BSC014N06NS

MOSFET
OptiMOSTMPower-Transistor,60V PG-TDSON-8

8 5
Features 7
6
6
7
5
•OptimizedforhighperformanceSMPS,e.g.sync.rec. 8

•100%avalanchetested
•Superiorthermalresistance Pin 1
•N-channel 2 4

•QualifiedaccordingtoJEDEC1)fortargetapplications 3
4
3
2
•Pb-freeleadplating;RoHScompliant 1

•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilityduetoenlargedsourceinterconnection

Table1KeyPerformanceParameters Drain
Pin 5-8
Parameter Value Unit
VDS 60 V Gate *1

Pin 4
RDS(on),max 1.45 mΩ
Source
ID 240 A *1: Internal body diode Pin 1-3

QOSS 100 nC
QG(0V..10V) 89 nC

Type/OrderingCode Package Marking RelatedLinks

BSC014N06NS PG-TDSON-8 FL 014N06NS -

1)
J-STD20 and JESD22
Final Data Sheet 1 Rev.2.5,2022-08-09
 OptiMOSTMPower-Transistor,60V
BSC014N06NS

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Final Data Sheet 2 Rev.2.5,2022-08-09

 OptiMOSTMPower-Transistor,60V
BSC014N06NS

1Maximumratings
atTj=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 240 VGS=10V,TC=25°C
Continuous drain current1) ID - - 152 A VGS=10V,TC=100°C
- - 30 VGS=10V,TC=25°C,RthJA=50K/W2)
Pulsed drain current3) ID,pulse - - 960 A TC=25°C
Avalanche energy, single pulse4) EAS - - 580 mJ ID=50A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
- - 156 TC=25°C
Power dissipation Ptot W
- - 2.5 TA=25°C,RthJA=50K/W2)
IEC climatic category;
Operating and storage temperature Tj,Tstg -55 - 150 °C
DIN IEC 68-1: 55/150/56

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case,
RthJC - 0.5 0.8 K/W -
bottom
Thermal resistance, junction - case,
RthJC - - 20 K/W -
top
Device on PCB,
RthJA - - 50 K/W -
6 cm2 cooling area2)

1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
Final Data Sheet 3 Rev.2.5,2022-08-09
 OptiMOSTMPower-Transistor,60V
BSC014N06NS

3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 60 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 2.1 2.8 3.3 V VDS=VGS,ID=120µA
- 0.5 1 VDS=60V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 100 VDS=60V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
- 1.2 1.45 VGS=10V,ID=50A
Drain-source on-state resistance RDS(on) mΩ
- 1.6 2.2 VGS=6V,ID=12.5A
Gate resistance1) RG - 2 3 Ω -
Transconductance gfs 75 150 - S |VDS|>2|ID|RDS(on)max,ID=50A

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 6500 8125 pF VGS=0V,VDS=30V,f=1MHz
Output capacitance1) Coss - 1500 1875 pF VGS=0V,VDS=30V,f=1MHz
Reverse transfer capacitance 1)
Crss - 59 118 pF VGS=0V,VDS=30V,f=1MHz
VDD=30V,VGS=10V,ID=30A,
Turn-on delay time td(on) - 23 - ns
RG,ext,ext=2Ω
VDD=30V,VGS=10V,ID=30A,
Rise time tr - 10 - ns
RG,ext,ext=2Ω
VDD=30V,VGS=10V,ID=30A,
Turn-off delay time td(off) - 43 - ns
RG,ext,ext=2Ω
VDD=30V,VGS=10V,ID=30A,
Fall time tf - 11 - ns
RG,ext,ext=2Ω

Table6Gatechargecharacteristics2)
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 28 - nC VDD=30V,ID=50A,VGS=0to10V
Gate charge at threshold Qg(th) - 18 - nC VDD=30V,ID=50A,VGS=0to10V
Gate to drain charge 1)
Qgd - 16 21 nC VDD=30V,ID=50A,VGS=0to10V
Switching charge Qsw - 26 - nC VDD=30V,ID=50A,VGS=0to10V
Gate charge total 1)
Qg - 89 104 nC VDD=30V,ID=50A,VGS=0to10V
Gate plateau voltage Vplateau - 4.3 - V VDD=30V,ID=50A,VGS=0to10V
Gate charge total, sync. FET Qg(sync) - 78 - nC VDS=0.1V,VGS=0to10V
Output charge 1)
Qoss - 100 125 nC VDD=30V,VGS=0V

1)
Defined by design. Not subject to production test.
2)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet 4 Rev.2.5,2022-08-09
 OptiMOSTMPower-Transistor,60V
BSC014N06NS

Table7Reversediode
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode continuous forward current IS - - 156 A TC=25°C
Diode pulse current IS,pulse - - 960 A TC=25°C
Diode forward voltage VSD - 0.8 1.2 V VGS=0V,IF=50A,Tj=25°C
Reverse recovery time 1)
trr - 52 83 ns VR=30V,IF=50A,diF/dt=100A/µs
Reverse recovery charge Qrr - 139 - nC VR=30V,IF=50A,diF/dt=100A/µs

