Transistor

2SD0602A (2SD602A)
Silicon NPN epitaxial planar type
Unit: mm
For general amplification
Complementary to 2SB0710A (2SB710A) 0.40+0.10
–0.05
0.16+0.10
–0.06

1.50+0.25
–0.05
2.8+0.2
–0.3
■ Features

0.4±0.2
• Low collector to emitter saturation voltage VCE(sat)

5˚
• Mini type package, allowing downsizing of the equipment and
1 2

(0.65)
(0.95) (0.95)
automatic insertion through the tape packing and the magazine
1.9±0.1
packing 2.90+0.20
–0.05

10˚

■ Absolute Maximum Ratings Ta = 25°C

1.1+0.2
–0.1

1.1+0.3
–0.1
Parameter Symbol Rating Unit
1: Base

0 to 0.1
Collector to base voltage VCBO 60 V 2: Emitter
Collector to emitter voltage VCEO 50 V 3: Collector
EIAJ: SC-59
Emitter to base voltage VEBO 5 V Mini3-G1 Package
Peak collector current ICP 1 A
Marking symbol： X
Collector current IC 500 mA
Collector power dissipation PC 200 mW
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current ICBO VCB = 20 V, IE = 0 0.1 µA
Collector to base voltage VCBO IC = 10 µA, IE = 0 60 V
Collector to emitter voltage VCEO IC = 10 mA, IB = 0 50 V
Emitter to base voltage VEBO IE = 10 µA, IC = 0 5 V
Forward current transfer ratio *1 hFE1 *2 VCE = 10 V, IC = 150 mA 85 160 340
hFE2 VCE = 10 V, IC = 500 mA 40
Collector to emitter saturation voltage *1 VCE(sat) IC = 300 mA, IB = 30 mA 0.35 0.6 V
Transition frequency *1 fT VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 6 15 pF
Note) *1: Pulse measurement
*2: hFE Rank classification
Rank Q R S No-rank
hFE1 85 to 170 120 to 240 170 to 340 85 to 340
Marking symbol XQ XR XS X
Product of no-rank is not classified and have no indication for rank.

Note) The part number in the parenthesis shows conventional part number.

Publication date: April 2002 SJC00191BED 1

2SD0602A

PC  Ta IC  VCE IC  IB
240 800 800
Ta = 25°C VCE = 10 V
Ta = 25°C
Collector power dissipation PC (mW)

700 700
200 IB = 10 mA
9 mA

Collector current IC (mA)

Collector current IC (mA)

600 8 mA 600
7 mA
160 6 mA
500 5 mA 500
4 mA
120 400 400
3 mA

300 300
80 2 mA

200 1 mA 200
40
100 100

0 0 0
0 40 80 120 160 0 4 8 12 16 20 0 2 4 6 8 10
Ambient temperature Ta (°C) Collector to emitter voltage VCE (V) Base current IB (mA)

VCE(sat)  IC VBE(sat)  IC hFE  IC

300
Collector to emitter saturation voltage VCE(sat) (V)

100 100
IC / IB = 10 IC / IB = 10 VCE = 10 V
Base to emitter saturation voltage VBE(sat) (V)

30 30
250

Forward current transfer ratio hFE

Ta = 75°C
10 10
200 25°C
3 3
25°C
−25°C
1 1 Ta = −25°C 150
75°C
Ta = 75°C
0.3 0.3
100
25°C
0.1 −25°C 0.1
50
0.03 0.03

0.01 0.01 0
0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A) Collector current IC (A) Collector current IC (A)

fT  I E Cob  VCB VCER  RBE

240 12 120
IE = 0
VCB = 10 V IC = 2 mA
f = 1 MHz
Ta = 25°C Ta = 25°C
Ta = 25°C
Collector to emitter voltage VCER (V)
Collector output capacitance Cob (pF)

200 10 100
Transition frequency fT (MHz)

160 8 80

120 6 60

80 4 40

40 2 20

0 0 0
−1 −3 −10 −30 −100 1 3 10 30 100 1 3 10 30 100 300 1 000
Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (kΩ)

2 SJC00191BED
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2001 MAR