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thereto.
·•·
.
DA 36-039 SC-87475 EDL-M397
JOHN REINDEL
XEROX
ASTIA
4 ilpL ■ »f^I
TrFOiB aj
ELECTRONIC
DEFENSE
LABORATORIES
MOUNTAIN VIEW. CALIFORNIA
3
■
EDL-M397
TECHNICAL MEMORANDUM
No. EDL-M397
15 August 1961
John Reindel
R. E. Booth
Head
Tubes and Components Section
11
EDL-M397
Addendum 1
19 December 1961
ERRATA
0=
' ^ V^vksl (4)
Page 23. In the last line on the page, change'T "to"P ".
Page 33. In the lower part of Figure 26, the words "BYPASS
CAPACITOR" should be shown to refer to the 1/16- by
7/16-inch rectangular block just to the right of the shaded
area.
Page 67, In the first line of Section 4.4, change "in the
instant report" to "in this report".
- 1 -
EDL-M397
Addendum 1
19 December 1961
Page 32. In the ninth line from the top of the page, change
"2N2939" to "1N2939".
2 -
EDL-M397
CONTENTS
1. ABSTRACT 1
2. INTRODUCTION 1
3. 1 Mechanism of Tunneling 1
3. 2 Diode Circuit Parameters 2
3. 3 Diode Construction 8
3. 4 Measurement of Diode Parameters 9
3. 5 Stability Criteria 13
3. 6 Biasing Technique 14
4. 1 Oscillators 15
4. 2 Amplifiers 23
4. 2. 1 Hybrid Technique 40
4. 2. 2 Circulator Technique 48
4. 2. 3 Broad- banding Techniques 48
4. 2.4 Broad-band Stabilizing Network 52
4. 2. 5 Amplifier Noise Figure 55
4. 3 Frequency Converters 60
4. 4 Superregenerative Amplifier 67
6. SUMMARY 71
7. REFERENCES 73
■ in
EDL-M397
ILLUSTRATIONS
3 Junction Conductance . 4
8 Terminal Capacitance 7
15 Tracing Circuit 27
iv -
EDL-M397
~ ILLUSTRATIONS -- Continued
19 Single-Tuned Circuits 21
23 Transducer Gain 28
32 Capacitive-Tuned Circuit 39
36 Hybrid-Coupled Amplifier . 44
v -
EDL-M397
ILLUSTRATIONS -- Continued
37 Hybrid ^oupledr"Amprine:r'Emplpy,i
Electromagnetic ^üarterr^a^^ • • • • • 46
., 41
' ■
Wide-banding Eilter/Nltwork^ • • • 51
53 Superregenerative Amplifier 70
- vi -
EDL-M397
DEFINITION OF SYMBOLS
transducer gain.
velocity of light.
barrier capacitance.
diffusion capacitance.
capsule capacitance.
'.' .'■'"'■■'
. °
■
IXi;i*&
\y-:tX.
f£'4f-'£
'3^f-l-
- v
- ■■■•':''X'
■
•Of ^^'•-, ■
f ■ 1 -
■ ■■■
:vf-v
5K ,
% • " ''»~; ,''
0
- T;
>V--K- - ;
noi'se figure.
■" '
''..':/ ^-?r-'
F :
diffusion conductance.
.gdV:i
gt.: ftuhhei: conductance.;;
g1 conversion conductance,
VI1 -
EDL-M397
Ge germanium.
,
' *
'-■■';■■''■,;
7-v*r,-;,.;;:. ■...,.•'-;•. ";:,'M4 \v::\r*?^:.,-'!=c;i'^:^.'v: mixer input resistance...-^ ^/% f .^'^'^^ y-r^V^ ^'*■ ^rl.- ■ ,;..■
"ü-^'" , Cr^'j'^ 'Z^:T~':' ■ cavity outer radius. ■ ■. ...w^-»- . .^ ,. .,^. .. ...'-7 , A w . ^,;., W* ;*. 0 " « ■■ •„. .■
'. • ' •" "'^ ■ -■'-■'1..',|':' '■'■ J*?. ■■■■''■'■■' ■'i.-~. ii&fL*. *ri'..-'> "■':■'..'
"■•■--■=. , ■: ' • -e» .r* ^ %^ . ^-'-\--
i<tr
< bulk resistance.
sV;-
vm
EDL-M397
.i".
