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FRACTIONAL-ORDER
DESIGN: DEVICES,
CIRCUITS AND SYSTEMS
FRACTIONAL-ORDER
DESIGN: DEVICES,
CIRCUITS, AND
SYSTEMS
Edited by
AHMED G. RADWAN
Engineering Mathematics and Physics Department
Cairo University, Giza, Egypt
School of Engineering and Applied Sciences
Nile University, Giza, Egypt
LOBNA A. SAID
Nanoelectronics Integrated Systems Center (NISC)
Nile University, Giza, Egypt
Series editor
ISBN: 978-0-323-90090-4
List of contributors xi
v
vi Contents
4.1. Introduction 89
4.2. Preliminaries 91
4.3. Combined synchronization of 2D fractional maps 93
4.4. Combined synchronization of 3D fractional maps 103
4.5. Concluding remarks and future works 111
Acknowledgments 111
References 115
Index 523
This page intentionally left blank
List of contributors
Avishek Adhikary
Indian Institute of Technology, Bhilai, Department of Electrical Engineering and
Computer Science, Raipur, India
Saeed Akbar
Department of Mathematics, University of Karachi, Karachi, Pakistan
Baris Baykant Alagoz
Inonu University, Department of Computer Engineering, Malatya, Turkey
Serkan Alagoz
Inonu University, Department of Physics, Malatya, Turkey
A.Q. Ansari
Department of Electrical Engineering, Jamia Millia Islamia, New Delhi, India
Alireza Bahramian
Department of Biomedical Engineering, Amirkabir University of Technology, Tehran, Iran
Iqbal M. Batiha
Department of Mathematics, Faculty of Science, The University of Jordan, Amman, Jordan
Panagiotis Bertsias
University of Patras, Department of Physics, Electronics Laboratory, Patras, Greece
Karabi Biswas
Department of Electrical Engineering, Indian Institute of Technology Kharagpur,
West Bengal, India
Hakim Denoun
Laboratory of Advanced Technologies of Electrical Engineering (LATAGE), Mouloud
Mammeri University Tizi-Ouzou, Tizi-Ouzou, Algeria
Ahmed S. Elwakil
University of Sharjah, Department of Electrical and Computer Engineering, Sharjah,
United Arab Emirates
Nile University, Nanoelectronics Integrated Systems Center (NISC), Giza, Egypt
University of Calgary, Department of Electrical and Computer Engineering, Calgary, AB,
Canada
Arezki Fekik
Electrical Engineering Department, Akli Mohand Oulhadj University-Bouira, Bouira,
Algeria
Laboratory of Advanced Technologies of Electrical Engineering (LATAGE), Mouloud
Mammeri University Tizi-Ouzou, Tizi-Ouzou, Algeria
Farnaz Ghassemi
Department of Biomedical Engineering, Amirkabir University of Technology, Tehran, Iran
xi
xii List of contributors
Arunangshu Ghosh
Department of Electrical Engineering, National Institute of Technology Patna, Patna,
Bihar, India
Maneesha Gupta
Department of Electronics and Communication Engineering, Netaji Subhas University of
Technology, New Delhi, India
Tooba Hameed
Department of Mathematics, University of Karachi, Karachi, Pakistan
M.S. Hashmi
Deptartment of Electronics and Communication Engineering, IIIT Delhi, New Delhi,
India
Hamza Houassine
Electrical Engineering Department, Akli Mohand Oulhadj University-Bouira, Bouira,
Algeria
Sajad Jafari
Department of Biomedical Engineering, Amirkabir University of Technology, Tehran, Iran
Health Technology Research Institute, Amirkabir University of Technology, Tehran, Iran
Stavroula Kapoulea
University of Patras, Department of Physics, Electronics Laboratory, Patras, Greece
Gagandeep Kaur
Department of Electrical Engineering, Jamia Millia Islamia, New Delhi, India
Ayub Khan
Jamia Millia Islamia, Department of Mathematics, New Delhi, Delhi, India
Amina-Aicha Khennaoui
Laboratory of Dynamical Systems and Control, University of Larbi Ben M’hidi,
Oum El Bouaghi, Algeria
Sanjeev Kumar
Department of Electrical Engineering, School of Engineering & Technology, Sandip
University, Madhubani, Bihar, India
Gul Faroz Ahmad Malik
Department of Electronics and Instrumentation Technology, University of Kashmir,
Srinagar, JK, India
Shalabh K. Mishra
Department of Electronics and Communication Engineering, ABES Engineering College,
Ghaziabad, Uttar Pradesh, India
Fahimeh Nazarimehr
Department of Biomedical Engineering, Amirkabir University of Technology, Tehran, Iran
Ali Nouri
Department of Biomedical Engineering, Amirkabir University of Technology, Tehran, Iran
Adel Ouannas
Department of Mathematics and Computer Science, University of Larbi Ben M’hidi,
