NAME : _____________________

ADM. NO. : __________________

EXPERIMENT- 01
DEVICE CHARACTERISTICS

AIM OF THE EXPERIMENT:

(i) To verify the V-I characteristics of SCR, MOSFET

(ii) To determine the latching current (I L), holding current (IH) and forward-break over
voltage of SCR.
(iii) To determine the trans-conductance (GM =ΔIC/ΔVCE) and drain-source resistance
(RDS=ΔVCE/ΔIC).
(iv) Plot the V-I characteristics of SCR, MOSFET from the data obtained from experiment.
(v) To observe the oscilloscopic view (x-y axis) of SCR characteristics
(vi) To observe turn on and turn off transient of MOSFET

APPARATUS REQUIRED:

Sl No Name of the Specification Model No / Serial no of Maker’s Quantity

Instrument the Instrument Name

CIRCUIT DIAGRAM:

Power Electronics Lab., IIT ISM Dhanbad,pg.1

 NAME : _____________________
ADM. NO. : __________________

Fig.1 Experimental setup for MOSFET and SCR characteristics testing

Power Electronics Lab., IIT ISM Dhanbad,pg.2

 NAME : _____________________
ADM. NO. : __________________

EXPERIMENTAL SETUP:

Fig. 2 Experimental setup for switching characteristics of MOSFET and oscilloscope view of
Thyristor

Power Electronics Lab., IIT ISM Dhanbad,pg.3

 NAME : _____________________
ADM. NO. : __________________

THEORY:
MOSFET: The MOSFET, like the BJT is a three terminal device where the voltage on the
gate terminal control the flow of current between the output terminals, source and drain. The
output characteristic of a MOSFET is plot between drain current I D as a function of drain-
source voltage (VDS) with the gate-source voltage VGS as a parameter.

Fig. MOSFET characteristic Fig. MOSFET

With gate-source voltage VGS below the threshold voltage VGS(TH) the MOSFET operates in
the cut-off mode. When VGS is increased beyond VGS(TH) drain current starts flowing. For
small values of VDS (VDS < (VGS – VGS(TH)) iD is almost proportional to VDS. This mode is called
“Ohmic mode” of operation.
Procedure:
Output Characteristics
(i) Connect voltmeter across gate-source and drain-source terminal, short gate ammeter
terminal, connect ammeter in series of drain terminal as shown by the dotted terminal
on the trainer kit.
(ii) Keep the gate-source voltage VGS to specific voltage by varying POT1. Gradually
vary the drain source voltage V DS by varying POT2 till MOSFET get turn on and note
the voltmeter reading VDS and ammeter drain reading ID.
(iii) Further increase the VDS and note ID.
(iv)For different values of VGS note VDS and ID.
Transfer characteristics
(i) Connect voltmeter across gate-source and drain-source terminal, short gate ammeter
terminal, connect ammeter in series of drain terminal as shown by the dotted terminal
on the trainer kit.

Power Electronics Lab., IIT ISM Dhanbad,pg.4

 NAME : _____________________
ADM. NO. : __________________

(ii) Keep the drain-source voltage VDS to specific voltage by varying POT2. Gradually
vary the gate source voltage VGS by varying POT1 till MOSFET get turn on and note
the voltmeter reading VGS and ammeter drain reading ID.
(iii) Further increase the VGS and note ID.
(iv)For different values of VDS note VGS and ID.
Observation
(i) Output characteristics
VGS VDS ID GM=ΔID/ΔVDS RDS=ΔVDS/ΔID

(ii) Transfer characteristics

VDS VGS ID

Threshold Voltage=………………
Graph
1. For calculating the values of G M, RDS plot the graph of VDS Vs ID and from the slop of
the characteristic curve determines the G M and RDS. Also note the pinch-off voltage
from the graph.
2. Plot the graph of VGS Vs ID. Also note the gate-source threshold voltage VGST from
the graph.
Result and discussion:
Conclusion:

Power Electronics Lab., IIT ISM Dhanbad,pg.5

 NAME : _____________________
ADM. NO. : __________________

SCR: With ig=0, VAK has to increase up to forward break over voltage V BRF before significant
anode current starts flowing. When voltage take over V BRF the voltage across the SCR drops
to VH.