- IX
EDL-M397
John Reindel
1". ABSTRACT.
x
INTRÖDUCjfÖfc ^v^f ^* r^«-' ■
: , -•■.^ «i't • , .*■
^ipi
v
V.a^-.-ß^i.^.-r' ^v^-^:w. >:;^,t'r*.^^^ ^ ^
^ j.
principal: ch'aracte'rl^sticjs^ä^riegatijve^differsential.xe'aistartc'e'ove as c*
'# 4
V
y^0*^ ..
^v^JJ:
«;/^.l^*
'«ji (b.).ft:;::..J.discuss experimental tunne'lrdibde.diTc.uits'-recently
■ fabricated at EDL.
3. 1 Mechanism of Tunneling.
3. 1 - Continued.
ode ätfth'e?input«ter-.i
fled bv the other diode circuit parameters^andMs.; therefore, frequency ■• - f.;«.i
'dependent and greater than C, /g .• --"..' -^^..v ^v"^ --"'^ ' ^
i».'f^ÄÄ^
It is common practice to exclude the ca/psuJ.e^capa^itan^^sjj^^
negligible, and to .include; the diffusion päratri,eJeVsfWith^
- 2
EDL-M397
■'ff
Figure; i , ^^.^■Xr^-^fU. ^ ^ » —;
^V^r^r^;
.Static Characteristic Curve"bf'S.yjlV.a'nia;. .-^ ■ A/-^,-. ■-..-^.■s^
^*.
«»H'■•
%
.D4115A Tunnel Diod'e ... 1 ^^ •'''^•^. ^'^ ^"^^^
c.
3 -
EDL-M397
.v ■"
-JS;«^
cS1"" ".^ Ä*•^' 0 ^:r.^••'*■* .0. 0.5
Figure 3
Junction Conductance
4 -
EDL-M397
3.2 Continued.
G
E^ 5D
w LC + R g
._2 - „.,,c.. .
rC (2)
\2
R C
ifef-;,2 , s D
| . ,, ■ D ^i, ■s*D
f i
/J
Representative: plots ".of G^ as a function of frequency are shown in
Figure 6. .The conductance can be plotted directly as a function of
frequency^'.^ if ;the diode is assumed biased at the point of maximum
negative conductance The negative conductance of a typical tunnel
diode (Figure 7) shows increasing values of series inductance. The
terminal conductance is zero at the resistive cutoff frequency, f .
From Equation
->
1, f can be shown to be:
r
f =
D D V? (3)
5 -
■■ ■■ ■■ .■■
EDL-M397
Ls Rs
o nnnn—MA
Or
i,'''
,».-i .<-\/
,•'. .■■•■ -■. ' '' ..-;.•;•. ' ui:*." if:.
Figure 5 -
00
o
10
.
1
\ Gc
— 5 \
z.
'<r^ 3 Gc
1
1
0 ■ \\
0-1 Gc
■ •■■.
LU
o
< -5 ■ ■ \
v;
H
O. '■ \
.■=>;■•
Q
z: - .-10
o
o. .. "'■':'.
V^/
LU .- •- is 0.4
Q ' •0.1 . ■ ■ :0.2 ..-, 0.3 ..
O
VOLTAGE.,-- VOLTS.
Figure 6
Variation of Junction Conductance with
Bias at Various Frequencies
6 -
EDL-M397
30
J
, L3 = 5nh
V)
25
o
X
Z
-J
_J,.. 20
r\lz = 2nh
(
UJ 1
o
■K.^"^
.15
/
";."■.■."'-' V
■ ^ ■' '
•v i-
^/
z -
o
o b
1 [I Lo = Onh
'' ■':. '■' '
25
■ '■■V'-;-._. 3
/Y
■•■•.•';.
Lv
CO
Q 20
<
< ■ ''■$'■■■■■' :.i
o
15 :■ A- ■ .#
..•..;•: , ■"■:■"■
/
10
r
o
z
<
,-;s
■'L'^O
AL|
< ■■->>■" _ .
" ■' '.
Q-
< \
..,o
100. Mc. I Gc 10 Gc
FREQUENCY..
