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STGIPS10K60A Datasheet (PD

F) - STMicroelectronics
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STGIPS10K60A Internal block diagram and pin configuration

1 Internal block diagram and pin configuration

Figure 1. Internal block diagram

Pin
in 1
Pin
in 25
OUTU
V b oot
oot U

T1
L INU LI N Vb
booot
ot R 1 D1
HINU H IN H VG
VCC

V CC OU T

C 1 U
LV G T2
GND
R 2
D2

NU
OUTV
V b oot
oot V

P
T3
LI N Vb
booot
ot R 3 D3
GN D H IN H VG

VCC
L INV OU T

C 2 V
HINV
LV G
GND
R 4
T4
D4

OUTW NV
V b ooot
ot W

P
T5
LI N Vb
b oot
oot R 5

D5
H IN H VG

V CC
L INW OU T

C 3 W
HINW
LV G
GND
R 6
T6
T1 D6
T2
1 2

NW
Pin
in 16 Pin 17
N TC

Doc ID 15587 Rev 5 3/17

Internal block diagram and pin configuration STGIPS10K60A

Table 2. Pin description

Pin Symbol Description

1OUT
U High side reference output for U phase
2V
boot U Bootstrap voltage for U phase
3LIN
U Low side logic input for U phase
4HIN
U High side logic input for U phase
5V
CC Low voltage power supply
6OUT
V High side reference output for V phase
7V
boot V Bootstrap voltage for V phase
8 GND Ground
9LIN
V Low side logic input for V phase
10 HINV High side logic input for V phase
11 OUTW High side reference output for W phase
12 Vboot W Bootstrap voltage for W phase
13 LINW Low side logic input for W phase
14 HINW High side logic input for W phase
15 T1 NTC thermistor terminal 1
16 T2 NTC thermistor terminal 2
17 NW Negative DC input for W phase
18 W W phase output
19 P Positive DC input
20 NV Negative DC input for V phase
21 V V phase output
22 P Positive DC input
23 NU Negative DC input for U phase
24 U U phase output
25 P Positive DC input

Figure 2. Pin layout (bottom view)

4/17 Doc ID 15587 Rev 5

STGIPS10K60A Electrical ratings

2 Electrical ratings

2.1 Absolute maximum ratings

Table 3. Inverter part

Symbol Parameter Value Unit

VPN Supply voltage applied between P - NU , NV, NW 450 V

VPN(surge) Supply voltage (surge) applied between P - NU , 500 V

NV, NW
(1)
VCES Collector emitter voltage (VIN = 0) 600 V

(2) Each IGBT continuous collector current at

± IC 10 A
TC = 25°C
(3)
± ICP Each IGBT pulsed collector current 20 A

PTOT Each IGBT total dissipation at TC = 25°C 26 W

Short-circuit withstand time, VCE = 0.5 V(BR)CES

tscw (1) 5μs
Tj = 125 °C, VCC = Vboot= 15 V, VIN = 5 V
1. Applied between HINi , LINi and GND for i = U, V, W.
2. Calculated according to the iterative formula:
–
T jmax TC
= ----------------------------------------------------------------------------------------------------------
()
I C ()
TC
R thj – c × VCE () sat () max T jmax
()() , I C () TC

3. Pulse width limited by max junction temperature.

Table 4. Control part

Symbol Parameter Value Unit

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