Fig. SCR characteristics Fig. SCR

The magnitude of gate current has a very strong effect on the value of the break over voltage.
After Turn ON the SCR is no more affected by gate current.
Procedure
1. Connect voltmeter across anode-cathode terminal, ammeter in series with gate supply
and anode supply as shown by the dotted terminal on the trainer kit.
2. Vary the POT3 and set the gate current IG.
3. Now gradually increase the anode-cathode voltage VAK by varying the POT4 till the
SCR get turned on, note down the ammeter current I A, anode-cathode voltage VAK
reading. Also find break-over voltage VBR.
4. For different values of gate current note the values of VAK, IA and tabulate them.
5. For measuring latching current, put both POT3 and POT4 in minimum condition and
switch ON the switch. Increase anode cathode voltage V AK slightly, and apply gate
voltage. Some anode current will flow. If this current is less then latching current
removing gate voltage will make this anode current zero.
6. Apply more VAK and apply gate and remove gate and check whether SCR is latched or
not. Increase VAK further in small steps, at some value of anode current after removing
of gate voltage also the SCR will remain in on state; this minimum value of anode
current is the latching current of the SCR.
7. For measuring holding current, apply maximum V AK and apply gate voltage. High
value of anode current which is more than latching current will flow. Remove gate
voltage, as the SCR is latched anode current will continue to flow.
8. Now reduce the anode cathode voltage VAK gradually, at some stage the anode current
will suddenly reach zero value. The current at this stage is the holding current IH.
Observation
IG VAK IA

Power Electronics Lab., IIT ISM Dhanbad,pg.6

 NAME : _____________________
ADM. NO. : __________________

Latching Current IL=…………………. Holding Current IH=………………….

Gate Current IG=……………………. Breakover Voltage VBRO=…………….
Graph: Draw the V-I characteristic of SCR i.e. VAK Vs IA graph.
Result and discussion:
Conclusion:

Observation of SCR V-I characteristics on oscilloscope

Procedure:
(i) Connect SCR anode, cathode and gate from power section to oscilloscope view
section.
(ii) Connect the oscilloscope CH1 probe across the ANODE and CATHODE which
indicate the SCR voltage on X-axis.
(iii) Connect the oscilloscope CH2 probe across current sensing resistor (i.e.
cathode and supply common point), which indicate the SCR current on Y-axis.
(iv)Put oscilloscope in X-Y mode to plot SCR voltage and current.
(v) Vary the POT5 to set different gate current values or to trigger SCR at different
instance and observe the X-Y plot.
Observation of MOSFET switching characteristics on oscilloscope
Procedure:
(i) Connect MOSFET between G-D-S terminal and short dotted terminal in series with
load. Connect oscilloscope across D-S terminal of MOSFET.
(ii) Switch on the circuit and observe switching waveform across the drain-source
terminal of MOSFET.
(iii) Now connect the stray inductance L as stray inductor in series with load and
MOSFET and observe switching waveform across the drain-source terminal of
MOSFET. Note the spike coming in switching waveform because of inductance.
(iv)Now connect the Snubber circuit across the MOSFET. Observe the reduction in
voltage spike across the drain-source terminal voltage of MOSFET.
Result and discussion:
Conclusion:
Questions:

Power Electronics Lab., IIT ISM Dhanbad,pg.7

 NAME : _____________________
ADM. NO. : __________________

1) What do you mean by latching current and holding current?

2) What do you mean by break over voltage?
3) What would happen if gate is made positive with respect to cathode during the reverse
blocking of thyristor?
4) Discuss the output and transfer characteristics of power MOSFET.
5) What are the parameters on which turn on and turn off losses for a MOSFET
depends?
References:
(i) https://www.alldatasheet.com/datasheet-pdf/pdf/3045/MOTOROLA/IRF840.html
(ii) https://www.alldatasheet.com/datasheet-pdf/pdf/25111/STMICROELECTRONICS/
TYN612.html
(iii) M D Singh & K B Khanchandani. Power Electronics: McGraw Hill
Education (India) Private limited
Items to bring in lab:
(i) A4 size blanks sheets
(ii) Graph papers

Power Electronics Lab., IIT ISM Dhanbad,pg.8