Figure 8
Terminal Capacitance
- 7 -
EDL-M397
3. 2 - - Continued.
where
R =1/
D V
It can be seen from Equation 3 that f is not a function of capsule in-
ductance Ls. Figure 7 shows the intercept of the conductance curve
(for L - 0) with the frequency axis as fr. The curves also indicate
that the conductance is nearly constant from dc to about 1/3 of f when
the inductance is low (less than 0. 5 nanohenry). If the diode capsule
inductance or external lead inductance is increased (to 2 and 5 nanohenries),
the conductance changes radically at a much lower frequency. At the
inductive (or. self) resonant frequency, f , the inductance and capaci-
tance .will resonate if the device terminals were ac short circuited:
2TTL C (4)
s D R
02CD
-The terminal capacitance varies-with frequency .' .as shown in Fig-
ure 8; this variationj.is'negligible at low frequencies, but is large near
the c'utoff frequencies. Cg is negative above fg, i. e. , the terminal
süsceptance is-inductive.
3. 3 Diode Construction.-
- 8
■ . . ■
EDL-M397
3. 3 -- Continued.
a peak current degradation phenomenon that so far has not been com- : .
pletely solved. In addition, the GaAs diodes inherently have!a'higher.'
noise figure than either the Ge or GaSb diodes. GaSb diodesvjv.ith'an
especially low noise figure have been introduced, r U * . t- .jfy.-* . . v.
Since the junction area determines the diode current (as well as the
capacitance); and therefore the available power output, the high-fre-
quency diodes have very-low power capability (estimated power at
10. 8 gigacycles for ä diode having a capacitance of 0. 8 picofarad is
2 microwatts^). In addition to the single-spot diode, other geometries
have.been suggested^ ■ as a means to obtain greater power capacity at
high frequencies. Of the sugjgested geometries, the most likely tobe
used is the narrow-line distributed diode/either in straight or in circu-
lar form (Figure 10). In addition to.the'.problems of forming such a .
junction, there will be moding problems, i. e. , the problem of sup- .
pressing unwanted spurious oscillations. Although a solution of these
problems has been suggested, no distributed diode circuit has yet
been built and tested. ; ''.. . ■' .
The series elements are readily determined for the four parameters
.
EDL-M397
METAL LID
METAL CASING
CERAMIC
SEMICONDUCTOR
BASE
METAL CASING
Figure 9
DIELECTRIC STRIPS
SEMICO
BIAS =S± d&=
SUPPLY
- 1.0
EDL-M39'
3.4 -- Continued.
where
h is cavity height (cm)
r is outer radius of cavity
\x is permittivity of cavity
r is effective diode radius as defined by the equation
where
K is a constant.
■. 1
Wh env(Z' *s P^otte<^ versus r? on a semilogarithmic scale, the curve
(a straight line) intersects the abscissa at a value given by r = r , since
eff 2
- 11 -
EDL-M397
BYPASS
CAPACITOR,
THIN TEFLON
LAYER
CABLE
Figure 11
Cylindrical Cavity for Measurement of
Frequency of Oscillation
DC LOAD LINE
•- • v-
V=-vB + IQ (R-Ro)
.• Vß
Rn0 —' -— < RD + R.S-'-:
I,
' B. ■
Figure 12
Graphic Illustration of Biasing Requirement
12
EDL-M397
3,4 Continued.
ir
(8)
E 1+R
SSD
and
R, R
s
+ R^.
D
(9)
3. 5 Stability Criteria.
L g . ■ . 1
-^<R < — Condition A
T
C. «D
•■- 13
EDL-M397
3.5 - Continued.
R
< i ConditionB
and
< R Condition C ■
D'
19
A new theorem on the stability of tunnel diodes"' states that Conditions
B and C are sufficient but not necessary, because C can be replaced by
the somewhat milder requirement
<c
where
^TT f RC
(H)
r
•14
EDL-M397
3.6 - Continued.
with a circuit where RQ< Rp + Rs (Figure 13). This circuit also reduces
the external inductance of the voltage supply, Vg, by a factor of approxi-
mately (R^RQ)2;
The negative resistance of the tunnel diode can be put to use in a va-
riety of circuits with many useful properties. Two major types of
operation are possible: (a) small-signal operation around a bias point
in the negative-resistance region,, and (b) large-signal switching. Only
the small-signal operation at microwave frequencies will be considered
here. Three types of circuits will be analyzed and described in detail;
in these, the negative resistance provides oscillation, amplification,
and conversion. Other circuits will be mentioned briefly.
