BSC014N04LSI

MOSFET
OptiMOSTMPower-MOSFET,40V TDSON-8FL(enlargedsourceinterconnection)
8
7
Features 6
5
•Optimizedforsynchronousrectification
•IntegratedmonolithicSchottky-likediode 1 5
2 6
•Verylowon-resistanceRDS(on) 3 7
•100%avalanchetested 4 8

•N-channel,logiclevel
4
•QualifiedaccordingtoJEDEC1)fortargetapplications 3
•Pb-freeleadplating;RoHScompliant 2
1
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilityduetoenlargedsourceinterconnection

S1 8D
Table1KeyPerformanceParameters
S2 7D
Parameter Value Unit
S3 6D
VDS 40 V
RDS(on),max 1.45 mΩ G4 5D

ID 195 A
QOSS 53 nC
QG(0V..10V) 55 nC

Type/OrderingCode Package Marking RelatedLinks

BSC014N04LSI TDSON-8 FL 014N04LI -

1)
J-STD20 and JESD22
Final Data Sheet 1 Rev.2.4,2020-05-15
 OptiMOSTMPower-MOSFET,40V
BSC014N04LSI

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Final Data Sheet 2 Rev.2.4,2020-05-15

 OptiMOSTMPower-MOSFET,40V
BSC014N04LSI

1Maximumratings
atTA=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 195 VGS=10V,TC=25°C
- - 123 VGS=10V,TC=100°C
Continuous drain current1) ID - - 166 A VGS=4.5V,TC=25°C
- - 105 VGS=4.5V,TC=100°C
- - 31 VGS=10V,TA=25°C,RthJA=50K/W2)
Pulsed drain current3) ID,pulse - - 780 A TC=25°C
Avalanche current, single pulse 4)
IAS - - 50 A TC=25°C
Avalanche energy, single pulse EAS - - 90 mJ ID=50A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
- - 96 TC=25°C
Power dissipation Ptot W
- - 2.5 TA=25°C,RthJA=50K/W2)
IEC climatic category;
Operating and storage temperature Tj,Tstg -55 - 150 °C
DIN IEC 68-1: 55/150/56

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case,
RthJC - 0.8 1.3 K/W -
bottom
Thermal resistance, junction - case,
RthJC - - 20 K/W -
top
Device on PCB,
RthJA - - 50 K/W -
6 cm2 cooling area2)

1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
Final Data Sheet 3 Rev.2.4,2020-05-15
 OptiMOSTMPower-MOSFET,40V
BSC014N04LSI

3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 40 - - V VGS=0V,ID=10mA
Breakdown voltage temperature
dV(BR)DSS/dTj - 30 - mV/K ID=10mA,referencedto25°C
coefficient
Gate threshold voltage VGS(th) 1.2 - 2 V VDS=VGS,ID=250µA
- - 0.5 VDS=32V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS mA
- 2 - VDS=32V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
- 1.5 2 VGS=4.5V,ID=50A
Drain-source on-state resistance RDS(on) mΩ
- 1.2 1.45 VGS=10V,ID=50A
Gate resistance1) RG 0.45 0.9 1.8 Ω -
Transconductance gfs 110 220 - S |VDS|>2|ID|RDS(on)max,ID=50A

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance1) Ciss - 4000 5600 pF VGS=0V,VDS=20V,f=1MHz
Output capacitance 1)
Coss - 1200 1680 pF VGS=0V,VDS=20V,f=1MHz
Reverse transfer capacitance 1)
Crss - 90 180 pF VGS=0V,VDS=20V,f=1MHz
VDD=20V,VGS=10V,ID=30A,
Turn-on delay time td(on) - 16 - ns
RG,ext,ext=1.6Ω
VDD=20V,VGS=10V,ID=30A,
Rise time tr - 50 - ns
RG,ext,ext=1.6Ω
VDD=20V,VGS=10V,ID=30A,
Turn-off delay time td(off) - 55 - ns
RG,ext,ext=1.6Ω
VDD=20V,VGS=10V,ID=30A,
Fall time tf - 11 - ns
RG,ext,ext=1.6Ω

1)
Defined by design. Not subject to production test
Final Data Sheet 4 Rev.2.4,2020-05-15
 OptiMOSTMPower-MOSFET,40V
BSC014N04LSI

Table6Gatechargecharacteristics1)
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 9.9 - nC VDD=20V,ID=50A,VGS=0to10V
Gate charge at threshold Qg(th) - 6.3 - nC VDD=20V,ID=50A,VGS=0to10V
Gate to drain charge2) Qgd - 8.9 12.5 nC VDD=20V,ID=50A,VGS=0to10V
Switching charge Qsw - 12 - nC VDD=20V,ID=50A,VGS=0to10V
Gate charge total 2)
Qg - 55 77 nC VDD=20V,ID=50A,VGS=0to10V
Gate plateau voltage Vplateau - 2.5 - V VDD=20V,ID=50A,VGS=0to10V
Gate charge total 2)
Qg - 29 41 nC VDD=20V,ID=50A,VGS=0to4.5V
Gate charge total, sync. FET Qg(sync) - 49 - nC VDS=0.1V,VGS=0to10V
Output charge 2)
Qoss - 53 74 nC VDD=20V,VGS=0V

