7MBP35VDA120-50 4kfkwq6emd

http://www.fujielectric.
com/products/semiconductor/
7MBP35VDA120-50 IGBT Modules
IGBT MODULE (V series)

1200V / 35A / IPM
Features
• Temperature protection provided by directly detecting
the junction temperature of the IGBTs
• Low power loss and soft switching
• High performance and high reliability IGBT with overheating
protection
• Higher reliability because of a big decrease in number of
parts in built-in control circuit
Maximum Ratings and Characteristics

Absolute Maximum Ratings (TC =25ºC, VCC =15V unless otherwise specified)
Items Symbol Min. Max. Units
Collector-Emitter Voltage (*1) VCES 0 1200 V
Short Circuit Voltage VSC 400 800 V
DC IC - 35 A
Inverter
Collector Current 1ms Icp - 70 A

Duty=100% (*2) -IC - 35 A
Collector Power Dissipation 1 device (*3) PC - 192 W
DC IC - 15 A
Collector Current
1ms Icp - 30 A
Brake
Forward Current of Diode IF - 15 A

Collector Power Dissipation 1 device (*3) PC - 111 W
Supply Voltage of Pre-Driver (*4) VCC -0.5 20 V
Input Signal Voltage (*5) Vin -0.5 VCC+0.5 V
Alarm Signal Voltage (*6) VALM -0.5 VCC V
Alarm Signal Current (*7) IALM - 20 mA
Junction Temperature Tj - 150 ºC
Operating Case Temperature Topr -20 110 ºC
Storage Temperature Tstg -40 125 ºC
Solder Temperature (*8) Tsol - 260 ºC
Isolating Voltage (*9) Viso - AC2500 Vrms
Terminal (M4)
Screw Torque - - 1.7 Nm
Mounting (M4)
Note *1: VCES shall be applied to the input voltage between terminal P-(U,V, W) and (U,V, W, B)-N.
Note *2: Duty=125ºC/Rth(j-c)D /(I F×VF Max.)×100
Note *3: PC=125ºC/Rth(j-c)Q (Inverter & Brake)
Note *4: VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13.
Note *5: Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 15~18 and 13.
Note *6: VALM shall be applied to the voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 19 and 13.
Note *7: I ALM shall be applied to the input current to terminal No.2,6,10 and 19.
Note *8: Immersion time 10±1sec. 1time.
Note *9: Terminal to base, 50/60Hz sine wave 1min. All terminals should be connected together during the test.
1 1419a
MARCH 2014
http://www.fujielectric.com/products/semiconductor/
Electrical Characteristics (Tj =25ºC, VCC =15V unless otherwise specified)

Items Symbol Conditions Min. Typ. Max. Units
Collector Current at off signal input ICES VCE=1200V - - 1.0 mA
Terminal - - 2.20 V
Inverter
Collector-Emitter saturation voltage VCE(sat) IC =35A

Chip - 1.70 - V
Terminal - - 2.60 V
Forward voltage of FWD VF IF=35A
Chip - 2.10 - V
Collector Current at off signal input ICES VCE=1200V - - 1.0 mA
Terminal - - 2.05 V
Collector-Emitter saturation voltage VCE(sat) IC =15A
Brake
Chip - 1.70 - V
Terminal - - 2.50 V
Forward voltage of FWD VF IF=15A
Chip - 2.10 - V
ton 1.1 - - µs
VDC =600V, Tj =125ºC, IC =35A
toff - - 2.1 µs
Switching time
trr VDC =600V, IF=35A - - 0.3 µs
Supply current of P-side pre-driver (per one unit) Iccp Switching Frequency= 0-15kHz - - 12 mA
Supply current of N-side pre-driver Iccn TC =-20~110ºC - - 46 mA
Vinth(on) ON 1.2 1.4 1.6 V
Input signal threshold voltage Vin -GND
Vinth(off) OFF 1.5 1.7 1.9 V
Over Current Protection Inverter 53 - - A
IOC Tj =125ºC
Level Brake 23 - - A
Over Current Protection Delay time tdOC Tj =125ºC - 5 - µs
Short Circuit Protection Delay time tSC Tj =125ºC - 2 3 µs
IGBT Chips Over Heating Protection Temperature Level TjOH Surface of IGBT Chips 150 - - ºC
Over Heating Protection Hysteresis TjH - 20 - ºC
Under Voltage Protection Level VUV 11.0 - 12.5 V
Under Voltage Protection Hysteresis VH 0.2 0.5 - V
tALM(OC) 1.0 2.0 2.4 ms
ALM-GND
Alarm Signal Hold Time tALM(UV) VCC 10V 2.5 4.0 4.9 ms
TC =-20~110ºC
tALM(TjOH) 5.0 8.0 11.0 ms
Resistance for current limit RALM 960 1265 1570 Ω
Thermal Characteristics (TC = 25ºC)