Oum El Bouaghi, Algeria
Neeta Pandey
Department of Electronics and Communication Engineering, Delhi Technological
University, Delhi, India
Rajeshwari Pandey
Department of Electronics and Communication Engineering, Delhi Technological
University, Delhi, India
Viet-Thanh Pham
Nonlinear Systems and Applications, Faculty of Electrical and Electronics Engineering,
Ton Duc Thang University, Ho Chi Minh City, Viet Nam
Costas Psychalinos
University of Patras, Department of Physics, Electronics Laboratory, Patras, Greece
Muhammad Ali Qureshi
Department of Physics, University of Karachi, Karachi, Pakistan
Ahmed G. Radwan
Engineering Mathematics and Physics Department, Cairo University, Cairo, Egypt
Nanoelectronics Integrated Systems Center (NISC), Nile University, Giza, Egypt
Karthikeyan Rajagopal
Centre for Nonlinear Systems, Chennai Institute of Technology, Chennai, India
Lobna A. Said
Nanoelectronics Integrated Systems Center (NISC), Nile University, Giza, Egypt
xiv List of contributors
MOS realizations of
fractional-order elements
Stavroula Kapouleaa , Panagiotis Bertsiasa , Costas Psychalinosa , and
Ahmed S. Elwakilb,c,d
a University of Patras, Department of Physics, Electronics Laboratory, Patras, Greece
b University of Sharjah, Department of Electrical and Computer Engineering, Sharjah,
United Arab Emirates
c Nile University, Nanoelectronics Integrated Systems Center (NISC), Giza, Egypt
d University of Calgary, Department of Electrical and Computer Engineering, Calgary, AB, Canada
1.1. Introduction
Fractional-order (FO) elements are fundamental building blocks in
the application of fractional calculus on circuit-level realizations. Includ-
ing FO capacitors, known also in the literature as constant phase elements
(CPEs), and FO inductors (FIs), these elements are very useful tools in
numerous scientific fields, such as filtering, oscillator design, bio-medicine,
and control theory [31,33,34]. An integer-order (IO) system can be directly
converted into an FO system by just substituting the IO capacitors/induc-
tors with the corresponding FO counterparts. The parameters of the CPEs
and the FIs can offer a more precise control of the system characteristics,
due to the extra degree of freedom offered by the (fractional) order. This
originates from the fact that the identity of a CPE is determined by two
parameters, the order and the pseudocapacitance {α, Cα }. The characteristic
frequency-domain impedance of the element is described by
1
ZCPE (s) = , (1.1)
C α · sα
where the order α ∈ (0, 1), Cα has units of Farad/sec 1−α , and s is the Lapla-
cian operator.
The relationship between the pseudocapacitance in Farad/sec 1−α and the
conventional capacitance C in Farad, at a specific frequency ω, is given by
Cα
C= . (1.2)
ω1−α
Fractional-Order Design: Devices, Circuits, and Systems Copyright © 2022 Elsevier Inc. 1
https://doi.org/10.1016/B978-0-32-390090-4.00006-8 All rights reserved.
2 Stavroula Kapoulea et al.
Lβ
L= , (1.4)
ω1−β
with the order β ∈ (0, 1), the pseudoinductance Lβ in Henry/sec 1−β , and the
conventional inductance L in Henry. Therefore, the capacitance/inductance
of the elements is a frequency-dependent parameter.
The implementation of FO elements is of particular scientific inter-
est, but it is still an ongoing project [2,15,26]. As there is no commercial
production of such type of elements, the development of emulators that
efficiently approximate their behavior is a research field with practical util-
ity in a wide variety of applications [4,23–25,28,36,40]. The realization of
CPEs/FIs is performed using proper approximation methods (i.e., contin-
ued fraction expansion [CFE], partial fraction expansion [PFE], Oustaloup,
Matsuda, Carlson, Valsa, etc.) and appropriately configured structures (i.e.,
RC networks, multifeedback configurations, current-mode topologies,
etc.) [5,10,11,27,30,44]. The utilized elements, in order to construct the
emulator, can be exclusively passive elements (i.e., resistors, capacitors) or
a combination of passive and active elements (e.g., operational amplifiers
[Op-Amps], second-generation current conveyors [CCIIs], current feed-
back operational amplifiers [CFOAs], operational transconductance am-
plifiers [OTAs]), depending on the desired characteristics that must be
achieved [12,13,39,41–43].
