasma display panels (POPs). Recently, however, IGBTs are commonly used in large current applications due to their superior current conduction capability. > Example of a Plasma Display Panel Drive Circuit POP (Sustan circuit) Enorgy recovery circuit) ( Sustain circuit ‘Separation circuit y > For plasma display panels ™® 300-V IGBTs ‘GTs0F 122 OVI 08 29 (@1204) 3 ‘To2208iS | Se generation ‘GTSOF23, 500 7200 8 211208) 25 To.220sis |e goneston ‘GTasFi22 00 v72008—| 27 @ 120A) —s Tozaisis |S peeraton | ‘GrasF23. S00 72008 2a @i20A) 2% To-208i5 SP goreraton ‘GTasFi24 ‘300 V/2008 | 2.1 (@120) t 2 7o.2208'8 | Sth gonoration ‘GTasF125, 00/200 8 15 @120) 2 To.220sis | sir gonerston ‘GrasF127 0072008 —| TS t@1204) = T0.2206i6 | Ge generaton (GTasF 131 300 V/ 2004 211208) ‘00 Tozeis | stgeetaion = @ 008 ® 400-V IGBTs a ee ee a00VI 1208" 26 @120A) 25 To220sIs ___Sergeneston GT30G123 430V/ 2008 | (22 (@120A) T 28 To-2208IS | 6th generation Grascvz2 00 7200.8 29 91204) 25 ‘To:a08i6 Fe generation Grasaiz3 waa v7200% —] 26 120A) as "To:2208i8 | Bh generation Grasctzs 00/2004 2a1@1a08) 2 70.2208'5 | str gereraton rasctzs 00/2008 | Te(@ia0A) i) Touensis | seigenerston Grasaiz7 0072004 IELY 2 "To:20816 Ee gereston GTasG131 400/208 | 23 @120A) L 160 To.220sM_—_| 6 generaion S@t00se ™® 600-V IGBTs craost24 00/2008 2A (@120A) 2 TOR0SIS SP geneaton =12-6 Package Dimensions6 Package Dimensions7 Final-Phase and Obsolete Products ‘The following products are in stock but are being phased out of production, The recommended replacements that continue to be available are listed in the right-hand column, However, the characteristics of the recommended replacements may not be ‘exactly the same as those of the final-phase and obsolete products. Before using a recommended replacement, be sure to check that i is suitable for use under the intended operating conditions. m | dct [Ratefear ee [etthelm Temee| 1800 | 30 ‘MGsoMIALT | 500 | 50 | GTeonoc3 | 500 so) TORILR) ‘gTaoM01 oe OC = 2 GraoMs01 coo 40 “Torun | GTeowaog | 900 ——e)—SCTOSHILEN GTaoasz2 | i200] 39 Tosem) | @Taoaa: iz] 42 | Tos ‘GTaoasz3 | i200 | 8 Tose | GTaoaszi | 20a Toh.) GTa0T101 1500 | 40) Foray = -— | GT20T301 ‘soo | 40 To-ar(tw) | @raots02 | 1500/40 TO-SP(LH) GT=0L101 soo | 0 Tose) | GTeowGOS 900 TOLD Grsontio1 soo | 50 Toei) | GTeoMs03| 900 eo TOamLH Grs0a101 200 | 0 W " = = Srs0st01 ‘ieo0_| 80 ” = a ewichog —STSOTIOT 1500 | 80 " = = = = oso amegng __ STSOSIOY 600 | 60 Tose) GTaoJIIB | soo) TOSHILEN ‘Gre0da22 0060) Topi) | GTeouso1 60060 TOaFIUA, ‘Greowio1 soo| 60 Tose) | GTeoM03_ | 900 