1)
Defined by design. Not subject to production test.
Final Data Sheet 5 Rev.2.5,2022-08-09
 OptiMOSTMPower-Transistor,60V
BSC014N06NS

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Draincurrent
180 250

160

200
140

120

150
100
Ptot[W]

ID[A]
80
100

60

40
50

20

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TC[°C] TC[°C]
Ptot=f(TC) ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 100

1 µs 0.5
10 µs
2
10
100 µs 0.2
-1
1 ms 10
0.1
1
10 ms
10
ZthJC[K/W]

DC 0.05
ID[A]

0.02
0
10 0.01
10-2
single pulse

10-1

10-2 10-3
10-1 100 101 102 10-6 10-5 10-4 10-3 10-2 10-1 100
VDS[V] tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp ZthJC=f(tp);parameter:D=tp/T

Final Data Sheet 6 Rev.2.5,2022-08-09

 OptiMOSTMPower-Transistor,60V
BSC014N06NS

Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance
1000 4.0
5V
10 V 5.5 V
3.5
7V
800
3.0

2.5
600

RDS(on)[mΩ]
ID[A]

6V
2.0
6V
400
1.5 7V
5.5 V
10 V
1.0
200
5V
0.5

0 0.0
0 1 2 3 4 5 0 100 200 300 400 500
VDS[V] ID[A]
ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance
1000 250

800 200

25 °C
600 150
150 °C
gfs[S]
ID[A]

400 100

200 50

0 0
0 2 4 6 8 10 0 20 40 60 80 100
VGS[V] ID[A]
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj gfs=f(ID);Tj=25°C

Final Data Sheet 7 Rev.2.5,2022-08-09

 OptiMOSTMPower-Transistor,60V
BSC014N06NS

Diagram9:Drain-sourceonresistance Diagram10:Typ.gatethresholdvoltage
2.8 3.5

2.4 3.0
1200 µA

2.0 2.5
120 µA

1.6 2.0
RDS(on)[mΩ]

max

VGS(th)[V]
1.2 typ 1.5

0.8 1.0

0.4 0.5

0.0 0.0
-75 -50 -25 0 25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175
Tj[°C] Tj[°C]
RDS(on)=f(Tj),ID=50A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID

Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode
4
10 103
25 °C
Ciss 25 °C, max
150 °C
150 °C, max

103 Coss 102

C[pF]

IF[A]

102 101

Crss

101 100
0 20 40 60 0.0 0.5 1.0 1.5
VDS[V] VSD[V]
C=f(VDS);VGS=0V;f=1MHz IF=f(VSD);parameter:Tj

Final Data Sheet 8 Rev.2.5,2022-08-09

 OptiMOSTMPower-Transistor,60V
BSC014N06NS

Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge
2
10 12

30 V
10
25 °C 12 V 48 V

100 °C
8

125 °C

VGS[V]
IAV[A]

101 6

100 0
100 101 102 103 0 20 40 60 80 100
tAV[µs] Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD

Diagram15:Min.drain-sourcebreakdownvoltage Diagram Gate charge waveforms

65

64

63

62
VBR(DSS)[V]

61

60

59

58

57
-75 -50 -25 0 25 50 75 100 125 150 175
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA

Final Data Sheet 9 Rev.2.5,2022-08-09

 OptiMOSTMPower-Transistor,60V
BSC014N06NS

5PackageOutlines

PACKAGE - GROUP
NUMBER: PG-TDSON-8-U04
MILLIMETERS
DIMENSIONS
MIN. MAX.
A 0.90 1.20
A1 0 0.05
b 0.26 0.54
c 0.15 0.35
D 4.80 5.35
D1 3.70 4.40
D2 2.94 3.25
D3 5.05 5.38
E 5.70 6.10
E1 3.43 3.76
E2 0.69 0.89
e 1.27
L 0.45 0.66
L1 0.69 0.90
aaa 0.10 0.25

Figure1OutlinePG-TDSON-8FL,dimensionsinmm

Final Data Sheet 10 Rev.2.5,2022-08-09

 OptiMOSTMPower-Transistor,60V
BSC014N06NS

Figure2OutlineTape(TDSON-8FL)

Final Data Sheet 11 Rev.2.5,2022-08-09

 OptiMOSTMPower-Transistor,60V
BSC014N06NS

RevisionHistory
BSC014N06NS

Revision:2022-08-09,Rev.2.5
Previous Revision
Revision Date Subjects (major changes since last revision)
2.3 2014-10-16 Rev.2.3
2.4 2020-02-28 Update current rating
2.5 2022-08-09 Update outline drawing and footnotes

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Final Data Sheet 12 Rev.2.5,2022-08-09

Mouser Electronics

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