Current electricity

ItDt
F
·
= F = unit : Ampere
,

Conductors are materials which have

free electrons
·

* OUM' Law
V= RI

R(z) ,

R =

P
·
= current
density J [Am

·
E = JP
J= -
E

= Conductivity
- =

* Drift
Velocity
e ee
t

s
t
2
e e
t

I Imagine a
Present
conductor will free electron
inside and is subjected to
Pash ofe
electric field I then the electrom
move to wards the 1+ ) where there

are collision between them .

 drift velocity is
nothing but the speed at which the
·

electrons move toward it

-ZE
vd =
.
T

T = relaxation time
= At between two collisions

I=
&A T
. . n .

Mea
=
-

I= neAvd

mobility
=
=
=
* limitations of ohm" law

·
The relation between and I depend on the sign of v if the direction
of V is reversed
keeping magnitude same but I does not
change its

direction.

·
There is more than one values of for one current
.
 *
Resistivity of various materials

while insulators have

Metall have low
resistivity high resistivity

* Temperature
dependency on
resistivity.

Ri = Ro [1 + G(T To)] -

↓ ↳ Resistance room temp

at room temp
resistance at
tempT

Pol x(T To)]

·

P+ = + -

I
.4 -
0

of cocon
M

Poc
O ico iso or soo
Temp(k) > -
Temp(k) > -

i
for copper lii)
for nichrome

↑i is for semiconductor e

P = = Wine E
* Cells ,
EMF, Internal resistance

Cell = Provides electrical all circuit elements

energy
to
, They do
·

Produce Potential difference

forces the
not maintains a which
charge ,

charges to move in the circuit

.

·
EMF : Electro motive
force
(E) = Potential
difference between two electrode in a cell
When no current flows = E = V
+
-
C-V-) = V
+
+ V-

I I

< <

<
e Le
anode -
- +
> cathode
-

-
+
t
> cell
-

e
-

L I
=+
-

-electrolyte
>-

conducting sol

electrodes

the Path
Internal resistance : The obstruction
offered to
of current

due to the material

of electrolyte of the cell

(v)

Terminal Potential difference between

Voltage terminals after
:
·

current
flowing through them
 -

E-Ir-> when
discharging
Or

Eeg
=
I >
-
I=
-

Rex + + Veg

* Factors at which Internal resistance depends

(i) Area
of electrode (AY-L)
ii) distance between electrodes (diri)
(iii) concentration of electrolyte (civi (
(iv) Temperature (TTrh)

Note : internal resistance do not

follow ohms law]

* Combination cells
of

(i) Series :

:
U ,

A B

~
Ez
3
E,
Eeg = +

Positive
reg 4,
>
= + Va

r. Va
- terminal
r3 to Positive
terminal
El E2 Ez

Eeq
v3] -
= E, + E2 -

Es
n
reg : +
2 +

n cells
of emF'E' in Series with internal resistance i
A
·

no
 > Similar
-

Er v. Polarity
ciis Parallel :

Es
Vo

=
dea

different Polarity

& Es
ve

Eeg :

If n cells with emp's are kept in Parallel their eq resistance

will be
If
:

Ea
=E
rea =

In
*
>
-
o
-

reg - Pr
*
Kirchhoff" rule > Junction rule

loo Prule

(i) Junction rule = the Sum Of current entering the Junction is equal
to the sum
of current leaving the Junction .

eq :

F
#=
1 =
IOA
5 A SA
> < w

entering
Junction
W
I + 5+ 5 = 0
leaving
5+ 5-10 = 0 Junction

(current
we take I
flowing) as it if the
flow of current is opposite

direction we are calculating

SA
eg :
7 <
5A
M
IOA = 10A-5A-SA =
0

opposite

direction

dis IOP vale = The

algebric sum
of change in Potential around a

closed loop is o

DV Potential +V
0
gain
= =

·
Potential drop = -
 -
B
eg
:

in Applied Law

32 LOOP De BAD

DVD =
Vp -V p = 0

3r

Ftee
e

= 62 .

br = 6
-
3- 3

6 -
6 = 0
=

< .
D in

note :

-
+
DV = ( E

>
Path
+ -

DV = + E
<
Path
I
AV =
+ I R
>
Riz
<
Path
F
DV = IR
>
-

Ri
>

Lower Potential
↳
Potential
higher
Potential
=
gain in
= + DV
* Wheatstone
Bridge =

Ri R2

A C 7I I E B
↳ & Rs -
, ⑳
·
I
-
-I2
1
I2

R *
Ru

- F . . . . . .

&
R3
the
When = then current
flowing through Be e

R2
line Af will be
O

Pity