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Five-Level Transformerless Inverter For Single-Phase Solar Photovoltaic Applications
Five-Level Transformerless Inverter For Single-Phase Solar Photovoltaic Applications
Five-Level Transformerless Inverter For Single-Phase Solar Photovoltaic Applications
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3412 IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, VOL. 8, NO. 4, DECEMBER 2020
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GRIGOLETTO: FIVE-LEVEL TRANSFORMERLESS INVERTER FOR SINGLE-PHASE SOLAR PV APPLICATIONS 3413
Fig. 4. Switching states, output voltage, and currents of the proposed inverter. (a) v4 ; v o = v dc . (b) v3A ; v o = v dc /2. (c) v3B ; v o = v dc /2. (d) v0A ; v o = 0.
(e) v0B ; v o = 0. (f) v2A ; v o = −v dc /2. (g) v2B ; v o = −v dc /2. (h) v1 ; v o = −v dc .
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3414 IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, VOL. 8, NO. 4, DECEMBER 2020
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GRIGOLETTO: FIVE-LEVEL TRANSFORMERLESS INVERTER FOR SINGLE-PHASE SOLAR PV APPLICATIONS 3415
TABLE III
D EFINITION OF D UTY C YCLES dS1 , dS2 , AND dS5
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3416 IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, VOL. 8, NO. 4, DECEMBER 2020
III. S EMICONDUCTOR L OSSES The instant t1 corresponds to the transition between the regions
R3 and R4 , as illustrated in Fig. 8. Therefore, this transition
This section gives a description of conduction and switching occurs when the instantaneous value of d(t) is 0.5, so it can
losses in the semiconductors. For the conduction loss analysis, be written
the ripple current is disregarded. Furthermore, for bipolar
Dm sin (ωt1 ) = 0.5 ⇒ t1 = sin−1 (0.5/Dm )/ω. (15)
devices such as insulated gate bipolar transistor and diode,
the conduction voltage drop Von is not significantly affected Due to the quarter-wave symmetry, the instants t3 and t4 can
by the conduction current and, therefore, can be considered be derived as
constant [36]. Moreover, the charging process of C2 results
in extra semiconductor losses, which will be addressed in this t3 = T /2 + t1
section. t4 = T − t1 . (16)
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GRIGOLETTO: FIVE-LEVEL TRANSFORMERLESS INVERTER FOR SINGLE-PHASE SOLAR PV APPLICATIONS 3417
By substituting (16) in (14) results Furthermore, let us assume the region R1 as the interval of
significant discharge of the capacitor C2 . Therefore, according
T −t1 T
2 +t1
Q ext = Im | sin(ωt)|dt + 4Dm | sin2 (ωt)|dt . to Fig. 8, the voltage across C2 at the beginning of the
T
2 +t1 T
2 region R1 is v C2(t 3) and at the end of region R1 is v C2(t 4).
(17) In this way, it can be written
t4
By solving (17) and substituting it in (13), Pext is derived 1
i C2 (t) = v C2(t 3) − v C2(t 4) ≈ 2v C2 . (26)
and can be expressed as C 2 t3
Im Von For the region R1 , i C2 = i o so by substituting (25) in (26) and
Pext =K1 (18)
π solving the integral, the capacitance C2 is
where K 1 for 0.5 < Dm <= 1 is Po T 1
C2 = 4− . (27)
−1 0.5 3 1 2πv dc v C2 Dm Dm2
K 1 = Dm sin + 4− 2 (19)
Dm 4 Dm It can be noted that the capacitance C2 is directly proportional
and K 1 for Dm < 0.5 is to the output power, fundamental period, and modulation
index, and inversely proportional to the voltage ripple. On the
0.5
K 1 = Dm sin−1 . (20) other hand, a small value of C1 is required since its charge
Dm can be kept constant over a sampling period Ts in steady-state
The total conduction losses of the switch s1 including Pext is operation.
