2SC3943

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Power Transistors

2SC3943
Silicon NPN epitaxial planar type
Unit: mm
For video amplifier 10.0±0.2 4.2±0.2

0.7±0.1
5.5±0.2 2.7±0.2

4.2±0.2
■ Features

7.5±0.2
φ 3.1±0.1

16.7±0.3
• Small transition frequency fT
• Small collector output capacitance Cob
• Full-pack package which can be installed to the heat sink with one
screw 1.3±0.2
1.4±0.1

Solder Dip
14.0±0.5

(4.0)
0.5+0.2
–0.1
0.8±0.1
■ Absolute Maximum Ratings TC = 25°C
Parameter Symbol Rating Unit 2.54±0.3
5.08±0.5
Collector to base voltage VCBO 110 V
1 : Base
Collector to emitter voltage VCER 100 V 2 : Collector
1 2 3
VCEO 50 V 3 : Emitter
EIAJ : SC-67
Emitter to base voltage VEBO 3.5 V TO-220F-A1 Package
Peak collector current ICP 300 mA
Collector current IC 150 mA
Collector power TC = 25°C PC 8 W
dissipation Ta = 25°C 2.0
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

■ Electrical Characteristics TC = 25°C


Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current ICEO VCE = 35 V, IB = 0 10 µA
Collector to base voltage VCBO IC = 100 µA, IE = 0 110 V
Collector to emitter voltage VCER IC = 500 µA, RBE = 470 Ω 100 V
VCEO IC = 1 mA, IB = 0 50 V
Emitter to base voltage VEBO IE = 100 µA, IC = 0 3.5 V
Forward current transfer ratio hFE VCE = 5 V, IC = 100 mA 20
Collector to emitter saturation voltage VCE(sat) IC = 150 mA, IB = 15 mA 0.5 V
Transition frequency fT1 VCE = 10 V, IC = 10 mA, f = 10 MHz 300 MHz
fT2 VCE = 10 V, IC = 110 mA, f = 10MHz 350 MHz
Collector output capacitance Cob VCB = 30 V, IE = 0, f = 1 MHz 3.5 pF

212
Power Transistors 2SC3943

PC  T a IC  VCE IC  VBE
12 240 120
TC=Ta TC=25˚C VCE=5V
Collector power dissipation PC (W)

TC=100˚C
10 200 IB=5.0mA 100

Collector current IC (mA)

Collector current IC (mA)


25˚C
4.5mA –25˚C
8 160 4.0mA 80
3.5mA

3.0mA
6 120 60
2.5mA

2.0mA
4 80 40
1.5mA

1.0mA
2 40 20
0.5mA

0 0 0
0 40 80 120 160 200 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1.0
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

VCE(sat)  IC hFE  IC fT  I E
10000 600
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=10 VCE=5V VCB=10V


10 f=10MHz
Forward current transfer ratio hFE

3000 TC=25˚C

Transition frequency fT (MHz)


500

3 1000

400
1 300 25˚C

100 300
TC=100˚C
0.3
25˚C
30 –25˚C
TC=100˚C 200
0.1
10
–25˚C
100
0.03
3

0.01 1 0
1 3 10 30 100 300 0.1 0.3 1 3 10 30 100 –1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA)

Cob  VCB Area of safe operation (ASO)


6 1000
IE=0 Single pulse
Collector output capacitance Cob (pF)

f=1MHz ICP Ta=25˚C


TC=25˚C 300
5
t=10ms
Collector current IC (A)

100 IC
100ms DC
4
30

3 10

3
2

1
0.3

0 0.1
1 3 10 30 100 1 3 10 30 100 300 1000
Collector to base voltage VCB (V) Collector to emitter voltage VCE (V)

213
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2001 MAR

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