FQA24N50 — N-Channel QFET® MOSFET

June 2014

FQA24N50
N-Channel QFET® MOSFET
500 V, 24 A, 200 mΩ
Features Description
• 24 A, 500 V, RDS(on) = 200 mΩ (Max.) @ VGS = 10 V, ID = 12 A These N-Channel enhancement mode power field effect
• Low Gate Charge (Typ. 90 nC) transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
• Low Crss (Typ. 55 pF)
This advanced technology has been especially tailored to
• 100% Avalanche Tested minimize on-state resistance, provide superior switching
• RoHS compliant performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switch mode power supply, power factor correction,
electronic lamp ballast based on half bridge.

G
G
D TO-3PN
S
S

Absolute Maximum Ratings TC = 25°C unless otherwise noted.

Symbol Parameter FQA24N50 Unit

VDSS Drain-Source Voltage 500 V
ID Drain Current - Continuous (TC = 25°C) 24 A
- Continuous (TC = 100°C) 15.2 A
IDM Drain Current - Pulsed (Note 1) 96 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 1100 mJ
IAR Avalanche Current (Note 1) 24 A
EAR Repetitive Avalanche Energy (Note 1) 29 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 290 W
- Derate above 25°C 2.33 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering,
TL 300 °C
1/8" from Case for 5 Seconds

Thermal Characteristics
Symbol Parameter Typ. Max. Unit
RθJC Thermal Resistance, Junction-to-Case -- 0.43 °C/W
RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W

©2000 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQA24N50 Rev. C0
 FQA24N50 — N-Channel QFET® MOSFET
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FQA24N50 FQA24N50 TO-3PN Tube N/A N/A 30 units

Electrical Characteristics TC = 25°C unless otherwise noted.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 500 -- -- V
ΔBVDSS/ Breakdown Voltage Temperature Coeffi-
ID = 250 μA, Referenced to 25°C -- 0.53 -- V/°C
ΔTJ cient
IDSS VDS = 500 V, VGS = 0 V -- -- 1 μA
Zero Gate Voltage Drain Current
VDS = 400 V, TC = 125°C -- -- 10 μA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 3.0 -- 5.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 12 A -- 0.156 0.2 Ω
On-Resistance
gFS Forward Transconductance VDS = 50 V, ID = 12 A -- 22 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 3500 4500 pF
Coss Output Capacitance f = 1.0 MHz -- 520 670 pF
Crss Reverse Transfer Capacitance -- 55 70 pF

Switching Characteristics
td(on) Turn-On Delay Time -- 80 170 ns
VDD = 250 V, ID = 24 A,
tr Turn-On Rise Time -- 250 500 ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 200 400 ns
(Note 4)
tf Turn-Off Fall Time -- 155 320 ns
Qg Total Gate Charge VDS = 400 V, ID = 24 A, -- 90 120 nC
Qgs Gate-Source Charge VGS = 10 V -- 23 -- nC
Qgd Gate-Drain Charge (Note 4) -- 44 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 24 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 96 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 24 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 24 A, -- 400 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/μs -- 4.3 -- μC
Notes :
1. Repetitive rating : pulse width limited by maximum junction temperature.
2. L = 3.4 mH, IAS = 24 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 24 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.

©2000 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FQA24N50 Rev. C0
 FQA24N50 — N-Channel QFET® MOSFET
Typical Characteristics

VGS
Top : 15 V
10 V
8.0 V
7.0 V
6.5 V

ID , Drain Current [A]

ID , Drain Current [A]

6.0 V
Bottom : 5.5 V 10
1

1
10 150℃

25℃

10
0
-55℃

0
10 ※ Notes :
※ Notes :
1. 250μs Pulse Test 1. VDS = 50V
2. TC = 25℃ 2. 250μs Pulse Test

-1
10
10
-1
10
0
10
1
2 4 6 8 10
VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

0.6
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance

0.5
VGS = 10V

0.4 10
1
RDS(on) [Ω],

VGS = 20V

0.3

0.2 10
0

150℃ 25℃
※ Notes :
0.1 1. VGS = 0V
※ Note : TJ = 25℃ 2. 250μs Pulse Test

0.0 -1
0 20 40 60 80 100 120 10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
ID , Drain Current [A] VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature

7000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd VDS = 100V
6000
10
VDS = 250V
VGS, Gate-Source Voltage [V]

5000 Ciss VDS = 400V

8
Capacitance [pF]

4000 Coss
6

3000

4
2000 ※ Notes :
Crss 1. VGS = 0 V
2. f = 1 MHz
2
1000
※ Note : ID = 24 A

0 0
-1 0 1 0 20 40 60 80 100
10 10 10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

©2000 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FQA24N50 Rev. C0
 FQA24N50 — N-Channel QFET® MOSFET
Typical Characteristics (Continued)

1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0

1.0 1.5

1.0

0.9 ※ Notes :
1. VGS = 0 V ※ Notes :
2. ID = 250 μA 0.5 1. VGS = 10 V
2. ID = 12 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

25
Operation in This Area
is Limited by R DS(on)

10
2 20
10 μs
ID, Drain Current [A]

ID, Drain Current [A]

100 μs
1 ms 15
10
1 10 ms
DC
10

0
10
※ Notes :
o 5
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10 0
10
0
10
1
10
2 3
10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

D = 0 .5
Zθ JC(t), Thermal Response

※ N o te s :
-1
10 0 .2 1 . Z θ J C ( t) = 0 .4 3 ℃ /W M a x .
2 . D u ty F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .1

0 .0 5
PDM
0 .0 2
t1
0 .0 1
t2
-2
10 s in g le p u ls e

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11. Transient Thermal Response Curve

©2000 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FQA24N50 Rev. C0
 FQA24N50 — N-Channel QFET® MOSFET
Figure 12. Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
IG = const.
3mA

Charge

Figure 13. Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
V
10V
GS
DUT
td(on) tr td(off)
tf
t on t off

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

V
10V
GS
GS DUT VDD VDS (t)
tp
tp Time

©2000 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FQA24N50 Rev. C0
 FQA24N50 — N-Channel QFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

©2000 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FQA24N50 Rev. C0
 FQA24N50 — N-Channel QFET® MOSFET
Mechanical Dimensions

Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65

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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003

©2000 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FQA24N50 Rev. C0
 FQA24N50 — N-Channel QFET® MOSFET
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Datasheet contains the design specifications for product development. Specifications
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Rev. I68
©2000 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com
FQA24N50 Rev. C0