The approximation methods, mentioned above, focus on the approxi-
mation of the operator (τ s)α,β around a center frequency ω0 , leading to a
rational nth-order function of the form
An sn + An−1 sn−1 + . . . + A1 s + A0
(τ s)α,β , (1.5)
sn + Bn−1 sn−1 + . . . + B1 s + B0
τα sn + Bn−1 sn−1 + . . . + B1 s + B0
ZCPE,approx (s) = · , (1.6b)
Cα An sn + An−1 sn−1 + . . . + A1 s + A0
Lβ
ZFI (s) = · (τ s)β , (1.6c)
τβ
Lβ An sn + An−1 sn−1 + . . . + A1 s + A0
ZFI ,approx (s) = · . (1.6d)
τβ sn + Bn−1 sn−1 + . . . + B1 s + B0
A simple and direct way to implement the impedance function in (1.6b) is
to use Foster or Cauer RC networks, constructed by conventional passive
resistors and capacitors [10,14]. The configurations of Type-I and Type-II
Foster networks are demonstrated in Fig. 1.1, while the corresponding
structures of Type-I and Type-II Cauer networks are demonstrated in
Fig. 1.2 [19,37].
For the Foster networks the PFE tool is applied on (1.6b), leading to
the form of (1.7a) for the impedance expression and to the form of (1.7b)
4 Stavroula Kapoulea et al.
n
ri
ZCPE,PFE (s) = k + , (1.7a)
i=1
s − pi
YCPE,PFE (s) k ri ri · s
n n
= + ⇒ YF −II (s) = k + . (1.7b)
s s i=1 s − pi i=1
s − pi
The coefficients ri and pi (i = 1, ...n) are the residues and poles of (1.6b) and
k is a constant term.
Considering these functions and the configurations in Fig. 1.1, the ex-
pressions for the impedance of Type-I Foster and the admittance of Type-II
Foster networks are given by (1.8a) and (1.8b), respectively:
n 1
Ci
ZF −I (s) = R0 + , (1.8a)
i=1
s + Ri1Ci
1 Ri · s
n 1
YF −II (s) = + . (1.8b)
R0 i=1 s + Ri1Ci
In the case of Cauer networks, the CFE tool is used to decompose the
approximated impedance function in (1.6b). One option is to arrange the
powers of the variable s in the numerator and the denominator of (1.6b)
starting from the highest to the lowest power. The derived, decomposed
impedance function in this case has the following form:
1
ZCPE,CFE (s) = q0 + (1.9)
1
q1 s +
1
q2 +
1
q3 s +
.................
1
,
1
q2n−1 s +
q2n
where qi (i = 0, ...2n) are the coefficients of the CFE. Another form can be
obtained by rewriting the polynomials in (1.6b) in the form of the lowest
to the highest power of the variable s and, then, divide the impedance
MOS realizations of fractional-order elements 5
ZCPE,CFE (s) 1
=
s 1
q0 s +
1
q1 +
1
q2 s +
.................
1
q2n−1 + q2n s
⇓ (1.10)
1
ZCPE,CFE (s) =
1
q0 +
q1 1
s +
1
q2 +
.................
1
q2n−1 .
s + q2n
Considering the form in (1.9) for the case of the Type-I Cauer network and
the form in (1.10) for the case of the Type-II Cauer network, the derived
expressions for the impedance of the configurations in Fig. 1.2 are given
by
1
ZC−I (s) = R0 + (1.11)
1
C1 s +
1
R2 +
1
C3 s +
.................
1
,
1
C2n−1 s +
R2n
6 Stavroula Kapoulea et al.
1
ZC−II (s) = (1.12)
1
1
R0 +
1
1
C1 s +
1
1
R2 +
.................
1
.
1
C2n−1 s + R2n
The design equations for calculating the values of resistors and capacitors
for both types of each network are summarized in Table 1.1.
Table 1.1 Design equations for calculating resistor and capacitor values of the Foster
and Cauer networks in Fig. 1.1 and Fig. 1.2.
Foster Cauer
Element Type I Type II Element Type I Type II
R0 k 1 R0 q0 1
k q0
Ri (i = 1, 2, ...n) ri 1 Ri (i = 0, 2, ...2n) qi 1
pi ri qi
Ci (i = 1, 2, ...n) 1 ri Cj j = 1, 3, ...2n − 1 qj 1
ri pi qj
the OTA as demonstrated in Fig. 1.3, this configuration can directly re-
place the passive resistors of the networks in Fig. 1.1 and Fig. 1.2 and form
electronically controlled OTA-C networks.