Items Symbol Min. Typ. Max. Units
IGBT Rth(j-c)Q - - 0.65 °C/W
Inverter
FWD Rth(j-c)D - - 0.95 °C/W
Junction to Case Thermal Resistance (*10)
IGBT Rth(j-c)Q - - 1.13 °C/W
Brake
FWD Rth(j-c)D - - 1.45 °C/W
Case to Fin Thermal Resistance with Compound Rth(c-f) - 0.05 - °C/W
Note *10: For 1device, the measurement point of the case is just under the chip.
Noise Immunity (VDC =600V, VCC =15V)

Items Conditions Min. Typ. Max. Units
Pulse width 1μs, polarity ±, 10 min.
Common mode rectangular noise ±2.0 - - kV
Judge : no over-current, no miss operating
Recommended Operating Conditions

DC Bus Voltage VDC - - 800 V
Power Supply Voltage of Pre-Driver VCC 13.5 15.0 16.5 V
Switching frequency of IPM fSW - - 20 kHz
Arm shoot through blocking time for IPM's input signal tdead 1.0 - - µs
Screw Torque (M4) - 1.3 - 1.7 Nm
Weight
Weight Wt - 290 - g
2
Block Diagram
VccU ④ P
VinU ③
Pre-Driver
ALMU ②
RALM
GNDU ① U
VccV ⑧
VinV ⑦
Pre-Driver
ALM V ⑥
RALM
GNDV ⑤ V
VccW ⑫
VinW ⑪
Pre-Driver
ALM W ⑩
RALM
GNDW ⑨ W
Vcc ⑭
VinX ⑯
Pre-Driver
GND ⑬
VinY ⑰
Pre-Driver
VinZ ⑱
Pre-Driver
VinDB ⑮
Pre-Driver
ALM ⑲ N
RALM
Pre-drivers include following functions

1. Amplifier for driver
2. Short circuit protection
3. Under voltage lockout circuit
4. Over current protection
5. IGBT chip over heating protection
3
Characteristics (Representative)
Power supply current vs. Switching frequency Input signal threshold voltage
T j= 25℃(typ.) vs. Power supply voltage (typ.)
50 3
N-side
P-side TC =25～125℃
VCC =17V 2.5
40 VCC =15V
VCC =13V
Power supply current : ICC [ mA ]
Input signal threshold voltage :

2
30 Vinth(off)
Vinth(on),Vinth(off) [ V ]
1.5
Vinth(on)
20
1
VCC =17V
10 VCC =15V
0.5
VCC =13V
0 0
0 5 10 15 20 25 12 13 14 15 16 17 18
Switchig frequency ： fSW [ kHz ] Power supply voltage ： VCC [ V ]
Under voltage vs. Junction temperature (typ.) Under voltage hysterisis

vs. Junction temperature (typ.)
15 1
12 0.8
Under voltage hysterisis : VH [ V ]
Under voltage : VUV [ V ]
9 0.6
6 0.4
3 0.2
0 0
0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140
Junction temperature ： Tj [ ℃ ] Junction temperature ： Tj [ ℃ ]
Alarm hold time vs. Power supply voltage (typ.) Over heating characteristics
TjOH,TjH vs. VCC (typ.)
10 200
TjOH
t ALM(TjOH)
8
150
Over heating protection : TjOH [℃]
Alarm hold time : tALM [ msec ]
OH hysterisis : TjH [℃]
100
t ALM(OC) 50
2
TjH
0 0
12 13 14 15 16 17 18 12 13 14 15 16 17 18
Power supply voltage ： VCC [ V ] Power supply voltage ： VCC [ V ]
4
Inverter
Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
Tj=25℃[Chip] (typ.) Tj=25℃[Terminal] (typ.)
60 60
VCC =15V VCC =15V
50 50
VCC =17V VCC =13V VCC =17V VCC =13V
40 40
Collector current : IC [ A ]
30 30
20 20
10 10
0 0
0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5
Collector-Emitter voltage ： VCE [ V ] Collector-Emitter voltage ： VCE [ V ]
60 60
VCC =15V VCC =15V
50 50
40 40
30 30
20 20
10 10
0 0
0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5
Forward current vs. Forward voltage Forward current vs. Forward voltage
[Chip] (typ.) [Terminal] (typ.)
60 60
50 50
Tj =25℃ Tj =125℃ Tj =25℃ Tj =125℃

40 40
Forward current : IF [ A ]
30 30
20 20
10 10
0 0
0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5
Forward voltage ： VF [ V ] Forward voltage ： VF [ V ]
5
Switching Loss vs. Collector Current (typ.) Switching Loss vs. Collector Current (typ.)
VDC=600V,VCC=15V,Tj=25℃ VDC=600V,VCC=15V,Tj=125℃
8 8
Eon
6 6
Switching loss ：Eon,Eoff,Err [mJ/cycle]
Switching loss ：Eon,Eoff,Err [mJ/cycle]

Eon
4 4
Eoff
Eoff
Eｒｒ
2 2
Eｒｒ
0 0
0 10 20 30 40 50 60 0 10 20 30 40 50 60
Collector current ： IC [ A ] Collector current ： IC [ A ]
Reversed biased safe operating area Transient thermal resistance (max.)

V CC=15V,T j≦125℃[Main Terminal] (min.)
150 10
Thermal resistance : Rth(j-c) [ ℃/W ]
100 1 FWD
IGBT
50 0.1
RBSOA
(Repetitive pulse)
0 0.01
0 300 600 900 1200 1500 0.001 0.01 0.1 1 10
Collector-Emitter voltage ： VCE [ V ] Pulse width ： PW [ sec ]
Power derating for IGBT (max.) Power derating for FWD (max.)
[per device] [per device]
300 300
Collector Power Dissipation : PC [ W ]
200 200
100 100
0 0
0 50 100 150 0 50 100 150
Case Temperature ： TC [ ℃ ] Case Temperature ： TC [ ℃ ]
6
Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
VDC=600V,VCC=15V,Tj=25℃ VDC=600V,VCC=15V,Tj=125℃
10000 10000
t on t on
t off t off
1000 1000
Switching time : ton,toff,tf [ nsec ]
Switching time : ton,toff,tf [ nsec ]

100 100
tf
tf
10 10
0 10 20 30 40 50 60 0 10 20 30 40 50 60
Collector current ： IC [ A ] Collector current ： IC [ A ]
Reverse recovery characteristics (typ.) Over current protection vs. Junction temperature (typ.)
trr,Irr vs. If VCC=15V
1000 150
t rr T j =125℃
120
t rr Tj =25℃
Over current protection level : IOC [ A ]
Reverse recovery time : trr [ nsec ]
Reverse recovery current :Irr [ A ]
100
90
Irr Tj =125℃
Irr Tj =25℃ 60
10
30
1 0
0 10 20 30 40 50 60 0 20 40 60 80 100 120 140
Forward current ： IF [ A ] Junction temperature ： Tj [ ℃ ]
7
Brake
30 30
25 25
VCC =15V VCC =15V
20 20
15 15
10 10
5 5
0 0
0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5
30 30
25 25
VCC =15V VCC =15V

20 20
15 15
10 10
5 5
0 0
0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5
Forward current vs. Forward voltage Forward current vs. Forward voltage
[Chip] (typ.) [Terminal] (typ.)
30 30
25 25
Tj =25℃ Tj=125℃ Tj =25℃ Tj =125℃

20 20
15 15
10 10
5 5
0 0
0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5
Forward voltage ： VF [ V ] Forward voltage ： VF [ V ]
8
Switching Loss vs. Collector Current (typ.) Reversed biased safe operating area
VDC=600V,VCC=15V V CC=15V,T j≦125℃[Main Terminal] (min.)
2 60
Tj =125℃ 50
1.5
Switching loss ：Eoff [mJ/cycle]
40
Tj =25℃
1 30
20
0.5
RBSOA
10 (Repetitive pulse)
0 0
0 5 10 15 20 25 30 0 300 600 900 1200 1500
Collector current ： IC [ A ] Collector-Emitter voltage ： VCE [ V ]
Power derating for IGBT (max.) Power derating for FWD (max.)
[per device] [per device]
200 200
100 100
0 0
0 50 100 150 0 50 100 150
Case Temperature ： TC [ ℃ ] Case Temperature ： TC [ ℃ ]
Transient thermal resistance (max.)
10
FWD
Thermal resistance : Rth(j-c) [ ℃/W ]
1 IGBT
0.1
0.01
0.001 0.01 0.1 1 10
Pulse width ： PW [ sec ]
9
Outline Drawings, mm
Weight: 290g(typ.)
10
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2014.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.
2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.
3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, flame retardant, and free of malfunction.
4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.
5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.
• Transportation equipment (mounted on cars and ships) • Trunk communications equipment
• Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
• Medical equipment
6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment
(without limitation).
• Space equipment • Aeronautic equipment • Nuclear control equipment
• Submarine repeater equipment
7.Copyright ©1996-2014 by Fuji Electric Co., Ltd. All rights reserved.