4. 1 Oscillators.
15 -
m EDL-M397
N
/ \
/
L \
I s Rs
\
\
Cn 'T-
I
\
I
/ DIODE
\
/
Ro \ y
vV\A
—1|—J)&-
. ■. . Figure 13
Bias Circuit for Stable DC-Operation .
-. 16
EDL-M397
CENTER CONDUCTOR
' ■• '•'. "l' ■•. v ... :
' ■. ■
OUTER-CONDUCTOR
D lODE;. .
BRASS DISK
BARIUM TITANATE
SOLDERED TO
BRASS DISKS
Figure 14
Coaxial Bypass Capacitor with
Low Series Inductance
OSCILLOSCOPE
DISPLAY
Figure "'IS
Tracing Circuit
17
EDL-M397
UJ
o a
o o z
t- o — ■M
z o a
o — «■
UJ u w _i
«/J < CO "> .
3 a. <
CO a: UJ
</» 03 z
o — UJ 1-
z UJ
S 1- X o '
UJ H z
OC UJ < .
O M z
<o — UJ oe
z UJ UJ (-
CO 3 a oc
—
— z 1- _l o
z — ÜJ O' z
H S CQ X 00
c
0
vD
UJ
0)
H
0)
■0
00 0
i-i
g
S
H
- 18 -
EDL-M397
in
u
H
a»
^ P
0) ■0
h Ö
00
k 3
u
h
u
- 19-
EDL~M397
G.E. .
■1N2939 ' 6 :
; ■.1.5 5 , 6.6 2. 2 i.o ■
Sylvania
D4115 0.4 1. 0 8 18 >2 1.8
Microstate
M 5225 0. 3 2 2.5 25 >5. 5 3. 5
Figure 18
Typical Characteristics of Some Commercially
Available Microwave Tunnel Diodes
- 20 -
EDL-M397
Ls - '., •• R5-
ZZ Co
Ls R5
o ^^V^ ywv-
-Rr -r-Cr
-
.'
Figure 19
Single-Tuned Circuits
21
■"
EDL-M397
4. 1 - Continued.
i
u
1
LC,
w (13)
R> R + R/ Condition E
D s L
and
L/CD - (Rs + RL) RD. Condition F
'l - R /Rn
1 s D
(14)
iL C^ 1+ R /RT
.\ ext D| s L
The requirement for stable oscillation is that Rj^ > Rp. Assuming
that Rs « RJ-J, the available power output is given by
v2 ■ ^ fz "
(15)
21
where V is the linear rms voltage swing.. Equation 15 shows how the
-22'-'
EDL-M397
4. 1 -- Continued.
4. 2 Amplifiers.
The single series- and shunt-tuned circuits in Figure 19, A and B, can
also be, used for amplification, provided the stability requirements of
Condition A are met. The'generator and load resistance may be sepa-
rated as shown in Figure 22, A and B. The transducer gain, AT, is
defined as the ratio of power from the amplifier'delivered into the load,
P , and the available power from the generator, Pow. Assuming
23. -
EDL-M397
BIAS SUPPLY.
Figure ZO
Experimental C-band Oscillator
24 -
EDL-M397
CAVITY
MICROMETER
Figure 21
■ .
Tunable Cavity in Waveguide
-.25
EDL-M397
I—vW^-6
L L R
EXT S S
Cu -T- S-Rr
-0-^W^/\^/V.
Ls h
H>
GL
^AA/^
v0
(B) PARALLEL RESONATED AMPLIFIER
Figure 22
•Sirtgle-Tuned Amplifier Circuits
26
EDL-M397
4.2 -- Continued.
4 R R,
g L (16)
Ts 2
R + R. - Rn
av g L D;
and 4 G GT
g L
(17)
Tp
+ G G
av Pa L - D
where the second subscripts s and p refer to the circuit configuration,
s for series and p for parallel. ° The reflected gain, Ap, is defined
as the ratio of power from the amplifier delivered back into the gener-
ator resistance, P , and the available power from the generator, Pav-
At resonance, AR is given by:
2
g (18)
Rs
av
and
(19)
Rp
av
The transducer gain can be made much larger than the reflected gain
by making [R - R or G - G small.