Fig. 1.3 are given in Table 1.2, with the power supply voltages being equal
to VDD = −VSS = 0.75 V . Considering the case of a CPE with {α, Cα } =
{0.5, 300 pF /sec 0.5 } approximated applying the second-order CFE tool on a
Type-II Foster network around f0 = 100 Hz, the values of resistances, along
with the corresponding values of bias currents, and also the capacitances are
summarized in Table 1.3. The layout design of the circuit is demonstrated
in Fig. 1.4, with the active core of the OTA-based resistors being framed
by the red rectangle (mid gray in print version) and the passive capacitors
being represented by the yellow squares (light gray in print version).
Figure 1.4 Layout design of the Type-II Foster impedance emulator (dimensions:
252.55 μm × 102.6 μm). The area included within the red frame (mid gray in print ver-
sion) is occupied by OTAs configured as resistors, while the remaining area corresponds
to the capacitors [18].
Figure 1.5 Postlayout simulation results of the impedance magnitude and phase fre-
quency responses in the case of CPE {α, Cα } = {0.5, 300 pF /sec0.5 } for x = 0.1, 1, 10.
[6,9,38]. The transfer function that describes the behavior of this element
is given by
HFO (s) = (τ s)q , (1.16)
with τ being a time constant related to the unity-gain frequency as τ =
1/ω0 and q ∈ (−1, 1) being the order of the FO integrator/differentiator.
When q spans the range of (−1, 0), the function in (1.16) represents an FO
integrator, while in the case that the value of q is within the range of (0, 1),
it corresponds to an FO differentiator.
The cascade connection of this FO stage with a voltage-to-current
(V/I) converter, as demonstrated in the functional block diagram (FBD)
of Fig. 1.6, forms an emulator with controllable type (CPE or FI), order
(α or β ), and center frequency (ω0 ).
Cα = gm,V /I · τ α , (1.18a)
τβ
Lβ = . (1.18b)
gm,V /I
The main task in the realization of the emulator in Fig. 1.6 is to implement
the FO stage using a common structure capable of realizing both integrators
and differentiators. Starting from the approximation of the transfer function
in (1.16) and applying one of the approximation tools mentioned in the in-
troduction, the obtained nth-order approximated function has the form
of (1.5). The construction of this function can be performed using mul-
tifeedback structures (i.e., follow-the-leader-feedback [FLF] and inverse-
follow-the-leader-feedback [IFLF]) presented in FBD form in Fig. 1.7 and
Fig. 1.8, respectively.
The expression that describes the FLF and IFLF diagrams is given by
Kn s n + K n −1
τ1
sn−1 + .. + K0
τ1 ·τ2 ...τn
H(I )FLF (s) = , (1.19)
sn + 1
τ1
sn−1 + .. + 1
τ1 ·τ2 ...τn
MOS realizations of fractional-order elements 13
with τi (i = 1, 2, ...n) being the time constants and Kj (j = 0, 1, ...n) the scal-
ing factors. The calculation of these parameters is performed through the
equation between the corresponding coefficients of the functions in (1.5)
and (1.19), leading to the following design equations: τi = Bn−(i−1) /Bn−i and
Kj = Aj /Bj , with Bn = 1.
The multifeedback structure is an efficient option in the case that
the utilized active elements have differential input. Such elements are the
single-output OTAs in Fig. 1.9, which can be implemented using the
MOS transistor-based circuit demonstrated in the same figure. Consider-
ing operation in the subthreshold region and using (1.15), the realized time
constants are calculated as
Ci 9nVT Ci
τi = = (i = 1, 2, ...n) , (1.20)
gmi 5IBi
while the scaling factors Kj (j = 0, 1, ...n) are formed through the appro-
priate selection of the transconductances gmj , which are controlled by the
bias currents IBj as described by (1.15). The V/I converter of the emula-
tor can be implemented using the multiple-output OTA in Fig. 1.3 with
transconductance gm,V /I controlled by the corresponding bias current IB,V /I
as described in (1.15).
Figure 1.9 Circuit implementation and symbol representation of the single-output OTA
utilized to construct the FBD of the FLF and IFLF structures in Fig. 1.7 and Fig. 1.8.
K1 K2 Kn
HPFE (s) = K0 + + + ... + . (1.21)
τ1 s + 1 τ2 s + 1 τn s + 1
The design
equations here are the following: K0 = An , τi = 1/ pi , and
Ki = ri / pi , with ri , pi being the residues and poles of the function in (1.5).
Figure 1.10 Functional block diagram of the partial fraction expansion-based struc-
ture.
nVT C
τ= . (1.22)
IB
The realization of the V/I converter can be performed using the cir-
cuit in Fig. 1.12, with the realized transconductance calculated as gm,V /I =
IB,V /I /(nVT ).
MOS realizations of fractional-order elements 15
Figure 1.11 Current-mirror and log-domain technique-based MOS realizations for the
implementation of the first-order transfer functions (lossy integrators) of the FBD in
Fig. 1.10.