Im Von
Pon_s1t = (1 + K 1 ) . (21) B. Voltage and Current Stress on Semiconductors
π
This section will give the guidelines to define the voltage
It is important to point out that (18) represents the additional
and current stress on the semiconductors. The switches s1 ,
losses for the switches s1 and s2 while the conduction losses
s2 , s3 , and s4 form a flying capacitor cell and the maxi-
of the diode D1 can be written as
mum voltage on each semiconductor is v C1 or (v Cin − v C1 )
Im VF according to the switching states shown in Fig. 4. Therefore,
Pext,d = K1 (22)
π the maximum voltage on each of them is v dc /2. On the other
where VF is the forward voltage of the diode. Finally, the total hand, the switches s5 and s6 form a HB cell and they can
conduction semiconductor losses of the proposed inverter can be submitted to v C2 . Thus, the maximum voltage on the
be expressed as semiconductors s5 and s6 is v dc . Finally, by analyzing Fig. 4,
it can be noted that the diode D1 is reversed biased by v C2 in
2Im Von VF
Pon_t = 3+ + 1 K1 . (23) the states v0B and v1 , therefore, its maximum blocking voltage
π 2Von
is v dc . Thus, (28) and (30) summarize the voltage stress on
B. Switching Losses the semiconductor devices
v dc
The switches s1 . . . s4 and the diode D1 operate at carrier v s1,max = v s2,max = v s3,max = v s4,max = (28)
2
frequency while s5 and s6 operate at fundamental frequency. v s5,max = v s6,max = v D1,max = v dc . (29)
Thus, the switching loss is giving by
Common ground inverters which employ switched capac-
Psw = ∝ f sw Vsw(E ON + E OFF ) itors present additional current stress on the semiconductors
during the charge of the capacitor. In order to charge the
PD = ∝ f sw Vsw E rec (24)
capacitor C2 , the semiconductors are s1 , s2 , and D1 conduct
where f sw = fs for s1 . . . s4 and D1 , while f sw = f1 for s5 the additional current i ch , as shown in Fig. 4(a) and (d). The
and s6 . Vsw is the voltage across the semiconductors, E rec is maximum value of the current depends on the capacitance
the recovery energy of the diode, E ON and E OFF are the energy and resistance of the path. Note in Fig. 8 that i s1 presents
loss during ON and OFF transitions, respectively. the maximum value at start of the region R2 at t4 when the
switching state v0A is applied. Therefore, at t4 , from the path
IV. D ESIGN G UIDELINES of devices shown in Fig. 4(d) it can be written
A. Dimensioning of the Capacitor C2 −v Cin (t4) + i ch,max R + v C2 (t4) = 0 (30)
The operation of the proposed inverter depends on the
where
design of the capacitor C2 . In its turn, the capacitor C2
provides output energy during the region R1 resulting in R = Ron,s1 + Ron,s2 + Ron,D1 + ESR (31)
voltage oscillation at fundamental frequency, as seen in Fig. 8.
and ESR is the equivalent series resistance of capacitors Cin
Considering a unit PF operation, the output current i o can
and C2 . It is reasonable to assume that v Cin (t4 ) − v C2 (t4 ) ≈
be written as function of dc-bus voltage and the output power
2v C2 . Therefore, the maximum current can be defined as
Po as
2Po Po T 1
i o (t) = sin(ωt). (25) i ch,max ≈ 4− . (32)
v dc Dm πC2 v dc Dm R Dm2
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3418 IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, VOL. 8, NO. 4, DECEMBER 2020
TABLE IV
C OMPARISON OF D IFFERENT T OPOLOGIES
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GRIGOLETTO: FIVE-LEVEL TRANSFORMERLESS INVERTER FOR SINGLE-PHASE SOLAR PV APPLICATIONS 3419
TABLE V
P ROTOTYPE PARAMETERS
Fig. 14. Simulation results for grid-connected inverter operating with unity,
leading, and lagging PF.