a) TOAPILH ‘GTeowio2 800 | 60 Tose) GTe0NG03 90 TOILE ‘GTeowi03 soo | 60 Tose) GTeow03 | 9008) TOILED ‘GTeomioa | so | 60 Tose) | GTeowgos 900 TOSILIN ‘GTeOMI05 so | 60 To-3e(t) | GTeoM303_| 900 60. ToaPILH) GTeohia01 900 [60 to-setn)—GTeonta03 | 900) 80) To-sR ‘GTeoM302 soo, 60, Torun) | GTeowG03_—_| 900 | 60 ToL ‘GTe0N305 [so | 60 Fort) | Grsos03 | 900 eo rosie ‘GreoNs22 860 | 60 To-aP(LH) | GT6ONS2i [1000 —-60__|TO-SP(LH) {GTeoNs23 | 1050 | 60) FosPiumy) | GTe0Ns22 | i000) sr) rosin ‘Gre0i01 0 | 80 Tose) | GTeosio1@ | 00a) TOSPLH ‘GTa0Ji018—|—e00 | 80) FOP | GTaovio18 | 600) ao TosRiLey Gresi01 0 3 Toons | GT 10908 e010 | To2a0s ‘Greui02 600 8 To-zaosu | GTi0s312 0010 | Toons Grantor i000_| 6 TO-sFIw) | —@TIQI1 | 120010 ToP™) Gear01 200 | 8 Tosp | GToar1 | 1200100) ‘GTaqi02 i200 | 8 Tozatsit = - ° 0 {200 | 10} Toseisi = E =i Grissi01 coo {is Tospm) | GTz0/101 eo 20 TO-sP() Genetahpupose T1502 00 is) Tozzowis | GT15 901 0015 | Tozaons ae Grissi03 00 | 18 Tozmsu | GTisusit eo) 15 | To-za0sm Gencenpupase |_STISNIOL i000] 6 TOP | _@T1sQ102 | 120018] TO-2P™) : GI15a10 200 | 18 Tose Grisaiog | 120015 TOP imeners Gr 15031t 200 [45] Toseesan = = 2 -"* GT204511, 600) 20) To-ae(eM) | = = soo [ 35 To-sP(N) | GT90NI2 oo 30re-sre Gr25,101, 00_| 25 | Tei a0 30, TOP 60025) To-aPeNI 00/30 0-28() Gr2sai01 1200 | 25 ToseuH) 12025 | ToarLi G130311, ‘600 [30 Tears) = ln Grs0s101, 00 | 0 TO-3PIL) os TOR ‘GTsGi01 00 a0 putea] NP = ain #00. |130(pussg) DP - = = ‘@r5G103 400___ [130 puced)| OP | ‘GTaGi01 400 _—|*90 pulsed) NPM #00. |350(pusea)) Pu = = ‘GraGi03 400_— [160 paced) OP = GT10G101 400___| 120 pusea)|—To-zzos | 5 t ae Griogioz | 400 | iso\pucesy—To-220NIs = - = criocne |) foe teem | : = GT20G101 400 [730 puced)|——TO-220FL = = = Grz0g102 [400 | Too piso) TOF | Gr2sc10} 400 | 0ipulsed)—TO-a20¢L = = = Gt2sGioz | 400. | 180 puced) | TO-220FL | Grs0ci01 400 [700(pusea, TOs) | = = Gisoctog | 400 /1oalpuiseg) Toe) = = = Gr7scint 400__[160(puced) TO = = ‘Gr200101 20] 20 TO3AIU) = 5 = = Audoemps | @tzop201— | 250 | 20 roa) | = = 15-OVERSEAS SUBSIDIARIES AND AFFILIATES ps etoenner 01203 en arenes Tosh Eeewoies Europe GmbH Tesibe Ewes AL BEaRAE Conan ne. ear eee esque ca See oat nas oa recom Saka SAREE ial canon Pearce a Sacer SSE rates serve Bing Gwe ietoes USA Ta (ae T24812 Foe (14S “Th (@10}esD 87 Fax OIORBODSTST Ae hae yon conan ee caies aa Seer: RAE ONO EA oon raar ie i eoneerias ‘lng Oticn speemrmma oaecs 2 sesemencaketem, a EET tes Ore Galton See. fone becrenes or eo ec creegemen | SUREMENT. 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