(20)
Ts
R
D
1 -
R
and
A (21)
Tp
_D
G
27
EDL-M397
TRANSDUCER GAIN
ID
O
<
(9
■EDL-U77
Figure 23
Transducer Gain
28 -
EDL-M397
.4.2. -- Continued".
1 •
(22)
Tp
-^ - (4 7rf')
= -arccot(2T:f0Z0CD). (24)
29
EDL-M397
2N2939 DIODE
RIAS NETWORK \ft
I Ikmvvm^w
I ^^Z^ZZZZZZZMZ^ZZZZZZZZZZZZZZZZZZZZ
^^^^^^^^^^^^^1 1
CB BYPASS
TUNING CAPACITOR
CAPACITOR
MICROMETER
9 9
BIAS
O— vW- +«■ rVrVi
^ ^
X"
Figure 24
Single-Tuned UHF Amplifier
30 -
,
EDL-M397
METAL STRIPS
CONNECTOR
K\\\\\\\\\\\V\\\\\m
~
1 ^\\\\\\\\\\\\\\\\\\^^^^^
DIELECTRIC STRIP
^^^^^^^^^^ZI^ JL
COPPER
STRIP LINE
BYPASS
FEED-THROUGH
CAPACITOR
2N2939 BIAS RESISTORS
DIODE
HOLDER
18
MEASURED PERFORMANCE
3AN DWI DTI1
AT(DB} B(Mc) BVAT MC
1^IT H G All1
S ET AT 17 + 17 52 370
17 / \ 19 46 410
>
22 27 340
24 21 330
Q
/ \
16
GAIN AND BANDWIDTH
/ OBTAINED BY VARYING
|i \ TAP POINTS
15
O
y \
y
14 }
/
/I \
/
i
i
i
i
i
i vN
10
^
— B ANDNIDT H- V^
L ., L. L 1, ...
270 300 350 400
Figure 25
Single-Tuned Stripline One-port Amplifier
- 31 -
EDL-M397
4.2 Continued.
where
A is the transmission line wavelength at the desired frequency,
£_. and Z is the characteristic impedance of the line.
t = (25)
w) z0cD^r
where
c is the velocity of light, and
i is the relative dielectric constant,
r
The amplifier used a 2N2939 diode fitted into a BNC connector. Ampli-
fier gain was measured using reflectometer techniques as shown in
Figure 26. Gain could be varied from 10 to 30 db by adjusting the tap
point on the transformer. The B N/Ä-J- was greater than 300 megacycles.
A photo of the amplifier is shown in Figure 27; a similar model with
separate input and output connectors is shown in Figure 28. The trans-
ducer gain and the reflected gain can be adjusted by moving the trans-
former tap points. Figure 28 shows a measured difference of A-p and
AD of greater than 10 db. This is achieved when GL ~ Gp and G_ «GT ,
as indicated by Equations 15 and 17,
32
EDL-M397
X-Y RECORDER
GAIN ^
SWEEP
OSCILLATOR
FREQUENCY
I
CRYSTAL CRYSTAL
REFLECTOMETER
DETECTOR DETECTOR
X
rVW
VARIABLE
Ü
ATTENUATOR
BYPASS
CAPACITOR
r
BIAS
r^ JL
i DIODE
SHORTED
TRANSMISSION LINE
/77
L J
Figure 26
Gain Measurement Technique for
One-port Amplifier
33 -
EDL-M397
u
0)
vj <;
X
DC >
U
0
a
34
EDL-M397
>
M/ |0 V
DB
x
COUPLER
X
10 DB COUPLER / I 16 DB COUPLER
R. PAD
TRANSMISSION
VW—o GENERATOR
BIAS
LINE „ __
2N2939 CB^
15
\
L FORWARD
\ WAVE
m '/
Q
<
y
13
/ \
10 >
REFLECTED \
WAVE
^ *"" i
300 310 320 330 340
FREQUENCY -- MEGACYCLES
Figure 28
Single-Tuned Stripline Two-port Amplifier
35
.EDL-M397
V>
I- o
Q. U
5:
< C
o 0
I- u
o
UJ
to "?
tn
<n tn
<n
o 0
Ü
a; T3
Ö
n)
■H
u
DC
O u
a:
/r^AAN
a. v p.