Table7Reversediode
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode continuous forward current IS - - 96 A TC=25°C
Diode pulse current IS,pulse - - 780 A TC=25°C
Diode forward voltage VSD - 0.56 0.7 V VGS=0V,IF=12A,Tj=25°C
Reverse recovery charge Qrr - 20 - nC VR=20V,IF=12A,diF/dt=400A/µs

1)
See ″Gate charge waveforms″ for parameter definition
2)
Defined by design. Not subject to production test
Final Data Sheet 5 Rev.2.4,2020-05-15
 OptiMOSTMPower-MOSFET,40V
BSC014N04LSI

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Draincurrent
120 200

175
100

150

80
125
Ptot[W]

ID[A]
60 100

75
40

50

20
25

0 0
0 40 80 120 160 0 20 40 60 80 100 120 140 160
TC[°C] TC[°C]
Ptot=f(TC) ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 101

1 µs

10 µs
100 µs

102 100
0.5
1 ms
0.2
10 ms
ZthJC[K/W]

0.1
ID[A]

101 DC 10-1
0.05
0.02
0.01

single pulse
100 10-2

10-1 10-3
10-1 100 101 102 10-6 10-5 10-4 10-3 10-2 10-1 100
VDS[V] tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp ZthJC=f(tp);parameter:D=tp/T

Final Data Sheet 6 Rev.2.4,2020-05-15

 OptiMOSTMPower-MOSFET,40V
BSC014N04LSI

Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance
800 2.0

3.5 V
5V
700 10 V
4V
4.5 V
600 1.5 4.5 V
4V 5V
6V
500 8V
10 V

RDS(on)[mΩ]
3.5 V
ID[A]

400 1.0

300
3.2 V

200 3V 0.5

100 2.8 V

0 0.0
0 1 2 3 0 20 40 60 80 100
VDS[V] ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance
400 320

320
240

240
gfs[S]
ID[A]

160

160

25 °C 80
80 150 °C

0 0
0 1 2 3 4 5 0 20 40 60 80 100
VGS[V] ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj gfs=f(ID);Tj=25°C

Final Data Sheet 7 Rev.2.4,2020-05-15

 OptiMOSTMPower-MOSFET,40V
BSC014N04LSI

Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage
3.0 2.5

2.5
2.0

2.0
max 1.5
RDS(on)[mΩ]

VGS(th)[V]
1.5

typ 1.0

1.0

0.5
0.5

0.0 0.0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
Tj[°C] Tj[°C]
RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS;IDS=10mA

Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode
4
10 103
-55 °C
Ciss 25 °C
125 °C
150 °C

Coss 102

103
C[pF]

IF[A]

101

Crss
102

100

101 10-1
0 10 20 30 40 0.0 0.4 0.8 1.2
VDS[V] VSD[V]
C=f(VDS);VGS=0V;f=1MHz IF=f(VSD);parameter:Tj

Final Data Sheet 8 Rev.2.4,2020-05-15

 OptiMOSTMPower-MOSFET,40V
BSC014N04LSI

Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge
2
10 12

20 V
10
8V

25 °C 32 V
8

100 °C

VGS[V]
IAV[A]

101 6
125 °C

100 0
100 101 102 103 0 20 40 60
tAV[µs] Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD

Diagram15:Typ.drain-sourceleakagecurrent Diagram Gate charge waveforms

-2
10

125 °C
10-3
100 °C

75 °C
IDSS[A]

10-4

10-5 25 °C

10-6
0 5 10 15 20 25 30 35
VSD[V]
IDSS=f(VDS);VGS=0V;parameter:Tj

Final Data Sheet 9 Rev.2.4,2020-05-15

 OptiMOSTMPower-MOSFET,40V
BSC014N04LSI

5PackageOutlines

DOCUMENT NO.
Z8B000193699
REVISION
03
MILLIMETERS
DIMENSION
MIN. MAX. SCALE 10:1
A 0.90 1.20
A1 0.15 0.35 0 1 2 3mm
b 0.26 0.54
D 4.80 5.35
D1 3.70 4.40
EUROPEAN PROJECTION
D2 0.02 0.23
E 5.70 6.10
E1 5.90 6.42
E2 3.88 4.42
e 1.27
L 0.69 0.90 ISSUE DATE
M 0.45 0.69 19.06.2019

Figure1OutlineTDSON-8FL,dimensionsinmm

Final Data Sheet 10 Rev.2.4,2020-05-15

 OptiMOSTMPower-MOSFET,40V
BSC014N04LSI

PG-TDSON-8­FL: RecommenGHd BoDrdpads & Apertures

Figure 2 Outline Boardpads (TDSON-8 FL)

Final Data Sheet 11 Rev.2.4,2020-05-15

 OptiMOS TM Power-MOSFET , 40 V
BSC014N04LSI

Figure 3 Outline Tape (TDSON-8 FL )

Final Data Sheet 12 Rev. 2.4, 2020-05-15

 OptiMOS TM Power-MOSFET , 40 V
BSC014N04LSI

Revision History
BSC014N04LSI

Revision: 2020-05-15, Rev. 2.4

Previous Revision
Revision Date Subjects (major changes since last revision)
2.2 2016-05-04 Update footnotes and insert max values
2.3 2019-10-01 Update package drawings
2.4 2020-05-15 Update current rating

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Final Data Sheet 13 Rev. 2.4, 2020-05-15

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