Electric Drives

MEU 07677
 Electric Drives

Electric drives are systems that convert electrical energy into

mechanical energy to control the motion or operation of various types
of machinery or equipment. They play a crucial role in a wide range
of applications, including industrial machinery, transportation
systems, robotics, renewable energy systems, and more. Electric
drives provide efficient, controllable, and flexible means of powering
and controlling mechanical systems
Basic components of an electric drive system typically
include
➢Power Supply: The power supply provides the electrical energy required for the drive system. It may
be connected to an electrical grid, a battery system, or a renewable energy source such as solar panels
or wind turbines.

➢Electric Motor: The electric motor is the primary actuator in the drive system that converts electrical
energy into mechanical energy. Various types of electric motors are used in different applications,
including induction motors, synchronous motors, permanent magnet motors, and DC motors. The
motor selection depends on factors such as power requirements, speed control, efficiency, and torque
characteristics.

➢Motor Controller: The motor controller is responsible for controlling the operation of the electric
motor. It regulates variables such as motor speed, torque, and direction of rotation. The controller may
include power electronics components such as inverters, converters, and amplifiers to modulate the
electrical signals supplied to the motor.
 Basic components of an electric drive system typically
include
➢Sensors: Sensors are used to measure and provide feedback on various
parameters related to the drive system, such as motor speed, position,
temperature, and current. This feedback information is used by the motor
controller to adjust and optimize the motor operation.
➢Control System: The control system comprises algorithms and software that
govern the operation of the motor controller. It receives input signals from the
sensors and generates appropriate control signals to maintain desired motor
performance and respond to external commands or system requirements.
 Applications of Electric drives
➢Industrial Machinery: Electric drives are extensively used in industrial machinery such as conveyors, pumps,
compressors, fans, mixers, CNC machines, printing machines, and packaging equipment. They provide precise
control over speed and torque, allowing for efficient and flexible operation of these machines.
➢Electric Vehicles: Electric drives are a fundamental component of electric vehicles (EVs), including electric
cars, buses, and bikes. They power the wheels, providing the necessary torque and controlling the vehicle's speed
and acceleration. Electric drives in EVs contribute to reduced emissions, improved energy efficiency, and quieter
operation compared to internal combustion engine vehicles.
➢Robotics: Electric drives play a crucial role in robotic systems, enabling precise and coordinated movements.
They are used in robotic arms, grippers, linear actuators, and other motion control mechanisms, allowing robots to
perform tasks with accuracy, repeatability, and versatility.
➢HVAC Systems: Heating, ventilation, and air conditioning (HVAC) systems utilize electric drives in fans,
pumps, and compressors for efficient temperature and humidity control in residential, commercial, and industrial
buildings.
 Contents

➢Construction and operation of power electric drives

i. Describe construction of power semiconductor devices (diode,

thyristor or silicon-controlled rectifier (SCR), triac, gate turn-off
thyristor (GTO), bipolar junction transistor (BJT or BPT), power
MOSFET, static induction transistor (SIT), insulated gate bipolar
transistor (IGBT), MOS-controlled thyristor (MCT), integrated
gate-commutated thyristor (IGCT).
ii. Operating principle of power semiconductor devices.
 Contents

iii. Applications of power semiconductor devices.

iv. Drivers for semiconductor power devices (switches).
 Diode

A diode is the simplest power semiconductor device, consisting

of a P-N junction. It is typically formed by doping one region
of a semiconductor material (e.g., silicon) with a P-type
impurity and the other region with an N-type impurity. This
construction creates a unidirectional flow of current, allowing
it to conduct in one direction (forward bias) and block in the
opposite direction (reverse bias).
 Thyristor or Silicon-Controlled Rectifier
(SCR)

A thyristor or SCR is a four-layer semiconductor device with three P-N junctions. It

consists of a P-N-P-N structure, where the middle P-layer is the control terminal (gate).
The device can be turned on by applying a positive voltage to the gate terminal, allowing
current to flow through it. Once triggered, it remains conducting until the current drops
below a certain threshold.
➢ Holding current refers to the minimum anode current required to maintain the
thyristor in the conducting state after it has been triggered into conduction.
➢Latching current refers to the minimum current required to keep a thyristor (such as an
SCR or silicon-controlled rectifier) in the ON state after it has been triggered into
conduction.
 Triac

A triac is a bidirectional semiconductor device that can conduct current in both

directions. It consists of two thyristors connected in parallel, but in opposite
directions. This construction allows the triac to control AC power by
conducting in both the positive and negative half-cycles.
 Gate Turn-Off Thyristor (GTO)
A GTO is a high-power thyristor with an additional gate terminal that allows it
to be turned off by applying a negative voltage to the gate. It has a similar
structure to a thyristor but includes an N-type region near the cathode, which
enables the device to be turned off quickly by reversing the anode-cathode
voltage.
 Bipolar Junction Transistor (BJT or BPT)
A BJT is a three-layer semiconductor device with two P-N junctions. It consists
of a thin middle layer (base) sandwiched between two heavily doped layers
(emitter and collector). By applying a small current to the base-emitter junction,
a larger current can flow between the collector and emitter terminals. BJTs are
used for amplification and switching applications.
 Power MOSFET
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a
voltage-controlled device. It consists of a P-N junction with a metal gate
separated from the channel by an insulating layer (usually silicon dioxide). By
applying a voltage to the gate, an electric field is created, controlling the
conductivity of the channel between the drain and source terminals.
 Insulated Gate Bipolar Transistor (IGBT)
The IGBT is a combination of a power MOSFET and a BJT. It has a three-layer
structure (N-P-N or P-N-P), with a MOSFET-like gate controlling the
conductivity of the BJT-like channel. IGBTs combine the advantages of low on-
resistance and high voltage capability, making them suitable for high-power
applications.