Electric Drives

MEU 07677
 Content

➢ Features of power semiconductor devices

i. Theory of semiconductor devices.
ii. Classification of power semiconductor switches
iii. Thermal protection of power switching devices
1.0 Theory of semiconductor devices

The theory of semiconductor devices forms the foundation of modern electronics,

encompassing the study of electronic components made from semiconductor
materials, such as silicon and germanium. These devices are essential building
blocks in various electronic circuits and systems, ranging from simple diodes and
transistors to complex integrated circuits. Semiconductor devices are electronic
components that utilize the properties of semiconducting materials, such as
silicon or germanium, to control the movement of electrical current. The theory
of semiconductor devices is based on the behavior of charge carriers (electrons
and holes) within these materials and the manipulation of their movement to
achieve specific electronic functions.
 1.0 Theory of semiconductor devices

➢key concepts related to the theory of semiconductor devices:

➢Atomic Structure: Semiconductors are crystalline materials composed of atoms arranged in a regular lattice
structure. Each atom has a nucleus surrounded by electrons in energy levels or bands. The valence band
contains the outermost electrons involved in bonding, while the conduction band is the energy level above the
valence band that allows electrons to move freely.
➢Doping: Doping is the intentional introduction of impurity atoms into a semiconductor material to alter its
electrical properties. Two common types of doping are:
➢N-Type Doping: N-type doping involves adding impurity atoms, such as phosphorus or arsenic, with extra valence electrons
compared to the host semiconductor material. These impurities donate electrons, resulting in an excess of negatively charged
carriers (electrons) in the material.
➢P-Type Doping: P-type doping involves adding impurity atoms, such as boron or gallium, with fewer valence electrons
compared to the host semiconductor material. These impurities create "holes" or vacant positions in the valence band, resulting in
an excess of positively charged carriers (holes) in the material.
1.0 Theory of semiconductor devices
 1.0 Theory of semiconductor devices

Diodes:
A diode is a two-terminal semiconductor device that allows current to flow in only one
direction. It consists of a p-n junction formed by combining p-type and n-type
semiconductors.
When a forward voltage is applied across the diode, it conducts current. In reverse bias,
the diode blocks current flow.
1.0 Generation electric energy
 1.0 Theory of semiconductor devices

Transistors:
Bipolar Junction Transistor (BJT): It is a three-layer device with two pn-
junctions. The common types are NPN and PNP.
Field-Effect Transistor (FET): It relies on the modulation of current by an
electric field. The two common types are the Junction Field-Effect Transistor
(JFET) and the Metal-Oxide-Semiconductor Field-Effect Transistor
(MOSFET).
1.0 Theory of semiconductor devices
 1.0 Theory of semiconductor devices

Integrated Circuits (ICs):

ICs are miniaturized electronic circuits consisting of interconnected semiconductor devices

and passive components on a single chip.
Monolithic Integrated Circuits: All components are fabricated on a single substrate using
techniques like photolithography.
Hybrid Integrated Circuits: Combines individual devices mounted on a substrate and
interconnected using thin films or wires.
1.0 Theory of semiconductor devices
1.0 Theory of semiconductor devices

Optoelectronic Devices:
Light-Emitting Diodes (LEDs): They emit light when forward-biased, converting
electrical energy into light energy.
Photodiodes: These semiconductor devices generate a current when exposed to
light, enabling light detection.
Photovoltaic Cells (Solar Cells): They convert light energy into electrical energy
through the photovoltaic effect.
 1.0 Theory of semiconductor devices

Semiconductor Memories:
Random-Access Memory (RAM): It is a volatile memory that stores data temporarily.
Common types include Static RAM (SRAM) and Dynamic RAM (DRAM).
Read-Only Memory (ROM): A non-volatile memory that stores data permanently.
Flash Memory: It is a type of non-volatile memory commonly used in portable devices
and solid-state drives (SSDs).
 2.0 Classification of power semiconductor switches

Power semiconductor switches are electronic devices used to control and switch high-power
electrical circuits. They are classified based on their switching characteristics, structure, and
operating principles.
➢Here are some common classifications of power semiconductor switches:
Bipolar Junction Transistor (BJT):
➢BJT switches are three-terminal devices that use both majority and minority carriers for operation.
➢They exhibit high current and power-handling capabilities but have slower switching speeds
compared to other switches.
➢Common types include NPN and PNP transistors.
 2.0 Classification of power semiconductor switches

