SOT23 NPN SILICON PLANAR

FMMT449 MEDIUM POWER TRANSISTOR FMMT449

ISSUE 3 - NOVEMBER 1995
FEATURES
TYPICAL CHARACTERISTICS
* Low equivalent on-resistance; RCE(sat) 250mΩ at 1A
E
tf,tr,td IB1=IB2=IC/10 C
0.8 ns
VCE=10V COMPLEMENTARY TYPE – FMMT549
PARTMARKING DETAIL – 449
150

0.6 IC/IB=10 tf
B
- (Volts)

Switching time
ts
100
ns

tr
0.4 800

td
600
ABSOLUTE MAXIMUM RATINGS.
50

0.2 PARAMETER SYMBOL VALUE UNIT

V

400
ts tf

tr

Collector-Base Voltage VCBO 50 V

200
ts

td
0 0
0 0.001 0.01 0.1 1 10 0.01 0.1 1
Collector-Emitter Voltage VCEO 30 V
IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage VEBO 5 V
Peak Pulse Current ICM 2 A
VCE(sat) v IC Switching Speeds
Continuous Collector Current IC 1 A
Base Current IB 200 mA
200 1.8 Power Dissipation at Tamb = 25°C Ptot 500 mW
1.6 Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
160 1.4
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
IC/IB=10

1.2
VCE=2V
- (Volts)

120
1.0 PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
0.8
Collector-Base V(BR)CBO 50 V IC=1mA, IE=0
h

80
0.6 Breakdown Voltage
40
0.4
Collector-Emitter V(BR)CEO 30 V IC=10mA, IB=0*
V

0.2
Breakdown Voltage
0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 Emitter-Base Breakdown V(BR)EBO 5 V IE=100µ A, IC=0
Voltage
IC - Collector Current (Amps) IC - Collector Current (Amps)
Collector Cut-Off ICBO 0.1 µA VCB=40V, IE=0
hFE v IC VBE(sat) v IC Current 10 µA VCB=40V, Tamb=100°C
Emitter Cut-Off Current IEBO 0.1 µA VEB=4V, IC=0
1.8
10 Collector-Emitter VCE(sat) 0.5 V IC=1A, IB=100mA*
Saturation Voltage 1.0 V IC=2A, IB=200mA*
1.6
I -Collector Current (A)

1.4 Base-Emitter VBE(sat) 1.25 V IC=1A, IB=100mA*

1
Saturation Voltage
- (Volts)

1.2 VCE=2V

1.0
DC
Base-Emitter Turn-On VBE(on) 1.0 V IC=1A, VCE=2V*
0.8
1s
100ms Voltage
0.1 10ms

0.6 100
1ms
µs Static Forward Current hFE 70 IC=50mA, VCE=2V*
Transfer Ratio 100 300 IC=500mA, VCE=2V*
V

0.4
C
0.2 0.01
80 IC=1A, VCE=2V*
0.1 1 10 100 40 IC=2A, VCE=2V*
0.001 0.01 0.1 1 10
Transition fT 150 MHz IC=50mA, VCE=10V
IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) Frequency f=100mHz
Output Capacitance Cobo 15 pF VCB=10V, f=1MHz
VBE(on) v IC Safe Operating Area
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 107 3 - 106
 SOT23 NPN SILICON PLANAR
FMMT449 MEDIUM POWER TRANSISTOR FMMT449
ISSUE 3 - NOVEMBER 1995
FEATURES
TYPICAL CHARACTERISTICS
* Low equivalent on-resistance; RCE(sat) 250mΩ at 1A
E
tf,tr,td IB1=IB2=IC/10 C
0.8 ns
VCE=10V COMPLEMENTARY TYPE – FMMT549
PARTMARKING DETAIL – 449
150

0.6 IC/IB=10 tf
B
- (Volts)

Switching time
ts
100
ns

tr
0.4 800

td
600
ABSOLUTE MAXIMUM RATINGS.
50

0.2 PARAMETER SYMBOL VALUE UNIT

V

400
ts tf

tr

Collector-Base Voltage VCBO 50 V

200
ts

td
0 0
0 0.001 0.01 0.1 1 10 0.01 0.1 1
Collector-Emitter Voltage VCEO 30 V
IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage VEBO 5 V
Peak Pulse Current ICM 2 A
VCE(sat) v IC Switching Speeds
Continuous Collector Current IC 1 A
Base Current IB 200 mA
200 1.8 Power Dissipation at Tamb = 25°C Ptot 500 mW
1.6 Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
160 1.4
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
IC/IB=10

1.2
VCE=2V
- (Volts)

120
1.0 PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
0.8
Collector-Base V(BR)CBO 50 V IC=1mA, IE=0
h

80
0.6 Breakdown Voltage
40
0.4
Collector-Emitter V(BR)CEO 30 V IC=10mA, IB=0*
V

0.2
Breakdown Voltage
0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 Emitter-Base Breakdown V(BR)EBO 5 V IE=100µ A, IC=0
Voltage
IC - Collector Current (Amps) IC - Collector Current (Amps)
Collector Cut-Off ICBO 0.1 µA VCB=40V, IE=0
hFE v IC VBE(sat) v IC Current 10 µA VCB=40V, Tamb=100°C
Emitter Cut-Off Current IEBO 0.1 µA VEB=4V, IC=0
1.8
10 Collector-Emitter VCE(sat) 0.5 V IC=1A, IB=100mA*
Saturation Voltage 1.0 V IC=2A, IB=200mA*
1.6
I -Collector Current (A)

1.4 Base-Emitter VBE(sat) 1.25 V IC=1A, IB=100mA*

1
Saturation Voltage
- (Volts)

1.2 VCE=2V

1.0
DC
Base-Emitter Turn-On VBE(on) 1.0 V IC=1A, VCE=2V*
0.8
1s
100ms Voltage
0.1 10ms

0.6 100
1ms
µs Static Forward Current hFE 70 IC=50mA, VCE=2V*
Transfer Ratio 100 300 IC=500mA, VCE=2V*
V

0.4
C
0.2 0.01
80 IC=1A, VCE=2V*
0.1 1 10 100 40 IC=2A, VCE=2V*
0.001 0.01 0.1 1 10
Transition fT 150 MHz IC=50mA, VCE=10V
IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) Frequency f=100mHz
Output Capacitance Cobo 15 pF VCB=10V, f=1MHz
VBE(on) v IC Safe Operating Area
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 107 3 - 106