< D
ft: \ - Il
o
o H(-
\MM )
fv\W
e>
^VW
J
•> >- -1
Tf (K _l
ro =3 uj
• o o
— o:
- 36 -
EDL-M397
FREQUENCY -- GIGACYCLES
Figure 30
S-band Amplifier Gain
- 37 -
EDL-M397
S
<;
rH ^
CO U
3
4)
Ü0 S
38
EDL-M397
• BIAS
^ A . l/
< f> TUNING
^ CAPACITOR
<> Ro
>
*
* l
*l m
• i
~d **
VOLTAGE NODE
Figure 32
Capacitive-Tuned Circuit
- 39 -
EDL-M397
4. 2 -- Continued.
In operation under ideal conditions, the input signal power splits evenly
and is amplified by the matched one-port amplifiers at ports 2 and 3.
The amplified waves cancel at port 1 and add in-phase at port 4. Ideally,
the gain of the hybrid amplifier equals the gain of a single reflective
one-port amplifier.
The conditions for ideal operation are that (a) the one-port amplifiers
are exactly alike, (b) the hybrid is perfect (i. e., has no loss, equal
power split and infinite directivity), and (c) perfect input and output
match, i. e. , reflection coefficients at ports 1 and 4 (p^ and p^) equal
zero. If condition C is not met, the gain at port 4 for the hybrids shown
in Figure 36 is
40 -
EDL-M397
INPUT-OUTPUT
RF CONNECTOR
CENTER
CONDUCTOR
TUNING PROBE
TO BIAS CONNECTOR
WITH I MIL EPOXY
Figure 33
Schematic of Capacitive-Tuned S-band Amplifier
41
EDL-M397
--nTr—"-
a)
T3
C
m I
0)
H
l
>
- 42
EDL-M397
CD
Q
<
Figure 35
Dynamic Range of Amplifier
- 43
EDL-M397
r RI
-►BIAS
1
I ONE-PORT
AMPLIFIER
^
(i—MA—i
SHORTED^
TM LINE'
I
ENGTH COUPLING
PLATES
O OUTPUT PORT
ONE-PORT
AMPLIFIER
R =50 tt'
\/4
/^
R = 50 fi'
ONE-PORT
AMPLIFIER
Figure 36
Hybrid-Coupled Amplifier
44
EDL-M397
4.2. 1 -- Continued.
(26)
41
('♦V^T)'
The requirement for stability is:
G
p
< l._ü = i/A, (27)
P p
l 4
G
If, for example, the one-port amplifier has a gain of 20 db (AT = 100),
the hybrid amplifier can, at most, tolerate an input and output VSWR
of 1.2. However, this stability requirement. Equation 27, only ensures
that the device will not oscillate. A large margin of stability is further
required to obtain the desired 20-db gain of the hybrid amplifier. If
condition C is not met, the hybrid amplifier will also have a reflected
gain, Gil, as defined by Equation 19. Assuming Equation 27 is ade-
quately met, the reflected gain is given approximately by
'11 K (28)
Since Gji should be much smaller than unity to achieve a good input
match, the output reflection coefficient must be exceptionally good
(p4 < 1/Arp). Assuming Aj = 100, as in the example above, p^ can be
no larger than 0. 01. This means that the output termination must have
a VSWR <1. 02.
45 -
EDL-M397
3.60
0.750"
^m&zzzzLTzzzzzzzzzzszzzzm i
DIODE
0.075'
CONNECTION
STRIP LINE CENTER CONDUCTOR
TO RF CONNECTOR
DIELECTRIC 2N2930 DIODE
SLABS
1 __ 0.250"
T
^
BYPASS CAPACITOR «o METAL SHORT
ONE-PORT AMPLIFIER
12
10
CD
O
FREQUENCY -- MEGACYCLES
Figure 37
Hybrid-Coupled Amplifier Employing an'
Electromagnetic Quarter-Wave Coupler
- 46 -
EDL-M397
0.146" DIODE
0.085"
1
i
♦ t
-*
OI.O"-* -
1.63"— ^
-
^~ DIODE
•CENTER STRIP LINE CIRCUIT
4 / BIAS ^
METAL BLOCK CIR SHORT
DIELECTRIC SLABS CLin
e
r = 2.6
Figure 38
Hybrid-Coupled Amplifier
Using a 3-branch Coupler
- 47
EDL-M397
48 -
EDL-M397
PORT I PORT 3
INPUT OUTPUT
II PORT 2
ONE PORT
1
AMPLIFIER
■CYLINDRICAL MAGNET
KWWWW^]
ALUMINUM STRIPLINE
BLOCKS CT"" CENTER
CONDUCTOR
CYLINDRICAL MAGNET
CYLINDRICAL FERRITES
Figure 39
Wye Circulator
49 -
EDL.M397
u
0
u
u
o
U
x.
