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No?2 > MECHANICALPR ES * —
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eee oc)aQnai. ™ TIC MMARD MAGNETIC MATERIALS
ser Cidhysreyisis LooP
4 Natron toop > Fat loop
LMagnetism
(ily Resi
__ Gi) Magnetization ¢ Demat gnenzarion —
My Eeasyto mi magnetize >it 0 “to magnehee
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> Suoctances tat undeigo .. || F Substances winien breatc just
plastfe deformation Unrithey || atter elastic Vimittsteached are
byat_are Called ‘eluchie called byitie Substances.
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Aemprature. a prescuve -
GiiJExampie
Glass ,infgn carbon steel
and absoib ane. = COVNESEY
| Auctite-materials fall atrer significant
absorbed ene ene ain | plastic strain and absorb more energy,@AIQTALE 216) > TNCRERSING CONDUCINITY OF A
SEMI CONDUCTOR +
1) ing: Inky ducing impuvittes wMrvsemicond uUclors
Coping with conor impuritres Ceq Pnospnorous) sneleases
etecyon Gey) lation enhancing eonauchity_ninite ace pts
impurities Ceq booron)ereate holes Centyilouti toconductivity
EMPYAHUVE : Raising tempratu ores elecTON. a]
NobiLity simproving, cond uctivity,
Kia Notag € Apply a voltage. AN exrernar eeenio“ Held _
Can iMuence Charge carriers .
tv) Reducing defects: minimizngenysiar defects
fn the semiconductor material improves carrier mobility
DCONCLUSION! aut avove mentened procedures cana
used toemhane conductivity v
QnolO: Yes,the'e wi be Qcitgnt ditlerence in length of
A 2OMeteY See) Gride we standing hor’ nd
ver Hicay
| PEXPLANATION : —=
In VWereicat Position: Sma avea wv
iccuojecLed 40 Stix _,SHregs will belnige|_| |
rand fican cause S\fgnt decrease fh length horizontal
lascompared to aviginal engi). verica\
GiAN Howzontal Positions Large area fs subjected to _
shes. Thus Shes: WAI Be so smauetnat approximately mo _
change occurs in its Lenay tant
2 . z wef
2mamem akan: \shess= Ger \ oy swesc strate
ONCLUSION: Shess eaqusas change mn engin FonvidePods 2ADVENTA E OFUSING SuPECONDULTOR \
neice Sxq SUpey cond utaors ensuve a siabre
magneric Held enhancing precicfen and velia uty of MRL
\ ICeENCYs Zero elechiical resiciance fn ail
Conduaors Minimizes energy concumprtion making_™
Machines more energy-efAcient and cost elective. 4
il) proved Image Quality: Intense magne lic FACS
Jenerared by SUPC Tasmduciais ehhance fMage_ clang.
Cv) Compact Designs: Superemnducting agpelyen2 enable
Smaner and move ty mnobile MRE maching
adfubienis magnetic tield eure ngih veducing €tines
vi tcal Ra mentss superconductive _|
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