The main derivations from all the above are the following:
1. The type (CPE or FI) and the order (α or β ) of the emulator are de-
termined by the type and the order (differentiator q = α or integrator
q = −β ) of the FO stage.
2. The center frequency ω0 = 2π f0 is controlled by the FO stage’s bias
currents.
3. The pseudocapacitance/inductance (Cα or Lβ ) of the emulator can be
controlled through the transconductance gm,V /I of the V/I converter
stage.
As a result, the type, the order, the pseudocapacitance/inductance, and the
center frequency are electronically controlled through appropriate tuning
of the bias currents of the system.
16 Stavroula Kapoulea et al.
Figure 1.13 Spread of time constants as a function of the order q for various orders of
CFE and Oustaloup approximation methods [17].
Figure 1.14 Spread of scaling factors as a function of the order q for various orders of
CFE and Oustaloup approximation methods [17].
in Fig. 1.17. Implementing the OTAs of the FO stage and also of the IO
stages using the circuit in Fig. 1.9 and the V/I converter using the circuit
in Fig. 1.3 and considering the equation in (1.15), the complete emulator
is controlled through the bias currents of the OTAs.
18 Stavroula Kapoulea et al.
Figure 1.15 FBD for implementing an FO integrator/differentiator using the spread re-
duction concept.
Table 1.4 Realized cases using the concept in Fig. 1.15 for re-
ducing the spread of time constants and scaling factors.
FO stage IO stage Result
differentiator integrator integrator
q ∈ (0, 0.5) r = −1 q + r ∈ (−1, −0.5)
integrator differentiator differentiator
q ∈ (−0.5, 0) r = +1 q + r ∈ (0.5, 1)
Figure 1.16 FBD of the enhanced CPE/FI emulator using the proposed spread reduc-
tion technique.
K · Imain , and K0 · I0main [21]. As a result, control of the input current Imain
automatically means control of the whole emulator.
Considering a second-order CFE approximation, in order to explain
the procedure, the required currents of the FO integrator/differentiator are
9nC1 VT 8 − 2q2
I01 = K1 · I01 = · 2 , (1.24a)
5 q − 3q + 2
9nC2 VT q2 + 3q + 2
I02 = · , (1.24b)
5 8 − 2q2
9nC2 VT q2 − 3q + 2
K0 I02 = · , (1.24c)
5 8 − 2q2
20 Stavroula Kapoulea et al.
q2 + 3q + 2
K2 I03 = · I03 . (1.24d)
q2 − 3q + 2
Setting I02 as the main current Imain and I03 equal to K0 I02 , the other cur-
rents are formed as follows:
2
C1 8 − 2q2
I01 = K1 I01 = · 2 · Imain ≡ K · Imain , (1.25a)
C2 q − 3q + 2 · q2 + 3q + 2
q2 − 3q + 2
I03 = · Imain = K0 Imain , (1.25b)
8 − 2q2
The input terminal of the emulator is the Imain current, so the two scaled
versions K · Imain and K0 Imain will be produced by an approximation block,
in order to feed the main CPE/FI core with the required currents. Per-
forming a second-order polynomial curve-fitting approximation using the
MATLAB® inbuilt function polyfit, the scaled currents are described as
n n−1
Imain Imain
K · Imain ∼
= mn,1 · + mn−1, 1 · + .... + m1,1 · Imain + m0,1 · Iref , (1.26)
Irefn−1 Irefn−2
n n−1
Imain Imain
K0 · Imain ∼
= mn,2 · + mn−1,2 · + ... + m1,2 · Imain + m0,2 · Iref , (1.27)
Irefn−1 Irefn−2
Figure 1.19 MOS transistor-based implementations of the scaling and squaring opera-
tions.
AMS 0.35 µm process. Indicative aspect ratios for the transistors of the cir-
cuits in Fig. 1.19, for implementing the approximation block in Fig. 1.18,
are presented in Table 1.5 [21].
Table 1.5 Aspect ratios of the MOS transistors of the current squarer and scaling circuits
shown in Fig. 1.19.
Current squarer Current scaling Current scaling
Transistor (W/L) Transistor (W/L) Transistor (W/L)
(μm/μm) (μm/μm) (μm/μm)
Mp1–Mp3 80/15 Mp1 120/1.2 Mp1 120/1
Mp4 m21 ·(80/15) Mp2 m01 ·(120/1.2) Mp2 m11 ·(120/1)
Mp5 m22 ·(80/15) Mp3 m02 ·(120/1.2) Mn1 & Mn2 0.5/15
Mn3 m12 ·(120/1)
Table 1.6 Aspect ratios of the MOS transistors of the OTA in Fig. 1.9 that implements
the FO and IO stages and of the OTA in Fig. 1.3 that implements the V/I converter.