A grid-connected PV inverter has to process both active a PV string with the following characteristics: open voltage
power and reactive power as required by some standards of 420 V, short current of 5 A, rate of maximum power
and grid codes. For example, according to EN 50 438, of 1.2 kW with solar irradiance equals 1000 W/m2 .
a microinverter shall operate with PF between 0.95 lead and Fig. 14 shows the results from the grid-connected inverter,
0.95 lag [41]. where a reference current with amplitude of 8 A was defined
In order to connect an inverter to the grid, it is necessary for the operation with unity PF (0–34 ms), 0.55 leading PF
a current controller. Generally, current controllers employ (34–68 ms), and 0.55 lagging PF (68–102 ms). This result
proportional-resonant action in stationary frames or PI action demonstrates the leading and lagging inverter operation as
in synchronous frames. Here, a simplified current control well as the good dynamic performance during the transition
scheme was adopted to the inverter grid connection [42]. The between the power operation modes.
controller is performed in synchronous frames and it demands In order to show the inverter operation with unity PF by
a phase lock loop as shown in Fig. 13. means the experimental setup, the output of the inverter was
The active and reactive power grid capacity was verified connected to a resistive load (R = 35 ). Fig. 15 shows the
by simulations results. For this purpose, it was employed output current, the output voltage in phase as expected.
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3420 IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, VOL. 8, NO. 4, DECEMBER 2020
Fig. 16. Experimental results for lagging PF operation: output current Fig. 18. Transient in modulation index from 0.4 to 0.9 showing the output
io (10 A/div), PWM output voltage v o (200 V/div), capacitor voltage v C2 current io (5 A/div), PWM output voltage v o (200 V/div), capacitor voltage
v Cin (500 V/div), v C1 (100 V/div), and time scale (10 ms/div).
(200 V/div), and time scale (5 ms/div).
Fig. 19. Main waveforms during a transient in the capacitor voltage: output
Fig. 17. Voltage across the switches and the diode: v s1 (200 V/div), v s5 current io (5 A/div), PWM output voltage v o (200 V/div), capacitor voltage
(500 V/div), v D1 (200 V/div), PWM output voltage v o (500 V/div), and time v C2 (500 V/div), v C1 (100 V/div), and time scale (50 ms/div).
scale (2 ms/div).
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GRIGOLETTO: FIVE-LEVEL TRANSFORMERLESS INVERTER FOR SINGLE-PHASE SOLAR PV APPLICATIONS 3421
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3422 IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, VOL. 8, NO. 4, DECEMBER 2020
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[35] J. C. Giacomini, L. Michels, H. Pinheiro, and C. Rech, “Active damping Felipe Bovolini Grigoletto (S’13–M’14) was born
scheme for leakage current reduction in transformerless three-phase grid- in Restinga Sêca, Brazil, in 1985. He received
connected PV inverters,” IEEE Trans. Power Electron., vol. 33, no. 5, the B.Sc., M.Sc., and D.Sc. degrees in electrical
pp. 3988–3999, May 2018. engineering from the Federal University of Santa
[36] Y. Gu, W. Li, Y. Zhao, B. Yang, C. Li, and X. He, “Transformerless Maria, Santa Maria, Brazil, in 2007, 2009, and 2013,
inverter with virtual DC bus concept for cost-effective grid-connected respectively.
PV power systems,” IEEE Trans. Power Electron., vol. 28, no. 2, He is currently a Professor with the Federal
pp. 793–805, Feb. 2013. University of Pampa, Alegrete, Brazil. His current
[37] J.-F. Ardashir, M. Sabahi, S. H. Hosseini, F. Blaabjerg, E. Babaei, and research interests include renewable energy conver-
G. B. Gharehpetian, “A single-phase transformerless inverter with charge sion systems, grid-connected converters, and modu-
pump circuit concept for grid-tied PV applications,” IEEE Trans. Ind. lation strategies for multilevel converters.
Electron., vol. 64, no. 7, pp. 5403–5415, Jun. 2017. Dr. Grigoletto is a member of the IEEE Industrial Electronics Society.
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