IQDH88N06LM5CG

MOSFET
OptiMOSTM5Power-Transistor,60V PG-TTFN-9

5
Features 6
7
8
•N-channel,logiclevel
•Verylowon-resistanceRDS(on)
•Superiorthermalresistance 9

•100%avalanchetested 4
•Pb-freeleadplating;RoHScompliant 3
2
•Halogen-freeaccordingtoIEC61249-2-21 1

Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Drain
Pin 5-8
Table1KeyPerformanceParameters
Parameter Value Unit Gate
Pin 9
VDS 60 V
Source
RDS(on),max 0.86 mΩ Pin 1-4

ID 447 A
Qoss 133 nC
QG 76 nC

Type/OrderingCode Package Marking RelatedLinks

IQDH88N06LM5CG PG-TTFN-9 H8806LC -

Final Data Sheet 1 Rev.2.1,2023-03-30

 OptiMOSTM5Power-Transistor,60V
IQDH88N06LM5CG

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Final Data Sheet 2 Rev.2.1,2023-03-30

 OptiMOSTM5Power-Transistor,60V
IQDH88N06LM5CG

1Maximumratings
atTA=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 447 VGS=10V,TC=25°C
- - 316 VGS=10V,TC=100°C
Continuous drain current 1)
ID A
- - 263 VGS=4.5V,TC=100°C
- - 42 VGS=10V,TA=25°C,RthJA=50°C/W2)
Pulsed drain current3) ID,pulse - - 1788 A TC=25°C
Avalanche energy, single pulse 4)
EAS - - 1115 mJ ID=50A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
- - 333 TC=25°C
Power dissipation Ptot W
- - 3.0 TA=25°C,RthJA=50°C/W2)
Operating and storage temperature Tj,Tstg -55 - 175 °C -

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 0.45 °C/W -
Thermal resistance, junction - ambient,
RthJA - - 50 °C/W -
6 cm² cooling area2)

1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
Final Data Sheet 3 Rev.2.1,2023-03-30
 OptiMOSTM5Power-Transistor,60V
IQDH88N06LM5CG

3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 60 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 1.1 1.7 2.3 V VDS=VGS,ID=163µA
- 0.1 1 VDS=60V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 100 VDS=60V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
- 0.7 0.86 VGS=10V,ID=50A
Drain-source on-state resistance RDS(on) mΩ
- 1.0 1.24 VGS=4.5V,ID=25A
Gate resistance RG - 0.55 - Ω -
Transconductance gfs 115 230 - S |VDS|≥2|ID|RDS(on)max,ID=50A

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance1) Ciss - 11000 14000 pF VGS=0V,VDS=30V,f=1MHz
Output capacitance1) Coss - 2000 2600 pF VGS=0V,VDS=30V,f=1MHz
Reverse transfer capacitance 1)
Crss - 95 170 pF VGS=0V,VDS=30V,f=1MHz
VDD=30V,VGS=10V,ID=50A,
Turn-on delay time td(on) - 14 - ns
RG,ext=1.6Ω
VDD=30V,VGS=10V,ID=50A,
Rise time tr - 8 - ns
RG,ext=1.6Ω
VDD=30V,VGS=10V,ID=50A,
Turn-off delay time td(off) - 53 - ns
RG,ext=1.6Ω
VDD=30V,VGS=10V,ID=50A,
Fall time tf - 16 - ns
RG,ext=1.6Ω

Table6Gatechargecharacteristics2)
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 27 - nC VDD=30V,ID=50A,VGS=0to4.5V
Gate charge at threshold Qg(th) - 18 - nC VDD=30V,ID=50A,VGS=0to4.5V
Gate to drain charge 1)
Qgd - 22 33 nC VDD=30V,ID=50A,VGS=0to4.5V
Switching charge Qsw - 31 - nC VDD=30V,ID=50A,VGS=0to4.5V
Gate charge total 1)
Qg - 76 95 nC VDD=30V,ID=50A,VGS=0to4.5V
Gate plateau voltage Vplateau - 2.5 - V VDD=30V,ID=50A,VGS=0to4.5V
Gate charge total Qg - 152 - nC VDD=30V,ID=50A,VGS=0to10V
Gate charge total, sync. FET Qg(sync) - 62 - nC VDS=0.1V,VGS=0to4.5V
Output charge 1)
Qoss - 133 177 nC VDS=30V,VGS=0V

1)
Defined by design. Not subject to production test.
2)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet 4 Rev.2.1,2023-03-30
 OptiMOSTM5Power-Transistor,60V
IQDH88N06LM5CG