Transistors OTA in Fig. 1.9 OTA in Fig. 1.3
FO Int/Diff IO Diff IO Int V/I converter
(W/L) (μm/μm)
Mb1–Mb3 0.5/10 1/12 25/5 0.5/10
Mb4–Mb7 – – – 1/2
Mn1 & Mn4 10/2 5/5 5/5 10/1
Mn2 & Mn3 2/2 1/5 1/5 2/1
Mp1–Mp3 10/15 0.9/18 0.5/5 1/2.5
Mp4–Mp6 – – – 1/2.5
The currents of the IO stages and the V/I converter are internally pro-
duced using Iref as reference current and the scaling stages in Fig. 1.19,
appropriately configured so that the obtained current values are equal to
MOS realizations of fractional-order elements 23
Figure 1.20 Layout design of the one-terminal controlled CPE/FI emulator (dimen-
sions: 403 μm × 445.7 μm). The blue rectangle frames (dark gray in print version) the
approximation block and the red rectangle frames (mid gray in print version) the CPE/FI
core, while the remaining area is occupied by the capacitors [21].
IB,diff = 353.2 pA, IB,int = 176.6 pA, and IB,V /I = 500 pA. The values of the
main current, required to emulate a CPE of order α ∈ (0, 1), along with the
obtained values of pseudocapacitance are presented in Table 1.7 [21], while
the corresponding values in the case of an FI are also given in the same
table. An important point here is that the concept of the spread reduction,
described in the previous subsection, is utilized for the implementation of
the higher orders q > 0.5.
The efficient operation of the system, in terms of frequency domain, is
evaluated through the impedance magnitude and phase responses that are
demonstrated in Fig. 1.21 for the CPE case and in Fig. 1.22 for the FI
case within a frequency range f = [10, 1 k] Hz. The solid lines correspond
to the postlayout simulation results, while the dashed lines represent the
theoretically predicted plots.
24 Stavroula Kapoulea et al.
Table 1.7 Values of the main bias current for emulating CPE and FI of various orders
using the emulator in Fig. 1.20.
CPE FI
α Cα Imain Iref β Lβ Imain Iref
0.1 4.67 nF /sec 0.9 510.7 pA 0.1 59 MH /sec 0.9 378.1 pA
0.2 2.45 nF /sec 0.8 588.1 pA 0.2 31 MH /sec 0.8 320.8 pA
0.3 1.29 nF /sec 0.7 674.6 pA 0.3 16 MH /sec 0.7 268.5 pA
0.4 676 pF /sec 0.6 771.9 pA 0.4 8.5 MH /sec 0.6 220.5 pA
0.5 355 pF /sec 0.5 882.2 pA 1.76 nA 0.5 4.5 MH /sec 0.5 176.4 pA 1.76 nA
0.6 186 pF /sec 0.4 220.5 pA 0.6 2.4 MH /sec 0.4 771.9 pA
0.7 97.8 pF /sec 0.3 268.5 pA 0.7 1.2 MH /sec 0.3 674.6 pA
0.8 51.4 pF /sec 0.2 320.8 pA 0.8 648 kH /sec 0.2 588.1 pA
0.9 27 pF /sec 0.1 378.1 pA 0.9 340 kH /sec 0.1 510.7 pA
Figure 1.21 Impedance magnitude and phase frequency responses of the CPE emula-
tor in Fig. 1.20.
Figure 1.22 Impedance magnitude and phase frequency responses of the FI emulator
in Fig. 1.20.
Figure 1.23 Input voltage and output current waveforms in the case that the emulator
realizes a CPE of order α = 0.3. The sinusoidal input signal has amplitude V0 = 10 mV
and center frequency f0 = 100 Hz.
Table 1.8 Realized cases using the concept of the order range extension.
FO stage IO stage Result Emulator type
differentiator differentiator differentiator CPE
q ∈ (0, 1) r = +1 q + r ∈ (0, 2) α ∈ (0, 2)
integrator integrator integrator FI
q ∈ (−1, 0) r = −1 q + r ∈ (−2, 0) β ∈ (0, 2)
Table 1.9 Values of bias currents for emulating CPE of various orders within the range
α ∈ (0, 2) using the emulator in Fig. 1.17.
α Cα IB2 IB1 IB0 K0 IB2 K1 IB1 K2 IB0
0.2 2.45 nF /sec 0.8 470.5 pA 1.94 nA 5 nA 256.6 pA 1.94 nA 9.2 nA
0.4 676.6 pF /sec 0.6 617.5 pA 2.82 nA 1 nA 176.4 pA 2.82 nA 3.5 nA
0.6 186.5 pF /sec 0.4 806.5 pA 4.59 nA 0.5 nA 108.6 pA 4.59 nA 3.7 nA
0.8 51.42 pF /sec 0.2 1.06 nA 9.88 nA 0.5 nA 50.41 pA 9.88 nA 10.5 nA
1.2 3.91 pF /sec −0.2 1.06 nA 9.88 nA 0.5 nA 50.41 pA 9.88 nA 10.5 nA
1.4 1.08 pF /sec −0.4 806.5 pA 4.59 nA 0.5 nA 108.6 pA 4.59 nA 3.7 nA
1.6 296.9 fF /sec −0.6 617.5 pA 2.82 nA 1 nA 176.4 pA 2.82 nA 3.5 nA
1.8 81.86 fF /sec −0.8 470.5 pA 1.94 nA 5 nA 256.6 pA 1.94 nA 9.2 nA
The simulation verification in this case has been performed using the
Cadence IC design suite and the Design Kit AMS 0.35 µm process. The
OTA-C structure in Fig. 1.17 is utilized and is implemented using the
OTA circuits of Fig. 1.3 and Fig. 1.9 with power supply voltages equal to
VDD = −VSS = 0.75V . A second-order CFE approximation is applied to
the FO stage around a center frequency f0 = 100 Hz with the derived val-
ues for the passive capacitors being equal to C1 = 10 pF and C2 = 40 pF.
The required bias currents, in order to realize different orders within the
range α, β ∈ (0, 2), are tabulated in Table 1.9 for CPE emulation and in
Table 1.10 for FI emulation [22]. The corresponding realized pseudoca-
pacitances/inductances are included in the same tables. The parameters of
the IO differentiator are Cdiff = 20 pF, IB,diff = 706.4 pA and those of the
IO integrator are Cint = 5 pF, IB,int = 176.6 pA, while the bias current of
the V/I converter is set equal to IB,V /I = 500 pA.
According to these specifications the emulator has been designed at the
layout level, as shown in Fig. 1.24, containing the FO stage (red frame;
mid gray in print version), the IO differentiator (green frame; light gray in
print version), the IO integrator (yellow frame; white in print version), the
V/I converter (blue frame; dark gray in print version), and also the pas-
sive capacitors (yellow squares; light gray in print version). The impedance
MOS realizations of fractional-order elements 27
Table 1.10 Values of bias currents for emulating FI of various orders within the range
β ∈ (0, 2) using the emulator in Fig. 1.17.
β Lβ IB2 IB1 IB0 K0 IB2 K1 IB1 K2 IB0
0.2 1.55 MH /sec 0.8 256.6 pA 1.06 nA 10 nA 470.5 pA 1.06 nA 5.4 nA
0.4 426.8 kH /sec 0.6 176.4 pA 806.5 pA 1 nA 617.5 pA 806.5 pA 1.4 nA
0.6 117.7 kH /sec 0.4 108.6 pA 617.5 pA 10 nA 806.5 pA 617.5 pA 1.3 nA
0.8 32.44 kH /sec 0.2 50.41 pA 470.5 pA 500 nA 1.06 nA 470.5 pA 23.8 nA
1.2 2.47 kH /sec −0.2 50.41 pA 470.5 pA 500 nA 1.06 nA 470.5 pA 23.8 nA
1.4 679.9 H /sec −0.4 108.6 pA 617.5 pA 1 nA 806.5 pA 617.5 pA 1.3 nA
1.6 187.2 H /sec −0.6 176.4 pA 806.5 pA 10 nA 617.5 pA 806.5 pA 1.4 nA
1.8 51.67 H /sec −0.8 256.6 pA 1.06 nA 5 nA 470.5 pA 1.06 nA 5.4 nA
Figure 1.24 Layout design of the CPE/FI emulator of order in the range α, β ∈ (0, 2) (di-
mensions: 356.6 μm × 358.4 μm). The red rectangle frames (mid gray in print version)
the FO stage, the green rectangle frames (light gray in print version) the IO differentia-
tor, the yellow rectangle frames (white in print version) the IO integrator, and the blue
rectangle frames (dark gray in print version) the V/I converter, while the remaining space
is occupied by capacitors [22].
magnitude and phase frequency responses for the case of Table 1.9 within a
frequency range f = [10, 1 k] Hz are presented in Fig. 1.25, while the cor-
responding frequency responses for the case of Table 1.10 are presented in
Fig. 1.26.
28 Stavroula Kapoulea et al.
Figure 1.25 Impedance magnitude and phase frequency responses of the CPE emula-
tor in Fig. 1.24.
Figure 1.26 Impedance magnitude and phase frequency responses of the FI emulator
in Fig. 1.24.
