Transistor

2SC3932
Silicon NPN epitaxial planer type

For high-frequency amplification/oscillation/mixing

Unit: mm

(0.425)
+0.1 +0.10
0.3Ð0.0 0.15Ð0.05

■ Features 3

● High transition frequency fT.

1.25±0.10

2.1±0.1
● S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine

5û
1 2
packing.

0.2±0.1
(0.65) (0.65)

1.3±0.1

■ Absolute Maximum Ratings (Ta=25˚C) 2.0±0.2

10û
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 30 V

+0.2
0.9Ð0.1
0.9±0.1
Collector to emitter voltage VCEO 20 V

0 to 0.1
Emitter to base voltage VEBO 3 V
Collector current IC 50 mA 1:Base
Collector power dissipation PC 150 mW 2:Emitter EIAJ:SC–70
3:Collector SMini3-G1 Package
Junction temperature Tj 150 ˚C
Storage temperature Tstg –55 ~ +150 ˚C Marking symbol : R

■ Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector to base voltage VCBO IC = 100µA, IE = 0 30 V
Emitter to base voltage VEBO IE = 10µA, IC = 0 3 V
Forward current transfer ratio hFE VCB = 10V, IE = –2mA 25 250
Transition frequency fT* VCB = 10V, IE = –15mA, f = 200MHz 800 1600 MHz
Base to emitter voltage VBE VCB = 10V, IE = –2mA 0.72 V
Common emitter reverse transfer capacitance Cre VCE = 10V, IC = 1mA, f = 10.7MHz 1 1.5 pF
Common base reverse transfer capacitance Crb VCE = 6V, IC = 0, f = 1MHz 0.8 pF
Power gain PG VCB = 10V, IE = –1mA, f = 200MHz 20 dB

*h Rank classification
FE

Rank T S
fT(MHz) 800 ~ 1400 1000 ~ 1600
Marking Symbol RT RS

425
Transistor 2SC3932

PC — Ta IC — VCE IC — I B
240 24 24
Ta=25˚C VCE=10V
Collector power dissipation PC (mW)

IB=300µA Ta=25˚C
200 20 20

Collector current IC (mA)

Collector current IC (mA)

250µA

160 16 16
200µA

120 12 12
150µA

80 8 8
100µA

40 4 50µA 4

0 0 0
0 20 40 60 80 100 120 140 160 0 6 12 18 0 100 200 300 400 500
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (µA)

IB — VBE IC — VBE hFE — IC

400 60 240
VCE=10V 25˚C VCE=10V VCE=10V
Ta=25˚C
350

Forward current transfer ratio hFE

50 200
Ta=75˚C –25˚C
Collector current IC (mA)

300
Base current IB (µA)

40 160
250
Ta=75˚C

200 30 120
25˚C

150 –25˚C
20 80

100

10 40
50

0 0 0
0 0.4 0.8 1.2 1.6 2.0 0 0.4 0.8 1.2 1.6 2.0 0.1 0.3 1 3 10 30 100
Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA)

VCE(sat) — IC fT — I E Cre — VCE

100 1600 2.4
Collector to emitter saturation voltage VCE(sat) (V)

Common emitter reverse transfer capacitance Cre (pF)

IC/IB=10 VCB=10V IC=1mA

Ta=25˚C f=10.7MHz
30 1400 Ta=25˚C
Transition frequency fT (MHz)

2.0

10 1002

1.6
3 1000

1 800 1.2

Ta=75˚C
0.3 600
0.8
25˚C
0.1 400
–25˚C 0.4
0.03 200

0.01 0 0
0.1 0.3 1 3 10 30 100 – 0.1 – 0.3 –1 –3 –10 –30 –10 0.1 0.3 1 3 10 30 100
Collector current IC (mA) Emitter current IE (mA) Collector to emitter voltage VCE (V)

426
Transistor 2SC3932

Zrb — IE PG — IE NF — IE
120 40 12
VCB=10V VCB=10V VCB=10V
f=2MHz
Reverse transfer impedance Zrb (Ω)

f=100MHz f=100MHz
Ta=25˚C 35
100 Rg=50Ω 10 Rg=50kΩ
Ta=25˚C Ta=25˚C
30

Noise figure NF (dB)

Power gain PG (dB)
80 8
25

60 20 6

15
40 4

10

20 2
5

0 0 0
– 0.1 – 0.3 –1 –3 –10 – 0.1 – 0.3 –1 –3 –10 –30 –100 – 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current IE (mA) Emitter current IE (mA) Emitter current IE (mA)

bib — gib brb — grb bfb — gfb

0 0 48
200
Reverse transfer susceptance brb (mS)

Forward transfer susceptance bfb (mS)

yib=gib+jbib yrb=grb+jbrb yfb=gfb+jbfb
VCB=10V VCB=10V VCB=10V
300
–10 – 0.4 40
Input susceptance bib (mS)

500 f=200MHz
IE=–5mA
–20 IE=–2mA – 0.8 32
300
600
f=900MHz
–5mA –2mA
–30 600 –1.2 24 500
500 f=900MHz
300 200 –2mA 600
–40 –1.6 IE=–5mA 16

900
–50 –2.0 8

–60 –2.4 0
0 10 20 30 40 50 –1.0 – 0.8 – 0.6 – 0.4 – 0.2 0 –60 –40 –20 0 20 40
Input conductance gib (mS) Reverse transfer conductance grb (mS) Forward transfer conductance gfb (mS)

bob — gob
12
yob=gob+jbob
VCE=10V 900
Output susceptance bob (mS)

10

600
8
IE=–2mA –5mA

6 500

4
300

2
f=200MHz

0
0 0.4 0.8 1.2 1.6 2.0
Output conductance gob (mS)

427
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2001 MAR