AP2301GN-HF

Halogen-Free Product
Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Simple Drive Requirement BVDSS -20V

▼ Small Package Outline D RDS(ON) 130mΩ
▼ Surface Mount Device ID - 2.6A
▼ RoHS Compliant
S
SOT-23 G
Description D
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness. G
S
The SOT-23 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage - 20 V
VGS Gate-Source Voltage +12 V
3
ID@TA=25℃ Continuous Drain Current -2.6 A
3
ID@TA=70℃ Continuous Drain Current -2.1 A
1
IDM Pulsed Drain Current -10 A
PD@TA=25℃ Total Power Dissipation 1.38 W
Linear Derating Factor 0.01 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 90 ℃/W

Data and specifications subject to change without notice 1

200902046
AP2301GN-HF

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=-5V, ID=-2.8A - - 130 mΩ
VGS=-2.8V, ID=-2.0A - - 190 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 - -1.25 V
gfs Forward Transconductance VDS=-5V, ID=-2A - 4 - S
IDSS Drain-Source Leakage Current VDS=-20V, VGS=0V - - -1 uA
o
Drain-Source Leakage Current (Tj=70 C) VDS=-16V, VGS=0V - - -10 uA
IGSS Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA
2
Qg Total Gate Charge ID=-2A - 5 9 nC
Qgs Gate-Source Charge VDS=-16V - 1 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 2 - nC
2
td(on) Turn-on Delay Time VDS=-10V - 6 - ns
tr Rise Time ID=-1A - 17 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 16 - ns
tf Fall Time RD=10Ω - 5 - ns
Ciss Input Capacitance VGS=0V - 270 - pF
Coss Output Capacitance VDS=-20V - 70 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 55 - pF
Rg Gate Resistance f=1.0MHz - 10 15 Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=-1.2V - - -1 A
1
ISM Pulsed Source Current ( Body Diode ) - - -10 A
2
VSD Forward On Voltage Tj=25℃, IS=-1.6A, VGS=0V - - -1.2 V

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP2301GN-HF

10 10

T A =25 C o V GS = -5V T A =150 o C V GS = -5V

V GS = -4V V GS = -4V
8 8
-ID , Drain Current (A)

-ID , Drain Current (A)

V GS = -3V
V GS = -3V
6 6

4 4

V GS = -2V
2 V GS = -2V 2

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6

-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

240 1.8

I D = -2.8A
I D = -2A
1.6 V GS = -5V
T A =25 ℃
200
Normalized RDS(ON)

1.4
RDS(ON) (Ω )

160 1.2

120

0.8

80 0.6
0 2 4 6 8 10 -50 0 50 100 150

-V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

10 1.5
Normalized -VGS(th) (V)

1.0
-IS(A)

T j =150 o C T j =25 o C
1

0.5

0 0.0
0.1 0.3 0.5 0.7 0.9 1.1 1.3 -50 0 50 100 150

-V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP2301GN-HF
f=1.0MHz
5 1000
-VGS , Gate to Source Voltage (V)

I D = -2A C iss
V DS = -16V
3

C (pF)
100

C oss
2
C rss

0 10
0 1 2 3 4 5 6 1 5 9 13 17 21 25

Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty factor=0.5
Normalized Thermal Response (Rthja)

0.2
10

0.1
0.1

0.05
-ID (A)

1ms PDM
1
t
10ms 0.01
T
0.01
Single Pulse
Duty factor = t/T
100ms Peak Tj = PDM x Rthja + T a
0.1 Rthja = 270℃/W

T A =25 °C
1s
Single Pulse
DC
0.01 0.001
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

-V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
-4.5V
QGS QGD

10%
VGS
Charge Q
td(on) tr td(off) tf

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform