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Introduction to Semiconductor Devices

By Prof. Naresh Kumar Emani | IIT Hyderabad

Join (/update_profile_and_register?user_email=vaidyahd21@gmail.com&raw_slug=/noc24_ee99) Learners enrolled: 227

Introduction to Semiconductor Devices _ Introduction

ABOUT THE COURSE :

Semiconductor devices are at the heart of the present technological revolution, and they are increasingly prominent in our daily life. This course
develops the basic concepts necessary to understand the fundamentals of semiconductor devices. We will apply these concepts to gain insight into
the operation of various semiconductor devices such as pn junction diodes, MOSFETs, solar cells and LEDs. This course is primarily directed for
undergraduate students pursuing ECE/EE or related programs.

INTENDED AUDIENCE : Any Interested Learner.

INDUSTRY SUPPORT : Semiconductor Industry – Any company working in Semiconductor IC Design and Testing Companies in Power Electronics
and Power Systems domain

Summary

Course Status : Upcoming

Course Type : Core
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Duration : 12 weeks

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Electrical, Electronics and Engineering

VLSI design

Credit Points : 3

Level : Undergraduate

Start Date : 22 Jul 2024

End Date : 11 Oct 2024

Enrollment Ends : 29 Jul 2024

Exam Registration Ends : 16 Aug 2024

Exam Date : 26 Oct 2024 IST

Note: This exam date is subjected to change based on seat availability. You can check final exam date on your hall ticket.

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Course layout

Week-1 : Semiconductors in daily life, semiconducting material properties, energy levels in atoms, energy band formation, bandgap and material
classification, electrons and holes, effective mass

Week-2 : Carrier properties – intrinsic carrier density, Fermi level, donor and acceptor impurities, Fermi level in extrinsic semiconductors,
temperature dependence of carrier density, generation and recombination of carriers

Week-3 : Thermal motion of carriers, carriers under electric field, mobility and drift current, diffusion of carriers, general expression for current in a
semiconductor, energy bands under electric fields

Week-4 : pn junction electrostatics, fixed and free charge, depletion approximation, electric field at the junction, built-in potential, step junction vs
linearly graded junction, energy band diagram of a PN Junction and quasi-Fermi levels

Week-5 : pn junction under applied bias, minority carrier injection and spatial variation in depletion and quasi-neutral regions, band-bending under
applied bias, ideal diode equation

Week-6 : Diode non-idealities, breakdown, depletion and diffusion capacitance, p-i-n Diode, Metal Semiconductor Junctions

Week-7 : Ideal MOS capacitor structure, Qualitative analysis of field effect, block charge, electric field and potential diagrams, energy band diagrams,
Accumulation and inversion regimes, Gate voltage drop across a MOS device

Week-8 : Threshold voltage of a MOS device, Capacitance-Voltage(CV) measurements, HFCV and LFCV of a MOS capacitor, Non-idealities in a MOS
capacitor – work function difference and flatland voltage, tunneling over gate barrier and leakage current, high-k gate dielectrics
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Week-9 : Long Channel MOSFETs, energy band diagram and qualitative understanding (https://swayam.gov.in/nc_details/NPTEL)
of MOSFET operation, ID-VD and ID-VG relationships, square
law theory of MOSFET, sub-threshold slope, performance metrics of a MOSFET

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Week-10 : Technology scaling and Moore’s law, qualitative understanding of Short channel effects – velocity saturation, channel length modulation,
drain induced barrier lowering (DIBL), differences in IV characteristics of long and short channel MOSFETs, overview of modern FETs (FinFETs,
tunnel FETs and nanowire transistors)

Week-11 : Optoelectronic devices in daily life, III-V Semiconductors, direct and indirect bandgaps, optical absorption, pin photodetectors, solar cells,
open circuit voltage and short circuit current

Week-12 : Light emitting devices – Heterostructures, LEDs and their luminescent efficiency, double heterostructure and population inversion, diode
lasers, LI characteristics and threshold current

Books and references

1. Semiconductor Device Fundamentals, R. F. Pierret, Prentice-Hall, 1996.

2. Neamen, Donald A. Semiconductor physics and devices: basic principles. New York, NY: McGraw-Hill, 2012.

Instructor bio

Prof. Naresh Kumar Emani

IIT Hyderabad
Dr. Naresh Kumar Emani is an assistant professor in the electrical engineering department of Indian Institute of Technology Hyderabad. Prior to
joining IIT Hyderabad he worked as a Scientist at Data Storage Institute(A*STAR), Singapore and Taiwan Semiconductor Manufacturing
Company(TSMC), Hsinchu, Taiwan. He received his MTech degree in Microelectronics from IIT Bombay, and PhD degree from Purdue University. His
research interests are in the areas of Dielectric Nanophotonics, Plasmonics, Silicon Photonics and Solar Photovoltaics. Further details can be found
on his webpage https://iith.ac.in/~nke/

Course certificate

The course is free to enroll and learn from. But if you want a certificate, you have to register and write the proctored exam conducted by us in person
at any of the designated exam centres.
The exam is optional for a fee of Rs 1000/- (Rupees one thousand only).
Date and Time of Exams: 26 October 2024 Morning session 9am to 12 noon; Afternoon Session 2pm to 5pm.
Registration url: Announcements will be made when the registration form is open for registrations.
The online registration form has to be filled and the certification exam fee needs to be paid. More details will be made available when the exam
registration form is published. If there are any changes, it will be mentioned then.
Please check the form for more details on the cities where the exams will be held, the conditions you agree to when you fill the form etc.

CRITERIA TO GET A CERTIFICATE

Average assignment score = 25% of average of best 8 assignments out of the total 12 assignments given in the course.
Exam score = 75% of the proctored certification exam score out of 100
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Final score = Average assignment score + Exam score

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YOU WILL BE ELIGIBLE FOR A CERTIFICATE ONLY IF AVERAGE ASSIGNMENT SCORE >=10/25 AND EXAM SCORE >= 30/75. If one of the
2 criteria is not met, you will not get the certificate even if the Final score >= 40/100.

Certificate will have your name, photograph and the score in the final exam with the breakup.It will have the logos of NPTEL and IIT Hyderabad .It will
be e-verifiable at nptel.ac.in/noc (http://nptel.ac.in/noc).

Only the e-certificate will be made available. Hard copies will not be dispatched.

Once again, thanks for your interest in our online courses and certification. Happy learning.

- NPTEL team

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