Figure 1.27 Impedance magnitude frequency responses for various values of realized
pseudocapacitance/inductance of the CPE/FI emulator in Fig. 1.24. The control of this
parameter is performed through the bias current of the V/I converter.
the order. As a derivation from all these, the MOS transistor-based con-
figurations, discussed in this chapter, are easily modified according to the
desired specifications and, thus, are able to fulfill the requirements of a wide
range of applications. Further improvement of the presented implementa-
tions aims at less complex configurations with extended frequency range of
efficient operation, so as to achieve emulators with maximum benefits at
the lowest expense.
Nowadays research efforts on this subject focus on the development
of emulators that approximate the impedance of a whole model and not
only the impedance of each FO element individually. For this purpose,
alternative approximation tools, like the Padé approximation and curve-
fitting-based techniques, are required, as conventional methods are able to
approach only the Laplacian operator and not a whole function. Exploiting
such tools, various biological tissue models, described by complex electrical
models, like the well-known Cole–Cole model, can be realized by one
emulator, independently of the passive and FO elements it contains [20].
This concept is also very useful in the realization of models where not
only the Laplacian operator, but a whole function is raised to the fractional
order, as in the case of the Cole–Davidson and Havriliak–Negami mod-
els [19]. The obtained, approximated impedance functions have the same
form as in the case of the typical approximation methods (i.e., integer ra-
tional transfer functions), so their realization can be performed following
the concepts presented in this chapter.
Acknowledgment
This research is cofinanced by Greece and the European Union (European Social
Fund-ESF) through the Operational Programme “Human Resources Development,
Education and Lifelong Learning” in the context of the project “Strengthening
Human Resources Research Potential via Doctorate Research-2nd Cycle” (MIS-
5000432), implemented by the State Scholarships Foundation (IKY).
This article is based upon work from COST Action CA15225, a network sup-
ported by COST (European Cooperation in Science and Technology).
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buckets. And, by gosh, these square-heads went on strike
and the kindly French let ’em get away with it. If any
prisoners went on strike in Germany it’s a cinch they’d be
shot full of holes. They don’t treat ’em rough enough in
France.
After looking over several of these Corsair diaries, Commander
Kittinger had this shrewd and good-humored comment to offer:
The impressions which these youngsters jotted down
were amusing and often inaccurate, but they caught the
spirit of the service and the day’s work. When one of them
felt aggrieved because he was “bawled out,” he never
stopped to take an inventory of his professional
qualifications and the duties thrust upon him as well as
upon other untrained and unseasoned lads. Nor did he
always realize that he was allowed to perform functions
whereby he had the safety of a hundred and twenty-five
lives and a million dollars worth of irreplaceable property
between his two hands. There was no time to learn by
experience and every “bawling out” was, I hope, driving an
important fact home. Where else could one of these boys
have learned such valuable lessons and be on a pay-roll
at the same time? Of course they could not understand
such methods, but the system soon separated the sheep
from the goats—the latter remaining at the business end
of a deck swab. Many times the skipper was not as angry
as he appeared. The first lesson was to say “Aye, Aye,
Sir,” when told something important instead of trying to
explain. When a young man explains, he is not listening to
the order, but thinking up a reply.
To the Corsair’s company the most interesting happenings during
the long period of convoy duty were the changes and promotions
which shifted many of the family to other ships and stations and
brought new faces aboard. Commander Kittinger had been
advanced a grade on the Regular Navy list since joining the Corsair
and was in line for transfer to a larger ship. He was given the stately
armed transport Princess Matoika, formerly the Princess Alice of the
North German Lloyd, and thereafter carried many thousand
American troops in safety to France. In this ship the roster of officers
was more imposing than in the yacht which served so faithfully, for
Commander Kittinger now gave orders to two lieutenant
commanders, eleven lieutenants, and twenty ensigns. Toward the
Corsair he felt affection and loyalty and was glad that his war record
had included a year with her, crossing with the first American troops
and battering about in the Bay of Biscay. Drilled in the exacting
school of the regular service, he had only praise for the spirit,
intelligence, and devotion of the Reserves, officers and men, who
had fitted themselves to circumstances and played the game to the
hilt.
After the war Commander Kittinger was sent to the Fore River
Ship Building Company as Naval Inspector of Ordnance. While there
he received the following letter:
July 23, 1919
Chorus:
7. When they’re coming too strong, and you find you’re in wrong,
In trouble at sea or on land,
There’s just one man to see and his name’s F. T. E.,[6]
To clear out the gear box of sand.
FOOTNOTES:
[4] A Year in the Navy. Houghton Mifflin Co.
[5] H. B. Wilson.
[6] Commander Frank T. Evans, U.S.N.
CHAPTER X
THE CORSAIR STANDS BY