➢Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET):

MOSFET switches are three-terminal devices that use an electric field to control the conductivity of a channel.
They offer fast switching speeds, low on-state resistance, and high efficiency.
Common types include Enhancement-Mode MOSFETs (normally-off) and Depletion-Mode MOSFETs
(normally-on).
➢Insulated Gate Bipolar Transistor (IGBT):
➢IGBT switches combine the high input impedance of MOSFETs with the low on-state voltage drop of bipolar
transistors.
➢They offer high voltage and current ratings, along with fast switching speeds.
➢IGBTs are commonly used in applications such as motor drives and power converters.
 2.0 Classification of power semiconductor switches

➢Thyristor Family:
➢Thyristors are four-layer semiconductor devices that have a latching behavior and require a trigger to turn
on.
➢Silicon-Controlled Rectifier (SCR), also known as Thyristor, is a widely used thyristor.
➢Other members of the thyristor family include Gate Turn-Off Thyristor (GTO), Triac, and Diac.

➢Gate Turn-Off Thyristor (GTO):

➢GTO is a special type of thyristor that can be turned off by applying a negative gate current.
➢It offers the advantages of thyristors (high voltage and current ratings) along with controllable turn-off
capability.
2.0 Classification of power semiconductor switches

➢GaN (Gallium Nitride) and SiC (Silicon Carbide) Devices: GaN and SiC are wide-bandgap
semiconductor materials that offer superior electrical properties compared to silicon. Power
switches based on GaN and SiC technology offer higher efficiency, faster switching speeds, and
higher temperature operation, making them ideal for high-frequency and high-power applications
such as power supplies, electric vehicles, and renewable energy systems.

➢Voltage Regulators: Voltage regulators are semiconductor devices used to regulate the output
voltage of a power supply or circuit. They come in various forms, including linear regulators,
switching regulators (such as buck, boost, and buck-boost converters), and voltage references.
 3.0 Thermal protection of power switching devices

➢Thermal protection is crucial for power switching devices to ensure their safe and reliable operation.
Excessive heat can damage the devices, degrade their performance, and lead to failures.
➢Heat Sinks: Heat sinks are passive cooling devices attached to power switching devices to dissipate
excess heat. They provide a larger surface area for heat transfer and often incorporate fins or other
structures to enhance cooling. Heat sinks are typically made of materials with high thermal
conductivity, such as aluminum or copper.
➢Temperature Sensors: Temperature sensors, such as thermistors or thermal diodes, are used to
monitor the temperature of power switching devices. They provide feedback to the control circuitry,
which can take appropriate actions based on the measured temperature. For example, if the
temperature exceeds a certain threshold, the system may reduce the operating current or trigger an
alarm.
HeatSinks
Temperature Sensors
 3.0 Thermal protection of power switching devices

➢Thermal Protection Circuitry: Power switching devices may incorporate built-in

thermal protection circuitry to safeguard against overheating. These circuits can include
temperature sensing elements, current sensing elements, and control logic. The
protection circuitry can activate various protective measures, such as reducing the
switching frequency, limiting the current, or shutting down the device completely if the
temperature exceeds a critical level.
➢Overtemperature Shutdown: Power switching devices may have a built-in
overtemperature shutdown feature. When the temperature rises above a specified limit,
the device automatically shuts down to prevent further temperature increase and
potential damage. This feature provides an additional layer of protection and is
commonly used in critical applications.
3.0 Thermal protection of power switching devices

➢Thermal Modeling and Simulation: Thermal modeling and simulation techniques are employed
during the design phase to analyze and predict the thermal behavior of power switching devices. By
considering factors such as device characteristics, operating conditions, and cooling mechanisms,
engineers can optimize the device's thermal management and ensure that it operates within safe
temperature limits.

➢Current Limiting: Excessive current flow through power switching devices can generate
excessive heat. Current-limiting measures, such as fuses, circuit breakers, or current-sensing
feedback loops, can be implemented to prevent excessive heating due to overcurrent conditions.
These measures help protect the devices from thermal stress caused by high current levels.