u
00
u
ft
<;
■ ■'■
50 -
EDL-M397
Figure 41
Wide-banding Filter Networks
- 51 -
SS-2'
EDL-M397
4.2. 3 Continued.
2g ^AT
D D- 0
Bi/Ä 1 + 1 +
2TrC. G 2TTC
D-G0 D
(29)
where Gn and G. a:re values of G at resonance and at 3'-db points,
respectively., and g - GQ - Gi-, (Mid-band gain Aj is assumed to be
maximum. ) The radical factor is the improvement in gain-bandwidth
product, over the simple one-port amplifier.
- 52 -
EDL-M397
NOTE:
SOLID LINE AT CENTER OF CIRCULATOR
DOTTED LINE AT 3.8 CM FROM CENTER
FREQUENCr — GIGACYCLES
Figure 4Z
Impedance of Wye Ferrite Circulator
53
EDL-M397
SWEEP
X-Y RECORDER
OSCILLATOR
r-WV
X 10 DD
REFLECTOMETER
ADJUSTABLE X AA/V
ATTENUATOR . ' •. 10 OB
AMPLIFIER W/CIRCULATOR
Figure 43 .
Wide-banded S-band Amplifier
54 -
EDL-M397
4.2.4 Continued.
el.
■ , T
LGL
F =1 +■ ■ +. (3.0)
T G • ■ 2kT G
• s s s s
where
Ts and TT are the absolute temperatures of the'source and
the lead conductances,
I is the net diode junction current,
e is the electron charge, and
3, 28
k is Boltzmann's constant'
- 55 -
EDL-M397
Figure 44
Block Diagram of Stabilizing Network
56
EDJL-M397
u
0
v
Z
M
C
x>
■u
in
v
u 0
a fJ
DO
u
M
o
s
U
r-H
ft
■H
■M
57
EDL-M397
4.2.5 -- Continued.
This equation also holds for the hybrid-coupled amplifier with the
condition of perfect input match (p..5 0). The degradation is increased
when the input reflection coefficient is greater than zero.
Of these methods, 'only the last is of'real importance.. '.A cooling system
■for the amplifier is not compatible.'with its prime features, small
size .and low dc power requirements. ■ Secondly,, the required trans-
former for the reduction-of ratio G, /G means added circuit complexity,
greater frequency dependence, increased size, and, in'.addition, a'
reduction in transducer gain and gain Jjandwidth product. •
- 58
EDL-M397
V
.* '
i
'• • s HYBRID COUPLED
•
• (FIGSS)
*/
CD / ,IT. 1103; DIODES
r
AA
>#
i
-.* • "• • ' I ^~
V .■
i "■-. .
üJ ■
\ .*■
•
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OS . ■ ■ •
'•>w. W/CIRCULATOR
=3
a (FIG 37.AND 4Q)
it*
u.
' HY BRID. COUPl.ED-( FIG' 3.4) D4I68 DIODE
\xi 1
V) "11 2939 DIO )ES . 1
o 4
:i
-,*. ''•; ■ . ,
200 Mc Gc 2 Gc ' 3 Gc . 4 Gc
•FREQUENCY
Figure 46
Measured Noise Figures
59
EDL-M397
4. 3 Frequency Converters.