No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.
11
Technical Information IGBT Modules
Please refer to URLs below for futher information about products, application manuals and technical documents.
关于本规格书中没有记载的产品信息，应用手册，技术资料等，请参考以下链接。
本データシートに記載されていない製品情報 , アプリケーションマニュアル , 技術資料は以下の URL をご参照下さい。
FUJI ELECTRIC Power Semiconductor WEB site

日本 www.fujielectric.co.jp/products/semiconductor/
Global www.fujielectric.com/products/semiconductor/
中国 www.fujielectric.com.cn/products/semiconductor/
Europe www.fujielectric-europe.com/components/semiconductors/
North America www.americas.fujielectric.com/components/semiconductors/
Information
日本
1 半導体総合カタログ www.fujielectric.co.jp/products/semiconductor/catalog/
2 製品情報 www.fujielectric.co.jp/products/semiconductor/model/
3 アプリケーションマニュアル www.fujielectric.co.jp/products/semiconductor/model/igbt/application/
4 技術資料 www.fujielectric.co.jp/products/semiconductor/model/igbt/technical/
5 マウンティングインストラクション www.fujielectric.co.jp/products/semiconductor/model/igbt/mounting/
6 IGBT 損失シミュレーションソフト www.fujielectric.co.jp/products/semiconductor/model/igbt/simulation/
7 AT-NPC 3-Level 損失シュミレーションソフト www.fujielectric.co.jp/products/semiconductor/model/igbt/simulation_3level/
8 富士電機技報 www.fujielectric.co.jp/products/semiconductor/journal/
9 製品のお問い合わせ www.fujielectric.co.jp/products/semiconductor/contact/
10 改廃のお知らせ www.fujielectric.co.jp/products/semiconductor/discontinued/
Global
1 Semiconductors General Catalog www.fujielectric.com/products/semiconductor/catalog/
2 Product Information www.fujielectric.com/products/semiconductor/model/
3 Application Manuals www.fujielectric.com/products/semiconductor/model/igbt/application/
4 Technical Documents www.fujielectric.com/products/semiconductor/model/igbt/technical/
5 Mounting Instructions www.fujielectric.com/products/semiconductor/model/igbt/mounting/
6 IGBT Loss Simulation Software www.fujielectric.com/products/semiconductor/model/igbt/simulation/
7 AT-NPC 3-Level Loss Simulation Software www.fujielectric.com/products/semiconductor/model/igbt/simulation_3level/
8 Fuji Electric Journal www.fujielectric.com/products/semiconductor/journal/
9 Contact www.fujielectric.com/products/semiconductor/contact/
10 Revised and discontinued product information www.fujielectric.com/products/semiconductor/discontinued/
中国
1 半导体综合目录 www.fujielectric.com.cn/products/semiconductor/catalog/
2 产品信息 www.fujielectric.com.cn/products/semiconductor/model/
3 应用手册 www.fujielectric.com.cn/products/semiconductor/model/igbt/application/
4 技术资料 www.fujielectric.com.cn/products/semiconductor/model/igbt/technical/
5 安装说明书 www.fujielectric.com.cn/products/semiconductor/model/igbt/mounting/
6 IGBT 损耗模拟软件 www.fujielectric.com.cn/products/semiconductor/model/igbt/simulation/
7 AT-NPC 3-Level 损耗模拟软件 www.fujielectric.com.cn/products/semiconductor/model/igbt/simulation_3level/
8 富士电机技报 www.fujielectric.com.cn/products/semiconductor/journal/
9 产品咨询 www.fujielectric.com.cn/products/semiconductor/contact/
10 产品更改和停产信息 www.fujielectric.com.cn/products/semiconductor/discontinued/
2015-10

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7MBP35VDA120-50 IGBT Modules

IGBT MODULE (V series)

Maximum Ratings and Characteristics

Collector Current 1ms Icp - 70 A

Forward Current of Diode IF - 15 A

Electrical Characteristics (Tj =25ºC, VCC =15V unless otherwise specified)

Collector-Emitter saturation voltage VCE(sat) IC =35A

Thermal Characteristics (TC = 25ºC)

Noise Immunity (VDC =600V, VCC =15V)

Recommended Operating Conditions

Pre-drivers include following functions

Input signal threshold voltage :

Under voltage vs. Junction temperature (typ.) Under voltage hysterisis

OH hysterisis : TjH [℃]

VCC =15V VCC =15V

Tj =25℃ Tj =125℃ Tj =25℃ Tj =125℃

Switching loss ：Eon,Eoff,Err [mJ/cycle]

Reversed biased safe operating area Transient thermal resistance (max.)

Collector Power Dissipation : PC [ W ]

Switching time : ton,toff,tf [ nsec ]

VCC =17V VCC =13V VCC =17V VCC =13V

Tj =25℃ Tj=125℃ Tj =25℃ Tj =125℃

Collector Power Dissipation : PC [ W ]

Transient thermal resistance (max.)

7.Copyright ©1996-2014 by Fuji Electric Co., Ltd. All rights reserved.

FUJI ELECTRIC Power Semiconductor WEB site

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7.Copyright ©1996-2014 by Fuji Electric Co., Ltd. All rights reserved.