Table7Reversediode
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode continuous forward current IS - - 271 A TC=25°C
Diode pulse current IS,pulse - - 1788 A TC=25°C
Diode forward voltage VSD - 0.77 1.0 V VGS=0V,IF=50A,Tj=25°C
Reverse recovery time 1)
trr - 44 88 ns VR=30V,IF=25A,diF/dt=100A/µs
Reverse recovery charge 1)
Qrr - 49 98 nC VR=30V,IF=25A,diF/dt=100A/µs

1)
Defined by design. Not subject to production test.
Final Data Sheet 5 Rev.2.1,2023-03-30
 OptiMOSTM5Power-Transistor,60V
IQDH88N06LM5CG

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Draincurrent
350 500

300
400

250

300
200
Ptot[W]

ID[A]
150
200

100

100
50

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TC[°C] TC[°C]
Ptot=f(TC) ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
4
10 101
single pulse
0.01
1 µs 0.02
0.05
10 3 0.1
10 µs 0.2
100 0.5

102 100 µs
ZthJC[K/W]
ID[A]

DC 10-1
1 ms

101

10 ms
10-2
0
10

10-1 10-3
10-1 100 101 102 10-6 10-5 10-4 10-3 10-2 10-1 100
VDS[V] tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp ZthJC=f(tp);parameter:D=tp/T

Final Data Sheet 6 Rev.2.1,2023-03-30

 OptiMOSTM5Power-Transistor,60V
IQDH88N06LM5CG

Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance
2000 2.4

10 V 5V
1750
2.0
3V
4V
1500 3.5 V

4.5 V 1.6
1250

RDS(on)[mΩ]
ID[A]

1000 4V 1.2 4.5 V

750
5V
0.8
3.5 V
500 10 V

0.4
3V
250

2.8 V
0 0.0
0 1 2 3 4 5 0 200 400 600 800 1000
VDS[V] ID[A]
ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance
2000 2.4

1750
2.0

1500
25 °C
1.6
1250
RDS(on)[mΩ]
ID[A]

1000 1.2 175 °C

750 100 °C
175 °C
0.8

500 25 °C

0.4 -55 °C
250

0 0.0
0 1 2 3 4 5 0 2 4 6 8 10 12 14 16
VGS[V] VGS[V]
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj RDS(on)=f(VGS),ID=50A;parameter:Tj

Final Data Sheet 7 Rev.2.1,2023-03-30

 OptiMOSTM5Power-Transistor,60V
IQDH88N06LM5CG

Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage
2.0 2.4

2.0
1.6
RDS(on)(normalizedto25°C)

1.6 1630 µA

1.2

VGS(th)[V]
1.2

0.8 163 µA

0.8

0.4
0.4

0.0 0.0
-75 -50 -25 0 25 50 75 100 125 150 175 200 -75 -50 -25 0 25 50 75 100 125 150 175 200
Tj[°C] Tj[°C]
RDS(on)=f(Tj),ID=50A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID

Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode
5
10 104
25 °C
25 °C, max
175 °C
175 °C, max

104
Ciss
103
C[pF]

IF[A]

103
Coss

102

102

Crss

101 101
0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5
VDS[V] VSD[V]
C=f(VDS);VGS=0V;f=1MHz IF=f(VSD);parameter:Tj

Final Data Sheet 8 Rev.2.1,2023-03-30

 OptiMOSTM5Power-Transistor,60V
IQDH88N06LM5CG

Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge
2
10 10
12 V
30 V
48 V

8
25 °C

100 °C
150 °C
6

VGS[V]
IAV[A]

101

100 0
100 101 102 103 0 20 40 60 80 100 120 140 160
tAV[µs] Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=50Apulsed,Tj=25°C;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms

65

64

63

62
VBR(DSS)[V]

61

60

59

58

57
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA

Final Data Sheet 9 Rev.2.1,2023-03-30

 OptiMOSTM5Power-Transistor,60V
IQDH88N06LM5CG

5PackageOutlines

PACKAGE - GROUP
NUMBER: PG-TTFN-9-U02
MILLIMETERS
DIMENSIONS
MIN. MAX.
A - 1.10
A1 - 0.05
b 0.32 0.52
b1 0.32 0.52
c 0.20
D 5.00
D1 4.13 4.33
D2 2.93 3.13
D3 0.75 0.95
E 6.00
E1 3.275 3.475
E2 3.19 3.39
e 1.27
L 0.435 0.635
L1 0.50 0.70
L2 0.30 0.50
L3 2.76 2.96
L4 0.75
L5 0.615 0.635

Figure1OutlinePG-TTFN-9,dimensionsinmm

Final Data Sheet 10 Rev.2.1,2023-03-30

 OptiMOSTM5Power-Transistor,60V
IQDH88N06LM5CG

RevisionHistory
IQDH88N06LM5CG

Revision:2023-03-30,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2023-03-08 Release of final version
2.1 2023-03-30 Update RG, ext for switching times

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Final Data Sheet 11 Rev.2.1,2023-03-30

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