The noise characteristics of the mixer or the converter are not in-
herently degraded by the ratio of the signal and the intermediate fre- •
quency as is the .case of the parametric down converters. Further, it
. has been demonstrated that the tunnel-diode mixer can have a noise •
figure almost as good as that of the amplifier. 30
Mixer conversion gain and noise figure are critically dependent on the
negative conductance and the conversion conductance. In order to
evaluate these, it is assumed that the signal voltage is small and-the
local-oscillator voltage large. The diode conductance, -gft), can then
be considered as varying periodically at the oscillator frequency, as
shown in Figure 47. The time-varying conductance may be expressed
by a Fourier series of the form:
The average conductance over an oscillator cycle, gQ, and the con-
version conductance, gi, vary with bias and oscillation amplitude and
can have both positive and negative values. An exact determination
- 60 -
EDL-M397
•.V, V2 V3
t 1
dl."'
d^ S g
V2
"■' ■
■♦• V
(wt)
g(wt)
'0 - Y
I g(wt)'
g(wt)
\/V\ Vo = V2
:AAA: m
Vo = V3
wt wt wt
g0 > o Ä
g0 o g0 < o
Ä
go .§1 g0 << gj go.Ä 'Si
Figure 47
61
EDL-M397
4.3 -- Continued.
4r r g
i 2 l • •
G =■ (34)
[(l + g0rl)(l + g0r2),.g12:(r1r2]2
wh6re ri and r^ are the resistances seen by the diode at signal and
intermediate /requencies f/and f,, respectively. • Conversion gain is
possible when gQ is smaller.than |gi |. The values of RF input and IF
Output resistances are given by . . .
(35)
in " g0 (1 - ß/a)
and"'
(36)
out
gn (1 - Y/Q)
where g r RB r
i 2 l 1
a = and Y r
(37)
1 + g r 1 + eg^
0 1
0 2
The mixer has high gain only if r. and/or rout are negative, i. e. , when
bias, is adjusted so that gQ < Igj]. A small conversion gain is pos-
sible if both r. and r are positive,
in out
Mixer noise is contributed by r,, r and diode shot noise and is given
by '
g I0 PI + y iZky 1 T.
F = 1 +
2kT1g1 l Y (1 " QY),
Y)J Y(I - *y) i^2 T1
(38)
where I
k= 1
-r'
0
62
EDL-M397
4.3 -- Continued.
A circuit diagram of a mixer is shown "in Figure'48. The main differ- '
ence. between this circuit and the am'plifier.'circuiti Figure 29, is that
the RF bypass capa.citor.as smaller'arid''is resonated'with an ihductor
at the intermediate frequency. Th'ö'diode, capacitance resonates with
the inductance of the' tunable short-circuited transmission line. Figure 49
is a photo;of a mixer built at EDL... ' ••• . .
Several sel'f-excited down converters have been builfat EDL; the cir-
cuit is the same as that used for the mixer (Figure 48), but the diode
is biased far enough into the negative region for the diode to sustain .
oscillation. A cutaway view of a miniature S-band down converter is
presented in Figure 50. The converter uses a Sylvania D4168 diode
63
EDL-M397
RF SIGNAL O-
I tt
IF O 1
L rYYY>L
- T—IH
OSCILLATOR
BIAS 4- \AAAr—*W\A-^—*■
.• pv OSCILLATOR
LOAD
.. INPUT!'.
.;>•<'
1-2 Gc COUPLER"
;'.T.UNABLE SHORT
■i '.RF-' SIGNAL
► BIAS
Figure 48
L-band Mixer Circuit Schematic and
Component Layout
- 64
EDL-M397
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65 -
EDL-M397
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66
EDL-M397
4.3 Continued.
4. 4 Superregenerative Amplifier.
67
EDL-M397
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68
EDL-M397
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■
!
\ EDL-M397
DETECTOR
RF INPUT
■w- *
/77
TUNNEL DIODE
M—♦
QUENCH TANK
"CIRCUIT
RF TUNING W\A
BIAS
Cp -p^
/77
Figure 53
Superregenerative Amplifier
70 -
EDL-M397
5. TEMPERATURE CHARACTERISTICS.
6. SUMMARY.
71 -
EDL-M397
DURATION
2.0
90u/60 MIN
-90 \ 20 MIN
-90 10 MIN
in
ÜJ
ÜJ
a.
s:
< <
a:
a: a:
an
<
a:
UJ
0-
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VOLTAGE -- VOLTS
Figure 54
Temperature Characteristics of Sylvania D4115A
Tunnel Diode
72
EDL-M397
7^ REFERENCES.
'3 -
.
EDL-M397
7^ Continued.
-- Continued.
75 -
EDL-M397
7. Continued.
(ix + 76)
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